CN105553459B - Voltage-controlled memristor emulator circuit floatingly - Google Patents
Voltage-controlled memristor emulator circuit floatingly Download PDFInfo
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- CN105553459B CN105553459B CN201510937478.1A CN201510937478A CN105553459B CN 105553459 B CN105553459 B CN 105553459B CN 201510937478 A CN201510937478 A CN 201510937478A CN 105553459 B CN105553459 B CN 105553459B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
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Abstract
The invention discloses a kind of floating voltage-controlled memristor equivalent simulation circuits, and including integrated operational amplifier U1, multiplier U2 and U3 and a small amount of resistance, capacitance, resistance connects input terminal；Resistance is connected with integrated operational amplifier U1, and being used to implement differential amplification, reverse phase addition, integral operation and reverse phase using integrated operational amplifier U1 amplifies；Integrated operational amplifier U1 is connected with multiplier U2, U3, and multiplier U2 is connected with U3, and multiplier U2, U3 are used to implement the multiplication of signal.The present invention realizes voltage-controlled memristor C-V characteristic using analog circuit.
Description
Technical field
The invention belongs to technical field of circuit design, are related to a kind of memristor emulator circuit, and in particular to the floating ground of one kind
The design and realization of voltage-controlled memristor emulator circuit.
Background technology
Memristor is the 4th kind of circuit element mutually arranged side by side with resistance, capacitance, inductance in circuit, is Cai Shaotang in 1971 years
It proposes, HP Lab realizes memristor within 2008.Memristor has non-volatile and nonlinear property, can be applied to
The non-property lost memory, artificial neural network and circuit design.But since existing memristor is using nanometer technology, exist
Realize the defects of difficult and of high cost, element of the memristor at present also not as a reality moves towards market.Thus, design is a kind of
Memristor equivalent circuit simultaneously substitutes actual memristor with it and carries out experiment and application study and be of great significance.Even if memristor in future
Device commercialization and the presence in the form of large scale integrated circuit, the difficult element with the presence of single nanoscale memristor, because
This, using memristor equivalent circuit actual memristor is replaced to carry out application circuit design will be with long-range meaning and value.
At present, though having reported the presence of a small amount of memristor equivalent circuit, focus primarily upon magnetic control memristor and
The equivalent circuit of lotus control memristor, the not yet equivalent circuit there are voltage-controlled memristor, and utilize the circuit of voltage-controlled memristor design
It is simpler than the circuit containing magnetic control memristor or lotus control memristor, and the memristor on floating ground is used than the memristor that one end is grounded
It is more convenient.Therefore, a kind of floatingly voltage-controlled memristor equivalent circuit of design is of great significance.
The content of the invention
For deficiencies of the prior art, the present invention provides a kind of floating voltage-controlled memristor emulator circuit,
Simulating the C-V characteristic of voltage-controlled memristor, substitute actual voltage-controlled memristor and tested and application and research.
The technical solution adopted for solving the technical problem of the present invention is as follows：A kind of floatingly voltage-controlled memristor equivalent simulation electricity
Road, including integrated operational amplifier U1, multiplier U2 and U3 and a small amount of resistance, capacitance, resistance connection input terminal；Resistance and collection
It is connected into operational amplifier U1, differential amplification, reverse phase addition, integral operation and anti-is used to implement using integrated operational amplifier U1
Mutually amplify；Integrated operational amplifier U1 is connected with multiplier U2, U3, and multiplier U2 is connected with U3, and multiplier U2, U3 are used to implement
The multiplication of signal.Specifically
Resistance R1 one end connection input terminal (A), while be connected with one end of resistance R2, other end ground connection, R2's
It is another to terminate at integrated operational amplifier U1 pins 3, while be connected with one end of resistance R3, the other end ground connection of resistance R3；Electricity
R4 one end connection input terminal (B) is hindered, the other end connects with one end of resistance R5, while is connected on integrated operational amplifier U1
Pin 2, the another of resistance R5 terminate at integrated operational amplifier U1 pins 1.
Integrated operational amplifier U1 uses LF347N；The pin 1 of the integrated operational amplifier U1 is by resistance R5 with drawing
Foot 2 connects, and pin 2 passes through R3 by the input terminal (B) R4 connections Suo Shu, pin 3 by the input terminal (A) R2 connections Suo Shu
Ground connection, pin 4 meet power supply VCC, and pin 11 meets power supply VEE；The pin 1 of integrated operational amplifier U1 passes through resistance R8 and pin 6
It is connected, pin 5 is grounded, and pin 6 connects pin 7 by resistance R9；Pin 7 is connected by resistance R10 with pin 9；Pin 8 passes through electricity
The parallel network for holding C1 and resistance R11 connects with pin 9, and pin 10 is grounded；Pin 13 connects pin 8, pin 12 by resistance R12
Ground connection；Pin 14 is connected by resistance R13 with pin 13, is connected by resistance R6 with pin 6.
Multiplier U2 uses AD633JN；The X1 pins of the multiplier U2 connect the pin 1, Y1 of integrated operational amplifier U1
Pin is connected with the pin 8 of integrated operational amplifier U1, and X2 pins and Y2 pins ground connection, VS+ pins connect power supply VCC, VS- pin
It connects power supply VEE, Z pin by resistance R14 with W pins to be connected, be grounded by resistance R15, W pins are drawn by resistance R7's and U1
Foot 6 is connected.
Multiplier U3 uses AD633JN；The X1 pins of multiplier U3 connect the W pins of multiplier U2, Y1 pins and integrated fortune
The pin 8 for calculating amplifier U1 is connected, and X2 pins and Y2 pins ground connection, VS+ pins connect power supply VCC, VS- pin and meet power supply VEE, Z
Pin is connected by resistance R16 with W pins, is grounded by resistance R17, and W pins are connected by resistance R4 with the pin 2 of U1.
The present invention devises a kind of simulating equivalent circuit that can realize voltage-controlled memristor C-V characteristic floatingly, simulation electricity
1 integrated transporting discharging and 2 multipliers and a small amount of resistance, capacitance are contained in road, and single isolated pressure can not be obtained at present and in the future
In the case of controlling memristor device, available for the relevant circuit design of voltage-controlled memristor, experiment and application, to voltage-controlled memristor
Characteristic and application study have great importance.
The analog circuit for the realization memristor that the present invention designs realizes that voltage-controlled memristor volt-ampere is special using analog circuit
Property, implement voltage-controlled memristor C-V characteristic.The present invention realizes memristor using integrated computation circuit and analog multiplier
Corresponding computing in characteristic, wherein, integrated operational amplifier is mainly realizing that the reverse phase of the differential amplification of voltage, voltage adds
The reverse phase amplification of method, the integral operation of voltage and voltage, analog multiplier is realizing the product between voltage and voltage.
Description of the drawings
Fig. 1 is the circuit structure block diagram of the present invention.
Fig. 2 is memristor equivalent simulation circuit schematic diagram of the present invention.
Specific embodiment
It elaborates below in conjunction with the accompanying drawings to the preferred embodiment of the present invention.
The theoretical starting point of the present invention is the general expression of voltage-controlled memristor C-V characteristic：
I=G (z, u) u (t),
Wherein, variable z represents the state of memristor.
As shown in Figure 1, the voltage-controlled memristor simulating equivalent circuit of the present embodiment includes integrated operational amplifier U1, multiplier
U2, U3 and a small amount of resistance, capacitance, integrated operational amplifier U1 mainly realize differential amplification, reverse phase addition, integral operation and reverse phase
Amplification；Multiplier U2, U3 realize the multiplication of two signals；U1 uses AD633JN using LF347N, U2 and U3.
As shown in Fig. 2, resistance R1 connection input terminals A is connected to one end of resistance R1 in the present embodiment, the end of resistance R1 is also
Connect with one end of resistance R2, the other end ground connection of resistance R1, the other end of resistance R2 draws with the 3rd of integrated operational amplifier U1
Foot connects, i.e., connects with the in-phase end of difference amplifier, and also one end with resistance R3 connects, the other end ground connection of resistance R3.If
The input current of circuit is i：
Wherein, uAFor the voltages of input terminal A over the ground.Due to R2+R3>>R1, the input current of circuit is approximately：
Have 4 operational amplifiers in integrated operational amplifier U1, wherein, the 1st, 2, the corresponding operational amplifier of 3 pins, with
Peripheral resistance R2, R3, R4, R5 form difference amplifier, and to realize that both-end voltage u switchs to single-ended voltage over the ground, i.e. U1 draws
The voltage of foot 1 is：
Wherein, uBFor the voltages of input terminal B over the ground, due to R4=R5, then the voltage of U1 pins 1 be
u1=uA-uB
Integrated operational amplifier U1 the 5th, 6, the corresponding operational amplifier of 7 pins, with peripheral resistance R6, R7, R8, R9 structure
Into reverse phase adder, i.e. the voltage of U1 pins 7 is：
Wherein, u2wFor the W pin voltages of multiplier U2, u14For the voltage of integrated operational amplifier U1 pins 14.
Integrated operational amplifier U1 the 8th, 9,10 pins form integrator with peripheral capacitance C1, resistance R10, R11, to
Realize the voltage of the integration, i.e. U1 pins 8 of input voltage：
Integrated operational amplifier U1 the 12nd, 13, the corresponding operational amplifier of 14 pins, with peripheral resistance R12, R13 structure
Into inverting amplifier, i.e. the voltage of U1 pins 14 is：
If above formula is represented with differential form, for
u14For representing the state of memristor.
Multiplier U2 is realizing input voltage u1With the voltage u of U1 pins 88Product calculation, i.e. U2 output terminals W pins
Voltage：
Multiplier U3 is realizing the voltage u of U2 output terminal W pins2wWith the voltage u of U1 pins 88Product calculation, i.e. U3
The voltage of output terminal W pins：
As shown in Fig. 2, the C-V characteristic of input terminal A, B are：
Therefore,
Wherein,
The C-V characteristic of memristor simulating equivalent circuit relatively learns conductance with voltage-controlled memristor C-V characteristic：
The 1st pin of integrated operational amplifier U1 is connected by resistance R5 with the 2nd pin, and the 2nd pin is used as letter by R4
Number input terminal, the 3rd pin are grounded by R3, and the 4th pin meets+15V power supply VCC, and the 11st pin meets -15V power supplys VEE；Integrated fortune
The 1st pin for calculating amplifier U1 is connected by resistance R8 with the 6th pin, and the 5th pin ground connection, the 6th pin connects the 7th by resistance R9
Pin；7th pin is connected by resistance R10 with the 9th pin；8th pin passes through the parallel network of capacitance C1 and resistance R11 and
9 pins connect, the 10th pin ground connection；13rd pin connects the 8th pin, the 12nd pin ground connection by resistance R12；14th pin passes through
Resistance R13 connects with the 13rd pin, is connected by resistance R6 with the 6th pin.
The X1 pins of multiplier U2 meet the 1st pin of integrated operational amplifier U1, Y1 pins and integrated operational amplifier U1
The 8th pin connect, X2 pins and Y2 pins ground connection, VS+ pins connect+15V power supplys VCC, VS- pin and meet -15V power supplys VEE, Z
Pin is connected by resistance R14 with W pins, is grounded by resistance R15, and W pins are connected by resistance R7 with the 6th pins of U1.
The X1 pins of multiplier U3 connect the W pins of multiplier U2, the 8th pin of Y1 pins and integrated operational amplifier U1
Connect, X2 pins and Y2 pins ground connection, VS+ pins, which connect+15V power supplys VCC, VS- pin and connect -15V power supplys VEE, Z pin, passes through electricity
Resistance R16 connects with W pins, is grounded by resistance R17, W pins are connected by resistance R4 with the 2nd pins of U1.
Those of ordinary skill in the art are it should be appreciated that above example is intended merely to the verification present invention, and not makees
For limitation of the invention, as long as within the scope of the invention, variation, deformation to above example will all fall in the present invention
Protection domain in.
Claims (1)
1. voltage-controlled memristor equivalent simulation circuit floatingly, including integrated operational amplifier U1, multiplier U2, multiplier U3；It is special
Sign is：Resistance R1 one end connects an input terminal（A), while with one end of resistance R2 it is connected, the other end ground connection of resistance R1,
The another of resistance R2 terminates at integrated operational amplifier U1 pins 3, while is connected with one end of resistance R3, the other end of resistance R3
Ground connection；Resistance R4 one end connects another input terminal（B), the other end connects with one end of resistance R5, while is connected on integrated computation
Amplifier U1 pins 2, the another of resistance R5 terminate at integrated operational amplifier U1 pins 1；
The integrated operational amplifier U1 uses LF347N；The pin 1 of the integrated operational amplifier U1 is by resistance R5 with drawing
Foot 2 connects, and pin 2 passes through input terminal resistance R4 connections Suo Shu（B), pin 3 passes through input terminal resistance R2 connections Suo Shu
（A), it is grounded by resistance R3, pin 4 meets power supply VCC, and pin 11 meets power supply VEE；The pin 1 of integrated operational amplifier U1 passes through
Resistance R8 is connected with pin 6, and pin 5 is grounded, and pin 6 connects pin 7 by resistance R9；Pin 7 passes through resistance R10 and 9 phase of pin
It connects；Pin 8 is connected by the parallel network of capacitance C1 and resistance R11 with pin 9, and pin 10 is grounded；Pin 13 passes through resistance R12
Pin 8 is connect, pin 12 is grounded；Pin 14 is connected by resistance R13 with pin 13, is connected by resistance R6 with pin 6；
The multiplier U2 uses AD633JN；The X1 pins of the multiplier U2 connect the pin 1, Y1 of integrated operational amplifier U1
Pin is connected with the pin 8 of integrated operational amplifier U1, and X2 pins and Y2 pins ground connection, VS+ pins connect power supply VCC, VS- pin
It connects power supply VEE, Z pin by resistance R14 with W pins to be connected, be grounded by resistance R15, W pins pass through resistance R7 and integrated fortune
The pin 6 for calculating amplifier U1 is connected；
The multiplier U3 uses AD633JN；The X1 pins of multiplier U3 connect the W pins of multiplier U2, Y1 pins and integrated fortune
The pin 8 for calculating amplifier U1 is connected, and X2 pins and Y2 pins ground connection, VS+ pins connect power supply VCC, VS- pin and meet power supply VEE, Z
Pin is connected by resistance R16 with W pins, is grounded by resistance R17, and W pins pass through resistance R4 and integrated operational amplifier U1
Pin 2 be connected.
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| CN201510937478.1A CN105553459B (en) | 2015-12-15 | 2015-12-15 | Voltage-controlled memristor emulator circuit floatingly |
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| CN106130713B (en) * | 2016-07-14 | 2019-03-05 | 郑州轻工业学院 | A kind of most simple four-dimensional self-governing chaos system and realization circuit with double memristors |
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| CN109672516A (en) * | 2017-10-13 | 2019-04-23 | 西华大学 | A kind of lotus control memristor chaos circuit |
| CN108172254B (en) * | 2018-01-02 | 2020-12-11 | 深圳璞芯智能科技有限公司 | Large-dynamic-range floating memristor equivalent element and nonlinear controllable analog resistor |
| CN107993686B (en) * | 2018-01-12 | 2020-09-01 | 深圳璞芯智能科技有限公司 | Floating ground voltage control memristor equivalent element |
| CN108718190B (en) * | 2018-06-01 | 2022-03-01 | 杭州电子科技大学 | Exponential type local active memristor simulator |
| CN108875204B (en) * | 2018-06-15 | 2022-04-26 | 成都师范学院 | Extremely simple floating ground load control memory sensor circuit simulation model |
| CN108846215B (en) * | 2018-06-21 | 2022-04-26 | 成都师范学院 | Extremely simple floating ground load control memristor circuit simulation model |
| CN109344467A (en) * | 2018-09-14 | 2019-02-15 | 常州大学 | A kind of extremely letter floating ground HP memristor equivalent circuit |
| CN111564970A (en) * | 2020-06-12 | 2020-08-21 | 成都师范学院 | General conversion circuit for converting grounding into floating grounding |
| CN113054987A (en) * | 2021-03-11 | 2021-06-29 | 杭州电子科技大学 | Homonymy twinborn local active memristor simulator |
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| CN202998051U (en) * | 2012-12-27 | 2013-06-12 | 西南大学 | Memristor-based hyperchaotic-system realization circuit |
| CN103744288A (en) * | 2013-12-20 | 2014-04-23 | 广西大学 | Memristor-based self-adaptive PD controller circuit |
| CN205265656U (en) * | 2015-12-15 | 2016-05-25 | 杭州电子科技大学 | Superficially voltage -controlled recall hinder ware emulation ware circuit |
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| DE102011076105A1 (en) * | 2011-05-19 | 2012-11-22 | Robert Bosch Gmbh | Sensor element with piezoelectric transducer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202998051U (en) * | 2012-12-27 | 2013-06-12 | 西南大学 | Memristor-based hyperchaotic-system realization circuit |
| CN103744288A (en) * | 2013-12-20 | 2014-04-23 | 广西大学 | Memristor-based self-adaptive PD controller circuit |
| CN205265656U (en) * | 2015-12-15 | 2016-05-25 | 杭州电子科技大学 | Superficially voltage -controlled recall hinder ware emulation ware circuit |
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