CN103309177A - Workpiece platform system of photoetching machine - Google Patents
Workpiece platform system of photoetching machine Download PDFInfo
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Abstract
The invention discloses a workpiece platform system of a photoetching machine. The workpiece platform system comprises a rack, a base platform, two silicon-chip platforms, a measuring grating, a dual-frequency laser, three-freedom-degree heterodyne grating interferometers and a signal receiving and processing part, wherein the two silicon-chip platforms operate at an exposure station and a preprocessing station; the four corners of each silicon-chip platform are provided with one three-freedom-degree heterodyne grating interferometer respectively, and the measuring grating is arranged on the rack above the silicon-chip platform. Dual-frequency orthogonal-polarization laser emitted by the dual-frequency laser is transmitted to the three-freedom-degree heterodyne grating interferometers and the measuring grating by optical fiber, four beams of diffraction light of the measuring grating irradiate back to the three-freedom-degree heterodyne grating interferometers, and finally the four beams of measuring light signals are emitted to the signal receiving and processing part. When the silicon-chip platforms move relatively to the measuring grating, the reading in the signal receiving and processing part is utilized for acquiring six-freedom displacement of the silicon-chip platforms by calculation. The workpiece platform system disclosed by the invention has the advantages that the indexes such as measuring accuracy and dynamic performance of the silicon-chip platforms can be improved, and further the whole performance of the workpiece platform system is further improved.
Description
Technical field
The present invention relates to a kind of photo-etching machine work-piece platform system, particularly a kind of photo-etching machine work-piece platform system that utilizes Three Degree Of Freedom heterodyne grating interferometer to measure the displacement of silicon chip platform.
Background technology
Litho machine in the semiconductor manufacturing equipment is the key equipment in the semiconductor chip fabrication.Ultraprecise work stage system is the core subsystem of litho machine, is used for carrying mask plate and silicon chip and finishes high speed ultraprecise step-scan campaign.Ultraprecise work stage system becomes the most representative type systematic in the ultraprecise kinematic system with movement characteristics such as its high speed, high acceleration, big stroke, ultraprecise, multiple degrees of freedoms.For realizing above-mentioned motion, the ultraprecise work stage adopts the two-frequency laser interferometer measuring system to measure the displacement of ultraprecise work stage multiple degrees of freedom usually.Yet along with improving constantly of motion index such as measuring accuracy, measuring distance, measuring speed, two-frequency laser interferometer is with environmental sensitivity, the measuring speed a series of problems that big, expensive, measurement target work stage dynamic perfromance difference etc. exists that are difficult to improve, take up room, thereby is difficult to satisfy higher measurement demand.
At the problems of two-frequency laser interferometer in the photo-etching machine work-piece platform position measurement is used, in recent years, litho machine manufacturer and research institution have carried out a series of researchs in the world, research mainly concentrates on and utilizes optical grating measuring system to realize the measurement demand that photo-etching machine work-piece platform improves constantly, and achievement in research all has exposure in many patent papers.
American documentation literature US7,102, open day on August 4th, 2005 of 729B2() a kind of scheme of utilizing the displacement of optical grating measuring system measuring workpieces platform multiple degrees of freedom is disclosed, namely at side and the end face of work stage a plurality of grating chis are installed, work stage around and the top layout read head corresponding with the grating chi; The defective of this scheme is when work stage is made x direction and the big stroke motion of y direction in surface level, the side read head can not be worked, do not provide corresponding solution in this patent documentation, also there are other shortcomings in this scheme, are subject to environmental interference than ambassador's measurement and influence measuring accuracy, measurement scheme and take up room big etc. as the laser light path.American documentation literature US7,940, open day on Dec 24th, 2009 of 392B2() the another kind of scheme of utilizing the displacement of optical grating measuring system measuring workpieces platform multiple degrees of freedom is disclosed, i.e. plane of arrangement grating above work stage, arrange corresponding grating reading head and be used for the perpendicular displacement measured sensor at the work stage end face, there is not the light echo problem of measuring in this scheme, be not subject to problems such as environmental interference, but the grating reading head in this scheme only can be measured level to displacement, vertically adopt current vortex or interferometer equal altitudes sensor to displacement measurement, measurement scheme adopts multiple sensors not only to influence the measuring accuracy of work stage, and has increased the complexity of scheme.American documentation literature US7,483, open day on November 15th, 2007 of 120B2() provided the specific implementation method of above-mentioned measurement scheme, utilize 8 L type plane grating splicings to measure grating as work stage, at four grating reading heads of top layout of work stage, but do not set forth the measurement degree of freedom of read head and the displacement measurement degree of freedom of work stage in this patent scheme.Open day on Dec 23rd, 2010 of american documentation literature publication number US2010/0321665A1() the grating reading header structure that can cooperate plane grating to measure is disclosed, though this structure can be measured the vertical direction displacement, but this read head is to adopt the homodyne measuring principle, existence is measured and is subject to disturb, signal is difficult to shortcomings such as processing, and is difficult to realize very high measuring accuracy.Chinese patent literature (application number: 201210449244.9,201210448734.7) disclose a kind of heterodyne grating interferometer measuring system respectively, all adopted quarter-wave plate to be used for changing the polarization state of light beam in the read head structure of two kinds of interferometer measuring systems, the optical texture complexity, the imperfection of optical element will cause measuring error simultaneously, and this will strengthen the measuring error of using this grating interferometer measuring workpieces platform displacement; Two kinds of interferometer measuring systems all can only be measured the displacement of two degree of freedom, and this is arranged in interferometer quantity on the silicon chip platform with increase, increase the difficulty of resolving of work stage displacement, reduce the measuring accuracy of work stage displacement.
Summary of the invention
Consider the limitation of prior art scheme, the purpose of this invention is to provide a kind of photo-etching machine work-piece platform system, this photo-etching machine work-piece platform system utilizes the large scale grating to cooperate Three Degree Of Freedom heterodyne grating interferometer to carry out silicon chip platform displacement measurement.The Three Degree Of Freedom heterodyne grating interferometer that system adopts can at a high speed, highly accelerate, realize under the big stroke situation Measurement Resolution and the precision of inferior nanometer scale, have simultaneously that environmental sensitivity is little, simple for structure, volume is little, quality is light, be easy to advantage such as installation.The photo-etching machine work-piece platform system adopts the large scale grating to cooperate the metering system of Three Degree Of Freedom heterodyne grating interferometer can realize the measurement of the inferior nano-precision of silicon chip platform six-degree of freedom displacement, can effectively reduce simultaneously volume and the quality of whole work-piece platform system, increase the dynamic property of silicon chip platform and the control difficulty of reduction silicon chip platform, the photo-etching machine work-piece platform system performance is overally improved.
Technical scheme of the present invention is as follows:
A kind of photo-etching machine work-piece platform system, comprise frame, base station, run on two silicon chip platforms of exposure station and pre-service station respectively, it is characterized in that: described work stage system comprises that also measuring grating, two-frequency laser, Three Degree Of Freedom heterodyne grating interferometer and signal receives and processing element;
Described measurement grating adopts plane reflection type two-dimensional grating, measuring grating by exposure station measurement grating and pre-service station forms, the exposure station is measured grating and pre-service station and is measured grating respectively on the frame of corresponding two silicon chip platforms tops that are installed on exposure station and pre-service station, and is carved with the surface of the two-dimentional reflection-type grating line of rabbet joint towards the upper surface of two silicon chip platforms;
Four Three Degree Of Freedom heterodyne grating interferometers are installed at described four jiaos of places that run on two silicon chip platforms of exposure station and pre-service station respectively, two-frequency laser is installed on the frame, four Three Degree Of Freedom heterodyne grating interferometers that are respectively four Three Degree Of Freedom heterodyne grating interferometers on the silicon chip platform that runs on the exposure station by Optical Fiber Transmission and run on the silicon chip platform of pre-service station provide double frequency cross polarization laser, and two-frequency laser provides reference electrical signal for signal receives with processing element simultaneously;
Vertical incidence was to measuring grating after described double frequency cross polarization laser passed through each Three Degree Of Freedom heterodyne grating interferometer respectively, produce four bundle diffraction reflection light, four bundle diffraction reflection light retroeflection are to Three Degree Of Freedom heterodyne grating interferometer, export four drive test amount light signals by Three Degree Of Freedom heterodyne grating interferometer then, four drive test amount light signals are delivered in signal reception and the processing element and handle;
When described two silicon chip platforms that run on exposure station and pre-service station move with respect to the measurement grating respectively, signal receives with processing element and respectively exports four groups of x, y and z to the six-degree of freedom displacement of measuring displacement, utilize eight groups of measured values to calculate respectively the silicon chip platform that runs on exposure station and pre-service station.
Three Degree Of Freedom heterodyne grating interferometer of the present invention comprises polarization spectroscope, with reference to grating, first dioptric element and second dioptric element, described with reference to being carved with the two-dimentional reflection-type grating line of rabbet joint on the grating surface; Double frequency cross polarization laser is incident to light splitting behind the polarization spectroscope, and transmitted light is reference light, and reflected light is measuring light;
Described reference light is incident to reference to producing four bundle diffraction reflection reference lighies behind the grating, four bundle diffraction reflection reference lighies form the parallel reference light of four bundles through the first dioptric element post deflection, and the parallel reference light retroeflection of four bundles transmission to the polarization spectroscope forms four bundle transmission reference lighies; Described measuring light produces four bundle diffraction reflection measuring light after being incident to and measuring grating, four bundle diffraction reflection measuring light form four bundle horizontal survey light through the second dioptric element post deflection, and four bundle horizontal survey light retroeflection to polarization spectroscope back reflections form four bundle reflection and transmission measuring light; Four bundle transmission reference lighies and four bundle reflection measurement light overlap in twos respectively and form four drive test amount light signals, and four drive test amount light signals receive with processing element to signal through Optical Fiber Transmission respectively and handle;
When Three Degree Of Freedom heterodyne grating interferometer carries out the linear movement of x direction, y direction and z direction three degree of freedom with respect to the measurement grating, signal receives with processing element will export the Three Degree Of Freedom linear displacement.
First dioptric element in the Three Degree Of Freedom potential difference grating interferometer of the present invention and the preferred version of second dioptric element are all to adopt two right-angle prisms that are positioned at the xoy plane and two refractive prisms that right-angle prism is integrated that are positioned at the xoz plane.
First dioptric element in the Three Degree Of Freedom heterodyne grating interferometer of the present invention and the another kind of preferred version of second dioptric element are all to adopt lens.
A kind of heterodyne grating interferometer displacement measurement system provided by the present invention has the following advantages and the high-lighting effect:
Arrange in the photo-etching machine work-piece platform system that this Three Degree Of Freedom grating interferometer cooperates the large scale grating can realize the measurement of the inferior nano-precision of silicon chip platform six-degree of freedom displacement, can effectively reduce simultaneously volume and the quality of whole work-piece platform system, increase the dynamic property of silicon chip platform and the control difficulty of reduction silicon chip platform, the photo-etching machine work-piece platform system performance is overally improved.The photo-etching machine work-piece platform system adopts Three Degree Of Freedom heterodyne grating interferometer, can at a high speed, highly accelerate, realize under the big stroke situation Measurement Resolution and the precision of inferior nanometer scale, simultaneously measuring system have simple for structure, volume is little, quality is light, be easy to advantage such as installation.
Description of drawings
Fig. 1 is a kind of photo-etching machine work-piece platform system schematic of the present invention.
Fig. 2 measures grating and the relative position synoptic diagram of silicon chip platform in the xoy plane for the present invention.
Fig. 3 is first kind of Three Degree Of Freedom heterodyne of the present invention grating interferometer structure embodiment synoptic diagram.
Fig. 4 is second kind of Three Degree Of Freedom heterodyne of the present invention grating interferometer structure embodiment synoptic diagram.
Among the figure, 1---frame; 2---vibrating isolation foundation; 3---base station; 4a---exposure station silicon chip platform, 4b---pre-service station silicon chip platform; 5---the measurement grating, the pre-service station is measured grating to 51---the exposure station is measured grating, 52---; 6---two-frequency laser; 7---Three Degree Of Freedom heterodyne grating interferometer, 71---polarization spectroscope, 72---with reference to grating, 73---refractive prism, 74---lens; 8---signal receives and processing element.
Embodiment
Below in conjunction with accompanying drawing structure of the present invention, principle and embodiment are described in further detail.
Please refer to Fig. 1 and 2, Fig. 1 is a kind of photo-etching machine work-piece platform system schematic of the present invention, and Fig. 2 measures grating and the relative position synoptic diagram of silicon chip platform in the xoy plane for the present invention, and system is described in conjunction with the photo-etching machine work-piece platform of the present invention of Fig. 1 and Fig. 2.As shown in Figure 1, the photo-etching machine work-piece platform system comprises frame 1, base station 3, runs on the silicon chip platform 4a of exposure station and runs on the silicon chip platform 4b of pre-service station; The work stage system comprises that also measuring grating 5, two-frequency laser 6, Three Degree Of Freedom heterodyne grating interferometer 7 and signal receives and processing element 8, and this part parts is used for measuring the silicon chip platform 4a that runs on the exposure station and the six-degree of freedom displacement that runs on the silicon chip platform 4b of pre-service station.
Measurement frame 1, base station 3 are positioned on the vibrating isolation foundation 2 by isolation mounting, two silicon chip platforms of operation on the base station 3, namely run on the silicon chip platform 4a and the silicon chip platform 4b that runs on the pre-service station of exposure station, two silicon chip platforms move and place-exchange according to procedure arrangement, adopt two silicon chip platforms effectively to enhance productivity.
Please refer to Fig. 1 and Fig. 2, measuring grating 5 is made up of exposure station measurement grating 51 and pre-service station measurement grating 52, the exposure station is measured grating 51 and pre-service station and is measured grating 52 respectively on the frame 1 of corresponding two silicon chip platforms tops that are installed on exposure station and pre-service station, and is carved with the surface of the two-dimentional reflection-type grating line of rabbet joint towards the upper surface of two silicon chip platforms.Measure grating 5 and adopt plane reflection type two-dimensional grating, surface topography is small grid array; The grating constant of two-dimensional grating is usually in micron dimension, and the grooved of two-dimensional grating adopts the square groove type through particular design, with obtain two higher grating vector directions ± 1 order diffraction efficient.The dimensional requirement that the exposure station is measured grating 51 and pre-service station measurement grating 52 is very big, and (800mm * 800mm), be very difficult to make, adopting the grating joining method to obtain is the best method that the exposure station is measured grating 51 and pre-service station measurement grating 52.
Run on the exposure silicon chip platform 4a of station and pre-service station silicon chip platform 4b four jiaos of places each four Three Degree Of Freedom heterodyne grating interferometers 7 are installed respectively, two-frequency laser 6 is installed on the frame 1, four Three Degree Of Freedom heterodyne grating interferometers 7 that are respectively four the Three Degree Of Freedom heterodyne grating interferometers 7 on the silicon chip platform that runs on the exposure station by Optical Fiber Transmission and run on the silicon chip platform of pre-service station provide double frequency cross polarization laser, and two-frequency laser 6 provides reference electrical signal for signal receives with processing element 8 simultaneously.
In fact, for satisfying demand and the silicon chip platform wire cable layout needs of eight Three Degree Of Freedom heterodyne grating interferometer laser powers, exposure station and pre-service station corresponding on frame 1 are respectively installed a two-frequency laser 6, are respectively four the Three Degree Of Freedom heterodyne grating interferometers 7 on the silicon chip platform 4a that runs on the exposure station and four Three Degree Of Freedom heterodyne grating interferometers 7 running on the silicon chip platform 4b of pre-service station provide double frequency cross polarization laser.
Double frequency cross polarization laser passes through each Three Degree Of Freedom heterodyne grating interferometer 7 back vertical incidence respectively to measuring grating 5, produce four bundle diffraction reflection light, four bundle diffraction reflection light retroeflection are to Three Degree Of Freedom heterodyne grating interferometer 7, by Three Degree Of Freedom heterodyne grating interferometer 7 outputs four drive test amount light signals, four drive test amount light signals are delivered in signal reception and the processing element 8 and handle then.
In fact, a cover signal respectively is set receives and processing element 8 for satisfying silicon chip platform wire cable layout needs, be respectively four the Three Degree Of Freedom heterodyne grating interferometers 7 on the silicon chip platform 4a that runs on the exposure station and running on four Three Degree Of Freedom heterodyne grating interferometers 7 on the silicon chip platform 4b of pre-service station.
When described two silicon chip platforms that run on exposure station and pre-service station move with respect to measurement grating 5 respectively, two cover signals receive to be exported four groups of x, y and z respectively with processing element 8 (z is to being small movements to measuring displacement, the about 1mm of range of movement), utilize eight groups of measured values to calculate to run on the six-degree of freedom displacement of the silicon chip platform of exposure station and pre-service station respectively.
Please refer to Fig. 3, Fig. 3 is first kind of Three Degree Of Freedom heterodyne of the present invention grating interferometer structure embodiment synoptic diagram.As shown in Figure 3, Three Degree Of Freedom heterodyne grating interferometer 7 comprise polarization spectroscope 71, with reference to grating 72, first dioptric element and second dioptric element.With reference to being carved with the two-dimentional reflection-type grating line of rabbet joint on grating 72 surfaces for generation of reference light, has identical grating parameter with measurement grating 5.First dioptric element and second dioptric element are used for the direction of propagation of polarized light, and the two all adopts two right-angle prisms that are positioned at the xoy plane and the integrated refractive prism 73 of two right-angle prisms that is positioned at the xoz plane.
Two-frequency laser 6 is incident to polarization spectroscope 71 back light splitting by Optical Fiber Transmission double frequency cross polarization laser, and transmitted light is reference light, and reflected light is measuring light; Described reference light is incident to reference to grating 72 backs and produces four bundle diffraction reflection reference lighies, four bundle diffraction reflection reference lighies form the parallel reference light of four bundles through the first dioptric element post deflection, and the parallel reference light retroeflection of four bundles to polarization spectroscope 71 back transmissions form four bundle transmission reference lighies; Described measuring light is incident to measures grating 5 back generations four bundle diffraction reflection measuring light, four bundle diffraction reflection measuring light form four bundle horizontal survey light through the second dioptric element post deflection, and four bundle horizontal survey light retroeflection to polarization spectroscope 71 back reflections form four bundle reflection and transmission measuring light; Four bundle transmission reference lighies and four bundle reflection measurement light overlap in twos respectively and form four drive test amount light signals, and four drive test amount light signals receive with processing element 8 to signal through Optical Fiber Transmission respectively and handle.
When Three Degree Of Freedom heterodyne grating interferometer 7 carries out the linear movement of x direction, y direction and z direction three degree of freedom with respect to measurement grating 5, signal receives with processing element 8 will export the Three Degree Of Freedom linear displacement, the expression formula of three-degree-of-freedom motion displacement: x=k
x* (alpha-beta), y=k
y* (γ-δ), z=k
z* (alpha+beta+γ+δ), k
x=Λ
x/ 4 π, k
y=Λ
y/ 4 π, k
z=λ/4(1+cos θ), α, β, γ, δ are the phase place reading value of signal reception and processing element 8 in the formula, Λ
x, Λ
yBe grating constant, λ is optical maser wavelength, and θ is the optical grating diffraction angle, gets Λ
x=Λ
y=1 μ m, λ=632.8nm, the phase resolution of α, β, γ, δ are 2 π/1024, the Measurement Resolution of the x of heterodyne grating interferometer, y and z is respectively 0.49nm, 0.49nm and 0.18nm.
Please refer to Fig. 4, Fig. 4 is second kind of grating interferometer structure of the present invention embodiment synoptic diagram.As shown in Figure 4, the lens 74 that all adopt of first dioptric element of this grating interferometer 7 and second dioptric element.All be arranged in the focus place of two lens 74 with reference to grating 72 and measurement grating 5, four bundle reference lighies that go out from 72 diffraction reflections of reference grating and from measuring four bundle measuring light that grating 5 diffraction go out two lens 74 of incidents at a certain angle respectively, behind two lens 74 deviations, export with directional light respectively, compare the employing refractive prism, succinct more on this scenario-frame, be easy to debug, when changing the optical grating diffraction angle, need not change lens parameter and installation requirement, and vertical lens optical axis direction stroke is bigger.
The grating that utilizes that provides in the above-mentioned embodiment carries out the photo-etching machine work-piece platform system of silicon chip platform displacement measurement, carry out the photo-etching machine work-piece platform system of silicon chip platform displacement measurement with respect to utilizing laser interferometer, on the basis of satisfying the measurement demand, can effectively reduce work stage volume, quality, improve the dynamic property of work stage greatly, the work stage overall performance is comprehensively improved.The photo-etching machine work-piece platform system adopts Three Degree Of Freedom heterodyne grating interferometer, can under high speed, high acceleration, big stroke situation, realize Measurement Resolution and the precision of inferior nanometer scale, simultaneously measuring system have simple for structure, volume is little, quality is light, be easy to advantage such as installation, except the application in the photo-etching machine work-piece platform system, this Three Degree Of Freedom heterodyne grating interferometer also can be applicable in the precision measurement of the objective table multiple degrees of freedom displacement in precision machine tool, three coordinate measuring machine, the semiconductor detection etc.
Claims (4)
1. photo-etching machine work-piece platform system, comprise frame (1), base station (3), run on two silicon chip platforms of exposure station and pre-service station respectively, it is characterized in that: described work stage system comprises that also measuring grating (5), two-frequency laser (6), Three Degree Of Freedom heterodyne grating interferometer (7) and signal receives and processing element (8);
Described measurement grating (5) adopts plane reflection type two-dimensional grating, measuring grating (52) by exposure station measurement grating (51) and pre-service station forms, the exposure station is measured grating (51) and pre-service station and is measured grating (52) respectively on the frame (1) above corresponding two silicon chip platforms that are installed on exposure station and pre-service station, and is carved with the surface of the two-dimentional reflection-type grating line of rabbet joint towards the upper surface of two silicon chip platforms;
Four Three Degree Of Freedom heterodyne grating interferometers (7) are installed at described four jiaos of places that run on two silicon chip platforms of exposure station and pre-service station respectively, frame (1) goes up installs two-frequency laser (6), four the Three Degree Of Freedom heterodyne grating interferometers (7) that are respectively four the Three Degree Of Freedom heterodyne grating interferometers (7) on the silicon chip platform that runs on the exposure station by Optical Fiber Transmission and run on the silicon chip platform of pre-service station provide double frequency cross polarization laser, and two-frequency laser (6) provides reference electrical signal for signal reception and processing element (8) simultaneously;
Described double frequency cross polarization laser passes through each Three Degree Of Freedom heterodyne grating interferometer (7) back vertical incidence respectively to measuring grating (5), produce four bundle diffraction reflection light, four bundle diffraction reflection light retroeflection are to Three Degree Of Freedom heterodyne grating interferometer (7), by Three Degree Of Freedom heterodyne grating interferometer (7) output four drive test amount light signals, four drive test amount light signals are delivered in signal reception and the processing element (8) and handle then;
When described two silicon chip platforms that run on exposure station and pre-service station move with respect to measurement grating (5) respectively, signal receives with processing element (8) and respectively exports four groups of x, y and z to the six-degree of freedom displacement of measuring displacement, utilize eight groups of measured values to calculate respectively the silicon chip platform that runs on exposure station and pre-service station.
2. a kind of photo-etching machine work-piece platform according to claim 1 system, it is characterized in that: Three Degree Of Freedom heterodyne grating interferometer (7) comprises polarization spectroscope (71), with reference to grating (72), first dioptric element and second dioptric element, and is described with reference to being carved with the two-dimentional reflection-type grating line of rabbet joint on grating (72) surface; Double frequency cross polarization laser is incident to polarization spectroscope (71) back light splitting, and transmitted light is reference light, and reflected light is measuring light;
Described reference light is incident to reference to grating (72) back and produces four bundle diffraction reflection reference lighies, four bundle diffraction reflection reference lighies form the parallel reference light of four bundles through the first dioptric element post deflection, and the parallel reference light retroeflection of four bundles to polarization spectroscope (71) back transmission forms four bundle transmission reference lighies;
Described measuring light is incident to measures grating (5) back generation four bundle diffraction reflection measuring light, four bundle diffraction reflection measuring light form four bundle horizontal survey light through the second dioptric element post deflection, and four bundle horizontal survey light retroeflection to polarization spectroscope (71) back reflections form four bundle reflection and transmission measuring light;
Four bundle transmission reference lighies and four bundle reflection measurement light overlap in twos respectively and form four drive test amount light signals, and four drive test amount light signals receive with processing element (8) to signal through Optical Fiber Transmission respectively and handle;
When Three Degree Of Freedom heterodyne grating interferometer (7) carries out the linear movement of x direction, y direction and z direction three degree of freedom with respect to measurement grating (5), signal receives with processing element (8) will export the Three Degree Of Freedom linear displacement.
3. a kind of photo-etching machine work-piece platform according to claim 1 and 2 system, it is characterized in that: described first dioptric element and second dioptric element all adopt two right-angle prisms that are positioned at the xoy plane and the integrated refractive prism (73) of two right-angle prisms that is positioned at the xoz plane.
4. a kind of photo-etching machine work-piece platform according to claim 1 and 2 system, it is characterized in that: described first dioptric element and second dioptric element all adopt lens (74).
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| CN104061864A (en) * | 2014-06-30 | 2014-09-24 | 清华大学 | Plane grating-based system for measuring large-stroke movement of wafer bench |
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| CN108106536A (en) * | 2017-11-13 | 2018-06-01 | 清华大学 | A kind of plane grating interferometer displacement measurement system |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060001889A1 (en) * | 2004-07-02 | 2006-01-05 | Canon Kabushiki Kaisha | Positioning apparatus and photolithography apparatus including the same |
| CN1916561A (en) * | 2005-08-16 | 2007-02-21 | 安捷伦科技有限公司 | Interferometer for measuring perpendicular translations |
| JP2009281947A (en) * | 2008-05-23 | 2009-12-03 | Nikon Corp | Equipment and method for measuring position, system and method for forming pattern, system and method for exposure and method for manufacturing device |
| JP2010237203A (en) * | 2009-03-30 | 2010-10-21 | Nikon Corp | Optical unit, interference device, stage device, pattern forming device, and device manufacturing method |
| CN102944176A (en) * | 2012-11-09 | 2013-02-27 | 清华大学 | Displacement measuring system of heterodyne grating interferometer |
-
2013
- 2013-06-19 CN CN201310243147.9A patent/CN103309177B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060001889A1 (en) * | 2004-07-02 | 2006-01-05 | Canon Kabushiki Kaisha | Positioning apparatus and photolithography apparatus including the same |
| CN1916561A (en) * | 2005-08-16 | 2007-02-21 | 安捷伦科技有限公司 | Interferometer for measuring perpendicular translations |
| JP2009281947A (en) * | 2008-05-23 | 2009-12-03 | Nikon Corp | Equipment and method for measuring position, system and method for forming pattern, system and method for exposure and method for manufacturing device |
| JP2010237203A (en) * | 2009-03-30 | 2010-10-21 | Nikon Corp | Optical unit, interference device, stage device, pattern forming device, and device manufacturing method |
| CN102944176A (en) * | 2012-11-09 | 2013-02-27 | 清华大学 | Displacement measuring system of heterodyne grating interferometer |
Non-Patent Citations (1)
| Title |
|---|
| 滕伟等: "光刻机工作台超精密运动与同步控制", 《机械工程学报》, vol. 47, no. 11, 23 July 1922 (1922-07-23), pages 185 - 190 * |
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