KR20150059196A - Organic light emitting display device and method for manufacturing thereof - Google Patents

Abstract

The present invention provides an organic light emitting display device and a manufacturing method thereof, the organic light emitting display, capable of preventing the feature variation of a thin film transistor due to hydrogen permeation. The organic light emitting display device according to the present invention includes the thin film transistor which is formed on a substrate, a passivation layer which covers the thin film transistor, a first electrode which is connected to the thin film transistor by passing through the passivation layer, an organic light emitting element which is formed on the first electrode, a second electrode which is connected to the organic light emitting element, and a hydrogen absorption layer which is formed on the substrate to partially overlap the thin film transistor and absorbs and stores the hydrogen generated from at least one of the thin film transistor and the passivation layer.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to an organic light emitting display, and more particularly, to an organic light emitting display and a method of manufacturing the same.

In recent years, the importance of display devices has been increasing with the development of multimedia. In response to this, flat panel display devices such as liquid crystal display devices, plasma display devices, and organic light emitting display devices have been commercialized. Among such flat panel display devices, liquid crystal display devices and organic light emitting display devices are widely used in a variety of fields such as a notebook computer, a television, a tablet computer, a monitor, a smart phone, a portable display device, a portable information device, and the like due to their excellent characteristics such as thinness, light weight, And is widely used as a display device of a display device.

The OLED display has a structure in which a light emitting layer is formed between a cathode for injecting electrons and an anode for injecting holes, and electrons generated in the cathode and holes generated in the anode are injected into the light- The injected electrons and holes are coupled to generate an exciton, and the generated exciton drops from the excited state to the ground state to emit light, thereby displaying an image do.

1 is a schematic view of a general organic light emitting diode display.

Referring to FIG. 1, a typical OLED display includes a substrate 10, a pixel array unit 20, an organic light emitting diode (OLED), and a sealing member 30.

The substrate 10 may be made of glass or plastic.

The pixel array unit 20 includes a plurality of gate lines formed on the substrate 10 so as to cross each other, a thin film transistor connected to the plurality of data lines, a passivation layer covering the thin film transistor, and a passivation layer connected to the thin film transistor And a pixel electrode.

The organic light emitting diode OLED includes an organic light emitting layer formed on the pixel electrode, and a cathode electrode formed on the organic light emitting layer. The organic light emitting device OLED emits light by the data current supplied from the thin film transistor.

The sealing member is composed of a protruding substrate or an encapsulating layer and encapsulates the organic light emitting diode OLED to protect the organic light emitting diode OLED from moisture or oxygen.

Such a conventional organic light emitting display device has a problem that characteristics of a thin film transistor are changed due to penetration in an external environment or hydrogen (H) generated in a thin film (for example, a gate insulating film) or a passivation layer constituting a thin film transistor have. That is, the hydrogen (H) is very small and light and can penetrate into the inside of the thin film transistor from the external environment, or can be generated in the thin film constituting the thin film transistor, and penetrate into the active layer (or semiconductor layer) of the thin film transistor.

Therefore, in the conventional organic light emitting diode display device, the threshold voltage characteristic of the thin film transistor is changed due to hydrogen permeation into the active layer (or semiconductor layer) of the thin film transistor. Further, due to hydrogen penetration into the organic light emitting device OLED, (OLED) is deteriorated.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide an organic light emitting display device and a method of manufacturing the same, which can prevent a characteristic change of a thin film transistor due to hydrogen penetration.

Other features and advantages of the invention will be set forth in the description which follows, or may be obvious to those skilled in the art from the description and the claims.

According to an aspect of the present invention, there is provided an OLED display comprising: a thin film transistor formed on a substrate; A passivation layer covering the thin film transistor; A first electrode connected to the thin film transistor through the passivation layer; An organic light emitting device formed on the first electrode; A second electrode connected to the organic light emitting device; And a hydrogen storage layer formed on the substrate so as to at least partially overlap the thin film transistor and absorbing and storing hydrogen generated in at least one of the thin film transistor and the passivation layer.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display, including: forming a thin film transistor on a substrate; Forming a passivation layer covering the thin film transistor; Forming a first electrode through the passivation layer and connected to the thin film transistor; Forming an organic light emitting device on the first electrode; Forming a second electrode connected to the organic light emitting device; And forming a hydrogen occlusion layer for absorbing and storing hydrogen generated in at least one of the thin film transistor and the passivation layer on the substrate at least partially overlapping the thin film transistor.

The method of fabricating an organic light emitting display includes: forming a protective layer on the second electrode; And forming a sealing member on the protective film, wherein the substrate has a plurality of pixel regions including a pixel circuit region and an opening region, and the hydrogen absorbing layer is formed on an upper surface of the protecting film, May be formed on the lower surface of the sealing member facing the sealing member.

According to the present invention, since the hydrogen absorbing layer formed to overlap with the thin film transistor absorbs and stores hydrogen, characteristics of the thin film transistor and / or the organic light emitting device due to hydrogen permeation can be prevented.

1 is a schematic view of a general organic light emitting diode display.
2 is a cross-sectional view illustrating an OLED display according to a first embodiment of the present invention.
3 is a cross-sectional view illustrating an OLED display according to a second embodiment of the present invention.
4 is a cross-sectional view illustrating an OLED display according to a third embodiment of the present invention.
5 and 6 are cross-sectional views illustrating an OLED display according to a third embodiment of the present invention.
7A to 7F are cross-sectional views illustrating a method of manufacturing an OLED display according to a first embodiment of the present invention.
8A to 8E are cross-sectional views illustrating a method of manufacturing an OLED display according to a second embodiment of the present invention.
9A to 9C are cross-sectional views illustrating a method of manufacturing an OLED display according to a third embodiment of the present invention.
10A and 10B are cross-sectional views illustrating a method of manufacturing an OLED display according to a fourth embodiment of the present invention.

The meaning of the terms described herein should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms.

It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one.

The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of an organic light emitting diode display and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view illustrating an OLED display according to a first embodiment of the present invention.

Referring to FIG. 2, the OLED display according to the first embodiment of the present invention has a top emission structure, and includes a thin film transistor 110 formed on a substrate 100, a thin film transistor 110 An anode electrode (or first electrode) 130 connected to the TFT 110 through the passivation layer 120, an organic light emitting diode (OLED) 130 formed on the anode electrode 130, and a passivation layer 120 covering the passivation layer 120. [ A cathode electrode (or a second electrode) 150 connected to the organic light emitting diode 140 and a hydrogen storage layer HSL formed on the substrate 100 to overlap the thin film transistor 110 .

Although glass is mainly used for the substrate 100, transparent plastic such as polyimide which can be bent or rolled can be used. When polyimide is used as the material of the substrate 100, polyimide excellent in heat resistance that can withstand high temperatures can be used, considering that a high temperature deposition process is performed on the substrate 100.

The thin film transistor 110 is formed in a pixel circuit region of each pixel region P1, P2, and P3 defined in the substrate 100. [ The thin film transistor 110 includes a gate electrode GE, a gate insulating film 111, an active layer AL, an etch stopper layer ESL, a drain electrode DE, and a source electrode SE.

The gate electrode GE is patterned on the substrate 100. The gate electrode GE may be made of Mo, Al, Cr, Cu, or an alloy thereof. The gate electrode GE may be formed of a single layer of the metal or alloy, or multiple layers of two or more layers.

The gate insulating layer 111 is formed on the substrate 100 so as to cover the gate electrode GE and insulates the gate electrode GE from the active layer AL. The gate insulating layer 111 may be made of an inorganic insulating material such as silicon oxide or silicon nitride, but is not limited thereto. The gate insulating layer 111 may be made of an organic insulating material such as photo acryl or benzocyclobutene (BCB) It is possible.

The active layer AL is patterned on the gate insulating layer 111 so as to overlap with the gate electrode GE. The active layer 116 may be made of an oxide semiconductor such as In-Ga-Zn-O (IGZO), but is not limited thereto, and may be made of a silicon-based semiconductor.

The etch stopper layer (ESL) is patterned on the active layer (AL) except for one side and the other side of the active layer (AL). The etch stopper layer ESL serves to prevent the channel region of the active layer AL from being etched during an etching process for patterning the source electrode SE and the drain electrode DE. The etch stopper layer (ESL) may be made of an inorganic insulating material such as silicon oxide or silicon nitride, but is not limited thereto. The etch stopper layer (ESL) may be omitted depending on the structure of the thin film transistor.

The drain electrode DE and the source electrode SE are formed in a pattern on the etch stopper layer ESL, the active layer AL, and the gate insulating film 111 while facing each other.

The drain electrode DE extends from the ESL to one side of the active layer ESL and is connected to the drain region of the active layer AL. The source electrode SE extends from the etch stopper layer ESL to the other side of the active layer AL and is connected to the source region of the active layer AL. The drain electrode DE and the source electrode SE may be made of Mo, Al, Cr, Cu, or an alloy thereof. The drain electrode DE and the source electrode SE may be formed of a single layer of the metal or alloy or multiple layers of two or more layers.

The passivation layer 120 is formed on the substrate 100 so as to cover the thin film transistor 110 and the gate insulating layer 111. The passivation layer 120 may be made of an inorganic insulating material such as silicon oxide or silicon nitride. However, the passivation layer 120 may be formed of an organic insulating material such as photo acryl or benzocyclobutene (BCB) It is possible.

The anode electrode 130 is formed in an opening region of each of the pixel regions P1, P2, and P3 defined in the substrate 100 so as to cover the thin film transistor 110 and is formed in the passivation layer 120 And is connected to the source electrode SE (or the drain electrode DE) of the thin film transistor 110 through the contact hole CH. The anode electrode 130 may be formed of a single layer of a reflective material, or may be formed of two or more layers including a transparent conductive material layer and a reflective material layer. Here, the transparent conductive material layer may be ITO, IZO, ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, In ₂ O ₃ , : Ag, LiF: Al, or a compound thereof.

The organic light emitting diode 140 is formed in an opening region of each pixel region P1, P2, and P3 on the anode electrode 130 defined by the bank layer 135 formed on the passivation layer 120 . Although not shown, the organic light emitting diode 140 may have a structure in which a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer are sequentially stacked. However, one or more layers of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be omitted. The organic light emitting layer may be formed to emit light of the same color, for example white, for each pixel, or may emit light of different colors, for example, red, green, or blue, for each pixel.

The bank layer 135 is formed on the passivation layer 120 so as to cover the edge portion of the anode electrode 128 to define the opening regions of the pixel regions P1, P2, and P3. The bank layer 135 may be formed of an organic insulating material such as polyimide, photo acryl, or benzocyclobutene (BCB), but the present invention is not limited thereto.

The cathode electrode 150 is formed on the substrate 100 so as to cover the organic light emitting diode 140 and the bank layer 135. The cathode electrode 150 is formed in the shape of an electrode common to all pixels and is not divided into the pixel regions P1, P2, and P3. The cathode electrode 150 is formed in the opening regions of the pixel regions P1, P2, And is commonly connected to the device 140. That is, the cathode electrode 150 may be formed not only on the organic light emitting diode 140 but also on the bank layer 135. The cathode electrode 150 is formed of a transparent conductive material such as ITO, IZO, ZnO, ZnO: B, ZnO: Al, SnO ₂ , SnO ₂ : F, or In ₂ O ₃ .

In addition, the organic light emitting diode display according to the first embodiment of the present invention further includes color filter layers 160R, 160G and 160B when the organic light emitting diode 140 emits white light .

The color filter layers 160R, 160G, and 160B are patterned on the cathode electrode 150 corresponding to the opening regions of the pixel regions P1, P2, and P3. The color filter layers 160R, 160G, and 160B may include red, green, and blue color filters corresponding to the pixel regions P1, P2, and P3. Accordingly, the color filter layers 160R, 160G, and 160B filter the white light emitted from the organic light emitting devices 140 of the pixel regions P1, P2, and P3 with red, green, and blue light.

A first insulating layer 161 is interposed between the color filter layers 160R, 160G and 160B and the cathode electrode 150. The color filter layers 160R, 160G and 160B are covered with a second insulating layer 163 All. A capping layer 170 may be further formed on the second insulating layer 163.

The capping layer 170 protects the organic light emitting diode 140 from external oxygen and moisture while increasing the light extracting effect. The capping layer 170 may be formed of any one of a hole transporting layer, an electron transporting layer, and an organic light emitting layer. The capping layer 170 may be formed instead of the second insulating layer 163, or may be omitted.

The hydrogen storage layer HSL absorbs and stores hydrogen generated in at least one of the thin film transistor 110, i.e., the gate insulating layer 111 and the passivation layer 120, Thereby preventing the characteristics of the thin film transistor 110 and / or the organic light emitting element 140 from being changed. For this purpose, the hydrogen absorbing layer (HSL) may be formed of a hydrogen storing alloy / hydrogen absorbing alloy. Here, the hydrogen absorbing alloy means an alloy having a property of sucking and storing hydrogen. The hydrogen absorbing layer (HSL) made of the hydrogen absorbing alloy may be one of Fe, Ni, Ti, Fe: Ni, Ti: Fe, La: Ni, La: Ni: V: Fe or the like, or multiple layers of two or more layers.

The hydrogen storage layer (HSL) is interposed between the substrate (100) and the thin film transistor (110). That is, the hydrogen storage layer HSL is formed on the entire surface of the substrate 100 so as to have a constant thickness on the top surface of the substrate 100. The hydrogen storage layer HSL is formed not only to absorb and store hydrogen but also to prevent the external light from propagating toward the thin film transistor 110 because the thin film transistor 110 is overlapped with the hydrogen storage layer HSL. And also prevents a change in characteristics of the thin film transistor 110 due to a photo current.

An interlayer insulating layer 105 is interposed between the hydrogen storage layer HSL and the thin film transistor 110. The interlayer insulating layer 105 electrically isolates the hydrogen storage layer HSL and the thin film transistor 110 from each other to electrically connect the hydrogen storage layer HSL and the gate electrode GE of the thin film transistor 110, To prevent an electrical connection between them. The interlayer insulating layer 105 may be formed of an insulating material such as silicon oxide or silicon nitride, and may be formed of the same material as the gate insulating layer 111.

In addition, the OLED display according to the first embodiment of the present invention may further include the sealing member 200.

The sealing member 200 is coupled to the capping layer 170 to protect the organic light emitting diode 140 from external oxygen, moisture, and external impact. The sealing member 200 may be formed of a sealing layer in which at least one of an inorganic material and an organic material is formed as a single layer or multiple layers so that light emitted from the organic light emitting diode 140 can be transmitted, Substrate. Here, when the sealing member 200 is formed of a transparent substrate, the transparent substrate may be bonded to the capping layer 170 by a transparent adhesive.

The organic light emitting diode display according to the first embodiment of the present invention may be configured such that the organic light emitting display device according to the first embodiment of the present invention is configured such that the organic thin film transistor 110, It is possible to prevent a change in the characteristics of the thin film transistor 110 and / or the organic light emitting diode 140 due to migration and penetration of hydrogen because the light is absorbed and stored in the layer HSL.

FIG. 3 is a cross-sectional view illustrating an organic light emitting display according to a second embodiment of the present invention. The organic light emitting display according to the first embodiment of the present invention further includes a buffer layer between the substrate and the hydrogen occlusion layer Respectively. Accordingly, in describing the present embodiment, the same or corresponding elements to those of the first embodiment will not be described in duplicate, and only the buffer layer will be described in the following description.

The buffer layer 101 is formed on the upper surface of the substrate 100 so as to be positioned between the substrate 100 and the hydrogen absorbing layer HSL to improve adhesion of the hydrogen absorbing layer HSL. The buffer layer 101 may be formed of an insulating material such as silicon oxide or silicon nitride, and may be formed of the same material as the gate insulating layer 111. The buffer layer 101 may also prevent diffusion of a material contained on the substrate 100 into the thin film transistor during a high temperature process during the manufacturing process of the thin film transistor.

4 is a cross-sectional view illustrating an OLED display according to a third embodiment of the present invention.

Referring to FIG. 4, the organic light emitting display according to the third embodiment of the present invention has a bottom emission structure, and includes a plurality of pixel regions P1, P2, and P3 defined in the substrate 100, A thin film transistor 110 on the hydrogen storage layer HSL, a passivation layer 120 covering the thin film transistor 110, a passivation layer 120 formed on the passivation layer 120, An anode electrode (or a first electrode) 130 connected to the thin film transistor 110 through the first electrode layer 130 and an anode electrode 130 overlapping an opening area OA of each pixel region P1, P2, And a cathode electrode (or a second electrode) 150 connected to the organic light emitting diode 140.

The hydrogen storage layer HSL is formed in the pixel circuit region of each of the pixel regions P1, P2, and P3 defined in the substrate 100. The hydrogen storage layer HSL is the same as the first embodiment of the present invention except that the hydrogen storage layer HSL is formed in the pixel circuit region on the substrate 100 in a patterned form.

The thin film transistor 110 is formed on the hydrogen storage layer HSL and includes a gate electrode GE, a gate insulating film 111, an active layer AL, an etch stopper layer ESL, a drain electrode DE, , And a source electrode (SE). The thin film transistor 110 having such a structure is the same as that of the first embodiment of the present invention except that it is formed on the hydrogen storage layer HSL. Therefore, a duplicate description thereof will be omitted.

An interlayer insulating layer 105 is interposed between the hydrogen storage layer HSL and the thin film transistor 110. The interlayer insulating layer 105 electrically isolates the hydrogen storage layer HSL and the thin film transistor 110 from each other to electrically connect the hydrogen storage layer HSL and the gate electrode GE of the thin film transistor 110, To prevent an electrical connection between them. The interlayer insulating layer 105 may be formed of an insulating material such as silicon oxide or silicon nitride, and may be formed of the same material as the gate insulating layer 111.

In addition, a buffer layer 101 (see FIG. 3) similar to the organic light emitting display of the second embodiment described above is additionally formed between the substrate 100 and the hydrogen storage layer HSL. In this case, the buffer layer 101 may be patterned in a larger area than the hydrogen storage layer HSL or may be formed in the entire region of the upper surface of the substrate 100.

Each of the passivation layer 120, the anode electrode 130, the organic light emitting diode 140 and the cathode electrode 150 is formed in the same manner as the first embodiment of the present invention, A layer 120 is formed on the substrate 100 so as to cover the thin film transistor 110 and the gate insulating film 111. The anode 130 is patterned on the passivation layer 120 which overlaps the opening area OA of each of the pixel regions P1, P2 and P3 to form contact holes CH formed in the passivation layer 120 To the source electrode SE (or the drain electrode DE) of the thin film transistor 110 through the source electrode SE. The organic light emitting diode 140 is formed in an opening region of each pixel region P1, P2, and P3 on the anode electrode 130 defined by the bank layer 135 formed on the passivation layer 120 . The cathode electrode 150 is formed on the substrate 100 so as to cover the organic light emitting diode 140 and the bank layer 135. Here, the OLED display according to a third embodiment of the present invention because the back of the light emission structure, the anode 130 is ITO, IZO, ZnO, ZnO: B, ZnO: Al, SnO _2, SnO _2: F, or In ₂ O _3, and the cathode electrode 150 is formed of a single material including a reflective material layer such as Ag, Al, Mg, Mg: Ag, LiF: Al, Layer or two or more layers.

In addition, in the organic light emitting diode display according to the second embodiment of the present invention, when the organic light emitting diode 140 emits white light, the color filter layers 160R, 160G, and 160B, And may further comprise a membrane 125.

The color filter layers 160R, 160G and 160B are patterned on the passivation layer 120 corresponding to the opening areas OA of the pixel regions P1, P2 and P3. The color filter layers 160R, 160G, and 160B may include red, green, and blue color filters corresponding to the pixel regions P1, P2, and P3. Accordingly, the color filter layers 160R, 160G, and 160B emit white light, which is emitted from the organic light emitting elements 140 of the pixel regions P1, P2, and P3 toward the substrate 100, Filter with blue light.

The planarization layer 125 is formed on the passivation layer 120 to cover the color filter layers 160R, 160G, and 160B to protect the color filter layers 160R, 160G, and 160B. The planarization layer 125 may be formed of the same insulating material as the gate insulation layer 111 or an organic insulation material such as photo acryl or benzocyclobutene (BCB).

In addition, the OLED display according to the second embodiment of the present invention may further include a protective layer 190 and a sealing member 300.

The passivation layer 190 is formed on the substrate 100 to cover the cathode electrode 150. The protective layer 190 may be omitted.

The sealing member 300 is coupled to the protective layer 190 to protect the organic light emitting diode 140 from external oxygen, moisture, and external impact. The sealing member 300 is bonded to the substrate 100 by a sealing member (not shown) formed at an edge of the substrate 100 or by an adhesive agent while being seated on the substrate 100 by a sealing member And may be attached to the protective film 190. The sealing member 300 may be formed of an organic, plastic substrate, or metal substrate.

In the OLED display according to the third embodiment of the present invention, since the hydrogen storage layer (HSL) absorbs hydrogen and stores the same, like the organic light emitting display according to the first embodiment of the present invention, It is possible to prevent a change in characteristics of the thin film transistor 110 and / or the organic light emitting element 140 due to movement and penetration.

5 and 6 are sectional views for explaining a modified embodiment of the organic light emitting diode display according to the third embodiment of the present invention. This is because the formation of the hydrogen storage layer of the OLED display according to the third embodiment of the present invention And the position is changed.

5, the hydrogen storage layer HSL may be formed on the substrate 100 so as to overlap the pixel circuit regions of the pixel regions P1, P2, and P3 defined in the substrate 100. In other words, Layer 120 may be formed in a pattern. The hydrogen absorbing layer (HSL) is formed of the same material as the hydrogen absorbing layer of the above-described embodiments and absorbs and stores hydrogen. The hydrogen absorbing layer HSL prevents internal light generated in the organic light emitting device 130 of the adjacent opening area OA and emitted toward the substrate 100 from advancing toward the thin film transistor 110, Film transistor 110 due to a photocurrent according to a change in the characteristics of the thin film transistor 110.

In addition, the OLED display according to the first modified example further includes the hydrogen storage layer (HSL) interposed between the substrate 100 and the thin film transistor 110 as shown in FIG. 4 . In this case, a first hydrogen occlusion layer is formed below the thin film transistor 110, and a second hydrogen occlusion layer HSL is formed above the thin film transistor 110. Thus, The display device may have a larger hydrogen storage capacity by the first and second hydrogen occlusion layers.

6, the hydrogen storage layer HSL may be formed in the entire region of the protective film 190 so as to cover the pixel regions P1, P2, and P3. The hydrogen absorbing layer (HSL) is formed of the same material as the hydrogen absorbing layer of the above-described embodiments and absorbs and stores hydrogen. The hydrogen storage layer HSL may be formed on the bottom surface of the encapsulation member 300 facing the protection layer 190 without being formed on the protection layer 190.

4 or 5, the organic light emitting display according to the second modified example may include the hydrogen storage layer (HSL) and / or the hydrogen storage layer (HSL) interposed between the substrate 100 and the thin film transistor 110, Or the hydrogen storage layer (HSL) formed on the passivation layer 120 in the form of a pattern. In this case, a first hydrogen occlusion layer is formed on the lower portion of the thin film transistor 110, a second hydrogen occlusion layer HSL is formed on the upper portion of the thin film transistor 110, Each of the first, second, and third hydrogen absorbing layers may be formed by the first, second, and third hydrogen absorbing layers.

FIGS. 7A to 7F are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to a first embodiment of the present invention, which is related to the method of manufacturing the organic light emitting display shown in FIG. Hereinafter, repetitive description of the repetitive portions in the materials, structures and the like of each constitution will be omitted.

First, as shown in FIG. 7A, a hydrogen storage layer HSL is formed on the substrate 100 to a predetermined thickness, and an interlayer insulation layer 105 is formed on the hydrogen storage layer HSL. Here, the hydrogen storage layer (HSL) may be formed by a known technique such as press molding or plating molding using powder composed of a hydrogen storage alloy.

Alternatively, a buffer layer 101 (see FIG. 3) may be formed on the upper surface of the substrate 100 before the process of forming the hydrogen storage layer HSL.

7B, a gate electrode GE is formed on the interlayer insulating film 105 corresponding to a pixel circuit region of each pixel region P1, P2, and P3 defined on the substrate 100, The gate insulating film 111, the active layer AL, the etch stopper layer ESL, the drain electrode DE and the source electrode SE are formed.

The process of forming the thin film transistor 100 will be described in detail.

A gate electrode GE is patterned on the interlayer insulating film 105 and a gate insulating film 111 is formed on the interlayer insulating film 105 including the gate electrode GE. That is, the gate electrode GE is formed by depositing a gate electrode material on the interlayer insulating layer 105 by sputtering, forming a photoresist mask pattern on the gate electrode material, , Development, and etching, which are sequentially performed, and patterned by a patterning process.

The gate insulating layer 111 may be formed on the entire surface of the interlayer insulating layer 105 including the gate electrode GE by PECVD.

Then, an active layer AL is pattern-formed on the gate insulating layer 111 overlying the gate electrode GE.

The active layer AL may be formed by a deposition process for forming an amorphous oxide semiconductor on the gate insulating layer 111 using a sputtering method or a metal organic chemical vapor deposition (MOCVD) method, a deposition process using a furnace or a rapid thermal process A crystallization process for crystallizing the amorphous oxide semiconductor by a high temperature heat treatment process at a temperature of about 650 ° C. or more using a thermal process (RTP), and a patterning process for removing an oxide semiconductor formed in a region other than a region overlapping the gate electrode As shown in FIG.

Alternatively, the active layer AL may be formed by sputtering, metal organic chemical vapor deposition (MOCVD), or chemical vapor deposition (CVD). Based semiconductor.

Then, an etch stopper layer (ESL) is patterned on the central region of the active layer AL except for one side and the other side of the active layer AL. That is, the etch stopper layer ESL is formed by entirely forming the etch stopper layer material layer on the active layer AL and the gate insulating layer 111, After forming a mask pattern on the layer material layer, an etch stopper layer material is removed through an etching process using the mask pattern as a mask to form an etch stopper layer (ESL) on the central region of the active layer AL And both sides of the active layer 116 not covered by the mask pattern are made conductive so that a drain region and a source region are formed in both side regions of the active layer 116.

Then, the mask pattern is removed.

Then, the drain electrode DE and the source electrode SE, which are connected to the drain region and the source region of the active layer AL, respectively, are pattern-formed. That is, the drain electrode DE and the source electrode SE are formed on the substrate 100 including the gate insulating film 111, the active layer AL, and the etch stopper layer ESL. And forming a photoresist mask pattern on the source / drain electrode material, and forming a photoresist mask pattern on the etch stopper layer (ESL) by a patterning process that sequentially performs exposure, development, and etching processes, And may be pattern-formed so as to be connected to each of the source region and the drain region of the active layer AL.

Then, as shown in FIG. 7C, a passivation layer 120 is formed on the entire surface of the substrate 100 including the thin film transistor 110.

A contact hole exposing a part of the source electrode SE of the thin film transistor 110 formed in each pixel region P1, P2, and P3 through a contact hole forming process for removing a part of the passivation layer 120, Thereby forming a hole CH.

Next, an anode electrode material is formed on the passivation layer 120 including the contact hole CH, and then the entire region of each pixel region P1, P2, and P3 is overlapped with the thin film transistor 110 An anode electrode 130 connected to the source electrode SE of the thin film transistor 110 is patterned through a contact hole CH and then a bank which defines an opening region of each pixel region P1, A layer 135 is patterned on the passivation layer 120.

The anode electrode 130 may be formed by a deposition process of forming an anode electrode material including a reflective material or a transparent conductive material and a reflective material on the passivation layer 120. A photoresist mask pattern is formed on the anode electrode material Then, a patterning process for sequentially performing exposure, development, and etching processes is performed so as to be connected to the source electrode SE of the thin film transistor 110 through the contact hole CH, The pattern can be formed in the entire area.

The bank layer 130 may be formed by patterning an insulating material on the anode 130 and the passivation layer 120 and then removing an insulating material from the opening regions of the pixel regions P1, As shown in FIG.

7D, organic light emitting devices 140 are formed on the anode electrodes 130 exposed in the pixel regions P1, P2, and P3 defined by the bank layer 130 . The organic light emitting device 140 may include a process of forming a hole injection layer on the anode 130, a process of forming a hole transport layer on the hole injection layer, a process of forming an organic light emitting layer on the hole transport layer, A step of forming an electron transporting layer on the organic light emitting layer, and a step of forming an electron injecting layer on the electron transporting layer. Here, the step of forming one or more layers of the hole injecting layer, the hole transporting layer, the electron transporting layer, and the electron injecting layer may be omitted.

A cathode electrode 150 made of a transparent conductive material is formed on the entire surface of the substrate 100 including the organic light emitting diode 140 and the bank layer 130. The cathode electrode 150 may be formed by sputtering, metal organic chemical vapor deposition (MOCVD), or chemical vapor deposition (CVD) in accordance with a transparent conductive material.

Then, as shown in FIG. 7E, a first insulating layer 161 made of an insulating material is formed on the cathode electrode 150.

Next, color filter layers 160R, 160G, and 160B are patterned on the first insulating layer 161 corresponding to the opening regions of the pixel regions P1, P2, and P3 overlapping the organic light emitting diode 140 . The color filter layers 160R, 160G, and 160B may be formed of red, green, and blue color filter materials corresponding to the pixel regions P1, P2, and P3. Each of the red, green, and blue color filter materials is pattern-formed in the entire area of each pixel region P1, P2, and P3. The color filter layers 160R, 160G, and 160B may be formed by a printing process or a printing process using a mask.

Next, a second insulating layer 163 is formed on the first insulating layer 161 on which the color filter layers 160R, 160G, and 160B are formed.

Next, a capping layer 170 may be further formed on the second insulating layer 163.

Then, as shown in FIG. 7F, a sealing member 200 is formed on the capping layer 170. The sealing member 200 according to an exemplary embodiment may be formed of a sealing layer in which at least one of the inorganic material and the organic material is formed as a single layer or multiple layers. The sealing member 200 according to another example is made of a transparent substrate and can be bonded to the capping layer 170 by a transparent adhesive.

In the method of manufacturing an organic light emitting diode display according to the first embodiment of the present invention, when the organic light emitting layer of the organic light emitting diode 140 is formed of a material emitting color light, The first insulating layer 161, the color filter layers 160R, 160G, and 160B, and the second insulating layer 163 may be omitted.

FIGS. 8A to 8E are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to a second embodiment of the present invention, which relates to the method of manufacturing the organic light emitting display shown in FIG. Hereinafter, repetitive description of the repetitive portions in the materials, structures and the like of each constitution will be omitted.

First, as shown in Fig. 8A, the above-described hydrogen occlusion layer (HSL) is pattern-formed on the pixel circuit region PCA of each pixel region P1, P2, and P3 defined on the substrate 100 , An interlayer insulating film 105 is formed on the hydrogen storage layer (HSL) and the substrate (100).

8B, a gate electrode GE, a gate insulating film 111, an active layer AL, and an etch stopper layer (not shown) are formed on the interlayer insulating film 105 overlapping the hydrogen storage function layer HSL. (ESL), a drain electrode (DE), and a source electrode (SE). The manufacturing process of the thin film transistor 110 is the same as the manufacturing method of the organic light emitting diode display according to the first embodiment of the present invention, and a duplicate description thereof will be omitted.

Then, as shown in FIG. 8C, a passivation layer 120 is formed on the entire surface of the substrate 100 including the thin film transistor 110.

Next, the above-described color filter layers 160R, 160G, and 160B are pattern-formed on the passivation layer 120 corresponding to the opening areas OA of the pixel regions P1, P2, and P3.

Next, as shown in FIG. 8D, a planarization film 125 is formed on the color filter layers 160R, 160G, and 160B and the passivation layer 120. Then, as shown in FIG.

The source electrode of the thin film transistor 110 formed in each pixel region P1, P2, and P3 is formed through a contact hole forming process for removing a part of the flattened film 125 on the passivation layer 120 SE to expose a part of the contact hole CH.

Next, an anode electrode material is formed on the planarizing film 125 including the contact hole CH and then an opening area OA of each pixel region P1, P2, and P3 is formed so as to overlap the thin film transistor 110, And the anode electrode 130 connected to the source electrode SE of the thin film transistor 110 is pattern-formed through the contact hole CH.

The pixel circuit region PCA of each of the pixel regions P1, P2, and P3 and the bank layer which overlaps the edge portion of the anode electrode 130 and defines the opening regions of the pixel regions P1, P2, (135) is patterned on the planarizing film (125).

8E, the organic light emitting diode 140 is formed on the anode electrode 130 exposed to the pixel regions P1, P2, and P3 defined by the bank layer 130 .

A cathode electrode 150 made of a transparent conductive material is formed on the entire surface of the substrate 100 including the organic light emitting diode 140 and the bank layer 130.

Next, a protective layer 190 is formed on the cathode electrode 150.

Next, a sealing member 300 is formed on the protective film 190. The sealing member 300 may be attached to the substrate 100 by a sealing member (not shown) formed at the edge of the substrate 100 or may be attached to the substrate 100 by the sealing member. The protective film 190 may be formed of a metal. The sealing member 300 may be formed of an organic, plastic substrate, or metal substrate.

In the method of manufacturing an organic light emitting display according to the second embodiment of the present invention, when the organic light emitting layer of the organic light emitting diode 140 is formed of a material that emits color light, The flat film 125 and the color filter layers 160R, 160G, and 160B may be omitted. In this case, the anode electrode 130 is pattern-formed on the passivation layer 120 to be connected to the source electrode SE of the thin film transistor 110 through the contact hole CH formed in the passivation layer 120 And the bank layer 135 is also patterned on the passivation layer 120 so as to overlap the pixel circuit region PCA of each pixel region P1, P2, and P3 and the edge portion of the anode electrode 130 And defines the opening regions of the pixel regions P1, P2, and P3.

FIGS. 9A to 9C are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to a third embodiment of the present invention, which relates to the method of manufacturing the organic light emitting display shown in FIG. Hereinafter, repetitive description of the repetitive portions in the materials, structures and the like of each constitution will be omitted.

9A, a gate electrode GE, a gate insulating film 111, and a gate insulating film are formed on a pixel circuit region PCA of each pixel region P1, P2, and P3 defined on the substrate 100, A thin film transistor 110 including an active layer AL, an etch stopper layer (ESL), a drain electrode DE and a source electrode SE is formed. Since the process of forming the thin film transistor 110 is the same as the method of manufacturing the organic light emitting display according to the first embodiment of the present invention except that the process of forming the thin film transistor 110 is formed on the top surface of the substrate 100, Is omitted.

Next, a passivation layer 120 is formed on the entire surface of the substrate 100 including the thin film transistor 110.

Then, as shown in FIG. 9B, the above-described hydrogen storage layer (HSL) is patterned on the passivation layer 120 superimposed on the thin film transistor 110.

Next, the above-described color filter layers 160R, 160G, and 160B are pattern-formed on the passivation layer 120 corresponding to the opening areas OA of the pixel regions P1, P2, and P3.

Then, as shown in FIG. 9C, a planarizing film 125 is formed on the color filter layers 160R, 160G, and 160B and the passivation layer 120. Then, as shown in FIG.

The source electrode of the thin film transistor 110 formed in each pixel region P1, P2, and P3 is formed through a contact hole forming process for removing a part of the flattened film 125 on the passivation layer 120 SE to expose a part of the contact hole CH.

Next, an anode electrode material is formed on the planarizing film 125 including the contact hole CH and then an opening area OA of each pixel region P1, P2, and P3 is formed so as to overlap the thin film transistor 110, And the anode electrode 130 connected to the source electrode SE of the thin film transistor 110 is pattern-formed through the contact hole CH.

The pixel circuit region PCA of each of the pixel regions P1, P2, and P3 and the bank layer which overlaps the edge portion of the anode electrode 130 and defines the opening regions of the pixel regions P1, P2, (135) is patterned on the planarizing film (125).

The organic light emitting diode 140 is formed on the anode electrode 130 exposed in each of the pixel regions P1, P2, and P3 defined by the bank layer 130. Referring to FIG.

A cathode electrode 150 made of a transparent conductive material is formed on the entire surface of the substrate 100 including the organic light emitting diode 140 and the bank layer 130.

Next, a protective layer 190 is formed on the cathode electrode 150.

Next, the encapsulation member 300 described above is formed on the protective film 190.

In the method of manufacturing an organic light emitting display according to the third embodiment of the present invention, when the organic light emitting layer of the organic light emitting diode 140 is formed of a material that emits color light, The planarization layer 125 and the color filter layers 160R, 160G, and 160B formed on the passivation layer 120 may be omitted, as in the method of fabricating the organic light emitting display device according to the embodiment.

In addition, the method of fabricating an organic light emitting display according to the third embodiment of the present invention is characterized in that before the formation of the thin film transistor 110, as shown in FIG. 8B, The step of patterning the hydrogen storage layer HSL on the upper surface of the substrate 100 corresponding to the pixel circuit area PCA and forming the interlayer insulating film 105 covering the hydrogen storage layer HSL Can be performed.

FIGS. 10A and 10B are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to a fourth embodiment of the present invention, which relates to a method of manufacturing the organic light emitting display shown in FIG. Hereinafter, repetitive description of the repetitive portions in the materials, structures and the like of each constitution will be omitted.

10A, a gate electrode GE, a gate insulating film 111, and a gate insulating film are formed on a pixel circuit region PCA of each pixel region P1, P2, and P3 defined on the substrate 100, A thin film transistor 110 including an active layer AL, an etch stopper layer (ESL), a drain electrode DE and a source electrode SE is formed. Since the process of forming the thin film transistor 110 is the same as the method of manufacturing the organic light emitting display according to the first embodiment of the present invention except that the process of forming the thin film transistor 110 is formed on the top surface of the substrate 100, Is omitted.

In addition, as shown in FIG. 8B, the upper surface of the substrate 100 corresponding to the pixel circuit region PCA of each of the pixel regions P1, P2, and P3 may be formed before the thin film transistor 110 is formed A step of patterning the hydrogen absorbing layer HSL and forming an interlayer insulating film 105 covering the hydrogen absorbing layer HSL may be performed.

Next, a passivation layer 120 is formed on the entire surface of the substrate 100 including the thin film transistor 110.

Next, the above-described color filter layers 160R, 160G, and 160B are pattern-formed on the passivation layer 120 corresponding to the opening areas OA of the pixel regions P1, P2, and P3.

Next, a planarization layer 125 is formed on the color filter layers 160R, 160G, and 160B or the color filter layers 160R, 160G, and 160B and the passivation layer 120, respectively.

The source electrode of the thin film transistor 110 formed in each pixel region P1, P2, and P3 is formed through a contact hole forming process for removing a part of the flattened film 125 on the passivation layer 120 SE to expose a part of the contact hole CH.

Next, an anode electrode material is formed on the planarizing film 125 including the contact hole CH and then an opening area OA of each pixel region P1, P2, and P3 is formed so as to overlap the thin film transistor 110, And the anode electrode 130 connected to the source electrode SE of the thin film transistor 110 is pattern-formed through the contact hole CH.

The pixel circuit region PCA of each of the pixel regions P1, P2, and P3 and the bank layer which overlaps the edge portion of the anode electrode 130 and defines the opening regions of the pixel regions P1, P2, (135) is patterned on the planarizing film (125).

The organic light emitting diode 140 is formed on the anode electrode 130 exposed in each of the pixel regions P1, P2, and P3 defined by the bank layer 130. Referring to FIG.

A cathode electrode 150 made of a transparent conductive material is formed on the entire surface of the substrate 100 including the organic light emitting diode 140 and the bank layer 130.

Next, a protective layer 190 is formed on the cathode electrode 150.

The sealing member 300 may be formed on the hydrogen storage layer HSL after the hydrogen storage layer HSL is formed on the protective layer 190 or the hydrogen storage layer HSL may be formed on the hydrogen storage layer HSL. The sealing member 300 is formed on the protective film 190.

In the method of manufacturing an organic light emitting display according to the fourth embodiment of the present invention, when the organic light emitting layer of the organic light emitting diode 140 is formed of a material emitting color light, The planarization layer 125 and the color filter layers 160R, 160G, and 160B formed on the passivation layer 120 may be omitted, as in the method of fabricating the organic light emitting display device according to the embodiment.

In addition, the method of manufacturing an organic light emitting diode display according to the fourth embodiment of the present invention is characterized in that, before the formation of the thin film transistor 110, as shown in FIG. 8B, The step of patterning the hydrogen storage layer HSL on the upper surface of the substrate 100 corresponding to the pixel circuit area PCA and forming the interlayer insulating film 105 covering the hydrogen storage layer HSL Can be performed.

Further, between the formation of the passivation layer 120 and the formation of the planarization layer 125, the hydrogen storage layer (HSL) described above is formed on the passivation layer 120, which overlaps the thin film transistor 110 A step of forming a pattern can be further performed.

The organic light emitting display according to embodiments of the present invention and the method of fabricating the same according to the embodiments of the present invention include the hydrogen storage layer (HSL) formed to overlap with the thin film transistor (110) It is possible to prevent the characteristics of the thin film transistor 110 and / or the organic light emitting diode 140 from being changed.

In addition, in the organic light emitting diode display and the method of manufacturing the same according to the embodiments of the present invention, the gate electrode of the thin film transistor is located below the active layer. However, the present invention is not limited thereto, The gate electrode may be located on top of the active layer.

In addition, the positions of the anode electrode (or the first electrode) and the cathode electrode (or the second electrode) may be switched according to the front emission structure or the back emission structure of the OLED display. That is, the OLED display may be classified into a cathode common type and an anode common type. Here, in the cathode common type, the cathode electrode is used as a common electrode to which a low potential power source (or a ground power source) is applied, and the anode electrode is connected to a source electrode or a drain electrode of the thin film transistor. In the anode common type, the anode electrode is used as a common electrode to which driving power is applied, and the cathode electrode is connected to a source electrode or a drain electrode of the thin film transistor.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents. Will be clear to those who have knowledge of. Therefore, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention.

100: substrate 101: buffer layer
105: interlayer insulating film 110: thin film transistor
111: gate insulating film 120: passivation layer
130: anode electrode (or first electrode) 135: bank layer
140: organic light emitting device 150: cathode electrode (or second electrode)
160R, 160G, 160B: color filter layer 170: capping layer
190: protective film 200, 300: sealing member

Claims (15)

A thin film transistor formed on a substrate;
A passivation layer covering the thin film transistor;
A first electrode connected to the thin film transistor through the passivation layer;
An organic light emitting device formed on the first electrode;
A second electrode connected to the organic light emitting device; And
And a hydrogen storage layer formed on the substrate so as to at least partially overlap the thin film transistor and absorbing and storing hydrogen generated in at least one of the thin film transistor and the passivation layer. The method according to claim 1,
Further comprising an interlayer insulating film for electrically insulating the hydrogen storage device and the thin film transistor,
Wherein the hydrogen absorbing layer is sandwiched between the interlayer insulating film and the substrate. 3. The method of claim 2,
And a buffer layer interposed between the hydrogen storage layer and the substrate. The method according to claim 1,
A protective film covering the second electrode; And
And a sealing member covering the protective film,
Wherein the substrate has a plurality of pixel regions including a pixel circuit region and an opening region,
Wherein the hydrogen absorbing layer is formed on a top surface of the protective film or on a bottom surface of the encapsulating member facing the protective film. 4. The method according to any one of claims 1 to 3,
Wherein the substrate has a plurality of pixel regions including a pixel circuit region and an opening region,
Wherein the hydrogen occlusion layer is formed on an upper surface of the substrate so as to overlap the pixel circuit region excluding the opening region of each of the plurality of pixel regions. 4. The method according to any one of claims 1 to 3,
Wherein the substrate has a plurality of pixel regions including a pixel circuit region and an opening region,
Wherein the hydrogen occlusion layer is formed on the passivation layer so as to overlap the pixel circuit region excluding the opening region of each of the plurality of pixel regions. 5. The method according to any one of claims 1 to 4,
Wherein the hydrogen absorbing layer comprises a single layer selected from the group consisting of Fe, Ni, Ti, Fe: Ni, Ti: Fe, La: Ni, La: Ni: Al, Mg: Ni, Wherein the organic light emitting display comprises at least two layers. Forming a thin film transistor on a substrate;
Forming a passivation layer covering the thin film transistor;
Forming a first electrode through the passivation layer and connected to the thin film transistor;
Forming an organic light emitting device on the first electrode;
Forming a second electrode connected to the organic light emitting device; And
And forming a hydrogen occlusion layer for absorbing and storing hydrogen generated in at least one of the thin film transistor and the passivation layer on the substrate at least partially overlapped with the thin film transistor. ≪ / RTI > 9. The method of claim 8,
Wherein the hydrogen occlusion layer is formed on an upper surface of the substrate and is positioned below the thin film transistor. 9. The method of claim 8,
Wherein the substrate has a plurality of pixel regions including a pixel circuit region and an opening region,
Wherein the hydrogen occlusion layer is formed on an upper surface of the substrate so as to overlap the pixel circuit region excluding the opening region of each of the plurality of pixel regions. 9. The method of claim 8,
Wherein the substrate has a plurality of pixel regions including a pixel circuit region and an opening region,
Wherein the hydrogen occlusion layer is formed on the passivation layer so as to overlap the pixel circuit region excluding the opening region of each of the plurality of pixel regions. 9. The method of claim 8,
Forming a protective film on the second electrode; And
And forming a sealing member on the protective film,
Wherein the substrate has a plurality of pixel regions including a pixel circuit region and an opening region,
Wherein the hydrogen occlusion layer is formed on a top surface of the passivation layer or on a bottom surface of the sealing member facing the passivation layer. 11. The method according to claim 9 or 10,
Further comprising the step of forming an interlayer insulating film covering the hydrogen absorbing layer on the substrate,
Wherein the thin film transistor is formed on the interlayer insulating film. 14. The method of claim 13,
And forming a buffer layer on an upper surface of the substrate,
Wherein the buffer layer is formed between the substrate and the hydrogen occlusion layer. 13. The method according to any one of claims 8 to 12,
Wherein the hydrogen absorbing layer comprises a single layer selected from the group consisting of Fe, Ni, Ti, Fe: Ni, Ti: Fe, La: Ni, La: Ni: Al, Mg: Ni, Wherein the organic light emitting display device comprises at least two layers.

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