CN103313509B - A kind of Metal Substrate conducting wire plate and preparation method thereof - Google Patents
A kind of Metal Substrate conducting wire plate and preparation method thereof Download PDFInfo
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- CN103313509B CN103313509B CN201310146276.6A CN201310146276A CN103313509B CN 103313509 B CN103313509 B CN 103313509B CN 201310146276 A CN201310146276 A CN 201310146276A CN 103313509 B CN103313509 B CN 103313509B
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- conducting wire
- metal substrate
- wire plate
- insulating barrier
- conductive layer
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Abstract
The present invention relates to printed circuit board (PCB), particularly relate to the Metal Substrate conducting wire plate that high-power electronic device uses, belong to electronic circuit technology field.Printed circuit board (PCB) includes bottom, insulating barrier and conductive layer, and the material of described bottom is metal；Being provided with insulating barrier on bottom, the material of described insulating barrier is silicon oxide；It is provided with conductive layer on the insulating layer.The Metal Substrate conducting wire plate that the present invention provides, the thermostability of insulating layer of silicon oxide and corrosion resistance are good, dense uniform, it is firmly combined with substrate, it is possible to efficiently against causing because of the coefficients of expansion different between circuit layer, thermal insulation layer and metal-based layer, mechanical strength is low, be difficult to the problems such as processing.The thermal conductivity of insulating layer of silicon oxide is higher than general fiber and resin, and thin film quality dense uniform so that the heat dispersion of this Metal Substrate conducting wire plate is more excellent.
Description
Technical field
The present invention relates to printed circuit board (PCB), particularly relate to the Metal Substrate conducting wire plate that high-power electronic device uses, belong to electronic circuit technology field.
Background technology
Heat dissipation problem has become one of pendulum ultimate challenge in face of designers the most.On the one hand along with PCB also towards high density, in high precision, the development in small-sized multilamellar SMT direction, the installing space of components and parts is greatly decreased；More and more higher to the power requirement of power component.Little space is high-power is inevitably generated the gathering of more heat, causes components and parts electric property to decline and even damages.Previous solution is to use cooled hardware or pottery functional device heat radiation.The former itself needs big quantity space, and the latter is more due to thermally matched the best (thermal coefficient of expansion (TCE) the more universal pcb substrate of pottery is much smaller), owing to stress is easily formed crackle or comes off at solder joint in repeated multiple times temperature shock cycle, complete machine is made to lose efficacy, and, along with the pin of electronic devices and components more and more participates in heat radiation, it is desirable to conductive layer also to have good heat-sinking capability.Therefore, along with packaging density and the raising to reliability requirement, it is considered as selecting the more preferable base material of heat conductivility and heat-conducting layer.The substrate design that traditional thermoelectricity separates there is no the cooling effect in view of component's feet, and it is low that new wiring board must adapt to SMT design, rapid heat dissipation, high reliability and durability, less electromagnetic shielding, flexible design, totle drilling cost completely.
Current electronic equipment commonly uses FR4 printed substrate, and for electronic equipment, the key factor affecting its reliability index is exactly the operating temperature of components and parts.Recording according to pertinent literature, the crash rate of electronic equipment has 55% to be to be exceeded the setting of electronic component by temperature to cause.Temperature is different to the performance impact of all kinds components and parts, and in common components and parts, temperature is maximum for the impact of semiconductor device.The semiconductor device such as integrated transporting discharging of extensive application, TTL logic chip, various power supply voltage stabilizing chips etc. in electronic equipment, its basic component units is all P-N junction, very sensitive to variations in temperature.Temperature often raises 10 DEG C, and reverse leakage current will double.This variation with temperature, will result directly in product normal working point and drifts about, and maximum power dissipation declines.The performance parameter of Resistor-Capacitor Unit is also had a certain impact by temperature.When temperature raises, thermal noise aggravation in resistance, resistance deviation nominal value, it is allowed to degradation under dissipated power can be caused.Impact on capacitor is to make the parameter such as capacitance and dielectric loss angle (power factor (PF)) change, thus causes the parameter changes such as the capacity-resistance time constant in circuit, affects the reliability of whole electronic equipment.In order to reduce the temperature performance impact to components and parts, it is necessary to use the wiring board that heat radiation is good.Currently used most widely have FR4 wiring board and common metal substrate, and by contrast, the printed substrate during these use has the disadvantage that: 1: heat conductivility is poor, and interface resistance is bigger；2: poor processability.
Summary of the invention
The technical issues that need to address of the present invention are that the heat-sinking capability of traditional Metal Substrate conducting wire plate is the best.It thus provides a kind of Metal Substrate conducting wire plate, it has good heat conductivility, additionally provides the manufacture method of a kind of Metal Substrate conducting wire plate.The technical scheme is that
A kind of Metal Substrate conducting wire plate, includes bottom, insulating barrier and conductive layer, it is characterised in that: the material of described bottom is metal；Being provided with insulating barrier on bottom, the material of described insulating barrier is silicon oxide；It is provided with conductive layer on the insulating layer.
In nature, silicon is the nonmetalloid that electric conductivity is good, and the compound silicon dioxide of silicon is then the insulant of function admirable.The thickness of silica membrane is when l00 μm, and its surface insulation resistance is up to 100 more than M Ω, and surface treated its sheet resistance of substrate is very big, and electrostatic is difficult to pile up, and prevents electrostatic breakdown sensitive diode.Simultaneously, the thermal conductivity of silica membrane is up to 10w/mk, it is significantly larger than general fiber and resin, and thin film quality dense uniform, thermostability and corrosion resistance are good, and its interface resistance is much smaller than common FR4 interfacial dielectric layer thermal resistance, and large power semiconductor device applies this Metal Substrate conducting wire plate, there is effective heat dissipation channel, the heat of component's feet quickly can be derived.Therefore, use silicon oxide as insulating barrier, can more effectively reach insulation, the effect of heat transfer.It addition, the thermostability of insulating layer of silicon oxide and corrosion resistance are good, dense uniform, it is firmly combined with substrate, it is possible to efficiently against causing because of the coefficients of expansion different between circuit layer, thermal insulation layer and metal-based layer, mechanical strength is low, be difficult to the problems such as processing.
Further, on above-mentioned Metal Substrate conducting wire plate, the thickness of described insulating barrier is preferably 20～500 μm, insulation resistance >=1OOM Ω.
Further, the metal material that bottom uses can be aluminum, copper, silver and some alloy materials, such as aluminium alloy, magnalium etc..
Further, above-mentioned conductive layer conductive material is silver, copper, gold or palladium or other alloy materials.
Further, above-mentioned conductive layer can also include solder mask.
It addition, present invention also offers the manufacture method of a kind of above-mentioned Metal Substrate conducting wire plate, comprise the steps:
S1: take bottom, makes insulating layer of silicon oxide in bottom surface；
S2: conductive layer on surface of insulating layer covers；
S3: make solder mask on the electrically conductive.
In above-mentioned S1 step, multiple method can be used to form insulating layer of silicon oxide in bottom surface, such as: can be by evaporation or the method for spraying, insulating layer of silicon oxide can also be formed on bottom by sol-gel process, it is simple that sol-gel process has technical maturity, method, low cost and other advantages, manufactured silicon oxide insulation layer thickness is controlled, is evenly distributed.
In above-mentioned S2 step, conductive layer can use multiple method to be made on insulating barrier, and arranges conducting wire.The manufacture method of conductive layer and conducting wire can use mask plate as protection, and thereon printed conductive metal slurry dry formed conducting wire；Can also take on the premise of topical application protecting film, in the conducting wire that the position not making to protect directly is made by sputtering or evaporation.
Yet further, before step S1, it is also possible to bottom carries out polishing, cleaning, to remove the spots such as the oil of bottom surface, water, and the workpiece planarization that cleaning is smooth is obtained.
Solder mask preferred white oil material, can use the method manufactures such as printing, spraying at conductive layer and surface of insulating layer.
As preferred method, above-mentioned preparation process uses sol-gel process, comprises the concrete steps that: taking concentration is the sodium silicate solution of 0.05～0.25mol/L, regulates pH to 4～8, stirring, obtains colloidal sol；Being placed in colloidal sol by described bottom 1, after impregnating 5～9 hours, lifting is taken out, and is dried；Heat treatment 2～9 hours at a temperature of 300～700 DEG C.
Technique effect
The Metal Substrate conducting wire plate that the present invention provides, have employed making insulating layer of silicon oxide on the metal material of bottom, make upper conductive layer again, the thermostability of insulating layer of silicon oxide and corrosion resistance are good, dense uniform, it is firmly combined with substrate, it is possible to efficiently against causing because of the coefficients of expansion different between circuit layer, thermal insulation layer and metal-based layer, mechanical strength is low, be difficult to the problems such as processing.The thermal conductivity of silica membrane is higher than general fiber and resin, and thin film quality dense uniform so that the heat dispersion of this Metal Substrate conducting wire plate is more excellent.
Accompanying drawing explanation
Fig. 1 is the structural representation of the Metal Substrate conducting wire plate of one side.
Fig. 2 is the structural representation of two-sided Metal Substrate conducting wire plate.
Wherein, 1 is bottom；2 is insulating barrier；3 is conductive layer.
Detailed description of the invention
Embodiment
1
As depicted in figs. 1 and 2, a kind of Metal Substrate conducting wire plate, include bottom 1, insulating barrier 2 and conductive layer 3, the material of described bottom 1 is metal；Being provided with insulating barrier 2 on bottom 1, the material of described insulating barrier 2 is silicon oxide；Insulating barrier 2 is provided with conductive layer 3.
Metal Substrate conducting wire plate in the present embodiment manufactures by the following method:
First, take the bottom 1 of aluminum matter, polish, then with surfactant solution and water clear shallow bottom 1 surface respectively, remove the spot on bottom 1 surface, dust etc., and make bottom 1 smooth.
It follows that use the silicon oxide particle of mean diameter 250 μm, use the method for vacuum evaporation to form silicon oxide film on bottom 1, then be sintered at 1200 DEG C 1 hour, make silicon oxide particle vitrification, the i.e. available aluminium sheet 1 with insulating layer of silicon oxide 2.
Next, the conductive layer 3 directly made on the aluminium sheet 1 with insulating layer of silicon oxide by the method for sputtering or evaporation.In the present embodiment, use copper as the material of conductive layer 3.
Finally, making solder mask 4 on conductive layer 3, the material of solder mask selects white oil herein.
The thickness of the insulating barrier of the Metal Substrate conducting wire plate being fabricated to is 100 μm, insulation resistance 15OM Ω.Can also pass through adjusting process parameter, make the thickness of insulating barrier in 20～500 μm, and insulation resistance is at more than 100M Ω.
The Metal Substrate conducting wire plate with double-sided insulation layer and conductive layer as shown in Figure 2 can also be made.In manufacturing process, two surfaces up and down for metal basal board carry out pretreatment, and processing and fabricating thermally conductive insulating layer, conductive layer and conducting wire further respectively.
Embodiment
2
As depicted in figs. 1 and 2, a kind of Metal Substrate conducting wire plate, include bottom 1, insulating barrier 2 and conductive layer 3, the material of described bottom 1 is metal；Being provided with insulating barrier 2 on bottom 1, the material of described insulating barrier 2 is silicon oxide；Insulating barrier 2 is provided with conductive layer 3.
Metal Substrate conducting wire plate in the present embodiment manufactures by the following method:
First, take the bottom 1 of aluminum matter, polish, then with surfactant solution and water clear shallow bottom 1 surface respectively, remove the spot on bottom 1 surface, dust etc., and make bottom 1 smooth.
It follows that use the method for airless spraying to form silicon oxide film on bottom 1, then it is sintered, the i.e. available aluminium sheet 1 with insulating layer of silicon oxide 2.
Next, the conductive layer 3 directly made on the aluminium sheet 1 with insulating layer of silicon oxide by the method for sputtering or evaporation.In the present embodiment, use copper as the material of conductive layer 3.
Finally, making solder mask 4 on conductive layer 3, the material of solder mask selects white oil herein.
The thickness of the insulating barrier of the Metal Substrate conducting wire plate being fabricated to is 100 μm, insulation resistance 15OM Ω.Can also pass through adjusting process parameter, make the thickness of insulating barrier in 20～500 μm, and insulation resistance is at more than 100M Ω.
The Metal Substrate conducting wire plate with double-sided insulation layer and conductive layer as shown in Figure 2 can also be made.In manufacturing process, two surfaces up and down for metal basal board carry out pretreatment, and processing and fabricating thermally conductive insulating layer, conductive layer and conducting wire further respectively.
Embodiment
3
A kind of making step of Metal Substrate conducting wire plate:
First, take the bottom 1 of aluminum matter, polish, then with surfactant solution and water clear shallow bottom 1 surface respectively, remove the spot on bottom 1 surface, dust etc., and make bottom smooth.
It follows that take sodium silicate solution (concentration is 0.25mol/L), with acid for adjusting pH to 4～8, stirring, obtain colloidal sol；Being placed in colloidal sol by bottom 1 obtained above, after impregnating 6 hours, lifting is taken out, and is dried；Again at 500 DEG C, heat treatment 4 hours.
Next, the conductive circuit layer 3 directly made on the aluminium sheet 1 with insulating layer of silicon oxide by the method for sputtering or evaporation.In the present embodiment, use silver as the material of conductive layer 3.
Finally, making solder mask 4 on conductive layer 3, the material of solder mask selects white oil herein.
The thickness of the insulating barrier 2 of the Metal Substrate conducting wire plate prepared is 200 μm, insulation resistance 200 M Ω.
Embodiment
4
The making step of a kind of Metal Substrate conducting wire plate, the difference with embodiment 3 is: sodium silicate solution concentration is 0.05mol/L, and bottom dip time in colloidal sol is 5 hours, heat treatment 2 hours at a temperature of 700 DEG C.The material of conductive layer uses copper.The thickness of the insulating barrier 2 of the Metal Substrate conducting wire plate prepared is 20 μm, insulation resistance 100 M Ω.
Embodiment
5
The making step of a kind of Metal Substrate conducting wire plate, the difference with embodiment 3 is: sodium silicate solution concentration is 0.10mol/L, and bottom dip time in colloidal sol is 9 hours, heat treatment 9 hours at a temperature of 300 DEG C.The material of conductive layer uses aluminium alloy.The thickness of the insulating barrier 2 of the Metal Substrate conducting wire plate prepared is 500 μm, insulation resistance 300 M Ω.
Claims (1)
1. a Metal Substrate conducting wire plate, it is characterised in that be made by the steps and obtain:
1st step: taking bottom (1), the material of described bottom (1) is aluminum matter, polishes, then it is respectively washed bottom (1) surface with surfactant solution and water, remove the spot on bottom (1) surface, dust, and make bottom (1) smooth；
2nd step: taking concentration is 0.05～0.25mol/L sodium silicate solution, with acid for adjusting pH to 4～8, stirring, obtains colloidal sol；
3rd step: the bottom (1) the 1st step obtained is placed in colloidal sol, after impregnating 6 hours, lifting is taken out, and is dried；Again at 500 DEG C, heat treatment 4 hours, prepare the bottom (1) with insulating barrier (2)；
4th step: the upper conductive layer (3) made of the bottom with insulating barrier (2) (1) directly prepared in the 3rd step by the method for sputtering or evaporation；Use silver as the material of conductive layer (3)；
5th step: make solder mask (4) on conductive layer (3), the material of solder mask selects white oil；
The thickness of the insulating barrier (2) of the Metal Substrate conducting wire plate prepared is 200 μm, insulation resistance 200 M Ω.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310146276.6A CN103313509B (en) | 2013-04-24 | 2013-04-24 | A kind of Metal Substrate conducting wire plate and preparation method thereof |
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| CN201310146276.6A CN103313509B (en) | 2013-04-24 | 2013-04-24 | A kind of Metal Substrate conducting wire plate and preparation method thereof |
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| CN103313509A CN103313509A (en) | 2013-09-18 |
| CN103313509B true CN103313509B (en) | 2016-08-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105530762B (en) * | 2014-09-29 | 2018-08-07 | 深南电路有限公司 | Resistance welding processing method and circuit board |
| CN106048566A (en) * | 2016-05-24 | 2016-10-26 | 常州大学 | Preparation method for LED aluminum substrate and slurry used during aluminum substrate preparing |
| TWI711352B (en) * | 2019-01-15 | 2020-11-21 | 新宸科技股份有限公司 | Conductive board for a display device |
| CN112201407B (en) * | 2020-09-14 | 2022-05-20 | 北京遥感设备研究所 | Method and structure for preparing curved surface circuit on surface of metal structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101076224A (en) * | 2006-05-16 | 2007-11-21 | 南京汉德森科技股份有限公司 | Aluminum-base printing circuit board and its production |
| CN101572999A (en) * | 2008-04-29 | 2009-11-04 | 汉达精密电子(昆山)有限公司 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
| CN101919320A (en) * | 2007-08-08 | 2010-12-15 | Ain株式会社 | Method for producing wiring board and wiring board |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101517649B1 (en) * | 2008-05-29 | 2015-05-04 | 덴끼 가가꾸 고교 가부시키가이샤 | Metal base circuit board |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101076224A (en) * | 2006-05-16 | 2007-11-21 | 南京汉德森科技股份有限公司 | Aluminum-base printing circuit board and its production |
| CN101919320A (en) * | 2007-08-08 | 2010-12-15 | Ain株式会社 | Method for producing wiring board and wiring board |
| CN101572999A (en) * | 2008-04-29 | 2009-11-04 | 汉达精密电子(昆山)有限公司 | Method for forming conducting wire on insulated heat-conducting metal substrate in a vacuum sputtering way |
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