CN113078883A - Magnetic flux control type memcapacitor equivalent circuit and control method thereof - Google Patents

Magnetic flux control type memcapacitor equivalent circuit and control method thereof Download PDF

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CN113078883A
CN113078883A CN202110209772.6A CN202110209772A CN113078883A CN 113078883 A CN113078883 A CN 113078883A CN 202110209772 A CN202110209772 A CN 202110209772A CN 113078883 A CN113078883 A CN 113078883A
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operational amplifier
transconductance operational
terminal
memcapacitor
equivalent circuit
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CN113078883B (en
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郑辞晏
庄楚源
李亚
颜坤哲
练明坚
蔡璟雯
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Guangdong Polytechnic Normal University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

Abstract

The invention provides a magnetic flux control type memcapacitor equivalent circuit and a control method thereof, wherein the magnetic flux control type memcapacitor equivalent circuit comprises a transconductance operational amplifier and an analog multiplier U5A resistor, a capacitor and three transconductance operational amplifiers U1Transconductance operational amplifier U2Transconductance operational amplifier U3Transconductance operational amplifier U1The y end of the capacitor is used as an input end A of a magnetic flux control type memcapacitor equivalent circuit, and a transconductance operational amplifier U1P terminal of and analog multiplier U5Y of (A) to (B)2End-connected, transconductance operational amplifier U1Z terminal of (C)2Rear grounded transconductance operational amplifier U1X terminal and resistor R2After being connected in series, the signal is divided into two branches, wherein one branch is connected with an analog multiplier U5Is connected. The invention adopts the design of a floating terminal, and the built memory container simulator can be flexibly used as an independent memory containerConnected with other circuit devices.

Description

Magnetic flux control type memcapacitor equivalent circuit and control method thereof
Technical Field
The invention relates to the technical field of extraction of physiological electric signals, in particular to a magnetic flux control type memcapacitor equivalent circuit and a control method thereof.
Background
In 2009, massimiiano divantra and professor zeita begonia, and the like expand and provide the concept of a memory element on the basis of a memristor, and provide related concepts of a memory capacitor and a memory sensor, which are not physically and successfully realized at present, and currently, the memory capacitor circuit can be simulated and used only through software simulation and establishment of an equivalent circuit model.
Therefore, it is necessary to establish an effective memory device equivalent model to facilitate simulation research and application research of the memory device and its system. After the related concept of the memcapacitor is proposed, researchers have conducted some application researches on chaotic circuits, charge pump circuits, filter circuits, oscillating circuits and the like according to the flying linearity characteristics and the memory effect of the memcapacitor. Because the solid state memory container has not been commercialized yet, and the research in the aspect of the present close memory container mostly stays in mathematical model and equivalent circuit model, and most just converts the stage of realizing through recalling the resistance ware, because the wide application prospect of novel memory device, the research of recalling the container is paid attention to by the researcher.
In the past research, researchers design a circuit meeting the conversion relation according to the conversion relation between a memristor and a memristor, and the memristor is converted into the memristor, but the realized circuit is simple, the characteristics of the memristor can be approximately realized only under specific simplified conditions, and the realized memristor contains parasitic resistance, so that the precision of the memristor is not high. After the defects of the 'grounding' memcapacitor are pointed out, a circuit meeting the relation is designed by adopting general electronic elements such as a second generation current transmitter CCII, a resistor, a capacitor and the like according to the conversion relation of the memristor and the memcapacitor, the memristor is converted into the 'floating' memcapacitor without parasitic resistance, and the characteristics of the memcapacitor are further researched. However, the above memory container models convert the memristor into the memory container according to the conversion relationship between the memristor and the memory container, so that the memory capacity value and the characteristics of the memory container depend on the memory resistance value and the characteristics of the memristor to a certain extent, and the accurate operation result of the memory container model built by the memristor cannot be ensured.
In addition, in order to overcome the defect that a memristor built by a memristor cannot accurately operate, some memristor models without the memristor are provided, namely the provided memristor, the memristor and the memristor are respectively replaced by resistance, capacitance and inductance elements in an RLC series resonant circuit, and the influence of a memory device on the circuit is researched from the two aspects of time domain and frequency domain. Meanwhile, the analog memcapacitor circuit in the software can only work in limited frequency, which also increases the difficulty of the practical use of the analog memcapacitor circuit.
The existing analog memcapacitor circuit has the defects of working only in a limited terminal voltage range, high power consumption and only analog demonstration, so that the analog memcapacitor circuit cannot be popularized and used.
Disclosure of Invention
The invention aims to provide a magnetic flux control type memcapacitor equivalent circuit and a control method thereof, so that the magnetic flux control type memcapacitor equivalent circuit can be flexibly connected with other circuit devices for use, and the function of a memcapacitor is achieved.
Therefore, the magnetic flux control type memcapacitor equivalent circuit comprises a controller, a transconductance operational amplifier and an analog multiplier U5A plurality of resistors and capacitors, a transconductance operational amplifier is arranged in the transconductance operational amplifier U1Transconductance operational amplifier U2Transconductance operational amplifier U3Transconductance operational amplifier U1P terminal of and analog multiplier U5Y of (A) to (B)2End-connected, transconductance operational amplifier U1The grounding circuit of the z end is connected with at least one capacitor in series, and a transconductance operational amplifier U1The x end of the analog multiplier is connected with at least one resistor in series and then is divided into two branches, wherein one branch is connected with the analog multiplier U5Is connected with the end w, and the other branch is connected with a transconductance operational amplifier U3Is connected with a transconductance operational amplifier U3The x end of the capacitor is used as an input end B of a magnetic flux control type memcapacitor equivalent circuit, and a transconductance operational amplifier U3Z terminal and transconductance operational amplifier U2Is connected to a transconductance operational amplifier U2Is grounded, a transconductance operational amplifier U2P-terminal open-circuit, transconductance operational amplifier U2X terminal of and analog multiplier U5X of1At least one capacitor is connected in series on a connecting circuit of the end, the input end A of the magnetic flux control type memcapacitor equivalent circuit is divided into two branches, one branch is communicated with a transconductance operational amplifier U1The other branch is connected with a transconductance operational amplifier U2And analog multiplier U5On the connection line, an analog multiplier U5X of2、y1And the z end is connected to the same node and then grounded, the input end A and the input end B are respectively and electrically connected with the controller, and the working frequency of the input end A and the input end B is more than 100 kHz.
Further, the transconductance operational amplifier U1A capacitor C is connected in series on the grounding circuit of the z end2。
Further, the transconductance operational amplifier U1X terminal of (2) is connected in series with a resistor R2And split into two branches.
Further, the transconductance operational amplifier U2X terminal of and analog multiplier U5X of1A capacitor C is connected in series on the connecting line of the end1。
Further, the input end A is connected with a transconductance operational amplifier U2And analog multiplier U5A branch on the connection line, which branches into two branches, one of which is connected to the analog multiplier U5X of1End connected and the other branch passes throughOver capacitance C1And transconductance operational amplifier U2Is connected to the x-terminal.
A control method applied to the magnetic flux control type memcapacitor equivalent circuit runs from the following steps S1 to S5 to match parameters in the magnetic flux control type memcapacitor equivalent circuit:
step S1, obtaining the current through the transconductance operational amplifier U based on the characteristics of the transconductance operational amplifier1X terminal of and analog multiplier U5Current value J on the w-terminal connection line of1；
Step S2, substituting the current value J1Calculating transconductance operational amplifier U1Z terminal and capacitor C2Voltage value J between2；
Step S3, substituting the voltage value J2Calculating transconductance operational amplifier U3Y terminal voltage value J3；
Step S4, substituting the voltage value J3The voltage V between the input terminal A and the input terminal B is obtainedABAnd find the voltage VAB(t) an expression;
step S5, passing through algorithm
Figure BDA0002951890400000031
To obtain the reciprocal Q of the memcapacitor value of the magnetic flux control type memcapacitor equivalent circuitm -1And finishing the operation, wherein the current value of the input end A is calculated and converted into the charge value qm(t)。
Further, the step S1 is specifically: by algorithm
Figure BDA0002951890400000032
To find the current flowing through the resistor R2Current i of2(t)，
Wherein i2(t) is a flow resistance R2Current value of i3(t) is a slave transconductance operational amplifier U1Flows into the capacitor C from the z terminal2Current value of r2Is a resistance R2Resistance value of V4(t) is the x terminal of the transconductance operational amplifier U1 and the resistor R2Value of voltage between, V5(t) is an analog multiplier U5Voltage value of w terminal, VABAnd (t) is the voltage value between the input end A and the input end B.
Further, the step S2 is specifically: by algorithm
Figure BDA0002951890400000033
Obtaining transconductance operational amplifier U1Z terminal and capacitor C2Voltage V between3(t)，
Wherein i3To slave transconductance operational amplifier U1Flows into the capacitor C from the z terminal2Current value of c2Is a capacitor C2The capacitance value of (a) is set,
Figure BDA0002951890400000034
is the voltage V between the input terminal A and the input terminal BAB(t) integration over time.
Further, the step S3 is specifically: by algorithm
Figure BDA0002951890400000035
And the voltage value V obtained in step S23(t) to obtain a transconductance operational amplifier U3Voltage value of y terminal of
Figure BDA0002951890400000036
Figure BDA0002951890400000037
Wherein, V1(t) is the voltage value of input terminal A, Vx1(t) is an analog multiplier U5X of1Voltage value of terminal, Vx2(t) is an analog multiplier U5X of2Voltage value of terminal, Vy1(t) is an analog multiplier U5Y of (A) to (B)1Voltage value of terminal, Vy2(t) is an analog multiplier U5Y of (A) to (B)2The voltage value of the terminal.
Further, the step S5 is specifically: by pair algorithm
Figure BDA00029518904000000316
Is subjected to integral transformation algorithm
Figure BDA0002951890400000039
General algorithm
Figure BDA00029518904000000310
And obtained in step S3
Figure BDA00029518904000000311
Substitution algorithm VAB(t)＝V1(t)-v2(t) determining the voltage V between input A and input BABExpression of (t)
Figure BDA00029518904000000315
Figure BDA00029518904000000313
Definition of Qm -1If memory is reciprocal of the capacitance value, then
Figure BDA00029518904000000314
Wherein, c1Is a capacitor C1The capacitance value of (2).
Has the advantages that:
the invention provides a magnetic flux control type memcapacitor equivalent circuit which is implemented by simulating a multiplier U5The magnetic flux control type memory capacitor equivalent circuit adopts a floating terminal design, so that the magnetic flux control type memory capacitor equivalent circuit can be used as an independent memory capacitor to be connected with other circuit devices for use, can serve as a memory capacitor in the circuit, and can be used for researching the subsequent application of the memory capacitor. The magnetic flux control type memcapacitor equivalent circuit can simulate the hysteresis characteristic of the memcapacitor in a circuit with the frequency of more than 100 kHz.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic structural diagram of an equivalent circuit of a flux-controlled memcapacitor according to the present invention;
FIG. 2 is a simulation diagram of the magnetic flux control type memcapacitor equivalent circuit during operation;
FIG. 3 is a schematic structural diagram of an electronic device according to the present invention;
fig. 4 is a schematic structural diagram of a computer-readable storage medium according to the present invention.
Description of reference numerals: 21-a processor; 22-a memory; 23-storage space; 24-program code; 31-program code.
Detailed Description
The invention is further described with reference to the following examples.
Referring to fig. 1, the magnetic flux control type memcapacitor equivalent circuit of the present embodiment includes a transconductance operational amplifier and an analog multiplier U5A transconductance operational amplifier with the model number AD844, a resistor and a capacitor, wherein, the analog multiplier U5Is AD633, the transconductance operational amplifier is provided with three transconductance operational amplifiers U1Transconductance operational amplifier U2Transconductance operational amplifier U3Wherein, the transconductance operational amplifier U1P terminal of and analog multiplier U5Y of (A) to (B)2End-connected, transconductance operational amplifier U1Z terminal of (C)2Rear grounded transconductance operational amplifier U1X terminal and resistor R2After being connected in series, the signal is divided into two branches, wherein one branch is connected with an analog multiplier U5Is connected with the end w of the cross-overLead operational amplifier U3Is connected with a transconductance operational amplifier U3The x end of the capacitor is used as the input end B of the equivalent circuit of the magnetic flux control type memcapacitor of the embodiment, and the transconductance operational amplifier U3Z terminal and transconductance operational amplifier U2Is connected to a transconductance operational amplifier U2Is grounded, a transconductance operational amplifier U2P-terminal open-circuit, transconductance operational amplifier U2X terminal and capacitor C1Connected in series with an analog multiplier U5X of1The input end a of the magnetic flux control type memcapacitor equivalent circuit of the embodiment is divided into two branches, wherein one branch is communicated with a transconductance operational amplifier U1The other branch is communicated with a capacitor C1And analog multiplier U5X of1Terminal supply line, analog multiplier U5X of2、y1And the z end is connected to the same node and then grounded.
Into a transconductance operational amplifier U2The current of the x terminal is the current i1Through a resistance R2Is a current i2From a transconductance operational amplifier U1Flows into the capacitor C from the z terminal2Is a current i3From a transconductance operational amplifier U3Z-terminal of (1) a transconductance operational amplifier U2The current at the z-terminal of (1) is a current i4From input A, flows into transconductance operational amplifier U1The current at the y terminal of (1) is a current imAt the same time, with a current imThe input current, voltage v, of the equivalent circuit of the magnetic flux control memcapacitor of this example1Is the voltage of input terminal B, voltage v2Is the voltage at input terminal A, and the voltage between input terminal B and input terminal A is the voltage VABTransconductance operational amplifier U1Z terminal and capacitor C2Voltage between is voltage V3Transconductance operational amplifier U1X terminal and resistor R2Voltage between is voltage V4Analog multiplier U5Has a voltage of V at the w terminal5。
In order to complete the parameter setting of the magnetic flux control type memcapacitor equivalent circuit of the embodiment, the memcapacitor equivalent circuit further comprises a controller, and the controller is electrically connected with the input end A and the input end B respectively.
Based on the characteristics of the transconductance operational amplifier, an x end in the transconductance operational amplifier is an inverting input end of the transconductance operational amplifier, a y end is a homodromous input end of the transconductance operational amplifier, and the current value and the voltage value between the x end and the y end of the transconductance operational amplifier are equal; and the p end and the z end of the transconductance operational amplifier are used as output ends of the transconductance operational amplifier, and the current value and the voltage value between the p end and the z end are equal.
Based on the above hardware structure of the magnetic flux control type memcapacitor equivalent circuit of the present embodiment, the following steps S1 to S5 are executed to match parameter settings of the memcapacitor:
step S1, obtaining a flow resistance R2Is a current i2(t)；
In particular, based on the characteristics of the transconductance operational amplifier, V5(t)＝V2(t)，V4(t)＝V1(t)，VAB(t)＝V1(t)-V2(t) by the formula
Figure BDA0002951890400000051
To obtain the current flowing into the transconductance operational amplifier U3And an analog multiplier U5Medium current i2(t)。
Step S2, obtaining a transconductance operational amplifier U1Z terminal and capacitor C2Voltage V3(t) in between;
in particular, based on the characteristics i of the transconductance operational amplifier3(t)＝i2(t), therefore, can be determined according to the formula
Figure BDA0002951890400000052
Figure BDA0002951890400000053
To obtain a transconductance operational amplifier U1Z terminal and capacitor C2Voltage V between3(t) wherein (a) in (a),
Figure BDA0002951890400000054
is a voltage VAB(t) integral value over time, c2Is a capacitor C2The capacitance value of (2).
Step S3, obtaining a transconductance operational amplifier U3Voltage V at terminal y2(t)；
In particular, based on an analog multiplier U5Characteristic of (a), x thereof1End and y2The end is an input end, the w end is an output end, namely, the formula can be passed
Figure BDA0002951890400000055
To obtain an analog multiplier U5Due to the voltage VW＝V5(t) and thus can be transformed by the transformation formula
Figure BDA0002951890400000061
And the voltage V obtained in step S23(t) is calculated to obtain
Figure BDA0002951890400000062
Step S4, obtaining input voltage VABA relation with a circuit;
in particular, according to formula VAB(t)＝V1(t)-V2(t) and the voltage V obtained in step S32(t) is calculated to obtain
Figure BDA0002951890400000063
In step S5, the reciprocal Q of the memcapacitor value of the equivalent circuit of the flux-controlled memcapacitor of the present embodiment is obtainedm -1；
In particular, since the operational transconductance amplifier U2The y-terminal of (1) is grounded, so the current value and the voltage value are zero, and the transconductance operational amplifier U2Has a current following characteristic, so that the current im(t) is im(t)＝i1(t)＝i4(t) and a transconductance operational amplifier U2The voltage value of the x-terminal is also zero, and the capacitor C1Voltage at both ends is V1-0＝V1. Due to the capacitance C1Voltage V across1And current imAre in the same direction by applying the formula
Figure BDA0002951890400000064
Is integrated on both sides and then transformed into a formula
Figure BDA0002951890400000065
Substituting the formula into that obtained in step S4
Figure BDA0002951890400000066
Definition of Qm -1If memory is reciprocal of the capacitance value, then
Figure BDA0002951890400000067
Figure BDA0002951890400000068
Wherein, C1Is a capacitor C1Capacitance value of qmIs imFor the time integral value, alpha is the change rate of the reciprocal of the memory capacity value, and beta is the initial value of the reciprocal of the memory capacity value.
After the parameters in the magnetic flux control type memcapacitor equivalent circuit are matched through the steps S1 to S5, the memcapacitor can be directly simulated for use, the input end A and the input end B are connected to an external circuit for use, the magnetic flux control type memcapacitor equivalent circuit is used for simulating the function of the memcapacitor for use, the effect of flexible connection and use with the external circuit is achieved, the circuit with the frequency of more than 100kHz can be connected for operation, the problem that the existing memcapacitor circuit cannot be used in a larger frequency is overcome, the magnetic flux control type memcapacitor equivalent circuit of the embodiment can realize the function of the memcapacitor by using fewer elements, and therefore power consumption of the magnetic flux control type memcapacitor equivalent circuit of the embodiment in operation is reduced.
In addition, in order to verify the correctness of the equivalent circuit of the magnetic flux control type memcapacitor in the embodiment, the applicant makes the following experiments to verify that:
now known Algorithm VAB＝U0sin(2πf)＝U0sin (ω t) and algorithm
Figure BDA0002951890400000069
The two algorithms are first transformed as follows,
according to algorithm VAB＝U0sin(2πf)＝U0sin (ω t) to determine the voltage V between input A and input BABWherein, U0Is the amplitude of the sinusoidal voltage and,
Figure BDA00029518904000000610
is a VABIntegral value over time, and thus, may be based on an algorithm
Figure BDA00029518904000000611
Figure BDA00029518904000000612
To obtain
Figure BDA00029518904000000613
So that the magnetic flux of the memory container can be known
Figure BDA00029518904000000614
Amplitude of and
Figure BDA00029518904000000615
in a proportional relationship.
According to an algorithm
Figure BDA0002951890400000071
The analysis was carried out when the voltage V between the input terminals A, BABAs the frequency between the input terminals a, B increases while the amplitude of (B) remains constant, the magnetic flux correspondingly increases
Figure BDA0002951890400000078
The variation range of the amplitude of the memory capacity value is reduced, so that the inverse Q of the memory capacity value is obtainedm -1Also reduces the variation range of (A) and gradually approaches to a fixed value beta, and the algorithm is used for
Figure BDA0002951890400000073
Available charge qmAlso varies withQm -1Is reduced by the reduction of the variation range of (C), then the voltage V is appliedABAnd electric charge qmFormed of VAB-qmIn the hysteresis loop, the phenomenon that the hysteresis loop shows an inward contraction trend along with the increase of the frequency is shown.
In order to verify the above analysis, the applicant performs a simulation experiment using Pspice software according to the transformed formula, wherein the simulation experiment parameters are as follows:
the multiplier AD633 and the power taking ends of all the transconductance operational amplifiers AD844 are connected with a direct current supply voltage with the amplitude of +/-15V, and the voltage V between the input end A and the input end BABIs a VAB＝2sin(2πf)C1＝1nC2＝10nR2＝1K。
Because some variables to be measured in the magnetic flux control type memcapacitor equivalent circuit are not easy to be detected in the magnetic flux control type memcapacitor equivalent circuit in the embodiment, for the requirement of experimental result analysis, an equivalent substitution mode is adopted below, and measurable data which is in direct proportion to the variables to be measured is equivalently substituted for the variables to be measured. The method is suitable for Pspice software simulation and hardware experiment circuits.
For the memcapacitor simulated in this example, the charge qmFor current i flowing through memcapacitormIntegration over time, i can be obtained from the current following characteristic of the transconductance operational amplifier AD844m(t)＝i1(t) and the capacitance C is obtained from the voltage following characteristic of the transconductance operational amplifier AD8441Voltage at both ends is V1(t) and a capacitance C1The integration function in the circuit can be obtained
Figure BDA0002951890400000074
Namely, it is
Figure BDA0002951890400000075
It can be seen that q ismAnd V1(t) is in direct proportion, and V can be used1(t) equivalent substitution for qmIs calculated. And VABThe voltage between the input terminal a and the input terminal B in the equivalent circuit of the magnetic flux control type memcapacitor of this embodiment can be represented as VAB＝V4(t)-V5(t) and the difference is the resistance R2Voltage across
Figure BDA0002951890400000076
Can be used
Figure BDA0002951890400000077
Equivalent substitution of VABIs calculated.
At frequencies of 50kHz, 70kHz and 90kHz between the input terminal A and the input terminal B, respectively, the voltage V is appliedABAnd is equivalent to the charge qmVoltage V of1At VAB-V1The hysteresis loops formed by the coordinates are shown in fig. 2, and important characteristics of the memcapacitor can be obtained by comparing the hysteresis loops at the frequencies of 50kHz, 70kHz and 90kHz respectively: memory capacitance reciprocal Qm -1At VAB-V1(i.e., V)AB-qm) A hysteresis loop shaped like a diagonal '8' is kept in coordinates, and the voltage amplitude is kept constant along with the increase of the frequency and is equivalent to the charge qmVoltage V of1Is reduced, represents Qm -1The slope of the connecting line of the upper point of the magnetic hysteresis loop and the origin is gradually reduced, the magnetic hysteresis loop is inwardly reduced, and the simulation result is consistent with the characteristics of the memcapacitor, so that the correctness of the magnetic flux control type memcapacitor equivalent circuit provided by the invention is proved.
In order to further prove the correctness and the effectiveness of the magnetic flux control type memcapacitor equivalent circuit of the embodiment, the applicant also constructs a hardware experiment circuit of the magnetic flux control type memcapacitor equivalent circuit according to parameter values in the Pspice simulation circuit, and uses a signal generator AFG-2225 to be connected with two ends of the hardware experiment circuit and used for transmitting a sinusoidal voltage signal to the hardware experiment circuit, wherein the amplitude of the sinusoidal voltage is U0The results were recorded using an oscilloscope GDS-2102A at 0.9V and, after the test, at a voltage VABAnd electric charge qmAt VAB-qmHysteresis graphs with frequencies f of 50kHz, 70kHz and 90kHz are obtained in coordinates respectively (data of a hardware experimental graph example needs three different color marksIt can be clearly distinguished, and therefore, no illustration is given here), it can be seen that the hardware experimental circuit of the magnetic flux control type memcapacitor equivalent circuit of the present embodiment is consistent with the effect achieved by the simulation circuit thereof, that is, the magnetic flux control type memcapacitor equivalent circuit of the present embodiment is correct and effective.
It should be noted that:
the method of the present embodiment may be implemented by a method that is converted into program steps and apparatuses that can be stored in a computer storage medium and invoked and executed by a controller.
The algorithms and displays presented herein are not inherently related to any particular computer, virtual machine, or other apparatus nor is the particular language used to disclose the best mode of the invention.
In the description provided herein, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that the invention as claimed requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments.
The various component embodiments of the invention may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof. It will be appreciated by those skilled in the art that a microprocessor or Digital Signal Processor (DSP) may be used in practice to implement some or all of the functions of some or all of the components of the apparatus for detecting a wearing state of an electronic device according to embodiments of the present invention. The present invention may also be embodied as apparatus or device programs (e.g., computer programs and computer program products) for performing a portion or all of the methods described herein. Such programs implementing the present invention may be stored on computer-readable media or may be in the form of one or more signals. Such a signal may be downloaded from an internet website or provided on a carrier signal or in any other form.
For example, fig. 3 shows a schematic structural diagram of an electronic device according to an embodiment of the invention. The electronic device conventionally comprises a processor 21 and a memory 22 arranged to store computer-executable instructions (program code). The memory 22 may be an electronic memory such as a flash memory, an EEPROM (electrically erasable programmable read only memory), an EPROM, a hard disk, or a ROM. The memory 22 has a storage space 23 storing program code 24 for performing any of the method steps in the embodiments. For example, the storage space 23 for the program code may comprise respective program codes 24 for implementing respective steps in the above method. The program code can be read from or written to one or more computer program products. These computer program products comprise a program code carrier such as a hard disk, a Compact Disc (CD), a memory card or a floppy disk. Such a computer program product is typically a computer readable storage medium such as described in fig. 4. The computer readable storage medium may have memory segments, memory spaces, etc. arranged similarly to the memory 22 in the electronic device of fig. 3. The program code may be compressed, for example, in a suitable form. In general, the memory unit stores program code 31 for performing the steps of the method according to the invention, i.e. program code readable by a processor such as 21, which when run by an electronic device causes the electronic device to perform the individual steps of the method described above.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.

Claims (10)

1. A magnetic flux control type memcapacitor equivalent circuit is characterized by comprising a controller, a transconductance operational amplifier and an analog multiplier U5A plurality of resistors and capacitors, a transconductance operational amplifier is arranged in the transconductance operational amplifier U1Transconductance operational amplifier U2Transconductance operational amplifier U3Transconductance operational amplifier U1P terminal of and analog multiplier U5Y of (A) to (B)2End-connected, transconductance operational amplifier U1The grounding circuit of the z end is connected with at least one capacitor in series, and a transconductance operational amplifier U1The x end of the analog multiplier is connected with at least one resistor in series and then is divided into two branches, wherein one branch is connected with the analog multiplier U5Is connected with the end w, and the other branch is connected with a transconductance operational amplifier U3Is connected with a transconductance operational amplifier U3The x end of the capacitor is used as an input end B of a magnetic flux control type memcapacitor equivalent circuit, and a transconductance operational amplifier U3Z terminal and transconductance operational amplifier U2Is connected to a transconductance operational amplifier U2Is grounded, a transconductance operational amplifier U2P-terminal open-circuit, transconductance operational amplifier U2X terminal of and analog multiplier U5X of1At least one capacitor is connected in series on a connecting circuit of the end, the input end A of the magnetic flux control type memcapacitor equivalent circuit is divided into two branches, one branch is communicated with a transconductance operational amplifier U1The other branch is connected with a transconductance operational amplifier U2And analog multiplier U5On the connection line, an analog multiplier U5X of2、y1And the z end is connected to the same node and then grounded, the input end A and the input end B are respectively and electrically connected with the controller, and the working frequency of the input end A and the input end B is more than 100 kHz.
2. The flux-controlled memcapacitor equivalent circuit according to claim 1, wherein the transconductance operational amplifier U1A capacitor C is connected in series on the grounding circuit of the z end2。
3. Magnetic flux according to claim 2The control type memcapacitor equivalent circuit is characterized in that the transconductance operational amplifier U1X terminal of (2) is connected in series with a resistor R2And split into two branches.
4. The flux-controlled memcapacitor equivalent circuit according to claim 3, wherein the transconductance operational amplifier U2X terminal of and analog multiplier U5X of1A capacitor C is connected in series on the connecting line of the end1。
5. The magnetic flux control type memcapacitor equivalent circuit as claimed in claim 4, wherein the input end A is connected with a transconductance operational amplifier U2And analog multiplier U5A branch on the connection line, which branches into two branches, one of which is connected to the analog multiplier U5X of1End connection, the other branch passing through capacitor C1And transconductance operational amplifier U2Is connected to the x-terminal.
6. A control method applied to the flux-controlled memcapacitor equivalent circuit of any one of claims 1-5, wherein the following steps S1-S5 are performed to match parameters in the flux-controlled memcapacitor equivalent circuit:
step S1, obtaining the current through the transconductance operational amplifier U based on the characteristics of the transconductance operational amplifier1X terminal of and analog multiplier U5Current value J on the w-terminal connection line of1；
Step S2, substituting the current value J1Calculating transconductance operational amplifier U1Z terminal and capacitor C2Voltage value J between2；
Step S3, substituting the voltage value J2Calculating transconductance operational amplifier U3Y terminal voltage value J3；
Step S4, substituting the voltage value J3The voltage V between the input terminal A and the input terminal B is obtainedABAnd find the voltage VAB(t) an expression;
step S5, passing through algorithm
Figure FDA0002951890390000011
To obtain the reciprocal Q of the memcapacitor value of the magnetic flux control type memcapacitor equivalent circuitm -1And finishing the operation, wherein the current value of the input end A is calculated and converted into the charge value qm(t)。
7. The method for controlling the equivalent circuit of the magnetic flux control type memcapacitor according to claim 6, wherein the step S1 is specifically as follows: by algorithm
Figure FDA0002951890390000021
To find the current flowing through the resistor R2Current i of2(t)，
Wherein i2(t) is a flow resistance R2Current value of i3(t) is a slave transconductance operational amplifier U1Flows into the capacitor C from the z terminal2Current value of r2Is a resistance R2Resistance value of V4(t) is the x terminal of the transconductance operational amplifier U1 and the resistor R2Value of voltage between, V5(t) is an analog multiplier U5Voltage value of w terminal, VABAnd (t) is the voltage value between the input end A and the input end B.
8. The method for controlling the equivalent circuit of the magnetic flux control type memcapacitor according to claim 7, wherein the step S2 is specifically as follows: by algorithm
Figure FDA0002951890390000022
Obtaining transconductance operational amplifier U1Z terminal and capacitor C2Voltage V between3(t)，
Wherein i3To slave transconductance operational amplifier U1Flows into the capacitor C from the z terminal2Current value of c2Is a capacitor C2The capacitance value of (a) is set,
Figure FDA0002951890390000023
to be transportedVoltage V between input terminal A and input terminal BAB(t) integration over time.
9. The flux-controlled memcapacitor equivalent circuit according to claim 8, wherein the step S3 is specifically as follows: by algorithm
Figure FDA0002951890390000024
And the voltage value V obtained in step S23(t) to obtain a transconductance operational amplifier U3Voltage value of y terminal of
Figure FDA0002951890390000025
Wherein, V1(t) is the voltage value of input terminal A, Vx1(t) is an analog multiplier U5X of1Voltage value of terminal, Vx2(t) is an analog multiplier U5X of2Voltage value of terminal, Vy1(t) is an analog multiplier U5Y of (A) to (B)1Voltage value of terminal, Vy2(t) is an analog multiplier U5Y of (A) to (B)2The voltage value of the terminal.
10. The magnetic flux control type memcapacitor equivalent circuit according to claim 9, wherein the step S5 is specifically as follows: by pair algorithm
Figure FDA0002951890390000026
Is subjected to integral transformation algorithm
Figure FDA0002951890390000027
General algorithm
Figure FDA0002951890390000028
And obtained in step S3
Figure FDA0002951890390000029
Substitution algorithm VAB(t)＝V1(t)-v2(t) obtainingObtain the voltage V between the input terminal A and the input terminal BABExpression of (t)
Figure FDA00029518903900000210
Definition of Qm -1If memory is reciprocal of the capacitance value, then
Figure FDA00029518903900000211
Wherein, c1Is a capacitor C1The capacitance value of (2).
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