CN103137536B - 半导体加工系统 - Google Patents

半导体加工系统 Download PDF

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CN103137536B
CN103137536B CN201210491200.2A CN201210491200A CN103137536B CN 103137536 B CN103137536 B CN 103137536B CN 201210491200 A CN201210491200 A CN 201210491200A CN 103137536 B CN103137536 B CN 103137536B
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reaction chamber
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crystal wafer
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曼弗雷德·恩格尔哈德特
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Abstract

一种半导体加工系统，包括反应腔，该反应腔具有上壁和下壁。固定组件被设置在反应腔中以使得该半导体衬底面向反应腔的下壁的方式固定半导体衬底。

Description

半导体加工系统
技术领域
本发明涉及半导体加工系统、半导体加工设备以及半导体衬底加工方法。
背景技术
在半导体加工技术中膜或层经常被沉积到半导体衬底的表面上，随后通过已知的方法被选择性地去除。特别是在剥离工艺中，膜的去除可能导致晶圆上的微粒、缺陷、薄片等。减少甚至消除该微粒、缺陷、薄片等的沉积是很重要的，因为它们是制造在半导体晶圆上的电子器件或电路的缺陷和故障的潜在源头。
发明内容
为了解决上述问题，根据本发明的一个方面，提供了一种半导体加工系统，包括：反应腔，包括上壁和下壁；固定组件，被设置在反应腔中以使得半导体衬底面向所述反应腔的下壁的方式固定所述半导体衬底。
根据本发明的另一方面，提供了一种半导体加工设备，包括：加工腔；以及固定组件，被设置在所述加工腔中以固定半导体衬底，使得所述半导体衬底的外露表面可以被加工；其中所述半导体加工设备被配置为使得在所述半导体加工设备的直立安置方式中，所述半导体衬底的所述外露表面指向下。
根据本发明的又一方面，提供了一种半导体衬底加工方法，所述方法包括：提供包括上壁和下壁的反应腔以及固定待加工的半导体衬底的固定组件；将所述半导体衬底以面向所述反应腔的下壁的方式设置在所述固定组件上；以及在所述半导体衬底面向所述反应腔的所述下壁时加工所述半导体衬底。
附图说明
附图被包括以提供对实施方式的更进一步理解并且附图结合在本说明书中并构成了本说明书的一部分。附图说明了实施方式，并且与描述一起用于解释实施方式的原理。其他实施方式和实施方式许多预期的优点将容易认识到，因为通过对以下详细描述的参考，它们变得更好理解。附图的元素是不必须互相相对成比例的。相似的参考数字指定相应相似的部分。
图1示出根据实施方式的半导体加工系统的示意性横截面侧视图表示；
图2示出根据实施方式的半导体加工系统的示意性横截面侧视图表示；
图3示出根据实施方式的半导体加工系统的示意性横截面侧视图表示；
图4示出根据实施方式的半导体加工系统的示意性横截面侧视图表示；
图5示出根据实施方式的半导体加工系统的示意性横截面侧视图表示；
图6示出说明根据实施方式的半导体衬底加工方法的流程图；以及
图7a和7b示出了用于说明通过颠倒晶圆去除加工的材料的实施方式的示意性横截面侧视图表示。
具体实施方式
现参考附图来描述本发明的方面和实施方式，其中通篇相似的参考数字通常被用于指代相似的元素。在以下描述中，为了提供对实施方式的一个或多个方面的全面理解，为了的解释目的提出了大量详细细节。然而，对于本领域的普通技术人员来说显而易见的是，可以以更少程度的详细细节来实行实施方式的一个或多个方面。在其他情况下，为了促进对实施方式的一个或多个方面的描述，已知的结构和元件以示意性形式示出。需要理解的是，在不偏离本发明的范围的条件下，可以采用其他实施方式并且可以进行结构或逻辑的改变。还需指出的是，视图不是按比例的或者是不需要按比例的。
此外，虽然实施方式的特定的特征或方面可以只关于几个实施中的一个来公开，该特征或方面可以与其他实施方式的一个或更多的其他特征或方面结合，因为其对于任何给出或特定的应用可以是需要或有利的。此外，对于术语“包括”，“具有”，“带有”或它们的其他变体使用在详细描述或权利要求书中的程度，该术语旨在以与术语“包含”相同的方式包括。术语“耦接”和“连接”连同派生词一起都可以使用。需要理解的是，这些术语可以用于表示两个元件合作或相互作用，而不管它们是否直接物理或电气的接触或它们没有直接互相接触。同样，术语“示例性”仅意味着示例，而不意味着最好的或最佳的。因此，以下详细描述没有限制的意思，而且本发明的范围由所附权利要求书限定。
这里描述的实施方式包括加工设备和加工反应器。需要理解的是，这些加工设备和加工反应器实际上含有本领域已知的所有种类的用于对半导体衬底、半导体晶圆、半导体芯片和半导体晶粒进行任何种类加工的装置和器件。特别地，该设备应当在本文中提及，在该设备中所有种类的半导体衬底都可以被氧化、蚀刻、以任何种类的层材料覆膜、或以热、压力和湿度处理、或以高温加工退火。更特别地，那些设备是特别重要的，在该设备中通过化学气相沉积（CVD）、等离子体强化化学气相沉积（PECVD）、真空镀膜以及在射频激发的协助下的这些沉积方法的任意一种，半导体衬底被覆以所有种类的层。
参考图1，示出了根据第一方面的半导体加工系统的示意性横截面侧视图表示。半导体加工系统10包括：反应腔1，该反应腔1包括上壁1A和下壁1B；以及固定组件2，设置在反应腔1中以固定半导体衬底3，使得衬底3面向反应腔1的下壁1B。
加工半导体衬底的方法可以以术语“颠倒晶圆加工”描述，颠倒晶圆加工将减少甚至消除微粒、缺陷、薄片等在半导体衬底上的沉积。由于简单的重力，微粒、缺陷和薄片将不倾向于留在半导体衬底的表面而将掉落，使得它们可以被反应腔的排出口方向上的任何种类的流动加工气体或等离子体带走。如随后将示出的，几个另外的实施方式可以协助去除微粒、缺陷和薄片的加工。
根据半导体加工系统10的实施方式，半导体加工系统10被配置为使得，在为了其目的用途反应腔1处于直立安置方式下，半导体衬底面向反应腔的下壁，具体地，半导体衬底外露表面向下指向至反应腔的下壁。根据其实施方式，固定组件设置在反应腔的上半部。
根据半导体加工系统10的实施方式，上壁1A包括进入口，下壁1B包括排出口。进入口可以连接至加工气体储存器而排出口可以连接至排气泵。
根据半导体加工系统10的实施方式，等离子体产生单元（未示出）耦接至反应腔。更详细地，等离子体产生单元耦接至在反应腔1的上壁1A形成的进入口。
根据半导体加工系统10的实施方式，固定组件2包括晶圆卡盘。晶圆卡盘可以按照本领域内已知的而构造，具体地，通过在晶圆卡盘的表面包括多个通向开口的通导管使得，通过对通导管施加真空导体晶圆可以吸附在晶圆卡盘的表面上。
根据半导体加工系统10的实施方式，射频单元连接至固定组件。更详细地，其可以连接至固定组件使得在射频单元和固定组件之间的电导线通过反应腔1的上壁1A中的开口馈入。此外，固定组件2可以包括将半导体衬底3固定在其上的第一主表面和与第一主表面相对的第二主表面，其中射频产生单元连接至固定组件的第二主表面。
根据半导体加工系统10的实施方式，该系统还包括分散从半导体衬底3释放的材料碎片或微粒的磁体。磁体可以设置在反应腔外。此外，磁体可以被设置为使得磁体的一个磁极（N或S）面向半导体衬底3的外露表面。
第二方面涉及一种半导体加工设备，包括：加工腔；固定组件，设置在加工腔中以固定半导体，使得半导体衬底的外露表面可以被加工，其中加工设备被配置为使得在加工设备的直立安置方式下，半导体衬底的外露表面指向下。
如以上联系第一方面所描述的，第二方面的实施方式可以联系任何特征或实施方式形成。
在以下将描述半导体加工系统的另外的实施方式。在以上联系图1描述的并且带有相同的参考数字的那些特征的描述将不再重复。
参考图2，示出了根据实施方式的半导体加工系统的示意性横截面侧视图表示。半导体加工系统20包括在反应腔1的上壁1A中的进入口1A.1以及在下壁1B中的排出口1B.1，该进入口与加工气体储存器（未示出）相连，该排出口与排气泵（未示出）相连。此外设置有射频单元4，该射频信号单元用于产生射频信号并且通过电连接线4.1将射频信号馈入固定组件2。优选地，固定组件2包括晶圆卡盘，电连接线4.1通过反应腔1的上壁1A的开口1A.2馈入。硅晶圆3被示出为具有待去除（例如，通过蚀刻）的结构3.1。详细的示例将随后示出。
参考图3，示出了根据实施方式的半导体加工系统的示意性横截面侧视图表示。除图2中示出的半导体加工系统之外，半导体加工系统30还包括连接至反应腔1的等离子体产生单元5。在等离子体产生单元5中，等离子体通过微波激发或通过变压器（即，电感性地）耦接的等离子体产生器产生，并且通过在反应腔1的上壁1A中的额外进入口1A.3送入反应腔1中。
参考图4，示出了根据实施方式的半导体加工系统的示意性横截面侧视图表示。图4的半导体加工系统40与图3中所示的半导体加工系统的不同之处仅在于省略了射频单元4。改为将固定组件2直接机械地固定在上壁1A。
参考图5，示出了根据实施方式的半导体加工系统的示意性横截面侧视图表示。图5的半导体加工系统50与图4中所示的半导体加工系统的不同之处仅在于磁体6设置在反应腔1下。磁体6可以是永久磁体或电磁体。磁体6的目的是从半导体晶圆3分散微粒从而使它们可以容易地被吸出反应腔1。在图5的实施方式中磁体6的北磁极面向半导体衬底3。
参考图6，示出了说明根据实施方式的半导体衬底加工方法的流程图。方法60包括提供包括上壁和下壁的反应腔和固定待加工半导体衬底的固定组件（61），以及将半导体衬底以面向反应腔的下壁的方式放置在固定组件上（62）。
根据方法60的实施方式，方法60还包括将加工气体送入反应腔中。
根据方法60的实施方式，方法60还包括将射频信号馈入反应腔中，特别是至固定组件。
根据方法60的实施方式，方法60还包括将等离子体气体送入反应腔中。
根据方法60的实施方式，方法60还包括将构造从半导体衬底的外露表面去除，特别是通过各向同性蚀刻或灰化。
根据方法60的实施方式，方法60还包括通过反应腔的排出口吸出材料或介质。
根据方法60的实施方式，设置反应腔使得固定组件设置在反应腔的上半部。
图7a和图7b示出说明通过颠倒晶圆加工去除结构或材料的实例的示意性横截面侧视图表示。图7a示出了带有待图案化的膜3.1的硅晶圆3。为了该目的，有机膜3.2被沉积在膜3.1上并且被随后被结构化，以便形成掩模图案。因此如由箭头表示的，硬掩膜3.3沉积在有机膜3.2和膜3.1上，生成图7a中所示的中间产物。此后，需要去除悬垂构造，其最好如在本应用的方面中描述的那样通过颠倒晶圆加工执行。去除可以通过各向同性蚀刻或灰化执行。图7b以构造硬掩膜3.3（如，Ni）的形式示出了结果，从而使膜3.1可以在此外的步骤中图案化。
虽然本发明关于一个或更多的执行方式被示出和描述，但是在不偏离所附权利要求的精神和范围的条件下，可以对说明的示例进行修改和/或变型。特别地，对于由以上描述的部件或构造（集合、器件、电路、系统等）进行的多种功能，除非另外表明，用于描述该部件的术语（包括对“含义”的参考）意在对应执行所描述部件的特定功能的任何部件或构造（如功能上相等），即使构造上不等于公开构造，该公开构造执行本文说明的本发明示例性执行方式中的功能。

Claims (14)

1.一种半导体加工系统，包括：
反应腔，包括上壁和下壁；
晶圆卡盘，被设置在反应腔中，并被配置为以使得半导体晶圆面向所述反应腔的下壁的方式固定所述半导体晶圆；以及
耦接至所述反应腔的等离子体产生单元，其中，所述等离子体产生单元位于所述反应腔外，其中，所述等离子体产生单元被配置为在所述反应腔外生成等离子体，以通过所述反应腔的外壁上的入口将所述等离子体提供到所述反应腔。
2.根据权利要求1所述的半导体加工系统，其中，所述上壁包括进入口，所述下壁包括排出口。
3.根据权利要求2所述的半导体加工系统，其中，所述进入口连接至加工气体储存器。
4.根据权利要求2所述的半导体加工系统，其中，所述排出口连接至排气泵。
5.根据权利要求1所述的半导体加工系统，还包括连接至所述晶圆卡盘的射频单元。
6.根据权利要求5所述的半导体加工系统，还包括在所述射频单元和所述晶圆卡盘之间的电连接线，所述电连接线通过在所述反应腔的上壁中的开口馈入。
7.根据权利要求1所述的半导体加工系统，还包括磁体，以分散从所述半导体晶圆释放的材料碎片或微粒。
8.根据权利要求7所述的半导体加工系统，其中，所述磁体被设置在所述反应腔外。
9.一种半导体加工设备，包括：
加工腔；以及
晶圆卡盘，被设置在所述加工腔中，并被配置为固定半导体晶圆，使得所述半导体晶圆的外露表面可以被加工；
其中所述半导体加工设备被配置为使得在所述半导体加工设备的直立安置方式中，所述半导体晶圆的所述外露表面指向下，
其中，晶圆卡盘包括将所述半导体晶圆固定在其上的第一主表面以及与所述第一主表面相对的第二主表面，其中所述第二主表面耦接至第一射频单元；以及
耦接至所述加工腔的等离子体产生单元，其中，所述离子体产生单元位于所述加工腔外，其中，所述离子体产生单元被配置为在所述加工腔外生成等离子体，以通过所述加工腔的外壁上的入口将所述等离子体提供到所述加工腔。
10.根据权利要求9所述的半导体加工设备，其中，
所述加工腔包括上壁和相对的下壁，以及
进入口形成在所述上壁中，排出口形成在所述下壁中。
11.根据权利要求10所述的半导体加工设备，其中，所述进入口连接至加工气体储存器。
12.根据权利要求10所述的半导体加工设备，其中，所述排出口连接至排气泵。
13.根据权利要求9所述的半导体加工设备，还包括磁体，以分散从所述半导体晶圆的所述外露表面释放的材料碎片或微粒的方式设置。
14.根据权利要求13所述的半导体加工设备，其中，所述磁体的一个磁极面向所述半导体晶圆。
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