CN107124260A - A kind of Second-order Non-autonomous Chaotic Circuit based on active diode bridge memristor - Google Patents
A kind of Second-order Non-autonomous Chaotic Circuit based on active diode bridge memristor Download PDFInfo
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Abstract
本发明公开了一种基于有源二极管桥忆阻的二阶非自治混沌电路。该电路由交流电压信号源AC、运算放大器U、电阻R、电容C1和一阶有源广义忆阻GM构成。实现了一个简易、可靠且电路拓扑结构简单的混沌信号发生器。该信号发生器产生的混沌信号可作为一种随机信号应用于混沌保密通信、混沌信号同步以及人工噪声等。
The invention discloses a second-order non-autonomous chaotic circuit based on active diode bridge memristor. The circuit is composed of an AC voltage signal source AC, an operational amplifier U, a resistor R, a capacitor C1 and a first-order active generalized memristor G M. A simple, reliable chaotic signal generator with simple circuit topology is realized. The chaotic signal generated by the signal generator can be used as a random signal in chaotic secure communication, chaotic signal synchronization and artificial noise.
Description
技术领域technical field
本发明涉及一种混沌信号发生器,实现一种简易可靠的二阶非自治混沌信号源。The invention relates to a chaotic signal generator, which realizes a simple and reliable second-order non-autonomous chaotic signal source.
背景技术Background technique
忆阻器是华裔科学家蔡少棠于上世纪七十年代提出的一个新概念,是除电感器、电容器和电阻器之外的第四种基本元器件。忆阻器的显著特点是具有记忆性和非线性,能够模拟类似神经元的行为,是模拟人脑最理想的物理器件。2008年惠普公司实验室首次制成纳米级TiO2器件,使国际电工电子技术届一片震惊,随后几年关于忆阻及其相关应用的报道呈井喷式增长。忆阻混沌电路便是其中的一个应用分支,引入忆阻之后的混沌电路比常规非线性电路具有更复杂的动力学行为。寻找拓扑结构更加简单且元件数量更少的混沌电路,形成具有显著特点与优点、可靠实用的电子电路,可以丰富混沌信号发生器在工程中的应用。Memristor is a new concept proposed by Chinese scientist Cai Shaotang in the 1970s. It is the fourth basic component besides inductors, capacitors and resistors. The salient features of memristors are memory and nonlinearity, which can simulate neuron-like behavior, and are the most ideal physical devices for simulating the human brain. In 2008, Hewlett-Packard's laboratory made nano-scale TiO 2 devices for the first time, which shocked the international electrotechnical and electronic technology circles. In the following years, reports on memristor and its related applications showed a blowout growth. Memristor chaotic circuit is one of the application branches. After the introduction of memristor, the chaotic circuit has more complex dynamic behavior than the conventional nonlinear circuit. Finding a chaotic circuit with a simpler topology and fewer components to form a reliable and practical electronic circuit with significant features and advantages can enrich the application of chaotic signal generators in engineering.
发明内容Contents of the invention
本发明所要解决的技术问题实现一种有源二阶忆阻混沌信号发生器。The technical problem to be solved by the present invention is to realize an active second-order memristive chaotic signal generator.
为解决上述技术问题,本发明提供了一种基于有源二极管桥忆阻的二阶非自治混沌电路,其结构如下:In order to solve the above technical problems, the invention provides a second-order non-autonomous chaotic circuit based on active diode bridge memristor, its structure is as follows:
所述主电路如图2所示,包括:标准正弦电压信号源AC,运算放大器U,电阻R,电容C1,和一阶有源广义忆阻GM;信号源AC的正极端接运算放大器U的同相输入端,AC的负极端接“地”;U的反相输入端和输出端相连,此时U构成一个电压跟随器(又称作缓冲器);电阻R的左端连接U的输出端,R的右端连接电容C1的正极端,C1的负极端接“地”;广义忆阻GM的正极端连接电容C1的正极端,GM的负极端接“地”;The main circuit is shown in Figure 2, including: a standard sinusoidal voltage signal source AC, an operational amplifier U, a resistor R, a capacitor C 1 , and a first-order active generalized memristor G M ; the positive terminal of the signal source AC is connected to the operational amplifier The non-inverting input terminal of U, the negative terminal of AC is connected to "ground"; the inverting input terminal of U is connected to the output terminal, at this time U forms a voltage follower (also called a buffer); the left end of the resistor R is connected to the output of U terminal, the right end of R is connected to the positive terminal of capacitor C1 , and the negative terminal of C1 is connected to "ground"; the positive terminal of generalized memristor G M is connected to the positive terminal of capacitor C1 , and the negative terminal of G M is connected to "ground";
一阶广义忆阻GM的实现电路如图1所示,包括:电阻Ra、Rb、RM、R0,二极管D1、D2、D3、D4,电感L,和运算放大器UM。记广义忆阻GM输入端为“1”,输出端为“2”。“1”端连接运算放大器UM的同相输入端,UM的同相输入端和输出端之间跨接电阻Ra,UM的反相输入端和输出端之间跨接电阻Rb,电阻RM的上端连接UM的反相输入端,RM的下端连接“2”端。二极管D1的正极与D4的负极相连记作a端,a端接广义忆阻输入端“1”;二极管D1的负极与D2的负极相连记作b端;二极管D2的正极与D3的负极相连记作c端,c端接广义忆阻输出端“2”;二极管D3的正极与D4的正极相连记作d端;d端串联电感L和电阻R0后接b端。The realization circuit of the first-order generalized memristor G M is shown in Figure 1, including: resistors R a , R b , R M , R 0 , diodes D 1 , D 2 , D 3 , D 4 , inductor L, and operational amplifier U M . Note that the input end of the generalized memristor G M is "1", and the output end is "2". The "1" terminal is connected to the non-inverting input terminal of the operational amplifier U M , the resistor R a is connected between the non-inverting input terminal and the output terminal of U M , the resistor R b is connected between the inverting input terminal and the output terminal of U M , and the resistor The upper end of R M is connected to the inverting input end of U M , and the lower end of R M is connected to the "2" end. The anode of diode D1 is connected to the cathode of D4, which is referred to as terminal a, and terminal a is connected to the generalized memristor input terminal " 1 "; the cathode of diode D1 is connected to the cathode of D2, which is referred to as terminal b ; the anode of diode D2 is connected to The negative pole of D 3 is connected to terminal c, and terminal c is connected to the generalized memristor output terminal "2"; the positive pole of diode D 3 is connected to the positive pole of D 4 , which is denoted as terminal d; terminal d is connected in series with inductor L and resistor R 0 and then connected to b end.
本发明的有益效果如下:The beneficial effects of the present invention are as follows:
本发明的一种基于有源二极管桥忆阻的二阶非自治混沌电路,其结构及其简单且,能产生复杂的非线性现象,可作为一种新型混沌信号源。The second-order non-autonomous chaotic circuit based on the active diode bridge memristor of the present invention has an extremely simple structure and can generate complex nonlinear phenomena, and can be used as a new chaotic signal source.
附图说明Description of drawings
为了使本发明的内容更容易被清楚的理解,下面根据具体实施方案并结合附图,对本发明作进一步详细的说明,其中In order to make the content of the present invention easier to understand clearly, the present invention will be further described in detail below according to specific embodiments in conjunction with the accompanying drawings, wherein
图1忆阻符号及一阶有源广义忆阻等效电路;Fig. 1 Memristor symbol and first-order active generalized memristor equivalent circuit;
图2一种基于有源二极管桥忆阻的二阶非自治混沌电路;Figure 2 A second-order non-autonomous chaotic circuit based on active diode bridge memristor;
图3状态变量x-y平面数值仿真相轨图;Fig. 3 state variable x-y plane numerical simulation phase track diagram;
图4状态变量v1(t)-iL(t)平面实验相轨图;Fig. 4 state variable v 1 (t)-i L (t) plane experiment phase orbit diagram;
具体实施方式detailed description
数学建模:本发明采用一阶有源广义忆阻器,其等效实现电路如图1所示。令一阶有源广义忆阻GM的输入端电压和电流分别为v和i,流过忆阻内部动态元件电感L的电流为iL,该忆阻的数学模型可描述为Mathematical modeling: the present invention adopts a first-order active generalized memristor, and its equivalent realization circuit is shown in Fig. 1 . Let the input terminal voltage and current of the first-order active generalized memristor G M be v and i respectively, and the current flowing through the inductance L of the internal dynamic element of the memristor be i L , the mathematical model of the memristor can be described as
其中,ρ=1/(2nVT),IS、n和VT分别代表二极管的反向饱和电流,发射系数和截止电压,IS=5.84nA,n=1.94,VT=25mV。Among them, ρ=1/(2nV T ), I S , n and V T represent the reverse saturation current, emission coefficient and cut-off voltage of the diode respectively, I S =5.84nA, n=1.94, V T =25mV.
采用式(1)描述的一阶广义忆阻构建二阶非自治混沌电路,如图2所示。其动力学模型可通过电容C1的电压v1和流过忆阻内部动态元件电感L的电流iL表示为The first-order generalized memristor described by formula (1) is used to construct the second-order non-autonomous chaotic circuit, as shown in Figure 2. Its dynamic model can be expressed as
其中,vs=Asin(2πft)为正弦电压信号,A=2V,f=6kHz。Wherein, v s =Asin(2πft) is a sinusoidal voltage signal, A=2V, f=6kHz.
对式(2)作如下尺度变换Do the following scale transformation for formula (2):
式(2)的无量纲方程可写为The dimensionless equation of formula (2) can be written as
数值仿真:根据图2所示一种基于有源二极管桥忆阻的二阶非自治混沌电路,利用MATLAB仿真软件平台,可以对由式(4)所描述的系统进行数值仿真分析。选择龙格-库塔(ODE)算法对系统方程求解。选择典型电路参数C1=20nF、R=2kΩ、Ra=Rb=2kΩ、RM=1kΩ、R0=50Ω、L=100mH、A=2V、f=6kHz。代入式(3)作尺度变换后的参数,可获得此混沌电路状态变量x(t)-y(t)平面的MATLAB数值仿真相轨图,如图3所示。Numerical simulation: According to a second-order non-autonomous chaotic circuit based on active diode bridge memristor shown in Figure 2, using the MATLAB simulation software platform, the numerical simulation analysis of the system described by formula (4) can be carried out. The Runge-Kutta (ODE) algorithm was chosen to solve the system of equations. Select typical circuit parameters C 1 =20nF, R=2kΩ, R a =R b =2kΩ, R M =1kΩ, R 0 =50Ω, L=100mH, A=2V, f=6kHz. Substituting the scale-transformed parameters into formula (3), the MATLAB numerical simulation phase trajectory diagram of the chaotic circuit state variable x(t)-y(t) plane can be obtained, as shown in Figure 3.
实验验证:选择型号为AD711KN的运算放大器,并提供±15V直流工作电压,二极管型号为1N4148,电容为独石电容,电阻为精密可调电阻,电感为手工绕制。制作实验电路,使用型号为Tektronix AFG 3102C的数字信号源提供标准正弦电压信号,通过型号为Tektronix TDS 3034C的数字示波器验证典型参数下电路状态变量在v1(t)-iL(t)平面的相轨图如图4所示。对比可以发现,图3和图4基本一致,该结果进一步证实了一种基于有源二极管桥忆阻的二阶非自治混沌电路可产生混沌现象分析的正确性。Experimental verification: select the AD711KN operational amplifier and provide ±15V DC operating voltage, the diode model is 1N4148, the capacitor is a monolithic capacitor, the resistor is a precision adjustable resistor, and the inductor is hand-wound. Make an experimental circuit, use the digital signal source of the model Tektronix AFG 3102C to provide a standard sinusoidal voltage signal, and use the digital oscilloscope of the model Tektronix TDS 3034C to verify the circuit state variables in the v 1 (t)-i L (t) plane under typical parameters The phase track diagram is shown in Figure 4. By comparison, it can be found that Figure 3 and Figure 4 are basically consistent, and this result further confirms the correctness of the analysis of the chaotic phenomenon that can be generated by a second-order non-autonomous chaotic circuit based on active diode bridge memristor.
本发明实现的一种基于有源二极管桥忆阻的二阶非自治混沌电路,其结构简单,可作为一类简易可行的新型混沌信号产生电路。相信此发明对于混沌系统的发展将会有着较大的推进作用。A second-order non-autonomous chaotic circuit based on the active diode bridge memristor realized by the invention has a simple structure and can be used as a simple and feasible new chaotic signal generating circuit. It is believed that this invention will greatly promote the development of chaotic systems.
上述实施例仅仅是为清楚地说明本发明所作的举例,而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。The above-mentioned embodiments are only examples for clearly illustrating the present invention, rather than limiting the implementation of the present invention. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here.
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