CN106911463A - A kind of Cai Shi memristor chaos circuits based on active band-pass filter - Google Patents
A kind of Cai Shi memristor chaos circuits based on active band-pass filter Download PDFInfo
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- CN106911463A CN106911463A CN201710040923.3A CN201710040923A CN106911463A CN 106911463 A CN106911463 A CN 106911463A CN 201710040923 A CN201710040923 A CN 201710040923A CN 106911463 A CN106911463 A CN 106911463A
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Abstract
The invention discloses a kind of Cai Shi memristor chaos circuits based on active band-pass filter, including electric capacity C1, negative resistance, active band-pass filter, FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor GM；The device is based on the topological structure of cai's circuit, and resistance, wherein electric capacity C are replaced with broad sense memristor simulator1Positive terminal is connected with the output end of broad sense memristor, electric capacity C2Negative pole end is connected with the input of broad sense memristor；The circuit is a kind of new noninductive memristor chaos circuit, and circuit topological structure is simple, it is easy to physics realization, has larger meaning in the application of information engineering field for chaos circuit.
Description
Technical field
The present invention proposes a kind of Cai Shi memristor chaos signal generators based on active band-pass filter, and the device is based on Cai
Family name's circuit topological structure, resistance is replaced with broad sense memristor simulator, is realized a kind of new noninductive memristor chaotic signal and is filled
Put.
Background technology
Memristor (memristor) is a kind of non-linear element for having a memory function, University of California's Berkeley point in 1971
Professor Cai Shaotang in school has foretold the presence of memristor；The concept of memristor proposed first, and to memristor in follow-up article
The performance of device and application are made that further elucidated above, and the memristor with memory function is counted as except resistance, inductance, electric capacity
Outside the 4th kind of basic circuit component.2008, Stan Willams team of HP Lab of the U.S. successfully developed
One memristor.Its achievement in research shocks academia, is that the further raising of store function in electronic technology provides the foundation.
Although it is with physical realizability, but because of technology that memristor has been found to as the 4th kind of new circuit element
Bottleneck causes memristor quickly to circulate commercialization, and researcher cannot efficiently obtain the device from market.Therefore utilize
The memristor analog circuit that the discrete components such as resistance, electric capacity, inductance, operational amplifier are realized, or based on special topological structure structure
Part some broad sense memristor circuits, and set up by converter in memristor equivalent circuit technology and various recall sense and recall appearance equivalent circuit
Deng being all that further development is made that positive contribution for memristor or memristor system.
Because memristor has nonlinear characteristic, chaotic oscillation is easily achieved in circuit, therefore based on memristor construction
Chaos circuit receives the concern of researcher.Based on this, this patent replaces linear resistance by FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor, constructs
A kind of noninductive memristor chaos circuit.The circuit is only made up of electric capacity, resistance, four kinds of electronic components of operational amplifier and diode,
And simple structure, it is easy to physics realization, it is adaptable to the generation of chaotic signal and the application in engineering circuit.
The content of the invention
The technical problems to be solved by the invention are broad sense memristor simulators, and are realized based on active band-pass filter a kind of
Memristor chaos circuit.
In order to solve the above technical problems, mixed the invention provides a kind of a kind of noninductive memristor based on active band-pass filter
Ignorant circuit, its structure is as follows：
The main circuit includes：Electric capacity C1, negative resistance, active band-pass filter, broad sense simulation memristor GM；Electric capacity C2's
Negative terminal is connected with the input of broad sense memristor simulator, wherein electric capacity C1Anode be connected with broad sense memristor simulator output end.
Second order active bandpass filter includes operational amplifier U2, resistance R1, resistance R2, resistance R3, resistance R4, electric capacity C2、
Electric capacity C3；Resistance R1Termination g ends, resistance R1Another termination d ends；Electric capacity C2Positive terminal connection amplifier U2Output end,
Electric capacity C2Negative pole end connection c ends；Electric capacity C3Positive terminal connection amplifier U2Inverting input, electric capacity C2Negative pole end connection g
End；Resistance R2A termination amplifier U2Inverting input, resistance R2Other end connection amplifier U2Output end；Resistance R3One
Termination amplifier U2In-phase input end, resistance R3Other end connection amplifier U2Output end；Resistance R4One end connection amplifier U2
In-phase input end, resistance R4Another termination d ends；Wherein d ends are grounded.
FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor simulator includes diode rectification bridge circuit and first-order filtering circuit.The diode rectifier bridge
Circuit includes：Diode D1, diode D2, diode D3, diode D4；Diode D1Negative pole end and diode D2Negative pole end
It is connected, is denoted as 4 ends；Diode D2Positive terminal and diode D3Negative pole end be connected, be denoted as 3 ends；Diode D3Positive terminal with
Diode D4Positive terminal be connected, be denoted as 2 ends；Diode D4Negative pole end and diode D1Positive terminal be connected, be denoted as 1 end；1
End, 3 ends are used as input and output end.The input of the first-order filtering circuit is connected with the end of diode rectifier circuit 4, output
End is connected with the end of diode bridge circuit 2.
The Cai Shi memristor chaos circuit main circuits based on active band-pass filter are as shown in figure 1, contain four in circuit
Individual state variable, they are respectively node voltage V1、V2、V3With electric capacity C0Both end voltage V0。
Beneficial effects of the present invention are as follows
A kind of Cai Shi memristor chaos circuits based on active band-pass filter of the invention are by adjusting circuit parameter
Produce double scroll chaos, become new memristor chaos signal generator, for chaos system research with
Using with impetus.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, below according to specific embodiment and with reference to accompanying drawing,
The present invention is further detailed explanation, wherein
Fig. 1 is based on the Cai Shi memristor chaos circuits of active band-pass filter；
Fig. 2 FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristors are equivalent to realize circuit；
Memristor chaos circuit is in V when Fig. 3 chooses canonical parameter3(t)-V0Numerical simulation phase rail figure and experiment in (t) plane
As a result；
Memristor chaos circuit is in V when Fig. 4 chooses canonical parameter1(t)-V3Numerical simulation phase rail figure and experiment in (t) plane
As a result；
Memristor chaos circuit is in V when Fig. 5 chooses canonical parameter2(t)-V3Numerical simulation phase rail figure and experiment in (t) plane
As a result；
Specific embodiment
Mathematical modeling：A kind of Cai Shi memristor chaos signal generator circuits based on active band-pass filter of the present embodiment
Build as shown in Figure 1.
FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor GMEquivalent realize circuit as shown in Fig. 2 according to flowing through broad sense memristor GMElectric current i and wide
Adopted memristor GMThe voltage v at two ends, can obtain C-V characteristic relational expression as follows：
Wherein, ρ=1/ (2nVT), IS, n and VTRespectively diode reverse saturation current, emission ratio and thermal voltage.Type
The diode parameters of number 1N4148 are respectively IS=6.8913nA, n=1.8268 and VT=25mV.
The Cai Shi memristor chaos circuit ordinary differentials of active band-pass filter can be based on according to four above-mentioned state variables
Equation is as follows：
Wherein k=R4/R3
To (2) formula by introducing new variable, dimensionless treatment is carried out to circuit parameter
The design uses the operational amplifier of model AD711KN, there is provided ± 15V operating voltages, wherein EsatFor computing is put
The saturation voltage of big device, Esat≈13V。
Numerical simulation：Using MATLAB simulation Software Platforms, numerical simulation can be carried out to the system as described by formula (4)
Analysis.Selection Runge-Kutta (ODE45) algorithm is solved to system equation, can obtain the phase of this memristor chaos circuit state variable
Rail figure.Permanent circuit parameter C0=20nF, C1=3.3nF, C2=100nF, C3=100nF, R0=0.5k Ω, R1=135 Ω, R2
=10k Ω, R3=1k Ω, R4=50 Ω, Ra=2k Ω, Rb=2k Ω, R=1.35k Ω.The MATLAB of corresponding Different Plane
Numerical simulation phase rail figure is respectively as shown in Fig. 3,4,5.
Meanwhile, the value of selection resistance R is variable, and numerical simulation can obtain the phase rail operation shape of the circuit under different resistance values R
State.By the adjustment to resistance value R, this circuit can produce corresponding different complicated chaos scrollwork.It is indicated above that this circuit
Different chaotic signals can be produced by adjusting circuit parameter values, obtain various chaos rows with complex dynamic characteristics
To have reached a kind of original intention of feasible new memristor chaos signal generator of invention.
Experimental verification：The design uses the operational amplifier of model AD711KN, and provides ± 15V operating voltages.Resistance
Using accurate adjustable resistance, electric capacity is ROHS.Theory analysis and numerical simulation show that the chaos produced by the circuit attracts
Son is more sensitive to original state, when experimental circuit is powered up, in the triggering of node " a " place, it is easy to which the state required for realizing becomes
Amount initial value.
Measured waveform is captured using Tektronix DPO3034 digital storage oscilloscopes, it is mixed in logarithm value emulation respectively
Ignorant attractor phase rail figure has carried out experimental verification, and experimental result is respectively as shown in Fig. 3, Fig. 4, Fig. 5.
Comparing result can be illustrated：A kind of broad sense memristor chaos for producing double scroll chaos that the present invention is realized
Circuit, the non-linear phenomena observed in experimental circuit and its development law fit like a glove with simulation result, can be with proof theory
Analysis and the correctness of numerical simulation.Therefore, a kind of Cai Shi memristor chaos based on active band-pass filter that the present invention is realized
Circuit signal generator, its simple structure, avoids inductance element, effectively prevent the inductance element endophyte in physical circuit
Equivalent series resistance influence；And coupled by broad sense memristor, realized a kind of new chaos signal source.It is whole
Body circuit can produce various different non-linear phenomenas by regulating system parameter, become a class it is novel, it is feasible
Chaos signal generator.Believe that this invention there will be larger progradation for the development of chaos system.
Above-described embodiment is only intended to clearly illustrate example of the present invention, and is not to embodiment party of the invention
The restriction of formula.For those of ordinary skill in the field, it is different that other can also be made on the basis of the above description
The change or variation of form.There is no need and unable to be exhaustive to all of implementation method.
Claims (4)
1. a kind of Cai Shi memristor chaos circuits based on active band-pass filter, it is characterised in that：Including electric capacity C1, negative resistance, have
Source bandpass filter, FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor GM；Wherein electric capacity C1Positive terminal is connected with the output end of broad sense memristor, electric capacity C2Negative pole
End is connected with the input of broad sense memristor.
2. a kind of Cai Shi memristor chaos circuits based on active band-pass filter according to claim 1, it is characterised in that：
The second order active bandpass filter includes operational amplifier U2, resistance R1, resistance R2, resistance R3, resistance R4, electric capacity C2, electric capacity
C3；Resistance R1Termination g ends, resistance R1Another termination d ends；Electric capacity C2Positive terminal connection amplifier U2Output end, electric capacity
C2Negative pole end connection c ends；Electric capacity C3Positive terminal connection amplifier U2Inverting input, electric capacity C2Negative pole end connection g ends；
Resistance R2A termination amplifier U2Inverting input, resistance R2Other end connection amplifier U2Output end；Resistance R3One end
Meet amplifier U2In-phase input end, resistance R3Other end connection amplifier U2Output end；Resistance R4One end connection amplifier U2's
In-phase input end, resistance R4Another termination d ends；Wherein d ends are grounded.
3. a kind of Cai Shi memristor chaos circuits based on active band-pass filter according to claim 1, the single order is wide
Adopted memristor simulator is diode rectifier bridge circuits cascading single order RC filter circuits；It is characterized in that
The diode rectification bridge circuit includes：Diode D1, diode D2, diode D3, diode D4；Diode D1Negative pole
End and diode D2Negative pole end be connected, be denoted as 4 ends；Diode D2Positive terminal and diode D3Negative pole end be connected, be denoted as 3
End；Diode D3Positive terminal and diode D4Positive terminal be connected, be denoted as 2 ends；Diode D4Negative pole end and diode D1's
Positive terminal is connected, and is denoted as 1 end；1 end, 3 ends are used as input and output end.The input and diode of the first-order filtering circuit
The end of rectification circuit 4 is connected, and output end is connected with the end of diode bridge circuit 2.
4. a kind of Cai Shi memristor chaos circuits based on active band-pass filter according to claim 1 or 2 or 3, it is special
Levy and be：Contain four state variables, respectively node voltage V1、V2、V3With electric capacity C0Both end voltage V0。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108322300A (en) * | 2018-04-27 | 2018-07-24 | 常州大学 | Chaos cluster is sent out and three rank memristor chaos circuits of almost periodic behavior |
| CN108833073A (en) * | 2018-04-17 | 2018-11-16 | 杭州电子科技大学 | A kind of equivalent-circuit model based on the chaotic oscillator recalled container and recall sensor |
| CN109586892A (en) * | 2017-09-29 | 2019-04-05 | 西华大学 | A kind of fractional order memristor chaos circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109586892A (en) * | 2017-09-29 | 2019-04-05 | 西华大学 | A kind of fractional order memristor chaos circuit |
| CN108833073A (en) * | 2018-04-17 | 2018-11-16 | 杭州电子科技大学 | A kind of equivalent-circuit model based on the chaotic oscillator recalled container and recall sensor |
| CN108833073B (en) * | 2018-04-17 | 2021-09-07 | 杭州电子科技大学 | Recall container and memory inductor-based equivalent circuit model of chaotic oscillator |
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Application publication date: 20170630 |