CN103531230B - A kind ofly recall container based on the floating of memristor and recall sensor simulator - Google Patents
A kind ofly recall container based on the floating of memristor and recall sensor simulator Download PDFInfo
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- CN103531230B CN103531230B CN201310524634.2A CN201310524634A CN103531230B CN 103531230 B CN103531230 B CN 103531230B CN 201310524634 A CN201310524634 A CN 201310524634A CN 103531230 B CN103531230 B CN 103531230B
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Abstract
The invention discloses and a kind ofly recall container based on the floating of memristor and recall sensor simulator, comprise the first differential difference current transmission device, second differential difference current transmission device, memristor, resistance and reactance component, ground connection after the X of the first differential difference current transmission device holds and is connected with described memristor, an input end grounding of the second differential difference current transmission device, the in-phase current output terminal of another input end and the first differential difference current transmission device, one end of reactance component is connected, the other end ground connection of reactance component, ground connection after the X of the second differential difference current transmission device holds and is connected with described resistance, the in-phase current output terminal of the second differential difference current transmission device, inverse current output terminal is connected with two input ends of the first differential difference current transmission device respectively.The present invention can substitute actual recalling container and recall the design that sensor carries out circuit effectively, and to recalling container and recalling the voltage at sensor two ends without any restriction, can be connected flexibly with other electron component.
Description
Technical field
The present invention relates to memristor technical field, particularly a kind ofly recall container based on the floating of memristor and recall sensor simulator.
Background technology
Since U.S.'s in May, 2008 HP Lab successfully realizes memristor (memristor), memristor is at nonvolatile memory, and artificial neural network and circuit design field are widely used.On the basis of memristor, Cai Shaotang teaches and also been proposed in Dec, 2008 concept recalled container (memcapacitor) and recall sensor (meminductor).These two kinds new memory cells are the same with memristor all has memory function, but recalls container and recall sensor device energy stored energy, and memristor then can not.The appearance of these memory cells illustrates a brand-new tera incognita, in electronic applications, likely cause a series of change newly.
As nano-electronic devices, recall container, recall that sensor is the same with memristor also only to be existed in laboratory environment now.Realize difficulty, high in cost of production shortcoming because nanometer technology exists, these memory devices realize commercialization also needs a very long process.Therefore, the simulating equivalent circuit building them according to the actual electrology characteristic of these devices is to analyzing and study the circuit that is made up of these memory cells and system has great importance and is worth.
Up to the present, there is lot of documents to report realistic model and the simulator of memristor, however relative less with simulator with the realistic model recalling sensor about recalling container.
The people such as Y.V.Pershin propose one and simply become class device, memristor can be converted into and recall container and recall sensor (PershinY.V, DiVentra, M.Memristivecircuitssimulatememcapzcitorandmeminductor [J] .Electron.Lett., 2010, Vol.46, No.7), but recall container what realize and recall in sensor the dead resistance containing a series connection, and the circuit proposed can only be grounded mode.
One adopt operating amplifier with current feedback (CurrentFeedbackOperationalAmplifier) to realize recall container simulating equivalent circuit and can simulate that to recall container typical accurately, there is the q-u(electric charge-voltage shrinking lagging characteristics) curve (D.Biolek, VBiolkova.Mutatorfortransformingmemristorintomemcapacito r [J] .Electron.Lett., 2010, Vol.46, No.21), but this circuit can only realize memristor to be converted into recall container, and can not realize recalling sensor, and this circuit also can only access other circuit with earthing mode.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of structure simple, the recalling container based on the floating of memristor and recall sensor simulator of floating connection can be realized.
The technical scheme that the present invention solves the problem is: a kind ofly recall container based on the floating of memristor and recall sensor simulator, comprise the first differential difference current transmission device, second differential difference current transmission device, memristor, resistance and reactance component, described first differential difference current transmission device has two input ends, an in-phase current output terminal and an X end, described second differential difference current transmission device has two input ends, an in-phase current output terminal, an inverse current output terminal and an X end, ground connection after the X of described first differential difference current transmission device holds and is connected with described memristor, an input end grounding of described second differential difference current transmission device, the in-phase current output terminal of another input end and the first differential difference current transmission device, one end of reactance component is connected, the other end ground connection of reactance component, ground connection after the X of the second differential difference current transmission device holds and is connected with described resistance, the in-phase current output terminal of described second differential difference current transmission device, inverse current output terminal is connected with two input ends of the first differential difference current transmission device respectively.
Described reactance component is inductance or electric capacity.
Beneficial effect of the present invention is: the present invention correctly can simulate the q-u family curve of recalling container and recall sensor
(magnetic flux-electric current) family curve, effectively can substitute actual recalling container and recall design and the correlative study that sensor carries out circuit, and recalling container and recalling sensor simulator of the present invention's design is floating ground, to recalling container and recalling the voltage at sensor two ends without any restriction, can realize being connected flexibly with other electron component or device.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated.
As shown in Figure 1, the present invention includes the first differential difference current transmission device U1, second differential difference current transmission device U2, memristor M, linear resistance R and linear reactance element Z, ground connection after the X of described first differential difference current transmission device U1 holds and is connected with described memristor M, an input end Y2 ground connection of described second differential difference current transmission device U2, the in-phase current output terminal Z+ of another input end Y1 and the first differential difference current transmission device U1, one end of reactance component Z is connected, the other end ground connection of reactance component Z, ground connection after the X of the second differential difference current transmission device U2 holds and is connected with described resistance R, the inverse current output terminal Z-of described second differential difference current transmission device U2, in-phase current output terminal Z+ respectively with two input end Y1 of the first differential difference current transmission device U1, Y2 is connected.
First differential difference current transmission device U1 mainly realizes voltage-electric current conversion, and the second differential difference current transmission device U2 mainly realizes current integration (or differential) function.
Two input ends Y1, Y2 of first differential difference current transmission device U1 are connected with input port A, B respectively, and X end is through memristor M ground connection.Port identity according to differential difference current transmission device:
v
X=v
Y1-v
Y2,i
X=i
Z+=-i
Z-,i
Y=0（1）
The output current that can calculate the first differential difference current transmission device U1 current output terminal Z+ is
Wherein R
m(t) for t memristor M corresponding recall resistance.
The input end Y1 of the second differential difference current delivery U2 is connected with the current output terminal Z+ of the first differential difference current transmission device U1, and wiring reactance component Z is to ground, and the direct ground connection of input end Y2, X holds linear resistance R ground connection.Negative-phase sequence curent output terminal Z-is connected with input port A, B respectively with in-phase current output terminal Z+, forms a complete current path.Can obtain according to the port identity of differential difference current transmission device equally
Thus the equivalent input impedance that can calculate between input port A, B is
From formula (4), when the linear reactance element Z in Fig. 1 is inductance, this circuit can be equivalent to one and recall container, and it is recalled capacitance and can be expressed as
When the linear reactance element Z in Fig. 1 is electric capacity, this circuit can be equivalent to one and recall sensor, and it is recalled inductance value and can be expressed as
L
M=R·R
M(t)·C（6）
This embodiment is when circuit topological structure is constant, the electrology characteristic recalled container He recall sensor can be simulated respectively by accessing reactance component Z of different nature, and the simulator of the present invention's design is floating ground, to recalling container and recalling the voltage at sensor two ends without any restriction, thus multi-form connected mode can be realized with other electron component or device.
Claims (2)
1. recall container based on the floating of memristor and recall sensor simulator for one kind, it is characterized in that: comprise the first differential difference current transmission device, second differential difference current transmission device, memristor, resistance and reactance component, described first differential difference current transmission device has two input ends, an in-phase current output terminal and an X end, described second differential difference current transmission device has two input ends, an in-phase current output terminal, an inverse current output terminal and an X end, ground connection after the X of described first differential difference current transmission device holds and is connected with described memristor, an input end grounding of described second differential difference current transmission device, the in-phase current output terminal of another input end and the first differential difference current transmission device, one end of reactance component is connected, the other end ground connection of reactance component, ground connection after the X of the second differential difference current transmission device holds and is connected with described resistance, the in-phase current output terminal of described second differential difference current transmission device, inverse current output terminal is connected with two input ends of the first differential difference current transmission device respectively.
2. as claimed in claim 1 recall container based on the floating of memristor and recall sensor simulator, it is characterized in that: described reactance component is inductance or electric capacity.
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| CN105161303B (en) * | 2015-08-04 | 2017-10-03 | 武汉科技大学 | A kind of adjustable condenser realizes circuit |
| CN105119586A (en) * | 2015-08-27 | 2015-12-02 | 华南理工大学 | Series resonance circuit based on memcapacitor |
| CN106202796B (en) * | 2016-07-22 | 2019-03-15 | 湘潭大学 | A kind of general memory device simulator |
| CN107526896A (en) * | 2017-09-08 | 2017-12-29 | 杭州电子科技大学 | A kind of magnetic control recalls the equivalent simulation circuit of sensor model |
| CN107526897A (en) * | 2017-09-08 | 2017-12-29 | 杭州电子科技大学 | A kind of equivalent simulation circuit for flowing control and recalling sensor |
| CN108763789B (en) * | 2018-06-01 | 2022-05-31 | 杭州电子科技大学 | Rotary memory inductor circuit based on memory capacitor |
| CN110111655A (en) * | 2019-05-06 | 2019-08-09 | 成都师范学院 | A kind of extremely simple floating ground magnetic control recalls sensor circuit simulation model |
| CN111564970A (en) * | 2020-06-12 | 2020-08-21 | 成都师范学院 | General conversion circuit for converting grounding into floating grounding |
| CN113095017B (en) * | 2021-02-25 | 2022-09-23 | 广东技术师范大学 | Universal simulator for memory element |
| CN113054954A (en) * | 2021-03-09 | 2021-06-29 | 湖南大学 | Nonvolatile CMOS memristor and reconfigurable array architecture formed by same |
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| CN103297025A (en) * | 2013-05-02 | 2013-09-11 | 杭州电子科技大学 | Memristor emulator |
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| CN103297025A (en) * | 2013-05-02 | 2013-09-11 | 杭州电子科技大学 | Memristor emulator |
Non-Patent Citations (2)
| Title |
|---|
| Emulation of floating memcapacitors and meminductors using current conveyors;Yu.V.Pershin,M.Di Ventra;《ELECTRONICS LETTERS》;20110217;第47卷(第4期);第243页至第244页 * |
| General configuration for realizing current-mode first-order all-pass filter usig DVCC;SHARAM MINAEI,MUHAMMED A.IBRAHIM;《International Journal Electronics》;20050630;第92卷(第6期);第347页至第356页 * |
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