CN103296013A - 射频器件的形成方法 - Google Patents
射频器件的形成方法 Download PDFInfo
- Publication number
- CN103296013A CN103296013A CN2013102058144A CN201310205814A CN103296013A CN 103296013 A CN103296013 A CN 103296013A CN 2013102058144 A CN2013102058144 A CN 2013102058144A CN 201310205814 A CN201310205814 A CN 201310205814A CN 103296013 A CN103296013 A CN 103296013A
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- Prior art keywords
- layer
- radio
- formation method
- frequency devices
- buried oxide
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Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000011229 interlayer Substances 0.000 claims abstract description 27
- 239000012212 insulator Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000011230 binding agent Substances 0.000 claims description 16
- 239000005357 flat glass Substances 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76275—Vertical isolation by bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310205814.4A CN103296013B (zh) | 2013-05-28 | 2013-05-28 | 射频器件的形成方法 |
US14/156,865 US20140357051A1 (en) | 2013-05-28 | 2014-01-16 | Method for forming radio frequency device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310205814.4A CN103296013B (zh) | 2013-05-28 | 2013-05-28 | 射频器件的形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103296013A true CN103296013A (zh) | 2013-09-11 |
CN103296013B CN103296013B (zh) | 2017-08-08 |
Family
ID=49096643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310205814.4A Active CN103296013B (zh) | 2013-05-28 | 2013-05-28 | 射频器件的形成方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20140357051A1 (zh) |
CN (1) | CN103296013B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110943066A (zh) * | 2018-09-21 | 2020-03-31 | 联华电子股份有限公司 | 具有高电阻晶片的半导体结构及高电阻晶片的接合方法 |
CN113437016A (zh) * | 2021-06-25 | 2021-09-24 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103077949B (zh) * | 2013-01-28 | 2016-09-14 | 上海华虹宏力半导体制造有限公司 | 绝缘体上硅射频器件及其制作方法 |
US20150371905A1 (en) * | 2014-06-20 | 2015-12-24 | Rf Micro Devices, Inc. | Soi with gold-doped handle wafer |
US20160379943A1 (en) * | 2015-06-25 | 2016-12-29 | Skyworks Solutions, Inc. | Method and apparatus for high performance passive-active circuit integration |
US10923790B2 (en) * | 2017-02-20 | 2021-02-16 | City University Of Hong Kong | Low-loss silicon on insulator based dielectric microstrip line |
WO2022164693A1 (en) * | 2021-01-26 | 2022-08-04 | Tokyo Electron Limited | Localized stress regions for three-dimension chiplet formation |
US11688642B2 (en) * | 2021-01-26 | 2023-06-27 | Tokyo Electron Limited | Localized stress regions for three-dimension chiplet formation |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020096717A1 (en) * | 2001-01-25 | 2002-07-25 | International Business Machines Corporation | Transferable device-containing layer for silicon-on-insulator applications |
US20120187491A1 (en) * | 2010-01-14 | 2012-07-26 | International Business Machines Corporation | Method for forming retrograded well for mosfet |
CN102693933A (zh) * | 2011-03-22 | 2012-09-26 | Soitec公司 | 用于绝缘体型衬底上的半导体的基础衬底的制造方法 |
CN103022054A (zh) * | 2012-12-21 | 2013-04-03 | 上海宏力半导体制造有限公司 | 绝缘体上硅射频器件及绝缘体上硅衬底 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1744365B1 (en) * | 1996-08-27 | 2009-04-15 | Seiko Epson Corporation | Exfoliating method and transferring method of thin film device |
TW548860B (en) * | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
WO2004064018A1 (ja) * | 2003-01-15 | 2004-07-29 | Semiconductor Energy Laboratory Co., Ltd. | 剥離方法及びその剥離方法を用いた表示装置の作製方法 |
US7262087B2 (en) * | 2004-12-14 | 2007-08-28 | International Business Machines Corporation | Dual stressed SOI substrates |
JP5702966B2 (ja) * | 2010-08-02 | 2015-04-15 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
-
2013
- 2013-05-28 CN CN201310205814.4A patent/CN103296013B/zh active Active
-
2014
- 2014-01-16 US US14/156,865 patent/US20140357051A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020096717A1 (en) * | 2001-01-25 | 2002-07-25 | International Business Machines Corporation | Transferable device-containing layer for silicon-on-insulator applications |
US20120187491A1 (en) * | 2010-01-14 | 2012-07-26 | International Business Machines Corporation | Method for forming retrograded well for mosfet |
CN102693933A (zh) * | 2011-03-22 | 2012-09-26 | Soitec公司 | 用于绝缘体型衬底上的半导体的基础衬底的制造方法 |
CN103022054A (zh) * | 2012-12-21 | 2013-04-03 | 上海宏力半导体制造有限公司 | 绝缘体上硅射频器件及绝缘体上硅衬底 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110943066A (zh) * | 2018-09-21 | 2020-03-31 | 联华电子股份有限公司 | 具有高电阻晶片的半导体结构及高电阻晶片的接合方法 |
CN113437016A (zh) * | 2021-06-25 | 2021-09-24 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103296013B (zh) | 2017-08-08 |
US20140357051A1 (en) | 2014-12-04 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140422 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140422 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: Zuchongzhi road in Pudong Zhangjiang hi tech park Shanghai city Pudong New Area No. 1399 201203 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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SE01 | Entry into force of request for substantive examination | ||
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