CN107103929B - Floating type HP memristor equivalent circuit with bipolar characteristic - Google Patents
Floating type HP memristor equivalent circuit with bipolar characteristic Download PDFInfo
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- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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Abstract
The invention discloses a floating ground type HP memristor equivalent circuit with bipolar characteristics, which comprises an operational amplifier U1, current transmitters U2 and U3, a multiplier U4, resistors R1 and R2 and a capacitor C1, wherein the operational amplifier U2 is connected with the current transmitters U2; wherein the resistanceThe R1, the capacitor C1 and the current transmitter U2 are connected to form an integral circuit; the positive input end of the operational amplifier U1 is connected with an input signal, and the output end is connected with the negative input end to realize voltage following; the multiplier U4 realizes the multiplication of signals; the current conveyor U3 is connected to R2 and the multiplier output to mirror the output current with the input current. The invention realizes HP TiO by using an analog circuit2The volt-ampere characteristic of the memristor is simple in structure, and the conversion of increment memristor and decrement memristor can be realized by changing the connection of the input port of the multiplier, so that the volt-ampere characteristic of the memristor is more consistent with the HP memristor characteristic.
Description
Technical Field
The invention relates to an HP memristor equivalent circuit, in particular to a design of a floating-ground memristor equivalent circuit with a bipolar characteristic.
Background
Memristors are the basic components of an implementation circuit that describe the relationship of charge and magnetic flux. In 1971, the existence of the memristor element is theoretically predicted by the begonia zeyland, and in 2008, the realizability of the memristor is first reported on nature by the smith koff and the like in the HP laboratory. The memristor is a nonlinear resistor with a memory function, can memorize the quantity of charges flowing through the memristor, can change the resistance value of the memristor by controlling the change of current, and can continuously maintain the change when the current is cut off, so that the memristor becomes a natural nonvolatile memory, and the memory characteristics of the memristor have extremely profound influence on computer science, biological engineering, neural networks, electronic engineering, communication engineering and the like.
However, HP TiO2The nanometer technology adopted by the memristor has the defects of difficult realization and high cost, and the memristor is not taken as an actual element to market at present, so that the design of the memristor equivalent circuit and the replacement of the actual memristor by the memristor equivalent circuit for experiments and application research have important significance.
Although a small number of memristor equivalent circuits are reported at present, the structures are complex, the grounding mode is mainly used, the error between the HP memristor equivalent circuits and the HP memristor model is large, the equivalent circuits can only perform equivalence on the increment or decrement characteristic of the HP memristor, the actual memristor characteristic is difficult to accurately simulate, and the application of the equivalent circuits has defects. The invention aims to solve the technical problem of providing a floating type HP memristor equivalent circuit with a simple structure, and the simulation of two characteristics of increment and decrement can be realized by changing the connection mode.
Disclosure of Invention
The main purpose of the invention is to aim at the existing HP TiO2The shortcoming of recalling and hindering equivalent circuit structure provides a superficial ground type HP and recalls and hinders ware equivalent circuit for the volt-ampere characteristic of simulation memory resistance ware has simple structure, and the error of recalling with the HP is little etc. advantage.
The above purpose is realized by the following technical scheme:
the circuit comprises an operational amplifier U1, current conveyors U2 and U3, a multiplier U4, resistors R1 and R2 and a capacitor C1.
The two ends of the resistor R1 are marked as ends A and B, the two ends of the resistor R2 are marked as ends C and D, and the two ends of the capacitor C1 are marked as ends E and F.
The A end is connected with the input end V1, the B end is connected with the Y end of the current conveyor U2, the E end is connected with the Z end of the current conveyor U2, the F end is connected with the ground, and the X end of the current conveyor U2 is connected with the ground to form an integrator.
The X1 terminal of the multiplier U4 is connected with the output W terminal of the current conveyor U2, the Y1 terminal is connected with the input end V1, and the X2 terminal and the Y2 terminal of the multiplier U4 are connected with the ground.
And the positive input X end of the operational amplifier U1 is connected with the input end V1, and the negative input Y end is connected with the output end Z end to form a voltage follower.
The C end is connected with the Z end of the output end of the operational amplifier U1, the D end is connected with the Z end of the current transmitter U3, the X end of the current transmitter U3 is connected with the W end of the output of the multiplier U4, the W end of the output of the current transmitter U3 is connected with the ground, and the Y end of the current transmitter U3 is connected with the input end V2.
The resistances of the resistors R1 and R2 are equal.
Compared with the prior art, the invention has the following advantages:
1. the invention designs an analog equivalent circuit capable of realizing the volt-ampere characteristic of a floating memristor, the analog circuit only comprises one operational amplifier, two current transmitters, one multiplier, two resistors and one capacitor, and the circuit is simple in structure and easy to construct.
2. The current transmitter, a resistor and a capacitor are used for realizing integral operation, the structure is simple, and the integral precision is high.
3. The double port of the circuit is clear, the mathematical concept is clear, and the circuit can be accessed into the circuit to be used in series or in parallel with other elements.
4. The input ports X1 and X2 of the multiplier are changed to realize the conversion of increment memristors and decrement memristors, and the conversion is more consistent with HP memristor characteristics.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the present disclosure taken in conjunction with the accompanying drawings, in which:
fig. 1 is a schematic diagram of the circuit structure of the present invention.
FIG. 2 is a connection schematic of an incremental memristor multiplier.
FIG. 3 is a U-I characteristic curve when sine waves are added to two input ends of the memristive equivalent circuit.
Detailed Description
The invention is further illustrated by the following figures and examples.
The mathematical model of HP TiO2 memristor is as follows:
M(t)＝RONx(t)+ROFF(1-x(t)) (1)
wherein x (t) ═ w (t) ∈ (0,1), and k ═ μ vRON/D2，
M(t)＝ROFF+k(RON-ROFF)q(t) (3)
Thus, the voltage to current relationship of a memristor is
Where x (t) kq (t), where q (t) represents the amount of charge that the current i (t) passes through memristors. Further can obtain
RM(t)＝ROFF[1-kq(t)](5)
The circuit of the invention is designed to realize the operation described in the formula (5) by an analog circuit.
As shown in FIG. 1, the equivalent circuit comprises an operational amplifier U1, current conveyors U2 and U3, a multiplier U4, resistors R1 and R2 and a capacitor C1. The A end of the resistor R1 is connected with the input end V1, the B end is connected with the Y end of the current transmitter U2, the E end of the capacitor C1 is connected with the Z end of the current transmitter U2, the F end is connected with the ground, and the X end of the current transmitter U2 is connected with the ground to form an integrator. The voltages at the X and Y terminals are equal, vX＝vY0; x port current is 0, ix0; the voltage at the Z port is equal to the voltage at the output W, vZ＝vW(ii) a Current equals to that of Y terminal, iZ＝iY＝iin. The current and voltage at the current conveyor U2 port are therefore related as follows:
the X1 terminal of the multiplier U4 is connected with the output W terminal of the current conveyor U2, the Y1 terminal is connected with the input end V1, and the X2 terminal and the Y2 terminal of the multiplier U4 are connected with the ground. So that the multiplier outputs a voltage v4Is composed of
The positive input X end of the operational amplifier U1 is connected with the input end V1 and the negative inputThe Y end is connected with the Z end of the output end to form a voltage follower, the C end of the R2 is connected with the Z end of the output end of the operational amplifier U1, the D end is connected with the Z end of the current transmitter U3, the X end of the current transmitter U3 is connected with the W end of the output of the multiplier U4, the W end of the output of the current transmitter U3 is connected with the ground, and the Y end of the current transmitter U3 is connected with the input end V2. The output voltage v of U15＝v1Since the resistances of the resistors R1 and R2 are equal, the current i of R2 is equal2＝iin(ii) a The port voltage and current for current conveyor U3 have the following relationships:
iY＝i2＝iin(9)
it can be seen that the current flowing into the memristive equivalent circuit and the current flowing out of the memristive equivalent circuit are both iinThe floating property is realized; and the port voltage v (t) of the equivalent circuit is
So that the equivalent circuit has a resistance of
Comparing formula (12) with formula (5), R1 ═ ROFF，
Then the two expressions are consistent, which shows that the equivalent circuit realizes the V-I characteristic of the HP memristor and reduces the memristive characteristic for the HP.
As shown in FIG. 2, the X2 terminal of the multiplier U4 is connected with the output W terminal of the current conveyor U2, the Y1 terminal is connected with the input end V1, the X1 terminal and the Y2 terminal of the multiplier U4 are connected with the ground, and then the output voltage V of the multiplier is output4Is composed of
The port voltage v (t) of the equivalent circuit is
The equivalent circuit resistance becomes
The equivalent circuit realizes the characteristic of HP increment memristor.
FIG. 3 is a V-I characteristic curve diagram obtained by adding sine waves with the amplitude of 2V and the frequencies of 5Hz, 50Hz and 100Hz at two ends of an equivalent circuit, and the curve accords with the electrical characteristics of the memristor.
Advantageous effects
The invention designs an analog equivalent circuit capable of realizing the volt-ampere characteristic of a floating memristor, the analog circuit only comprises one operational amplifier, two current transmitters, one multiplier, two resistors and one capacitor, and the circuit is simple in structure and easy to construct. The integral operation is realized by using the current transmitter, the structure is simple, and the integral precision is high. The circuit has definite double ports and clear mathematical concept, and can be connected into the circuit to be used in series or in parallel with other elements. The input ports X1 and X2 of the multiplier are changed to realize the conversion of increment memristors and decrement memristors, and the conversion is more consistent with HP memristor characteristics.
The above examples are merely illustrative for clearly illustrating the present invention and are not intended to limit the embodiments of the present invention. Variations or modifications in other variations may occur to those skilled in the art based on the foregoing description. And are neither required nor exhaustive of all embodiments.
Claims (1)
1. A floating-earth HP memristor equivalent circuit with bipolar characteristics is characterized by comprising an operational amplifier U1, current transmitters U2 and U3, a multiplier U4, resistors R1 and R2 and a capacitor C1;
two ends of the resistor R1 are marked as an A end and a B end, two ends of the resistor R2 are marked as a C end and a D end, and two ends of the capacitor C1 are marked as an E end and an F end;
the A end of the resistor R1 is connected with the input end V1, the B end is connected with the Y end of the current transmitter U2, the E end of the capacitor C1 is connected with the Z end of the current transmitter U2, the F end is connected with the ground, and the X end of the current transmitter U2 is connected with the ground to form an integrator;
an X1 terminal of the multiplier U4 is connected with the output W terminal of the current conveyor U2, a Y1 terminal of the multiplier U4 is connected with the input end V1, and an X2 terminal and a Y2 terminal of the multiplier U4 are connected with the ground;
the positive input X end of the operational amplifier U1 is connected with the input end V1, and the negative input Y end of the operational amplifier U1 is connected with the output end Z end to form a voltage follower;
the C end of the resistor R2 is connected with the Z end of the output end of the operational amplifier U1, the D end is connected with the Z end of the current transmitter U3, the X end of the current transmitter U3 is connected with the W end of the output of the multiplier U4, the W end of the output of the current transmitter U3 is connected with the ground, and the Y end of the current transmitter U3 is connected with the input end V2.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203193601U (en) * | 2013-04-16 | 2013-09-11 | 杭州电子科技大学 | Analog circuit with characteristic of memristor |
| CN104796248A (en) * | 2015-03-18 | 2015-07-22 | 常州大学 | MCLC type memristive chaotic signal generation device |
| CN105306192A (en) * | 2015-10-14 | 2016-02-03 | 常州大学 | Fourth-order memristor Colpitts chaotic signal generator achieved by coupled first-order generalized memristor |
| US9336870B1 (en) * | 2013-08-16 | 2016-05-10 | Sandia Corporation | Methods for resistive switching of memristors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203193601U (en) * | 2013-04-16 | 2013-09-11 | 杭州电子科技大学 | Analog circuit with characteristic of memristor |
| US9336870B1 (en) * | 2013-08-16 | 2016-05-10 | Sandia Corporation | Methods for resistive switching of memristors |
| CN104796248A (en) * | 2015-03-18 | 2015-07-22 | 常州大学 | MCLC type memristive chaotic signal generation device |
| CN105306192A (en) * | 2015-10-14 | 2016-02-03 | 常州大学 | Fourth-order memristor Colpitts chaotic signal generator achieved by coupled first-order generalized memristor |
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Application publication date: 20170829 Assignee: Changzhou Ruixinteng Microelectronics Co.,Ltd. Assignor: CHANGZHOU University Contract record no.: X2023980047854 Denomination of invention: A floating ground type HP memristor equivalent circuit with bipolar characteristics Granted publication date: 20200526 License type: Common License Record date: 20231123 |
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