CN103165758B - A kind of solar cell selective doping method based on counter diffusion - Google Patents
A kind of solar cell selective doping method based on counter diffusion Download PDFInfo
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- CN103165758B CN103165758B CN201310111198.6A CN201310111198A CN103165758B CN 103165758 B CN103165758 B CN 103165758B CN 201310111198 A CN201310111198 A CN 201310111198A CN 103165758 B CN103165758 B CN 103165758B
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 55
- 239000010703 silicon Substances 0.000 claims abstract description 55
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 21
- 239000000126 substance Substances 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 32
- 210000004027 cell Anatomy 0.000 description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000035755 proliferation Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention relates to a kind of solar cell selective doping method based on counter diffusion, step is as follows: carry out High temperature diffusion under silicon chip being placed in aerobic environment and form PN junction, silicon chip upper surface is oxidized simultaneously; Oxide layer beyond removing silicon chip top electrode district; At silicon chip upper surface deposition of intrinsic amorphous silicon layer; Silicon chip is placed in wet oxygen environment and carries out High temperature diffusion, make that the doped chemical of non-top electrode district is reverse diffuses into amorphous silicon layer, doped chemical in top electrode district oxide layer is to the diffusion of top electrode district, the simultaneously oxidized formation oxide layer of silicon chip surface of amorphous silicon layer and non-top electrode district; Remove the oxide layer of silicon chip surface, complete the counter diffusion selective doping of solar cell.The present invention adopts the method for counter diffusion, absorbed the impurity of non-top electrode district by amorphous silicon, the doping content of non-top electrode district is reduced, top electrode district has carried out secondary doping simultaneously, cause the doping content of top electrode district and non-top electrode district difference to increase further, improve the effect of selective doping.
Description
Technical field
The present invention relates to a kind of solar cell selective doping method based on counter diffusion, belong to technical field of solar cell manufacturing.
Background technology
Along with the raising of people's environmental consciousness, the demand for clean energy resource is day by day vigorous.In the new cleaning fuel of people's research, solar energy becomes the Main way of Future New Energy Source development as a kind of clean energy resource do not limited by region.Solar cell is the main device of transform light energy for electric energy that people utilize the sun.But the conversion efficiency of current solar cell can't reach the requirement of people.Improve the conversion efficiency of solar cell, the manufacturing cost reducing solar cell becomes the focus of people's research.
Selective doping solar cell is a kind of solar cell of effective low-cost high-efficiency.The design feature of selective doping solar cell is to carry out the contact resistance that heavy doping reduces battery in the top electrode overlay area of solar cell, carry out light dope in non-top electrode district simultaneously, improve the spectral response of battery and reduce the compound of photo-generated carrier in battery.The method of carrying out solar cell selective doping at present mainly contains: two step diffusion methods, silk screen printing phosphorus slurry processes, diffusion mask method etc.Wherein, two step diffusion methods first heavily spread top electrode district, gentlier spread whole emitter region, and its advantage is that preparation is simple, but district first spreads due to top electrode, the more difficult control of quadratic distribution of impurity; Silk screen phosphorus slurry processes is at local printing high concentration phosphorus slurry with silk screen, by its diffusion and volatilization, One Diffusion Process forms heavy doping with regard to Neng Shi top electrode district, other regions form light dope, but because the phosphorus slurry that make use of local is as diffuse source, must cause the inhomogeneities of diffusion into the surface, this can reduce the efficiency of battery.Diffusion mask method is exactly first light dope, carry out laser or photo etched mask again, and then secondary heavy doping is carried out to top electrode district, the method is owing to first having carried out light dope, reduce when top electrode district carries out selective doping and the impurity concentration of substrate poor, the selective doping region of battery can be controlled preferably, but need the method with laser or photoetching, improve cost, reduce production efficiency.
In sum, all there is certain defect in the method for selective doping main at present, therefore, must find a kind of manufacture of solar cells technique of novel selective doping.
Summary of the invention
The object of the invention is to: the defect overcoming above-mentioned prior art, propose a kind of solar cell selective doping method based on counter diffusion, technique realizes simple, and production cost is low, and the solar cell properties of acquisition is good.
In order to achieve the above object, the solar cell selective doping method based on counter diffusion that the present invention proposes, comprises the steps:
1st step, silicon chip is placed in wet oxygen environment under carry out High temperature diffusion, form PN junction, silicon chip upper surface generates oxide layer simultaneously, the doped chemical containing high concentration in this oxide layer;
Oxide layer beyond 2nd step, removing silicon chip upper surface top electrode district;
3rd step, at silicon chip upper surface deposition of intrinsic amorphous silicon layer;
4th step, silicon chip is placed in wet oxygen environment carries out High temperature diffusion, make the doped chemical of silicon chip non-top electrode district diffuse into amorphous silicon layer, reduce silicon chip non-top electrode district doped chemical concentration, realize the reverse diffusion of doped chemical; Doped chemical in top electrode district oxide layer, to the diffusion of top electrode district, realizes the heavy doping in top electrode district, simultaneously the oxidized formation oxide layer of silicon chip surface of amorphous silicon layer and non-top electrode district;
The oxide layer of the 5th step, removal silicon chip surface, completes the counter diffusion selective doping of solar cell.
The present invention proposes a kind of selective doping method of counter diffusion, the impurity of non-electrode region is absorbed by amorphous silicon, the doping content of non-electrode region is reduced, secondary doping has been carried out in electrode district simultaneously, cause the doping content of electrode district and non-electrode region difference to increase further, improve the effect of selective doping; And when counter diffusion technique is carried out, owing to being subject to the protection of oxide layer, the silicon chip surface degree of oxidation of electrode district is low; the silicon face then oxidized formation oxide layer of non-electrode region; thus after removal oxide layer, electrode district presents to a certain degree evagination, is conducive to the location of subsequent electrode.
The present invention further improves and is:
1, described silicon chip is p type single crystal silicon, in the 1st step, carries out High Temperature Pre diffusion under first silicon chip being placed in wet oxygen environment, makes P elements diffuse into silicon chip and forms PN junction, the oxidized formation phosphorosilicate glass of silicon chip surface simultaneously.
2, in the 1st step, oxidated layer thickness is about 0.05 micron, and in oxide layer, the concentration of P elements is about 1e19/cm
3, the technological temperature of High Temperature Pre diffusion is 1000 DEG C, and the duration is 30 minutes.
3, described silicon chip is n type single crystal silicon, in the 1st step, carries out High Temperature Pre diffusion under first silicon chip being placed in wet oxygen environment, makes boron element diffuse into silicon chip and forms PN junction, the oxidized formation Pyrex of silicon chip surface simultaneously.
4, in the 1st step, oxidated layer thickness is about 0.05 micron, and in silicon thin layer, the concentration of boron element is about 1e19/cm
3, the technological temperature of High Temperature Pre diffusion is 1000 DEG C, and the duration is 30 minutes.
5, in described 2nd step, adopt the method for silk screen printing to retain the oxide layer in top electrode district, utilize buffered hydrofluoric acid solution to get rid of the oxide layer in other region on silicon chip.
6, in described 3rd step, the intrinsic amorphous silicon layer thickness of deposit is about 40-50nm.
7, in described 4th step, the technological temperature of High temperature diffusion is 900 DEG C-1100 DEG C, and the duration is 30-2 minute.
8, in described 5th step, buffered hydrofluoric acid solution is adopted to remove the oxide layer of silicon chip surface.
The feature of this process of the present invention is:
1, be different from traditional selective doping technique, employing be first full sheet heavy doping, rear reverse diffusion sensitive surface impurity, reduces the method for impurity doping concentration of sensitive surface.
2, apply the impurity of intrinsic amorphous silicon film absorption battery surface doped region, make battery surface can not by other different element pollutions.
3, retain the phosphorosilicate glass of electrode district as the electrode impurities protective layer of the reverse diffusion technology of high temperature impurity, ensure that the heavy doping of electrode district.
4, in the reverse diffusion process of impurity, adopt the method for wet oxidation, amorphous silicon layer is oxidized, decrease the step removing amorphous silicon membrane, improve production efficiency.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Fig. 1 is the process flow diagram of the inventive method.
Fig. 2 is the silicon chip Impurity Distribution emulation schematic diagram that the embodiment of the present invention one method obtains.
Fig. 3 is the silicon chip Impurity Distribution emulation schematic diagram that the embodiment of the present invention two method obtains.
Fig. 4 is the silicon chip Impurity Distribution emulation schematic diagram that the embodiment of the present invention three method gained arrives.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
Embodiment one
Be illustrated in figure 1 the schematic flow sheet of the solar cell selective doping method that the present invention is based on counter diffusion, specifically comprise the steps:
1a, p type single crystal silicon sheet is placed in wet oxygen environment under carry out High Temperature Pre diffusion, make P elements diffuse into silicon chip and form PN junction, silicon chip surface forms the phosphorosilicate glass layer 1 that thickness is about 0.05 micron simultaneously, and in phosphorosilicate glass layer 1, the concentration of P elements is about 1e19/cm
3; The technological temperature of High Temperature Pre diffusion is 1000 DEG C, and the duration is 30 minutes;
The method of 2a, employing silk screen printing retains the phosphorosilicate glass in top electrode district, utilizes buffered hydrofluoric acid solution to get rid of the phosphorosilicate glass in other region on silicon chip;
3a, be about the intrinsic amorphous silicon layer 2 of 40nm at silicon chip upper surface deposition thickness;
4a, environment silicon chip being placed in wet oxygen carry out High temperature diffusion, make the doped chemical of silicon chip non-top electrode district (phosphorus) diffuse into amorphous silicon layer, reduce silicon chip non-top electrode district doped chemical concentration, realize the reverse diffusion of doped chemical; Doped chemical (phosphorus) in top electrode district oxide layer, to the diffusion of top electrode district, realizes the heavy doping in top electrode district, simultaneously the oxidized formation phosphorosilicate glass layer 1 of silicon chip surface of amorphous silicon layer and non-top electrode district; The technological temperature of High temperature diffusion is 900 DEG C, and the duration is 30 minutes;
5a, employing buffered hydrofluoric acid solution remove the phosphorosilicate glass of silicon chip surface, complete the counter diffusion selective doping of solar cell.
After utilizing simulation software to emulate the present embodiment one method, in silicon chip, impurity divides and sees Fig. 2.Curve in simulation result figure represents the concentration of doped chemical (phosphorus) and the position of PN junction respectively.
Embodiment two
The step of the present embodiment is identical with embodiment one, and difference is step 4a(the 4th step) in the technological parameter of High temperature diffusion under dry oxygen environment, in the present embodiment, the technological temperature of High temperature diffusion is 1000 DEG C, and the duration is 5 minutes.After utilizing simulation software to emulate the present embodiment two method, in silicon chip, impurity divides and sees Fig. 3.Curve in simulation result figure represents the concentration of doped chemical (phosphorus) and the position of PN junction respectively.
Embodiment three
The step of the present embodiment is identical with embodiment one, and difference is step 4a(the 4th step) in the technological parameter of High temperature diffusion under dry oxygen environment, in the present embodiment, the technological temperature of High temperature diffusion is 1100 DEG C, and the duration is 2 minutes.After utilizing simulation software to emulate the present embodiment three method, in silicon chip, impurity divides and sees Fig. 4.Curve in simulation result figure represents the concentration of doped chemical (phosphorus) and the position of PN junction respectively.
Contrast the present invention three embodiments, as can be seen from simulation result figure, along with the rising of the High temperature diffusion temperature of reverse diffusion technology, the PN junction of battery is in continuous intensification.The impurity concentration on the surface of battery first increases rear reduction, but the impurity concentration in top electrode district progressively increases along with the increase of temperature.The heavy doping impurity in top electrode district mainly spreads in cell body, and horizontal proliferation is less, and this is relevant with at battery surface deposition of intrinsic amorphous silicon layer, and too much horizontal proliferation impurity is absorbed by amorphous silicon layer.This application amorphous silicon layer, as the counter diffusion layer of battery, can play restriction heavily doped region impurity horizontal proliferation effect.The impurity concentration of lightly doped region relatively, lower diffusion temperature can form shallow junction effectively, improve battery shortwave spectral response, after Integrated comparative, known step 4a(the 4th step) in adopt diffusion temperature 900 DEG C, 30 minutes duration of diffusion are good impurity counter diffusion process conditions.
Embodiment of the present invention part has been described in detail present invention process for p type single crystal silicon, the technique of selective doping is carried out to n type single crystal silicon and condition similar with it, difference is only that doped chemical has changed boron into by phosphorus, those skilled in the art can, by understanding the present embodiment part, draw inferences about other cases from one instance to realize the counter diffusion selective doping to n type single crystal silicon completely.Therefore repeat no more herein.
In addition to the implementation, the present invention can also have other execution modes.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection range of application claims.
Claims (1)
1., based on the solar cell selective doping method of counter diffusion, comprise the steps:
1st step, silicon chip is placed in wet oxygen environment under carry out High Temperature Pre diffusion, make P elements diffuse into silicon chip and form PN junction, the oxidized generation phosphorosilicate glass layer of silicon chip upper surface simultaneously, the doped chemical containing high concentration in this oxide layer; Described silicon chip is p type single crystal silicon, and the oxidated layer thickness of generation is 0.05 micron, and in oxide layer, the concentration of P elements is about 1e19/cm3, and the technological temperature of High Temperature Pre diffusion is 1000 DEG C, and the duration is 30 minutes;
Oxide layer beyond 2nd step, removing silicon chip upper surface top electrode district;
3rd step, at silicon chip upper surface deposition of intrinsic amorphous silicon layer;
4th step, silicon chip is placed in wet oxygen environment carries out High temperature diffusion, make the doped chemical of silicon chip non-top electrode district diffuse into intrinsic amorphous silicon layer, reduce silicon chip non-top electrode district doped chemical concentration, realize the reverse diffusion of doped chemical; Doped chemical in top electrode district oxide layer, to the diffusion of top electrode district, realizes the heavy doping in top electrode district, simultaneously the oxidized formation oxide layer of silicon chip surface of intrinsic amorphous silicon layer and non-top electrode district; In described 4th step, the technological temperature of High temperature diffusion is 900 DEG C-1100 DEG C, and the duration is 30-2 minute;
The oxide layer that 5th step, removal silicon chip surface are all, completes the counter diffusion selective doping of solar cell.
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|---|---|---|---|
| CN201510395579.0A CN105140334B (en) | 2013-04-01 | 2013-04-01 | Solar cell selective doping method based on counter diffusion |
| CN201310111198.6A CN103165758B (en) | 2013-04-01 | 2013-04-01 | A kind of solar cell selective doping method based on counter diffusion |
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| CN111739982B (en) * | 2020-06-30 | 2022-10-11 | 浙江晶科能源有限公司 | Preparation method of selective emitter and solar cell |
| CN113571602B (en) * | 2021-07-23 | 2023-05-23 | 横店集团东磁股份有限公司 | Secondary diffusion selective emitter and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101884115A (en) * | 2008-04-17 | 2010-11-10 | Lg电子株式会社 | Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell |
| WO2011050889A2 (en) * | 2009-10-30 | 2011-05-05 | Merck Patent Gmbh | Method for producing solar cells having a selective emitter |
| CN102468365A (en) * | 2010-11-18 | 2012-05-23 | 台湾茂矽电子股份有限公司 | Manufacturing method for double-face solar cell |
| WO2012172226A1 (en) * | 2011-06-17 | 2012-12-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for producing a photovoltaic cell having a selective emitter |
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| DE102008019402A1 (en) * | 2008-04-14 | 2009-10-15 | Gebr. Schmid Gmbh & Co. | Process for the selective doping of silicon and silicon substrate treated therewith |
| KR101161810B1 (en) * | 2009-08-21 | 2012-07-03 | 주식회사 효성 | Method of preparing selective emitter of solar cell and method of preparing solar cell |
| CN101800266B (en) * | 2010-03-12 | 2011-06-22 | 上海太阳能电池研究与发展中心 | Preparation method of selective emitting electrode crystal silicon solar battery |
| US8110431B2 (en) * | 2010-06-03 | 2012-02-07 | Suniva, Inc. | Ion implanted selective emitter solar cells with in situ surface passivation |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101884115A (en) * | 2008-04-17 | 2010-11-10 | Lg电子株式会社 | Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell |
| WO2011050889A2 (en) * | 2009-10-30 | 2011-05-05 | Merck Patent Gmbh | Method for producing solar cells having a selective emitter |
| CN102468365A (en) * | 2010-11-18 | 2012-05-23 | 台湾茂矽电子股份有限公司 | Manufacturing method for double-face solar cell |
| WO2012172226A1 (en) * | 2011-06-17 | 2012-12-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for producing a photovoltaic cell having a selective emitter |
Non-Patent Citations (1)
| Title |
|---|
| Rapolu, K.;Singh, Pritpal;Shea, S.P..Two dimensional numerical modeling of a silicon solar cell with selective emitter configuration.《Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE 》.2010,002227-002232. * |
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| CN103165758A (en) | 2013-06-19 |
| CN105140334A (en) | 2015-12-09 |
| CN105140334B (en) | 2017-04-05 |
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