CN103222040B - 粘接剂组合物、半导体装置的制造方法以及半导体装置 - Google Patents

粘接剂组合物、半导体装置的制造方法以及半导体装置 Download PDF

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CN103222040B
CN103222040B CN201180047053.3A CN201180047053A CN103222040B CN 103222040 B CN103222040 B CN 103222040B CN 201180047053 A CN201180047053 A CN 201180047053A CN 103222040 B CN103222040 B CN 103222040B
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curing agent
system curing
adhesive composite
semiconductor device
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CN103222040A (zh
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本田一尊
永井朗
榎本哲也
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Lishennoco Co ltd
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Hitachi Chemical Co Ltd
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Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101455951B1 (ko) * 2010-09-30 2014-10-28 히타치가세이가부시끼가이샤 접착제 조성물, 반도체 장치의 제조 방법 및 반도체 장치
JP2013221122A (ja) * 2012-04-18 2013-10-28 Mitsubishi Chemicals Corp 三次元積層型半導体装置用の層間充填剤組成物およびその塗布液
JP2013221121A (ja) * 2012-04-18 2013-10-28 Mitsubishi Chemicals Corp 三次元積層型半導体装置用の層間充填剤組成物塗布液
WO2013161864A1 (ja) * 2012-04-26 2013-10-31 新日鉄住金化学株式会社 フィルム状接着剤用組成物及びその製造方法、フィルム状接着剤、並びに、フィルム状接着剤を用いた半導体パッケージ及びその製造方法
JP6065495B2 (ja) * 2012-09-25 2017-01-25 東レ株式会社 電子部品およびパワー半導体装置
TWI554530B (zh) * 2012-10-08 2016-10-21 國立臺灣大學 聚合物以及透過該聚合物製備之膠態電解質及其製備方法
KR20160019474A (ko) 2013-06-13 2016-02-19 도레이 카부시키가이샤 수지 조성물, 수지 시트 및 반도체 장치의 제조 방법
JP6368990B2 (ja) * 2013-06-26 2018-08-08 日本ゼオン株式会社 光学用粘着性組成物の粒子混合物、光学用粘着性組成物、及び、光学用粘着層の製造方法
JP2015030745A (ja) * 2013-07-31 2015-02-16 住友ベークライト株式会社 樹脂組成物、半導体装置、多層回路基板および電子部品
JP2015129247A (ja) * 2014-01-09 2015-07-16 住友ベークライト株式会社 樹脂組成物、接着フィルム、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、ダイシングテープ兼バックグラインドテープ一体型接着シート、および、電子装置
CN106470794A (zh) * 2014-06-19 2017-03-01 阿尔法金属公司 工程残余物焊料膏工艺
WO2016088859A1 (ja) * 2014-12-05 2016-06-09 日立化成株式会社 半導体用接着剤、並びに、半導体装置及びその製造方法
CN105081614B (zh) * 2015-09-07 2017-08-04 东莞市富默克化工有限公司 一种osp预浸剂
CN109075088B (zh) * 2016-05-09 2022-01-07 昭和电工材料株式会社 半导体装置的制造方法
KR102538175B1 (ko) 2016-06-20 2023-06-01 삼성전자주식회사 반도체 패키지
JP2017038081A (ja) * 2016-10-27 2017-02-16 住友ベークライト株式会社 半導体装置
WO2018105125A1 (ja) * 2016-12-09 2018-06-14 日立化成株式会社 組成物、接着剤、焼結体、接合体及び接合体の製造方法
KR102290957B1 (ko) * 2017-03-31 2021-08-20 주식회사 엘지에너지솔루션 이차전지용 바인더 조성물, 이를 포함하는 이차전지용 전극 및 리튬 이차전지
JP7196841B2 (ja) * 2017-06-21 2022-12-27 昭和電工マテリアルズ株式会社 半導体用接着剤、半導体装置の製造方法及び半導体装置
WO2019102719A1 (ja) * 2017-11-27 2019-05-31 ナミックス株式会社 フィルム状半導体封止材
TW202033708A (zh) * 2018-10-02 2020-09-16 日商日立化成股份有限公司 半導體用接著劑、半導體裝置的製造方法及半導體裝置
WO2022120715A1 (zh) * 2020-12-10 2022-06-16 深圳先进技术研究院 一种绝缘胶膜材料及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101356643A (zh) * 2006-09-13 2009-01-28 住友电木株式会社 半导体器件
CN101794638A (zh) * 2006-07-21 2010-08-04 日立化成工业株式会社 电路连接材料、电路部件的连接结构及电路部件的连接方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4197141B2 (ja) * 2003-08-22 2008-12-17 電気化学工業株式会社 球状アルミナ粉末及びその用途
JP2005325210A (ja) * 2004-05-13 2005-11-24 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
JP2006193666A (ja) * 2005-01-14 2006-07-27 Sumitomo Bakelite Co Ltd 半導体用接着フィルム、半導体用接着フィルム付きキャリア材料および半導体装置
JP2008085264A (ja) * 2006-09-29 2008-04-10 Sumitomo Bakelite Co Ltd 半導体装置
JP2008174624A (ja) * 2007-01-17 2008-07-31 Admatechs Co Ltd 表面処理無機粉体
JP5309886B2 (ja) * 2007-10-22 2013-10-09 日立化成株式会社 半導体封止用フィルム状接着剤、半導体装置の製造方法及び半導体装置
KR101455951B1 (ko) * 2010-09-30 2014-10-28 히타치가세이가부시끼가이샤 접착제 조성물, 반도체 장치의 제조 방법 및 반도체 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101794638A (zh) * 2006-07-21 2010-08-04 日立化成工业株式会社 电路连接材料、电路部件的连接结构及电路部件的连接方法
CN101356643A (zh) * 2006-09-13 2009-01-28 住友电木株式会社 半导体器件

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