CN103254346B - 光敏共聚物，包含所述共聚物的光致抗蚀剂以及由其形成的制品 - Google Patents

光敏共聚物，包含所述共聚物的光致抗蚀剂以及由其形成的制品 Download PDF

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Publication number
CN103254346B
CN103254346B CN201310048009.5A CN201310048009A CN103254346B CN 103254346 B CN103254346 B CN 103254346B CN 201310048009 A CN201310048009 A CN 201310048009A CN 103254346 B CN103254346 B CN 103254346B
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group
copolymer
formula
alkyl
monomer
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CN103254346A (zh
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O·昂格伊
J·W·撒克里
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
CN201310048009.5A 2012-02-15 2013-02-06 光敏共聚物，包含所述共聚物的光致抗蚀剂以及由其形成的制品 Active CN103254346B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261599421P 2012-02-15 2012-02-15
US61/599,421 2012-02-15

Publications (2)

Publication Number Publication Date
CN103254346A CN103254346A (zh) 2013-08-21
CN103254346B true CN103254346B (zh) 2016-08-03

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Country Status (5)

Country Link
US (1) US9182662B2 (enExample)
JP (3) JP2013166931A (enExample)
KR (1) KR101515453B1 (enExample)
CN (1) CN103254346B (enExample)
TW (1) TWI567095B (enExample)

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US9182662B2 (en) * 2012-02-15 2015-11-10 Rohm And Haas Electronic Materials Llc Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom
JP6297269B2 (ja) * 2012-06-28 2018-03-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品
US9229319B2 (en) * 2013-12-19 2016-01-05 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
US9182669B2 (en) * 2013-12-19 2015-11-10 Rohm And Haas Electronic Materials Llc Copolymer with acid-labile group, photoresist composition, coated substrate, and method of forming an electronic device
KR20150079487A (ko) * 2013-12-31 2015-07-08 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토리소그래피 방법
JP2015197509A (ja) * 2014-03-31 2015-11-09 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物の製造方法及び感活性光線性又は感放射線性樹脂組成物
KR102325949B1 (ko) * 2014-11-27 2021-11-12 삼성전자주식회사 포토레지스트용 고분자, 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법
JP6782569B2 (ja) * 2016-06-28 2020-11-11 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP6735171B2 (ja) * 2016-07-22 2020-08-05 東京応化工業株式会社 高分子化合物の製造方法
JP6789024B2 (ja) * 2016-07-22 2020-11-25 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法、並びに、高分子化合物
US11720022B2 (en) 2019-02-12 2023-08-08 Samsung Electronics Co., Ltd. Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same
JP2024031844A (ja) * 2022-08-23 2024-03-07 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR20240043584A (ko) * 2022-09-27 2024-04-03 에스케이하이닉스 주식회사 반도체 소자 제조 방법

Citations (4)

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US6313245B1 (en) * 1997-06-10 2001-11-06 3M Innovative Properties Company Halogenated acrylates and polymers derived therefrom
JP2002249520A (ja) * 2001-02-23 2002-09-06 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
US7569326B2 (en) * 2006-10-27 2009-08-04 Shin-Etsu Chemical Co., Ltd. Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process
WO2012002519A1 (en) * 2010-06-28 2012-01-05 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film

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KR100707767B1 (ko) * 1999-09-28 2007-04-17 후지필름 가부시키가이샤 포지티브 포토레지스트 조성물
JP3897088B2 (ja) * 2000-12-18 2007-03-22 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
US6683202B2 (en) 2001-02-22 2004-01-27 Tokyo Ohka, Kogyo Co., Ltd. Fluorine-containing monomeric ester compound for base resin in photoresist composition
KR100863984B1 (ko) * 2001-07-03 2008-10-16 후지필름 가부시키가이샤 포지티브 레지스트 조성물
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JP5851688B2 (ja) 2009-12-31 2016-02-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 感光性組成物
JP5216032B2 (ja) 2010-02-02 2013-06-19 信越化学工業株式会社 新規スルホニウム塩、高分子化合物、高分子化合物の製造方法、レジスト材料及びパターン形成方法
JP5598351B2 (ja) 2010-02-16 2014-10-01 信越化学工業株式会社 電子線用又はｅｕｖ用化学増幅ポジ型レジスト組成物及びパターン形成方法
JP5505371B2 (ja) 2010-06-01 2014-05-28 信越化学工業株式会社 高分子化合物、化学増幅ポジ型レジスト材料、及びパターン形成方法
JP5655754B2 (ja) * 2011-10-03 2015-01-21 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
US9182662B2 (en) * 2012-02-15 2015-11-10 Rohm And Haas Electronic Materials Llc Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313245B1 (en) * 1997-06-10 2001-11-06 3M Innovative Properties Company Halogenated acrylates and polymers derived therefrom
JP2002249520A (ja) * 2001-02-23 2002-09-06 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
US7569326B2 (en) * 2006-10-27 2009-08-04 Shin-Etsu Chemical Co., Ltd. Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process
WO2012002519A1 (en) * 2010-06-28 2012-01-05 Fujifilm Corporation Pattern forming method, chemical amplification resist composition and resist film

Also Published As

Publication number Publication date
CN103254346A (zh) 2013-08-21
JP2017039937A (ja) 2017-02-23
JP6373921B2 (ja) 2018-08-15
TWI567095B (zh) 2017-01-21
KR101515453B1 (ko) 2015-04-29
KR20130094247A (ko) 2013-08-23
US9182662B2 (en) 2015-11-10
US20130209934A1 (en) 2013-08-15
JP2018135529A (ja) 2018-08-30
TW201339184A (zh) 2013-10-01
JP2013166931A (ja) 2013-08-29

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