CN108804840A - A kind of extremely simple floating ground magnetic control memristor circuit simulation model - Google Patents
A kind of extremely simple floating ground magnetic control memristor circuit simulation model Download PDFInfo
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Abstract
The invention discloses a kind of extremely simple floating ground magnetic control memristor circuit simulation models, including port a, port b, thyrite UR, resistance R and voltage integrator A, thyrite URIncluding voltage controling end ucWith controlled resistor Ru, thyrite URInterior controlled resistor RuResistance value by voltage controling end ucVoltage value control, voltage integrator A includes voltage input end u and voltage output end uc.Equivalent A, B port identity of magnetic control memristor W of the electrical characteristic of floating ground magnetic control memristor circuit simulation model port a, the b, it only needs using existing 3 elements in simulation software, for Two-port netwerk model, it is further to reduce the complexity and parts number for having magnetic control memristor circuit simulation model, have the advantages that memristor value variation range it is flexible, it is no ground limit, operating voltage range is wide and should be readily appreciated that.
Description
Technical field
The invention patent relates to new-type circuit component models to construct field, and in particular to a kind of extremely simple floating ground magnetic control memristor
Device circuit simulation model.
Background technology
1971, the Cai Shaotang of University of California Berkeley professor from Circuit theory completeness, prediction except resistance,
Except capacitance and inductance, there is also the 4th kind characterization charge and magnetic flux between relationship passive basic circuit elements, and by its
It is named as memristor (memristor).HP Lab exists within 2008《Nature》Magazine gives to the world the result of one's studies, and announces that physics is real
The two-terminal device with memristor feature is showed.The breakthrough of HP Lab causes the extensive concern of academia and industrial quarters, lifts
Play the upsurge that people study memristor.
Memristor is a kind of nonlinear resistance, and resistance value can change with the history of input current or voltage,
The quantity of electric charge or magnetic flux that can be flowed through by the variation memory of resistance value.The research of memristor is related to microelectronics, cohesion
The multidisciplinary field such as state physics, materialogy, Circuits and Systems, computer and Neurobiology belongs to emerging cross discipline research.
Memristor has the characteristics that simple in structure, easy of integration, high speed, low-power consumption and compatible with CMOS technology, can not only meet the next generation
The demand of high density data storage and high-performance computer to general-purpose storage, moreover it is possible to realize nonvolatile state logical operation and class
Cranial nerve state calculation function.
Memristor application circuit is emulated to reinforcing memristor Analysis of Electric Circuit Theory, Optimization Design of Electronic Circuits scheme, improving design effect
Rate and reduction design cost etc. play an important role.However in the circuit simulating softwares such as Multisim directly without energy
The memristor simulation model used, construct memristor circuit simulation model become research memristor must face the problem of it
One.Now common memristor simulation model have boundary migration model, synaptic activity rely on plasticity model, Pershin models,
The active magnetic control model of Biolek models, quadratic nonlinearity and cubic non-linearity magnetic control model etc..These circuit simulation models are main
Shortcoming be：Some need one end is grounded (Chinese invention patent application number：201611201572.1)；Some is not two ends
Mouth mold type (Chinese invention patent application number：201710070325.0)；Some Two-port netwerk voltage is no more than active device in model
Part supply voltage (Chinese invention patent Authorization Notice No.：CN 103297025 B)；The component of some need constructs complexity more
(Chinese invention patent application number：201510967269.1).
Invention content
Technical problem to be solved by the invention is to provide a kind of extremely succinct floating ground magnetic control memristor circuit simulation moulds
Type solves existing magnetic control memristor circuit simulation model and needs that one end ground connection, not to be Two-port netwerk model, Two-port netwerk voltage cannot surpass
Cross active device supply voltage in model, the component of needs constructs complicated problem more.
The technical solution that the present invention solves above-mentioned technical problem is as follows：A kind of extremely simple floating ground magnetic control memristor circuit simulation
Model, including port a, port b, thyrite UR, resistance R and voltage integrator A, the thyrite URIt is controlled including voltage
Hold ucWith controlled resistor Ru, the thyrite URInterior controlled resistor RuResistance value by voltage controling end ucVoltage value control,
The voltage integrator A includes voltage input end u and voltage output end uc, the thyrite URInterior controlled resistor RuOne end
Be connected with one end of resistance R, the other end of the resistance R respectively with the negative terminal and port b of voltage input end in voltage integrator A
It is connected, the thyrite URInterior controlled resistor RuThe other end respectively with the anode of voltage input end in voltage integrator A and end
Mouth a is connected, voltage output end and the thyrite U of the voltage integrator ARVoltage controling end be connected；The thyrite UR
Interior controlled resistor RuResistance value Ru=Kr×uc, KrFor thyrite URControl coefrficient；From moment t0To tn, the voltage product
Divide the voltage value of voltage output end in device AKiFor the proportionality coefficient of voltage integrator A.
The beneficial effects of the invention are as follows：In the present invention, floating ground magnetic control memristor circuit simulation model port a, port b
Equivalent A, B port identity of magnetic control memristor W of electrical characteristic, it is only necessary to use existing 3 elements in simulation software
(component), it is Two-port netwerk model, it is further to reduce the complexity and element for having magnetic control memristor circuit simulation model
Number, have the advantages that memristor value variation range it is flexible, it is no ground limit, operating voltage range is wide and should be readily appreciated that.
Description of the drawings
Fig. 1 is the principle of the present invention figure
Fig. 2 is magnetic flux in the embodiment of the present inventionWith the graph of relation of quantity of electric charge q
Fig. 3 is magnetic flux in the embodiment of the present inventionValue is led with recallingGraph of relation
Fig. 4 is the volt of different frequency sinusoidal voltage source u (t) voltage values and corresponding ports electric current i (t) in the embodiment of the present invention
Pacify relational theory curve graph
Fig. 5 is the volt of frequency is 5Hz in the embodiment of the present invention sinusoidal voltage source u (t) voltage values and port current i (t)
Peace relationship simulation curve figure
Fig. 6 is the volt of frequency is 50Hz in the embodiment of the present invention sinusoidal voltage source u (t) voltage values and port current i (t)
Peace relationship simulation curve figure
Fig. 7 is sinusoidal voltage source u (t) voltage values and port current i (t) that frequency is 500Hz in the embodiment of the present invention
Voltammetric Relation simulation curve figure
Specific implementation mode
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
As shown in Figure 1, a kind of extremely simple floating ground magnetic control memristor circuit simulation model, including port a, port b, voltage-controlled electricity
Hinder UR, resistance R and voltage integrator A, thyrite URIncluding voltage controling end ucWith controlled resistor Ru, thyrite URIt is interior controlled
Resistance RuResistance value by voltage controling end ucVoltage value control, voltage integrator A includes voltage input end u and voltage output
Hold uc, thyrite URInterior controlled resistor RuOne end be connected with one end of resistance R, the other end of resistance R respectively with voltage integrating meter
The negative terminal of voltage input end is connected with port b in device A, the thyrite URInterior controlled resistor RuThe other end respectively with voltage
The anode of voltage input end is connected with port a in integrator A, voltage output end and the thyrite U of voltage integrator ARElectricity
Control terminal is pressed to be connected；Thyrite URInterior controlled resistor RuResistance value Ru=Kr×uc, KrFor thyrite URControl coefrficient；
From moment t0To tn, the voltage value of voltage output end in the voltage integrator AKiFor voltage integrator A
Proportionality coefficient.
The operation principle of the present invention is that：
If a, b both end voltage u and port current i of magnetic control memristor circuit simulation model use associated reference direction,
The Voltammetric Relation for describing its characteristic is Value is led for recalling for magnetic control memristor circuit simulation model.Recall and leads value For from moment t0To tnThe magnetic flux of two terminal voltage u of magnetic control memristor circuit simulation model, andT indicates the time,
The mathematical relationship of magnetic control memristor circuit simulation model is represented by
Recall and leads valueDependent on magnetic fluxWith magnetic flux memory function.Magnetic fluxIt is non-between quantity of electric charge q
Linear relationship isMagnetic control memristor circuit simulation model existsThe relation curve of plane such as Fig. 2
It is shown, magnetic fluxValue is led with recallingRelation curve it is as shown in Figure 3.
By bis- end magnetic control memristor circuit simulation model a, b connection sinusoidal voltage source u (t) be used as pumping signal, u (t)=
Um× sin (2 π ft), UmFor the crest voltage of voltage source, f is the frequency of sinusoidal voltage source, the π f of angular frequency=2.In t0Moment,
The state variable magnetic flux of magnetic control memristor circuit simulation modelWhen being 0, from t0Moment is to tnMoment state variableThe recalling of magnetic control memristor circuit simulation model leads value and changes at any time,
And W (t)=1/ (R1+Kr×Ki×Um/ ω × (1-cos (ω t))), magnetic control memristor circuit simulation model port electricity can be obtained
Flow i (t)=W (t) × u (t)=1/ (R1+Kr×Ki×Um/ω×(1-cos(ωt)))×Um×sin(2πft)。
Set resistance R=50 Ω, the thyrite control coefrficient K in magnetic control memristor circuit simulation modelr=500 Ω/V
With voltage integrator Proportional coefficient Ki=1.Take the peak value U of excitation sinusoidal voltage source u (t)m=7.071V, and state becomes when t=0
Measure magnetic fluxIt is 0, obtains magnetic control memristor circuit when sinusoidal voltage source u (t) frequencies f is respectively 5Hz, 50Hz and 500Hz
The Voltammetric Relation theoretical curve of the excitation sinusoidal voltage source u (t) and corresponding ports electric current i (t) of simulation model are as shown in Figure 4.Just
Multisim simulation results when string voltage source u (t) frequencies f is 5Hz are as shown in figure 5, sinusoidal voltage source u (t) frequencies f is 50Hz
When Multisim simulation results as shown in fig. 6, sinusoidal voltage source u (t) frequencies f be 500Hz when Multisim simulation results
As shown in fig. 7, Multisim simulation results are consistent with theoretical curve as shown in Figure 4.
The Voltammetric Relation theoretical curve and simulation result of the ports magnetic control memristor circuit simulation model a and b meet memristor
Three substantive characteristics of device W：1. the VA characteristic curve of the lower magnetic control memristor circuit simulation model of sinusoidal voltage source u (t) excitations
To pinch hysteresis curves；2. pinching hysteresis curves lobe area with the f increases of sinusoidal voltage source frequency to reduce；3. sinusoidal voltage source frequency f tends to
Hysteresis curves are pinched when infinitely great is punctured into straight line.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (1)
1. a kind of extremely simple floating ground magnetic control memristor circuit simulation model, which is characterized in that including port a, port b, voltage-controlled electricity
Hinder UR, resistance R and voltage integrator A, the thyrite URIncluding voltage controling end ucWith controlled resistor Ru, the voltage-controlled electricity
Hinder URInterior controlled resistor RuResistance value by voltage controling end ucVoltage value control, the voltage integrator A includes control source
Hold u and voltage output end uc, the thyrite URInterior controlled resistor RuOne end be connected with one end of resistance R, the resistance R
The other end be connected respectively with the negative terminal of voltage input end in voltage integrator A and port b, the thyrite URInterior controlled electricity
Hinder RuThe other end be connected respectively with the anode of voltage input end in voltage integrator A and port a, the voltage integrator A's
Voltage output end and thyrite URVoltage controling end phase；The thyrite URInterior controlled resistor RuResistance value Ru=Kr×
uc, KrFor thyrite URControl coefrficient；From moment t0To tn, the voltage value of voltage output end in the voltage integrator AKiFor the proportionality coefficient of voltage integrator A.
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| CN201810619965.7A CN108804840B (en) | 2018-06-15 | 2018-06-15 | Extremely simple floating magnetic control memristor circuit simulation model |
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| CN108804840B CN108804840B (en) | 2022-09-30 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110008651A (en) * | 2019-05-20 | 2019-07-12 | 成都师范学院 | A kind of active magnetic control memristor simulator of quadratic nonlinearity |
| CN110032830A (en) * | 2019-05-20 | 2019-07-19 | 成都师范学院 | Cubic non-linearity magnetic control memristor simulator based on current transmission device |
| CN110046472A (en) * | 2019-05-20 | 2019-07-23 | 成都师范学院 | Quadratic nonlinearity magnetic control memristor simulator based on current transmission device |
| CN110111655A (en) * | 2019-05-06 | 2019-08-09 | 成都师范学院 | A kind of extremely simple floating ground magnetic control recalls sensor circuit simulation model |
| CN111327286A (en) * | 2020-03-05 | 2020-06-23 | 杭州电子科技大学 | Mechanical load control memristor based on hardware integral control |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110111655A (en) * | 2019-05-06 | 2019-08-09 | 成都师范学院 | A kind of extremely simple floating ground magnetic control recalls sensor circuit simulation model |
| CN110008651A (en) * | 2019-05-20 | 2019-07-12 | 成都师范学院 | A kind of active magnetic control memristor simulator of quadratic nonlinearity |
| CN110032830A (en) * | 2019-05-20 | 2019-07-19 | 成都师范学院 | Cubic non-linearity magnetic control memristor simulator based on current transmission device |
| CN110046472A (en) * | 2019-05-20 | 2019-07-23 | 成都师范学院 | Quadratic nonlinearity magnetic control memristor simulator based on current transmission device |
| CN110046472B (en) * | 2019-05-20 | 2023-11-10 | 成都师范学院 | Secondary nonlinear magnetic control memristor simulator based on current transmitter |
| CN110032830B (en) * | 2019-05-20 | 2023-11-14 | 成都师范学院 | Three-time nonlinear magnetic control memristor simulator based on current transmitter |
| CN110008651B (en) * | 2019-05-20 | 2023-11-14 | 成都师范学院 | Secondary nonlinear active magnetic control memristor simulator |
| CN111327286A (en) * | 2020-03-05 | 2020-06-23 | 杭州电子科技大学 | Mechanical load control memristor based on hardware integral control |
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