CN103189998A - 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结 - Google Patents

用于多结太阳能电池的InP晶格常数的II型高带隙隧道结 Download PDF

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Publication number
CN103189998A
CN103189998A CN2011800501461A CN201180050146A CN103189998A CN 103189998 A CN103189998 A CN 103189998A CN 2011800501461 A CN2011800501461 A CN 2011800501461A CN 201180050146 A CN201180050146 A CN 201180050146A CN 103189998 A CN103189998 A CN 103189998A
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CN
China
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doped
layer
tunnel
inp
tunnel junction
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Pending
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CN2011800501461A
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English (en)
Chinese (zh)
Inventor
R·L·吴
D·C·罗
J·C·布瓦维尔
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Boeing Co
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Boeing Co
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Priority to CN201710803810.4A priority Critical patent/CN107863400A/zh
Publication of CN103189998A publication Critical patent/CN103189998A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
CN2011800501461A 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结 Pending CN103189998A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710803810.4A CN107863400A (zh) 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/950,912 US11417788B2 (en) 2010-11-19 2010-11-19 Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
US12/950,912 2010-11-19
PCT/US2011/052898 WO2012067715A2 (en) 2010-11-19 2011-09-23 TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710803810.4A Division CN107863400A (zh) 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结

Publications (1)

Publication Number Publication Date
CN103189998A true CN103189998A (zh) 2013-07-03

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CN2011800501461A Pending CN103189998A (zh) 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结
CN201710803810.4A Pending CN107863400A (zh) 2010-11-19 2011-09-23 用于多结太阳能电池的InP晶格常数的II型高带隙隧道结

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Country Status (7)

Country Link
US (1) US11417788B2 (https=)
EP (1) EP2641275B1 (https=)
JP (1) JP2013543278A (https=)
KR (1) KR101908742B1 (https=)
CN (2) CN103189998A (https=)
CA (1) CA2810895C (https=)
WO (1) WO2012067715A2 (https=)

Cited By (3)

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CN106549069A (zh) * 2015-09-21 2017-03-29 波音公司 用于半导体器件的锑化物‑基高带隙隧道结
TWI601298B (zh) * 2017-02-10 2017-10-01 友達光電股份有限公司 光伏裝置
CN109103293A (zh) * 2017-06-21 2018-12-28 阿聚尔斯佩西太阳能有限责任公司 太阳能电池堆叠

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US10283658B2 (en) * 2011-02-09 2019-05-07 The Board Of Regents Of The University Of Oklahoma Interband cascade devices
CN102751367A (zh) * 2012-07-10 2012-10-24 厦门市三安光电科技有限公司 三结太阳能电池及其制备方法
GB2504977B (en) * 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
CN102832274B (zh) * 2012-09-05 2015-01-07 天津三安光电有限公司 倒装太阳能电池及其制备方法
JP2015038952A (ja) * 2013-07-16 2015-02-26 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
WO2014142340A1 (en) * 2013-03-14 2014-09-18 Ricoh Company, Ltd. Compound semiconductor photovoltaic cell and manufacturing method of the same
JP6446782B2 (ja) * 2013-03-14 2019-01-09 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
JP6550691B2 (ja) * 2013-07-30 2019-07-31 株式会社リコー 化合物半導体太陽電池
JP6582591B2 (ja) 2014-07-11 2019-10-02 株式会社リコー 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法
JP2016122752A (ja) * 2014-12-25 2016-07-07 国立大学法人 東京大学 太陽電池
DE102015006379B4 (de) * 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Skalierbare Spannungsquelle
US10923610B2 (en) 2015-09-30 2021-02-16 Panasonic Intellectual Property Management Co., Ltd. Solar cell and solar cell module
US10784396B2 (en) * 2015-09-30 2020-09-22 Panasonic Intellectual Property Management Co., Ltd. Solar cell, solar cell module, and production method for solar cell
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare
KR101829743B1 (ko) 2017-08-29 2018-02-20 아이피랩 주식회사 밴드 갭 조정을 위한 비대칭 삼차원 격자 구조체
MD4554C1 (ro) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS
DE102020001185A1 (de) 2020-02-25 2021-08-26 Azur Space Solar Power Gmbh Stapelförmige monolithische aufrecht-metamorphe lll-V-Mehrfachsolarzelle
KR102496459B1 (ko) * 2020-05-07 2023-02-03 한양대학교 산학협력단 페로브스카이트/갈륨비소 탠덤형 태양 전지 및 이의 제조방법

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106549069A (zh) * 2015-09-21 2017-03-29 波音公司 用于半导体器件的锑化物‑基高带隙隧道结
CN106549069B (zh) * 2015-09-21 2021-08-17 波音公司 用于半导体器件的锑化物-基高带隙隧道结
TWI601298B (zh) * 2017-02-10 2017-10-01 友達光電股份有限公司 光伏裝置
CN109103293A (zh) * 2017-06-21 2018-12-28 阿聚尔斯佩西太阳能有限责任公司 太阳能电池堆叠
CN109103293B (zh) * 2017-06-21 2021-12-10 阿聚尔斯佩西太阳能有限责任公司 太阳能电池堆叠

Also Published As

Publication number Publication date
CN107863400A (zh) 2018-03-30
CA2810895A1 (en) 2012-05-24
US20120125392A1 (en) 2012-05-24
CA2810895C (en) 2018-10-16
WO2012067715A2 (en) 2012-05-24
WO2012067715A3 (en) 2012-12-06
JP2013543278A (ja) 2013-11-28
KR20140009119A (ko) 2014-01-22
EP2641275B1 (en) 2022-07-06
EP2641275A2 (en) 2013-09-25
KR101908742B1 (ko) 2018-10-16
US11417788B2 (en) 2022-08-16

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Application publication date: 20130703