CN103180945B - 用于制造发光器件的层压支撑膜及其制造方法 - Google Patents
用于制造发光器件的层压支撑膜及其制造方法 Download PDFInfo
- Publication number
- CN103180945B CN103180945B CN201180052305.1A CN201180052305A CN103180945B CN 103180945 B CN103180945 B CN 103180945B CN 201180052305 A CN201180052305 A CN 201180052305A CN 103180945 B CN103180945 B CN 103180945B
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- optical element
- layer
- film
- luminescent device
- elements
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24851—Intermediate layer is discontinuous or differential
- Y10T428/2486—Intermediate layer is discontinuous or differential with outer strippable or release layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40718010P | 2010-10-27 | 2010-10-27 | |
| US61/407180 | 2010-10-27 | ||
| PCT/IB2011/054684 WO2012056378A1 (en) | 2010-10-27 | 2011-10-20 | Laminate support film for fabrication of light emitting devices and method its fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103180945A CN103180945A (zh) | 2013-06-26 |
| CN103180945B true CN103180945B (zh) | 2016-12-07 |
Family
ID=44993634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180052305.1A Active CN103180945B (zh) | 2010-10-27 | 2011-10-20 | 用于制造发光器件的层压支撑膜及其制造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9351348B2 (enExample) |
| EP (1) | EP2633554A1 (enExample) |
| JP (3) | JP2013541220A (enExample) |
| KR (1) | KR101909299B1 (enExample) |
| CN (1) | CN103180945B (enExample) |
| TW (1) | TWI560400B (enExample) |
| WO (1) | WO2012056378A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014075527A (ja) * | 2012-10-05 | 2014-04-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体素子構造およびその作製法 |
| US9299687B2 (en) * | 2012-10-05 | 2016-03-29 | Bridgelux, Inc. | Light-emitting assemblies comprising an array of light-emitting diodes having an optimized lens configuration |
| DE102012109806A1 (de) | 2012-10-15 | 2014-04-17 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
| JP6713720B2 (ja) * | 2013-08-30 | 2020-06-24 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ及びそれを含む車両用照明装置 |
| US20160131328A1 (en) * | 2014-11-07 | 2016-05-12 | Lighthouse Technologies Limited | Indoor smd led equipped for outdoor usage |
| CN106449951B (zh) * | 2016-11-16 | 2019-01-04 | 厦门市三安光电科技有限公司 | 一种发光二极管封装结构的制作方法 |
| CN110800118B (zh) * | 2017-06-29 | 2022-10-28 | 京瓷株式会社 | 电路基板以及具备该电路基板的发光装置 |
| US11022791B2 (en) | 2018-05-18 | 2021-06-01 | Facebook Technologies, Llc | Assemblies of anisotropic optical elements and methods of making |
| EP3794647B1 (en) * | 2018-05-18 | 2023-11-08 | Rohm and Haas Electronic Materials LLC | Method for producing light emitting diodes (leds) by one step film lamination |
| US11527684B2 (en) * | 2020-12-04 | 2022-12-13 | Lumileds Llc | Patterned downconverter and adhesive film for micro-LED, mini-LED downconverter mass transfer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4007396A (en) * | 1974-11-06 | 1977-02-08 | The Marconi Company Limited | Light emissive diode displays |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4496774B2 (ja) * | 2003-12-22 | 2010-07-07 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
| US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
| US7553683B2 (en) | 2004-06-09 | 2009-06-30 | Philips Lumiled Lighting Co., Llc | Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices |
| US7352011B2 (en) * | 2004-11-15 | 2008-04-01 | Philips Lumileds Lighting Company, Llc | Wide emitting lens for LED useful for backlighting |
| JP4615981B2 (ja) * | 2004-12-08 | 2011-01-19 | スタンレー電気株式会社 | 発光ダイオード及びその製造方法 |
| TWI389337B (zh) * | 2005-05-12 | 2013-03-11 | 松下電器產業股份有限公司 | 發光裝置與使用其之顯示裝置及照明裝置,以及發光裝置之製造方法 |
| JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
| US7344952B2 (en) | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
| JP2007150233A (ja) * | 2005-11-02 | 2007-06-14 | Trion:Kk | 色温度可変発光デバイス |
| KR20090018032A (ko) | 2006-04-25 | 2009-02-19 | 아사히 가라스 가부시키가이샤 | 반도체 수지 몰드용 이형 필름 |
| US8141384B2 (en) * | 2006-05-03 | 2012-03-27 | 3M Innovative Properties Company | Methods of making LED extractor arrays |
| DE102006024165A1 (de) * | 2006-05-23 | 2007-11-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
| KR20090016694A (ko) * | 2006-06-12 | 2009-02-17 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 재발광 반도체 구성 및 광학 요소를 갖는 led 소자 |
| US9061450B2 (en) * | 2007-02-12 | 2015-06-23 | Cree, Inc. | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
| EP2120271A4 (en) | 2007-03-01 | 2015-03-25 | Nec Lighting Ltd | LIGHT EMITTING DIODE DEVICE AND LIGHTING APPARATUS |
| JP5080881B2 (ja) * | 2007-06-27 | 2012-11-21 | ナミックス株式会社 | 発光ダイオードチップの封止体の製造方法 |
| US7652301B2 (en) * | 2007-08-16 | 2010-01-26 | Philips Lumileds Lighting Company, Llc | Optical element coupled to low profile side emitting LED |
| KR101383357B1 (ko) * | 2007-08-27 | 2014-04-10 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
| US20090140279A1 (en) * | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
| US7625104B2 (en) | 2007-12-13 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Light emitting diode for mounting to a heat sink |
| CN100483762C (zh) * | 2008-02-25 | 2009-04-29 | 鹤山丽得电子实业有限公司 | 一种发光二极管器件的制造方法 |
| JP2009229507A (ja) * | 2008-03-19 | 2009-10-08 | Hitachi Chem Co Ltd | 封止フィルム |
| US7973327B2 (en) | 2008-09-02 | 2011-07-05 | Bridgelux, Inc. | Phosphor-converted LED |
| US20100109025A1 (en) * | 2008-11-05 | 2010-05-06 | Koninklijke Philips Electronics N.V. | Over the mold phosphor lens for an led |
| KR101026040B1 (ko) | 2008-11-13 | 2011-03-30 | 삼성전기주식회사 | 박막소자 제조방법 |
| JP5327042B2 (ja) * | 2009-03-26 | 2013-10-30 | 豊田合成株式会社 | Ledランプの製造方法 |
| US8597963B2 (en) * | 2009-05-19 | 2013-12-03 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
| TW201216526A (en) | 2010-08-20 | 2012-04-16 | Koninkl Philips Electronics Nv | Lamination process for LEDs |
| US8210716B2 (en) * | 2010-08-27 | 2012-07-03 | Quarkstar Llc | Solid state bidirectional light sheet for general illumination |
-
2011
- 2011-10-20 KR KR1020137013389A patent/KR101909299B1/ko active Active
- 2011-10-20 CN CN201180052305.1A patent/CN103180945B/zh active Active
- 2011-10-20 JP JP2013535553A patent/JP2013541220A/ja active Pending
- 2011-10-20 EP EP11784784.8A patent/EP2633554A1/en not_active Withdrawn
- 2011-10-20 WO PCT/IB2011/054684 patent/WO2012056378A1/en not_active Ceased
- 2011-10-20 US US13/879,639 patent/US9351348B2/en active Active
- 2011-10-27 TW TW100139214A patent/TWI560400B/zh not_active IP Right Cessation
-
2018
- 2018-05-30 JP JP2018102950A patent/JP6595044B2/ja active Active
-
2019
- 2019-09-25 JP JP2019173665A patent/JP6883632B2/ja active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4007396A (en) * | 1974-11-06 | 1977-02-08 | The Marconi Company Limited | Light emissive diode displays |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012056378A1 (en) | 2012-05-03 |
| JP2018160678A (ja) | 2018-10-11 |
| JP2019220720A (ja) | 2019-12-26 |
| US9351348B2 (en) | 2016-05-24 |
| JP2013541220A (ja) | 2013-11-07 |
| JP6595044B2 (ja) | 2019-10-23 |
| KR101909299B1 (ko) | 2018-10-17 |
| TW201231873A (en) | 2012-08-01 |
| JP6883632B2 (ja) | 2021-06-09 |
| TWI560400B (en) | 2016-12-01 |
| US20130221835A1 (en) | 2013-08-29 |
| EP2633554A1 (en) | 2013-09-04 |
| KR20130140039A (ko) | 2013-12-23 |
| CN103180945A (zh) | 2013-06-26 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Eindhoven, Netherlands Patentee after: KONINKLIJKE PHILIPS N.V. Address before: Eindhoven, Netherlands Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200716 Address after: Holland Schiphol Patentee after: KONINKLIJKE PHILIPS NV Address before: Eindhoven, Netherlands Patentee before: KONINKLIJKE PHILIPS N.V. |