CN107122541A - One kind floating ground lotus control HP memristor equivalent circuits - Google Patents
One kind floating ground lotus control HP memristor equivalent circuits Download PDFInfo
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Abstract
The invention discloses one kind floating ground lotus control HP memristor equivalent circuits, circuit includes operational amplifier U1, operational amplifier U2, multiplier U3, current transmission device U4, current transmission device U5And resistance R1、R2、R3、R4、R5With electric capacity C1.Wherein resistance R2、R3With amplifier U1It is connected and constitutes subtraction circuit；Amplifier U2With electric capacity C1With resistance R4It is connected to form integrating circuit；Multiplier U3For realizing multiplying.Current transmission device U4With U5It is connected, realizes the mirror image of electric current.The present invention realizes a kind of C-V characteristic of the floating ground HP memristors of reduced form using analog circuit, and using the less resistance of resistance, its is simple in construction, and accuracy is high, and error is small, it is easy to accomplish；And the conversion of increment memristor and decrement memristor can be realized also by the connected mode for the input port for changing multiplier, also more conformed to HP memristor characteristics.
Description
Technical Field
The invention relates to an HP memristor equivalent circuit, in particular to a design of a floating ground load control HP memristor equivalent circuit.
Background
Memory effects are ubiquitous in a variety of physical systems in nature and human society. A physical device or system with a memory effect can be considered a memristor. Memristors are the basic constituent elements of an implementation circuit that describe the relationship of charge and magnetic flux.
In 1971, professor zeia begonia, university of california, usa, theoretically predicted the presence of memristive elements and proposed the concept of memristors. In 2008, the realization of the memristor is reported for the first time by Stakoff and the like in Nature in Hewlett packard laboratories, and the research result warns the world of international electrotechnical and electronic technology. Memristors are passive devices in that they consume energy without producing energy, do not produce power gains, and have unique memory characteristics that enable them to memorize the total amount of charge flowing through in a non-volatile manner. The memristor not only has memory capacity, but also can perform logic operation, so the memristor is more widely applied to artificial intelligence computers and simulated neural networks, and has a profound influence on electronic engineering, communication engineering and the like.
At present because of HP TiO2The nano technology adopted by the memristor has great difficulty in specific realization and manufacturing, and the memristor is not taken as an actual element to market at present, so that the design of the memristor equivalent circuit and the replacement of the actual memristor by the memristor equivalent circuit for experiment and application research have great value.
Although a plurality of memristor equivalent circuits are gradually reported at present, resistors with larger resistance values are mostly adopted, the realization accuracy of the memristor equivalent circuits is influenced, the structures are more complex, and the grounding mode is mainly adopted. The invention aims to solve the technical problem of providing a simplified equivalent circuit of a floating type HP memristor, which has the advantages of simple circuit structure, use of a resistor with a smaller resistance value, high accuracy, no limitation of grounding, applicability to numerous practical fields and research significance and value.
Disclosure of Invention
The main purpose of the invention is to aim at the existing HP TiO2The simplified floating ground charge control HP memristor equivalent circuit is provided, the volt-ampere characteristic of the memristor is simulated through the circuit, and the simplified floating ground charge control HP memristor equivalent circuit has the advantages of simple structure, small resistance value, obvious memristor characteristic, small error, easiness in implementation and the like.
The above purpose is realized by the following technical scheme:
the circuit comprises an operational amplifier U1Operational amplifier U2Multiplier U3Current transmitter U4Current transmitter U5And a resistance R1、R2、R3、R4、R5And a capacitor C1。
The resistor R1Are marked as ends A and B, resistor R2Are marked as C and D terminals, resistor R3Are marked as D and E, resistor R4Are marked as ends E and F, resistor R5Are marked as ends G and H, capacitor C1Are labeled as the G and H ends.
The A end is connected with the input end V1Terminal B and current transmitter U5Is connected with the Y end, the C end is connected with the W end of the multiplier U3, and the operational amplifier U1The X end is connected with the A end, and the operational amplifier U1The Y end is connected with the D end, and the operational amplifier U1The output end Z is connected with the end E, and the whole body forms a subtracter.
The operational amplifier U2The positive input X end is connected with the A end, and the operational amplifier U2The negative input Y end is connected with the F end, and the operational amplifier U2Output terminal Z and capacitor C1Is connected to the H terminal of the capacitor C1G terminal and operational amplifier U2The negative input Y end of the capacitor is connected.
The multiplier U3X1 end and operational amplifier U1Is connected with the positive input X end and is connected with the Y1 endAnd operational amplifier U2Is connected to ground, X2, Y2 and Z terminals are connected to a multiplier U3The W end of the output end of the power supply is connected with a current transmitter U4Positive input terminal X.
The current transmitter U4Z terminal and current transmitter U5Z terminal of (1) is connected with U4、U5W terminal and U of5Are all connected with the ground, a current transmitter U4Y end of the input terminal V is connected with2。
Resistance R1、R2、R3And R4Are equal.
Compared with the prior art, the invention has the following advantages:
1. the simplified floating ground charge control HP memristor equivalent circuit is designed, a resistor with a larger resistance value is not needed, the circuit structure is simple, the construction is easy, and the accuracy of memristor equivalent is improved by using a small resistor.
2. A simple subtracter circuit is constructed by using an operational amplifier and two resistors, and the structure is simple. When an integrating circuit is constructed, a resistor with larger resistance value is connected in parallel to a capacitor, so that the integrating precision is improved, and the voltage drift is avoided.
3. The realization idea of the whole memristor equivalent circuit is clear and easy to realize, increment memristor and decrement memristor can be respectively realized through simple transformation, and the characteristics of the increment memristor the decrement memristor are more consistent with the characteristics of the HP memristor.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the invention taken in conjunction with the accompanying drawings, in which:
fig. 1 is a schematic diagram of the circuit structure of the present invention.
FIG. 2 is a connection schematic of a decrement memristor multiplier.
FIG. 3 is a U-I characteristic curve when sine waves are added to two input ends of the memristive equivalent circuit.
Detailed Description
The invention is further illustrated by the following figures and examples.
The invention designs an analog circuit to realize HP TiO2The operation described by the memristive model.
As shown in FIG. 1, the equivalent circuit includes an operational amplifier U1Operational amplifier U2Current transmitter U4And U5Multiplier U3And a resistance R1、R2、R3、R4And R5Capacitor C1. Operational amplifier U1X end of the first capacitor is connected with an input end V1Operational amplifier U1Y end of the resistor R2The D terminal of (1). According to the characteristics of operational amplifiers, VX＝VY＝VD＝V1. Resistance R2C end of the current transmitter U4X terminal of (1), current transmitter U4Y end of the input terminal V is connected with2. According to the characteristics of the current conveyor, U4Is equal to the voltage at the X terminal and the voltage at the Y terminal, so that the resistor R is connected to the power supply2Has a voltage of V at the C terminal2. Because of the resistance R2And R3Equal in resistance value, so R2And R3Are equal in current i2＝i3. Because of U1Output terminal Z end of the transformer is connected with R3E terminal of, so for the operational amplifier U1The voltage at the port has the following relationship:
resistance R4The E end is connected with the operational amplifier U1Z end, F end and operational amplifier U2Is connected with the Y end of the terminal. Because the operational amplifier U2X terminal and input terminal V of1Connected so that the voltage at the F terminal is equal to V1. So the current i on the resistor R44＝(vZ1–V1)/R4＝(V1–V2)/R4. Because R is5、C1Operational amplifier U2An integrator is formed so that the voltage v at the output terminal ZZ2The relationship is expressed as follows:
x1 terminal and input terminal V of multiplier1Connected with the Y1 end and the operational amplifier U2Is connected to the output terminal Z, and the terminals X2, Y2 and Z are all grounded, so the voltage at the output terminal W of the multiplier is as follows:
wherein,is the magnetic flux passing through the terminals 1 and 2.
Current transmitter U4Is connected with a multiplier U3According to the characteristics of the current conveyor, so that U4The voltage at the Y terminal is equal to the voltage at the X terminal, because of U3Y terminal and input terminal V2Is connected so as to V2＝vW。
Resistance R1End A of the input terminal V is connected with the input terminal1And the B end is connected with a current transmitter U5Terminal Y of so that the current i is inputin＝i1＝V1/R1. Since the Z terminal of the current conveyor U5 is connected with the Z terminal of the current conveyor U4, the current at the Z terminal of the current conveyor U5 is equal to the current at the Y terminal, and the current at the Z terminal of the current conveyor U4 is equal to the current at the Z port of U5 according to the characteristics of the current conveyors, so that
iin＝iY5＝iZ5＝iZ4＝iY4(4)
It can be seen that the current flowing into the memristive equivalent circuit and the current flowing out of the memristive equivalent circuit are both iinThe floating property is realized; and the port voltage v of the equivalent circuit is
So that the equivalent circuit has a resistance of
Since HP TiO2The basic model of memristor is
M(t)＝ROFF[1-kq(t)](7)
The resistance of the equivalent circuit of the present invention can be expressed as
Comparing formula (7) with formula (8), let R1＝ROFF，k＝–1/10C1Then the two expressions are identical, demonstrating that the equivalent circuit achieves the V-I characteristics of the HP memristor, and is characteristic of the HP delta memristor.
In particular, the positive and negative values of k can be realized by the multiplier characteristics, such as the connection shown in fig. 2, so that a negative k value, i.e., a reduced memristive characteristic can be realized.
FIG. 3 is a V-I characteristic curve diagram obtained by adding sine waves with the amplitude of 2V and the frequency of 20Hz to two ends of an equivalent circuit, and the curve accords with the electrical characteristics of the memristor.
The invention designs a simplified floating-ground HP memristor analog equivalent circuit which only comprises two operational amplifiers, two current transmitters, a multiplier, five resistors and a capacitor. The circuit adopts the small resistor, easily realizes, and simple structure avoids using the resistance that the resistance is bigger than normal, has improved the accuracy of recalling the resistance characteristic. Meanwhile, subtraction operation is realized by using one operational amplifier and two resistors, the structure is simple, and the integration precision is high. Meanwhile, the circuit is clear in design thought, the conversion of increment memristor and decrement memristor can be realized by changing the connection mode of the input port of the multiplier, and the circuit is more consistent with the HP memristor characteristic.
The above examples are merely illustrative for clearly illustrating the present invention and are not intended to limit the embodiments of the present invention. Variations or modifications in other variations may occur to those skilled in the art based on the foregoing description. And are neither required nor exhaustive of all embodiments.
Claims (3)
1. The utility model provides a float ground load-control HP memristor equivalent circuit which characterized in that: the circuit comprises an operational amplifier U1Operational amplifier U2Multiplier U3Current transmitter U4Current transmitter U5And a resistance R1、R2、R3、R4、R5And a capacitor C1。
2. The simplified floating-ground HP memristor equivalent circuit according to claim 1, wherein the resistance R is1Are marked as ends A and B, resistor R2Are marked as C and D terminals, resistor R3Are marked as D and E, resistor R4Are marked as ends E and F, resistor R5And a capacitor C1Are labeled as the G and H terminals.
3. The simplified floating-ground HP memristor equivalent circuit according to claim 1 or 2, wherein the A terminal is connected with the input end V1Terminal B and current transmitter U5Is connected with the Y end, the C end is connected with the W end of the multiplier U3, and the operational amplifier U1The X end is connected with the A end, and the operational amplifier U1The Y end is connected with the D end, and the operational amplifier U1The output end Z is connected with the end E, and the whole body forms a subtracter. The operational amplifier U2The positive input X end is connected with the A end, and the operational amplifier U2The negative input Y end is connected with the F end, and the operational amplifier U2Output terminal Z and capacitor C1Is connected to the H terminal of the capacitor C1G terminal and operational amplifier U2The negative input Y end of the capacitor is connected. The multiplier U3X1 end and operational amplifier U1Is connected with the positive input X end, and the Y1 end is connected with the operational amplifier U2Is connected to ground, X2, Y2 and Z terminals are connected to a multiplier U3The W end of the output end of the power supply is connected with a current transmitter U4Positive input terminal X. The current transmitter U4Z terminal and current transmitter U5Z terminal of (1) is connected with U4、U5W terminal and U of5Are all connected with the ground, a current transmitter U4Y end of the input terminal V is connected with2。
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993686A (en) * | 2018-01-12 | 2018-05-04 | 深圳璞芯智能科技有限公司 | A kind of floatingly voltage-controlled memristor equivalence element |
| CN108365948A (en) * | 2018-03-30 | 2018-08-03 | 湘潭大学 | The memristor type hyperchaotic circuit of arbitrary even number and odd number scrollwork attractor can be generated |
| CN108846215A (en) * | 2018-06-21 | 2018-11-20 | 成都师范学院 | A kind of extremely simple floating ground lotus control memristor circuit simulation model |
| CN108875204A (en) * | 2018-06-15 | 2018-11-23 | 成都师范学院 | Sensor circuit simulation model is recalled in a kind of extremely simple floating ground lotus control |
| CN109344467A (en) * | 2018-09-14 | 2019-02-15 | 常州大学 | A kind of extremely letter floating ground HP memristor equivalent circuit |
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| US9619596B2 (en) * | 2015-06-23 | 2017-04-11 | King Fahd University Of Petroleum And Minerals | Floating memristor emulator |
| CN106130713A (en) * | 2016-07-14 | 2016-11-16 | 郑州轻工业学院 | A kind of the simplest four-dimensional self-governing chaos system with double memristor and realize circuit |
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| 李志军等: "一个通用的记忆器件模拟器", 《物理学报》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993686A (en) * | 2018-01-12 | 2018-05-04 | 深圳璞芯智能科技有限公司 | A kind of floatingly voltage-controlled memristor equivalence element |
| CN107993686B (en) * | 2018-01-12 | 2020-09-01 | 深圳璞芯智能科技有限公司 | Floating ground voltage control memristor equivalent element |
| CN108365948A (en) * | 2018-03-30 | 2018-08-03 | 湘潭大学 | The memristor type hyperchaotic circuit of arbitrary even number and odd number scrollwork attractor can be generated |
| CN108365948B (en) * | 2018-03-30 | 2020-12-08 | 湘潭大学 | Memristive hyperchaotic circuit capable of generating scroll attractor |
| CN108875204A (en) * | 2018-06-15 | 2018-11-23 | 成都师范学院 | Sensor circuit simulation model is recalled in a kind of extremely simple floating ground lotus control |
| CN108875204B (en) * | 2018-06-15 | 2022-04-26 | 成都师范学院 | Extremely simple floating ground load control memory sensor circuit simulation model |
| CN108846215A (en) * | 2018-06-21 | 2018-11-20 | 成都师范学院 | A kind of extremely simple floating ground lotus control memristor circuit simulation model |
| CN108846215B (en) * | 2018-06-21 | 2022-04-26 | 成都师范学院 | Extremely simple floating ground load control memristor circuit simulation model |
| CN109344467A (en) * | 2018-09-14 | 2019-02-15 | 常州大学 | A kind of extremely letter floating ground HP memristor equivalent circuit |
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