CN103178183B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN103178183B
CN103178183B CN201210574741.1A CN201210574741A CN103178183B CN 103178183 B CN103178183 B CN 103178183B CN 201210574741 A CN201210574741 A CN 201210574741A CN 103178183 B CN103178183 B CN 103178183B
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CN
China
Prior art keywords
light
electrode
layer
type semiconductor
semiconductor layer
Prior art date
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CN201210574741.1A
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English (en)
Chinese (zh)
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CN103178183A (zh
Inventor
罗珉圭
秋圣镐
朱炫承
洪奇锡
卢志希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jingcan Optoelectronics Guangdong Co ltd
Original Assignee
LG Innotek Co Ltd
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Publication date
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Publication of CN103178183A publication Critical patent/CN103178183A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201210574741.1A 2011-12-26 2012-12-26 发光器件 Active CN103178183B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0142546 2011-12-26
KR1020110142546A KR101883842B1 (ko) 2011-12-26 2011-12-26 발광소자 및 이를 포함하는 조명시스템

Publications (2)

Publication Number Publication Date
CN103178183A CN103178183A (zh) 2013-06-26
CN103178183B true CN103178183B (zh) 2018-02-09

Family

ID=47603115

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210574741.1A Active CN103178183B (zh) 2011-12-26 2012-12-26 发光器件

Country Status (5)

Country Link
US (2) US9349920B2 (https=)
EP (1) EP2610928B1 (https=)
JP (1) JP6076073B2 (https=)
KR (1) KR101883842B1 (https=)
CN (1) CN103178183B (https=)

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JP2016015375A (ja) * 2014-07-01 2016-01-28 株式会社タムラ製作所 発光素子
KR102239625B1 (ko) * 2014-10-29 2021-04-13 엘지이노텍 주식회사 발광 소자
KR20160051394A (ko) * 2014-11-03 2016-05-11 엘지이노텍 주식회사 발광소자 및 조명시스템
USD770989S1 (en) * 2015-02-23 2016-11-08 Seoul Viosys Co., Ltd. Light emitting diode
DE102015104144A1 (de) * 2015-03-19 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
KR102038443B1 (ko) * 2015-03-26 2019-10-30 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US10158047B2 (en) 2015-04-03 2018-12-18 Semicon Light Co., Ltd. Semiconductor light emitting device
KR101704455B1 (ko) * 2015-04-08 2017-02-10 주식회사 세미콘라이트 반도체 발광소자
USD775090S1 (en) * 2015-04-23 2016-12-27 Seoul Viosys Co., Ltd. Light emitting diode
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US9851056B2 (en) 2015-10-16 2017-12-26 Seoul Viosys Co., Ltd. Compact light emitting diode chip and light emitting device having a slim structure with secured durability
US10126831B2 (en) 2015-10-16 2018-11-13 Seoul Viosys Co., Ltd. Compact light emitting diode chip, light emitting device and electronic device including the same
KR102453827B1 (ko) * 2018-05-21 2022-10-14 서울바이오시스 주식회사 소형 발광 다이오드 칩, 이를 포함하는 발광 장치 및 전자 장치
EP4235823A3 (en) * 2015-10-16 2023-10-25 Seoul Viosys Co., Ltd. Compact light emitting diode chip
KR102323828B1 (ko) * 2015-10-16 2021-11-10 서울바이오시스 주식회사 소형 발광 다이오드 칩, 이를 포함하는 발광 장치 및 전자 장치
KR102427280B1 (ko) * 2016-01-07 2022-07-29 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 어레이 모듈
KR101845611B1 (ko) * 2016-07-13 2018-04-04 고려대학교 산학협력단 발광창 전극 구조가 구비된 고효율 발광다이오드 제작 방법
CN118867077B (zh) * 2017-10-16 2025-11-14 泉州三安半导体科技有限公司 发光二极管及其制作方法
CN109473527A (zh) * 2018-11-13 2019-03-15 厦门乾照光电股份有限公司 发光二极管的半导体芯片和电流扩展方法
TWI812719B (zh) * 2019-05-20 2023-08-21 晶元光電股份有限公司 發光二極體及其製造方法
KR20220097711A (ko) 2020-12-30 2022-07-08 삼성디스플레이 주식회사 표시 장치
JP7750198B2 (ja) 2022-09-29 2025-10-07 信越半導体株式会社 マイクロｌｅｄ特性評価用ウェーハ及びマイクロｌｅｄ特性評価方法

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Publication number Priority date Publication date Assignee Title
CN108470802A (zh) * 2018-03-30 2018-08-31 映瑞光电科技(上海)有限公司 一种led芯片及其制备方法

Also Published As

Publication number Publication date
JP6076073B2 (ja) 2017-02-08
EP2610928A2 (en) 2013-07-03
CN103178183A (zh) 2013-06-26
JP2013135234A (ja) 2013-07-08
KR20130074471A (ko) 2013-07-04
US20130161585A1 (en) 2013-06-27
EP2610928A3 (en) 2015-04-22
US20160233384A1 (en) 2016-08-11
US10128412B2 (en) 2018-11-13
KR101883842B1 (ko) 2018-08-01
US9349920B2 (en) 2016-05-24
EP2610928B1 (en) 2019-02-13

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Effective date of registration: 20210819

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

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TR01 Transfer of patent right

Effective date of registration: 20250331

Address after: Office 1501, No. 58 Huajin Street, Hengqin New District, Zhuhai City, Guangdong Province 519031

Patentee after: Jingcan Optoelectronics (Guangdong) Co.,Ltd.

Country or region after: China

Address before: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region before: China