CN107122541A - One kind floating ground lotus control HP memristor equivalent circuits - Google Patents
One kind floating ground lotus control HP memristor equivalent circuits Download PDFInfo
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- CN107122541A CN107122541A CN201710278216.8A CN201710278216A CN107122541A CN 107122541 A CN107122541 A CN 107122541A CN 201710278216 A CN201710278216 A CN 201710278216A CN 107122541 A CN107122541 A CN 107122541A
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
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Abstract
The invention discloses one kind floating ground lotus control HP memristor equivalent circuits, circuit includes operational amplifier U1, operational amplifier U2, multiplier U3, current transmission device U4, current transmission device U5And resistance R1、R2、R3、R4、R5With electric capacity C1.Wherein resistance R2、R3With amplifier U1It is connected and constitutes subtraction circuit；Amplifier U2With electric capacity C1With resistance R4It is connected to form integrating circuit；Multiplier U3For realizing multiplying.Current transmission device U4With U5It is connected, realizes the mirror image of electric current.The present invention realizes a kind of C-V characteristic of the floating ground HP memristors of reduced form using analog circuit, and using the less resistance of resistance, its is simple in construction, and accuracy is high, and error is small, it is easy to accomplish；And the conversion of increment memristor and decrement memristor can be realized also by the connected mode for the input port for changing multiplier, also more conformed to HP memristor characteristics.
Description
Technical field
The present invention relates to a kind of HP memristors equivalent circuit, more particularly to a kind of floating ground lotus control HP memristor equivalent circuits are set
Meter.
Background technology
In the various physical systems of nature and human society, generally existing memory effect.Thing with memory effect
Reason device or system can be considered a kind of memristor.Memristor (memristor) is description electric charge (charge) and magnetic flux (magnetic
Flux) the basic element for realizing circuit of relation.
1971, California, USA university professor Cai Shaotang theoretically predicted the existence of memristor element, and proposes
The concept of memristor.2008, HP Lab Shi Tekefu etc. existed《It is natural》On report the realisation of memristor first,
Achievement in research has shocked the International Power electronic technology world.Memristor is a kind of passive device, because its consumed energy is without producing
Raw energy, does not produce power gain, unique memory characteristic can remember the total amount for flowing through electric charge in nonvolatile manner.Recall
Device is hindered except with memory capability, logical operation can also be carried out, so memristor is in artificial intelligence computer and analog neuron
Using more extensive in network, while also will have very far-reaching influence to electronic engineering, communication engineering etc..
At present because HP TiO2The nanometer technology that memristor is used, so there is very big be stranded on implementing and making
Difficulty, and memristor does not also move towards market as the element of a reality at present, therefore a kind of memristor equivalent circuit of design is used in combination
It is that tool is up to much that it, which substitutes actual memristor and carries out experiment and application study,.
Although there are many memristor equivalent circuits to be gradually reported at present, the larger electricity of resistance is mostly employed
Resistance, the accuracy that memristor equivalent circuit can be influenceed to realize, structure is all complex, and many based on Contact patch.The present invention
The technical problem to be solved just is to provide a kind of floating ground type HP memristor equivalent circuits of simplification, and circuit structure is simple, uses
The resistance of smaller resistance, accuracy is high, and is not limited by ground connection, can be applied in numerous practical fields, with Research Significance
With value.
The content of the invention
The main object of the present invention is to be directed to existing HP TiO2The resistance for having used resistance larger in memristor equivalent circuit,
And the accuracy of memristor characteristic can be influenceed there is provided a kind of floating ground lotus control HP memristor equivalent circuits of simplification, by circuit come mould
The C-V characteristic of memristor is drawn up, it has simple in construction, and resistance value is smaller, substantially, error is smaller for memristor characteristic, easily realizes
The advantages of.
Above-mentioned purpose is realized by following technical schemes：
Circuit includes operational amplifier U1, operational amplifier U2, multiplier U3, current transmission device U4, current transmission device U5With
And resistance R1、R2、R3、R4、R5With electric capacity C1。
The resistance R1Two ends be labeled as A and B ends, resistance R2Two ends be labeled as C and D ends, resistance R3Two ends mark
For D and E ends, resistance R4Two ends be labeled as E and F ends, resistance R5Two ends be labeled as G and H ends, electric capacity C1Two ends be labeled as G
With H ends.
The A ends connection input V1, B ends and current transmission device U5The connection of Y ends, C-terminal is connected with multiplier U3 W ends,
Amplifier U1X ends be connected with A ends, amplifier U1Y ends be connected with D ends, amplifier U1Output end Z be connected with E ends, overall structure
Into a subtracter.
The amplifier U2Positive input X ends be connected with A ends, amplifier U2Negative input Y ends be connected with F ends, amplifier U2Output
Hold Z ends and electric capacity C1H ends connection, electric capacity C1G ends and amplifier U2Negative input Y ends connection.
The multiplier U3X1 ends and amplifier U1The connection of positive input X ends, Y1 ends and amplifier U2Output end Z connections,
X2, Y2 and Z end are connected to ground, multiplier U3Output end W ends connection current transmission device U4Positive input terminal X.
The current transmission device U4Z ends and current transmission device U5Z ends connection, U4、U5W ends and U5X ends all with ground
Connection, current transmission device U4Y ends connection input V2。
Resistance R1、R2、R3And R4Resistance it is equal.
The present invention has advantages below compared with prior art：
1st, the present invention devises a kind of floating ground lotus control HP memristor equivalent circuits of simplification, it is not necessary to the larger resistance of resistance,
Circuit structure is simple, is also easy to build, and improves the equivalent accuracy of memristor using small resistor.
2nd, using an amplifier and two resistance, a simple subtraction circuit is constructed, its is simple in construction.Building
During integrating circuit, the larger resistance of a resistance in parallel, improves integral accuracy on electric capacity, while it also avoid voltage drift
Move.
3rd, the realization approach of overall memristor equivalent circuit is more clear, easily realizes, can be real respectively by simple transformation
Existing increment memristor and decrement memristor, are more consistent with HP memristors characteristic.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, below according to specific embodiment and combine attached
Figure, the present invention is further detailed explanation, wherein：
Fig. 1 is electrical block diagram of the present invention.
Fig. 2 is the connection diagram of decrement memristor multiplier.
U-I characteristic curves when Fig. 3 is the input of memristor equivalent circuit two plus sine wave.
Embodiment
The invention will be further described with reference to the accompanying drawings and examples.
Circuit of the present invention is exactly to design a kind of analog circuit to realize HP TiO2Computing described by memristor model.
As shown in figure 1, the equivalent circuit includes amplifier U1, amplifier U2, current transmission device U4And U5, multiplier U3And resistance
R1、R2、R3、R4And R5, electric capacity C1.Amplifier U1X ends connection input V1, amplifier U1Y ends connection resistance R2D ends.According to fortune
The characteristic put, VX=VY=VD=V1.Resistance R2C-terminal connection current transmission device U4X ends, current transmission device U4Y ends connection
Input V2.According to the characteristic of current transmission device, U4X terminal voltages and Y terminal voltages it is equal, so resistance R2The voltage of C-terminal be
V2.Because resistance R2And R3Resistance is equal, so R2And R3On electric current it is equal, i.e. i2=i3.Because U1Output end Z ends connection
R3E ends, so for amplifier U1The voltage of port has following relation：
Resistance R4E ends connection amplifier U1Z ends, F ends and amplifier U2Y ends connection.Because amplifier U2X ends with input
Hold V1It is connected, so the voltage at F ends is equal to V1.So the electric current i on resistance R44=(vZ1–V1)/R4=(V1–V2)/R4.Because
R5、C1With amplifier U2An integrator is constituted, so the voltage v at output end Z endsZ2Relation is expressed as below：
The X1 ends of multiplier and input V1It is connected, Y1 ends and amplifier U2Output end Z connections, X2 ends, Y2 ends and Z ends
All it is grounded, so the output end W of multiplier voltage is expressed as below：
Wherein,It is the magnetic flux through end points 1 and 2.
Current transmission device U4X ends connection multiplier U3Output end W ends, according to the characteristic of current transmission device, so U4's
The voltage at Y ends is equal to the voltage at X ends, and because U3Y ends and input V2Connection, so V2=vW。
Resistance R1A ends connection input V1, B ends connection current transmission device U5Y ends, so input current iin=i1=
V1/R1.Because current transmission device U5 Z ends are connected with current transmission device U4 Z ends, according to the characteristic of current transmission device, electric current is passed
The electric current at defeated device U5 Z ends is equal to the electric current at Y ends, and the electric current at current transmission device U4 Z ends is equal to the electric current of U5 Z ports, institute
To have
iin=iY5=iZ5=iZ4=iY4 (4)
It can be seen that, the electric current and outflow electric current for flowing into the memristor equivalent circuit are all iin, realize floating ground characteristic；And it is equivalent
The port voltage v of circuit is
So the equivalent circuit resistance is
Because HP TiO2The basic model of memristor is
M (t)=ROFF[1-kq(t)] (7)
And the resistance of the equivalent circuit of this invention can be expressed as
Contrast (7) and formula (8), makes R1=ROFF, k=-1/10C1So two expression formulas are consistent, illustrate that this is equivalent
The circuit realiration V-I characteristics of HP memristors, and be the characteristic of HP increment memristors.
It should be strongly noted that the positive and negative of k values can be by the characteristic according to multiplier, connection as shown in Figure 2, can be real
Now negative k values, that is, realize decrement memristor characteristic.
Fig. 3 is that to add amplitude at equivalent circuit two ends be 2V, frequency 20Hz sine wave, obtained V-I performance diagrams,
Meet the electrical characteristic of memristor.
The present invention devises a kind of floating ground HP memristor simulating equivalent circuits of reduced form, and the analog circuit is only containing two fortune
Put, two current transmission devices, a multiplier and five resistance, an electric capacity.Circuit uses small resistor, it is easy to accomplish, knot
Structure is simple, it is to avoid using resistance resistance bigger than normal, improve the accuracy of memristor characteristic.Simultaneously by using an amplifier and
Two resistance realize subtraction, simple in construction, and integral accuracy is high.The circuit design clear thinking, changes multiplier simultaneously
The connected mode of input port can realize the conversion of increment memristor and decrement memristor, also be more conformed to HP memristor characteristics.
Above-described embodiment is only intended to clearly illustrate example of the present invention, and is not the embodiment party to the present invention
The restriction of formula.For others skilled in the art, other differences can also be made on the basis of the above description
The variation or improvement of form.There is no necessity and possibility to exhaust all the enbodiments.
Claims (3)
1. one kind floating ground lotus control HP memristor equivalent circuits, it is characterised in that：Circuit includes operational amplifier U1, operational amplifier U2、
Multiplier U3, current transmission device U4, current transmission device U5And resistance R1、R2、R3、R4、R5With electric capacity C1。
2. a kind of reduced form according to claim 1 floating ground HP memristor equivalent circuits, it is characterised in that resistance R1Two
End is labeled as A and B ends, resistance R2Two ends be labeled as C and D ends, resistance R3Two ends be labeled as D and E ends, resistance R4Two ends
It is labeled as E and F ends, resistance R5With electric capacity C1Two ends be all labeled as G and H ends.
3. a kind of reduced form according to claim 1 or 2 floating ground HP memristor equivalent circuits, the A ends connection input V1, B
End and current transmission device U5The connection of Y ends, C-terminal is connected with multiplier U3 W ends, amplifier U1X ends be connected with A ends, amplifier U1
Y ends be connected with D ends, amplifier U1Output end Z be connected with E ends, be monolithically fabricated a subtracter.The amplifier U2It is just defeated
Enter X ends to be connected with A ends, amplifier U2Negative input Y ends be connected with F ends, amplifier U2Output end Z ends and electric capacity C1H ends connection,
Electric capacity C1G ends and amplifier U2Negative input Y ends connection.The multiplier U3X1 ends and amplifier U1Positive input X ends connection,
Y1 ends and amplifier U2Output end Z connections, X2, Y2 and Z end is connected to ground, multiplier U3Output end W ends connection current transmission device
U4Positive input terminal X.The current transmission device U4Z ends and current transmission device U5Z ends connection, U4、U5W ends and U5X ends
All it is connected to ground, current transmission device U4Y ends connection input V2。
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| CN201710278216.8A CN107122541A (en) | 2017-04-25 | 2017-04-25 | One kind floating ground lotus control HP memristor equivalent circuits |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993686A (en) * | 2018-01-12 | 2018-05-04 | 深圳璞芯智能科技有限公司 | A kind of floatingly voltage-controlled memristor equivalence element |
| CN108365948A (en) * | 2018-03-30 | 2018-08-03 | 湘潭大学 | The memristor type hyperchaotic circuit of arbitrary even number and odd number scrollwork attractor can be generated |
| CN108846215A (en) * | 2018-06-21 | 2018-11-20 | 成都师范学院 | A kind of extremely simple floating ground lotus control memristor circuit simulation model |
| CN108875204A (en) * | 2018-06-15 | 2018-11-23 | 成都师范学院 | Sensor circuit simulation model is recalled in a kind of extremely simple floating ground lotus control |
| CN109344467A (en) * | 2018-09-14 | 2019-02-15 | 常州大学 | A kind of extremely letter floating ground HP memristor equivalent circuit |
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| CN106130713A (en) * | 2016-07-14 | 2016-11-16 | 郑州轻工业学院 | A kind of the simplest four-dimensional self-governing chaos system with double memristor and realize circuit |
| US9619596B2 (en) * | 2015-06-23 | 2017-04-11 | King Fahd University Of Petroleum And Minerals | Floating memristor emulator |
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| US9619596B2 (en) * | 2015-06-23 | 2017-04-11 | King Fahd University Of Petroleum And Minerals | Floating memristor emulator |
| CN106130713A (en) * | 2016-07-14 | 2016-11-16 | 郑州轻工业学院 | A kind of the simplest four-dimensional self-governing chaos system with double memristor and realize circuit |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993686A (en) * | 2018-01-12 | 2018-05-04 | 深圳璞芯智能科技有限公司 | A kind of floatingly voltage-controlled memristor equivalence element |
| CN107993686B (en) * | 2018-01-12 | 2020-09-01 | 深圳璞芯智能科技有限公司 | Floating ground voltage control memristor equivalent element |
| CN108365948A (en) * | 2018-03-30 | 2018-08-03 | 湘潭大学 | The memristor type hyperchaotic circuit of arbitrary even number and odd number scrollwork attractor can be generated |
| CN108365948B (en) * | 2018-03-30 | 2020-12-08 | 湘潭大学 | Memristive hyperchaotic circuit capable of generating scroll attractor |
| CN108875204A (en) * | 2018-06-15 | 2018-11-23 | 成都师范学院 | Sensor circuit simulation model is recalled in a kind of extremely simple floating ground lotus control |
| CN108875204B (en) * | 2018-06-15 | 2022-04-26 | 成都师范学院 | Extremely simple floating ground load control memory sensor circuit simulation model |
| CN108846215A (en) * | 2018-06-21 | 2018-11-20 | 成都师范学院 | A kind of extremely simple floating ground lotus control memristor circuit simulation model |
| CN108846215B (en) * | 2018-06-21 | 2022-04-26 | 成都师范学院 | Extremely simple floating ground load control memristor circuit simulation model |
| CN109344467A (en) * | 2018-09-14 | 2019-02-15 | 常州大学 | A kind of extremely letter floating ground HP memristor equivalent circuit |
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