CN205265656U - Superficially voltage -controlled recall hinder ware emulation ware circuit - Google Patents

Superficially voltage -controlled recall hinder ware emulation ware circuit Download PDF

Info

Publication number
CN205265656U
CN205265656U CN201521049866.8U CN201521049866U CN205265656U CN 205265656 U CN205265656 U CN 205265656U CN 201521049866 U CN201521049866 U CN 201521049866U CN 205265656 U CN205265656 U CN 205265656U
Authority
CN
China
Prior art keywords
pin
resistance
operational amplifier
integrated operational
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn - After Issue
Application number
CN201521049866.8U
Other languages
Chinese (zh)
Inventor
王光义
许碧荣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Dianzi University
Original Assignee
Hangzhou Dianzi University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Dianzi University filed Critical Hangzhou Dianzi University
Priority to CN201521049866.8U priority Critical patent/CN205265656U/en
Application granted granted Critical
Publication of CN205265656U publication Critical patent/CN205265656U/en
Withdrawn - After Issue legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Amplifiers (AREA)

Abstract

The utility model discloses a superficially voltage -controlled recall hinder ware emulation ware circuit, including integrated operational amplifier U1, multiplier U2 and U3 and a small amount of resistance, electric capacity, the ohmic connection input, resistance and integrated operational amplifier U1 link to each other, utilize that integrated operational amplifier U1 is used for realizing that the difference is enlargied, opposition addition, integral and opposition enlarge, integrated operational amplifier U1 links to each other with multiplier U2, U3, and multiplier U2 links to each other with U3, and multiplier U2, U3 are used for realizing multiplying each other of signal. The utility model discloses utilize analog circuit realized voltage -controlled recall hinder ware voltage -current characteristic.

Description

A kind of voltage-controlled memristor emulator circuit floatingly
Technical field
The utility model belongs to circuit design technique field, relates to a kind of memristor emulator circuit, specifically relates toAnd a kind of design and realization of voltage-controlled memristor emulator circuit floatingly.
Background technology
Memristor is the 4th kind of component mutually arranged side by side with resistance, electric capacity, inductance in circuit, is Cai ShaotangProposed in 1971, within 2008, memristor has been realized in HP Lab. Memristor have non-volatile andNonlinear character, can be applicable to non-loss memory, artificial neural network and circuit design. But,Because existing memristor adopts nanometer technology, exist and realize difficulty and the high defect of cost, memristor is currentAlso do not move towards market as an actual element. Thereby, design a kind of memristor equivalent circuit and replace with itCarry out experiment and application research for actual memristor significant. Even memristor commercialization in the future, alsoBe to exist with the form of large scale integrated circuit, difficulty has the element of single nanoscale memristor to exist, because ofThis, utilizing memristor equivalent circuit to replace actual memristor to carry out application circuit design will have long-range meaningWith value.
At present, though report the existence of a small amount of memristor equivalent circuit, mainly concentrating on magnetic control recalls, not yet there is the equivalent circuit of voltage-controlled memristor, and utilize voltage-controlled in the equivalent circuit of resistance device and lotus control memristorThe circuit of memristor design is simpler than the circuit that contains magnetic control memristor or lotus control memristor, and floats recalling of groundResistance device uses more convenient than the memristor of one end ground connection. Therefore, a kind of voltage-controlled memristor equivalence floatingly of designCircuit is significant.
Summary of the invention
For prior art above shortcomings, the utility model provides a kind of voltage-controlled memristor floatingly imitativeTrue device circuit, in order to simulate the C-V characteristic of voltage-controlled memristor, substitute actual voltage-controlled memristor test withApplication and research.
The technical scheme that the utility model technical solution problem is taked is as follows: the utility model comprises integrated fortuneCalculate amplifier U1, multiplier U2 and multiplier U3.
Resistance R 1 one end connects input (A), is connected with one end of resistance R 2 simultaneously, and other end ground connection,The other end of R2 is connected on integrated operational amplifier U1 pin 3, is connected resistance simultaneously with one end of resistance R 3The other end ground connection of R3; Resistance R 4 one end connect inputs (B), one end phase of the other end and resistance R 5Connect, be connected on integrated operational amplifier U1 pin 2 simultaneously, the other end of resistance R 5 is connected on integrated computation and amplifiesDevice U1 pin 1.
Integrated operational amplifier U1 adopts LF347N; The pin 1 of described integrated operational amplifier U1 passes throughResistance R 5 is joined with pin 2, and pin 2 connects input (B) by R4, and pin 3 connects by R2Described input (A), by R3 ground connection, pin 4 meets power supply VCC, and pin 11 connects power supplyVEE; The pin 1 of integrated operational amplifier U1 is connected with pin 6 by resistance R 8, pin 5 ground connection,Pin 6 connects pin 7 by resistance R 9; Pin 7 joins by resistance R 10 and pin 9; Pin 8 is logicalParallel network and the pin 9 of crossing capacitor C 1 and resistance R 11 join, pin 10 ground connection; Pin 13 passes throughResistance R 12 connects pin 8, pin 12 ground connection; Pin 14 joins by resistance R 13 and pin 13, logicalCrossing resistance R 6 joins with pin 6.
Multiplier U2 adopts AD633JN; The X1 pin of described multiplier U2 meets integrated operational amplifier U1Pin 1, Y1 pin is connected with the pin 8 of integrated operational amplifier U1, X2 pin and Y2 pin connectGround, VS+ pin meets power supply VCC, and VS-pin meets power supply VEE, and Z pin is by resistance R 14 and WPin is connected, and by resistance R 15 ground connection, W pin is connected with the pin 6 of U1 by resistance R 7.
Multiplier U3 adopts AD633JN; The X1 pin of multiplier U3 connects the W pin of multiplier U2,Y1 pin is connected with the pin 8 of integrated operational amplifier U1, X2 pin and Y2 pin ground connection, and VS+ drawsPin meets power supply VCC, and VS-pin meets power supply VEE, and Z pin is connected with W pin by resistance R 16,By resistance R 17 ground connection, W pin is connected with the pin 2 of U1 by resistance R 4.
The utility model has designed a kind ofly can realize the analog equivalent electricity of voltage-controlled memristor C-V characteristic floatinglyRoad, this analog circuit contains 1 integrated transporting discharging and 2 multipliers and a small amount of resistance, electric capacity, at present andCannot obtain in the situation of single isolated voltage-controlled memristor device in the future, can be used for voltage-controlled memristor relevantCircuit design, experiment and application, have great importance to the characteristic and application research of voltage-controlled memristor.
The analog circuit of realizing memristor of the utility model design, it utilizes analog circuit to realize the voltage-controlled resistance of recallingDevice C-V characteristic, specific implementation voltage-controlled memristor C-V characteristic. The utility model utilizes integrated computation circuitRealize the corresponding computing in memristor characteristic with analog multiplier, wherein, integrated operational amplifier mainly in order toRealize the differential amplification of voltage, anti-phase addition, the integral operation of voltage and the anti-phase amplification of voltage of voltage,Analog multiplier is in order to realize the product between voltage and voltage.
Brief description of the drawings
Fig. 1 is circuit structure block diagram of the present utility model.
Fig. 2 is the utility model memristor equivalent simulation circuit theory diagrams.
Detailed description of the invention
Below in conjunction with accompanying drawing, the utility model preferred embodiment is elaborated.
Theoretical starting point of the present utility model is the general expression of voltage-controlled memristor C-V characteristic:
i=G(z,u)u(t),
d z d t = f ( z , u ) .
Wherein, variable z represents the state of memristor.
As shown in Figure 1, the voltage-controlled memristor simulating equivalent circuit of the present embodiment comprises integrated operational amplifierU1, multiplier U2, U3 and a small amount of resistance, electric capacity, integrated operational amplifier U1 mainly realizes difference to be putAnti-phase addition, integral operation and anti-phase amplification greatly; Multiplier U2, U3 realize multiplying each other of two signals;U1 adopts LF347N, and U2 and U3 adopt AD633JN.
As shown in Figure 2, in the present embodiment, resistance R 1 connects input A and is connected to one end of resistance R 1, resistanceThis end of R1 also joins with one end of resistance R 2, the other end ground connection of resistance R 1, another of resistance R 2End joins with the 3rd pin of integrated operational amplifier U1, joins with the in-phase end of difference amplifier, alsoJoin with one end of resistance R 3, the other end ground connection of resistance R 3. If the input current of circuit is i:
i = u A ( 1 R 1 + 1 R 2 + R 3 )
Wherein, uAFor input A voltage over the ground. Due to R2+R3>>R1, the input current of circuit is approximately:
i = R 5 R 4 · u A R 1
In integrated operational amplifier U1, have 4 operational amplifiers, wherein, the 1st, 2,3 pins are correspondingOperational amplifier, forms difference amplifier with peripheral resistance R 2, R3, R4, R5, in order to realize both-end electricityPress u to transfer single-ended voltage over the ground to, the voltage of U1 pin 1 is:
u 1 = R 5 R 4 ( u A - u B )
Wherein, uBFor input B voltage over the ground, due to R4=R5, the voltage of U1 pin 1 is
u1=uA-uB
Operational amplifier corresponding to the 5th, 6,7 pin of integrated operational amplifier U1, with peripheral resistanceR6, R7, R8, R9 form anti-phase adder, and the voltage of U1 pin 7 is:
u 7 = - ( R 9 R 6 u 14 + R 9 R 7 u 2 w + R 9 R 8 u 1 )
Wherein, u2wFor the W pin voltage of multiplier U2, u14For the electricity of integrated operational amplifier U1 pin 14Press.
The the 8th, 9,10 pins of integrated operational amplifier U1 and peripheral capacitor C 1, resistance R 10, R11Form integrator, in order to realize the integration of input voltage, i.e. the voltage of U1 pin 8:
u 8 = - 1 R 10 C 1 ∫ u 7 d t = 1 R 10 C 1 ∫ ( R 9 R 6 u 14 + R 9 R 7 u 2 w + R 9 R 8 u 1 ) d t
Operational amplifier corresponding to the 12nd, 13,14 pin of integrated operational amplifier U1, with peripheral resistanceR12, R13 form inverting amplifier, and the voltage of U1 pin 14 is:
u 14 = - R 13 R 12 u 8 = - R 13 R 12 R 10 C ∫ ( R 9 R 6 u 14 + R 9 R 7 u 2 w + R 9 R 8 u 1 ) d t
If above formula is represented by differential form, be
du 14 d t = - R 13 R 12 R 10 C ( R 9 R 6 u 14 + R 9 R 7 u 2 w + R 9 R 8 u 1 )
u14For representing the state of memristor.
Multiplier U2 is in order to realize input voltage u1Voltage u with U1 pin 88Product calculation, i.e. U2The voltage of output W pin:
u 2 w = R 14 + R 15 10 R 14 u 1 u 8 = - R 12 ( R 14 + R 15 ) 10 R 13 R 14 u 1 u 14
Multiplier U3 is in order to realize the voltage u of U2 output W pin2wVoltage u with U1 pin 88'sProduct calculation, the i.e. voltage of U3 output W pin:
u 3 w = R 16 + R 17 10 R 16 · u 2 w u 8 = R 16 + R 17 10 R 16 · R 14 + R 15 10 R 14 u 1 u 8 2 = R 14 + R 15 10 R 14 · R 16 + R 17 10 R 16 u 1 ( R 12 R 13 u 14 ) 2
As shown in Figure 2, the C-V characteristic of input A, B is:
u = u 1 = u A - u B = R 1 i - u 3 w = R 1 i - R 14 + R 15 10 R 14 · R 16 + R 17 10 R 16 u 1 ( R 12 R 13 u 14 ) 2
Therefore,
i = 1 R 1 [ 1 + R 14 + R 15 10 R 14 · R 16 + R 17 10 R 16 ( R 12 R 13 u 14 ) 2 ] u
Wherein,
u 14 = - R 13 R 12 R 10 C ∫ ( R 9 R 6 u 14 + R 9 R 7 u 2 w + R 9 R 8 u 1 ) d t
The C-V characteristic of memristor simulating equivalent circuit, relatively learn that with voltage-controlled memristor C-V characteristic electricity leads:
G = 1 R 1 [ 1 + R 14 + R 15 10 R 14 · R 16 + R 17 10 R 16 ( R 12 R 13 u 14 ) 2 ]
The 1st pin of integrated operational amplifier U1 joins by resistance R 5 and the 2nd pin, and the 2nd pin is logicalCross R4 as signal input part, the 3rd pin passes through R3 ground connection, the 4th connect+15V of pin power supply VCC,The 11st connect-15V of pin power supply VEE; The 1st pin of integrated operational amplifier U1 is by resistance R 8 and the6 pins are connected, the 5th pin ground connection, and the 6th pin connects the 7th pin by resistance R 9; The 7th pin passes throughResistance R 10 and the 9th pin join; The parallel network of the 8th pin by capacitor C 1 and resistance R 11 and the9 pins join, the 10th pin ground connection; The 13rd pin connects the 8th pin by resistance R 12, the 12nd pinGround connection; The 14th pin joins by resistance R 13 and the 13rd pin, by resistance R 6 and the 6th pin phaseConnect.
The X1 pin of multiplier U2 connects the 1st pin of integrated operational amplifier U1, Y1 pin and integratedThe 8th pin of operational amplifier U1 joins, X2 pin and Y2 pin ground connection, connect+15V of VS+ pin electricitySource VCC, connect-15V of VS-pin power supply VEE, Z pin joins by resistance R 14 and W pin, logicalCross resistance R 15 ground connection, W pin joins by resistance R 7 and U1 the 6th pin.
The X1 pin of multiplier U3 connects the W pin of multiplier U2, and Y1 pin and integrated computation amplifyThe 8th pin of device U1 joins, X2 pin and Y2 pin ground connection, connect+15V of VS+ pin power supplyVCC, connect-15V of VS-pin power supply VEE, Z pin joins by resistance R 16 and W pin, passes throughResistance R 17 ground connection, W pin joins by resistance R 4 and U1 the 2nd pin.
Those of ordinary skill in the art will be appreciated that, above embodiment is only new for verifying this practicalityType, and not as to restriction of the present utility model, as long as in scope of the present utility model, to more thanVariation, the distortion of embodiment all will drop in protection domain of the present utility model.

Claims (1)

1. a voltage-controlled memristor emulator circuit floatingly, comprises integrated operational amplifier U1, multiplier U2, multiplier U3; It is characterized in that: resistance R 1 one end connects input (A), be connected with one end of resistance R 2 simultaneously, resistance R 1 one end other end ground connection, the other end of resistance R 2 is connected on integrated operational amplifier U1 pin 3, be connected the other end ground connection of resistance R 3 simultaneously with one end of resistance R 3; Resistance R 4 one end connect input (B), and one end of the other end and resistance R 5 joins, and is connected on integrated operational amplifier U1 pin 2 simultaneously, and the other end of resistance R 5 is connected on integrated operational amplifier U1 pin 1;
Described integrated operational amplifier U1 adopts LF347N; The pin 1 of described integrated operational amplifier U1 joins by resistance R 5 and pin 2, pin 2 connects input (B) by resistance R 4, and pin 3 connects input (A) by resistance R 2, by resistance R 3 ground connection, pin 4 meets power supply VCC, and pin 11 meets power supply VEE; The pin 1 of integrated operational amplifier U1 is connected with pin 6 by resistance R 8, pin 5 ground connection, and pin 6 connects pin 7 by resistance R 9; Pin 7 joins by resistance R 10 and pin 9; Pin 8 joins by parallel network and the pin 9 of capacitor C 1 and resistance R 11, pin 10 ground connection; Pin 13 connects pin 8 by resistance R 12, pin 12 ground connection; Pin 14 joins by resistance R 13 and pin 13, joins by resistance R 6 and pin 6;
Described multiplier U2 adopts AD633JN; The X1 pin of described multiplier U2 connects the pin 1 of integrated operational amplifier U1, Y1 pin is connected with the pin 8 of integrated operational amplifier U1, X2 pin and Y2 pin ground connection, VS+ pin meets power supply VCC, VS-pin meets power supply VEE, Z pin is connected with W pin by resistance R 14, and by resistance R 15 ground connection, W pin is connected with the pin 6 of integrated operational amplifier U1 by resistance R 7;
Described multiplier U3 adopts AD633JN; The X1 pin of multiplier U3 connects the W pin of multiplier U2, Y1 pin is connected with the pin 8 of integrated operational amplifier U1, X2 pin and Y2 pin ground connection, VS+ pin meets power supply VCC, VS-pin meets power supply VEE, Z pin is connected with W pin by resistance R 16, and by resistance R 17 ground connection, W pin is connected with the pin 2 of integrated operational amplifier U1 by resistance R 4.
CN201521049866.8U 2015-12-15 2015-12-15 Superficially voltage -controlled recall hinder ware emulation ware circuit Withdrawn - After Issue CN205265656U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201521049866.8U CN205265656U (en) 2015-12-15 2015-12-15 Superficially voltage -controlled recall hinder ware emulation ware circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201521049866.8U CN205265656U (en) 2015-12-15 2015-12-15 Superficially voltage -controlled recall hinder ware emulation ware circuit

Publications (1)

Publication Number Publication Date
CN205265656U true CN205265656U (en) 2016-05-25

Family

ID=56007158

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201521049866.8U Withdrawn - After Issue CN205265656U (en) 2015-12-15 2015-12-15 Superficially voltage -controlled recall hinder ware emulation ware circuit

Country Status (1)

Country Link
CN (1) CN205265656U (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105553459A (en) * 2015-12-15 2016-05-04 杭州电子科技大学 Floating voltage-controlled memristor simulator circuit
CN108804839A (en) * 2018-06-15 2018-11-13 成都师范学院 A kind of extremely simple floating ground magnetic control recalls condenser circuit simulation model
CN108804840A (en) * 2018-06-15 2018-11-13 成都师范学院 A kind of extremely simple floating ground magnetic control memristor circuit simulation model
CN108846215A (en) * 2018-06-21 2018-11-20 成都师范学院 A kind of extremely simple floating ground lotus control memristor circuit simulation model
CN108875204A (en) * 2018-06-15 2018-11-23 成都师范学院 Sensor circuit simulation model is recalled in a kind of extremely simple floating ground lotus control
CN108959837A (en) * 2018-09-30 2018-12-07 杭州电子科技大学 A kind of realization circuit of four values memristor emulator

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105553459A (en) * 2015-12-15 2016-05-04 杭州电子科技大学 Floating voltage-controlled memristor simulator circuit
CN105553459B (en) * 2015-12-15 2018-06-01 杭州电子科技大学 Voltage-controlled memristor emulator circuit floatingly
CN108804839A (en) * 2018-06-15 2018-11-13 成都师范学院 A kind of extremely simple floating ground magnetic control recalls condenser circuit simulation model
CN108804840A (en) * 2018-06-15 2018-11-13 成都师范学院 A kind of extremely simple floating ground magnetic control memristor circuit simulation model
CN108875204A (en) * 2018-06-15 2018-11-23 成都师范学院 Sensor circuit simulation model is recalled in a kind of extremely simple floating ground lotus control
CN108875204B (en) * 2018-06-15 2022-04-26 成都师范学院 Extremely simple floating ground load control memory sensor circuit simulation model
CN108846215A (en) * 2018-06-21 2018-11-20 成都师范学院 A kind of extremely simple floating ground lotus control memristor circuit simulation model
CN108846215B (en) * 2018-06-21 2022-04-26 成都师范学院 Extremely simple floating ground load control memristor circuit simulation model
CN108959837A (en) * 2018-09-30 2018-12-07 杭州电子科技大学 A kind of realization circuit of four values memristor emulator
CN108959837B (en) * 2018-09-30 2024-03-01 杭州电子科技大学 Realization circuit of four-value memristor simulator

Similar Documents

Publication Publication Date Title
CN205265656U (en) Superficially voltage -controlled recall hinder ware emulation ware circuit
CN103219983B (en) A kind of memristor equivalent simulation circuit
CN105553459A (en) Floating voltage-controlled memristor simulator circuit
CN103297025B (en) A kind of memristor emulator
CN206991310U (en) A kind of logarithmic recalls container equivalent simulation circuit
CN107169253A (en) Logarithmic recalls container equivalent simulation circuit
CN103294872B (en) A kind of construction method of memristor equivalent circuit
CN103531230B (en) A kind ofly recall container based on the floating of memristor and recall sensor simulator
CN105375914B (en) It is a kind of to realize the analog circuit for recalling sensor characteristic
CN107451380B (en) Circuit for realizing exponential type charge control memory capacitor simulator
CN109829194A (en) A kind of absolute value magnetic control memristor equivalent simulation circuit
CN203193601U (en) Analog circuit with characteristic of memristor
CN105447270A (en) Exponential type memory inductor circuit
CN204721366U (en) A kind of Generation of Chaotic Signals based on memristor
CN205232190U (en) Analog circuit of sensilla characteristic is recalled in realization
CN106557627A (en) recursive parameter estimation method based on state space Wiener model
CN105389443A (en) Memory sensor logarithmic model equivalent circuit
CN103729518A (en) Simple memristor emulator
CN203219277U (en) Memristor emulator
CN108718190A (en) A kind of local active memristor emulator of exponential type
CN109002602B (en) Inductor simulator circuit is recalled to magnetism accuse of floating
CN204102401U (en) A kind of for simulating the experimental provision recalling resistance element
CN110147597A (en) A kind of multistable magnetic control memristor equivalent simulation circuit
CN205247388U (en) Recall circuit of container emulation ware
CN105373678A (en) Circuit for memory capacitor simulator

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
AV01 Patent right actively abandoned
AV01 Patent right actively abandoned
AV01 Patent right actively abandoned

Granted publication date: 20160525

Effective date of abandoning: 20180601

AV01 Patent right actively abandoned

Granted publication date: 20160525

Effective date of abandoning: 20180601