CN106067320A - A kind of simulating equivalent circuit of piecewise linearity magnetic control memristor - Google Patents
A kind of simulating equivalent circuit of piecewise linearity magnetic control memristor Download PDFInfo
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- CN106067320A CN106067320A CN201610534158.6A CN201610534158A CN106067320A CN 106067320 A CN106067320 A CN 106067320A CN 201610534158 A CN201610534158 A CN 201610534158A CN 106067320 A CN106067320 A CN 106067320A
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- memristor
- control switch
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- window comparator
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
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Abstract
The invention discloses the simulating equivalent circuit of a kind of piecewise linearity magnetic control memristor, circuit is made up of follower, phase inverter, inverting integrator, window comparator, votage control switch S and negative impedance installed in series；Amplifier U1Constitute follower, act primarily as buffer action, U2Constitute phase inverter, U3The integration to memristor port voltage, U is realized for inverting integrator3Output v3outInternal state control variable φ (t) of corresponding memristor；Amplifier U4And U5Constituting window comparator, its output level controls the break-make of votage control switch S；Amplifier U6And periphery resistance constitutes negative impedance change-over circuit.Work as v3outWhen≤1, window comparator is output as low level, and votage control switch S is off, and now the conductance of memristor is 1/Ra, work as v3outDuring ＞ 1, window comparator is output as high level, and votage control switch S is in the conduction state, and the conductance that now memristor is corresponding is (1/Ra+1/Rb).The present invention has the advantages that circuit is simple, effective.
Description
Technical field
The present invention relates to Analogic Electronic Circuits field, particularly relate to the analog equivalent of a kind of piecewise linearity magnetic control memristor
Circuit.
Background technology
In May, 2008, HP Lab research group used nanotechnology to achieve the resistance with " memory " characteristic, from
And confirm memristor concept and correlation theory.As with resistance, inductance, the 4th the basic passive device that electric capacity is arranged side by side, memristor
Device establishes the relation between magnetic linkage and electric charge, and its resistance is relevant with the voltage amplitude at two ends, polarity and working time.Owing to recalling
Resistance utensil has " memory " function, and its potential using value causes the extensive concern of Chinese scholars.Utilize its digital operation
Mode, memristor can realize non-volatile impedance memorizer (RRAM) and field programmable gate array (FPGA)；Utilize its mould
Intending working method, memristor can realize artificial neural network and novel class brain system.
Owing to memristor does not has commercialization, the modeling of memristor and breadboardin become the focus of current memristor research and ask
Topic, but the operating frequency of most of memristor model and equivalent circuit is the most very limited, the most really embodies the height of memristor
Frequently disposal ability.As a kind of nonlinear device, memristor can be used to realize high frequency chaos circuit, thus leads at chaotic secret
Letter, image encryption and electronic measurement system has important using value.In general, memristor is used to realize chaos circuit
There is a two ways:
(1) memristor of piecewise linear model is used to realize standard and class Chua's chaotic circuit, at certain Parameter Conditions
These circuit lower can produce different chaos attractors；
(2) magnetic control memristor utilizing smooth model realizes a series of new Chua's chaotic circuit.
Owing to memristor does not has commercialization, chaos circuit can only be set up on the basis of theory analysis, it is impossible to from circuit side
Its chaotic behavior is verified in face.Although the analog equivalent proposing smooth type memristor in document realizes circuit, but operating frequency is non-
The most limited.In order to verify the chaotic behavior of chaos circuit in terms of circuit, the present invention devises a kind of piecewise linearity magnetic control memristor
The simulating equivalent circuit of device.
Summary of the invention
In order to solve the problems referred to above, the present invention devises the simulating equivalent circuit of a kind of piecewise linearity magnetic control memristor.
The technical solution adopted in the present invention is:
The simulating equivalent circuit of memristor by follower, phase inverter, inverting integrator, window comparator, votage control switch and
Negative impedance installed in series is constituted；The output v of inverting integrator3outInternal state control variable φ (t) of corresponding memristor, window
The output level of mouth comparator controls the break-make of votage control switch S, works as v3outWhen≤1, window comparator is output as low level, pressure
Control switch is off, and now the conductance of memristor is-1/Ra, work as v3outDuring ＞ 1, window comparator is output as high level,
Votage control switch is in the conduction state, and the conductance that now memristor is corresponding is (-1/Ra+1/Rb)。
Operational amplifier U1Constitute follower, act primarily as buffer action；
Operational amplifier U2With three resistance (R4=R5=R6=10K) constitute phase inverter；
Operational amplifier U3, three resistance (R7=3K, R8=68K, R10=1K) and an electric capacity C5=47 μ F constitute anti-phase
Integrator, it is achieved the integration to memristor port voltage；
Operational amplifier U4And U5, two 1VDC power supply, resistance (R10=10K) and two diode D1 and D2
(IN4007) constituting window comparator, its output level controls the break-make of votage control switch S；
Votage control switch S uses high speed integrated switch ADG2012AKN, and supply voltage is ± 12V, Ra=2.5K, Rb=6K；
Operational amplifier U6And two resistance (R11=3K, R12=68K) constitute negative impedance change-over circuit；
Operational amplifier uses AD711AKN.
Work process is: operational amplifier U1Constitute follower, act primarily as buffer action, U2Constitute phase inverter, U3For anti-phase
Integrator realizes the integration to memristor port voltage, and its output can be expressed as
Wherein ζ=R7C5Quantizing factor for memristor equivalent circuit.According to Faraday's law, the integration of current versus time
For magnetic linkage, i.e. U3Internal state control variable φ (t) of the corresponding memristor of output.Integrated transporting discharging U4And U5Constitute window to compare
Device, its output level controls the break-make of votage control switch S.When the magnetic linkage that memristor flows across | when≤1, window compares | φ (t) |
Device is output as low level, and switch S is off, and now the conductance of memristor is-1/Ra, when memristor flows across
Magnetic linkage | φ (t) | is during ＞ 1, and window comparator is output as high level, and S is in the conduction state for switch, the electricity that now memristor is corresponding
Lead as (-1/Ra+1/Rb)。
The method have the benefit that: the circuit of design can realize the active magnetic control of piecewise linearity of Fig. 2 well and recall
Resistance device function.Compared with smooth type memristor equivalent circuit, owing to this equivalent circuit is without multiplier, thus simpler and just
In realization.
Accompanying drawing explanation
Accompanying drawing 1 is that the equivalence of the active memristor of piecewise linearity realizes circuit.
Accompanying drawing 2 is active magnetic control memristor φ-q curve.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described further.
Memristor has " memory " characteristic in certain frequency range, when exceeding certain frequency, and " the note of memristor
Recall " defunctionalization degenerate into linear resistance.The equivalent circuit proposed for the present invention, can derive effective operating frequency model
Enclose.If the input voltage of memristor is
V=Asin ω t
Then the magnetic linkage at memristor two ends corresponds to (setting initial value as 0)
By above-mentioned work process it can be seen that the magnetic linkage working as memristor two ends is consistently less than threshold value 1, i.e.
Time, memristor degenerates into linear resistance, and corresponding electric conductivity value is-1/Ra.Such that it is able to derive having of this circuit
Effect operating frequency isEffective operating frequency range of the memristor equivalent circuit that the present invention proposes and memristor two ends electricity
Amplitude A of pressure is closely related with quantizing factor ζ.Can carry by reducing the quantizing factor ζ of circuit the most in a particular application
Its effective operating frequency range high.
It is above presently preferred embodiments of the present invention, not the present invention is made any pro forma restriction, every foundation
The technical spirit of the present invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, belongs to inventive technique
In the range of scheme.
Claims (1)
1. the simulating equivalent circuit of a piecewise linearity magnetic control memristor, it is characterised in that circuit is by follower, phase inverter, anti-
Phase integral device, window comparator, votage control switch and negative impedance installed in series are constituted；Operational amplifier U1Constitute follower, main
Buffer action to be risen；Operational amplifier U2With three resistance R4=R5=R6=10K constitutes phase inverter；Operational amplifier U3, three
Resistance R7=3K, R8=68K, R10A=1K and electric capacity C5=47 μ F constitute inverting integrator, it is achieved to memristor port voltage
Integration, the output v of inverting integrator3outInternal state control variable φ (t) of corresponding memristor；Operational amplifier U4And U5、
Two 1VDC power supplys, resistance R10=10K and two diode D1 and D2 constitutes window comparator, and its output level controls pressure
The break-make of control switch S；Votage control switch S uses high speed integrated switch ADG2012AKN, and supply voltage is ± 12V, Ra=2.5K, Rb
=6K；Operational amplifier U6And two resistance R11=3K, R12=68K constitutes negative impedance change-over circuit；Work as v3outWhen≤1, window
Comparator is output as low level, and votage control switch S is off, and now the conductance of memristor is-1/Ra, work as v3out＞ 1
Time, window comparator is output as high level, and votage control switch S is in the conduction state, and the conductance that now memristor is corresponding is (-1/Ra+
1/Rb)。
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| CN201610534158.6A CN106067320A (en) | 2016-07-07 | 2016-07-07 | A kind of simulating equivalent circuit of piecewise linearity magnetic control memristor |
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| CN201610534158.6A CN106067320A (en) | 2016-07-07 | 2016-07-07 | A kind of simulating equivalent circuit of piecewise linearity magnetic control memristor |
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| CN106961262A (en) * | 2017-05-11 | 2017-07-18 | 湖北文理学院 | A kind of delay bistable circuit based on memristor |
| CN109508465A (en) * | 2017-09-15 | 2019-03-22 | 西华大学 | A kind of memristor circuit |
| CN109584929A (en) * | 2017-09-29 | 2019-04-05 | 西华大学 | A kind of magnetic control memristor circuit |
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| US20110119036A1 (en) * | 2009-11-17 | 2011-05-19 | Pino Robinson E | Method and apparatus for modeling memristor devices |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106961262A (en) * | 2017-05-11 | 2017-07-18 | 湖北文理学院 | A kind of delay bistable circuit based on memristor |
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| CN109508465A (en) * | 2017-09-15 | 2019-03-22 | 西华大学 | A kind of memristor circuit |
| CN109584929A (en) * | 2017-09-29 | 2019-04-05 | 西华大学 | A kind of magnetic control memristor circuit |
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Application publication date: 20161102 |