CN105140334B - Solar cell selective doping method based on counter diffusion - Google Patents
Solar cell selective doping method based on counter diffusion Download PDFInfo
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- CN105140334B CN105140334B CN201510395579.0A CN201510395579A CN105140334B CN 105140334 B CN105140334 B CN 105140334B CN 201510395579 A CN201510395579 A CN 201510395579A CN 105140334 B CN105140334 B CN 105140334B
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 230000002085 persistent effect Effects 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 230000002441 reversible effect Effects 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000005297 pyrex Substances 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- 229960002050 hydrofluoric acid Drugs 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000007853 buffer solution Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 22
- 239000000126 substance Substances 0.000 abstract description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000035755 proliferation Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- -1 and in the 1st step Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of solar cell selective doping method based on counter diffusion, step is as follows：Silicon chip is placed under aerobic environment carries out High temperature diffusion formation PN junction, while silicon chip upper surface is oxidized；Oxide layer beyond removing silicon chip top electrode area；In silicon chip upper surface deposition of intrinsic amorphous silicon layer；Silicon chip is placed in wet oxygen environment carries out High temperature diffusion, the doped chemical of non-top electrode district is made inversely to diffuse into amorphous silicon layer, doped chemical in top electrode area oxide layer is spread to top electrode area, while the silicon chip surface of amorphous silicon layer and non-top electrode district is oxidized to form oxide layer；The oxide layer of silicon chip surface is removed, the counter diffusion selective doping of solaode is completed.Method of the present invention using counter diffusion, the impurity of non-top electrode district is absorbed by non-crystalline silicon, reduces the doping content of non-top electrode district, while top electrode area has carried out secondary doping, cause the top electrode area effect for further increasing, improve selective doping poor with the doping content of non-top electrode district.
Description
Technical field
The present invention relates to a kind of solar cell selective doping method based on counter diffusion, belongs to solaode manufacture
Technical field.
Background technology
It is with the raising of people's environmental consciousness, increasingly vigorous for the demand of clean energy resource.In the new clear of people's research
In the clean energy, solar energy becomes the Main way of Future New Energy Source development as a kind of clean energy resource without geographical restrictions.
Solaode is the main device that people are converted to electric energy using the luminous energy of the sun.But, the conversion of current solaode
Efficiency can't reach the requirement of people.Improve solaode conversion efficiency, reduce solaode manufacturing cost into
For the focus of people's research.
Selective doping solaode is a kind of solaode of effective low-cost high-efficiency.Selective doping is too
The construction featuress of positive energy battery are to carry out heavy doping in the Top electrode overlay area of solaode to reduce the contact electricity of battery
Resistance, while being lightly doped in non-top electrode district, in improving the spectral response of battery and reducing battery, photo-generated carrier is compound.
The method for carrying out solar cell selective doping at present mainly has：Two step diffusion methods, silk screen printing phosphorus slurry processes, diffusion mask method
Deng.Wherein, two step diffusion methods are, first to top electrode area re-diffusion, then whole launch site gently to be spread, and its advantage is preparation technology
It is simple, but, as top electrode area is first spread, the more difficult control of quadratic distribution of impurity；Silk screen phosphorus slurry processes are to use
In local printing high concentration phosphorus slurry, by its diffusion and volatilization, One Diffusion Process forms heavy doping with regard to Neng Shi top electrodes area to silk screen, its
His region forms and is lightly doped, but due to make use of the phosphorus of local to starch as diffusion source, necessarily causes the inhomogeneities of diffusion into the surface,
This can reduce the efficiency of battery.Diffusion mask method is exactly first to be lightly doped, then carries out laser or photo etched mask, then again to top electricity
Polar region carries out secondary heavy doping, the method due to being first lightly doped, reduce when top electrode area carries out selective doping with
The impurity concentration of substrate is poor, can preferably control the selective doping region of battery, but need the method with laser or photoetching,
Cost is improve, production efficiency is reduced.
In sum, all there is certain defect in the method for selective doping main at present, therefore, it is necessary to find one kind
The manufacture of solar cells technique of new selective doping.
The content of the invention
It is an object of the invention to：Overcome the defect of above-mentioned prior art, propose a kind of solar-electricity based on counter diffusion
Pond selective doping method, technique realize that simply low production cost, the solar cell properties of acquisition are good.
In order to achieve the above object, the solar cell selective doping method based on counter diffusion proposed by the present invention, bag
Include following steps：
1st step, silicon chip is placed under wet oxygen environment and carries out High temperature diffusion, form PN junction, while silicon chip upper surface generates oxygen
Change layer, the doped chemical containing high concentration in the oxide layer；
Oxide layer beyond 2nd step, removing silicon chip upper surface top electrode area；
3rd step, in silicon chip upper surface deposition of intrinsic amorphous silicon layer；
4th step, silicon chip is placed in wet oxygen environment and carries out High temperature diffusion, spread the doped chemical of silicon chip non-top electrode district
Enter amorphous silicon layer, reduce silicon chip non-top electrode district doped chemical concentration, realize the reverse diffusion of doped chemical；Top electrode area aoxidizes
Doped chemical in floor is spread to top electrode area, realizes the heavy doping in top electrode area, while amorphous silicon layer and non-top electrode district
Silicon chip surface is oxidized to form oxide layer；
5th step, the oxide layer for removing silicon chip surface, complete the counter diffusion selective doping of solaode.
The present invention proposes a kind of selective doping method of counter diffusion, absorbs the impurity of non-electrode region by non-crystalline silicon,
Reduce the doping content of non-electrode region, while electrode district has carried out secondary doping, cause the doping of electrode district and non-electrode region
Concentration difference further increases, and improves the effect of selective doping；And when counter diffusion technique is carried out, due to by oxide layer
Protection, the silicon chip surface degree of oxidation of electrode district is low, and the silicon face of non-electrode region is then oxidized to form oxide layer, so as to
After removing removing oxide layer, electrode district is presented to a certain degree evagination, is conducive to the positioning of subsequent electrode.
The present invention is further improved by：
1st, the silicon chip is p type single crystal silicon, and in the 1st step, silicon chip is placed under wet oxygen environment carries out high temperature prediffusion first,
Make P elements diffuse into silicon chip and form PN junction, while silicon chip surface is oxidized to form phosphorosilicate glass.
2nd, in the 1st step, about 0.05 micron of oxidated layer thickness, in oxide layer, the concentration of P elements is about 1e19/cm3, it is high
The technological temperature of warm prediffusion is 1000 DEG C, and the persistent period is 30 minutes.
3rd, the silicon chip is n type single crystal silicon, and in the 1st step, silicon chip has been placed under wet oxygen environment carries out high temperature pre-expansion first
Dissipate, make boron element diffuse into silicon chip and form PN junction, while silicon chip surface is oxidized to form Pyrex.
4th, in the 1st step, about 0.05 micron of oxidated layer thickness, in silicon thin layer, the concentration of boron element is about 1e19/cm3, it is high
The technological temperature of warm prediffusion is 1000 DEG C, and the persistent period is 30 minutes.
5th, in the 2nd step, the oxide layer in top electrode area is retained using the method for silk screen printing, by other regions on silicon chip
Oxide layer got rid of using buffered hydrofluoric acid solution.
6th, in the 3rd step, the intrinsic amorphous silicon layer thickness of deposit is about 40-50nm.
7th, in the 4th step, the technological temperature of High temperature diffusion is 900 DEG C -1100 DEG C, and the persistent period is 30-2 minutes.
8th, in the 5th step, the oxide layer of silicon chip surface is removed using buffered hydrofluoric acid solution.
The characteristics of of the invention process is：
1st, different from traditional selective doping technique, first full sheet heavy doping is used, inversely spreads sensitive surface afterwards miscellaneous
Matter, the method for reducing the impurity doping concentration of sensitive surface.
2nd, using the impurity of intrinsic amorphous silicon film absorption battery surface doped region so that battery surface will not be by which
His different element pollutions.
3rd, retain the electrode impurities protective layer of the phosphorosilicate glass as the reverse diffusion technique of high temperature impurity of electrode district, it is ensured that
The heavy doping of electrode district.
4th, in the reverse diffusion process of impurity using wet oxidation method, aoxidize amorphous silicon layer, reduce unless
The step of polycrystal silicon film, improve production efficiency.
Description of the drawings
The present invention is further illustrated below in conjunction with the accompanying drawings.
Fig. 1 is the process flow diagram of the inventive method.
Fig. 2 is the silicon chip Impurity Distribution emulation schematic diagram obtained by one method of the embodiment of the present invention.
Fig. 3 is the silicon chip Impurity Distribution emulation schematic diagram obtained by two method of the embodiment of the present invention.
Fig. 4 is the silicon chip Impurity Distribution emulation schematic diagram obtained by three method of the embodiment of the present invention.
Specific embodiment
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
Embodiment one
It is illustrated in figure 1 schematic flow sheet of the present invention based on the solar cell selective doping method of counter diffusion, tool
Body comprises the steps：
1a, p type single crystal silicon piece is placed under wet oxygen environment carries out high temperature prediffusion, make P elements diffuse into silicon chip and form PN
Knot, while silicon chip surface forms thickness about 0.05 micron of phosphorosilicate glass layer 1, in phosphorosilicate glass layer 1, the concentration of P elements is about
For 1e19/cm3；The technological temperature of high temperature prediffusion is 1000 DEG C, and the persistent period is 30 minutes；
2a, the phosphorosilicate glass for retaining top electrode area using the method for silk screen printing, by the phosphorus silicon glass in other regions on silicon chip
Glass is got rid of using buffered hydrofluoric acid solution；
3a, the intrinsic amorphous silicon layer 2 for being about 40nm in silicon chip upper surface deposition thickness；
4a, silicon chip is placed in the environment of wet oxygen and carries out High temperature diffusion, make the doped chemical of silicon chip non-top electrode district（Phosphorus）
Amorphous silicon layer is diffused into, silicon chip non-top electrode district doped chemical concentration is reduced, is realized that doped chemical inversely spreads；Top electrode area oxygen
Change the doped chemical in layer（Phosphorus）Spread to top electrode area, realize the heavy doping in top electrode area, while amorphous silicon layer and non-top electricity
The silicon chip surface of polar region is oxidized to form phosphorosilicate glass layer 1；The technological temperature of High temperature diffusion is 900 DEG C, and the persistent period is 30 points
Clock；
5a, the phosphorosilicate glass that silicon chip surface is removed using buffered hydrofluoric acid solution, the counter diffusion for completing solaode are selected
Property doping.
After being emulated to one method of the present embodiment using simulation software, in silicon chip, impurity point is shown in Fig. 2.In simulation result figure
Curve represent doped chemical respectively（Phosphorus）Concentration and PN junction position.
Embodiment two
The step of the present embodiment, is identical with embodiment one, and difference is step 4a（4th step）In do oxygen environment under high temperature expand
Scattered technological parameter, in the present embodiment, the technological temperature of High temperature diffusion is 1000 DEG C, and the persistent period is 5 minutes.It is soft using emulating
After part is emulated to two method of the present embodiment, in silicon chip, impurity point is shown in Fig. 3.Curve in simulation result figure represents doping respectively
Element（Phosphorus）Concentration and PN junction position.
Embodiment three
The step of the present embodiment, is identical with embodiment one, and difference is step 4a（4th step）In do oxygen environment under high temperature expand
Scattered technological parameter, in the present embodiment, the technological temperature of High temperature diffusion is 1100 DEG C, and the persistent period is 2 minutes.It is soft using emulating
After part is emulated to three method of the present embodiment, in silicon chip, impurity point is shown in Fig. 4.Curve in simulation result figure represents doping respectively
Element（Phosphorus）Concentration and PN junction position.
Contrast three embodiments of the invention, as can be seen that the high temperature with reverse diffusion technique expands from simulation result figure
The rising of scattered temperature, the PN junction of battery are constantly being deepened.The impurity concentration on the surface of battery first increases and reduces afterwards, but top electrode
The impurity concentration in area is stepped up with the increase of temperature.The heavy doping impurity in top electrode area is mainly expanded into battery body
Dissipate, horizontal proliferation is less, and this is relevant with battery surface deposition of intrinsic amorphous silicon layer, and excessive horizontal proliferation impurity is by non-crystalline silicon
Layer absorbs.This explanation can play restriction heavily doped region impurity horizontal proliferation using amorphous silicon layer as the counter diffusion layer of battery
Effect.Relatively, relatively low diffusion temperature can be effectively formed shallow junction to the impurity concentration of lightly doped region, improve battery short
Wave spectrum is responded, after Integrated comparative, it is known that step 4a（4th step）900 DEG C of middle employing diffusion temperature, diffusion persistent period 30
Minute is preferable impurity counter diffusion process conditions.
Embodiment of the present invention part has been described in detail to present invention process by taking p type single crystal silicon as an example, to n type single crystal silicon
The technique and condition for carrying out selective doping is similar to therewith, is differed only in doped chemical and has been changed boron, art technology into by phosphorus
Personnel can draw inferences about other cases from one instance to realize the counter diffusion selective doping to n type single crystal silicon by understanding the present embodiment part completely.
Therefore repeat no more herein.
In addition to the implementation, the present invention can also have other embodiment.All employing equivalents or equivalent transformation shape
Into technical scheme, all fall within the protection domain of application claims.
Claims (3)
1. the solar cell selective doping method based on counter diffusion, comprises the steps：
1st step, n type single crystal silicon silicon chip is placed under wet oxygen environment carries out high temperature prediffusion, make boron element diffuse into silicon chip and formed
PN junction, while silicon chip surface is oxidized to form Pyrex layer；Boron element containing high concentration in the oxide layer, the oxidation of generation
Thickness degree is 0.05 micron, and in the oxide layer, the concentration of boron element is about 1e19/cm3, the technological temperature of high temperature prediffusion is
1000 DEG C, the persistent period is 30 minutes；
Oxide layer beyond 2nd step, removing silicon chip upper surface top electrode area；
3rd step, silicon chip upper surface deposition thickness for 40-50nm intrinsic amorphous silicon layer；
4th step, silicon chip is placed in wet oxygen environment and carries out High temperature diffusion, diffuse into the boron element of silicon chip non-top electrode district intrinsic
Amorphous silicon layer, reduces silicon chip non-top electrode district boron element concentration, realizes the reverse diffusion of boron element；In top electrode area oxide layer
Boron element is spread to top electrode area, realizes the heavy doping in top electrode area, while the silicon chip of intrinsic amorphous silicon layer and non-top electrode district
Surface is oxidized to form oxide layer；In 4th step, the technological temperature of High temperature diffusion is 900 DEG C, and the persistent period is 30 minutes；
5th step, all of oxide layer of removal silicon chip surface, complete the counter diffusion selective doping of solaode.
2. the solar cell selective doping method based on counter diffusion according to claim 1, it is characterised in that：It is described
In 2nd step, the oxide layer in top electrode area is retained using the method for silk screen printing, the oxide layer in other regions on silicon chip is utilized into hydrogen
Fluoric acid buffer is got rid of.
3. the solar cell selective doping method based on counter diffusion according to claim 1, it is characterised in that：It is described
In 5th step, the oxide layer of silicon chip surface is removed using buffered hydrofluoric acid solution.
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| CN201310111198.6A CN103165758B (en) | 2013-04-01 | 2013-04-01 | A kind of solar cell selective doping method based on counter diffusion |
| CN201510395579.0A CN105140334B (en) | 2013-04-01 | 2013-04-01 | Solar cell selective doping method based on counter diffusion |
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| CN111739982B (en) * | 2020-06-30 | 2022-10-11 | 浙江晶科能源有限公司 | Preparation method of selective emitter and solar cell |
| CN113571602B (en) * | 2021-07-23 | 2023-05-23 | 横店集团东磁股份有限公司 | Secondary diffusion selective emitter and preparation method and application thereof |
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| CN101800266A (en) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | Preparation method of selective emitting electrode crystal silicon solar battery |
| CN102007599A (en) * | 2008-04-14 | 2011-04-06 | 吉布尔.施密德有限责任公司 | Method for the selective doping of silicon and silicon substrate treated therewith |
| KR101161810B1 (en) * | 2009-08-21 | 2012-07-03 | 주식회사 효성 | Method of preparing selective emitter of solar cell and method of preparing solar cell |
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| KR100974221B1 (en) * | 2008-04-17 | 2010-08-06 | 엘지전자 주식회사 | Method for forming selective emitter of solar cell using laser annealing and Method for manufacturing solar cell using the same |
| MY163052A (en) * | 2009-10-30 | 2017-08-15 | Merck Patent Gmbh | Process For The Production Of Solar Cells Comprising A Selective Emitter |
| US8110431B2 (en) * | 2010-06-03 | 2012-02-07 | Suniva, Inc. | Ion implanted selective emitter solar cells with in situ surface passivation |
| CN102468365B (en) * | 2010-11-18 | 2014-07-16 | 台湾茂矽电子股份有限公司 | Manufacturing method for double-face solar cell |
| FR2976727B1 (en) * | 2011-06-17 | 2013-11-08 | Commissariat Energie Atomique | METHOD FOR PRODUCING A SELECTIVE TRANSMITTER PHOTOVOLTAIC CELL |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102007599A (en) * | 2008-04-14 | 2011-04-06 | 吉布尔.施密德有限责任公司 | Method for the selective doping of silicon and silicon substrate treated therewith |
| KR101161810B1 (en) * | 2009-08-21 | 2012-07-03 | 주식회사 효성 | Method of preparing selective emitter of solar cell and method of preparing solar cell |
| CN101800266A (en) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | Preparation method of selective emitting electrode crystal silicon solar battery |
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| CN103165758B (en) | 2015-08-26 |
| CN105140334A (en) | 2015-12-09 |
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