CN103190042A - Iii族氮化物半导体元件、制造iii族氮化物半导体元件的方法及外延基板 - Google Patents

Iii族氮化物半导体元件、制造iii族氮化物半导体元件的方法及外延基板 Download PDF

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CN103190042A
CN103190042A CN2011800534287A CN201180053428A CN103190042A CN 103190042 A CN103190042 A CN 103190042A CN 2011800534287 A CN2011800534287 A CN 2011800534287A CN 201180053428 A CN201180053428 A CN 201180053428A CN 103190042 A CN103190042 A CN 103190042A
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group iii
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based semiconductor
layer
iii nitride
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盐谷阳平
京野孝史
住友隆道
善积祐介
西塚幸司
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
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    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/3438—Doping during depositing
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
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    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
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  • Condensed Matter Physics & Semiconductors (AREA)
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CN2011800534287A 2010-11-05 2011-10-28 Iii族氮化物半导体元件、制造iii族氮化物半导体元件的方法及外延基板 Pending CN103190042A (zh)

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JP2010248932A JP5842324B2 (ja) 2010-11-05 2010-11-05 Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子を作製する方法、及びエピタキシャル基板
JP2010-248932 2010-11-05
PCT/JP2011/074973 WO2012060299A1 (ja) 2010-11-05 2011-10-28 Iii族窒化物半導体素子、iii族窒化物半導体素子を作製する方法、及びエピタキシャル基板

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US (1) US8809868B2 (cg-RX-API-DMAC10.html)
EP (1) EP2637267A1 (cg-RX-API-DMAC10.html)
JP (1) JP5842324B2 (cg-RX-API-DMAC10.html)
CN (1) CN103190042A (cg-RX-API-DMAC10.html)
TW (1) TW201234415A (cg-RX-API-DMAC10.html)
WO (1) WO2012060299A1 (cg-RX-API-DMAC10.html)

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CN104851949A (zh) * 2014-02-19 2015-08-19 丰田合成株式会社 用于制造第iii族氮化物半导体发光器件的方法
CN110838514A (zh) * 2018-08-17 2020-02-25 苏州能讯高能半导体有限公司 一种半导体器件的外延结构及其制备方法、半导体器件
CN111052414A (zh) * 2017-08-24 2020-04-21 日本碍子株式会社 13族元素氮化物层、自立基板以及功能元件

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JP2820770B2 (ja) 1990-04-19 1998-11-05 株式会社ブリヂストン 干渉型防音装置
JP5387302B2 (ja) * 2009-09-30 2014-01-15 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
KR101659738B1 (ko) * 2010-07-08 2016-09-26 엘지이노텍 주식회사 발광 소자 제조방법
JP5361925B2 (ja) * 2011-03-08 2013-12-04 株式会社東芝 半導体発光素子およびその製造方法
TWI577046B (zh) * 2014-12-23 2017-04-01 錼創科技股份有限公司 半導體發光元件及其製作方法
US10665750B2 (en) 2017-11-22 2020-05-26 Epistar Corporation Semiconductor device
WO2020121794A1 (ja) * 2018-12-11 2020-06-18 パナソニックセミコンダクターソリューションズ株式会社 窒化物系半導体発光素子及びその製造方法、並びに、窒化物系半導体結晶の製造方法
JP7422496B2 (ja) * 2019-06-21 2024-01-26 古河機械金属株式会社 構造体、光デバイス、光デバイスの製造方法、構造体の製造方法
US11527701B2 (en) * 2019-10-28 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric device and method of forming the same
JP7269190B2 (ja) * 2020-02-27 2023-05-08 株式会社東芝 窒化物結晶、光学装置、半導体装置、窒化物結晶の製造方法
WO2022068256A1 (zh) * 2020-09-30 2022-04-07 苏州能讯高能半导体有限公司 半导体器件的外延结构及其制备方法

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CN101689586A (zh) * 2007-06-15 2010-03-31 罗姆股份有限公司 氮化物半导体发光元件和氮化物半导体的制造方法
JP2010192865A (ja) * 2009-01-23 2010-09-02 Sumitomo Electric Ind Ltd 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法
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JP2010212651A (ja) * 2009-09-08 2010-09-24 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104851949A (zh) * 2014-02-19 2015-08-19 丰田合成株式会社 用于制造第iii族氮化物半导体发光器件的方法
CN104851949B (zh) * 2014-02-19 2017-09-19 丰田合成株式会社 用于制造第iii族氮化物半导体发光器件的方法
CN111052414A (zh) * 2017-08-24 2020-04-21 日本碍子株式会社 13族元素氮化物层、自立基板以及功能元件
CN111052414B (zh) * 2017-08-24 2023-07-21 日本碍子株式会社 13族元素氮化物层、自立基板以及功能元件
CN110838514A (zh) * 2018-08-17 2020-02-25 苏州能讯高能半导体有限公司 一种半导体器件的外延结构及其制备方法、半导体器件
CN110838514B (zh) * 2018-08-17 2022-07-22 苏州能讯高能半导体有限公司 一种半导体器件的外延结构及其制备方法、半导体器件

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