WO2008145231A3 - Method for treating silicon wafers, corresponding treatment liquid and thus treated silicon wafer - Google Patents

Method for treating silicon wafers, corresponding treatment liquid and thus treated silicon wafer Download PDF

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Publication number
WO2008145231A3
WO2008145231A3 PCT/EP2008/003113 EP2008003113W WO2008145231A3 WO 2008145231 A3 WO2008145231 A3 WO 2008145231A3 EP 2008003113 W EP2008003113 W EP 2008003113W WO 2008145231 A3 WO2008145231 A3 WO 2008145231A3
Authority
WO
WIPO (PCT)
Prior art keywords
treatment liquid
corresponding treatment
silicon wafers
hydroxy
treating
Prior art date
Application number
PCT/EP2008/003113
Other languages
German (de)
French (fr)
Other versions
WO2008145231A2 (en
Inventor
Holger Froehlich
Original Assignee
Schmid Gmbh & Co Geb
Holger Froehlich
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Gmbh & Co Geb, Holger Froehlich filed Critical Schmid Gmbh & Co Geb
Publication of WO2008145231A2 publication Critical patent/WO2008145231A2/en
Publication of WO2008145231A3 publication Critical patent/WO2008145231A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

In order to improve a treatment process of silicon wafers (17) for producing solar cells, in particular to accelerate and to increase the density of the pyramid structure, an additive is added to the alkaline treatment liquid, as well as at least one water-soluble hydroxy compound from the group comprising hydroxycarbonyles, hydroxy aromates, alicyclic hydroxy compounds, aliphatic polyhydroxy compounds and aliphatic-aromatic hydroxy compounds, preferably sorbitol. The proportion of the additive can only be a few percent.
PCT/EP2008/003113 2007-05-25 2008-04-18 Method for treating silicon wafers, corresponding treatment liquid and thus treated silicon wafer WO2008145231A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007026081A DE102007026081A1 (en) 2007-05-25 2007-05-25 Process for treating silicon wafers, treatment liquid and silicon wafers
DE102007026081.6 2007-05-25

Publications (2)

Publication Number Publication Date
WO2008145231A2 WO2008145231A2 (en) 2008-12-04
WO2008145231A3 true WO2008145231A3 (en) 2009-04-02

Family

ID=39874935

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/003113 WO2008145231A2 (en) 2007-05-25 2008-04-18 Method for treating silicon wafers, corresponding treatment liquid and thus treated silicon wafer

Country Status (3)

Country Link
DE (1) DE102007026081A1 (en)
TW (1) TW200913045A (en)
WO (1) WO2008145231A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008022282A1 (en) 2008-04-24 2009-10-29 Gebr. Schmid Gmbh & Co. Device and method for treating silicon wafers or flat objects
DE102009012827A1 (en) 2009-03-03 2010-10-07 Gebr. Schmid Gmbh & Co. Process for texturing silicon wafers for solar cells and treatment liquid therefor
DE102009028762A1 (en) * 2009-08-20 2011-03-03 Rena Gmbh Process for etching silicon surfaces
CN101635322B (en) * 2009-08-26 2011-01-05 北京中联科伟达技术股份有限公司 Method and device for chain velvet making of multi-crystalline solar cell
DE102009060931A1 (en) * 2009-12-23 2011-06-30 Gebr. Schmid GmbH & Co., 72250 Method and apparatus for treating silicon substrates
DE102011000861A1 (en) * 2011-02-22 2012-08-23 Rena Gmbh Method for treating an object, in particular a solar cell substrate, and device for carrying out the method
DE102011084346A1 (en) 2011-10-12 2013-04-18 Schott Solar Ag Process for treating silicon wafers, treatment liquid and silicon wafers
DE102012107537A1 (en) * 2012-08-16 2014-05-22 Hanwha Q Cells Gmbh Method for surface treating monocrystalline semiconductor wafer for manufacture of solar cells in inline plant, involves performing P-N junction process by wafer, and subjecting back surface of wafer to wet-chemical etching process
CN102916075A (en) * 2012-09-27 2013-02-06 奥特斯维能源（太仓）有限公司 Method for stabilizing wool-making depth
CN103811583A (en) * 2012-11-12 2014-05-21 北京北方微电子基地设备工艺研究中心有限责任公司 Silicon wafer texture method and silicon wafer texture device
DE102014119090B4 (en) 2014-12-18 2022-12-01 Hanwha Q Cells Gmbh In-line wet bench apparatus and method for wet chemical processing of semiconductor wafers
DE102016105866B3 (en) * 2016-03-31 2017-07-06 Technische Universität Bergakademie Freiberg Silicon wafer, method for patterning a silicon wafer and solar cell

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
EP0944114A2 (en) * 1998-03-18 1999-09-22 SIEMENS SOLAR GmbH Process for the wet etching of a pyramidal texture on silicium surfaces
JP2002057139A (en) * 2000-08-09 2002-02-22 Sanyo Electric Co Ltd Method of manufacturing substrate with irregularities and method of manufacturing surfactant for forming irregular structure and photovoltaic device
JP2005019605A (en) * 2003-06-25 2005-01-20 Naoetsu Electronics Co Ltd Etchant for texture formation
WO2006046601A1 (en) * 2004-10-28 2006-05-04 Mimasu Semiconductor Industry Co., Ltd. Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
CN1983644A (en) * 2005-12-13 2007-06-20 上海太阳能科技有限公司 Production of monocrystalline silicon solar battery suede
EP1826829A2 (en) * 2006-02-23 2007-08-29 Sanyo Electric Co., Ltd. Method for making irregularly surfaced substrate and method for fabricating photovoltaic device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
EP0944114A2 (en) * 1998-03-18 1999-09-22 SIEMENS SOLAR GmbH Process for the wet etching of a pyramidal texture on silicium surfaces
US20020079290A1 (en) * 1998-03-18 2002-06-27 Konstantin Holdermann Etching solution for wet chemical pyramidal texture etching of silicon surfaces
JP2002057139A (en) * 2000-08-09 2002-02-22 Sanyo Electric Co Ltd Method of manufacturing substrate with irregularities and method of manufacturing surfactant for forming irregular structure and photovoltaic device
JP2005019605A (en) * 2003-06-25 2005-01-20 Naoetsu Electronics Co Ltd Etchant for texture formation
WO2006046601A1 (en) * 2004-10-28 2006-05-04 Mimasu Semiconductor Industry Co., Ltd. Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
EP1806775A1 (en) * 2004-10-28 2007-07-11 Mimasu Semiconductor Industry Co., Ltd. Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
CN1983644A (en) * 2005-12-13 2007-06-20 上海太阳能科技有限公司 Production of monocrystalline silicon solar battery suede
EP1826829A2 (en) * 2006-02-23 2007-08-29 Sanyo Electric Co., Ltd. Method for making irregularly surfaced substrate and method for fabricating photovoltaic device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DIVAN R ET AL: "Roughning and smoothing dynamics during KOH silicon etching", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 74, no. 1-3, 20 April 1999 (1999-04-20), pages 18 - 23, XP004188049, ISSN: 0924-4247 *
MOLDOVAN C ET AL: "Anisotropic etching of silicon in a complexant redox alkaline system", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 58, no. 1-3, 21 September 1999 (1999-09-21), pages 438 - 449, XP004253045, ISSN: 0925-4005 *

Also Published As

Publication number Publication date
DE102007026081A1 (en) 2008-11-27
TW200913045A (en) 2009-03-16
WO2008145231A2 (en) 2008-12-04

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