KR102086393B1 - Organic light emitting display device and method for manufacturing thereof - Google Patents

Abstract

The present invention provides an organic light emitting display device and a method of manufacturing the organic light emitting display device which can prevent a characteristic change of a thin film transistor due to hydrogen infiltration. The organic light emitting display device according to the present invention comprises: a thin film transistor formed on a substrate; A passivation layer covering the thin film transistor; A first electrode connected to the thin film transistor through the passivation layer; An organic light emitting element formed on the first electrode; A second electrode connected to the organic light emitting element; And a hydrogen storage layer formed on the substrate to at least partially overlap the thin film transistor to absorb and store hydrogen generated in at least one of the thin film transistor and the passivation layer.

Description

Organic light-emitting display device and method for manufacturing same {ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device and a method of manufacturing the same, which can prevent changes in characteristics of a thin film transistor.

Recently, the importance of the display device has increased with the development of multimedia. In response to this, flat panel displays such as liquid crystal displays, plasma displays, and organic light emitting displays have been commercialized. Among the flat panel display devices, the liquid crystal display and the organic light emitting display are thinner, lighter, and have lower power consumption. Therefore, notebook computers, televisions, tablet computers, monitors, smart phones, portable display devices, portable information devices, etc. It is widely used as a display device.

The organic light emitting diode display has a structure in which a light emitting layer is formed between a cathode for injecting electrons and an anode for injecting holes, and electrons generated in the cathode and holes generated in the anode are light emitting layers. When injected into the inside, the injected electrons and holes combine to generate an exciton, and the generated exciton falls from the excited state to the ground state, causing light emission to display an image. do.

1 is a view schematically illustrating a general organic light emitting display device.

Referring to FIG. 1, a general organic light emitting diode display includes a substrate 10, a pixel array unit 20, an organic light emitting diode OLED, and an encapsulation member 30.

The substrate 10 may be made of glass or plastic material.

The pixel array unit 20 is a thin film transistor connected to a plurality of gate lines and a plurality of data lines formed on the substrate 10 to cross each other, a passivation layer covering the thin film transistor, and a passivation layer connected to the thin film transistor. And a pixel electrode.

The organic light emitting diode OLED includes an organic light emitting layer formed on a pixel electrode, and a cathode electrode formed on the organic light emitting layer. The organic light emitting diode OLED emits light by data current supplied from the thin film transistor.

The encapsulation member includes an encapsulation substrate or an encapsulation layer to encapsulate the organic light emitting diode OLED to protect the organic light emitting diode OLED from moisture or oxygen.

Such a conventional organic light emitting diode display has a problem that characteristics of the thin film transistor are changed due to hydrogen (H) generated in a thin film (for example, a gate insulating film) or a passivation layer constituting the thin film transistor or penetrating in an external environment. have. That is, the hydrogen (H) is very small and light and can penetrate into the thin film transistor from the external environment, or can be generated from the thin film constituting the thin film transistor and penetrate into the active layer (or semiconductor layer) of the thin film transistor.

Therefore, in the conventional organic light emitting diode display, the threshold voltage characteristic of the thin film transistor is changed due to hydrogen penetration into the active layer (or semiconductor layer) of the thin film transistor, and furthermore, the organic light emitting diode is caused by hydrogen penetration into the organic light emitting diode (OLED). (OLED) will be degraded.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and an object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which can prevent a change in characteristics of a thin film transistor due to hydrogen penetration.

In addition to the technical task of the present invention mentioned above, other features and advantages of the present invention will be described below, or from such description and description will be clearly understood by those skilled in the art.

In accordance with another aspect of the present invention, an organic light emitting diode display includes: a thin film transistor formed on a substrate; A passivation layer covering the thin film transistor; A first electrode connected to the thin film transistor through the passivation layer; An organic light emitting element formed on the first electrode; A second electrode connected to the organic light emitting element; And a hydrogen storage layer formed on the substrate to at least partially overlap the thin film transistor to absorb and store hydrogen generated in at least one of the thin film transistor and the passivation layer.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method including: forming a thin film transistor on a substrate; Forming a passivation layer covering the thin film transistor; Forming a first electrode penetrating the passivation layer and connected to the thin film transistor; Forming an organic light emitting element on the first electrode; Forming a second electrode connected to the organic light emitting element; And forming a hydrogen storage layer on the substrate at least partially overlapping the thin film transistor for absorbing and storing hydrogen generated in at least one of the thin film transistor and the passivation layer.

The method of manufacturing the organic light emitting display device may include forming a passivation layer on the second electrode; And forming a sealing member on the protective film, wherein the substrate has a plurality of pixel areas including a pixel circuit area and an opening area, and the hydrogen storage layer is formed on an upper surface of the protective film or the protective film. It may be formed on the lower surface of the sealing member facing the.

According to the above solution, the present invention absorbs and stores hydrogen in the hydrogen storage layer formed to overlap the thin film transistor, thereby preventing changes in characteristics of the thin film transistor and / or the organic light emitting device due to hydrogen penetration.

1 is a view schematically illustrating a general organic light emitting display device.
2 is a cross-sectional view for describing an organic light emitting diode display according to a first exemplary embodiment of the present invention.
3 is a cross-sectional view for describing an organic light emitting diode display according to a second exemplary embodiment of the present invention.
4 is a cross-sectional view for describing an organic light emitting diode display according to a third exemplary embodiment of the present invention.
5 and 6 are cross-sectional views for describing a modified embodiment of the organic light emitting diode display according to the third embodiment of the present invention.
7A to 7F are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a first embodiment of the present invention.
8A to 8E are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention.
9A to 9C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a third embodiment of the present invention.
10A and 10B are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a fourth embodiment of the present invention.

The meaning of the terms described herein will be understood as follows.

Singular expressions should be understood to include plural expressions unless the context clearly indicates otherwise, and the terms “first”, “second”, and the like are intended to distinguish one component from another. The scope of the rights shall not be limited by these terms.

It is to be understood that the term "comprises" or "having" does not preclude the existence or addition of one or more other features or numbers, steps, operations, components, parts or combinations thereof.

The term "at least one" should be understood to include all combinations which can be presented from one or more related items. For example, the meaning of "at least one of the first item, the second item, and the third item" means two items of the first item, the second item, or the third item, as well as two of the first item, the second item, and the third item, respectively. A combination of all items that can be presented from more than one.

The term " on " means to include not only when a configuration is formed directly on top of another configuration but also when a third configuration is interposed between these configurations.

Hereinafter, exemplary embodiments of an organic light emitting diode display and a method of manufacturing the same will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view for describing an organic light emitting diode display according to a first exemplary embodiment of the present invention.

Referring to FIG. 2, the organic light emitting diode display according to the first exemplary embodiment has a top emission structure, and includes the thin film transistor 110 and the thin film transistor 110 formed on the substrate 100. ), An passivation layer 120 covering the passivation layer 120, an anode electrode (or first electrode) 130 connected to the thin film transistor 110, and an organic light emitting element formed on the anode electrode 130. 140, a cathode electrode (or second electrode) 150 connected to the organic light emitting element 140, and a hydrogen storage layer HSL formed on the substrate 100 to overlap the thin film transistor 110. It is composed.

The substrate 100 is mainly glass, but a transparent plastic that can be bent or bent, such as polyimide, may be used. When using a polyimide as a material of the substrate 100, in consideration of the high temperature deposition process is performed on the substrate 100, a polyimide excellent in heat resistance that can withstand high temperatures may be used.

The thin film transistor 110 is formed in the pixel circuit region of each pixel region P1, P2, and P3 defined in the substrate 100. The thin film transistor 110 includes a gate electrode GE, a gate insulating layer 111, an active layer AL, an etch stopper layer ESL, a drain electrode DE, and a source electrode SE.

The gate electrode GE is patterned on the substrate 100. The gate electrode GE may be made of Mo, Al, Cr, Cu, or an alloy thereof, and may be made of a single layer or two or more layers of the metal or alloy.

The gate insulating layer 111 is formed on the substrate 100 to cover the gate electrode GE to insulate the gate electrode GE from the active layer AL. The gate insulating layer 111 may be made of an inorganic insulating material such as silicon oxide or silicon nitride, but is not limited thereto. The gate insulating layer 111 may be made of an organic insulating material such as photoacryl or benzocyclobutene (BCB). It may be.

The active layer AL is patterned on the gate insulating layer 111 so as to overlap the gate electrode GE. The active layer 116 may be formed of an oxide semiconductor such as In—Ga—Zn—O (IGZO), but is not necessarily limited thereto, and may be formed of a silicon-based semiconductor.

The etch stopper layer ESL is patterned on the active layer AL except for one side and the other side of the active layer AL. The etch stopper layer ESL may prevent the channel region of the active layer AL from being etched during an etching process for patterning the source electrode SE and the drain electrode DE. The etch stopper layer ESL may be made of an inorganic insulating material such as silicon oxide or silicon nitride, but is not necessarily limited thereto. The etch stopper layer ESL may be omitted depending on the structure of the thin film transistor.

The drain electrode DE and the source electrode SE face each other and are patterned on the etch stopper layer ESL, the active layer AL, and the gate insulating layer 111.

The drain electrode DE extends in one direction of the active layer ESL from the etch stopper layer ESL and is connected to the drain region of the active layer AL. The source electrode SE extends from the etch stopper layer ESL to the other side of the active layer AL and is connected to the source region of the active layer AL. The drain electrode DE and the source electrode SE may be made of Mo, Al, Cr, Cu, or an alloy thereof, and may be made of a single layer or two or more layers of the metal or alloy.

The passivation layer 120 is formed on the substrate 100 to cover the thin film transistor 110 and the gate insulating layer 111. The passivation layer 120 may be made of an inorganic insulating material such as silicon oxide or silicon nitride, but is not limited thereto, and may be made of an organic insulating material such as photo acryl or benzocyclobutene (BCB). It may be.

The anode electrode 130 is patterned in the opening regions of the pixel regions P1, P2, and P3 defined in the substrate 100 to cover the thin film transistor 110, and is formed in the passivation layer 120. It is connected to the source electrode SE (or drain electrode DE) of the thin film transistor 110 through the contact hole CH. The anode electrode 130 may be formed of a single layer of a reflective material, or may be formed of two or more layers including a transparent conductive material layer and a reflective material layer. Herein, the transparent conductive material layer may be ITO, IZO, ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, or In ₂ O ₃ , and the reflective material may be Ag, Al, Mg, Mg. : Ag, LiF: Al, or a compound thereof.

The organic light emitting element 140 is formed in an opening region of each pixel region P1, P2, P3 on the anode electrode 130 defined by the bank layer 135 formed on the passivation layer 120. . Although not illustrated, the organic light emitting diode 140 may have a structure in which a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer are sequentially stacked. However, one or more layers of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be omitted. The organic emission layer may be formed to emit light of the same color, for example, white, for each pixel, or may be formed to emit light of a different color, for example, red, green, or blue, for each pixel.

The bank layer 135 is formed on the passivation layer 120 to cover the edge portion of the anode electrode 128 to define an opening region of each pixel region P1, P2, and P3. The bank layer 135 may be formed of an organic insulating material, for example, polyimide, photo acryl, or benzocyclobutene (BCB), but is not limited thereto.

The cathode electrode 150 is formed on the substrate 100 to cover the organic light emitting element 140 and the bank layer 135. The cathode electrode 150 is not divided for each pixel region P1, P2, or P3, and is formed in an electrode shape common to all pixels, and thus the organic light emitting diode is formed in the opening region of each pixel region P1, P2, or P3. It is commonly connected to the device 140. That is, the cathode electrode 150 may be formed on the bank layer 135 as well as the organic light emitting element 140. The cathode electrode 150 is formed of a transparent conductive material such as ITO, IZO, ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, or In ₂ O ₃ .

In addition, the organic light emitting diode display according to the first exemplary embodiment of the present invention further includes color filter layers 160R, 160G, and 160B when the organic light emitting diode 140 emits white light. Can be configured.

The color filter layers 160R, 160G, and 160B are patterned on the cathode electrode 150 corresponding to the opening areas of the pixel areas P1, P2, and P3. In this case, the color filter layers 160R, 160G, and 160B may be formed of color filters of red, green, and blue corresponding to the pixel areas P1, P2, and P3. Accordingly, the color filter layers 160R, 160G, and 160B filter the white light emitted from the organic light emitting element 140 of each pixel region P1, P2, and P3 into red, green, and blue light.

A first insulating film 161 is interposed between the color filter layers 160R, 160G and 160B and the cathode electrode 150, and the color filter layers 160R, 160G and 160B are covered by the second insulating film 163. All. In addition, a capping layer 170 may be further formed on the second insulating layer 163.

The capping layer 170 increases the light extraction effect and protects the organic light emitting device 140 from external oxygen and moisture. The capping layer 170 may be formed of any one of a material forming a hole transport layer, an electron transporting layer, and a host material of the organic light emitting layer included in the organic light emitting diode. The capping layer 170 may be formed instead of the second insulating layer 163 or may be omitted.

The hydrogen storage layer HSL penetrates in an external environment or absorbs and generates hydrogen generated in at least one of the thin film transistor 110, that is, the gate insulating layer 111 and the passivation layer 120, thereby transferring and penetrating hydrogen. Due to the characteristic change of the thin film transistor 110 and / or the organic light emitting device 140 is prevented. To this end, the hydrogen absorbing layer (HSL) may be made of a hydrogen storing alloy (hydrogen storing alloy / hydrogen absorbing alloy). Here, the hydrogen storage alloy means an alloy having a property of sucking and storing hydrogen. The hydrogen storage layer (HSL) made of such a hydrogen storage alloy is Fe-based, Ni-based, Ti-based, Fe: Ni, Ti: Fe, La: Ni, La: Ni: Al, Mg: Ni, or Ti: Cr: It may consist of a single layer made of V: Fe, or two or more layers.

The hydrogen storage layer HSL is interposed between the substrate 100 and the thin film transistor 110. That is, the hydrogen storage layer HSL is formed on the entire region of the substrate 100 to have a predetermined thickness on the upper surface of the substrate 100. The hydrogen storage layer HSL absorbs and stores hydrogen, and is formed to overlap the thin film transistor 110, thereby preventing external light from traveling toward the thin film transistor 110. It also serves to prevent a change in characteristics of the thin film transistor 110 due to photo current.

An interlayer insulating layer 105 is interposed between the hydrogen storage layer HSL and the thin film transistor 110. The interlayer insulating layer 105 electrically insulates the hydrogen storage layer HSL and the thin film transistor 110 from each other, and the hydrogen storage layer HSL made of a metal material and the gate electrode GE of the thin film transistor 110. ) To prevent electrical connections between The interlayer insulating layer 105 may be formed of an insulating material such as silicon oxide or silicon nitride, and may be formed of the same material as the gate insulating layer 111.

In addition, the organic light emitting diode display according to the first exemplary embodiment may further include an encapsulation member 200.

The encapsulation member 200 is coupled to the capping layer 170 to protect the organic light emitting device 140 from external oxygen, moisture, and external impact. The encapsulation member 200 is formed of an encapsulation layer formed of at least one material of an inorganic material and an organic material in a single layer or multiple layers so that light emitted from the organic light emitting device 140 can be transmitted or transparent. It may be made of a substrate. Here, when the encapsulation member 200 is made of a transparent substrate, the transparent substrate may be coupled to the capping layer 170 by a transparent adhesive.

As described above, in the organic light emitting diode display according to the first exemplary embodiment, hydrogen generated from the thin film transistor 110, that is, the gate insulating layer 111 and the passivation layer 120 may be absorbed in an external environment. Since the absorption is stored in the layer HSL, changes in characteristics of the thin film transistor 110 and / or the organic light emitting device 140 due to the movement and penetration of hydrogen may be prevented.

3 is a cross-sectional view for describing an organic light emitting diode display according to a second exemplary embodiment of the present invention, which further includes a buffer layer between a substrate and a hydrogen storage layer of the organic light emitting diode display according to the first exemplary embodiment. It is configured by. Accordingly, in describing the present embodiment, duplicate descriptions of the same or corresponding elements as those of the first embodiment will be omitted, and only the buffer layer will be described below.

The buffer layer 101 is formed on the upper surface of the substrate 100 so as to be positioned between the substrate 100 and the hydrogen storage layer HSL to improve the adhesion of the hydrogen storage layer HSL. The buffer layer 101 may be formed of an insulating material such as silicon oxide or silicon nitride, and may be formed of the same material as the gate insulating layer 111. The buffer layer 101 may also serve to block diffusion of a material contained on the substrate 100 into the thin film transistor during a high temperature process during the manufacturing process of the thin film transistor.

4 is a cross-sectional view for describing an organic light emitting diode display according to a third exemplary embodiment of the present invention.

Referring to FIG. 4, the organic light emitting diode display according to the third exemplary embodiment has a bottom emission structure and includes the pixel regions P1, P2, and P3 defined in the substrate 100. The hydrogen storage layer HSL formed in the pixel circuit region PCA, the passivation layer 120 covering the thin film transistor 110, the thin film transistor 110 on the hydrogen storage layer HSL, and the passivation layer 120. An anode electrode (or first electrode; 130) connected to the thin film transistor 110 and overlapping the opening region OA of each pixel region P1, P2, and P3. The formed organic light emitting element 140 and a cathode electrode (or second electrode) 150 connected to the organic light emitting element 140 are configured.

The hydrogen storage layer HSL is patterned in the pixel circuit region of each of the pixel regions P1, P2, and P3 defined in the substrate 100. Since the hydrogen storage layer HSL is the same as the first embodiment of the present invention except that the pixel circuit region on the substrate 100 is formed in a pattern form, redundant description thereof will be omitted.

The thin film transistor 110 is formed on the hydrogen storage layer HSL, and includes a gate electrode GE, a gate insulating layer 111, an active layer AL, an etch stopper layer ESL, and a drain electrode DE. And a source electrode SE. Since the thin film transistor 110 having the above configuration is the same as the first embodiment of the present invention except that the thin film transistor 110 is formed on the hydrogen storage layer HSL, a duplicate description thereof will be omitted.

An interlayer insulating layer 105 is interposed between the hydrogen storage layer HSL and the thin film transistor 110. The interlayer insulating layer 105 electrically insulates the hydrogen storage layer HSL and the thin film transistor 110 from each other, and the hydrogen storage layer HSL made of a metal material and the gate electrode GE of the thin film transistor 110. ) To prevent electrical connections between The interlayer insulating layer 105 may be formed of an insulating material such as silicon oxide or silicon nitride, and may be formed of the same material as the gate insulating layer 111.

In addition, between the substrate 100 and the hydrogen storage layer HSL, a buffer layer 101 (see FIG. 3), such as the organic light emitting display device of the second embodiment, is further formed. In this case, the buffer layer 101 may be patterned in a larger area than the hydrogen storage layer HSL or may be formed in the entire area of the upper surface of the substrate 100.

Each of the passivation layer 120, the anode electrode 130, the organic light emitting element 140, and the cathode electrode 150 is formed in the same manner as in the first embodiment of the present invention. The layer 120 is formed on the substrate 100 to cover the thin film transistor 110 and the gate insulating layer 111. The anode electrode 130 is patterned on the passivation layer 120 overlapping the opening region OA of each pixel region P1, P2, P3, and the contact hole CH formed in the passivation layer 120. ) Is connected to the source electrode SE (or drain electrode DE) of the thin film transistor 110. The organic light emitting element 140 is formed in an opening region of each pixel region P1, P2, P3 on the anode electrode 130 defined by the bank layer 135 formed on the passivation layer 120. . The cathode electrode 150 is formed on the substrate 100 to cover the organic light emitting element 140 and the bank layer 135. Since the organic light emitting diode display according to the third exemplary embodiment has a back light emitting structure, the anode electrode 130 is formed of ITO, IZO, ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : Formed of a transparent conductive material such as F, or In ₂ O ₃ , wherein the cathode electrode 150 comprises a single layer of reflective material such as Ag, Al, Mg, Mg: Ag, LiF: Al, or a compound thereof It is formed of a layer or two or more layers.

Additionally, in the organic light emitting diode display according to the second exemplary embodiment, when the organic light emitting diode 140 emits white light, the color filter layers 160R, 160G, and 160B may be flat and flat. Membrane 125 may be further included.

The color filter layers 160R, 160G, and 160B are patterned on the passivation layer 120 corresponding to the opening regions OA of the pixel areas P1, P2, and P3. In this case, the color filter layers 160R, 160G, and 160B may be formed of color filters of red, green, and blue corresponding to the pixel areas P1, P2, and P3. Accordingly, the color filter layers 160R, 160G, and 160B emit red, green, and white light emitted from the organic light emitting elements 140 in the pixel areas P1, P2, and P3 toward the substrate 100. Filter with blue light.

The flat film 125 is formed on the passivation layer 120 to cover the color filter layers 160R, 160G, and 160B to protect the color filter layers 160R, 160G, and 160B. The flat layer 125 may be made of the same insulating material as the gate insulating layer 111 or may be made of an organic insulating material such as photo acryl or benzocyclobutene (BCB).

In addition, the organic light emitting diode display according to the second exemplary embodiment may further include a passivation layer 190 and an encapsulation member 300.

The passivation layer 190 is formed on the substrate 100 to cover the cathode electrode 150. The passivation layer 190 may be omitted.

The encapsulation member 300 is coupled to the passivation layer 190 to protect the organic light emitting device 140 from external oxygen, moisture, and external impact. The encapsulation member 300 is bonded to the substrate 100 by a sealing member (not shown) formed at an edge of the substrate 100 or by the adhesive while being bonded to the substrate 100 by the sealing member. It may be attached to the protective layer 190. The encapsulation member 300 may be formed of an organic, plastic substrate, or metal substrate.

As described above, the organic light emitting diode display according to the third exemplary embodiment of the present invention has the same structure as the organic light emitting diode display of the first exemplary embodiment of the present invention because the hydrogen storage layer HSL absorbs and stores hydrogen. Changes in characteristics of the thin film transistor 110 and / or the organic light emitting device 140 due to movement and penetration may be prevented.

5 and 6 are cross-sectional views illustrating a modified embodiment of the organic light emitting diode display according to the third exemplary embodiment of the present invention, which is a formation of a hydrogen storage layer of the organic light emitting diode display according to the third exemplary embodiment. It is configured by changing the location.

In the first modification, as illustrated in FIG. 5, the hydrogen storage layer HSL is passivated so as to overlap the pixel circuit region of each pixel region P1, P2, P3 defined in the substrate 100. The layer 120 may be formed in a pattern shape. The hydrogen storage layer HSL is formed of the same material as the hydrogen storage layer of the above-described embodiments to absorb and store hydrogen. In addition, the hydrogen storage layer HSL is generated in the organic light emitting element 130 in the adjacent opening region OA and prevents internal light emitted toward the substrate 100 from traveling toward the thin film transistor 110. It also serves to prevent the characteristic change of the thin film transistor 110 due to the photocurrent.

In addition, the organic light emitting diode display according to the first modified example further includes the hydrogen storage layer HSL interposed between the substrate 100 and the thin film transistor 110, as shown in FIG. 4. May be In this case, since the first hydrogen storage layer is formed below the thin film transistor 110 and the second hydrogen storage layer HSL is formed above the thin film transistor 110, the organic light emitting diode according to the first modified example is provided. The display device may have a larger hydrogen storage capacity by the first and second hydrogen storage layers.

In the second modification, as illustrated in FIG. 6, the hydrogen storage layer HSL may be formed in the entire area of the passivation layer 190 to cover the pixel areas P1, P2, and P3. The hydrogen storage layer HSL is formed of the same material as the hydrogen storage layer of the above-described embodiments to absorb and store hydrogen. The hydrogen storage layer HSL may not be formed on the passivation layer 190, but may be formed on the bottom surface of the encapsulation member 300 facing the passivation layer 190.

In addition, the organic light emitting diode display according to the second modified example includes the hydrogen storage layer HSL interposed between the substrate 100 and the thin film transistor 110, as shown in FIG. 4 or 5. Alternatively, the hydrogen storage layer HSL may be further formed on the passivation layer 120 in a pattern form. In this case, a first hydrogen storage layer is disposed below the thin film transistor 110, a second hydrogen storage layer HSL is disposed on the thin film transistor 110, and a protective layer 190 or an encapsulation member 300 is formed on the first hydrogen storage layer. Since each of the three hydrogen storage layers is formed, the organic light emitting diode display according to the second modified example may have a larger hydrogen storage capacity by the first to third hydrogen storage layers.

7A to 7F are cross-sectional views illustrating a method of manufacturing the OLED display according to the first embodiment of the present invention, which relates to the method of manufacturing the OLED display shown in FIG. 2. In the following, overlapping descriptions of repeated portions in materials, structures, and the like of each structure will be omitted.

First, as shown in FIG. 7A, a hydrogen storage layer HSL is formed to a predetermined thickness on the substrate 100, and an interlayer insulating layer 105 is formed on the hydrogen storage layer HSL. Here, the hydrogen storage layer (HSL) may be formed by a known technique such as pressure molding or plating molding using a powder made of a hydrogen storage alloy.

Optionally, before the process of forming the hydrogen storage layer HSL, a buffer layer 101 (see FIG. 3) may be formed on an upper surface of the substrate 100.

Next, as shown in FIG. 7B, a gate electrode GE is disposed on the interlayer insulating layer 105 corresponding to the pixel circuit region of each pixel region P1, P2, and P3 defined on the substrate 100. The thin film transistor 110 including the gate insulating layer 111, the active layer AL, the etch stopper layer ESL, the drain electrode DE, and the source electrode SE is formed.

Specifically, the formation process of the thin film transistor 100 will be described.

First, a gate electrode GE is patterned on the interlayer insulating layer 105, and a gate insulating layer 111 is formed on the interlayer insulating layer 105 including the gate electrode GE. That is, the gate electrode GE is formed by depositing a gate electrode material on the interlayer insulating film 105 through sputtering, and forming a photoresist mask pattern on the gate electrode material, and then exposing the gate electrode material. The pattern may be formed by a patterning process by sequentially performing the developing and etching processes.

The gate insulating layer 111 may be formed on the entire surface of the interlayer insulating layer 105 including the gate electrode GE through PECVD.

Subsequently, an active layer AL is patterned on the gate insulating layer 111 overlapping the gate electrode GE.

The active layer AL is a deposition process, a furnace or rapid heat treatment (Rapid) to form an amorphous oxide semiconductor on the gate insulating layer 111 by sputtering or metal organic chemical vapor deposition (MOCVD) A crystallization process of crystallizing the amorphous oxide semiconductor by a high temperature heat treatment process of about 650 ° C. or higher using a thermal process (RTP), and a patterning process of removing oxide semiconductor formed in the remaining regions except for the region overlapping the gate electrode GE. It can be formed through.

Optionally, the active layer AL is described as being formed of an oxide semiconductor, but is not limited thereto, and is formed by sputtering, metal organic chemical vapor deposition (MOCVD), or chemical vapor deposition (CVD). It may be made of a silicon-based semiconductor.

Subsequently, the etch stopper layer ESL is patterned on the center area of the active layer AL except for one side and the other side of the active layer AL. That is, the etch stopper layer ESL is formed on the entire surface of the etch stopper layer material layer on the active layer AL and the gate insulating layer 111, and then etch stopper overlaps the center region of the active layer AL. After forming a mask pattern on the layer material layer, an etch stopper layer material is removed through an etching process using the mask pattern as a mask to form an etch stopper layer (ESL) on the center region of the active layer AL. At the same time, both sides of the active layer 116 that are not covered by the mask pattern are conductored to form drain and source regions in both regions of the active layer 116.

Next, the mask pattern is removed.

Subsequently, each of the drain electrode DE and the source electrode SE connected to each of the drain and source regions of the active layer AL is patterned. That is, the drain electrode DE and the source electrode SE may include a source / drain electrode material on the substrate 100 including the gate insulating layer 111, the active layer AL, and the etch stopper layer ESL. Separated from each other on the etch stopper layer (ESL) by a deposition process for forming a photoresist and a patterning process for forming a photoresist mask pattern on the source / drain electrode material, and then performing exposure, development, and etching processes. The pattern may be formed to be connected to each of the source region and the drain region of the active layer AL.

Next, as illustrated in FIG. 7C, the passivation layer 120 is formed on the entire surface of the substrate 100 including the thin film transistor 110.

Next, a contact for exposing a portion of the source electrode SE of the thin film transistor 110 formed in each pixel region P1, P2, P3 through a contact hole forming process of removing a portion of the passivation layer 120. The hole CH is formed.

Subsequently, after forming an anode electrode material on the passivation layer 120 including the contact hole CH, the entire region of each pixel region P1, P2, and P3 is overlapped with the thin film transistor 110. After forming the anode electrode 130 connected to the source electrode SE of the thin film transistor 110 through the contact hole CH, a bank defining opening regions of the pixel regions P1, P2, and P3. The layer 135 is patterned on the passivation layer 120.

The anode electrode 130 is a deposition process of forming a reflective material, or an anode electrode material including a transparent conductive material and a reflective material on the passivation layer 120, a photoresist mask pattern on the anode electrode material After that, the pixel regions P1, P2, and P3 of the pixel regions P1, P2, and P3 are connected to the source electrode SE of the thin film transistor 110 through a contact hole CH by a patterning process that sequentially performs exposure, development, and etching processes. Patterns may be formed over the entire region.

The bank layer 130 forms an insulating material on the anode electrode 130 and the passivation layer 120 and then removes the insulating material of the opening areas of the pixel areas P1, P2, and P3. Pattern can be formed by.

Then, as illustrated in FIG. 7D, the organic light emitting diode 140 is formed on the anode electrode 130 exposed to each pixel region P1, P2, and P3 defined by the bank layer 130. . The organic light emitting device 140 may include forming a hole injection layer on the anode electrode 130, forming a hole transport layer on the hole injection layer, forming an organic light emitting layer on the hole transport layer, It may be formed by a process of forming an electron transport layer on the organic light emitting layer, a process of forming an electron injection layer on the electron transport layer. Here, the process of forming one or two or more layers of the hole injection layer, the hole transport layer, the electron transport layer and the electron injection layer may be omitted.

Subsequently, a cathode electrode 150 made of a transparent conductive material is formed on the entire surface of the substrate 100 including the organic light emitting diode 140 and the bank layer 130. The cathode electrode 150 may be formed by sputtering, metal organic chemical vapor deposition (MOCVD), or chemical vapor deposition (CVD) according to the transparent conductive material.

Next, as shown in FIG. 7E, a first insulating layer 161 made of an insulating material is formed on the cathode electrode 150.

Subsequently, color filter layers 160R, 160G, and 160B are patterned on the first insulating layer 161 corresponding to the opening regions of the pixel areas P1, P2, and P3 overlapping the organic light emitting element 140. . The color filter layers 160R, 160G, and 160B may be formed of color filter materials of red, green, and blue colors corresponding to the pixel areas P1, P2, and P3. Each of the red, green, and blue color filter materials is patterned in the entire area of each pixel area P1, P2, P3. The color filter layers 160R, 160G, and 160B may be formed by a printing process or a printing process using a mask.

Subsequently, a second insulating film 163 is formed on the first insulating film 161 on which the color filter layers 160R, 160G, and 160B are formed.

Subsequently, a capping layer 170 may be further formed on the second insulating layer 163.

Then, as shown in FIG. 7F, an encapsulation member 200 is formed on the capping layer 170. The encapsulation member 200 may include an encapsulation layer in which at least one material of an inorganic material and an organic material is formed in a single layer or multiple layers. The encapsulation member 200 according to another example may be made of a transparent substrate and may be coupled to the capping layer 170 by a transparent adhesive.

As such, in the method of manufacturing the organic light emitting diode display according to the first exemplary embodiment, when the organic light emitting layer of the organic light emitting element 140 is formed of a material emitting color light, the cathode electrode 150 may be disposed on the cathode electrode 150. Each of the first insulating layer 161, the color filter layers 160R, 160G, and 160B, and the second insulating layer 163 may be omitted.

8A to 8E are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention, which relates to the method of manufacturing the organic light emitting display device illustrated in FIG. 4. In the following, overlapping descriptions of repeated portions in materials, structures, and the like of each structure will be omitted.

First, as shown in FIG. 8A, the hydrogen storage layer HSL described above is patterned on the pixel circuit region PCA of each pixel region P1, P2, P3 defined on the substrate 100. An interlayer insulating layer 105 is formed on the hydrogen storage layer HSL and the substrate 100.

Next, as shown in FIG. 8B, a gate electrode GE, a gate insulating layer 111, an active layer AL, and an etch stopper layer are formed on the interlayer insulating layer 105 overlapping the hydrogen storage layer HSL. The thin film transistor 110 including the ESL, the drain electrode DE, and the source electrode SE is formed. Since the formation process of the thin film transistor 110 is the same as the method of manufacturing the organic light emitting diode display according to the first embodiment of the present invention described above, a duplicate description thereof will be omitted.

Next, as shown in FIG. 8C, the passivation layer 120 is formed on the entire surface of the substrate 100 including the thin film transistor 110.

Subsequently, the color filter layers 160R, 160G, and 160B described above are patterned on the passivation layer 120 corresponding to the opening regions OA of the pixel areas P1, P2, and P3.

Next, as shown in FIG. 8D, a flat film 125 is formed on the color filter layers 160R, 160G, and 160B and the passivation layer 120.

Subsequently, a source electrode of the thin film transistor 110 formed in each pixel region P1, P2, and P3 through a contact hole forming process of removing a portion of the flat layer 125 on the passivation layer 120. SE) to form a contact hole (CH) exposing a portion.

Subsequently, after forming an anode electrode material on the flat film 125 including the contact hole CH, the opening regions OA of the pixel regions P1, P2, and P3 so as to overlap the thin film transistor 110. And an anode electrode 130 connected to the source electrode SE of the thin film transistor 110 through the contact hole CH.

Subsequently, a bank layer overlapping the pixel circuit region PCA of each pixel region P1, P2, and P3 and the edge portion of the anode electrode 130 to define an opening region of each pixel region P1, P2, P3. A pattern 135 is formed on the flat film 125.

Then, as shown in FIG. 8E, the organic light emitting diode 140 is formed on the anode electrode 130 exposed to each pixel region P1, P2, and P3 defined by the bank layer 130. .

Subsequently, a cathode electrode 150 made of a transparent conductive material is formed on the entire surface of the substrate 100 including the organic light emitting diode 140 and the bank layer 130.

Subsequently, a passivation layer 190 is formed on the cathode electrode 150.

Subsequently, an encapsulation member 300 is formed on the passivation layer 190. Here, the encapsulation member 300 is bonded to the substrate 100 by the sealing member (not shown) formed on the edge portion of the substrate 100, or is bonded to the substrate while being opposed to the substrate 100 by the sealing member It may be attached to the protective film 190 by. The encapsulation member 300 may be formed of an organic, plastic substrate, or metal substrate.

In the method of manufacturing the organic light emitting diode display according to the second exemplary embodiment of the present invention, when the organic light emitting layer of the organic light emitting element 140 is formed of a material emitting color light, the passivation layer 120 may be disposed on the passivation layer 120. Each of the planarization film 125 and the color filter layers 160R, 160G, and 160B may be omitted. In this case, the anode electrode 130 is formed on the passivation layer 120 to be connected to the source electrode SE of the thin film transistor 110 through the contact hole CH formed in the passivation layer 120. The bank layer 135 is also formed on the passivation layer 120 so as to overlap the pixel circuit region PCA of each pixel region P1, P2, and P3 and the edge portion of the anode electrode 130. An opening area of each pixel area P1, P2, P3 is defined.

9A to 9C are cross-sectional views illustrating a method of manufacturing an OLED display according to a third exemplary embodiment of the present invention, which relates to the method of manufacturing the OLED display illustrated in FIG. 5. In the following, overlapping descriptions of repeated portions in materials, structures, and the like of each structure will be omitted.

First, as illustrated in FIG. 9A, the gate electrode GE, the gate insulating layer 111, and the pixel circuit region PCA of each pixel region P1, P2, and P3 defined on the substrate 100 may be formed. The thin film transistor 110 including the active layer AL, the etch stopper layer ESL, the drain electrode DE, and the source electrode SE is formed. Since the process of forming the thin film transistor 110 is the same as the method of manufacturing the organic light emitting diode display according to the first exemplary embodiment of the present invention, except that the thin film transistor 110 is formed on the upper surface of the substrate 100, the description thereof will be repeated. Will be omitted.

Next, the passivation layer 120 is formed on the entire surface of the substrate 100 including the thin film transistor 110.

Next, as illustrated in FIG. 9B, the hydrogen storage layer HSL described above is patterned on the passivation layer 120 overlapping the thin film transistor 110.

Subsequently, the color filter layers 160R, 160G, and 160B described above are patterned on the passivation layer 120 corresponding to the opening regions OA of the pixel areas P1, P2, and P3.

Next, as shown in FIG. 9C, a flat film 125 is formed on the color filter layers 160R, 160G, and 160B and the passivation layer 120.

Subsequently, a source electrode of the thin film transistor 110 formed in each pixel region P1, P2, and P3 is formed through a contact hole forming process of removing a portion of the flat film 125 on the passivation layer 120. SE) to form a contact hole (CH) exposing a portion.

Subsequently, after forming an anode electrode material on the flat film 125 including the contact hole CH, the opening regions OA of the pixel regions P1, P2, and P3 so as to overlap the thin film transistor 110. And an anode electrode 130 connected to the source electrode SE of the thin film transistor 110 through the contact hole CH.

Subsequently, a bank layer overlapping the pixel circuit region PCA of each pixel region P1, P2, and P3 and the edge portion of the anode electrode 130 to define an opening region of each pixel region P1, P2, P3. A pattern 135 is formed on the flat film 125.

Subsequently, the organic light emitting diode 140 is formed on the anode electrode 130 exposed to the pixel areas P1, P2, and P3 defined by the bank layer 130.

Subsequently, a cathode electrode 150 made of a transparent conductive material is formed on the entire surface of the substrate 100 including the organic light emitting diode 140 and the bank layer 130.

Subsequently, a passivation layer 190 is formed on the cathode electrode 150.

Subsequently, the encapsulation member 300 described above is formed on the passivation layer 190.

As described above, when the organic light emitting layer of the organic light emitting diode 140 is formed of a material that emits color light, in the method of manufacturing the organic light emitting diode display according to the third exemplary embodiment of the present disclosure, As in the method of manufacturing the organic light emitting diode display according to the embodiment, each of the flat film 125 and the color filter layers 160R, 160G, and 160B formed on the passivation layer 120 may be omitted.

In addition, the method of manufacturing the organic light emitting diode display according to the third exemplary embodiment of the present invention may be performed in each pixel region P1, P2, and P3 before the thin film transistor 110 is formed, as shown in FIG. 8B. Patterning the hydrogen storage layer HSL on the upper surface of the substrate 100 corresponding to the pixel circuit region PCA, and forming an interlayer insulating layer 105 covering the hydrogen storage layer HSL. Can be done.

10A and 10B are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to a fourth exemplary embodiment of the present invention, which relates to the method of manufacturing the organic light emitting diode display illustrated in FIG. 6. In the following, overlapping descriptions of repeated portions in materials, structures, and the like of each structure will be omitted.

First, as illustrated in FIG. 10A, the gate electrode GE, the gate insulating layer 111, and the pixel circuit region PCA of each pixel region P1, P2, and P3 defined on the substrate 100 may be formed. The thin film transistor 110 including the active layer AL, the etch stopper layer ESL, the drain electrode DE, and the source electrode SE is formed. Since the process of forming the thin film transistor 110 is the same as the method of manufacturing the organic light emitting diode display according to the first exemplary embodiment of the present invention, except that the thin film transistor 110 is formed on the upper surface of the substrate 100, the description thereof will be repeated. Will be omitted.

In addition, prior to the forming process of the thin film transistor 110, as shown in FIG. 8B, an upper surface of the substrate 100 corresponding to the pixel circuit region PCA of each pixel region P1, P2, P3 is formed. The process of forming the hydrogen storage layer HSL and forming an interlayer insulating layer 105 covering the hydrogen storage layer HSL may be performed.

Next, the passivation layer 120 is formed on the entire surface of the substrate 100 including the thin film transistor 110.

Subsequently, the color filter layers 160R, 160G, and 160B described above are patterned on the passivation layer 120 corresponding to the opening regions OA of the pixel areas P1, P2, and P3.

Subsequently, a flat film 125 is formed on the color filter layers 160R, 160G and 160B or the color filter layers 160R, 160G and 160B and the passivation layer 120.

Subsequently, a source electrode of the thin film transistor 110 formed in each pixel region P1, P2, and P3 through a contact hole forming process of removing a portion of the flat layer 125 on the passivation layer 120. SE) to form a contact hole (CH) exposing a portion.

Subsequently, after forming an anode electrode material on the flat film 125 including the contact hole CH, the opening regions OA of the pixel regions P1, P2, and P3 so as to overlap the thin film transistor 110. And an anode electrode 130 connected to the source electrode SE of the thin film transistor 110 through the contact hole CH.

Subsequently, a bank layer overlapping the pixel circuit region PCA of each pixel region P1, P2, and P3 and the edge portion of the anode electrode 130 to define an opening region of each pixel region P1, P2, P3. A pattern 135 is formed on the flat film 125.

Subsequently, the organic light emitting diode 140 is formed on the anode electrode 130 exposed to the pixel areas P1, P2, and P3 defined by the bank layer 130.

Subsequently, a cathode electrode 150 made of a transparent conductive material is formed on the entire surface of the substrate 100 including the organic light emitting diode 140 and the bank layer 130.

Subsequently, a passivation layer 190 is formed on the cathode electrode 150.

Thereafter, the hydrogen storage layer HSL is formed on the passivation layer 190, and then the encapsulation member 300 is formed on the hydrogen storage layer HSL, or the hydrogen storage layer HSL is formed. The encapsulation member 300 is formed on the passivation layer 190.

In the method of manufacturing the organic light emitting diode display according to the fourth exemplary embodiment of the present invention, when the organic light emitting layer of the organic light emitting element 140 is formed of a material that emits color light, the second embodiment of the present invention described above. As in the method of manufacturing the organic light emitting diode display according to the embodiment, each of the flat film 125 and the color filter layers 160R, 160G, and 160B formed on the passivation layer 120 may be omitted.

In addition, the manufacturing method of the organic light emitting diode display according to the fourth exemplary embodiment of the present invention may be performed in each pixel region P1, P2, and P3 before the thin film transistor 110 is formed, as shown in FIG. 8B. Patterning the hydrogen storage layer HSL on the upper surface of the substrate 100 corresponding to the pixel circuit region PCA, and forming an interlayer insulating layer 105 covering the hydrogen storage layer HSL. Can be done.

Furthermore, the hydrogen storage layer HSL described above is formed on the passivation layer 120 overlapping with the thin film transistor 110 between the process of forming the passivation layer 120 and the process of forming the flat film 125. The process of pattern formation can be performed further.

As described above, the organic light emitting diode display and the method of manufacturing the same according to the exemplary embodiments of the present invention absorb and store hydrogen in the hydrogen storage layer HSL formed to overlap the thin film transistor 110, so that the hydrogen moves and penetrates. Due to the characteristic change of the thin film transistor 110 and / or the organic light emitting device 140 can be prevented.

Additionally, in the above-described organic light emitting diode display and a method of manufacturing the same, the gate electrode of the thin film transistor has been described as being positioned under the active layer, but the present invention is not limited thereto. The gate electrode may be located above the active layer.

In addition, the positions of the anode electrode (or the first electrode) and the cathode electrode (or the second electrode) may be changed depending on the top emission structure or the bottom emission structure of the OLED display. That is, the organic light emitting diode display may be classified into a cathode common type and an anode common type. In the cathode common type, the cathode electrode is used as a common electrode to which a low potential power (or ground power) is applied, and the anode is connected to the source electrode or the drain electrode of the thin film transistor. In the anode common type, the anode electrode is used as a common electrode to which a driving power is applied, and the cathode electrode is connected to the source electrode or the drain electrode of the thin film transistor.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the art that various substitutions, modifications, and changes can be made without departing from the technical matters of the present invention. It will be apparent to those who have the knowledge of. Therefore, the scope of the present invention is represented by the following claims, and it should be construed that all changes or modifications derived from the meaning and scope of the claims and equivalent concepts thereof are included in the scope of the present invention.

100 substrate 101 buffer layer
105: interlayer insulating film 110: thin film transistor
111 gate insulating film 120 passivation layer
130: anode electrode (or first electrode) 135: bank layer
140: organic light emitting element 150: cathode electrode (or second electrode)
160R, 160G, 160B: color filter layer 170: capping layer
190: protective film 200, 300: sealing member

Claims (15)

A thin film transistor formed on the substrate;
A passivation layer covering the thin film transistor;
A first electrode connected to the thin film transistor through the passivation layer;
An organic light emitting element formed on the first electrode;
A second electrode connected to the organic light emitting element; And
A hydrogen storage layer formed on the substrate to at least partially overlap the thin film transistor to absorb and store hydrogen generated in at least one of the thin film transistor and the passivation layer,
The hydrogen storage layer is formed on an upper surface of the substrate and positioned below the thin film transistor. The method of claim 1,
An interlayer insulating film electrically insulating the hydrogen storage layer from the thin film transistor;
And the hydrogen storage layer is interposed between the interlayer insulating layer and the substrate. The method of claim 2,
And a buffer layer interposed between the hydrogen storage layer and the substrate. The method of claim 1,
A passivation layer covering the second electrode; And
It further comprises a sealing member for covering the protective film,
The substrate has a plurality of pixel regions consisting of a pixel circuit region and an opening region,
And the hydrogen storage layer is formed on an upper surface of the passivation layer or a lower surface of the encapsulation member facing the passivation layer. The method according to any one of claims 1 to 3,
The substrate has a plurality of pixel regions consisting of a pixel circuit region and an opening region,
And the hydrogen storage layer is formed on an upper surface of the substrate so as to overlap a pixel circuit region except for the opening region of each of the plurality of pixel regions. The method according to any one of claims 1 to 3,
The substrate has a plurality of pixel regions consisting of a pixel circuit region and an opening region,
And the hydrogen storage layer is formed on the passivation layer so as to overlap a pixel circuit region except for the opening region of each of the plurality of pixel regions. The method according to any one of claims 1 to 4,
The hydrogen storage layer is a single layer selected from Fe-based, Ni-based, Ti-based, Fe: Ni, Ti: Fe, La: Ni, La: Ni: Al, Mg: Ni, and Ti: Cr: V: Fe or An organic light emitting display device comprising two or more multilayers. Forming a thin film transistor on the substrate;
Forming a passivation layer covering the thin film transistor;
Forming a first electrode penetrating the passivation layer and connected to the thin film transistor;
Forming an organic light emitting element on the first electrode;
Forming a second electrode connected to the organic light emitting element; And
Forming a hydrogen storage layer on the substrate at least partially overlapping the thin film transistor for absorbing and storing hydrogen generated in at least one of the thin film transistor and the passivation layer,
The hydrogen absorbing layer is formed on an upper surface of the substrate and positioned below the thin film transistor. delete The method of claim 8,
The substrate has a plurality of pixel regions consisting of a pixel circuit region and an opening region,
And the hydrogen storage layer is formed on an upper surface of the substrate so as to overlap a pixel circuit region except for the opening region of each of the plurality of pixel regions. The method of claim 8,
The substrate has a plurality of pixel regions consisting of a pixel circuit region and an opening region,
And the hydrogen storage layer is formed on the passivation layer so as to overlap the pixel circuit region except for the opening region of each of the plurality of pixel regions. The method of claim 8,
Forming a protective film on the second electrode; And
It further comprises the step of forming a sealing member on the protective film,
The substrate has a plurality of pixel regions consisting of a pixel circuit region and an opening region,
And the hydrogen storage layer is formed on an upper surface of the passivation layer or a lower surface of the encapsulation member facing the passivation layer. The method according to claim 8 or 10,
And forming an interlayer insulating film covering the hydrogen storage layer on the substrate.
And the thin film transistor is formed on the interlayer insulating film. The method of claim 13,
It further comprises the step of forming a buffer layer on the upper surface of the substrate,
And the buffer layer is formed between the substrate and the hydrogen storage layer. The method according to any one of claims 8 and 10 to 12,
The hydrogen storage layer is a single layer selected from Fe-based, Ni-based, Ti-based, Fe: Ni, Ti: Fe, La: Ni, La: Ni: Al, Mg: Ni, and Ti: Cr: V: Fe or A method of manufacturing an organic light emitting display device, comprising two or more multilayers.

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