JP4945420B2 - 光電物質及びその製造方法 - Google Patents
光電物質及びその製造方法 Download PDFInfo
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- JP4945420B2 JP4945420B2 JP2007315290A JP2007315290A JP4945420B2 JP 4945420 B2 JP4945420 B2 JP 4945420B2 JP 2007315290 A JP2007315290 A JP 2007315290A JP 2007315290 A JP2007315290 A JP 2007315290A JP 4945420 B2 JP4945420 B2 JP 4945420B2
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- photoelectric
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- photoelectric material
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- chemical formula
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Description
本発明の光電物質を製造するための製造装置の概念図を図1に表した。図1を参照すれば、真空チャンバ110内に基板ホルダ120が位置する。前記真空チャンバ内の圧力は、10-6torr以下に維持した。
120 基板ホルダ
130 ターゲット
140,210 基板
220 背面電極
230 光吸収層
240 バッファ層
250 ウインドー層
260 反射防止層
270 グリッド電極
Claims (6)
- 基板上にX2Y3の化学式を有する第1物質を蒸着する段階と、
前記第1物質上にAY’2の化学式を有する第2物質を蒸着する段階と、
前記第1物質と前記第2物質とを熱処理する段階と、
を含む結晶性光電物質の製造方法(ここで、Aは銅(Cu)であり、Xはヒ素(As)であり、Yは硫黄(S)であり、およびY’はセレン(Se)である)。 - 前記第1物質の化学式がAs2S3であることを特徴とする請求項1に記載の光電物質の製造方法。
- 前記第2物質の化学式がCuSe2であることを特徴とする請求項1に記載の光電物質の製造方法。
- 前記熱処理が200℃ないし300℃の温度で行われることを特徴とする請求項1に記載の光電物質の製造方法。
- 前記第1物質が非晶質であることを特徴とする請求項1に記載の光電物質の製造方法。
- 前記第2物質が結晶質であることを特徴とする請求項1に記載の光電物質の製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060122564 | 2006-12-05 | ||
KR10-2006-0122564 | 2006-12-05 | ||
KR1020070043803A KR100833517B1 (ko) | 2006-12-05 | 2007-05-04 | 광전 물질 및 그의 제조 방법 |
KR10-2007-0043803 | 2007-05-04 |
Publications (2)
Publication Number | Publication Date |
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JP2008147661A JP2008147661A (ja) | 2008-06-26 |
JP4945420B2 true JP4945420B2 (ja) | 2012-06-06 |
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ID=39607425
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Application Number | Title | Priority Date | Filing Date |
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JP2007315290A Expired - Fee Related JP4945420B2 (ja) | 2006-12-05 | 2007-12-05 | 光電物質及びその製造方法 |
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JP (1) | JP4945420B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150051164A (ko) * | 2013-10-31 | 2015-05-11 | 재단법인대구경북과학기술원 | 광흡수층 밴드갭 조절을 통한 czts 태양전지의 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5249716B1 (ja) * | 1971-07-08 | 1977-12-19 | ||
JPS5144528B2 (ja) * | 1972-10-02 | 1976-11-29 | ||
CA1269523A (en) * | 1984-07-23 | 1990-05-29 | Corning Glass Works | Photoelectrodes for solar energy conversion |
CA1265922A (en) * | 1984-07-27 | 1990-02-20 | Helmut Tributsch | Photoactive pyrite layer and process for making and using same |
US6281426B1 (en) * | 1997-10-01 | 2001-08-28 | Midwest Research Institute | Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge |
JP4394366B2 (ja) * | 2003-03-26 | 2010-01-06 | 時夫 中田 | 両面受光太陽電池 |
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2007
- 2007-12-05 JP JP2007315290A patent/JP4945420B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150051164A (ko) * | 2013-10-31 | 2015-05-11 | 재단법인대구경북과학기술원 | 광흡수층 밴드갭 조절을 통한 czts 태양전지의 제조 방법 |
KR101635955B1 (ko) * | 2013-10-31 | 2016-07-07 | 재단법인대구경북과학기술원 | 광흡수층 밴드갭 조절을 통한 czts 태양전지의 제조 방법 |
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