CN103165650B - Organic light emitting display and manufacture method thereof - Google Patents
Organic light emitting display and manufacture method thereof Download PDFInfo
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- CN103165650B CN103165650B CN201210545120.0A CN201210545120A CN103165650B CN 103165650 B CN103165650 B CN 103165650B CN 201210545120 A CN201210545120 A CN 201210545120A CN 103165650 B CN103165650 B CN 103165650B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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Abstract
The invention provides a kind of organic light emitting display and manufacture method thereof, described organic light emitting display for prevent due to formed be configured to increase the light layer of compensation at visual angle time the hydrogen thin-film transistor that causes become bad, and organic light emitting display can comprise the first substrate and second substrate with multiple pixel; Be formed in the thin-film transistor at each pixel place of first substrate; Be formed in the color-filter layer at each pixel place; Be formed in the insulating barrier on color-filter layer; Form the light layer of compensation made on the insulating layer and by not hydrogeneous material; Be formed in the pixel electrode on the light layer of compensation of each pixel; Formed on the pixel electrode with the organic light-emitting units of luminescence; With the public electrode be formed on organic light-emitting units.
Description
Technical field
The present invention relates to organic light emitting display, and more particularly, relate to a kind of organic light emitting display and the manufacture method thereof that can strengthen look viewing angle characteristic.
Background technology
In recent years, owing to developing the organic light emitting display using a kind of conjugated polymer-polyphenylene ethylene (PPV), actively developed organic material as having the research of the conjugated polymer of conductivity.Continue to have carried out the research such organic material being applied to thin-film transistor, transducer, laser, photoelectric cell etc., wherein, what actively develop most is research to organic light emitting display.
When making organic luminescent device by fluorophor base/phosphor base inorganic material, needs exceed the operating voltage of interchange 200V and display device is manufactured by vacuum deposition process, cause thus being difficult to manufacture large-sized monitor, particularly be difficult to demonstrate light emission characteristic, and there is the high shortcoming of manufacturing cost.But, the organic light emitting display be made up of organic material has and is such as beneficial to large scale screen, convenient manufacturing process and especially easily realize blue emission, and allow the advantages such as exploitation flexible light-emitting display part, therefore it is highly considered as display device of future generation.
At present, similar to liquid crystal display device, actively develop the research of the active matrix organic light-emitting display device each pixel to active matrix driving element, to realize flat-panel monitor.Particularly, in recent years, the color-filter layer for realizing various color being formed in the substrate being formed with thin-film transistor, and allowing light selfluminous cell to send pass color-filter layer thus show various color thus.But, in the organic light emitting display with this TFT providing color filters (COT) structure, produce color change according to visual angle, thus the problem causing visual angle narrow.
Summary of the invention
The present invention is to solve the problem in design, and the object of this invention is to provide a kind of organic light emitting display and manufacture method thereof, defines light layer of compensation and have the viewing angle characteristic of enhancing in described organic light emitting display.
Another object of the present invention is to provide a kind of organic light emitting display and manufacture method thereof, wherein in the gaseous environment of not hydrogen, forms light layer of compensation, thus prevents from becoming bad because hydrogen penetrates into the thin-film transistor caused in thin film transistor channel layer.
Another object of the present invention is to provide a kind of organic light emitting display and manufacture method thereof, on light layer of compensation, wherein forming the hole for discharging foreign substance, thus effectively discharging foreign substance during vacuum solidification technique.
To achieve these goals, can comprise according to organic light emitting display of the present invention: first substrate and the second substrate with multiple pixel; Form thin-film transistor on the first substrate; Be formed in the first insulating barrier comprised on the first substrate of thin-film transistor; Be formed in the color-filter layer on the first insulating barrier in pixel region; Be formed in the second insulating barrier comprised on the first substrate of color-filter layer; Form the light layer of compensation made over the second dielectric and by not hydrogeneous material, the wherein drain bonding pad of light layer of compensation contact membrane transistor; Be formed in the pixel electrode on the light layer of compensation of each pixel region; Formed on the pixel electrode with the organic light-emitting units of luminescence; With the public electrode be formed on organic light-emitting units.
Organic light emitting display also comprises and is formed in being used on light layer of compensation and discharges multiple holes of foreign substance, and its mesopore is formed on the outer wall of each pixel region.
Light layer of compensation is by SiN
x, tin indium oxide (ITO), indium zinc oxide (IZO) etc. make, refraction coefficient is 1.5-2.7, and now, SiN
xdeposit thickness be
multiple hole is formed on light layer of compensation to discharge foreign substance during vacuum solidification technique.
In addition, the method for organic light emitting display constructed in accordance can comprise: provide the first substrate and second substrate that comprise multiple pixel; Thin-film transistor is formed at each pixel place of first substrate; The first substrate comprising thin-film transistor is formed the first insulating barrier; The first insulating barrier in pixel region forms color-filter layer; The first substrate comprising color-filter layer is formed the second insulating barrier; Be mixed with SiH
4and N
2gaseous environment in, formed over the second dielectric by SiN
xthe light layer of compensation that not hydrogeneous material is made, wherein light layer of compensation contact membrane transistor drain weld pad; The light layer of compensation of each pixel region forms pixel electrode; Light layer of compensation is formed and is used for luminous organic light-emitting units; Organic light-emitting units forms public electrode; Second substrate is attached to by first substrate.
Now, can be included in further according to method of the present invention and be mixed with SiH
4and N
2gaseous environment in form SiN
xlayer, is wherein mixed with SiH by replacing replacing
4and N
2gaseous environment and be mixed with SiH
4and NH
3gaseous environment form SiN
x.
In addition, preceding method also can comprise under vacuum conditions, performs vacuum solidification, the predetermined hold-time cycle to the layer formed after formation pixel electrode, to discharge the foreign substance comprised in the formed layer via hole.
The first, according to the present invention, the transparent optical layer of compensation that refraction coefficient is 1.5-2.7 can be formed, thus strengthen viewing angle characteristic.
The second, according to the present invention, light layer of compensation can being formed in the gaseous environment of not hydrogen, hydrogen trap can be prevented in the channel layer of thin-film transistor when forming light layer of compensation thus, thus prevent the thin-film transistor caused due to hydrogen trap from becoming bad.
3rd, according to the present invention, hole for discharging foreign substance can be formed effectively to discharge foreign substance during vacuum solidification technique on light layer of compensation, thus prevent the fault because foreign substance causes.
Accompanying drawing explanation
Accompanying drawing is intended to provide a further understanding of the present invention and is incorporated to specification and forms the part of specification.Described accompanying drawing illustrates exemplary execution mode of the present invention, and is used from specification word one and explains principle of the present invention.
In the accompanying drawings:
Fig. 1 illustrates the equivalent circuit diagram of organic light emitting display of the present invention;
Fig. 2 illustrates the structural section figure of the organic light emitting display of first embodiment of the invention;
Fig. 3 A-3F illustrates the method figure of the manufacture organic light emitting display of first embodiment of the invention;
Fig. 4 illustrates the structural section figure of the organic light emitting display of second embodiment of the invention; And
Fig. 5 A-5F illustrates the method figure of the manufacture organic light emitting display of second embodiment of the invention.
Embodiment
Below, the present invention is described in detail with reference to accompanying drawing.
Fig. 1 illustrates the equivalent circuit diagram according to organic light emitting display of the present invention.As shown in fig. 1, organic light emitting display 1 can comprise the multiple pixels limited by the grid line intersected in a vertical and horizontal direction respectively (G) and data wire (D), and can be parallel to data wire (D) and arrange power line (P).
Switching thin-film transistor (Ts) can be provided in each pixel, drive thin-film transistor (Td), capacitor (C) and organic illuminating element (E).The grid of switching thin-film transistor (Ts) is connected to data wire (D), and its drain electrode is connected to the grid driving thin-film transistor (Td).In addition, drive the source electrode of thin-film transistor (Td) to be connected to power line (P), and its drain electrode is connected to light-emitting component (E).
When in the organic light emitting display with aforementioned structure, when receiving sweep signal via grid line (G), this signal is applied to the grid of switching thin-film transistor (Ts) with driving switch thin-film transistor (Ts).Along with switching thin-film transistor (Ts) is driven, via source electrode and drain electrode at the data-signal driving the grid of thin-film transistor (Td) to receive to receive via data wire (D) to drive this driving thin-film transistor (Td).
Now, electric current flows through power line (P), and along with driving thin-film transistor (Td) to be driven, via source electrode and drain electrode, the electric current of power line (P) is applied to light-emitting component (E).Now, change according to the voltage between grid and drain electrode via the size of current driving thin-film transistor (Td) to export.
As organic illuminating element, when receiving electric current via driving thin-film transistor (Td), light-emitting component (E) is luminous to show image.Now, light emissive porwer according to the current strength change being applied to light-emitting component, and controls luminous intensity by controlling current strength thus.
Fig. 2 illustrates the sectional view of the practical structures of organic light emitting display according to a first embodiment of the present invention, describes the structure of the organic light emitting display according to this embodiment hereinafter with reference to accompanying drawing.
As shown in Figure 2, pixel R for exporting ruddiness can be comprised, for exporting the pixel G of green glow and the pixel B for exporting blue light according to the organic light emitting display of this embodiment.Although not shown, the pixel W for exporting white light can be comprised according to organic light emitting display of the present invention.In this case, pixel W exports white light to increase the overall brightness of organic light emitting display.
Be formed with color-filter layer using the white light will exported from organic light-emitting units as specific color light output at each pixel (R, G, B) place, but when being provided with pixel W, export white light, because it does not need this color-filter layer from pixel W.
As shown in Figure 2, the first substrate 16 be made up as glass or plastics of transparent material is divided into R, G, B pixel, and is formed with thin-film transistor in each in R, G, B pixel.
Drive thin-film transistor can comprise the grid (11R, 11G, 11B) at pixel (R, G, B) place be respectively formed on first substrate 16, gate insulation layer 22 on first substrate 16, be formed with the semiconductor layer (12R, 12G, 12B) of the whole surface of first substrate 16 of grid (11R, 11G, 11B), and the source electrode (14R, 14G, 14B) be formed on semiconductor layer (12R, 12G, 12B) and drain (15R, 15G, 15B).Although not shown, the portion of upper surface of semiconductor layer (12R, 12G, 12B) is formed etching stopping layer with prevent source electrode (14R, 14G, 14B) and drain electrode (15R, 15G, 15B) etch process during etching semiconductor layer (12R, 12G, 12B).
Grid (11R, 11G, 11B) can by metal as Cr, Mo, Ta, Cu, Ti, Al or Al alloy be formed, and gate insulator 22 can be as SiO by inorganic material
2or SiN
xthe individual layer made or by SiO
2and SiN
xthe bilayer made.Semiconductor layer (12R, 12G, 12B) can be formed by amorphous semiconductor (a-Si), crystal semiconductor, transparent oxide semiconductor such as indium oxide gallium tin (IGZO) or organic semiconductor.In addition, source electrode (14R, 14G, 14B) and drain electrode (15R, 15G, 15B) can be formed by Cr, MoTa, Cu, Ti, Al or Al alloy.
First insulating barrier 24 can be formed in be formed drive thin-film transistor first substrate 16 on.First insulating barrier 24 can be about by thickness
inorganic material formed.R color-filter layer 17R, G color-filter layer 17G and B color-filter layer 17B is respectively formed in R, G, B pixel of the first insulating barrier 24.
Second insulating barrier 26 is formed on R color-filter layer 17R, G color-filter layer 17G and B color-filter layer 17B.As the external coating for planarization first substrate 16, the second insulating barrier 26 can by organic insulating material as light propylene be formed as the thickness of about 3 μm.
Light layer of compensation 27 is formed on the second insulating barrier 26.Light layer of compensation 27 allows the light entering into color-filter layer (17R, 17G, 17B) to be refracted to strengthen the viewing angle characteristic of light, and by depositing, refraction coefficient is 1.5-2.7, thickness is
siNx layer formed.Light layer of compensation 27 is not limited to SiNx layer, and any transparent material that can be 1.5-2.7 by refraction coefficient is formed.Such as, transparent indium tin oxide (ITO) or indium zinc oxide (IZO) can be used as light layer of compensation 27.Now, light layer of compensation 27 is formed in the whole surface of first substrate 10, and the ratio of components of preferred control ITO or IZO can minimize conductivity thus eliminate conductivity thus.
Now, light layer of compensation 27 is not hydrogeneous layers, such as, as use SiN
xwhen layer forms light layer of compensation 27, light layer of compensation 27 can be formed in the environment of not hydrogen, thus prevent from becoming bad because hydrogen penetrates into the thin-film transistor caused in the channel layer of thin-film transistor.
Pixel electrode (21R, 21G, 21B) is respectively formed in the pixel (R, G, B) on light layer of compensation 27.Now, the first insulating barrier 24 being formed at the drain electrode of the thin-film transistor in pixel (R, G, B) (15R, 15G, 15B) respectively and the second insulating barrier 26 are formed with contact hole 29, light layer of compensation 27 and pixel electrode (21R, 21G, 21B) are formed in (see 3D) on contact hole 29 thus, now, pixel electrode (21R, 21G, 21B) is electrically connected to exposure drain electrode (15R, 15G, 15B) of thin-film transistor respectively.
In addition, bank layer 28 is formed with in each pixel boundary region of the second insulating barrier 26.As a kind of partition wall, bank layer 28 is separated by each pixel to prevent the light mixing of the specific color exported from neighbor.In addition, bank layer 28 fills a part of contact hole 29 to reduce step, thus prevents from causing organic light-emitting units 23 to break down owing to crossing multi-step during formation organic light-emitting units 23.
Pixel electrode (21R, 21G, 21B) is by transparent metal oxide material as tin indium oxide (ITO) or indium zinc oxide (IZO) are made, and in the present invention, pixel electrode (21R, 21G, 21B) can be formed as about respectively in pixel (R, G, B)
thickness.
Pixel electrode (21R, 21G, 21B) directly contacts with light layer of compensation 27.Therefore, when light layer of compensation 27 is formed by ITO or IZO, the signal being applied to pixel electrode (21R, 21G, 21B) is applied by the whole surface spreading all over first substrate 10, thus, the conductivity of conductivity much smaller than ITO or IZO of formation pixel electrode (21R, 21G, 21B) of ITO or IZO of light layer of compensation 27 is formed.
Organic light-emitting units 23 can comprise the white organic light emitting layer for sending white light.White organic light emitting layer can be formed as making point to send the monochromatic multiple organic material of R, G, B and be mixed with each other, or it can be formed as making to send the monochromatic multiple luminescent layer of R, G, B respectively and is deposited on over each other.Although not shown, but organic light-emitting units 23 can be formed with organic luminous layer and be respectively used to inject electron injecting layer and the hole injection layer in electronics and hole, and be respectively used to transmit institute's injected electrons and hole to the electron transfer layer of organic luminous layer and hole transmission layer.
Public electrode 25 is formed in the whole surface of first substrate 16 on organic light-emitting units 23.Public electrode 25 is made up of Ca, Ba, Mg, Al, Ag etc.
Now, public electrode 25 is the negative electrode of organic light-emitting units 23 and pixel electrode (21R, 21G, 21B) be its anode, when voltage being applied to public electrode 25 and pixel electrode (21R, 21G, time 21B), electronics is injected in organic light-emitting units 23 from public electrode 25, hole is from pixel electrode (21R, 21G, 21B) be injected in organic light-emitting units 23 to produce exciton in organic luminous layer, along with exciton decay, create the light corresponding with the difference of the minimum molecular orbit (LUMO) that is not occupied and the highest molecular orbit (HOMO) be occupied, and this light is transmitted into outside (first substrate 16 towards in figure).Now, self-contained R, G, B luminescent layer in organic luminous layer sends ruddiness, green glow and blue light respectively, and the mixing of these light is to send white light.When penetrating color-filter layer (17R, 17G, 17B) respectively, the white light sent only exports the light of color corresponding to related pixel.
At public electrode 25 top coating adhesive to form adhesion layer 42, adhesion layer 42 arranges the second layer 50, by adhesion layer 42, the second layer 50 is bonded to first substrate 16 thus.
Any material with good adhesion and thermal conductive resin and water proofing property all can be used for adhesive, but in the present invention, it is that thermosetting resin is as epoxy resin based compound, acrylic compound or acrylic rubber.Now, the coating thickness of adhesion layer 42 is about 5-100 μm and the temperature-curable of about 80-170 degree Celsius.Adhesion layer 42 can make first substrate 16 and the second layer 50 combine, and plays and prevent moisture from penetrating into sealant effect in organic light emitting display inside.Therefore, in specific descriptions of the present invention, reference number 42 refers to adhesive, but this is only for facility, and adhesive also can be called sealant.
As the encapsulation caps of seal adhesion layer 42, the second layer 50 can be formed as diaphragm, such as polystyrene (PS) film, polyethylene (PE) film, polyethylene naphthalenedicarboxylate formaldehyde (PEN) film or polyimides (PI) film.In addition, the second layer 50 can be made up of plastics or glass, and any protection also can be used to be formed in the other materials of the aforementioned structure on first substrate 16.
Although not shown, but also can between first substrate 16 and the second layer 50, the perimeter of organic light emitting display forms auxiliary electrode, to provide common voltage to public electrode 25.
As mentioned above, light layer of compensation 27 is formed in compensate the white light incided from organic light-emitting units 23 in R, G, B color-filter layer (17R, 17G, 17B) below organic light-emitting units 23, thus strengthens viewing angle characteristic.
Now, light layer of compensation 27 is made up of not hydrogeneous layer, thus prevents because during forming light layer of compensation 27, hydrogen penetrates into the thin-film transistor caused in the channel layer of thin-film transistor and becomes bad.
Hereafter, will the method manufacturing and have the organic light emitting display of said structure be described as follows.
Fig. 3 A-3F illustrates the method figure of organic light emitting display constructed in accordance.
First, as shown in fig. 3, prepare the first substrate 16 be made up of the transparent material of such as glass or plastics, there is the opaque material of satisfactory electrical conductivity as Cr, Mo, Ta, Cu, Ti, Al or Al alloy by sputtering technology deposition afterwards, undertaken being etched with formation grid (11R, 11G, 11B) by photoetching process afterwards.
Afterwards, by chemical vapor deposition (CVD) technique, inorganic insulating material is deposited on the whole surface of first substrate 16 to form gate insulator 22.Now, for gate insulator 22, can form thickness is about
siN
xlayer.
Subsequently, by CVD process deposits semi-conducting material if amorphous silicon (a-Si), transparent oxide semiconductor are as indium oxide gallium zinc (IGZO) or organic semiconductor, it is etched with forms semiconductor layer (12R, 12G, 12B) afterwards.In addition, although not shown, but, can impurity is incorporated in the semiconductor layer (12R, 12G, 12B) of part or amorphous silicon that deposition with the addition of impurity to form ohmic contact layer.
Afterwards, by sputtering technology deposit on first substrate 16 there is satisfactory electrical conductivity opaque metal as Cr, Mo, Ta, Cu, Ti, Al or Al alloy, be etched with on semiconductor layer (12R, 12G, 12B) to it afterwards, strictly, be on ohmic contact layer, form source electrode (14R, 14G, 14B) and drain electrode (15R, 15G, 15B).
Afterwards, as shown in Figure 3 B, inorganic insulating material is deposited on the whole surface of the first substrate 16 being formed with source electrode (14R, 14G, 14B) and drain electrode (15R, 15G, 15B), to form the first insulating barrier 24.Now, for the first insulating barrier 24, can form thickness is about
siO
2layer.Subsequently, can respectively at R, G, B pixel being formed R color-filter layer 17R, G color-filter layer 17G and B color-filter layer 17B on the first insulating barrier 24.
Subsequently, as shown in FIG. 3 C, organic insulating material is formed with the whole surface of the first substrate 16 of R color-filter layer 17R, G color-filter layer 17G and B color-filter layer 17B as light propylene is coated in, to deposit the second insulating barrier 26, after etching first insulating barrier 24 and the second insulating barrier 26 see Fig. 3 D to form the contact hole 29(exposing the drain electrode (15R, 15G, 15B) of thin-film transistor).Now, the second insulating barrier 26 that thickness is about 3 μm can be formed.And, although the first insulating barrier 24 and the second insulating barrier 26 can be etched with the contact hole 29 in formation figure simultaneously, can etch the first insulating barrier 24 and after etching be formed in the first insulating barrier 24 by the second insulating barrier 26 on etching part to form contact hole 29.
Subsequently, the second insulating barrier 26 deposits such as SiN
xdeng material, it is etched with forms light layer of compensation 27 afterwards.Now, light layer of compensation 27 can be formed in the inside of contact hole 29, but its patterning can be exposed to outside to make drain electrode (15R, 15G, 15B).
Light layer of compensation 27 is formed by chemical vapor deposition (CVD) technique.In other words, provide to vacuum chamber and be mixed with SiH
4and N
2gas, perform CVD technique afterwards to form SiN
xlayer.
Certainly, SiN is formed
xlayer can use and be mixed with SiH
4and NH
3gas.But, in this case, during this technique, be included in NH
3in hydrogen trap in the channel layer of thin-film transistor.Hydrogen trap has impacted the channel layer of thin-film transistor, shows as the main cause that thin-film transistor becomes bad thus.
But, according to the present invention, use and be mixed with SiH
4and N
2gas formed SiN
x, hydrogen does not diffuse in the channel layer of thin-film transistor thus, thus prevents the thin-film transistor caused due to hydrogen to become bad.
On the other hand, according to the present invention, alternately provide and be mixed with SiH
4and NH
3gas and be mixed with SiH
4and N
2gas, perform CVD technique afterwards to form SiN
xlayer.As formation SiN
xduring layer, be mixed with SiH providing
4and NH
3gas to perform CVD technique when deposition velocity be mixed with SiH than alternately providing
4and N
2gas and be mixed with SiH
4and NH
3gas to perform CVD technique when deposition velocity fast.Therefore, according to the present invention, improve deposition velocity effectively to perform this technique and farthest reduce hydrogen content thus prevent thin-film transistor to become bad.
Subsequently, as shown in fig.3d, by transparent conductive material as ITO or IZO is deposited on light layer of compensation 27, it is etched with forms pixel electrode (21R, 21G, 21B) afterwards.Now, pixel electrode (21R, 21G, 21B) extends to the inside of contact hole 29 to be electrically connected to the drain electrode (15R, 15G, 15B) of thin-film transistor.In addition, the pixel electrode (21R, 21G, 21B) of related pixel and pixel electrode (21R, 21G, 21B) electric insulation of neighbor.
Afterwards, as indicated in figure 3e, between each pixel, bank layer 28 is formed.Bank layer 28 separates each pixel to prevent the light mixing of the specific color exported from neighbor, and is filled with a part of contact hole 29 to reduce step.Form bank layer 28 by using CVD process deposits and etching inorganic insulating material or afterwards bank layer 28 is formed to its etching by deposition organic insulating material.
Subsequently, organic light-emitting units 23 is formed in the whole surface of the first substrate 16 being formed with bank layer 28 and pixel electrode (21R, 21G, 21B).Organic light-emitting units 23 is made up of electron injecting layer, electron transfer layer, white-light organic light-emitting layer, hole transmission layer and hole injection layer, and white-light organic light-emitting layer can be the layer being mixed with R luminous organic material, G luminous organic material and B luminous organic material, or it deposited the structure of R organic luminous layer, G organic luminous layer and B organic luminous layer.Electron injecting layer, electron transfer layer, organic luminous layer, hole transmission layer and hole injection layer is formed by depositing the various material of use at present.
Afterwards, on organic light-emitting units 23 plated metal if Ca, Ba, Mg, Al, Ag etc. are to form public electrode 25.
Subsequently, as shown in fig.3f, the adhesion layer 42 be made up as epoxy compounds, acrylic compound or acrylic rubber of thermosetting resin is formed in the whole surface of second substrate 50, thickness is about 5-100 μm, afterwards under the state that second substrate 50 is positioned on first substrate 16, pressure is applied to first substrate 10 and second substrate 50, so that first substrate 10 is attached to second substrate 50.
Now, coating or deposit adhesion agent or adhesive film on first substrate 16, be positioned at second substrate 50 on first substrate 16 afterwards to make the two combine.
Second substrate 50 can be made up of plastics or glass, or is formed with diaphragm as polystyrene (PS) film, polyethylene (PE) film, polyethylene naphthalenedicarboxylate formaldehyde (PEN) film, polyimides (PI) film etc.
As mentioned above, together with first substrate 16 is incorporated into second substrate 50, at the temperature of about 80-170 degree Celsius, heat adhesion layer 42 afterwards to solidify adhesion layer 42.Seal organic light emitting display by the solidification of adhesion layer 42, thus prevent moisture to be diffused into organic luminescent device from outside.In addition, second substrate 50 is used as sealing cap and protects organic light emitting display to seal organic light emitting display.
As mentioned above, according to the present invention, light layer of compensation 27 is formed in reflect the light that selfluminous cell 23 sends below luminescence unit 23, thus strengthens the look viewing angle characteristic through the light of color-filter layer (17R, 17G, 17B).Now, according to the present invention, SiN
xfor light layer of compensation 27, and SiN
xsiH can be mixed with
4and N
2gaseous environment in formed, instead of be mixed with SiH
4and NH
3gaseous environment in, thus effectively prevent the thin-film transistor owing to causing in hydrogen trap to thin-film transistor become bad.
Fig. 4 illustrates the sectional view of organic light emitting display structure according to a second embodiment of the present invention.Now, the structural similarity of the structure of the second embodiment and the first embodiment shown in Fig. 2, therefore, briefly will describe same structure, and only will describe different structure in detail.
As shown in Figure 4, the driving thin-film transistor being formed in pixel (R, G, B) place on first substrate 116 can comprise the grid (111R, 111G, 111B) being respectively formed at pixel (R, G, B) place on first substrate 116, be formed in the semiconductor layer (112R, 112G, 112B) on grid (111R, 111G, 111B), and the source electrode (114R, 114G, 114B) be formed on semiconductor layer (112R, 112G, 112B) and drain electrode (115R, 115G, 115B).
First insulating barrier 124 can be formed in be formed drive thin-film transistor first substrate 116 on.First insulating barrier 124 can be formed by inorganic material, and thickness is about
r color-filter layer 117R, G color-filter layer 117G and B color-filter layer 117B is respectively formed in R, G, B pixel of the first insulating barrier 124.
Light layer of compensation 127 is formed on the second insulating barrier 126.The material of light layer of compensation 127 to be refraction coefficients be 1.5-2.7, and such as SiN
x, ITO or IZO transparent material can be used for light layer of compensation 127.Now, light layer of compensation 127 is not hydrogeneous layers, and when forming SiN
xwhen layer waits, light layer of compensation 127 can be formed in not hydrogeneous environment, thus prevent the thin-film transistor owing to causing in hydrogen trap to the channel layer of thin-film transistor from becoming bad.In this embodiment, light layer of compensation 127 also can contain hydrogen.
Light layer of compensation 127 is formed multiple hole 127a.Hole 127a can be formed in the outer wall of each pixel region.Hole 127a discharges the foreign substance produced from the second insulating barrier 126 or another layer.Although will details be described after a while, but, form organic luminous layer on the top of light layer of compensation 127, perform vacuum solidification technique and expose predetermined period of time to allow lower layer, thus before formation organic luminous layer, remove the foreign substance from the layer being formed in organic luminous layer bottom.The foreign substance produced from the second insulating barrier 126 etc. during vacuum solidification technique should be discharged into outside with gas phase, but when forming light layer of compensation 127, can not discharge this foreign substance, thus causing trouble.
According to the present invention, hole 127a is formed on light layer of compensation 127, thus allows the foreign substance passing hole 127a produced during vacuum solidification technique to be released.Now, at the whole surface formation hole 127a of light layer of compensation 127 or only can form hole 127a in the region of the light layer of compensation 127 corresponding with R, G, B pixel, or can regularly or irregular mode formed hole 127a.
Pixel electrode (121R, 121G, 121B) is respectively formed in the pixel (R, G, B) of light layer of compensation 127.Now, contact hole 129 is formed in and is formed on thin-film transistor drain electrode first insulating barrier 124 of (115R, 115G, 115B) in pixel (R, G, B) and the second insulating barrier 126 respectively, light layer of compensation 127 and pixel electrode (121R, 121G, 121B) are formed in (see Fig. 5 D) on contact hole 129 thus, now, pixel electrode (121R, 121G, 121B) is electrically connected to the drain electrode (115R, 115G, 115B) that thin-film transistor exposes respectively.
In addition, bank layer 128 is formed in each pixel boundary region place on the second insulating barrier 126, and the organic light-emitting units 123 for emitting white light is formed in light layer of compensation 127 and bank layer 128.Public electrode 125 is formed in the whole surface of the first substrate 116 on organic light-emitting units 123.
Public electrode 125 top adhesive coated with formation adhesion layer 142, adhesion layer 142 deposits second substrate 150, by adhesion layer 142, second substrate 150 is bonded to first substrate 116 thus.
Fig. 5 A-5F illustrates the method figure of manufacture organic light emitting display according to a second embodiment of the present invention.
First, as shown in Figure 5 A, prepare first substrate 116, be there is by sputtering technology deposition the opaque material of satisfactory electrical conductivity afterwards, undertaken being etched with formation grid (111R, 111G, 111B) by photoetching process afterwards.
Afterwards, by chemical vapor deposition (CVD) technique, inorganic insulating material is deposited on the whole surface of first substrate 116 to form gate insulator 122, pass through CVD process deposits semi-conducting material afterwards if amorphous silicon (a-Si), transparent oxide semiconductor are as indium oxide gallium zinc (IGZO) or organic semiconductor, it is etched with forms semiconductor layer (112R, 112G, 112B) afterwards.And, although not shown, impurity can be incorporated in the semiconductor layer (112R, 112G, 112B) of part or amorphous silicon that deposition with the addition of impurity to form ohmic contact layer.
Afterwards, on first substrate 116, the opaque metal with satisfactory electrical conductivity is deposited by sputtering technology, be etched with on semiconductor layer (112R, 112G, 112B) to it afterwards, strictly, be on ohmic contact layer, form source electrode (114R, 114G, 114B) and drain electrode (115R, 115G, 115B).
Afterwards, as shown in Figure 5 B, inorganic insulating material is deposited on the whole surface of the first substrate 116 being formed with source electrode (114R, 114G, 114B) and drain electrode (115R, 115G, 115B), to form the first insulating barrier 124, afterwards, can respectively at R, G, B pixel being formed R color-filter layer 117R, G color-filter layer 117G and B color-filter layer 117B on the first insulating barrier 124.
Subsequently, as shown in Figure 5 C, second insulating barrier 126 is deposited on the whole surface of the first substrate 116 being formed with R color-filter layer 117R, G color-filter layer 117G and B color-filter layer 117B, after etching first insulating barrier 124 and the second insulating barrier 126 expose the contact hole 129 of the drain electrode (115R, 115G, 115B) of thin-film transistor to be formed.Now, although etch the first insulating barrier 124 and the second insulating barrier 126 with the contact hole 129 in formation figure simultaneously, but the first insulating barrier 124 can be formed and form contact hole, form the second insulating barrier 126 afterwards, after etching second insulating barrier 126 to form contact hole, thus be formed on the first insulating barrier 124 and the second insulating barrier 126 formed contact hole 129.
Subsequently, the second insulating barrier 126 deposits such as SiN
xdeng material, it is etched with forms light layer of compensation 127 afterwards, on light layer of compensation 127, form multiple hole 127a afterwards.Now, hole 127a is only formed in the region corresponding with R, G, B pixel in figure, but it also can be formed in the whole surface of light layer of compensation 127.
Light layer of compensation 127 is formed by CVD technique.In other words, provide in vacuum chamber and be mixed with SiH
4and NH
3gas, perform CVD technique afterwards to form SiN
xlayer, or provide and be mixed with SiH
4and N
2gas, perform CVD technique afterwards to form SiN
xlayer.Or, alternately provide and be mixed with SiH
4and N
2gas and be mixed with SiH
4and N
2gas, perform CVD technique afterwards to form SiN
xlayer.
Subsequently, as shown in fig. 5d, by transparent conductive material as ITO or IZO deposits on light layer of compensation 127, it is etched with forms pixel electrode (121R, 121G, 121B) afterwards.
Afterwards, as shown in fig. 5e, bank layer 128 is formed between each pixel, forms organic light-emitting units 123 in the whole surface of the first substrate 116 being formed with bank layer 128 and pixel electrode (121R, 121G, 121B) afterwards.Organic light-emitting units 23 comprises electron injecting layer, electron transfer layer, white-light organic light-emitting layer, hole transmission layer and hole injection layer, white-light organic light-emitting layer can be the layer being mixed with R luminous organic material, G luminous organic material and B luminous organic material, or it deposited the structure of R organic luminous layer, G organic luminous layer and B organic luminous layer.Various materials by depositing current use form electron injecting layer, electron transfer layer, organic luminous layer, hole transmission layer and hole injection layer.
Although not shown, after formation bank layer 128 and before forming organic light-emitting units 123, the layer manufactured by exposing under vacuum conditions reaches predetermined period of time, to perform vacuum solidification.
Afterwards, on organic light-emitting units 123 plated metal if Ca, Ba, Mg, Al, Ag etc. are to form public electrode 125.
Subsequently, as as shown in Fig. 5 F, form adhesion layer 142 in the whole surface of second substrate 150, under the state being positioned at first substrate 116 at second substrate 150 afterwards, pressure is applied to first substrate 116 and second substrate 150 so that first substrate 116 is attached to second substrate.Now, adhesive or adhesive film are applied or deposit on first substrate 116, afterwards second substrate 150 is arranged thereon both to be combined.
As mentioned above, first substrate 116 and second substrate 150 being combined, afterwards by being heating and curing adhesion layer 140 at the temperature of about 80-170 degree Celsius, thus completing organic light emitting display.
Disclosed there is concrete structure organic light emitting display as the organic light emitting display in aforementioned specific descriptions, but the invention is not restricted to the organic light emitting display with this concrete structure.
Such as, in the foregoing written description, organic luminescence display unit comprises electron injecting layer, electron transfer layer, organic luminous layer, hole transmission layer and hole injection layer, but can form the organic light-emitting units only with organic luminous layer or form the organic light-emitting units only with electron injecting layer and organic luminous layer.In addition, the organic light-emitting units only with organic luminous layer and hole injection layer can be formed, and also can obtain other various structures.
In other words, if a kind of structure makes hydrogen content minimum, such as, define light layer of compensation, the multiple holes (as main points of the present invention) etc. on light layer of compensation, it can be applicable to all types organic light emitting display with well-known structure.
Claims (15)
1. an organic light emitting display, comprising:
Comprise first substrate and the second substrate of multiple pixel;
Form thin-film transistor on the first substrate;
Be formed in the first insulating barrier comprised on the first substrate of thin-film transistor;
Be formed in the color-filter layer on the first insulating barrier in pixel region;
Be formed in the second insulating barrier comprised on the first substrate of color-filter layer;
Form the light layer of compensation made over the second dielectric and by not hydrogeneous material, the wherein drain bonding pad of light layer of compensation contact membrane transistor;
Be formed in the pixel electrode on the light layer of compensation of each pixel region;
Formed on the pixel electrode with the organic light-emitting units of luminescence; With
Be formed in the public electrode on organic light-emitting units,
Wherein said smooth layer of compensation be by the material of the refraction coefficient with 1.5-2.7 make to make the anaclasis from color-filter layer.
2. organic light emitting display as claimed in claim 1, also comprises:
Be formed in the multiple holes on light layer of compensation, expose the second insulating barrier to discharge foreign substance by described hole, its mesopore is formed in the outer wall of each pixel region.
3. organic light emitting display as claimed in claim 2, wherein light layer of compensation is made up of transparent material.
4. organic light emitting display as claimed in claim 3, wherein light layer of compensation is by being selected from SiN
x, ITO and IZO composition group material formed.
5. organic light emitting display, wherein SiN as claimed in claim 4
xdeposit thickness be
6. organic light emitting display as claimed in claim 5, wherein multiple hole is formed in the region corresponding with colour filter.
7. organic light emitting display as claimed in claim 5, wherein multiple hole is formed in the region corresponding with colour filter and in color filter regions.
8. manufacture a method for organic light emitting display, the method comprises:
The first substrate and second substrate that comprise multiple pixel are provided;
Thin-film transistor is formed at each pixel place of first substrate;
The first substrate comprising thin-film transistor is formed the first insulating barrier;
On the first insulating barrier, color-filter layer is formed in pixel region;
The first substrate comprising color-filter layer is formed the second insulating barrier;
Be mixed with SiH
4and N
2gaseous environment in, formed over the second dielectric by SiN
xthat make, that there is 1.5-2.7 refraction coefficient and the light layer of compensation be made up of not hydrogeneous material, wherein light layer of compensation contact membrane transistor drain weld pad make the anaclasis from color-filter layer;
The light layer of compensation of each pixel region forms pixel electrode;
Light layer of compensation is formed and is used for luminous organic light-emitting units;
Organic light-emitting units forms public electrode; With
First substrate is attached to second substrate.
9. method as claimed in claim 8, also comprises:
Etching light layer of compensation, to be formed in the multiple holes formed in the outer wall of each pixel region, exposes the second insulating barrier by described hole.
10. method, wherein SiN as claimed in claim 9
xthere is light transmission.
11. methods as claimed in claim 10, also comprise:
Be mixed with SiH
4and NH
3gaseous environment in form SiN
xlayer, is wherein mixed with SiH by replacing change
4and N
2gaseous environment and be mixed with SiH
4and NH
3gaseous environment form SiN
x.
12. methods as claimed in claim 11, wherein also comprise:
Under vacuum conditions, vacuum solidification is performed to the layer formed after formation pixel electrode and reach predetermined period of time, to discharge the foreign substance be included in formed layer via hole.
13. methods as claimed in claim 8, wherein
Light layer of compensation is made up of transparent material.
14. methods as claimed in claim 8, wherein light layer of compensation is by being selected from SiN
x, ITO and IZO composition group material formed.
15. methods as claimed in claim 8, wherein also comprise:
Under vacuum conditions, vacuum solidification is performed to the layer formed after formation pixel electrode and reach predetermined period of time, to discharge the foreign substance be included in formed layer via hole.
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| KR1020110134862A KR101339000B1 (en) | 2011-12-14 | 2011-12-14 | Organic light emitting display device and method of fabricating thereof |
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| CN103165650B true CN103165650B (en) | 2016-04-20 |
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|---|---|
| US (1) | US8921837B2 (en) |
| JP (2) | JP2013125746A (en) |
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Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140074674A (en) * | 2012-12-10 | 2014-06-18 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus and the manufacturing method thereof |
| JP2016122672A (en) | 2013-03-18 | 2016-07-07 | 出光興産株式会社 | Light emitting device |
| KR102086393B1 (en) * | 2013-11-21 | 2020-03-10 | 엘지디스플레이 주식회사 | Organic light emitting display device and method for manufacturing thereof |
| KR102112649B1 (en) * | 2013-11-25 | 2020-05-19 | 엘지디스플레이 주식회사 | Organic electro luminescent device and repair method of the same |
| CN104733491B (en) * | 2013-12-20 | 2017-12-15 | 昆山国显光电有限公司 | A kind of organic light-emitting display device and preparation method thereof |
| KR102395211B1 (en) * | 2013-12-27 | 2022-05-10 | 엘지디스플레이 주식회사 | Organic light emitting display device and manufacturing method of the same |
| JP2015146304A (en) * | 2014-02-04 | 2015-08-13 | ソニー株式会社 | Display device and electronic apparatus |
| JP6220300B2 (en) * | 2014-03-20 | 2017-10-25 | 株式会社ジャパンディスプレイ | Method for manufacturing organic electroluminescent display device and organic electroluminescent display device |
| CN103996696A (en) * | 2014-05-09 | 2014-08-20 | 京东方科技集团股份有限公司 | OLED display panel, manufacturing method of OLED display panel and display device |
| KR102173510B1 (en) * | 2014-05-20 | 2020-11-04 | 엘지디스플레이 주식회사 | Organic light emitting device |
| KR102213114B1 (en) * | 2014-09-29 | 2021-02-04 | 엘지디스플레이 주식회사 | Transparent display panel and manufacturing method of the same |
| CN104465672B (en) * | 2014-12-26 | 2018-01-26 | 京东方科技集团股份有限公司 | Array base palte and display device |
| CN104485351A (en) * | 2014-12-31 | 2015-04-01 | 深圳市华星光电技术有限公司 | Flexible organic light-emitting display and manufacturing method thereof |
| JP6707348B2 (en) * | 2015-01-09 | 2020-06-10 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | Photosensitive resin composition, color conversion panel and display device using the same |
| KR102419033B1 (en) * | 2015-12-28 | 2022-07-08 | 엘지디스플레이 주식회사 | Organic lighe emitting display panel and organic lighe emitting display device comprising the same |
| KR102642198B1 (en) * | 2016-04-04 | 2024-03-05 | 삼성디스플레이 주식회사 | Organic light-emitting display apparatus |
| KR20180059280A (en) | 2016-11-25 | 2018-06-04 | 엘지디스플레이 주식회사 | Display device |
| KR102437180B1 (en) * | 2017-12-06 | 2022-08-26 | 엘지디스플레이 주식회사 | Transparent Organic Light Emitting Diode Display |
| CN108649132B (en) * | 2018-05-16 | 2020-05-01 | 云谷（固安）科技有限公司 | Organic light emitting display device |
| KR102570979B1 (en) * | 2018-06-26 | 2023-08-25 | 엘지디스플레이 주식회사 | White Organic Light Emitting Device And Display Device Using the Same |
| KR102554830B1 (en) | 2018-10-04 | 2023-07-13 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
| CN110071165B (en) * | 2019-05-14 | 2022-05-13 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display panel |
| US11094752B2 (en) | 2019-05-24 | 2021-08-17 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and preparation method thereof |
| CN110164932A (en) * | 2019-05-24 | 2019-08-23 | 深圳市华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof |
| WO2022215712A1 (en) | 2021-04-09 | 2022-10-13 | 三菱ケミカル株式会社 | Photosensitive colored resin composition, cured product, partition wall, organic electroluminescent element, image display device and compound |
| JP2023094232A (en) * | 2021-12-23 | 2023-07-05 | 株式会社ジャパンディスプレイ | Display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1278660A (en) * | 1999-06-04 | 2001-01-03 | 株式会社半导体能源研究所 | Photoelectric apparatus and electronic apparatus |
| CN1638555A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Organic electroluminescent display device and method of fabricating the same |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62170190A (en) * | 1986-01-21 | 1987-07-27 | シャープ株式会社 | Manufacture of thin film light emitting device |
| JP4730994B2 (en) * | 1999-06-04 | 2011-07-20 | 株式会社半導体エネルギー研究所 | Electro-optical device, manufacturing method thereof, and electronic device |
| JP4101511B2 (en) * | 2001-12-27 | 2008-06-18 | 株式会社半導体エネルギー研究所 | Light emitting device and manufacturing method thereof |
| TWI272556B (en) * | 2002-05-13 | 2007-02-01 | Semiconductor Energy Lab | Display device |
| JP3724733B2 (en) * | 2002-06-25 | 2005-12-07 | 富士電機ホールディングス株式会社 | ORGANIC EL LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF |
| JP3690373B2 (en) * | 2002-06-27 | 2005-08-31 | 富士電機ホールディングス株式会社 | Organic EL display and manufacturing method thereof |
| JP4716699B2 (en) * | 2003-09-30 | 2011-07-06 | 三洋電機株式会社 | Organic EL panel |
| JP2005200680A (en) * | 2004-01-13 | 2005-07-28 | Serubakku:Kk | Cvd system |
| KR20070054806A (en) * | 2005-11-24 | 2007-05-30 | 삼성전자주식회사 | Organic light emitting diode display |
| JP4655942B2 (en) * | 2006-01-16 | 2011-03-23 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
| KR101251349B1 (en) * | 2006-08-18 | 2013-04-05 | 삼성디스플레이 주식회사 | Thin film trnasistor array panel, manufacturing method thereof and display apparatus having the same |
| JP2009031393A (en) * | 2007-07-25 | 2009-02-12 | Seiko Epson Corp | Electronic device and optical resonator |
| EP2346020A4 (en) * | 2008-10-02 | 2014-12-31 | Sharp Kk | Display device substrate, display device substrate manufacturing method, display device, liquid crystal display (lcd) device, lcd manufacturing method, and organic electroluminescence display device |
| JP2010218718A (en) * | 2009-03-13 | 2010-09-30 | Seiko Epson Corp | Display and electronic equipment |
| KR101707433B1 (en) * | 2009-09-04 | 2017-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device and method for manufacturing the same |
-
2011
- 2011-12-14 KR KR1020110134862A patent/KR101339000B1/en active IP Right Grant
-
2012
- 2012-10-29 JP JP2012237516A patent/JP2013125746A/en active Pending
- 2012-12-05 US US13/706,216 patent/US8921837B2/en active Active
- 2012-12-14 CN CN201210545120.0A patent/CN103165650B/en active Active
-
2016
- 2016-06-22 JP JP2016123181A patent/JP6490623B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1278660A (en) * | 1999-06-04 | 2001-01-03 | 株式会社半导体能源研究所 | Photoelectric apparatus and electronic apparatus |
| CN1638555A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Organic electroluminescent display device and method of fabricating the same |
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|---|---|
| KR20130068200A (en) | 2013-06-26 |
| US20130153870A1 (en) | 2013-06-20 |
| JP2016171088A (en) | 2016-09-23 |
| JP6490623B2 (en) | 2019-03-27 |
| CN103165650A (en) | 2013-06-19 |
| JP2013125746A (en) | 2013-06-24 |
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| US8921837B2 (en) | 2014-12-30 |
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