CN103180969A - 薄膜太阳能电池的Kesterite层制造 - Google Patents

薄膜太阳能电池的Kesterite层制造 Download PDF

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Publication number
CN103180969A
CN103180969A CN2011800510920A CN201180051092A CN103180969A CN 103180969 A CN103180969 A CN 103180969A CN 2011800510920 A CN2011800510920 A CN 2011800510920A CN 201180051092 A CN201180051092 A CN 201180051092A CN 103180969 A CN103180969 A CN 103180969A
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substrate
tin
zinc
sulphur
copper
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CN2011800510920A
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Chinese (zh)
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王克嘉
G·苏普拉提克
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3236—Materials thereof being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN2011800510920A 2010-10-26 2011-10-19 薄膜太阳能电池的Kesterite层制造 Pending CN103180969A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/911,833 2010-10-26
US12/911,833 US8440497B2 (en) 2010-10-26 2010-10-26 Fabricating kesterite solar cells and parts thereof
PCT/EP2011/068254 WO2012055737A2 (en) 2010-10-26 2011-10-19 Kesterite layer fabrication for thin film solar cells

Publications (1)

Publication Number Publication Date
CN103180969A true CN103180969A (zh) 2013-06-26

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CN2011800510920A Pending CN103180969A (zh) 2010-10-26 2011-10-19 薄膜太阳能电池的Kesterite层制造

Country Status (5)

Country Link
US (1) US8440497B2 (https=)
JP (1) JP2014502039A (https=)
CN (1) CN103180969A (https=)
DE (1) DE112011102890T5 (https=)
WO (1) WO2012055737A2 (https=)

Cited By (5)

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CN105470113A (zh) * 2015-11-20 2016-04-06 中国电子科技集团公司第十八研究所 一种CZTSSe薄膜太阳电池吸收层的制备方法
CN105679878A (zh) * 2014-11-17 2016-06-15 中国电子科技集团公司第十八研究所 一种共蒸发制备铜锌锡硫硒薄膜太阳电池吸收层的方法
CN108323212A (zh) * 2016-02-18 2018-07-24 田永权 太阳能电池及其制备方法
CN110867383A (zh) * 2019-11-21 2020-03-06 中国电子科技集团公司第十八研究所 一种三步硫化工艺制备铜锌锡硫薄膜吸收层的方法
CN114864752A (zh) * 2022-06-15 2022-08-05 金陵科技学院 一种改善柔性CZTSSe薄膜太阳能电池吸收层残余应力的方法及应用

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US20120318361A1 (en) * 2011-06-20 2012-12-20 Alliance For Sustainable Energy, Llc Manufacturing thin films with chalcogen species with independent control over doping and bandgaps
US20130217211A1 (en) * 2012-02-21 2013-08-22 Aqt Solar, Inc. Controlled-Pressure Process for Production of CZTS Thin-Films
US8586457B1 (en) * 2012-05-17 2013-11-19 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
US9153729B2 (en) * 2012-11-26 2015-10-06 International Business Machines Corporation Atomic layer deposition for photovoltaic devices
US9349906B2 (en) 2014-09-27 2016-05-24 International Business Machines Corporation Anneal techniques for chalcogenide semiconductors
US9917216B2 (en) * 2014-11-04 2018-03-13 International Business Machines Corporation Flexible kesterite photovoltaic device on ceramic substrate
US10032949B2 (en) * 2015-11-09 2018-07-24 International Business Machines Corporation Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber
PL241410B1 (pl) * 2019-02-11 2022-09-26 Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie Sposób wytwarzania proszkowego kesterytu typu Cu<sub>₂</sub>SnZnS<sub>₄</sub>
PL241416B1 (pl) * 2019-02-11 2022-09-26 Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie Sposób wytwarzania proszkowego kesterytu typu Cu₂SnZnS₄, przeznaczonego do produkcji warstw czynnych w cienkowarstwowych ogniwach fotowoltaicznych

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CN101824638A (zh) * 2010-05-06 2010-09-08 深圳丹邦投资集团有限公司 一种电化学沉积铜锌锡硒半导体薄膜材料的方法

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US7518207B1 (en) * 2004-03-19 2009-04-14 The United States Of America As Represented By The Secretary Of The Navy Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films
JP2010245238A (ja) * 2009-04-03 2010-10-28 Promatic Kk 光電変換装置およびその製造方法ならびに硫化物焼結体ターゲットの製造方法
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CN101824638A (zh) * 2010-05-06 2010-09-08 深圳丹邦投资集团有限公司 一种电化学沉积铜锌锡硒半导体薄膜材料的方法

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KAZUO JIMBO, ET AL.: "Cu2ZnSnS4-type thin film solar cells using abundant materials", 《THIN SOLID FILMS》, vol. 515, no. 15, 22 January 2007 (2007-01-22), pages 5997 - 5999 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105679878A (zh) * 2014-11-17 2016-06-15 中国电子科技集团公司第十八研究所 一种共蒸发制备铜锌锡硫硒薄膜太阳电池吸收层的方法
CN105470113A (zh) * 2015-11-20 2016-04-06 中国电子科技集团公司第十八研究所 一种CZTSSe薄膜太阳电池吸收层的制备方法
CN105470113B (zh) * 2015-11-20 2018-07-10 中国电子科技集团公司第十八研究所 一种CZTSSe薄膜太阳电池吸收层的制备方法
CN108323212A (zh) * 2016-02-18 2018-07-24 田永权 太阳能电池及其制备方法
CN110867383A (zh) * 2019-11-21 2020-03-06 中国电子科技集团公司第十八研究所 一种三步硫化工艺制备铜锌锡硫薄膜吸收层的方法
CN110867383B (zh) * 2019-11-21 2023-05-30 中国电子科技集团公司第十八研究所 一种三步硫化工艺制备铜锌锡硫薄膜吸收层的方法
CN114864752A (zh) * 2022-06-15 2022-08-05 金陵科技学院 一种改善柔性CZTSSe薄膜太阳能电池吸收层残余应力的方法及应用

Also Published As

Publication number Publication date
DE112011102890T5 (de) 2013-06-06
US20120100664A1 (en) 2012-04-26
WO2012055737A3 (en) 2012-12-27
JP2014502039A (ja) 2014-01-23
US8440497B2 (en) 2013-05-14
WO2012055737A2 (en) 2012-05-03

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Application publication date: 20130626