CN103262653A - 器件的制造方法及有机el器件 - Google Patents
器件的制造方法及有机el器件 Download PDFInfo
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- CN103262653A CN103262653A CN2011800074705A CN201180007470A CN103262653A CN 103262653 A CN103262653 A CN 103262653A CN 2011800074705 A CN2011800074705 A CN 2011800074705A CN 201180007470 A CN201180007470 A CN 201180007470A CN 103262653 A CN103262653 A CN 103262653A
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/007026 WO2013088479A1 (ja) | 2011-12-15 | 2011-12-15 | デバイスの製造方法、および有機elデバイス |
Publications (2)
Publication Number | Publication Date |
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CN103262653A true CN103262653A (zh) | 2013-08-21 |
CN103262653B CN103262653B (zh) | 2017-06-16 |
Family
ID=48609226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201180007470.5A Active CN103262653B (zh) | 2011-12-15 | 2011-12-15 | 器件的制造方法及有机el器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8883530B2 (zh) |
JP (1) | JP5794994B2 (zh) |
CN (1) | CN103262653B (zh) |
WO (1) | WO2013088479A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5879575B2 (ja) | 2011-09-02 | 2016-03-08 | 株式会社Joled | 表示パネルの製造方法 |
JP5369240B2 (ja) * | 2012-02-28 | 2013-12-18 | 日東電工株式会社 | 有機el素子の製造方法及び有機el素子 |
US9123690B1 (en) * | 2012-10-18 | 2015-09-01 | University Of South Florida | Systems and methods for forming contact definitions |
WO2019123655A1 (ja) * | 2017-12-22 | 2019-06-27 | シャープ株式会社 | 表示デバイスの製造方法、および表示デバイスの製造装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6356320B1 (en) * | 1999-11-03 | 2002-03-12 | Lg. Philips Lcd Co., Ltd. | LCD with TFT array having wave-shaped resistance pattern to correct stitching defect |
US20040229410A1 (en) * | 2003-01-27 | 2004-11-18 | Fujitsu Display Technologies Corporation | Pattern forming method, method of manufacturing thin film transistor substrate, method of manufacturing liquid crystal display and exposure mask |
JP2006351263A (ja) * | 2005-06-14 | 2006-12-28 | Matsushita Electric Ind Co Ltd | プラズマディスプレイパネルおよびその製造方法 |
CN1983586A (zh) * | 2005-10-18 | 2007-06-20 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
JP4604752B2 (ja) * | 2005-02-14 | 2011-01-05 | パナソニック株式会社 | フラットディスプレイパネルの製造に用いるフォトマスクおよびフラットディスプレイパネルの製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5443922A (en) | 1991-11-07 | 1995-08-22 | Konica Corporation | Organic thin film electroluminescence element |
JPH05163488A (ja) | 1991-12-17 | 1993-06-29 | Konica Corp | 有機薄膜エレクトロルミネッセンス素子 |
JPH11305202A (ja) * | 1998-04-17 | 1999-11-05 | Asahi Optical Co Ltd | 液晶パネル保持機構 |
JP2005203345A (ja) | 2003-12-18 | 2005-07-28 | Tohoku Pioneer Corp | 有機elパネル用基板、有機elパネル及びその製造方法 |
JP2006040589A (ja) | 2004-07-22 | 2006-02-09 | Asahi Glass Co Ltd | 積層体、有機el表示素子、及び、有機el表示素子の製造方法 |
JP4857562B2 (ja) * | 2005-01-17 | 2012-01-18 | パナソニック株式会社 | フラットディスプレイパネル |
GB2454867B (en) * | 2007-11-09 | 2010-02-03 | Cambridge Display Tech Ltd | Electroluminescent devices comprising bus bar |
-
2011
- 2011-12-15 JP JP2012533820A patent/JP5794994B2/ja active Active
- 2011-12-15 CN CN201180007470.5A patent/CN103262653B/zh active Active
- 2011-12-15 WO PCT/JP2011/007026 patent/WO2013088479A1/ja active Application Filing
-
2012
- 2012-06-07 US US13/491,020 patent/US8883530B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6356320B1 (en) * | 1999-11-03 | 2002-03-12 | Lg. Philips Lcd Co., Ltd. | LCD with TFT array having wave-shaped resistance pattern to correct stitching defect |
US20040229410A1 (en) * | 2003-01-27 | 2004-11-18 | Fujitsu Display Technologies Corporation | Pattern forming method, method of manufacturing thin film transistor substrate, method of manufacturing liquid crystal display and exposure mask |
JP4604752B2 (ja) * | 2005-02-14 | 2011-01-05 | パナソニック株式会社 | フラットディスプレイパネルの製造に用いるフォトマスクおよびフラットディスプレイパネルの製造方法 |
JP2006351263A (ja) * | 2005-06-14 | 2006-12-28 | Matsushita Electric Ind Co Ltd | プラズマディスプレイパネルおよびその製造方法 |
CN1983586A (zh) * | 2005-10-18 | 2007-06-20 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2013088479A1 (ja) | 2013-06-20 |
CN103262653B (zh) | 2017-06-16 |
JP5794994B2 (ja) | 2015-10-14 |
US20130153936A1 (en) | 2013-06-20 |
US8883530B2 (en) | 2014-11-11 |
JPWO2013088479A1 (ja) | 2015-04-27 |
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Free format text: CORRECT: APPLICANT; FROM: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. TO: JANPAN ORGANIC RATE DISPLAY CO., LTD. Free format text: CORRECT: ADDRESS; FROM: |
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Effective date of registration: 20231207 Address after: Tokyo, Japan Patentee after: Japan Display Design and Development Contract Society Address before: Tokyo, Japan Patentee before: JOLED Inc. |