CN103137466B - The minimizing technology of silicon nitride in deep groove device manufacture process - Google Patents
The minimizing technology of silicon nitride in deep groove device manufacture process Download PDFInfo
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- CN103137466B CN103137466B CN201110377092.1A CN201110377092A CN103137466B CN 103137466 B CN103137466 B CN 103137466B CN 201110377092 A CN201110377092 A CN 201110377092A CN 103137466 B CN103137466 B CN 103137466B
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Abstract
The invention discloses the minimizing technology of silicon nitride in a kind of deep groove device manufacture process, comprise step: adopt OF mode, with deionized water, preliminary treatment is carried out to silicon chip; Silicon chip is immersed in phosphoric acid groove and carries out etching processing silicon nitride is removed completely.The inventive method is by before being immersed in phosphoric acid groove by silicon chip, increase a pretreated step, the bubble be formed at bottom deep trench can all be got rid of by the deionized water in pre-treatment step, thus bubble can be avoided in follow-up etching processing to disturb the reaction of silicon nitride and water, finally can remove the silicon nitride of silicon chip surface completely, solve silicon nitride residue problem, thus can product yield be improved.
Description
Technical field
The present invention relates to a kind of minimizing technology of silicon nitride, particularly relate to the minimizing technology of silicon nitride in a kind of deep groove device manufacture process.
Background technology
Deep trench (DeepTrench) all can be used in a lot of semiconductor device, such as super junction (SuperJunction, SJ), dynamic random access memory (DynamicRandomAccessMemory, DRAM), silicon through hole (ThroughSiliconVia, TSV), etc.Have in deep trench manufacturing process and remove silicon nitride (Si
3n
4) step.
In deep groove device manufacture process, silicon nitride can be formed at the extra-regional described silicon chip surface of described deep trench, or described silicon nitride is formed on the surface of the extra-regional described silicon chip surface of described deep trench and described deep trench.The described silicon nitride removed, in existing deep groove device manufacture process, the minimizing technology of silicon nitride is, directly the described silicon chip being formed with described silicon nitride is immersed in phosphoric acid groove, under the catalytic action of phosphoric acid, described silicon nitride is also removed by the water (H2O) in described phosphoric acid groove and described silicon nitride reaction, and the reaction time is generally 65 minutes.After the described silicon nitride of removal, also need again cleaning way (quickdumprinse, QDR) to be arranged soon to silicon chip employing and with deionized water, silicon chip is cleaned, finally again that described silicon chip is dry.
But device cell (Cell) region on silicon chip and scribe line (ScriberLine) region silicon nitride residue can be there is in existing method.As illustrated in fig. 1 and 2, scanning electron microscopy (ScanningElectronMicroscopy, SEM) figure and defect (defect) distribution map that existing method removes silicon chip after silicon nitride is respectively.Can find out, existing method can not remove completely silicon chip surface silicon nitride, have the residual of silicon nitride, finally can form a lot of defect.Adopt light microscope (OpticalMicroscopy, OM) to observe and can see the residual of silicon nitride too.
In existing deep groove device manufacture process silicon nitride minimizing technology in, after silicon chip is immersed in phosphoric acid groove, because the liquid in phosphoric acid groove and phosphoric acid have toughness, the bubble bottom deep trench can be made to be discharged completely, cause in course of reaction, bubble is easy to the reaction disturbing silicon nitride and water, thus silicon nitride cannot be removed completely within the time limited, and causes and forms silicon nitride residue problem.
Summary of the invention
Technical problem to be solved by this invention is to provide the minimizing technology of silicon nitride in a kind of deep groove device manufacture process, can remove the silicon nitride in deep groove device manufacture process completely, solve silicon nitride residue problem, thus can improve product yield.
For solving the problems of the technologies described above, the invention provides the minimizing technology of silicon nitride in a kind of deep groove device manufacture process, silicon chip is formed the deep trench of deep groove device, silicon nitride is formed at the extra-regional described silicon chip surface of described deep trench, or described silicon nitride is formed on the surface of the extra-regional described silicon chip surface of described deep trench and described deep trench; Following steps are adopted to remove described silicon nitride:
Step one, employing overflow cleaning (OverFlow, OF) mode, carry out preliminary treatment with deionized water to the described silicon chip being formed with described silicon nitride, the bubble in described deep trench is got rid of by described deionized water completely.
After step 2, preliminary treatment, be immersed in phosphoric acid groove by described silicon chip and carry out etching processing, under the catalytic action of phosphoric acid, described silicon nitride is also removed by the water in described phosphoric acid groove and described silicon nitride reaction completely.
Further improvement is, the pretreated time described in step one is greater than 200 seconds.
Further improvement is, the degree of depth of described deep trench is greater than 1 micron, and better being chosen as is greater than 10 microns.
The inventive method is by before being immersed in phosphoric acid groove by silicon chip, increase a pretreated step, bubble bottom the deep trench being formed at deep groove device can all be got rid of by the deionized water in pre-treatment step, thus bubble can be avoided in follow-up etching processing to disturb the reaction of silicon nitride and water, finally can remove the silicon nitride in deep groove device manufacture process completely, solve silicon nitride residue problem, thus can product yield be improved.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1 is that after existing method removes silicon nitride, the SEM of silicon chip schemes;
Fig. 2 is the defect map of silicon chip after existing method removal silicon nitride;
Fig. 3 is the flow chart of embodiment of the present invention method;
Fig. 4 is that after embodiment of the present invention method removes silicon nitride, the SEM of silicon chip schemes;
Fig. 5 is the defect map of silicon chip after embodiment of the present invention method removal silicon nitride.
Embodiment
As shown in Figure 3, be the flow chart of embodiment of the present invention method; Silicon chip is formed deep groove device as super-junction device, the degree of depth is about the deep trench of 35 microns, silicon nitride is formed at the extra-regional described silicon chip surface of described deep trench, under particular case, silicon nitride also can be formed in described deep trench, and in the embodiment of the present invention, silicon nitride is only formed at the extra-regional described silicon chip surface of described deep trench; In embodiment of the present invention deep groove device manufacture process, the minimizing technology of silicon nitride adopts following steps to remove described silicon nitride:
Step one, employing OF mode, carry out preliminary treatment with deionized water to the described silicon chip being formed with described silicon nitride, the described pretreated time is 650 seconds, and the bubble in described deep trench is got rid of by described deionized water completely.
After step 2, preliminary treatment, be immersed in phosphoric acid groove by described silicon chip and carry out etching processing, the time of etching processing is 65 minutes, and under the catalytic action of phosphoric acid, described silicon nitride is also removed by the water in described phosphoric acid groove and described silicon nitride reaction completely.
Adopt hot deionized water to clear soon to silicon chip more afterwards and wash (HotDIQuickDumpRinse, HQDR) mode deionized water cleans silicon chip, scavenging period is 650 seconds, finally again (FinalRinse is finally cleaned successively to described silicon chip, FR) technique and rotation dry (SpinDryer, SD), the process time of FR technique and SD technique is all 300 seconds.
Bubble bottom the deep trench being formed at deep groove device can all be got rid of by the deionized water in the pre-treatment step of embodiment of the present invention method, thus bubble can be avoided in follow-up etching processing to disturb the reaction of silicon nitride and water, finally can remove the silicon nitride in deep groove device manufacture process completely, solve silicon nitride residue problem, thus can product yield be improved.As shown in Fig. 4 to 5, after being respectively embodiment of the present invention method removal silicon nitride, the SEM of silicon chip schemes and defect map.Can find out, embodiment of the present invention method can remove the silicon nitride with deep trench in super junction completely, eliminates the residual of silicon nitride, finally can form less defect, substantially increase the yield of product.
Above by specific embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (3)
1. the minimizing technology of silicon nitride in deep groove device manufacture process, silicon chip is formed the deep trench of deep groove device, and the degree of depth of described deep trench is greater than 1 micron; Silicon nitride is formed at the extra-regional described silicon chip surface of described deep trench, or described silicon nitride is formed on the surface of the extra-regional described silicon chip surface of described deep trench and described deep trench; It is characterized in that, adopt following steps to remove described silicon nitride:
Step one, employing overflow cleaning way, carry out preliminary treatment with deionized water to the described silicon chip being formed with described silicon nitride, the bubble in described deep trench is got rid of by described deionized water completely;
After step 2, preliminary treatment, be immersed in phosphoric acid groove by described silicon chip and carry out etching processing, under the catalytic action of phosphoric acid, described silicon nitride is also removed by the water in described phosphoric acid groove and described silicon nitride reaction completely.
2. the minimizing technology of silicon nitride in deep groove device manufacture process as claimed in claim 1, is characterized in that: the pretreated time described in step one is greater than 200 seconds.
3. the minimizing technology of silicon nitride in deep groove device manufacture process as claimed in claim 1, is characterized in that: the degree of depth of described deep trench is greater than 10 microns.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465273A (en) * | 2007-12-18 | 2009-06-24 | 中芯国际集成电路制造(上海)有限公司 | Wet-type etching method for reducing wafer surface blemish and device thereof |
| CN102110590A (en) * | 2010-06-26 | 2011-06-29 | 天水天光半导体有限责任公司 | Method for using deionized water as wetting agent in oxide corrosion of semiconductor device |
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| DE10143283C1 (en) * | 2001-09-04 | 2002-12-12 | Infineon Technologies Ag | Production of a trench capacitor comprises a preparing a substrate having a surface in which a trench is formed and having an upper region, a lower region and a side wall |
| CN1278394C (en) * | 2003-05-12 | 2006-10-04 | 旺宏电子股份有限公司 | Equipment and method for etching silicon nitride thin film |
| CN102085518A (en) * | 2009-12-03 | 2011-06-08 | 无锡华润上华半导体有限公司 | Method for cleaning wafer and method for removing silicon nitride layer and silicon oxynitride layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101465273A (en) * | 2007-12-18 | 2009-06-24 | 中芯国际集成电路制造(上海)有限公司 | Wet-type etching method for reducing wafer surface blemish and device thereof |
| CN102110590A (en) * | 2010-06-26 | 2011-06-29 | 天水天光半导体有限责任公司 | Method for using deionized water as wetting agent in oxide corrosion of semiconductor device |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140115 |
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Effective date of registration: 20140115 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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