CN110008651B - Secondary nonlinear active magnetic control memristor simulator - Google Patents
Secondary nonlinear active magnetic control memristor simulator Download PDFInfo
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- CN110008651B CN110008651B CN201910418444.XA CN201910418444A CN110008651B CN 110008651 B CN110008651 B CN 110008651B CN 201910418444 A CN201910418444 A CN 201910418444A CN 110008651 B CN110008651 B CN 110008651B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Abstract
The invention discloses a secondary nonlinear active magnetic control memristor simulator, which comprises a negative resistance equivalent circuit, an integral operation circuit and a multiplier M 1 And resistance R 2 The integrating operation circuit comprises a current transmitter U 1 Resistance R 1 And capacitor C 1 The negative resistance equivalent circuit includes an operational amplifier U 2 Resistance R 3 Resistance R 4 And resistance R 5 . The electrical characteristics of the ports a and b of the secondary nonlinear active magnetic memristor are equivalent to the port characteristics of the magnetic memristor, the volt-ampere characteristic curve of the secondary nonlinear active magnetic memristor is in two-four quadrants, energy can be continuously provided outwards during operation, and the secondary nonlinear active magnetic memristor can be widely applied to memristors (such as Chua's memristor circuits) which need to provide energy outwards.
Description
Technical Field
The invention relates to the field of novel circuit element simulator construction, in particular to a secondary nonlinear active magnetic control memristor simulator.
Background
In 1971, cai Shaotang of the university of california berkeley division taught that, starting from the theoretical completeness of the circuit, a fourth basic circuit element, in addition to resistance, capacitance and inductance, was predicted to exist that characterizes the relationship between charge and magnetic flux, and was named memristor. The 2008 Hewlett-packard published research results in the Nature journal, announced that physical implementation of a two-terminal device with memristor characteristics. Breakthroughs in the hewlett-packard laboratory have raised significant attention in academia and industry, raising the hot flashes of research on memristors.
Memristors are nonlinear resistors whose resistance value can change with the history of an input current or voltage, i.e., the amount of charge or magnetic flux that can flow through can be memorized by the change in resistance value. The research of memristors relates to the fields of microelectronics, condensed state physics, materialics, circuits and systems, computers, neurobiology and other multidisciplinary fields, and belongs to the research of emerging interdisciplines. The memristor has the characteristics of simple structure, easy integration, high speed, low power consumption, compatibility with a CMOS process and the like, can meet the requirements of a next generation of high-density information storage and high-performance computer on a general memory, and can realize the functions of nonvolatile state logic operation and brain-like nerve state operation.
Memristors have not yet been widely used in commercial use at present, and single-port circuits are generally constructed by using existing circuit components (resistors, capacitors, diodes, triodes, operational amplifiers, and the like) so that the electrical characteristics of the ports are equivalent to those of the memristors, and such circuits are called memristors. The memristor simulators in common use include: the device comprises a flow control discharge tube memristor simulator, a thermistor memristor simulator, a boundary migration memristor simulator, a synapse activity dependent plasticity memristor simulator, a Pershin memristor simulator, a Biolek memristor simulator, a secondary nonlinear active magnetic control memristor simulator, a tertiary nonlinear magnetic control memristor simulator and the like. Different memristor simulators have different application occasions, and the memristor simulators play an important role in the aspects of memristor circuit design, circuit verification, circuit optimization, design cost reduction and the like.
Bao Bacheng teaches that the proposed secondary nonlinear active magnetic control memristor simulator and the tertiary nonlinear magnetic control memristor simulator are widely applied to time domain analysis, frequency domain analysis and kinetic analysis of memristor circuits; the two memristor simulators play a good demonstration role in designing the memristor simulators, an integral operation circuit formed by an operation amplifier is arranged in each simulator, and a voltage follower is connected in series with the input end of the integral operation circuit so as to avoid the load effect of the integral operation circuit. The instantaneous power of the existing secondary nonlinear active magnetic control memristor simulator can change between a positive value and a negative value along with the time evolution.
Disclosure of Invention
The invention aims to provide a secondary nonlinear active magnetic control memristor simulator, which solves the problem that the instantaneous power of the existing secondary nonlinear active magnetic control memristor in the whole period of an input alternating voltage signal changes between a positive value and a negative value along with time and is not full of the negative value (namely, can not continuously provide energy outwards).
The technical scheme for solving the technical problems is as follows: a secondary nonlinear active magnetic control memristor simulator comprises a negative resistance equivalent circuit, an integral operation circuit and a multiplier M 1 And resistance R 2 The integral operation circuit comprises a current transmitter U 1 Resistance R 1 And capacitor C 1 The current transmitter U 1 Y pin of (2), multiplier M 1 Input terminal m pin of (2) and resistor R 2 One end of the port (a) is connected with the port (a); the current transmitter U 1 X pin of (d) and resistor R 1 Is connected to one end of the resistor R 1 The other end of the first electrode is grounded; the current transmitter U 1 Z pin of (C) and capacitor C 1 Is connected to one end of the capacitor C 1 The other end of the first electrode is grounded; the current transmitter U 1 W pin of (2) and multiplier M 1 Is connected with the input end n of the circuit board; multiplier M 1 Output terminal v and resistor R of (2) 2 Is connected with the other end of the connecting rod; the negative resistance equivalent circuit comprises an operational amplifier U 2 Resistance R 3 Resistance R 4 And resistance R 5 The operational amplifier U 2 And a resistor R 3 Is connected with the port a at one end, and the resistor R 3 And the other end of (2) and the resistor R 4 One end of each of the two circuits is connected with an operational amplifier U 2 Is connected with the output end of the resistor R 4 And the other end of (2) and the resistor R 5 One end of each of the two circuits is connected with an operational amplifier U 2 Is connected to the inverting input terminal of the resistor R 5 The other end of the first electrode is grounded; the current transmitter U 1 The port characteristics of (a) are: u (u) x ＝u y ，i z ＝i x ，i y ＝0，u w ＝u z ，u x 、u y 、u z And u w Respectively represent the current transmitters U 1 Voltages of x, y, z and w pins, i x 、i y And i z Respectively represent the current transmitters U 1 Current values of x, y and z pins; the resistor R 3 Resistance value and resistance R of (2) 4 The resistance values of (2) are equal.
On the basis of the technical scheme, the invention can be improved as follows.
Further, the current transmitter U 1 Model number AD844; the beneficial effects of the adoption of the step are as follows: AD844 is a commonly used current feedback operational amplifier, and when working in a feedback-free state, the operational function of the current transmitter can be directly realized, and the current feedback operational amplifier has the advantages of high broadband, quick response and easiness in purchase.
Further, the multiplier M 1 Model AD633; the beneficial effects of the adoption of the step are as follows: AD633 is a complete four-quadrant analog multiplier with high input impedance and high broadband responseWide application range and easy purchase.
Further, the multiplier M 1 Voltage u at output v v Voltage u at input terminal m m Voltage u at input n n The relation is: u (u) v ＝gu m u n G is multiplier M 1 Is a scale factor of (a).
Further, the operational amplifier U 2 Model number OP07; the beneficial effects of the adoption of the step are as follows: OP07 is an operational amplifier with a low offset voltage, and the negative resistance equivalent circuit thus constructed has higher accuracy.
The beneficial effects of the invention are as follows: in the invention, the electrical characteristics of the ports a and b of the secondary nonlinear active magnetic memristor are equivalent to the port characteristics of the magnetic memristor, the volt-ampere characteristic curve of the secondary nonlinear active magnetic memristor is in two-four quadrants, and the secondary nonlinear active magnetic memristor can continuously provide energy outwards during working, and can be widely applied to memristors (such as Chua memristor circuits) which need to provide energy outwards.
Drawings
FIG. 1 is a schematic diagram of the present invention
FIG. 2 shows a sinusoidal voltage source u with a frequency of 100Hz in an embodiment of the present invention in (t) and Port current i in Volt-ampere characteristic simulation graph of (t)
FIG. 3 shows a sinusoidal voltage source u with a frequency of 200Hz in an embodiment of the present invention in (t) and Port current i in Volt-ampere characteristic simulation graph of (t)
FIG. 4 shows a sinusoidal voltage source u with a frequency of 1000Hz in an embodiment of the present invention in (t) and Port current i in Volt-ampere characteristic simulation graph of (t)
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
As shown in FIG. 1, a secondary nonlinear active magnetic control memristor simulator comprises a negative resistance equivalent circuit, an integral operation circuit and a multiplier M 1 And resistance R 2 The integrating operation circuit comprises a current transmitter U 1 Resistance R 1 And capacitor C 1 The current transmitter U 1 Y pin of (2), multiplier M 1 Input terminal m pin of (2) and resistor R 2 One end of the port (a) is connected with the port (a); current transmitter U 1 X pin of (d) and resistor R 1 Is connected to one end of resistor R 1 The other end of the first electrode is grounded; current transmitter U 1 Z pin of (C) and capacitor C 1 Is connected to one end of capacitor C 1 The other end of the first electrode is grounded; current transmitter U 1 W pin of (2) and multiplier M 1 Is connected with the input end n of the circuit board; multiplier M 1 Output terminal v and resistor R of (2) 2 Is connected with the other end of the connecting rod; the negative resistance equivalent circuit comprises an operational amplifier U 2 Resistance R 3 Resistance R 4 And resistance R 5 The operational amplifier U 2 And a resistor R 3 Is connected with the port a at one end, and the resistor R 3 And the other end of (2) and the resistor R 4 One end of each of the two circuits is connected with an operational amplifier U 2 Is connected with the output end of the resistor R 4 And the other end of (2) and the resistor R 5 One end of each of the two circuits is connected with an operational amplifier U 2 Is connected to the inverting input terminal of the resistor R 5 The other end of the first electrode is grounded; current transmitter U 1 The port characteristics of (a) are: u (u) x ＝u y ，i z ＝i x ，i y ＝0，u w ＝u z ，u x 、u y 、u z And u w Respectively represent the current transmitters U 1 Voltages of x, y, z and w pins, i x 、i y And i z Respectively represent the current transmitters U 1 Current values of x, y and z pins; resistor R 3 Resistance value and resistance R of (2) 4 The resistance values of (2) are equal.
In the embodiment of the invention, the current transmitter U 1 Model number AD844.
In the embodiment of the invention, the multiplier M 1 Model number AD633.
In the embodiment of the invention, the multiplier M 1 Voltage u at output v v Voltage u at input terminal m m Voltage u at input n n The relation is: u (u) v ＝gu m u n G is multiplier M 1 Is a scale factor of (a).
In the embodiment of the invention, the operational amplifier U 2 Model number OP07.
The working principle of the invention is as follows:
memristors are a characteristic of charge q and magnetic fluxBasic circuit elements of the relationship between them. Bao Bacheng teaches that the mathematical relationship of the proposed secondary nonlinear active magnetic control memristor simulator is
Where a and b are constants. Memristive value corresponding to formula (1)
Memristive valueMagnetic flux of->The absolute value is taken, and an absolute value operation circuit is used when the corresponding memristor simulator circuit is designed.
The mathematical relationship of the secondary nonlinear active magnetic control memristor simulator implemented by the invention is that
Corresponding memristive value
Memristive value shown in (4)Magnetic flux of->The absolute value is not taken; the circuit shown in fig. 1 has no absolute value operation circuit, so that components and parts required by the absolute value operation circuit are saved.
Voltage u at a and b ends of secondary nonlinear active magnetic control memristor simulator in (t) and the port current i in (t) employing an associated reference direction.
From the characteristics of the current transmitter, the current flows into the current transmitter U 1 The current of the y pin of (2) is 0; multiplier M 1 Is large and flows into the multiplier M 1 The current at input terminal m is also 0; from kirchhoff's law, the port current i in (t) is equal to the current i flowing through the negative resistance equivalent circuit 1 (t) and resistance R 2 Is the current i of (2) 2 The sum of (t), i.e
i in (t)＝i 1 (t)+i 2 (t)。 (5)
As for the negative resistance equivalent circuit, the "virtual short circuit" and "virtual open circuit" characteristics of the operational amplifier are known, and the negative resistance equivalent circuit flows through the resistor R 5 Is (1) the current of the (a)
Operational amplifier U 2 Is the output terminal voltage of (2)
u o (t)＝u in (t)+i 3 (t)R 4 。 (7)
The "virtual break" characteristic of the operational amplifier and kirchhoff current law are combined to determine the current i of the negative resistance equivalent circuit 1 (t) all flow through resistor R 3 I.e.
From (6) (7) (8)
Resistor R 3 Resistance value and resistance R of (2) 4 The resistance value of the negative resistance equivalent circuit is equal to the port resistance of the negative resistance equivalent circuit
Realize the resistance R 5 The resistance of (2) is converted to a negative value at the port of the equivalent circuit.
By current transmitter U 1 The port characteristics of (a) can be found:
wherein t is 0 And t n The start time and the end time of integration are indicated, respectively. Due to multiplier M 1 An input terminal n and an output terminal of the integral operation circuit (current transmitter U 1 W pin of (w) are connected, multiplier M 1 Voltage at input terminal n
In the method, in the process of the invention,for from time t 0 To time t n Input secondary nonlinear active magnetic control memristor simulator voltage u in Magnetic flux of (t).
Multiplier M 1 Voltage u at output v v (t), voltage u at input terminal m m (t), voltage u at input terminal n n The relation (t) is:
u v (t)＝gu m (t)u n (t)， (12)
g is multiplier M 1 Is a scale factor of (a). Due to u m (t)＝u in (t) substituting the formula (11) into the formula (12)
From ohm's law, flow through resistor R 2 Is (1) the current of the (a)
Substituting equation (14) and equation (9 b) into equation (5) yields the port current
From the above, the mathematical relationship of the secondary nonlinear active magnetic control memristor simulator can be expressed as
From equation (16), the memristive valueIs input with voltage u in Magnetic flux ∈t>The control of the circuit shown in fig. 1 is described as a magnetically controlled memristor simulator. Memristance +.>As can be seen by comparison with formula (4):
further describing the circuit shown in FIG. 1 as a secondary nonlinear magnetic controlled memristor simulator.
Two ends of a secondary nonlinear active magnetic control memristor simulator a and b are connected with a sinusoidal voltage source u in (t) as an excitation signal, u in (t)＝U m ×sin(2πft)，U m For the peak voltage of the voltage source, f is the frequency of the sinusoidal voltage source, angular frequency ω=2pi f. At t 0 Moment of time, state variable magnetic fluxAt 0, from t 0 From time to t n Time state variable
The memristive value of the secondary nonlinear active magnetic control memristor simulator changes with time, and
the port current of the simulation model of the magnetic memristor circuit can be obtained
Instantaneous power consumed
To complete Multisim software simulation test of the secondary nonlinear active magnetic control memristor simulator, resistor R is taken 1 =1kΩ, resistance R 2 =1kΩ, resistance R 3 =1kΩ, resistance R 4 =1kΩ, resistance R 5 =750Ω, capacitor C 1 Multiplier M of model AD633 =0.47 μf 1 Scale factor g=0.1, ad633. Both AD844 and OP07 were powered by a positive and negative 12 volt dual power supply. Setting excitation sine voltage source u in Peak value U of (t) m =1v, and t 0 Magnetic flux at =0Is 0, and a sinusoidal voltage source u is obtained in (t) sinusoidal voltage source u of secondary nonlinear active magnetic control memristor simulator with frequencies f of 100Hz, 200Hz and 1000Hz respectively in (t) and corresponding port current i in The voltammetric relationship simulation curves of (t) are shown in fig. 2, 3 and 4.
As can be seen from fig. 2, 3 and 4, the secondary nonlinear active magnetic memristor simulators have a and b port volt-ampere relationships that meet three essential characteristics of memristors: 1. the volt-ampere characteristic curve of the magnetic control memristor simulator under the excitation of a sinusoidal voltage source is a pinch loop; 2. the area of the pinching loop lobe is reduced along with the increase of the sinusoidal voltage source frequency f; 3. the pinch loop contracts to a (near) straight line when the sinusoidal voltage source frequency f tends to infinity.
As can be seen from fig. 2, 3 and 4, the voltammetric characteristic curve is in the second quadrant, the voltage signal u in (t) and Port current i in (t) opposite polarity, corresponding instantaneous power consumption p (t) =i in (t)×u in (t) is less than 0; component parameters and a signal source u can also be used in Substituting the parameter (t) into the formula (21) to theoretically obtain a conclusion that the instantaneous power p (t) is always smaller than 0; both theoretical and simulation experiments prove that the secondary nonlinear active magnetic control memristor simulator has activity and can continuously provide energy outwards during working.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (5)
1. A secondary nonlinear active magnetic control memristor simulator is characterized by comprising a negative resistance equivalent circuit, an integral operation circuit and a multiplier M 1 And resistance R 2 The integral operation circuit comprises a current transmissionTransfusion system U 1 Resistance R 1 And capacitor C 1 The method comprises the steps of carrying out a first treatment on the surface of the The current transmitter U 1 Y pin of (2), multiplier M 1 Input terminal m pin of (2) and resistor R 2 One end of the port (a) is connected with the port (a); the current transmitter U 1 X pin of (d) and resistor R 1 Is connected to one end of the resistor R 1 The other end of the first electrode is grounded; the current transmitter U 1 Z pin of (C) and capacitor C 1 Is connected to one end of the capacitor C 1 The other end of the first electrode is grounded; the current transmitter U 1 W pin of (2) and multiplier M 1 Is connected with the input end n of the circuit board; multiplier M 1 Output terminal v and resistor R of (2) 2 Is connected with the other end of the connecting rod; the negative resistance equivalent circuit comprises an operational amplifier U 2 Resistance R 3 Resistance R 4 And resistance R 5 The operational amplifier U 2 And a resistor R 3 Is connected with the port a at one end, and the resistor R 3 And the other end of (2) and the resistor R 4 One end of each of the two circuits is connected with an operational amplifier U 2 Is connected with the output end of the resistor R 4 And the other end of (2) and the resistor R 5 One end of each of the two circuits is connected with an operational amplifier U 2 Is connected to the inverting input terminal of the resistor R 5 The other end of the first electrode is grounded; the current transmitter U 1 The port characteristics of (a) are: u (u) x ＝u y ，i z ＝i x ，i y ＝0，u w ＝u z ，u x 、u y 、u z And u w Respectively represent the current transmitters U 1 Voltages of x, y, z and w pins, i x 、i y And i z Respectively represent the current transmitters U 1 Current values of x, y and z pins; the resistor R 3 Resistance value and resistance R of (2) 4 The resistance values of (2) are equal.
2. The secondary nonlinear active magnetic memory resistance simulator of claim 1, wherein the current transmitter U 1 Model number AD844.
3. A secondary non-claimed in claim 1The linear active magnetic control memristor simulator is characterized in that the multiplier M 1 Model number AD633.
4. The secondary nonlinear active magnetic memory resistance simulator of claim 1 wherein the multiplier M 1 Voltage u at output v v Voltage u at input terminal m m Voltage u at input n n The relation is: u (u) v ＝gu m u n G is multiplier M 1 Is a scale factor of (a).
5. The secondary nonlinear active magnetic memory resistance simulator as claimed in claim 1, wherein the operational amplifier U 2 Model number OP07.
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| US9619596B2 (en) * | 2015-06-23 | 2017-04-11 | King Fahd University Of Petroleum And Minerals | Floating memristor emulator |
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| US9299922B1 (en) * | 2015-06-23 | 2016-03-29 | King Fahd University Of Petroleum And Minerals | Continuous-level memristor emulator |
| CN108418674A (en) * | 2018-04-19 | 2018-08-17 | 沈阳建筑大学 | A kind of five dimension chaos circuits containing series connection memristor |
| CN108804840A (en) * | 2018-06-15 | 2018-11-13 | 成都师范学院 | A kind of extremely simple floating ground magnetic control memristor circuit simulation model |
| CN109194321A (en) * | 2018-09-14 | 2019-01-11 | 常州大学 | One kind floating ground magnetic control memristor simulator |
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