CN103165758A - Selective doping method for solar cell based on reverse diffusion - Google Patents
Selective doping method for solar cell based on reverse diffusion Download PDFInfo
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- CN103165758A CN103165758A CN2013101111986A CN201310111198A CN103165758A CN 103165758 A CN103165758 A CN 103165758A CN 2013101111986 A CN2013101111986 A CN 2013101111986A CN 201310111198 A CN201310111198 A CN 201310111198A CN 103165758 A CN103165758 A CN 103165758A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 22
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000005297 pyrex Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 23
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 32
- 210000004027 cell Anatomy 0.000 description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000035755 proliferation Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000007613 slurry method Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a selective doping method for a solar cell based on reverse diffusion. The method includes the steps: diffusing a silicon slice in an aerobic environment at a high temperature to form a PN junction and oxidizing the upper surface of the silicon slice; removing an oxidation layer outside a top electrode area of the silicon slice; depositing an intrinsic amorphous silicon layer on the upper surface of the silicon slice; diffusing the silicon slice in a wet-oxygen environment at a high temperature, reversely diffusing doping elements in a non-top electrode area into the amorphous silicon layer, diffusing doping elements in an oxidation layer of the top electrode area to the top electrode area and oxidizing the amorphous silicon layer and the non-top electrode area of the surface of the silicon slice to form an oxidation layer; and removing the oxidation layer on the surface of the silicon slice to selectively dope the solar cell based on reverse diffusion. By means of reverse diffusion, impurities in the non-top electrode area are absorbed by amorphous silicon, the doping concentration of the non-top electrode area is reduced, the top electrode area is secondarily doped, the doping concentration difference between the top electrode area and the non-top electrode area is further increased, and selective doping effects are improved.
Description
Technical field
The present invention relates to a kind of solar cell selective doping method based on counter diffusion, belong to technical field of solar cell manufacturing.
Background technology
Along with the raising of people's environmental consciousness, day by day vigorous for the demand of clean energy resource.In the new cleaning fuel of people's research, solar energy becomes as a kind of clean energy resource of regional limits that is not subjected to the main direction that Future New Energy Source develops.Solar cell is that people utilize the transform light energy of the sun to be the main device of electric energy.But the conversion efficiency of solar cell can't reach people's requirement at present.Improve the conversion efficiency of solar cell, the manufacturing cost that reduces solar cell becomes the focus of people's research.
The selective doping solar cell is a kind of solar cell of effective low-cost high-efficiency.The design feature of selective doping solar cell is to carry out in the top electrode overlay area of solar cell the contact resistance that heavy doping reduces battery, simultaneously carry out light dope in non-top electrode district, improve the spectral response of battery and reduce the compound of photo-generated carrier in battery.The method of carrying out at present the solar cell selective doping mainly contains: two step diffusion methods, silk screen printing phosphorus slurry method, diffusion mask method etc.Wherein, two step diffusion methods are first the top electrode district heavily to be spread, more whole emitter region is gently spread, and its advantage is that preparation is simple, and still, the district first spreads due to top electrode, the more difficult control of the quadratic distribution of impurity; Silk screen phosphorus slurry method is at part printing high concentration phosphorus slurry with silk screen, by its diffusion and volatilization, One Diffusion Process just can make top electrode district's formation heavy doping, other zones form light dope, but owing to having utilized local phosphorus slurry as diffuse source, the inhomogeneities that must cause diffusion into the surface, this can reduce the efficient of battery.The diffusion mask method is exactly first light dope, carry out again laser or photo etched mask, and then to the top electrode district carrying out secondary heavy doping, the method is owing to first having carried out light dope, reduced the top electrode district when carrying out selective doping and the impurity concentration of substrate poor, can control preferably the selective doping zone of battery, but need to be with the method for laser or photoetching, improve cost, reduced production efficiency.
In sum, at present all there is certain defective in the method for main selective doping, therefore, must seek a kind of manufacture of solar cells technique of novel selective doping.
Summary of the invention
The object of the invention is to: overcome the defective of above-mentioned prior art, propose a kind of solar cell selective doping method based on counter diffusion, technique realizes simple, and production cost is low, and the solar cell properties of acquisition is good.
In order to achieve the above object, the solar cell selective doping method based on counter diffusion that the present invention proposes comprises the steps:
The 1st goes on foot, silicon chip is placed in carries out High temperature diffusion under the wet oxygen environment, forms PN junction, and the silicon chip upper surface generates oxide layer simultaneously, contains the doped chemical of high concentration in this oxide layer;
The 2nd goes on foot, removes silicon chip upper surface top electrode district oxide layer in addition;
The 3rd the step, at silicon chip upper surface deposition of intrinsic amorphous silicon layer;
The 4th step, silicon chip is placed in the wet oxygen environment carries out High temperature diffusion, make the doped chemical in the non-top electrode of silicon chip district diffuse into amorphous silicon layer, reduce the non-top electrode of silicon chip district doped chemical concentration, realize the reverse diffusion of doped chemical; Doped chemical in top electrode district oxide layer realizes the heavy doping in top electrode district to the diffusion of top electrode district, simultaneously the oxidized formation oxide layer of silicon chip surface in amorphous silicon layer and non-top electrode district;
The 5th goes on foot, removes the oxide layer of silicon chip surface, completes the counter diffusion selective doping of solar cell.
The present invention proposes a kind of selective doping method of counter diffusion, absorb the impurity of non-electrode district by amorphous silicon, the doping content of non-electrode district is reduced, electrode district has carried out secondary doping simultaneously, cause the poor further increase of doping content of electrode district and non-electrode district, improved the effect of selective doping; And when counter diffusion technique was carried out, due to the protection that is subject to oxide layer, the silicon chip surface degree of oxidation of electrode district was low; but not the silicon face of electrode district oxidized formation oxide layer; thereby after removing oxide layer, electrode district presents to a certain degree evagination, is conducive to the location of subsequent electrode.
The present invention further improves and is:
1, described silicon chip is p type single crystal silicon, in the 1st step, at first silicon chip is placed in and carries out the High Temperature Pre diffusion under the wet oxygen environment, makes P elements diffuse into silicon chip and forms PN junction, simultaneously the oxidized formation phosphorosilicate glass of silicon chip surface.
2, in the 1st step, oxidated layer thickness is about 0.05 micron, and in oxide layer, the concentration of P elements is about 1e19/cm
3, the technological temperature of High Temperature Pre diffusion is 1000 ℃, the duration is 30 minutes.
3, described silicon chip is n type single crystal silicon, in the 1st step, at first silicon chip has been placed in and has carried out the High Temperature Pre diffusion under the wet oxygen environment, makes boron element diffuse into silicon chip and forms PN junction, simultaneously the oxidized formation Pyrex of silicon chip surface.
4, in the 1st step, oxidated layer thickness is about 0.05 micron, and in silicon thin layer, the concentration of boron element is about 1e19/cm
3, the technological temperature of High Temperature Pre diffusion is 1000 ℃, the duration is 30 minutes.
5, in described the 2nd step, the method for employing silk screen printing keeps the oxide layer in top electrode district, utilizes buffered hydrofluoric acid solution to get rid of other regional oxide layer on silicon chip.
6, in described the 3rd step, the intrinsic amorphous silicon layer thickness of deposit is about 40-50nm.
7, in described the 4th step, the technological temperature of High temperature diffusion is 900 ℃-1100 ℃, and the duration is 30-2 minute.
8, in described the 5th step, adopt buffered hydrofluoric acid solution to remove the oxide layer of silicon chip surface.
The characteristics of this process of the present invention are:
1, be different from traditional selective doping technique, employing be first full sheet heavy doping, rear reverse diffusion sensitive surface impurity reduces the method for the impurity doping content of sensitive surface.
2, use the intrinsic amorphous silicon film absorption battery surface impurity of doped region, make the battery surface can be by other different element pollutions.
3, keep the phosphorosilicate glass of electrode district as the electrode impurities protective layer of the reverse diffusion technology of high temperature impurity, guaranteed the heavy doping of electrode district.
4, adopt the method for wet oxidation in the reverse diffusion process of impurity, make the amorphous silicon layer oxidation, reduced the step of removing amorphous silicon membrane, improved production efficiency.
Description of drawings
The present invention is further illustrated below in conjunction with accompanying drawing.
Fig. 1 is the process flow diagram of the inventive method.
Fig. 2 is the embodiment of the present invention one resulting silicon chip Impurity Distribution of method emulation schematic diagram.
Fig. 3 is the embodiment of the present invention two resulting silicon chip Impurity Distribution of method emulation schematic diagrames.
Fig. 4 is the embodiment of the present invention three resulting silicon chip Impurity Distribution of method emulation schematic diagrames.
Embodiment
The present invention will be further described below in conjunction with the drawings and specific embodiments.
Embodiment one
Be illustrated in figure 1 as the schematic flow sheet of the solar cell selective doping method that the present invention is based on counter diffusion, specifically comprise the steps:
1a, the p type single crystal silicon sheet is placed in carries out High Temperature Pre diffusion under the wet oxygen environment, make P elements diffuse into silicon chip and form PN junction, silicon chip surface forms thickness and is about the phosphorosilicate glass layer 1 of 0.05 micron simultaneously, and in phosphorosilicate glass layer 1, the concentration of P elements is about 1e19/cm
3The technological temperature of High Temperature Pre diffusion is 1000 ℃, and the duration is 30 minutes;
The phosphorosilicate glass that the method for 2a, employing silk screen printing keeps the top electrode district utilizes buffered hydrofluoric acid solution to get rid of other regional phosphorosilicate glass on silicon chip;
3a, be about the intrinsic amorphous silicon layer 2 of 40nm at silicon chip upper surface deposition thickness;
4a, the environment that silicon chip is placed in wet oxygen carry out High temperature diffusion, make the doped chemical (phosphorus) in the non-top electrode of silicon chip district diffuse into amorphous silicon layer, reduce the non-top electrode of silicon chip district doped chemical concentration, realize the reverse diffusion of doped chemical; Doped chemical (phosphorus) in top electrode district oxide layer realizes the heavy doping in top electrode district to the diffusion of top electrode district, simultaneously the oxidized formation phosphorosilicate glass layer 1 of silicon chip surface in amorphous silicon layer and non-top electrode district; The technological temperature of High temperature diffusion is 900 ℃, and the duration is 30 minutes;
5a, employing buffered hydrofluoric acid solution are removed the phosphorosilicate glass of silicon chip surface, complete the counter diffusion selective doping of solar cell.
After utilizing simulation software to carry out emulation to the present embodiment one method, the interior impurity of silicon chip divides sees Fig. 2.Curve in simulation result figure represents respectively the concentration of doped chemical (phosphorus) and the position of PN junction.
Embodiment two
The step of the present embodiment is identical with embodiment one, and difference is the 4th step of step 4a() in the technological parameter of High temperature diffusion under dried oxygen environment, in the present embodiment, the technological temperature of High temperature diffusion is 1000 ℃, the duration is 5 minutes.After utilizing simulation software to carry out emulation to the present embodiment two methods, the interior impurity of silicon chip divides sees Fig. 3.Curve in simulation result figure represents respectively the concentration of doped chemical (phosphorus) and the position of PN junction.
Embodiment three
The step of the present embodiment is identical with embodiment one, and difference is the 4th step of step 4a() in the technological parameter of High temperature diffusion under dried oxygen environment, in the present embodiment, the technological temperature of High temperature diffusion is 1100 ℃, the duration is 2 minutes.After utilizing simulation software to carry out emulation to the present embodiment three methods, the interior impurity of silicon chip divides sees Fig. 4.Curve in simulation result figure represents respectively the concentration of doped chemical (phosphorus) and the position of PN junction.
Contrast the present invention three embodiment can find out from simulation result figure, and along with the rising of the High temperature diffusion temperature of reverse diffusion technology, the PN junction of battery is in continuous intensification.The impurity concentration on the surface of battery first increases afterwards and reduces, but the impurity concentration in top electrode district progressively increases along with the increase of temperature.The heavy doping impurity in top electrode district mainly spreads in cell body, and horizontal proliferation is less, and this is absorbed by amorphous silicon layer with relevant at battery surface deposition of intrinsic amorphous silicon layer, too much horizontal proliferation impurity.This application amorphous silicon layer can play restriction heavily doped region impurity horizontal proliferation effect as the counter diffusion layer of battery.The impurity concentration of lightly doped region is more approaching, lower diffusion temperature can form shallow junction effectively, improve battery shortwave spectral response, comprehensively relatively after, step 4a(the 4th step as can be known) in to adopt 900 ℃ of diffusion temperatures, 30 minutes duration of diffusion be the process conditions of impurity counter diffusion preferably.
Embodiment of the present invention part has been described in detail technique of the present invention as an example of p type single crystal silicon example, technique and the condition of n type single crystal silicon being carried out selective doping are similar with it, difference only is that doped chemical has changed boron into by phosphorus, those skilled in the art fully can be by understanding the present embodiment part, draws inferences about other cases from one instance to realize the counter diffusion selective doping to n type single crystal silicon.Therefore this paper repeats no more.
In addition to the implementation, the present invention can also have other execution modes.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection range of requirement of the present invention.
Claims (9)
1. based on the solar cell selective doping method of counter diffusion, comprise the steps:
The 1st goes on foot, silicon chip is placed in carries out High temperature diffusion under the wet oxygen environment, forms PN junction, and the silicon chip upper surface generates oxide layer simultaneously, contains the doped chemical of high concentration in this oxide layer;
The 2nd goes on foot, removes silicon chip upper surface top electrode district oxide layer in addition;
The 3rd the step, at silicon chip upper surface deposition of intrinsic amorphous silicon layer;
The 4th step, silicon chip is placed in the wet oxygen environment carries out High temperature diffusion, make the doped chemical in the non-top electrode of silicon chip district diffuse into amorphous silicon layer, reduce the non-top electrode of silicon chip district doped chemical concentration, realize the reverse diffusion of doped chemical; Doped chemical in top electrode district oxide layer realizes the heavy doping in top electrode district to the diffusion of top electrode district, simultaneously the oxidized formation oxide layer of silicon chip surface in amorphous silicon layer and non-top electrode district;
The 5th goes on foot, removes the oxide layer of silicon chip surface, completes the counter diffusion selective doping of solar cell.
2. the solar cell selective doping method based on counter diffusion according to claim 1, it is characterized in that: described silicon chip is p type single crystal silicon, in the 1st step, at first silicon chip is placed in and carries out the High Temperature Pre diffusion under the wet oxygen environment, make P elements diffuse into silicon chip and form PN junction, simultaneously the oxidized formation phosphorosilicate glass of silicon chip surface.
3. the solar cell selective doping method based on counter diffusion according to claim 2 is characterized in that: in the 1st step, the oxidated layer thickness of generation is about 0.05 micron, and in oxide layer, the concentration of P elements is about 1e19/cm
3, the technological temperature of High temperature diffusion is 1000 ℃, the duration is 30 minutes.
4. the solar cell selective doping method based on counter diffusion according to claim 1, it is characterized in that: described silicon chip is n type single crystal silicon, in the 1st step, at first silicon chip is placed in and carries out the High Temperature Pre diffusion under the wet oxygen environment, make boron element diffuse into silicon chip and form PN junction, simultaneously the oxidized formation Pyrex of silicon chip surface.
5. the solar cell selective doping method based on counter diffusion according to claim 4 is characterized in that: in the 1st step, oxidated layer thickness is about 0.05 micron, and in oxide layer, the concentration of boron element is 1e19/cm
3, the technological temperature of High Temperature Pre diffusion is 1000 ℃, the duration is 30 minutes.
6. the solar cell selective doping method based on counter diffusion according to claim 1, it is characterized in that: in described the 2nd step, the method of employing silk screen printing keeps the oxide layer in top electrode district, utilizes buffered hydrofluoric acid solution to get rid of other regional oxide layer on silicon chip.
7. the solar cell selective doping method based on counter diffusion according to claim 1 is characterized in that: in described the 3rd step, the intrinsic amorphous silicon layer thickness of deposit is about 40-50nm.
8. the solar cell selective doping method based on counter diffusion according to claim 1 is characterized in that: in described the 4th step, the technological temperature of High temperature diffusion is 900 ℃-1100 ℃, and the duration is 30-2 minute.
9. the solar cell selective doping method based on counter diffusion according to claim 1, is characterized in that: in described the 5th step, adopt buffered hydrofluoric acid solution to remove the oxide layer of silicon chip surface.
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| CN201310111198.6A CN103165758B (en) | 2013-04-01 | 2013-04-01 | A kind of solar cell selective doping method based on counter diffusion |
| CN201510395579.0A CN105140334B (en) | 2013-04-01 | 2013-04-01 | Solar cell selective doping method based on counter diffusion |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111739982A (en) * | 2020-06-30 | 2020-10-02 | 浙江晶科能源有限公司 | Preparation method of selective emitter and solar cell |
| CN113571602A (en) * | 2021-07-23 | 2021-10-29 | 横店集团东磁股份有限公司 | Secondary diffusion selective emitter and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111739982A (en) * | 2020-06-30 | 2020-10-02 | 浙江晶科能源有限公司 | Preparation method of selective emitter and solar cell |
| CN113571602A (en) * | 2021-07-23 | 2021-10-29 | 横店集团东磁股份有限公司 | Secondary diffusion selective emitter and preparation method and application thereof |
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| Publication number | Publication date |
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| CN105140334B (en) | 2017-04-05 |
| CN105140334A (en) | 2015-12-09 |
| CN103165758B (en) | 2015-08-26 |
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