CN1032106C - 电荷传输装置及其驱动方法及固态图像摄像装置 - Google Patents

电荷传输装置及其驱动方法及固态图像摄像装置 Download PDF

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Publication number
CN1032106C
CN1032106C CN93100857A CN93100857A CN1032106C CN 1032106 C CN1032106 C CN 1032106C CN 93100857 A CN93100857 A CN 93100857A CN 93100857 A CN93100857 A CN 93100857A CN 1032106 C CN1032106 C CN 1032106C
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CN
China
Prior art keywords
transfer
charge
electrode
given
transmission
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Expired - Fee Related
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CN93100857A
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English (en)
Chinese (zh)
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CN1079351A (zh
Inventor
物井诚
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Toshiba Corp
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Toshiba Corp
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Publication of CN1079351A publication Critical patent/CN1079351A/zh
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Publication of CN1032106C publication Critical patent/CN1032106C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/152—One-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1536—Frame transfer

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN93100857A 1992-01-31 1993-01-30 电荷传输装置及其驱动方法及固态图像摄像装置 Expired - Fee Related CN1032106C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4619792 1992-01-31
JP046197/92 1992-01-31

Publications (2)

Publication Number Publication Date
CN1079351A CN1079351A (zh) 1993-12-08
CN1032106C true CN1032106C (zh) 1996-06-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN93100857A Expired - Fee Related CN1032106C (zh) 1992-01-31 1993-01-30 电荷传输装置及其驱动方法及固态图像摄像装置

Country Status (7)

Country Link
US (1) US5459509A (enExample)
EP (1) EP0553869B1 (enExample)
JP (1) JP2983401B2 (enExample)
KR (1) KR970002122B1 (enExample)
CN (1) CN1032106C (enExample)
DE (1) DE69320839T2 (enExample)
TW (1) TW224519B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3155877B2 (ja) * 1993-12-15 2001-04-16 株式会社東芝 固体撮像装置及びその電荷転送方法
KR0182282B1 (ko) * 1994-09-29 1999-03-20 사또오 후미오 고체 촬상 장치의 구동 방식
JP3511772B2 (ja) * 1995-12-21 2004-03-29 ソニー株式会社 固体撮像素子、固体撮像素子の駆動方法、カメラ装置及びカメラシステム
US6570615B1 (en) * 1998-07-14 2003-05-27 Analog Devices, Inc. Pixel readout scheme for image sensors
US6512546B1 (en) 1998-07-17 2003-01-28 Analog Devices, Inc. Image sensor using multiple array readout lines
US6754402B2 (en) * 2000-02-09 2004-06-22 Fuji Photo Film Co., Ltd. Interpolation arithmetic method and image reader
JP2007036861A (ja) * 2005-07-28 2007-02-08 Sanyo Electric Co Ltd 固体撮像素子の駆動装置及び駆動方法
US8576319B2 (en) * 2009-12-25 2013-11-05 Japan Atomic Energy Agency Image sensor, semiconductor device and image sensing method
US8383443B2 (en) 2010-05-14 2013-02-26 International Business Machines Corporation Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing
US9749565B2 (en) * 2015-05-18 2017-08-29 Analog Devices, Inc. Interline charge-coupled devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104076A (ja) * 1985-10-30 1987-05-14 Nec Corp 電荷結合素子駆動方法
JPH01502310A (ja) * 1987-02-17 1989-08-10 イーストマン・コダック・カンパニー 電荷転送非効率性の効果の低減
US4807037A (en) * 1987-03-06 1989-02-21 Kabushiki Kaisha Toshiba Low noise CCD image sensor having a plurality of horizontal CCD registers
US4897728A (en) * 1987-10-09 1990-01-30 Kabushiki Kaisha Toshiba Charge transfer device for solid state image pickup apparatus and method of driving the same
JPH01170281A (ja) * 1987-12-25 1989-07-05 Fuji Photo Film Co Ltd 固体電子撮像装置
JP2735223B2 (ja) * 1988-06-08 1998-04-02 日本放送協会 固体撮像装置
US5040071A (en) * 1990-03-21 1991-08-13 Eastman Kodak Company Image sensor having multiple horizontal shift registers

Also Published As

Publication number Publication date
KR930017196A (ko) 1993-08-30
EP0553869B1 (en) 1998-09-09
JPH05276448A (ja) 1993-10-22
DE69320839T2 (de) 1999-03-04
KR970002122B1 (ko) 1997-02-22
CN1079351A (zh) 1993-12-08
TW224519B (enExample) 1994-06-01
DE69320839D1 (de) 1998-10-15
JP2983401B2 (ja) 1999-11-29
EP0553869A3 (enExample) 1994-02-16
EP0553869A2 (en) 1993-08-04
US5459509A (en) 1995-10-17

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