CN103313509A - Metal-based conducting circuit board and manufacturing method thereof - Google Patents
Metal-based conducting circuit board and manufacturing method thereof Download PDFInfo
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- CN103313509A CN103313509A CN2013101462766A CN201310146276A CN103313509A CN 103313509 A CN103313509 A CN 103313509A CN 2013101462766 A CN2013101462766 A CN 2013101462766A CN 201310146276 A CN201310146276 A CN 201310146276A CN 103313509 A CN103313509 A CN 103313509A
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Abstract
The invention relates to a printed circuit board, in particular to a metal-based conducting circuit board applied to a high-power electronic device, which belongs to the technical field of electronic circuits. The printed circuit board comprises a bottom layer, an insulating layer and a conducting layer, wherein the bottom layer is made of metal; the insulating layer is formed on the bottom layer; the insulating layer is made of silicon oxide; and the conducting layer is formed on the insulating layer. In the metal-based conducting circuit board provided by the invention, the silicon oxide insulating layer has high heat resistance and high corrosion resistance, is dense and uniform, and is firmly combined with a substrate, so that the problems of low mechanical strength, difficulty in processing and the like caused by different expansion coefficients among a circuit layer, an insulating conducting layer and a metal base layer can be solved effectively. The thermal conductivity of the silicon oxide insulating layer is higher than general fiber and resin, and a film is dense and uniform, so that the heat dissipating performance of the metal-based conducting circuit board is more superior.
Description
Technical field
The present invention relates to printed circuit board (PCB), relate in particular to the Metal Substrate conducting wire plate that high-power electronic device uses, belong to the electronic circuit technology field.
Background technology
Heat dissipation problem has become one of pendulum ultimate challenge in face of designers undoubtedly.On the one hand along with PCB also towards the continuous development of high density, high accuracy, small-sized multilayer SMT direction, the installing space of components and parts significantly reduces; Power requirement to power component is more and more higher on the other hand.The high-power more heat that produces inevitably in little space is assembled, and causes the components and parts electric property to descend even damage.Previous solution is to adopt cooled hardware or the heat radiation of ceramic functional block.The former itself needs big quantity space, and the latter is more because not good (the general pcb substrate of the thermal coefficient of expansion (TCE) of pottery is little a lot) of heat coupling, temperature in repeated multiple times becomes solder joint place in the circulation because stress easily forms crackle or comes off, complete machine was lost efficacy, and, along with the pin of electronic devices and components more and more participates in heat radiation, require conductive layer also will have good heat-sinking capability.Therefore, along with packaging density and to the raising of reliability requirement, should consider to select for use the better base material of heat conductivility and heat-conducting layer.The cooling effect of components and parts pin is not considered in the substrate design that traditional thermoelectricity separates basically, and new wiring board must adapt to SMT design, rapid heat dissipation, high reliability and durability fully, less electromagnetic shielding, flexible design, total cost is low.
Present electronic equipment generally uses the FR4 printed substrate, for electronic equipment, influences a working temperature that key factor is exactly components and parts of its reliability index.According to the pertinent literature record, the failure rate of electronic equipment has 55% to be to be caused by the setting of temperature above electronic component.Temperature is different to the performance impact of all kinds components and parts, and in common components and parts, temperature has the greatest impact for semiconductor device.The semiconductor device of widely applying in the electronic equipment such as integrated transporting discharging, TTL logic chip, various power supply voltage stabilizing chips etc., its basic composition unit all are the P-N knot, and are very responsive to variations in temperature.10 ℃ of the every risings of temperature, reverse leakage current will double.This with variation of temperature, will directly cause the product normal working point to drift about, maximum power dissipation descends.Temperature also has certain influence to the performance parameter of Resistor-Capacitor Unit.When temperature raises, can cause thermal noise aggravation in the resistance, resistance departs from nominal value, allows degradation under the dissipation power.Influence to capacitor is that capacitance and dielectric loss angle parameters such as (power factor (PF)s) are changed, thereby causes the parameter changes such as capacity-resistance time constant in the circuit, influences the reliability of whole electric equipment.In order to reduce temperature to the performance impact of components and parts, must use the good wiring board of heat radiation.Present most popular have FR4 wiring board and common metal substrate, by contrast, the printed substrate during these use has following shortcoming: 1: heat conductivility is poor, and interface resistance is bigger; 2: poor processability.
Summary of the invention
The technical issues that need to address of the present invention are that the heat-sinking capability of traditional Metal Substrate conducting wire plate is not good.Therefore, provide a kind of Metal Substrate conducting wire plate, it has good heat-conducting, and the manufacture method of a kind of Metal Substrate conducting wire plate also is provided.The technical scheme that adopts is:
A kind of Metal Substrate conducting wire plate includes bottom, insulating barrier and conductive layer, and it is characterized in that: the material of described bottom is metal; Bottom is provided with insulating barrier, and the material of described insulating barrier is silica; Insulating barrier is provided with conductive layer.
In nature, silicon is the good nonmetalloid of electric conductivity, and the change thing silicon dioxide of silicon then is the insulating material of function admirable.The thickness of silica membrane is when l00 μ m, and its surface insulation resistance can reach more than the 100 M Ω, and its sheet resistance of surface treated substrate is very big, and static is difficult to pile up, and prevents the responsive diode of electrostatic breakdown.Simultaneously, the thermal conductivity of silica membrane can reach 10w/mk, be higher than general fiber and resin far away, and the film quality is evenly fine and close, thermal endurance and corrosion resistance are good, and its interface resistance is much smaller than common FR4 interfacial dielectric layer thermal resistance, and large power semiconductor device is used this Metal Substrate conducting wire plate, have effective heat dissipation channel, can be with the very fast derivation of the heat of components and parts pin.Therefore, adopt silica as insulating barrier, the effect of can more effectively reach insulation, conducting heat.In addition, the thermal endurance of insulating layer of silicon oxide and corrosion resistance are good, fine and close evenly be combined firmly with substrate, can overcome problems such as causing low, the difficult processing of mechanical strength because of the coefficients of expansion different between circuit layer, insulating heat-conductive layer and the metal-based layer effectively.
Further, on the above-mentioned Metal Substrate conducting wire plate, the thickness of described insulating barrier is 20～500 μ m preferably, insulation resistance 〉=1OOM Ω.
Further, the metal material of bottom employing can be aluminium, copper, silver and some alloy materials, for example aluminium alloy, magnadure etc.
Further, above-mentioned conductive layer electric conducting material is silver, copper, gold or palladium or other alloy materials.
Further, can also include solder mask on the above-mentioned conductive layer.
In addition, the present invention also provides the manufacture method of a kind of above-mentioned Metal Substrate conducting wire plate, comprises the steps:
S1: get bottom, make insulating layer of silicon oxide in bottom surface;
S2: conductive layer on surface of insulating layer covers;
S3: make solder mask at conductive layer.
In the above-mentioned S1 step, can adopt several different methods to form insulating layer of silicon oxide in bottom surface, for example: can be by the method for evaporation or spraying, also can form insulating layer of silicon oxide at bottom by sol-gel process, sol-gel process has technical maturity, method is simple, low cost and other advantages, the insulating layer of silicon oxide controllable thickness that manufactures is evenly distributed.
In the above-mentioned S2 step, conductive layer can adopt several different methods to be made on the insulating barrier, and arranges the conducting wire.The manufacture method of conductive layer and conducting wire can use the mask version as protection, and printed conductive metal slurry oven dry thereon forms the conducting wire; Also can take under the prerequisite of topical application protecting film the conducting wire that directly makes by sputter or evaporation at the position of not doing to protect.
Again further, before step S1, can also polish, clean by bottom, with spots such as the oil of removing bottom surface, water, and obtain the smooth workpiece planarization of cleaning.
The preferred white oil material of solder mask can adopt methods such as printing, spraying to be manufactured on conductive layer and surface of insulating layer.
As preferable methods, above-mentioned preparation process adopts sol-gel process, and concrete steps are: getting concentration is the sodium silicate solution of 0.05～0.25mol/L, regulates pH to 4～8, stirs, and gets colloidal sol; Described bottom 1 is placed colloidal sol, flood and lift taking-up, drying after 5～9 hours; Heat treatment is 2～9 hours under 300～700 ℃ of temperature.
Technique effect
Metal Substrate provided by the invention conducting wire plate, adopted at the metal material of bottom and made insulating layer of silicon oxide, make again and go up conductive layer, the thermal endurance of insulating layer of silicon oxide and corrosion resistance are good, evenly fine and close, be combined firmly with substrate, can overcome effectively because of the coefficients of expansion different between circuit layer, insulating heat-conductive layer and the metal-based layer and cause that mechanical strength is low, be difficult for problem such as processing.The thermal conductivity of silica membrane is higher than general fiber and resin, and the film quality is evenly fine and close, makes that the heat dispersion of this Metal Substrate conducting wire plate is more excellent.
Description of drawings
Fig. 1 is the structural representation of the Metal Substrate conducting wire plate of single face.
Fig. 2 is the structural representation of two-sided Metal Substrate conducting wire plate.
Wherein, the 1st, bottom; The 2nd, insulating barrier; The 3rd, conductive layer.
Embodiment
As depicted in figs. 1 and 2, a kind of Metal Substrate conducting wire plate includes bottom 1, insulating barrier 2 and conductive layer 3, and the material of described bottom 1 is metal; Bottom 1 is provided with insulating barrier 2, and the material of described insulating barrier 2 is silica; Insulating barrier 2 is provided with conductive layer 3.
Metal Substrate conducting wire plate in the present embodiment is made by the following method:
At first, get the bottom 1 of aluminium matter, polish, again with surfactant solution and the clear shallow bottom of water difference 1 surface, the spot on removal bottom 1 surface, dust etc., and make bottom 1 smooth smooth.
Next, adopt the silicon oxide particle of average grain diameter 250 μ m, use the method for vacuum evaporation to form silicon oxide film at bottom 1, under 1200 ℃, carried out sintering 1 hour again, make the silicon oxide particle vitrifying, can obtain having the aluminium sheet 1 of insulating layer of silicon oxide 2.
Again next, the conductive layer of directly making at the aluminium sheet 1 that has insulating layer of silicon oxide by the method for sputter or evaporation 3.In the present embodiment, adopt copper as the material of conductive layer 3.
At last, make solder mask 4 at conductive layer 3 and get final product, the material of solder mask is selected white oil herein.
The thickness of the insulating barrier of the Metal Substrate conducting wire plate that is made into is 100 μ m, insulation resistance 15OM Ω.Also can pass through the adjusting process parameter, make the thickness of insulating barrier at 20～500 μ m, and insulation resistance be more than 100M Ω.
Also can make the Metal Substrate conducting wire plate with double-sided insulation layer and conductive layer as shown in Figure 2.Preliminary treatment is carried out on two surfaces up and down for metal substrate in the manufacturing process respectively, and further processing and fabricating heat conductive insulating layer, conductive layer and conducting wire.
As depicted in figs. 1 and 2, a kind of Metal Substrate conducting wire plate includes bottom 1, insulating barrier 2 and conductive layer 3, and the material of described bottom 1 is metal; Bottom 1 is provided with insulating barrier 2, and the material of described insulating barrier 2 is silica; Insulating barrier 2 is provided with conductive layer 3.
Metal Substrate conducting wire plate in the present embodiment is made by the following method:
At first, get the bottom 1 of aluminium matter, polish, again with surfactant solution and the clear shallow bottom of water difference 1 surface, the spot on removal bottom 1 surface, dust etc., and make bottom 1 smooth smooth.
Next, use the method for airless spraying to form silicon oxide film at bottom 1, carry out sintering again, can obtain having the aluminium sheet 1 of insulating layer of silicon oxide 2.
Again next, the conductive layer of directly making at the aluminium sheet 1 that has insulating layer of silicon oxide by the method for sputter or evaporation 3.In the present embodiment, adopt copper as the material of conductive layer 3.
At last, make solder mask 4 at conductive layer 3 and get final product, the material of solder mask is selected white oil herein.
The thickness of the insulating barrier of the Metal Substrate conducting wire plate that is made into is 100 μ m, insulation resistance 15OM Ω.Also can pass through the adjusting process parameter, make the thickness of insulating barrier at 20～500 μ m, and insulation resistance be more than 100M Ω.
Also can make the Metal Substrate conducting wire plate with double-sided insulation layer and conductive layer as shown in Figure 2.Preliminary treatment is carried out on two surfaces up and down for metal substrate in the manufacturing process respectively, and further processing and fabricating heat conductive insulating layer, conductive layer and conducting wire.
?
The making step of a kind of Metal Substrate conducting wire plate:
At first, get the bottom 1 of aluminium matter, polish, again with surfactant solution and the clear shallow bottom of water difference 1 surface, the spot on removal bottom 1 surface, dust etc., and make bottom smooth smooth.
Next, get sodium silicate solution (concentration is 0.25mol/L), with acid for adjusting pH to 4～8, stir, get colloidal sol; The above-mentioned bottom that obtains 1 is placed colloidal sol, flood and lift taking-up, drying after 6 hours; Again at 500 ℃, heat treatment 4 hours.
Again next, the conducting wire layer of directly making at the aluminium sheet 1 that has insulating layer of silicon oxide by the method for sputter or evaporation 3.In the present embodiment, adopt silver as the material of conductive layer 3.
At last, make solder mask 4 at conductive layer 3 and get final product, the material of solder mask is selected white oil herein.
The thickness of the insulating barrier 3 of the Metal Substrate conducting wire plate for preparing is 200 μ m, insulation resistance 200 M Ω.
The making step of a kind of Metal Substrate conducting wire plate, be with the difference of embodiment 3: sodium silicate solution concentration is 0.05mol/L, and the dip time of bottom in colloidal sol is 5 hours, and heat treatment is 2 hours under 700 ℃ of temperature.The material of conductive layer adopts copper.The thickness of the insulating barrier 3 of the Metal Substrate conducting wire plate for preparing is 20 μ m, insulation resistance 100 M Ω.
Embodiment 5
The making step of a kind of Metal Substrate conducting wire plate, be with the difference of embodiment 3: sodium silicate solution concentration is 0.10mol/L, and the dip time of bottom in colloidal sol is 9 hours, and heat treatment is 9 hours under 300 ℃ of temperature.The material of conductive layer adopts aluminium alloy.The thickness of the insulating barrier 3 of the Metal Substrate conducting wire plate for preparing is 500 μ m, insulation resistance 300 M Ω.
Claims (10)
1. a Metal Substrate conducting wire plate includes bottom, insulating barrier and conductive layer, and it is characterized in that: the material of described bottom is metal; Bottom is provided with insulating barrier, and the material of described insulating barrier is silica; Insulating barrier is provided with conductive layer.
2. Metal Substrate according to claim 1 conducting wire plate is characterized in that: described metal is a kind of in aluminium, copper, silver, aluminium alloy or the magnadure.
3. Metal Substrate according to claim 1 conducting wire plate, it is characterized in that: the thickness of described insulating barrier is 20～500 μ m.
4. Metal Substrate according to claim 1 conducting wire plate is characterized in that: the insulation resistance of described insulating barrier 〉=1OOM Ω.
5. Metal Substrate according to claim 1 conducting wire plate is characterized in that: also include solder mask on the described conductive layer.
6. according to the described Metal Substrate of claim 1 conducting wire plate, it is characterized in that: the material of described conductive layer is copper, gold, gold, palladium or alloy.
7. the manufacture method based on the described Metal Substrate of claim 1 conducting wire plate comprises the steps:
S1: get bottom, make insulating layer of silicon oxide in bottom surface;
S2: conductive layer on surface of insulating layer covers;
S3: make solder mask at conductive layer.
8. the manufacture method of Metal Substrate according to claim 7 conducting wire plate is characterized in that: among the described step S1, make insulating barrier by evaporation, spraying or sol-gel process at bottom.
9. the manufacture method of Metal Substrate according to claim 8 conducting wire plate, it is characterized in that: described sol-gel process is that getting concentration is the sodium silicate solution of 0.05～0.25mol/L, regulates pH to 4～8, stirs, and gets colloidal sol; Described bottom 1 is placed colloidal sol, flood and lift taking-up, drying after 5～9 hours; Heat treatment is 2～9 hours under 300～700 ℃ of temperature.
10. the manufacture method of Metal Substrate according to claim 7 conducting wire plate is characterized in that: among the described step S2, with the method for thick film screen printing or sputter evaporation conductive layer is produced on the insulating barrier.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310146276.6A CN103313509B (en) | 2013-04-24 | 2013-04-24 | A kind of Metal Substrate conducting wire plate and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310146276.6A CN103313509B (en) | 2013-04-24 | 2013-04-24 | A kind of Metal Substrate conducting wire plate and preparation method thereof |
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| CN103313509A true CN103313509A (en) | 2013-09-18 |
| CN103313509B CN103313509B (en) | 2016-08-17 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105530762A (en) * | 2014-09-29 | 2016-04-27 | 深南电路有限公司 | Resistance welding processing method and circuit board |
| CN106048566A (en) * | 2016-05-24 | 2016-10-26 | 常州大学 | Preparation method for LED aluminum substrate and slurry used during aluminum substrate preparing |
| TWI711352B (en) * | 2019-01-15 | 2020-11-21 | 新宸科技股份有限公司 | Conductive board for a display device |
| CN112201407A (en) * | 2020-09-14 | 2021-01-08 | 北京遥感设备研究所 | Method and structure for preparing curved surface circuit on surface of metal structure |
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| CN101076224A (en) * | 2006-05-16 | 2007-11-21 | 南京汉德森科技股份有限公司 | Aluminum-base printing circuit board and its production |
| CN101572999A (en) * | 2008-04-29 | 2009-11-04 | 汉达精密电子(昆山)有限公司 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
| WO2009145109A1 (en) * | 2008-05-29 | 2009-12-03 | 電気化学工業株式会社 | Metal base circuit board |
| CN101919320A (en) * | 2007-08-08 | 2010-12-15 | Ain株式会社 | Method for producing wiring board and wiring board |
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2013
- 2013-04-24 CN CN201310146276.6A patent/CN103313509B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101076224A (en) * | 2006-05-16 | 2007-11-21 | 南京汉德森科技股份有限公司 | Aluminum-base printing circuit board and its production |
| CN101919320A (en) * | 2007-08-08 | 2010-12-15 | Ain株式会社 | Method for producing wiring board and wiring board |
| CN101572999A (en) * | 2008-04-29 | 2009-11-04 | 汉达精密电子(昆山)有限公司 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
| WO2009145109A1 (en) * | 2008-05-29 | 2009-12-03 | 電気化学工業株式会社 | Metal base circuit board |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105530762A (en) * | 2014-09-29 | 2016-04-27 | 深南电路有限公司 | Resistance welding processing method and circuit board |
| CN105530762B (en) * | 2014-09-29 | 2018-08-07 | 深南电路有限公司 | Resistance welding processing method and circuit board |
| CN106048566A (en) * | 2016-05-24 | 2016-10-26 | 常州大学 | Preparation method for LED aluminum substrate and slurry used during aluminum substrate preparing |
| TWI711352B (en) * | 2019-01-15 | 2020-11-21 | 新宸科技股份有限公司 | Conductive board for a display device |
| CN112201407A (en) * | 2020-09-14 | 2021-01-08 | 北京遥感设备研究所 | Method and structure for preparing curved surface circuit on surface of metal structure |
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| CN103313509B (en) | 2016-08-17 |
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