CN204102401U - A kind of for simulating the experimental provision recalling resistance element - Google Patents
A kind of for simulating the experimental provision recalling resistance element Download PDFInfo
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- CN204102401U CN204102401U CN201420414243.5U CN201420414243U CN204102401U CN 204102401 U CN204102401 U CN 204102401U CN 201420414243 U CN201420414243 U CN 201420414243U CN 204102401 U CN204102401 U CN 204102401U
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Abstract
A kind of for simulating the experimental provision recalling resistance element, it comprises integrating circuit, V/I translation circuit, non-linear resistance and feedback circuit, described V/I translation circuit comprises two operational amplifiers and five resistance, the in-phase input end of the first operational amplifier connects the output terminal of integrating circuit through the first resistance, inverting input is through the second resistance eutral grounding and connect its output terminal through the 3rd resistance, output terminal is successively through the 4th resistance and non-linear resistance ground connection, second operational amplifier is connected into voltage follower, its input end is connected to the 4th between resistance and non-linear resistance, output terminal connects the in-phase input end of the first operational amplifier through the 5th resistance.The utility model recalls the volt-ampere characteristic of resistance element under utilizing the circuit be made up of circuit common components and parts successfully to simulate nanoscale, solve the difficult problem that the experimental teaching recalling resistance element is at present difficult to carry out well, recall resistance circuit for study and research and provide utility.
Description
Technical field
The utility model relate to a kind of use in education experiment for simulating the experimental provision recalling resistance element, belong to experimental apparatus technical field.
Background technology
Memristor is a kind of non-linear resistance with memory function, is the 4th kind of passive basic circuit elements after relay resistance, electric capacity, inductance.As the appearance of the memristor of primary element, the change of the structural system of electronic circuit, principle, design theory will be caused, and the development of the application promoting electron trade new.Memristor (Memristor) is a kind of non-linear resistance defined by electric charge q and magnetic flux φ.After within 2008, HP Lab achieves the device with memristor performance on nanoscale, in succession propose the various physical model or device that realize memristor performance.Memristor is in bio-science, and artificial neural network, multiple field such as microelectronics presents its potential application prospect.
Although recall resistance element successfully to be have developed by HP Lab and recall resistance element under nanoscale, but because its yardstick is too small, cause and be difficult to carry out for the experiment recalling resistance element, the study recalling resistance element can only rest on conceptive, causes great difficulty to the teaching recalling resistance element.
Utility model content
The purpose of this utility model is the drawback for prior art, providing a kind of for simulating the experimental provision recalling resistance element, providing convenience for colleges and universities carry out the experimental teaching recalling resistance element.
Problem described in the utility model realizes with following technical proposals:
A kind of for simulating the experimental provision recalling resistance element, formation comprises integrating circuit, V/I translation circuit, non-linear resistance and feedback circuit, described V/I translation circuit comprises two operational amplifiers and five resistance, the in-phase input end of the first operational amplifier connects the output terminal of integrating circuit through the first resistance, inverting input is through the second resistance eutral grounding and connect its output terminal through the 3rd resistance, output terminal is successively through the 4th resistance and non-linear resistance ground connection, second operational amplifier is connected into voltage follower, its input end is connected to the 4th between resistance and non-linear resistance, output terminal connects the in-phase input end of the first operational amplifier through the 5th resistance.
Above-mentioned for simulating the experimental provision recalling resistance element, described feedback circuit comprises differential capacitance, two operational amplifiers and three resistance, the in-phase input end of the 3rd operational amplifier is through the 6th resistance eutral grounding, inverting input connects its output terminal through the 7th resistance and is connected to the 4th between resistance and non-linear resistance through the 8th resistance, four-operational amplifier adopts AD844, its in-phase input end connects the output terminal of the 3rd operational amplifier, inverting input through differential capacitance ground connection, the input end of TZ termination integrating circuit.
Above-mentioned for simulating the experimental provision recalling resistance element, described integrating circuit comprises the 5th operational amplifier, integrating capacitor and the 9th resistance, 5th operational amplifier adopts AD844, its in-phase input end is the input end of integrating circuit, inverting input is through the 9th resistance eutral grounding, and TZ end is through integrating capacitor ground connection.
Above-mentioned for simulating the experimental provision recalling resistance element, described non-linear resistance is formed by connecting by diode and two resistance, is connected after the tenth resistance is connected with Diode series with the 11 resistor coupled in parallel again.
The utility model recalls the volt-ampere characteristic of resistance element under utilizing the circuit be made up of the circuit common such as operational amplifier, resistance components and parts successfully to simulate nanoscale, solve the difficult problem that the experimental teaching recalling resistance element is at present difficult to carry out well, recall resistance circuit for study and research and provide utility.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Fig. 1 is the structure of linear two-port network;
The circuit diagram of the two-port network that Fig. 2 is made up of two controlled sources;
Fig. 3 is electrical schematic diagram of the present utility model;
Fig. 4 is simulation result of the present utility model.
In figure, each list of reference numerals is: F1 ~ F5, the first operational amplifier ~ the 5th operational amplifier, D, diode, C1, differential capacitance, C2, integrating capacitor, R1 ~ R11, the first resistance ~ the 11 resistance.
Embodiment
Definition according to recalling resistance element:
, the total thinking realizing recalling resistance element device is: by building the two-port network that delivery outlet voltage-current relationship is converted to input port electric charge magnetic linkage relation by, being converted to by non-linear resistance and recalling resistance.
The principle of the utility model foundation is, is provided with a linear two-port network (as Fig. 1), its transformation parameter equation as the formula (1):
（1）
The circuit diagram (as Fig. 2) that can be made up of two controlled sources formula (1), as seen from Figure 2, connects a VCCS(Voltage-controlled Current Source at right-hand end), its current value
determined by formula (2):
（2）
From voltage and magnetic linkage relation:
（3）
Then can obtain:
（4）
In like manner, left side connects a VCCS, its electric current
determined by formula (5):
（5）
（6）
From electric current and charge relationship:
（7）
Then can obtain:
（8）
Namely after two-port network right-hand member access non-linear resistance, namely port identity has memristor characteristic on the left of it.Thus recall resistance element experimental provision under obtaining regular measure.
During specific implementation, utilize AD844 amplifier and AD826 amplifier and the circuit component such as resistance, electric capacity, a non-linear resistance is transformed into the circuit that is recalled resistance element, as shown in Figure 3.
Table 1
In Fig. 3, component parameters is as shown in table 1, the output termination of circuit non-linear resistance (being made up of diode D, the tenth resistance R10 and the 11 resistance R11), input termination power, then namely the relation of the voltage and current of this input port embodies the characteristic recalling resistance element.A diode and two resistance are utilized to build a non-linear resistance, if the voltage of non-linear resistance is
, electric current is
if the voltage and current of input end is respectively
with
, then input voltage
through by the 5th operational amplifier F5(operating amplifier with current feedback AD844) after the integrating circuit that forms, voltage signal
become voltage signal
, as the formula (9).Again by the first operational amplifier F1(AD826) and the second operational amplifier F2(AD826) the V/I translation circuit that forms, by voltage signal
change current signal into
, as the formula (10).So far, the relation of input terminal voltage signal and output end current signal is differential relationship.
（9）
（10）
Non-linear resistance side output voltage
by the 3rd operational amplifier F3(AD826) phase inverter that forms, by voltage
anti-phase obtain voltage-
, then pass through by four-operational amplifier F4(operating amplifier with current feedback AD844) differentiating circuit that forms, by voltage signal
current signal is obtained after differential
, from operational amplifier resolution
, the current signal so far inputted
with output voltage signal
relation be differential relationship as the formula (11).
（11）
By above analysis, known input voltage and electric current and meet between output voltage and electric current:
，
Thus a non-linear resistance is transformed to the function that is recalled resistance element by change class device circuit realiration shown in Fig. 3, and simulation result is as Fig. 4.
As can be seen from simulation result, the relation of circuit input end voltage and current has embodied the characteristic recalling resistance element, namely meets 8-shaped relation.
Claims (4)
1. one kind for simulating the experimental provision recalling resistance element, it is characterized in that, it comprises integrating circuit, V/I translation circuit, non-linear resistance and feedback circuit, described V/I translation circuit comprises two operational amplifiers and five resistance, the in-phase input end of the first operational amplifier (F1) connects the output terminal of integrating circuit through the first resistance (R1), inverting input is through the second resistance (R2) ground connection and connect its output terminal through the 3rd resistance (R3), output terminal is successively through the 4th resistance (R4) and non-linear resistance ground connection, second operational amplifier (F2) is connected into voltage follower, its input end is connected between the 4th resistance (R4) and non-linear resistance, output terminal connects the in-phase input end of the first operational amplifier (F1) through the 5th resistance (R5).
2. according to claim 1 for simulating the experimental provision recalling resistance element, it is characterized in that, described feedback circuit comprises differential capacitance (C1), two operational amplifiers and three resistance, the in-phase input end of the 3rd operational amplifier (F3) is through the 6th resistance (R6) ground connection, inverting input connects its output terminal through the 7th resistance (R7) and is connected between the 4th resistance (R4) and non-linear resistance through the 8th resistance (R8), four-operational amplifier (F4) adopts AD844, its in-phase input end connects the output terminal of the 3rd operational amplifier (F3), inverting input is through differential capacitance (C1) ground connection, the input end of TZ termination integrating circuit.
3. according to claim 1 and 2 for simulating the experimental provision recalling resistance element, it is characterized in that, described integrating circuit comprises the 5th operational amplifier (F5), integrating capacitor (C2) and the 9th resistance (R9), 5th operational amplifier (F5) adopts AD844, its in-phase input end is the input end of integrating circuit, inverting input is through the 9th resistance (R9) ground connection, and TZ end is through integrating capacitor (C2) ground connection.
4. according to claim 3 for simulating the experimental provision recalling resistance element, it is characterized in that, described non-linear resistance is formed by connecting by diode (D) and two resistance, is connected in parallel after the tenth resistance (R10) and diode (D) are connected in series with the 11 resistance (R11) again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420414243.5U CN204102401U (en) | 2014-07-25 | 2014-07-25 | A kind of for simulating the experimental provision recalling resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420414243.5U CN204102401U (en) | 2014-07-25 | 2014-07-25 | A kind of for simulating the experimental provision recalling resistance element |
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| Publication Number | Publication Date |
|---|---|
| CN204102401U true CN204102401U (en) | 2015-01-14 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134383A (en) * | 2014-07-25 | 2014-11-05 | 华北电力大学（保定） | Experimental device for simulating memory resistor element |
| CN104134383B (en) * | 2014-07-25 | 2017-01-04 | 华北电力大学（保定） | A kind of experimental provision for simulating memristor element |
| CN109584929A (en) * | 2017-09-29 | 2019-04-05 | 西华大学 | A kind of magnetic control memristor circuit |
| US11475272B2 (en) * | 2017-03-24 | 2022-10-18 | Denso Corporation | Neural network circuit |
-
2014
- 2014-07-25 CN CN201420414243.5U patent/CN204102401U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134383A (en) * | 2014-07-25 | 2014-11-05 | 华北电力大学（保定） | Experimental device for simulating memory resistor element |
| CN104134383B (en) * | 2014-07-25 | 2017-01-04 | 华北电力大学（保定） | A kind of experimental provision for simulating memristor element |
| US11475272B2 (en) * | 2017-03-24 | 2022-10-18 | Denso Corporation | Neural network circuit |
| CN109584929A (en) * | 2017-09-29 | 2019-04-05 | 西华大学 | A kind of magnetic control memristor circuit |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |