WO2008145231A3 - Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium - Google Patents
Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium Download PDFInfo
- Publication number
- WO2008145231A3 WO2008145231A3 PCT/EP2008/003113 EP2008003113W WO2008145231A3 WO 2008145231 A3 WO2008145231 A3 WO 2008145231A3 EP 2008003113 W EP2008003113 W EP 2008003113W WO 2008145231 A3 WO2008145231 A3 WO 2008145231A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- treatment liquid
- corresponding treatment
- silicon wafers
- hydroxy
- treating
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 235000012431 wafers Nutrition 0.000 title abstract 3
- 239000007788 liquid Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000654 additive Substances 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 abstract 1
- -1 alicyclic hydroxy compounds Chemical class 0.000 abstract 1
- 125000001931 aliphatic group Chemical group 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 150000002440 hydroxy compounds Chemical class 0.000 abstract 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
- 239000000600 sorbitol Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
L'invention vise à perfectionner un processus de texturation de tranches de silicium (17) pour produire des piles solaires, et notamment à accélérer et à augmenter la densité de la structure pyramidale. A cet effet, il est prévu d'ajouter comme additif à un liquide de traitement alcalin, au moins un composé hydroxy soluble dans l'eau, issu du groupe comprenant les hydroxycarbonyles, les hydroxyaromates, les composés hydroxy alicycliques, les composés polyhydroxy aliphatiques, ainsi que les composés hydroxy aliphatiques-aromatiques, de préférence du sorbitol. La proportion d'additif peut ne s'élever qu'à quelques pour cent.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007026081A DE102007026081A1 (de) | 2007-05-25 | 2007-05-25 | Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer |
DE102007026081.6 | 2007-05-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008145231A2 WO2008145231A2 (fr) | 2008-12-04 |
WO2008145231A3 true WO2008145231A3 (fr) | 2009-04-02 |
Family
ID=39874935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2008/003113 WO2008145231A2 (fr) | 2007-05-25 | 2008-04-18 | Procédé de traitement de tranches de silicium, liquide de traitement approprié et tranche de silicium |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102007026081A1 (fr) |
TW (1) | TW200913045A (fr) |
WO (1) | WO2008145231A2 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008022282A1 (de) | 2008-04-24 | 2009-10-29 | Gebr. Schmid Gmbh & Co. | Einrichtung und Verfahren zur Behandlung von Silizium-Wafern oder flachen Gegenständen |
DE102009012827A1 (de) | 2009-03-03 | 2010-10-07 | Gebr. Schmid Gmbh & Co. | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
DE102009028762A1 (de) * | 2009-08-20 | 2011-03-03 | Rena Gmbh | Verfahren zum Ätzen von Siliziumoberflächen |
CN101635322B (zh) * | 2009-08-26 | 2011-01-05 | 北京中联科伟达技术股份有限公司 | 一种多晶太阳能电池片的链式制绒的方法及装置 |
DE102009060931A1 (de) * | 2009-12-23 | 2011-06-30 | Gebr. Schmid GmbH & Co., 72250 | Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten |
DE102011000861A1 (de) * | 2011-02-22 | 2012-08-23 | Rena Gmbh | Verfahren zum Behandeln eines Objekts, insbesondere eines Solarzellensubstrats, und Vorrichtung zur Durchführung des Verfahrens |
DE102011084346A1 (de) | 2011-10-12 | 2013-04-18 | Schott Solar Ag | Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer |
DE102012107537A1 (de) * | 2012-08-16 | 2014-05-22 | Hanwha Q Cells Gmbh | Verfahren zur Oberflächenbehandlung eines monokristallinen Halbleiterwafers und Verfahren zur Herstellung einer monokristallinen Halbleiterwafer-Solarzelle |
CN102916075A (zh) * | 2012-09-27 | 2013-02-06 | 奥特斯维能源(太仓)有限公司 | 一种制绒深度稳定的方法 |
CN103811583A (zh) * | 2012-11-12 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种硅片制绒方法及硅片制绒装置 |
DE102014119090B4 (de) | 2014-12-18 | 2022-12-01 | Hanwha Q Cells Gmbh | In-line-Nassbankvorrichtung und Verfahren für die nasschemische Bearbeitung von Halbleiterwafern |
DE102016105866B3 (de) * | 2016-03-31 | 2017-07-06 | Technische Universität Bergakademie Freiberg | Siliziumwafer, Verfahren zum Strukturieren eines Siliziumwafers und Solarzelle |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4941941A (en) * | 1989-10-03 | 1990-07-17 | International Business Machines Corporation | Method of anisotropically etching silicon wafers and wafer etching solution |
EP0944114A2 (fr) * | 1998-03-18 | 1999-09-22 | SIEMENS SOLAR GmbH | Procedé pour l'attaque par voie humide de structures pyramidales sur la surface de silicium |
JP2002057139A (ja) * | 2000-08-09 | 2002-02-22 | Sanyo Electric Co Ltd | 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法 |
JP2005019605A (ja) * | 2003-06-25 | 2005-01-20 | Naoetsu Electronics Co Ltd | テクスチャー形成用エッチング液 |
WO2006046601A1 (fr) * | 2004-10-28 | 2006-05-04 | Mimasu Semiconductor Industry Co., Ltd. | Procédé de fabrication de substrat semi-conducteur, substrat semi-conducteur pour application solaire et solution d’attaque chimique |
CN1983644A (zh) * | 2005-12-13 | 2007-06-20 | 上海太阳能科技有限公司 | 制作单晶硅太阳电池绒面的方法 |
EP1826829A2 (fr) * | 2006-02-23 | 2007-08-29 | Sanyo Electric Co., Ltd. | Procédé pour fabriquer un substrat à surface irrégulière et procédé pour fabriquer un dispositif photovoltaïque |
-
2007
- 2007-05-25 DE DE102007026081A patent/DE102007026081A1/de not_active Withdrawn
-
2008
- 2008-04-18 WO PCT/EP2008/003113 patent/WO2008145231A2/fr active Application Filing
- 2008-05-07 TW TW097116867A patent/TW200913045A/zh unknown
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4941941A (en) * | 1989-10-03 | 1990-07-17 | International Business Machines Corporation | Method of anisotropically etching silicon wafers and wafer etching solution |
EP0944114A2 (fr) * | 1998-03-18 | 1999-09-22 | SIEMENS SOLAR GmbH | Procedé pour l'attaque par voie humide de structures pyramidales sur la surface de silicium |
US20020079290A1 (en) * | 1998-03-18 | 2002-06-27 | Konstantin Holdermann | Etching solution for wet chemical pyramidal texture etching of silicon surfaces |
JP2002057139A (ja) * | 2000-08-09 | 2002-02-22 | Sanyo Electric Co Ltd | 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法 |
JP2005019605A (ja) * | 2003-06-25 | 2005-01-20 | Naoetsu Electronics Co Ltd | テクスチャー形成用エッチング液 |
WO2006046601A1 (fr) * | 2004-10-28 | 2006-05-04 | Mimasu Semiconductor Industry Co., Ltd. | Procédé de fabrication de substrat semi-conducteur, substrat semi-conducteur pour application solaire et solution d’attaque chimique |
EP1806775A1 (fr) * | 2004-10-28 | 2007-07-11 | Mimasu Semiconductor Industry Co., Ltd. | Procédé de fabrication de substrat semi-conducteur, substrat semi-conducteur pour application solaire et solution d attaque chimique |
CN1983644A (zh) * | 2005-12-13 | 2007-06-20 | 上海太阳能科技有限公司 | 制作单晶硅太阳电池绒面的方法 |
EP1826829A2 (fr) * | 2006-02-23 | 2007-08-29 | Sanyo Electric Co., Ltd. | Procédé pour fabriquer un substrat à surface irrégulière et procédé pour fabriquer un dispositif photovoltaïque |
Non-Patent Citations (2)
Title |
---|
DIVAN R ET AL: "Roughning and smoothing dynamics during KOH silicon etching", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 74, no. 1-3, 20 April 1999 (1999-04-20), pages 18 - 23, XP004188049, ISSN: 0924-4247 * |
MOLDOVAN C ET AL: "Anisotropic etching of silicon in a complexant redox alkaline system", SENSORS AND ACTUATORS B, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 58, no. 1-3, 21 September 1999 (1999-09-21), pages 438 - 449, XP004253045, ISSN: 0925-4005 * |
Also Published As
Publication number | Publication date |
---|---|
DE102007026081A1 (de) | 2008-11-27 |
TW200913045A (en) | 2009-03-16 |
WO2008145231A2 (fr) | 2008-12-04 |
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