CN103270618B - The method of encapsulating electronic device - Google Patents

Abstract

The present invention relates to the method that encapsulating electronic device stops penetrant, wherein provide and include at least one hot activable contact adhesive or chip architecture of hotmelt, with this chip architecture of Zoned application that need to encapsulate at least about electronic installation in the substrate assemble/include this electronic installation, for described electronic installation with at least surround its binding agent and arrange covering, wherein binding agent contacts with covering, and the most at least this binding agent of thermal activation on the subregion of adhesive surface, thus form the complex at least with substrate and covering, wherein, activation institute calorific requirement is by substantially self producing in the chip architecture at least including binding agent.

Description

The method of encapsulating electronic device

Technical field

The method that the present invention relates to encapsulating electronic device.

Background technology

(light) electronic installation is more and more frequently used in commercial product or market to be introduced.This kind of device includes organic Or inorganic electronic structure, such as, organic, organic metal or polymer semiconductor or combinations thereof.According to desired application, this A little devices and product show as the form of rigidity or flexibility, and wherein the needs for flexible apparatus are continuously increased.Such as, by print Brush method (such as letterpress, intaglio printing, silk screen printing or lithographic printing) or so-called " without pressure line-at-a-time printing " is (such as heat transfer print Brush (Thermotransferdruck), ink jet printing or digital printed) manufacture such device.In many cases, also use very Short side method, such as chemical vapour deposition technique (CVD), physical vaporous deposition (PVD), plasma enhanced chemical or physical deposition Method (PECVD), sputtering method, (plasma) etching or vapour deposition coating method (Bedampfung), the most typically pass through mask Pattern.

Commercialization or the example of (light) electronic application received publicity in terms of its market potential include: electrophoresis or Electrochromic structure body or display, organic or polymer LED in reader or display device (OLED or PLED) or as illuminator, electroluminescent lamp, light-emitting electrochemical cell (LEEC), organic solar batteries (preferred coloring agent Or polymer solar battery), inorganic solar cell (preferred film solaode, be based particularly on silicon, germanium, copper, indium and Those of selenium), organic field effect transistor, organic switching element, organic photoelectric multiplier tube, organic laser diode, organic or nothing Machine induction apparatus or based on Organic substance or the RFID transponder of inorganic matter.

In organic and/or inorganic (light) person in electronics, especially in organic (light) person in electronics, for realizing (light) electricity Sub-device sufficient life-span and function and be considered as technological challenge is that they assemblies of being comprised of protection protect against infiltration Thing damages.Penetrant can be various low-molecular-weight organic or inorganic compounds, particularly steam and oxygen.

In the situation of organic and/or inorganic (light) electronic device, especially in the situation of organic (light) electronic device, Need flexible adhesive agent solution (flexible especially), this flexible adhesive agent solution is constituted penetrant The antiseepage barrier (Permeationsbarriere) of (such as oxygen and/or steam etc.).Additionally, for these (light) electronics Device also has other requirements many.This flexible adhesive agent solution not only obtains effective adhesiveness between two kinds of base materials, and Be also satisfied such as following performance requirement: high shear strength and peel strength, chemical stability, ageing-resistant, highly transparent, It is easily worked, and high flexibility and pliability.

Therefore, a kind of approach that prior art is conventional is to be placed on electronic installation to pass through steam and the two of oxygen Between individual substrate.Then, seal at edge.For non-compliant structure, use glass or metal substrate, they provide height Antiseepage barrier but very sensitive to mechanical load.It addition, these substrates make whole device have bigger thickness.Additionally, In the situation of metal substrate, there is no the transparency.

Conversely, for flexible apparatus, using smooth substrate, such as transparent or opaque film, this film can have multilamellar Form.Not only can use the combination of different polymer under this situation, but also organic layer or inorganic layer can be used.Use this Plant smooth substrate and can obtain the very thin structure of softness.

For different application, exist various may substrate, such as film, woven fabric, non-woven fabrics and paper or it Combination.

In order to obtain maximally effective sealing, use specific barrier adhesive (BarrierKlebemassen).For close The good binding agent of envelope (light) electronic building brick has low Oxygen permeability, and the lowest water vapour permeability, to device Have sufficient adhesiveness and can on device good flow.Device is had low adhesiveness and reduces the antiseepage of interface Effect such that it is able to make oxygen and steam enter, and unrelated with the character of binding agent.Only connecing between binding agent and substrate Touching when being continuous print, the character of binding agent is only the determiner of the anti-seepage effect of binding agent.

In order to characterize anti-seepage effect (Barrierewirkung), generally designate OTR oxygen transmission rate OTR and vapor permeability WVTR.Described transmitance shows the most respectively, at temperature and the specified conditions of dividing potential drop and other optional measuring condition (as relative Ambient humidity) under, per unit area and the oxygen stream by film of unit interval or steam stream.These values are the lowest, then be used for The respective material of encapsulation is the most suitable.Now, the description for infiltration is based not only on WVTR or OTR value, and always includes oozing The explanation (such as, the thickness of material) of saturating average journey length or to be normalized to specific journey long.

Permeability P the measuring for the permeability of gas and/or liquid that be substrate.Low P value represents good anti-seepage effect. For specific infiltration journey length, dividing potential drop and temperature, under steady state conditions, a reactor, it is intended that material and the permeability P specifying penetrant are special Fixed value.Permeability P is diffusion term D and the product of dissolubility item S:

P=D*S

In this application, dissolubility item S describes the barrier adhesive affinity to penetrant.Such as, in the feelings of steam Under shape, hydrophobic material obtains low S value.Diffusion term D is penetrant the measuring and directly depending on of animal migration in impervious material The such as character such as molecular mobility ratio or free volume.Relatively low D value is usually obtained in the highly cross-linked or material of highly crystalline. But, the material of highly crystalline is the most transparent, and higher crosslinking causes flexible relatively low.Permeability P is generally along with dividing Transport factor increase and rise, such as, when liter high-temperature or beyond glass transition temperature time.

As for the infiltrative impact on steam and oxygen, the method increasing binding agent anti-seepage effect must consider especially The two parameter D and S.Except these chemical property, it is necessary to consider that physical effect, on infiltrative impact, is the most averagely oozed Journey length and interfacial property (flowing property of binding agent, adhesiveness) thoroughly.Preferably barrier adhesive has low D value and S value, with And base material is had extraordinary adhesiveness.

Low solubility term S is typically not enough to and obtains good barrier properties.Particularly, the example that a class is classical is siloxanes Elastomer.This material the most hydrophobic (little dissolubility item), but due to its free rotating Si-O key (big diffusion term), right Steam and oxygen have fairly small anti-seepage effect.Therefore, for good anti-seepage effect, dissolubility item S and diffusion term D it Between good balance be required.

Up to now, main use liquid adhesive and binding agent based on epoxide (WO98/ for this purpose 21287A1;US4,051,195A;US4,552,604A)。

Due to highly cross-linked, these binding agents have little diffusion term D.They main use fields are rigid mounts Edge bonds, but is also used for the device of intermediate flexible.Solidify by heat or by UV radiation.Owing to solidification causes receiving Contracting, it is difficult to realize bonding in whole region, because generation stress, stress and then can lead between binding agent and base material during Gu Hua Cause layering (Delaminierung).

The use of these liquid adhesives brings a series of shortcoming.Such as (VOC-volatility has lower-molecular-weight component Machine compound) can sensitive electronic structure in breaking plant can interfere with preparation manipulation.Binding agent is had to complicated side Formula is administered on each single component of device.In order to ensure being accurately positioned, need to use expensive allotter to set with fixing Standby.And, method of application hinder quick continuous print process, due to low viscosity, the layering step needed subsequently be likely to so that The thickness and the bonding width that realize regulation in narrow limit are increasingly difficult.

Additionally, the flexibility that these highly cross-linked binding agents remain after solidification is low.In low temperature range or at two groups In split system, the use of thermal crosslinking systems is limited to working life, and this working life is i.e. until process time during generation gelation.? High temperature range, and particularly in the case of the long response time, sensitive (light) electronic structure limits this body of use in turn In this (light) electronic structure of probability of system, adoptable maximum temperature is usually at about 90 ° of C, because even if above this temperature It can also happen that tentatively damage.Particularly, containing organic electronic element and with transparent polymer film or by polymeric film and inorganic layer The flexible apparatus of the complex encapsulation constituted has narrow restriction at this.This is also applied for the layering step under high pressure.For obtaining The durability improved, advantageously abandons high-temperature hot and carries (Hoch temperaturbelastendent) step and relatively at this Lamination is carried out under low-pressure.

Contact adhesive or hotmelt is advantageously used to be used for sealing this type of (light) electronic structure.In the prior art (such as US2006/0100299A1, WO2007/087281A1, US2005/0227082A1, DE 10 2,008 047 964A, DE 10 2,008 060 113A) use of known pressure-sensitive adhesives.Because particularly by with applying energy and the crosslinking that introduces is anti- The anti-seepage effect that should make this type of binding agent can be improved, so the most preferably using contact adhesive, it is viscous Pass through after conjunction applied energy (such as photochemical radiation or heat) be activable (US2006/0100299A1, WO2007/087281A1)。

Equally, the use of hotmelt is the most also known.Copolymerization of commonly used vinyl at this Thing, such as ethylene-ethyl acetate copolymer (EEA), ethylene-acrylic acid copolymer (EAA), ethylene-butyl acrylate copolymer Or ethylene-methyl acrylate copolymer (EMA) (EBA).Particularly with solar module based on silicon wafer, usually make Ethane-acetic acid ethyenyl ester (EVA) copolymer with crosslinking.Cross-link in this case in the temperature of greater than about 120 ° of C and a level pressure Carry out during seal operation under power.The mechanical load applied due to high temperature or pressure, this technique to many kinds based on organic Quasiconductor or (light) electronic structure manufactured in thin layer process are disadvantageous.But in JP2002260847, refer to equally Go out this operation for Organic Light Emitting Diode.

Other hotmelt based on block copolymer or functional polymer is described in US5,488,266A, WO2008/ In 036707A2, WO2003/002684A, JP2008004561A, JP2005298703A and US2004/0216778A1.For Hotmelt is it is also known that can by the cross-linking reaction caused by the energy that such as applies with photochemical radiation or form of heat Improve performance (such as WO2008/036707A, WO2003/002684A, JP2005298703A, the US2004/ of this type of binding agent 0216778A1)。

Pressure-sensitive or hotmelt the shortcoming used in prior art is in the case of not crosslinking, anti-seepage effect ratio Epoxide-resin glue is low, and the cohesiveness of the especially barrier properties to oxygen, and binding agent drastically declines when higher temperature.Cause This, increase the risk occurring to bubble under heat and wet condition during construction.

Generally with " cohesion () " representing physical effect, it is because of intermolecular and/or intramolecular interaction And there is the combination (Zusammenhalt) of material or mixture of substances.Therefore cohesiveness determines viscosity and the flowing of binding agent Property, they can be confirmed as viscosity and anti-shearing time.In order on purpose improve the cohesion of binding agent, generally additionally entered Row crosslinking, adds (the most crosslinkable) component or other chemical cross-linking agents of reaction for this to binding agent, and/or binding agent stands Ionizing radiation is used as post processing.

Generally with " bonding () " it is expressed as follows physical effect, i.e. this effect is two phases contacted with each other Interface makes two to combine due to the intermolecular interaction of there appearance.Bonding thus affect binding agent on the surface of the substrate Attachment, it can be identified as contact bonding (the most so-called " viscosity (Tack) ") and bonding force (Klebraft).In order on purpose Affecting the bonding of binding agent, usually binding agent adds plasticizer and/or bonding force strengthens resin (so-called " viscosifier ").

First the adhering technique characteristic of binding agent is determined by bonding and cohesion ratio.So the binding agent used is The most cohesion, i.e. have the strongest inside cohesion, this such as should be used to say that critically important for some.

On the contrary, when binding agent heat cross-linking, heat must be transmitted towards adhesive joints by structure.Here, typically require Electricity structure is avoided to damage dangerous temperature.Additionally, it is more difficult for limiting upper heat area to be bonded input.Such as when with When hot padding introduces heat by polymeric film, in order to make heat time heating time the shortest, described hot padding must connect than bonding Temperature to be reached in seam is much higher.This can not only damage polymeric layer and the impervious barrier commonly required when application thereof, and And damage electricity structure by sidepiece hot-fluid.Especially encounter in optional mode local limit heat input difficulty, wherein, Heat (such as by infra-red radiation or the convection current by steam) was inputted before the joint of adhesive joints.

Pressure-sensitive or the hotmelt of crosslinking with radiation again expose possible this defect of electricity structure radiation damage with And this defect of necessity of radiation penetrating component structure.Because it is poly-that assembly, especially organic electronics and many are used Compound is more sensitive, so would be impossible to do not having other Additional Protection measures, such as the feelings of other coverlays generally for UV load Longer outdoor use is adhered under condition.It can UV hardening binding system in UV hardening after-applied, this extra increase The complexity manufactured and the thickness of device.When the difficulty of the applied energy of local limit also appears in crosslinking with radiation.Use is covered Although film can make up, but high cost technically in produced in series.

Shown the ultrasound wave of Organic Light Emitting Diode by the fusing of low-melting point metal alloy in US6,706,316B2 Seal.To this end, insert metal between substrate and covering using as metal wire, and high at 2900 to 14500MPa Extrude in the case of ultrasonic impact under pressure.Because the metallic character of encapsulant, it is necessary to manufacture very in adhesive joints High temperature.The present invention is not particularly suited for polymeric material together with high pressure required in addition.The most only it is expressly recited Glass, metal and pottery.Additionally since the electric conductivity of encapsulant, in the structure must electric insulation layer.

US6,195,142B1 describes in the case of using low-melting glass, metal or liquid crystal polymer (LCP) A kind of similar seal process.It has the shortcoming similar to said method.Process substrate of glass in instances and glass covers Cover material, ultrasonic time is longer, is 20 to 30s.PET is referred to as possible flexible substrates at this, and covering is then by steel or glass system Become.Epoxy resin, polyimide resin and other macromole sticky matters clearly show the poor suitability at this.

High temperature necessary to both approaches expose in addition by heat transfer damage electricity structure danger, described heat transfer this It is outward to be carried by the high-termal conductivity of substrate or cover stock material.

At US6, in 803,245B2, for encapsulating electronic device and be not used to activate binding agent combination of ultrasound quilt It is referred to as the substitute of adhesive bond.

In DE10309607A1, describe a kind of method for encapsulating electronic component functional unit, wherein, be arranged on Encapsulation on functional unit is combined closely with substrate by ultra-sonic welded.Can be in substrate in the preferred implementation of the method And arrange before the ultra-sonic welded between packaging that seal, can the material of ultra-sonic welded.It is preferable that, not only substrate, and Encapsulation is made up of welding thermoplastic, and their own can be to each other by ultra-sonic welded.The deficiency of ultra-sonic welded it Place is, in order to realize the material typical molecule infiltration (counterdiffusion) for welding, as all welding methods, two connect Close being transitioned into melt flows state on its interface.When carrying out molecule because of the incompatibility of material The when of infiltration, on joint face, often use welding auxiliary agent.It is typically fully converted to melt flows state when welding, and And can two interfaces with engage to as the interface of molten state diffuse into one another.On this point, ultra-sonic welded is not Have otherwise varied with other welding methods.Defect is, engages at its section or even existing when thin film is relatively thin at this Damage is received at its gross section.This especially using to encapsulate, equipped with the thin polymer film of inorganic impermeable layer Time occur, thus pad formed reveal danger.

Encapsulant in DE10309607A1 can be chosen at this from glass solder and binding agent, wherein, chooses viscous Clearly refer to as epoxy resin during mixture.When using the binding agent of such as epoxy resin disadvantageously, be necessary liquid or paste The accurate dosage of binding agent of shape form, and be necessary to avoid binding agent to run off while ultra-sonic welded.Because at ultrasonic bond Higher pressure is must be provided with, by acoustic energy guiding structure, to be squeezed from weld seam by liquid glue so being almost not fee from when connecing Go out.

Additionally, encapsulant can be chosen from flexible organic polymer thin film or thermoplastic, they are as weldering Connect auxiliary agent to use.Here, compared to the binding agent quoted before, according to encapsulant and two engage to the compatibility do Go out to select, thus ensure counterdiffusion.Therefore it has significant limitation.Mistake already mentioned above occurs the most in the method The danger that encapsulating material is impaired.

Summary of the invention

It is an object of the invention to provide a kind of improved method and stop penetrant for encapsulating electronic device, especially can be easy And quickly through steam and oxygen, reach good encapsulation purpose simultaneously.Additionally, the life-span of (light) electronic installation should lead to Cross use suitably, especially flexible adhesive and extended.

This purpose will be accomplished by the method as described in independent claims.This method is preferred embodiment Theme for dependent claims.

Correspondingly, the present invention relates to the method that encapsulating electronic device stops penetrant, wherein

There is provided and include at least one hot activable contact adhesive or chip architecture of hotmelt, and

This sheet of the Zoned application knot that need to encapsulate at least about electronic installation in the substrate assemble/include this electronic installation Structure,

For described electronic installation with at least surround its binding agent and arrange covering, wherein binding agent connects with covering Touch, and

The most at least this binding agent of thermal activation on the subregion of adhesive surface, thus formed and at least there is substrate With the complex of covering,

Wherein, activation institute calorific requirement is by substantially self producing in the chip architecture at least including binding agent.

In encapsulating electronic device stops the alternative approach of penetrant, covering is set for this electronic installation, this covering At least surrounding the binding agent of this electronic installation, wherein binding agent at least contacts with covering.

In this application, it is illustrated only as sandwiching completely with described chip architecture as encapsulation, but also represents and exist Chip architecture described in topical application on the region that (light) electronic installation is to be packaged, or one side covers or encirclement electronic structure.

Penetrant in present specification meaning is that those can penetrate into device or assembly, more specifically electronic installation Or photoelectron device or the chemical substance (such as atom, ion, molecule etc.) of corresponding assembly, they are in described device or group Part can specifically cause function to destroy.This infiltration can such as pass through casing or shell itself, also by described casing or shell Opening or occurred by seam, binding site, pad etc..Casing or shell be understood to refer in this sense completely or Part surrounds the assembly of sensing assembly, and it is being also intended to specifically for protecting described sensitivity in addition to they mechanical functions Assembly.

Penetrant in present specification meaning specifically low-molecular-weight organic or inorganic compound, such as hydrogen (H₂), especially oxygen (O₂) and water (H₂O).Described penetrant can be specifically in gas or the form of steam.

The present invention is according to following beat all cognition, i.e. for explaining the most in detail at binding agent internal pair production heat The measure stated does not has any adverse effect, especially himself heating not worth mentioning even to damage for electronic installation.? This, come compared to background technology described in [0008] section of DE10309607A1 for method claimed here Saying, even whole volumes of binding agent are the most heated, in order to produce or to consolidate combination.Additionally, package quality can pass through institute The method recommended is compared to there being beat all significantly improving for traditional heating means.

In the method according to the present invention, what heat was the most favourable is defined on the face being maintained at binding agent.Because Chip architecture self produces heat, so only needing to be heated to activation temperature.And then can abandon based on conduction of heat, radiation or convection current Method for thermograde necessary to smooth heat transfer and resultant overheated.It is thus able to be maintained at heating shorter In time, and strongly limit the lateral hot-fluid on especially electronic component direction.

Additional advantage also resides in, and for electronic structure and substrate and covering, not necessarily sets to produce heat Special measure, i.e. contacts to carry electric current, but it is only by adding the chip architecture contained by binding agent and exterior technology The common effect of measure realizes producing heat inside binding agent.

By different appropriate machinery known in the art, it is capable of in chip architecture self producing heat by them Amount, such as by heat-producing chemical reaction or the heating of physics phase in version (such as crystallization), is heated by resistance, by photochemistry spoke The absorption penetrated, by magnetic induction or due to the interaction with high-frequency electric field, such as microwave radiation.

Come for binding agent skill here, chemical reaction and physical phase transition the most do not have enough (based on volume) specific heat Activation available in art.The part that the conductive material that resistance heating must limit is used as chip architecture is (such as embedding in binding agent Enter conductor or electroconductive binder) and contact for carrying electric current with the external world.High-frequency heating and microwave heating are in chip architecture Interior required special suitable material or the most special proper adhesive (such as on polyamide or polrvinyl chloride basis), They have dielectric loss coefficient that coordinate mutually, sufficiently high with frequency.This has substantially limited to the selection of material.Additionally, micro- Wave heating is difficult to radiation be limited in scope to be heated.The danger being damaged electronic installation by microwave is bigger.

Therefore, by ultrasonic at least containing binding agent chip architecture in produce heat be particularly advantageous.In order to another is used Way known method in WO2009/021801A1.

Ultra-sonic welded is a kind of method for assembling plastics.This can in the case of combining element the most accordingly base Only sweating heat thermoplastic plastic in basis.Only when described thermoplastic is the most compatible with each other when, it obtains lasting combination.When It is incompatible or time non-thermoplastic material should be bonded to each other, it is known that to place the welding auxiliary agent producing the combination that material determines, Such as bonding between place polymeric film.As other welding methods, material must pass through energy in welding or bonding place Amount inputs and activates, such as, melt.Required energy is produced by high-frequency mechanical vibration when ultra-sonic welded.This method main It is characterised by, at part or in welding auxiliary agent, produces welding in weld seam by molecule and/or interface friction or vibration required Energy.

Ultrasonic Heating binding agent is used in this method recommended.At this relative to ultra-sonic welded, the less product of heat It is born in interface, but produces in the material self of binding agent basically by magnetic hystersis loss, by higher machinery decay Coefficient tan δ promotes it.

The ultrasonic device required at this is substantially made up of following assembly:

● generator

● vibrational structure (ultrasonic generator)

● anvil (Amboss)

Supersonic frequency is produced by generator.Line voltage is converted into high pressure and high frequency by it.Electric energy passes through protective wire It is passed to ultrasonic tr-ansducer, the most so-called transducer.Transducer is typically based on piezoelectric effect and runs, and wherein, serviceability is bright True crystal, described crystal extends in set alternating electric field and shrinks.Thus producing mechanical vibration, it is made the transition by amplitude Part is passed on supersonic generator (so-called soldering tip).The size of vibration amplitude can be affected by amplitude part transition. Vibration generally is passed to be fixed on supersonic generator and as the workpiece between the anvil of counter pair under the pressure of 2 to 5MPa On wherein, produce activation needed for heat.

Binding agent is softened by the rising of local temperature, and machinery attenuation quotient rises.The rising of attenuation quotient causes Produce heat further, this guarantees the effect of self-accelerating reaction.Binding agent is according to the fastest work of the present invention Changing, this causes the shortest circulation time and thus preferable economy.

In addition it is advantageous in that, it is possible to limit heating the most gem-pure, because heating occurs over just and changes Compound contacts on the supersonic generator face in scope.

Bonding solidifies after the cooling period.Because supersonic generator persistently bears supersonic vibration, so the requirement to material is non- Chang Gao.In most cases use the titanium of carbide coating.

The method is characterized by the shortest ultrasonic time, and be preferable economy.It is therefore preferable that it is ultrasonic Time is in the scope of 0.1 to 3s.

In order to realize shorter ultrasonic time, favourable is more than 3W/mm by power setting on adhesive surface²。

By chip architecture the most at last as the permanent combination between substrate and covering, additionally can arbitrarily, that This different material be combined with each other by this type of method.

Even if it was unexpectedly determined that electronic installation is positioned under supersonic generator, but do not connect with supersonic generator Touch, also do not have the damage of electronic installation.Such as it is configured to frame shape when the supersonic generator face touched mutually with combination, And when groove is added in supersonic generator face by portion in the frame, this situation such as just often occurs, thus electronics fills Can not contact with supersonic generator when extruding supersonic generator setting in scope therein.

In order to protect the blanket surface contacted with supersonic generator to avoid mechanical failure, preferably at covering and Insert protecting film (loss film) between supersonic generator, or supersonic generator is coated with elasticity from its contact surface Body or viscoelastic material.

In order to the danger of damaged surfaces is kept as the least, favourable by power setting on adhesive surface for being less than 0.5W/mm²。

On the one hand in order to the danger of damaged surfaces is kept as the least, the shortest in order to realize but then Ultrasonic time, the most favourable is 0.5 to 3W/mm by power setting on adhesive surface²。

Therefore the preferred ultrasonic energy obtained from ultrasonic time product and power used is 0.05J/mm on adhesive surface² And 9J/mm²。

In particularly preferred embodiment of the invention, ultrasonic energy is introduced in extensible in a time-continuing process On supersonic generator.Known corresponding ultrasonic technique in the scope of ultra-sonic welded.

In including at least the chip architecture of binding agent, heat is produced by magnetic induction additionally, particularly advantageous.For it His purposes known the method in EP1453360A2.

Compared to Ultrasonic Heating, sensing heating has the advantage that, i.e. the heating of chip architecture is not required for chip architecture or covers Cover material or substrate in external heat equipment directly and against contact, what it was contrary even can be touchless enforcement.Thus Chip architecture the most such as added by loose stacking be capable of according to the present invention with the contacting of substrate and covering.In order to be formed Firm and lasting combination can carry out, in a step subsequently, exert a force (compression adhesive joints).

Additionally, the favourable change of this method is at least to be integrated in compression tool by induction apparatus, because induction field can be This closely bonding place, and also can spatially be limited to this.

Heating in alternating magnetic field can have been contributed by different effects: when the base putting in alternating field to heat When the end has conductive region, will be sensed in this region by alternating magnetic field and cause eddy current.When this region has at this When the resistance of zero, at this, the form with Joule heat (electrical current heat) embodies eddy current line loss.In order to mainly can be formed this type of Eddy current, conductive region then must have minimum dimension；Conductive region is the biggest, from the frequency of the alternating magnetic field of outer setting more Low.

But when introduce the matrix in alternating field in order to heat and have ferromagnetic domains, the unit magnet in this region is respectively It is parallel to outside alternating magnetic field orientation.The same heated substrate of magnetic hystersis loss (core loss) occurred during external magnetic field change.Root According to the material being incorporated in alternating magnetic field, two kinds of effects can joint contribution in heating (ferromagnetic material such as ferrum, nickel and the cobalt of matrix Or ferrimag such as dilval (Mu-Metall) and alnico alloy (Alnico)) or respectively in only two kinds effects one Kind contribute to heating (when non-ferromagnetic metal such as aluminum only eddy current or electric conductivity poor material such as ferric oxide particles time only magnetic hysteresis Phenomenon).

When the cohesible chip architecture of thermal activation is heated by sensing and during thermal activation, usually this uses following chip architecture, I.e. it contains heat activated adhesive binding agent, and described binding agent is arranged on the side of conductive layer, as with metal forming or metallized polyimide Metal lath, metal felt or the metallic fiber of the planar structure of compound film, perforated metal foil, metal gauze, plane extension.The latter Discontinuous plane structure has the advantage that at this, i.e. binding agent can be through each planar structure and the most total by opening Body improves the inside bonding of chip architecture, but this has occurred as soon as the cost that the efficiency of heating surface reduces.

In recent years, the heating of the sensing in bonding becomes focus of attention again.Reason is to now begin to what searching can use Nanoparticle system, such as(Evonik AG), it can join in the material of matrix to be heated, And so realize the heating on the whole volume of matrix, and the most therefore its mechanical stability is caused bigger damage.

It is a kind of small by the ferric oxide particles of Silica-coated.

Can get trade mark from such as Lohmann company is DuplocollAdhesive tape, it contains in binding agent The nano-particle of heating can be sensed.Core isInteraction with magnetic field.

WhenContained binding agent stand faster alternating magnetic field time, ferric oxide particles begins to vibration Can be compared with compass needle.At this in binding agent autotelic generation heat, rapid curing after described binding agent.Because no Must heated components further, which save the heat energy of preciousness, production process can be the most significantly accelerated.

In principle, the various heaters being used for sensing heating are known；Additionally, they can come according to frequency in addition Distinguishing, described frequency has with alternating magnetic field produced by respective heater.Therefore, it is possible in the case of using magnetic field Realizing sensing heating, the frequency in described magnetic field is (the most so-called intermediate frequency in the frequency range of about 100Hz to about 200kHz； MF), (the most so-called high frequency or in the frequency range of about 300kHz to about 100MHz；HF).

Yet with the size that nanoscale system is less, this type of product can not be made in alternating magnetic field with intermediate frequency model Frequency in enclosing effectively heats.More precisely require the frequency in high-frequency range for novel system.But just exist During this frequency, the risk that electronic component damages in alternating magnetic field is exposed.Additionally, form friendship with the frequency in high-frequency range Varying magnetic field needs higher equipment to spend, and therefore in economy and improper.

It is therefore preferable that the frequency in use intermediate frequency range.It was unexpectedly determined that organic electronic part is described just Frequency range self is not subject to heating or other damage.

In order to obtain the higher process velocity required by industrial manufacturing process, the heating of the chip architecture of heat-activatable bonding Time is the shortest.It is therefore preferable that heat time heating time is 0.1 to 10s.

Require as follows to reach required tack temperature, i.e. select the highest rate of heat addition.But when right at joint Between when bonding the cohesible chip architecture of described thermal activation, it only has relatively low heat conductivity, say, that heat conductivity is up to 5W/mK, so the heat sensing generation in chip architecture can not be by its sufficiently fast derivation.First heat rests on A period of time in adhesive surface, form thermal chokes the most there.Therefore, chip architecture and bonding to can hot-spot, and by This damages.When compared with low heat conductivity bonding to when there is the most relatively low thermal capacity extraly, overheated danger is the highest, be because of For so not providing the probability of interim heat accumulation.The two is such as follows in bonding centering situation, and i.e. it has at adhesive surface There is polymer.

Therefore it is an advantage of the current invention that wherein, be perpendicular to that thermal activation can the side cross-section of bonding sheet structure be basad, sheet The pre-complex of structure and covering and sensing heating apply the pressure (extruding of minimum 1MPa, the most minimum 3MPa simultaneously Power), thus binding agent contacts with bonded substrate comprehensively." be perpendicular to thermal activation can the side cross-section of bonding sheet structure " this side To here meaning that, for plane bonds, wherein chip architecture (and two side) is plane, pressure (main) Acting perpendicularly to the main extension of chip architecture, contrary, for three-dimensional circular arch bonding, pressure acts on and is perpendicular to chip architecture On main bearing of trend, and therefore in subregion at least across the side being perpendicular to chip architecture.

The inventive method can be implemented in the case of heating agent (induction apparatus) for sensing typically sensing of heating using. Consider all routines and suitably device be used as sensing heating agent (induction apparatus), the coil that i.e. alternating current flows through, conductor returns Line, they are due to the electric current that flows through and the alternating magnetic field forming proper strength.Therefore, it is possible to by the corresponding number of turn and loop length Coil device provide the magnetic field intensity needed for heating, corresponding electric current to flow through described coil device, its such as some sense Answer device.Constitute it without electromagnetism core, but or there is ferrum or the core of compacted irons ferritic powder body composition.Bonding can be straight Connect the magnetic field standing to be thusly-formed.Optionally, certainly it is also possible that arrange that above-mentioned coil device is as magnetic field transducer (transformation Device) main coil on main face, secondary coil is wanted to provide corresponding higher electric current on face secondarily.With the direct close installation of bonding Real magnet exciting coil thus can have the relatively low number of turn because of higher electric current, and reduces alternating magnetic field the most therefrom Field intensity.

Additionally, sensing heating particular advantage is, compared with the most permanent conduction heating by antiseepage film or ratio Playing mechanical ultrasonic heating, the inorganic impermeable layer existed damage danger in substrate and/or covering is by binding agent inside The ofest short duration thermal pulse significantly becomes less.

Currently preferably use metal forming, polymeric film, composite membrane or be provided with the organic and/or thin film of inorganic layer or compound Film is as the base material for electronic installation.This type of thin film/composite membrane can be by all gold being commonly used in thin film fabrication Belong to and/or plastics constituted, be listed below, and be not limited to this:

Steel, aluminum, copper, polyethylene, polypropylene-especially by uniaxially or biaxially stretch formation oriented polypropylene (OPP), Cyclic olefine copolymer (COC), polrvinyl chloride (PVC), polyester-especially polyethylene terephthalate (PET) and poly-naphthoic acid Glycol ester (PEN), vinyl-vinyl alcohol copolymer (EVOH), Vingon (PVDC), Kynoar (PVDF), poly- Acrylonitrile (PAN), Merlon (PC), polymethyl methacrylate (PMMA), polyamide (PA), polyether sulfone (PES) or polyamides Imines (PI).

Base material can also combine organic or inorganic coating or layer.This can pass through conventional method such as surface-coated, print Brush, vapour deposition coating, sputtering, coextrusion or lamination are carried out.Example includes but not limited to, the oxide of such as silicon and aluminum or nitrogen Compound, tin indium oxide (ITO) or sol-gel coating.

It is particularly preferred that these film/composite membranes (especially polymeric film) are provided with the antiseepage barrier to oxygen and steam, Wherein this antiseepage barrier exceedes the requirement (WVTR < 10 of packaging field^-1g/(m²d);OTR<10^-1cm³/(m²D bar), especially WVTR<10^-2g/(m²d);OTR<10^-2cm³/(m²d bar))。

The permeability (OTR) of oxygen and the permeability (WVTR) of steam respectively according to DIN53380Teil3 (OTR) and ASTM F-1249 (WVTR) determines.The permeability of oxygen is measured for 50% time at 23 ° of C and relative humidity.Wet with relative at 37.5 ° of C Spend the permeability measuring steam for 90% time.Result normalizes to the thickness of 50 μm.

Just offer the advantage that for this type of film being provided with impervious barrier according to the method for the present invention, i.e. make heat input The damage of the most possible impervious barrier structure minimizes.

The most in a preferred embodiment, film/composite membrane can be with transparent form, thus such electronic structure is whole Body structure is also transparent form, or at least light enters electronic structure.In the present invention, " transparent " refers at visible-range Mean transmissivity is at least 75%, preferably when wavelength is 400 to 800nm higher than 85%, measures according to ASTM D1003.Substrate Transparency or transmitance depend on its extinction coefficient, surface reflection and the wavelength of the light for institute use.Delustring Coefficient is material behavior, and depends on the absorption of material therefor.The material higher in order to obtain absorbance, it is necessary to both avoid inhaling Receive and also avoid reflection.

Reflection occurs on all surface and material interface.On the one hand it depend on the surface roughness of material therefor, separately On the one hand the refractive index of material therefor is depended on.The most extra scatter.Described by Fresnel equation Mutual relation between reflection and the refractive index of adjacent layer of interface.For relate to transparent material and beam orthogonal incident and For can ignore that wavelength affects this special circumstances, Fresnel equation can simplify as follows:

R=(n₂-n₁)²/(n₂+n₁)² GI.1

Reflection on R=interface

n₁The refractive index of=medium 1

n₂The refractive index of=medium 2

Air refraction n_Air≈1

Reflect on currently all interface, and therefore reduce the absorbance of object.Light beam both also existed when inciding in film Fresnel reflection law is followed during outgoing from film, so such as it can be considered that refractive index is n₂The maximum of the polyester film of=1.6 can The transmission the reached value less than 90 °.

Not only binding agent and also also carrier thin film be preferably transparent, and be described below, the most transparent binding agent is preferred Having the transmitance more than 60%, especially when wavelength is at 400 to 800nm, transmitance is more than 85%, true according to ASTM D1003 Fixed.

Generally give transmitance (being the most also referred to as transmission) with %, refer to the luminous power on the light transmission matrix back side Rate and the ratio of front incident optical power.Subtracted by reflection and absorption and absorbance.

Namely: absorbance=(1-reflectance-absorbance).

Identical thin film or composite membrane can be used in principle to be used as covering, as its use in base material Situation is such.Here, substrate and covering can be different in the complex containing electronic structure.Such as and infrequently want The two sides seeking complex is transparent such that it is able to form transparent substrates and the encapsulation of non-transparent cover.

Because as depicted, base material and covering are often made up of combination of materials, and it can not pass through Welding method (such as ultra-sonic welded, induction welding) combines, so the most commonly used hotmelt Or the chip architecture of contact adhesive is for bonding.

The advantage of the advantage and adhesive bond that generate heat in chip architecture self is combined by the present invention, wherein, is gone out The synergism expected, the extreme of such as package quality improves and relative to using fluid binder or the feelings of welding auxiliary film For condition, material selects and the greatly simplifying of process implementing.Dispense during composite bed combination expensive particularly with the use of adhesive Location and fixation.

According to the present invention prepare include at least one activable binding agent chip architecture/layer material and subsequently with substrate or Covering contact, it should also include this type of method, the most activable binding agent constitute layer method in be applied in substrate or On covering, such as, it is coated with, extrudes, sprays or coextrusion.Be made up of activable binding agent and substrate or covering is such The composite prepared such as is known as the heat sealing film in packaging area, and also has been used to sealed electronic structure, example PECHM-1 film such as Peccel Technologies company of Japan.

In an advantageous embodiment of the present process, the pre-complex of substrate or cover stock material provides chip architecture.Example As substrate and chip architecture can be just already integrated in substrates before being applied to electronic installation.Alternatively, covering and chip architecture are also Can be firstly inserted in pre-complex, and be placed on electronic installation.The method of the pre-complex of the known manufacture of professional, institute Such as it is laminated using, is coated with, extrudes, sprays or coextrusion.

Suitable constructions that is the most all common and that have actually plane form extension can be considered in the application category Chip architecture.This achieves plane bonding, and can have different moulding, the most flexibly as adhesive foil, adhesive tape, do not do Glue label or shaping membrane.Chip architecture can be configured to the chip architecture cut out, in order to reduce electronic installation heat waste in heating process The mating shapes of bad danger, its shape and adhesive surface.

In the category of the application, chip architecture specifically has both sides, a front and a back side.Front and back general Read that to be parallel to its two surfaces mainly extending (surface extension, main extended surface) with chip architecture at this relevant, and be only used for distinguishing The plane that other the two is arranged on the opposite face of chip architecture, and the selection not by concept determines the sky that two faces are absolute Between arrange；Therefore, namely when the back side defines its most preposition side, front can also be chip architecture spatially Rearmounted side.

Bonded substrate should be bonded by the cohesible chip architecture of described thermal activation with covering.To this end, chip architecture its two Have at least one in side on two sides, be the most preferably respectively provided with the cohesible binding agent of thermal activation.Heat activated adhesive Binding agent is to add heat bonding at relatively high temperatures and provide all binding agents of the combination mechanically can born after the cooling period. It is said that in general, binding agent is presented in adhesive phase.In simplest situation, chip architecture is by the most heat-activatable Adhesive phase is constituted, bonding with substrate and covering with its two sides.

The plane of Elementary Function system arranges and is referred to as layer, its on direction in space the size ratio of (thickness and height) at two On other directions substantially little, other directions have defined main extension (length and width).Especially when the unit participating in layer Time functional, this type of layer can be configured compact or also have a perforation, and constitutes by homogenous material or by different materials.Layer exists Its whole plane can have uniform thickness on extending, or has different thickness.Additionally, layer can also have many certainly In the function of.

Single layer structure is because its simplification is particularly suitable for Ultrasonic Heating.In order to particularly effectively carry out Ultrasonic Heating, can The binding agent of activation has the loss factor tan δ more than 0.1 when 23 DEG C and to have the frequency of 1Hz be favourable.

In order to avoid self the intrinsic heating when Ultrasonic Heating of substrate or covering, determine under the frequency of 23 DEG C and 1Hz Difference

tanδ_{Binding agent}-tanδ_{Substrate or covering}More preferably at least 1.

Under 23 DEG C and 1Hz frequency, polymer such as hotmelt is determined according to DIN53445 in twisting vibration is tested Loss factor.

By under torque load under the frequencies of 23 DEG C and 1Hz in oscillatory shear test (dynamic mechanical analysis, DMA) really The loss factor of level pressure sensitive adhesive.This test is used for studying rheological behavior, and (" plastics and the elasticity such as Paar in Paar The actual flow degeneration of body ", VDI version, 1995, in page 57 to 60 and page 119 to 127) describe in detail.Shearing in Ares company The flow graph of controllable-rate carries out under torsional load this test, wherein, the flat board-flat board geometry using plate diameter to be 25mm Shape.

The chip architecture of single layer structure can also be used for sensing heating.To this, self preferably have at 23 DEG C of activable binding agents Having the electric conductivity more than 20MS/m, this is the most inaccessiable for self conductive polymer, but leads in filling Can reach in the case of electricity filler.Conduction is determined according to ASTM D2739-97 when 23 DEG C and 50% relative air humidity Property.Alternatively or additionally, by adding granule, the most above-mentioned nano-particle, binding agent can be designed to ferromagnetism, ferrous iron Magnetic or paramagnetism.

Advantageously, in order to sense heating, there is the layer that at least three is different according to the chip architecture of the present invention, i.e. at least one The adhesive phase of individual conductive layer and at least one heat activated adhesive and another adhesive phase.Another adhesive phase energy described Enough identical or different with the binding agent of at least one heat activated adhesive described.Thus another adhesive phase such as can The binding agent that comprises heat activated adhesive or even comprise the most heat-activatable contact adhesive.

Can constitute at least one conductive layer in principle suitably according to wish, such as thin overall compact or wear The layer (such as grid) in hole.Preferably, the thickness of conductive layer is less than 50 μm, especially less than 20 μm or even less than 10 μ m.The latter makes the rate of heat addition upwards to be limited in a relatively simple manner.

Conductive layer can be made up of all common suitable materials, such as, closed by aluminum, copper, gold, nickel, dilval, aluminum nickel cobalt Gold, permalloy, ferrite, CNT, Graphene and similar material are constituted.Conductive layer is preferably also extra in magnetic at this Property, especially ferromagnetism or paramagnetism.The electric conductivity that conductive layer advantageously has at this more than 20MS/m (is equivalent to less than resistance In 50m Ω mm²/ m), the electric conductivity of especially greater than 40MS/m (is equivalent to than resistance less than 25m Ω mm²/ m), exist respectively 300K determines.

Except at least one conductive layer described, chip architecture can also have other conductive layer certainly；They can with institute State at least one conductive layer identical or different.

The cohesible chip architecture of thermal activation can present any appropriate moulding generally.So chip architecture is in addition to aforementioned layers Can have other layers, the most permanent carrier or temporary transient carrier.

In order to reach enough bonding strength when relatively small thickness, adhesive phase advantageously can have 5 μm thickness to 20 μm Degree.Conversely, for firm especially adhesive bond, thickness favourable for 100 to 500 μm.

The adhesive composition that substantially can use all common heat activated adhesive is used as at least one heat described and lives Change the binding agent of bonding.The binding agent of heat activated adhesive can be basically divided into two classes: the binding agent of thermoplastic heat activated bonding is (warm Melt adhesive) and the binding agent (reacting adhesive) of reaction heat activated adhesive.This division also includes following binding agent, and it can be concluded Binding agent (reaction heat melt adhesive) for above two classification, i.e. reaction heat plasticity heat activated adhesive.

Thermoplastic adhesives based on following polymer, its softening reversible when heating, and while cooling again Solidification.In contrast, the binding agent of reaction heat activated adhesive contains reactive ingredients.The latter's component is referred to as " reactive tree Fat ", wherein by adding thermal initiation cross-linking process, even if it also can guarantee that the most steady after cross-linking reaction terminates when bearing pressure Fixed combination.These type of thermoplastic adhesives are preferably possibly together with the nitrile rubber of elastomeric component, such as synthetic.This type of is elastic Even if the size that body component the most also gives the binding agent of heat activated adhesive the highest because of its higher kinematic viscosity is steady Qualitative.

Subsequently by the typical system of the purely exemplary binding agent introducing some heat activated adhesive, it is with the present invention's Context is indicated very favorable one side.

The binding agent of thermoplastic heat activated adhesive contains thermoplastic base polymer.It has the most at low pressures There is preferable mobile performance such that it is able to arrange for the fastness of durable adhesion critically important in shorter extrusion time Final bonding force, and therefore can also carry out quick-binding on the basis of coarse or other keys.Can use all Thermoplastic adhesives known in the prior art are used as the binding agent of described thermoplastic heat activated adhesive.

The heat-activatable binding agent of those as described in DE102006042816A1 is e.g. suitable for, but not office It is limited to description therein.

Exemplary composition is described in EP1475424A1.So thermoplastic adhesives can comprise one or more Following component or be made up of them: polyolefin, ethylene-vinyl acetate-copolymer, ethylene-ethylacrylate-copolymer, Polyamide, polyester, polyurethane or butadiene-styrene-block copolymer.Preferably use EP1475424A1's [0027] thermoplastic adhesives mentioned in section.Describing other thermoplastic adhesives in EP1956063A2, it is especially suitable In special application, such as, it is particularly suitable for the bonded substrate that bonding is made up of glass.Following thermoplasticity is preferably used to glue Mixture, improves its melt viscosity by rheologic additive, such as by add pyrogenic silicic acid, carbon black, CNT and/or its His polymer is as blending components.

On the contrary, the binding agent of reactive heat activated adhesive advantageously has elastomer class base polymer and modified resin, Wherein said modified resin includes binder resin and/or reaction resin.Owing to employing elastomer class base polymer by energy Access the adhesive layer with high dimensional stability.Can use in all prior aries corresponding to the most concrete application The binding agent of the heat activated adhesive known is as the binding agent of reactive heat activated adhesive.

It the most also comprises base polymer based on nitrile rubber or derivatives thereof such as nitrile rubber or these bases are poly- The film of the reactive heat activated adhesive of the mixture (blend) of compound, its extra reactive tree containing such as phenolic resin Fat；With title tesa8401 this series products commercially available.Nitrile rubber gives the viscous of thermal activation due to its higher kinematic viscosity Conjunction film is with outstanding dimensional stability, thus, can realize higher bonding force after implementing cross-linking reaction on frosting.

Certainly the binding agent of other reaction heat activated adhesive can also be used, such as following binding agent: it comprises mass fraction Be 50 to 95 weight % can adhesive polymer and epoxy resin that mass fraction is 5 to 50 weight % or multiple epoxy resin mixed Compound.Can the adhesive polymer acyclic compound that comprise 40 to 94% weight % favourable at this and/or formula be CH₂=C(R¹) (COOR²) methacrylic compound (R¹Here represent selected from H and CH₃Residue, and R²Here represent selected from H and The residue of the alkyl chain of 1 to 30 carbon atom of straight or branched), the first copolymerizable vinyl monomer of 5 to 30 weight %, It at least has acid groups, especially carboxylic acid group and/or sulfonic group and/or phosphate, and the second of 1 to 10 weight % is copolymerizable Vinyl monomer, it at least has epoxide or anhydride-functional, and the 3rd copolymerizable vinyl of 0 to 20 weight % Monomer, it at least has a functional group, the functional group of its vinyl monomer copolymerizable with first and copolymerizable with second The functional group of vinyl monomer is different.This type of binding agent achieves the bonding with fast activating, and wherein within a short period of time is just Reach final bonding force, thereby ensure that overall higher strong bonded at the bottom of nonpolar group.

The binding agent of another applicable reaction heat activated adhesive providing special advantage comprises 40 to 98 weight % Block copolymer containing acrylate, the resinous principle of 2 to 50 weight % and the curing agent component of 0 to 10 weight %.Resinous principle Containing selected from one or more following resins: promote the epoxy resin of bonding force (thickening), linear phenol-aldehyde resin And phenolic resin (Novolakharze).Using curing agent component is the resin crosslinks in order to make resinous principle constitute.This type of is said Method has following special benefits due to its physical crosslinking stronger in polymer, can access with bigger integral thickness Adhesive phase, and at this overall load-bearing capacity damaging bonding.Adhesive phase is thus very suitable for compensating in substrate Irregularities.Additionally, this type of binding agent has good resistance to ag(e)ing and relatively low venting event, this is in many electronics regions Bonding in be very favorable.

As it was previously stated, but in addition to particularly advantageous binding agent, in principle can also be for being used for bonding respective institute The character (Profil) required is chosen and uses every other heat activated adhesive binding agent.

The adhesive system of steam or oxygen permeability relatively low heat activated adhesive is preferably used for encapsulating (light) Electronic structure.Such as this type of activatable adhesive EP0674432A1, US2006/0100299A1, WO2007/087281A1, In DE102009036970A, JP2005298703A, EP1670292A and US2007135552A known.In this art technology Personnel are it is known that i.e. when adding corresponding initiator, such as, during peroxide, can activate binding system also by actinic radiation Such as can be activated by calorifics easily by UV radiation.

Preferably, adhesive composition has less than 100g/m²D, especially less than 10g/m²The WVTR of d and/or be less than 8000cm³/m²D bar, especially less than 3000cm³/m²D bar and the most particularly less than 100cm³/m²The OTR of d bar.

Preferably as the time of break-through of penetrant can be obviously prolonged by adhesive joints at this, so binding agent system Bulk cargo is furnished with the capture material for penetrant (such as oxygen, steam).For professional, such as at US6,936, As described in 131 (B2), these materials known under the title of Getter, Scavenger or Desiccant.

Very particularly preferably use catch characteristic through calorifics or mechanical activation capture material ( ).Calorifics activation or mechanical activation are such as interpreted as at this chemically or physically changing, the destruction of sheathing material or will be received Penetrant discharge and/or discharge.Its advantage is as follows, i.e. can process under the air ambient containing steam described in catch Catch material, and in final structure, substantially do not limit its carrying capacity to catching penetrant.Such as obtain micropackaging Catcher.

When applying extruding force to complex while sensing heating, require extra extrusion equipment for this. All equipment being suitable for extruding can be as described extrusion equipment, and the extruder of such as discontinuous work, such as Pneumatic extrusion Machine or hydraulic press, eccentric extruder, crank-type extrusion press (Kurbelpresse), curved bar structures extruder (Kniehebelpresse), screw extruder or similar extruder, or the extrusion equipment of work continuously, such as compression roller. Described equipment can be set to separate unit, or be combined existence with induction apparatus.Following equipment is preferably used, and it contains at least one Pressure ram element has sensing heater means in addition as the first compression tool, described pressure ram element.Thus can make sensing Field is very close to bond locations to be combined, and the most spatially limits the plane of bond locations.

Accompanying drawing explanation

Below with reference to preferred illustrative embodiments further illustrate other details of the present invention, purpose, feature and Advantage.In the accompanying drawings:

Fig. 1 shows the schematic diagram of first (light) electronic installation.

Fig. 2 shows the schematic diagram of second (light) electronic installation.

Fig. 3 shows the schematic diagram of the 3rd (light) electronic installation.

Detailed description of the invention

Fig. 1 shows first embodiment of (light) electronic installation 1.This device 1 has substrate 2, arranges electricity on this substrate Minor structure 3.Substrate 2 itself is designed as the barrier form of penetrant and is consequently formed the part of encapsulation for electronic structure 3.Performance Other covering 4 for barrier form is arranged in above electronic structure 3, in this example, there is also space length therebetween.

It addition, in order to from side encapsulation electronic structure 3 and simultaneously by the remainder knot of covering 4 with electronic installation 1 Closing, in substrate 2, the periphery along electronic structure 3 provides hotmelt 5.Covering 4 and substrate 2 are combined by chip architecture 5.This Outward, by the structure of suitable thickness, chip architecture 5 can also make covering 4 separate with electronic structure 3.

Chip architecture 5 is binding agent based on cross-linked vinyl aromatic block copolymers as described above in general, under The illustrative embodiments in face is stated in more detail.In this example, chip architecture 5 not only plays and combines substrate 2 and covering 4 Effect, but also is additionally provided the barrier layer of penetrant, thus side encapsulation electronic structure 3, prevent penetrant such as steam with Oxygen.

It addition, in this example, chip architecture 5 also provides with the form of comprise two-sided tape die-cut.This die-cut energy Enough particularly simple use.

Fig. 2 shows the alternative embodiments of (light) electronic installation 1.Again show that electronic structure 3 is arranged in above substrate 2 And by substrate 2 from following encapsulation.Chip architecture 5 is now arranged in above electronic structure 3 and on the whole region of side.Therefore, electricity Minor structure 3 is encapsulated by chip architecture 5 at these points.Then covering 4 is applied to chip architecture 5.Contrary with aforementioned embodiments, institute State covering 4 to be not required to meet high antiseepage requirement, because chip architecture itself has been provided for barrier.Such as, covering 4 Only play mechanical protection effect, or can also the form of antiseepage barrier be additionally provided.In the apparatus, the heating of chip architecture 5 It is possible not only to include whole adhesive phase, and it is alternatively possible to include only a part surface, the most not overlay electronic structure Region.

Fig. 3 shows another alternative embodiments of (light) electronic installation 1.Contrary with aforementioned embodiments, now it is configured with Two kinds of chip architectures 5a and 5b, they show as identical form in this example.First structure 5a is arranged in the whole district of substrate 2 On territory.Then providing in chip architecture 5a by electronic structure 3, described electronic structure is fixed by chip architecture 5a.Then will include The assembly of chip architecture 5a and electronic structure 3 is covered by another chip architecture 5b on whole region, and result electronic structure 3 is all Face is encapsulated by chip architecture 5a or 5b.Then, again covering 4 is provided on chip architecture 5b.Alternately, at this dress In putting, chip architecture 5a or 5b or both can intrinsic heat.

Therefore, in this embodiment, substrate 2 and covering 4 the most not necessarily have barrier properties.But, in order to enter One step limits the penetrant infiltration to electronic structure 3, it is also possible to configures them and has barrier properties.

For Fig. 2,3, must pay special attention to these figures in this application is schematic diagram.Particularly, can not be substantially from figure Going out, chip architecture 5 applies herein and the most in each case with uniform layer thickness.Therefore, at electronic structure transition position, Being formed without the sharp edges as there appear to be in figure, this transition is smooth and may retain little unfilled on the contrary Or the region that gas is filled.But, if appropriate, it is also possible to substrate is transformed, execute the most under vacuo Tu Shi.It addition, chip architecture by partial compression in various degree, therefore due to flow process, can be to the height at marginal texture Difference carries out some and compensates.Additionally, what illustrated dimension was not drawn to scale, and only for being easier to represent.Particularly, electronics Structure itself generally occurs the design (thickness is often less than 1 μm) of relatively flat.

In all illustrative embodiments illustrated, use chip architecture 5 with the form of adhesive tape.In principle, it can be There is the two-sided tape of carrier, heat-activatable film or transfering belt.Select the scheme of heat-activatable film in this application.

Form by transfering belt, the form with heat-activatable film or to exist in the way of being coated in planar structure Thickness preferably about 1 μm of chip architecture to about 150 μm, more preferably from about 5 μm are to about 75 μm, and the most about 12 μm are to about 50 μm.When purpose is to obtain the adhesiveness improving substrate and/or the damping in (light) electronic structure Time, use the high thickness of 50 μm～150 μm.But, shortcoming now is that infiltration cross section increases.1 μm～the low layer of 12 μm Thickness reduces infiltration cross section, and then reduces horizontal infiltration, and the integral thickness of (light) electronic structure.But, now to base The adhesiveness of material also reduces.In particularly preferred thickness range, (thus produce low infiltration to cut at low composition thickness Face, reduces infiltration) and the composition film (producing enough bondings) of adequate thickness between exist good compromise.Optimum thickness With (light) electronic structure, final application, the character of chip architecture embodiment, and flat base (if possible) is relevant.

Test method

Life test:

By the potting degree of bonding sheet structure and distinct methods parameter can be defined as target and glue for different thermal activations Close the eigenvalue of quality.The tightness of encapsulation directly acts on the life-span of (light) electronic structure.

Use CAL (Calciumtest) measuring as (light) the electronic structure life-span.To this end, in a nitrogen atmosphere will A size of 10x10mm²Thin calcium layer be deposited on glass plate (substrate).The thickness of calcium layer is about 100nm.Envelope for calcium layer It is 30mm × 30mm and the gap width of heat-activatable binding agent that dress places the length of side around calcium mirror the most in a nitrogen atmosphere (Stegbreit) it is the shaped as frame chip architecture of 2mm, and thin glass sheet (200 μm, Schott company) is set to covering.Viscous Mixture calorifics subsequently activates, and wherein adhesive surface compresses with different pressure according to selected binding agent.Carry out at soak time Afterwards, also continuation is pressed 30 seconds, and remove extrusion equipment later.Owing to the glass of non-permeable glass substrate and adhesive tape covers Cover material, only determines infiltration by adhesive surface.

This test is based on calcium and steam and the reaction of oxygen, such as in documents below: A.G.Erlat et al. is at " 47th Annual Technical Conference Proceedings-Society of Vacuum Coaters”,2004,654- In page 659, and M.E.Gross et al. is at " 46th Annual Technical Conference Proceedings- Society of Vacuum Coaters ", described in 2003,89-92 page.The light transmittance of monitoring calcium layer, this light transmittance is because of calcium Layer is converted into calcium hydroxide and calcium oxide and increases.It is up to the time not having the half of the transmission of the corresponding test equipment of calcium mirror It is referred to as the life-span.Select 60 DEG C and 90% relative air humidity as test condition.

Vision and manual operation evaluation

Because especially soft (light) electronic structure is encapsulated between the polymer PET of modification, use in experiment later Thickness is the polymer PET of 100 μm, the Melinex506 film of such as Teijin-DuPont-Films company.Because film self is not There is antiseepage barrier layer, be unable to carry out life test.Thus only by vision, bonding is evaluated, and combining Formation state on manual test bonding.

The activatable adhesive used

Binding agent 1 (contact adhesive):

50 parts of Kraton FG1924 are containing 13 weight % block polystyrene, 36 weight % diblocks and 1 weight % maleic acid Maleic anhydride modified SEBS, from Kraton

50 parts of Kraton FG1901 are containing 30 weight % block polystyrene, without diblock and the horse containing 1.7 weight % maleic acids Carry out anhydride modified SEBS, Kraton

The hydrogenation KW resin of 115 ° of C of 70 parts of Escorez5615 softening points, from Exxon

25 parts of Ondina917 are by paraffin distillate and cycloalkyl fraction (parafinic and naphthenic Fraction) white oil formed, from Shell

1 part of acetopyruvic acid aluminum

Contact adhesive is prepared by solution.To this end, single each component is dissolved in toluene (solid content is 40%), it is coated with Cloth is to 1.5g/m²Silication release paper on, and be dried 15 minutes at 120 ° of C, so obtaining weight per unit area is 25g/m²Viscous Mixture layer.Cover on transfering adhesive with another release paper when depositing.Carry out by disintegrating the coordinate bond of aluminium chelate compound Activation, viscosity the most acutely declines, and activation temperature is about 120 DEG C.

Binding agent 2 (hotmelt):

100 parts of SiBStar103T contain three block SiBS of 30 weight % block polystyrene, from Kaneka company

20 parts of SiBStar042D contain the diblock SiB of 15 weight % block polystyrene, from Kaneka company

Hotmelt is prepared by solution.To this end, single each component is dissolved in toluene (solid content is 40%), it is coated with Cloth is to 1.5g/m²Silication release paper on, and be dried 15 minutes at 120 ° of C, so obtaining weight per unit area is 25g/m²Or 13g/m²Adhesive phase.So the film that pure hot melt material is constituted can be obtained after removing release paper.Activation temperature is about 95℃。

Binding agent 3 to 7:

The heat-activatable binder film using the different thickness on the basis of different chemical is used as the heat-activatable of other Binding agent (is shown in Table).Here, a part may be with commercially available heat-activatable film (the tesa SE or the Peccell of Japan in hamburger Technologies Inc.) relevant.

Table 1 below shows other binding agents used:

Abbreviation:

N/P: nitrile rubber (Nitrilkautschuk)/phenolic resin (Phenolharz)

PA: copolyamide

PET: copolymerization fat

SR/EP: synthetic rubber/epoxy resin

MI: modified ionomer

Tesa8471 is thermal crosslinking systems based on nitrile rubber/phenolic resin (" thermosetting ").

Tesa8440 is pure hotmelt (thermoplastic) based on copolyamide.

Tesa8464 is pure hotmelt (thermoplastic) based on copolymerization fat.

Tesa8865 is thermal crosslinking systems based on nitrile rubber/epoxy resin (" thermosetting ").

Binding agent 8 (contact adhesive):

25 parts of Oppanol B15 polyisobutylene, BASF AG, M_w=75,000g/mol

5 parts of Oppanol B100 polyisobutylene, BASF AG, M_w=1,100,000g/mol

The hydrogenation KW resin of 115 ° of C of 50 parts of Escorez5615 softening points, Exxon company

20 parts of DCP dimethacrylate dicyclo dodecane-diformazan alcohol esters, dimethacrylate monomer, from Sigma- Aldrich

1 part of double lauroyl of DLP peroxidating

Contact adhesive is prepared by solution.To this end, single each component is dissolved in heptane (solid content is 45%), it is coated with Cloth is to 1.5g/m²Silication release paper on, and be dried 15 minutes at 100 ° of C, so obtaining weight per unit area is 25g/m²Viscous Mixture layer.Cover on transfering adhesive with another release paper when depositing.Activation temperature is about 120 DEG C.

The manufacture of chip architecture

In order to obtain being thinner than the thickness of commercially available binding agent, may in the case of thicker product is dissolved in 2-butanone or In toluene, and by adhesive phase that is floating and that be dried to obtain necessary thickness from solution.The thickness selected for manufacturing chip architecture Degree is shown in above table.

In order to sense heating and at the film that each overlaminate thickness is 13 μm of conducting strip structure.Use the aluminium foil of 36 μ m-thick As the conducting strip structure for sensing heating.Metal forming and adhesive phase about 90 DEG C to 110 DEG C at a temperature of be laminated to Together.Here, thermoplastic film viscosity is enough, and have not occurred chemical crosslink reaction, but only cause attachment.

The substrate used and covering

For life test, float glass sheet and a size of 50 × 50mm using thickness to be 3mm²As substrate With as covering.

Additionally, the polyester of the Melinex506 type of the Teijin-DuPont-Films company using thickness to be 100 μm Film.

The enforcement of the inventive method and result

By use Hermann Ultraschalltechnik company PS MPC (+) numerical control ultrasonic device implements to glue Close.This equipment works under 35kHz, and maximum weld efficiency is 1000W.Use specific titanium carbide Sonotroden (super Sonic soldering pole), it has the shape of the adhesive surface for CAL.Given pressure is introduced (relative to bonding with this sonotrode Face) and ultrasound wave.Sample was mechanically anchored on anvil (Ambo β) before ultrasonic activation.In order to realize the solidification of sticky matter, Ultrasound wave also continues to after closing keep pressure 30 seconds.

Table 2 clearly illustrates to be tested and result:

Test shows and can manufacture encapsulation in the process of the present invention, only by the Penetration Signature activating binding system used (especially for steam) determines its tightness.By adhesive bonding method, the general phase of sample that macroscopically can not fully seal Instead demonstrate the life-span less than 1 hour.

Sensing heating

Adjusted EW5F type sensing apparatus by IFF GmbH company (Ismaning) implements adhesive bonding method.At this In, the coil being equipped with ferrite nuclear core is used as local provides the induction apparatus of alternating magnetic field.Fig. 4 in side view (by than Example) schematically illustrate this device:

Wherein, 11 is the Rotating fields for CAL, and 12 is ferrite nuclear core, and it is wound around by coil 13.Ferrite The size of nuclear core 12 is mated with adhesive tape element.

Inductor is inserted in the substrate that polyether-ether-ketone (PEEK) is constituted, and using the device that so obtains as extruding The lower pressure ram element of equipment uses, and it is also equipped with pressure ram element in addition.Extruding force is respectively displayed on table based on power F In 3, the Rotating fields being wherein pressed down against between rod element and upper pressure ram element is perpendicular to thermal activation can the side of bonding sheet structure Face provides this power F.Adhesive joints is respectively about 3mm with the spacing of induction apparatus.PTFE plate pad is correspondingly existed by polyester film Below.

By adjusted induction installation, the pulse width with 10% manufactures the frequency alternating magnetic field as 10kHz and is used for grinding Study carefully.Pulse width gives the whole Cycle Length (arteries and veins that pulse duration (pulse length) of alternating magnetic field accounts for alternating magnetic field Rush between persistent period and two adjacent pulses suspend persistent period sum) percentage ratio.

Thermal activation bonding sheet structure can stand the time (i.e. sensing the time of heating) of pulse alternating magnetic field 0.5 to 2s's In scope.Pressure continues to keep 30s, to solidify binding agent after the magnetic field was turned off.

Table 3 summary shows tests and result:

Test shows and can manufacture encapsulation in the process of the present invention, only by the Penetration Signature activating binding system used (especially for steam) determines its tightness.By this adhesive bonding method, the sample that macroscopically can not fully seal is general Demonstrate the life-span less than 1h on the contrary.

Ti20 type infrared camera by Fluke company determines the temperature occurred in chip architecture corresponding to experiment 6. To this, dismantle in aforementioned layers combines, and within the sensitive time, be not turned off extrusion equipment, thus heat activated adhesive The side of sheet is visible for camera.Sensitive time is variable.The results are shown in Table 4:

Determined by temperature be also representational for other embodiments bond because for the sensor in magnetic field It is identical on material and size respectively.

The enforcement of control methods and result:

In order to compare, the conventional hot press by M ü hlbauer company implements heating.Use the top being made up of aluminum (in the face of covering) hot-pressing tool, it has the shape of the adhesive surface for CAL.Use possess the aluminium sheet of room temperature as under Side's instrument.Introduce setting pressure (relative to adhesive surface) with top compression tool, and introduce heat by conduction of heat.Sample It was mechanically fixed on lower tool before hot pressing.By heated work above of short duration unlatching after hot pressing time has been carried out Tool, the aluminium sheet that will be present in room temperature adds therebetween, and afterwards pressure is continued to 30s, is used for solidifying binding agent.

By using the bonding sheet structure of thermal activation, corresponding to the thickness (25 μm) for ultrasonic bonds.

Table 4 summary shows tests and result:

Contrast test demonstrates, only when activation temperature is below the temperature of 170 DEG C, is i.e. polymerized by hot padding apparent damage At a temperature of thing film, on a polymeric substrate or encapsulation can be formed with polymeric cover with the method for prior art. In this case, in order to form bonding, the time more longer than the inventive method is needed.The inventive method connects in bonding It is also subject to of short duration, because being basically limited to the overheated of activatable adhesive compared with the weakness reason time and (that is exceeding within seam Exceeding for substrate can the heat of bearing temperature), but PET film be there is no (embodiment 26) of obvious damage.

Claims (23)

1. the method that encapsulating electronic device stops penetrant, wherein

There is provided and include at least one hot activable contact adhesive or chip architecture of hotmelt, and

This chip architecture of Zoned application that need to encapsulate at least about electronic installation in the substrate assemble/include this electronic installation,

For described electronic installation with at least surround its binding agent and arrange covering, wherein binding agent contacts with covering, And

The most at least this binding agent of thermal activation on the subregion of adhesive surface, thus formed and at least there is substrate and cover The complex of cover material,

Wherein, activation institute calorific requirement is by substantially self producing in the chip architecture at least including binding agent.

2. the method that encapsulating electronic device stops penetrant, wherein

There is provided and include at least one hot activable contact adhesive or chip architecture of hotmelt, and

At least enclose on the covering of encapsulating electronic device in the substrate assemble/include this electronic installation or being provided with This chip architecture of Zoned application that need to encapsulate around electronic installation,

Arranging covering for this electronic installation, this covering at least surrounds this binding agent, wherein binding agent at least with covering Contact, and

The most at least this binding agent of thermal activation on the subregion of adhesive surface, thus formed and at least there is substrate and cover The complex of cover material,

Wherein, activation institute calorific requirement is by substantially self producing in the chip architecture at least including binding agent.

Method the most according to claim 1 and 2, it is characterised in that described heat is in the chip architecture including at least binding agent In produced by ultrasound wave.

4. according to the method for claim 1 or 2, it is characterised in that described heat is logical in including at least the chip architecture of binding agent Cross magnetic induction to produce.

Method the most according to claim 4, it is characterised in that induction apparatus is integrated at least one compression tool.

Method the most according to claim 1 and 2, it is characterised in that realize sensing heating in the case of using magnetic field, its Frequency is positioned in the intermediate frequency range of 100Hz to 200kHz, and/or uses be used for sensing heating the heat time heating time of 0.1 to 10s.

Method the most according to claim 1 and 2, it is characterised in that described activatable adhesive is activable pressure-sensitive viscous Mixture.

Method the most according to claim 1 and 2, it is characterised in that exist in chip architecture by the oxygen of Silica-coated Change ferrum granule.

Method the most according to claim 8, it is characterised in that exist by Silica-coated in the binding agent of chip architecture Ferric oxide particles.

Method the most according to claim 1 and 2, it is characterised in that base material and/or covering are provided with for oxygen The antiseepage shielding of gas and steam, wherein, described antiseepage shielding has less than 10^-1g/(m²D) WVTR and/or less than 10^{- 1}cm³/(m²D bar) the value of OTR.

11. methods according to claim 10, it is characterised in that described antiseepage shielding has less than 10^-2g/(m²D) WVTR and/or less than 10^-2cm³/(m²D bar) OTR.

12. methods according to claim 1 and 2, it is characterised in that described base material and/or described covering are can There is in seeing optical range the transmitance of at least 75%.

13. methods according to claim 12, it is characterised in that described base material and/or described covering are visible There is in optical range the transmitance higher than 85%.

14. methods according to claim 1 and 2, it is characterised in that described activable binding agent has more than 0.1 Mechanical loss coefficient tan δ.

15. methods according to claim 14, it is characterised in that described activable binding agent has the machinery more than 1 Loss factor tan δ.

16. methods according to claim 14, it is characterised in that tan δ_{Binding agent}-tanδ_{Substrate or covering}Difference be at least 1.

17. methods according to claim 1 and 2, it is characterised in that described activable binding agent has at 23 DEG C and is more than The electric conductivity of 20MS/m.

18. methods according to claim 1 and 2, it is characterised in that described activatable adhesive has less than 100g/m²d WVTR and/or less than 8000cm³/(m²D bar) OTR.

19. methods according to claim 18, it is characterised in that described activatable adhesive has less than 10g/m²D's WVTR。

20. methods according to claim 18, it is characterised in that described activatable adhesive has less than 3000cm³/ (m²D bar) OTR.

21. methods according to claim 20, it is characterised in that described activatable adhesive has less than 100cm³/(m²d Bar) OTR.

22. methods according to claim 1 and 2, it is characterised in that described activatable adhesive is equipped with for penetrant Capture material.

23. methods according to claim 1 and 2, it is characterised in that the described chip architecture for sensing heating has at least The adhesive phase of three layers, i.e. at least one conductive layer and at least one heat activated adhesive and another adhesive phase.