CN110311038A - A method of increasing perovskite solar battery perovskite film layer crystal particle size - Google Patents

A method of increasing perovskite solar battery perovskite film layer crystal particle size Download PDF

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Publication number
CN110311038A
CN110311038A CN201910546464.5A CN201910546464A CN110311038A CN 110311038 A CN110311038 A CN 110311038A CN 201910546464 A CN201910546464 A CN 201910546464A CN 110311038 A CN110311038 A CN 110311038A
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perovskite
film layer
solar battery
particle size
crystal particle
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CN110311038B (en
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陈淑芬
孙煜
钱洁
黄维
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Nanjing Post and Telecommunication University
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Nanjing Post and Telecommunication University
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a kind of methods for increasing perovskite solar battery perovskite film layer crystal particle size, and the perovskite precursor solution containing amino acid material is used a step spin-coating method spin coating on a glass substrate under an inert atmosphere, and anti-solvent after annealing is added dropwise.The crystallite dimension of the perovskite film layer of the method for the present invention reaches 910nm, to achieving the effect that reduce boundary defect, improving carrier transport performance and then promoting perovskite film layer photoelectric properties, photoluminescence spectra intensity reaches 1500, transient lifetime reaches 171.57ns, with good photoelectric property, the long-life can prepare efficient perovskite solar battery, incident photon-to-electron conversion efficiency is improved, can be applied to the fields such as efficient perovskite solar battery.

Description

A method of increasing perovskite solar battery perovskite film layer crystal particle size
Technical field
The present invention relates to the preparation method of perovskite solar battery perovskite film layer, in particular to a kind of increase perovskite The method of solar battery perovskite film layer crystal particle size.
Background technique
Perovskite solar battery is grown up on the basis of dye-sensitized solar cells, and numerous new Show one's talent in type solar battery, solar conversion efficiency from 3.8% in 2009, till now 24.2%. Perovskite solar battery has the advantage that carrier mobility is high, photo absorption performance is good, structure is simple, at low cost and preparation Mild condition etc..In addition, crystallinity is good, the perovskite thin film of high quality can generate more photo-generated carriers, and it is smooth Smooth imperforate perovskite thin film can be contacted preferably with transport layer, photohole/electronics can be efficiently transmitted to hole/ Electron transfer layer guarantees that enough carriers can be collected by electrode to reduce Carrier recombination.Therefore, perovskite film is controlled Nucleation, growth rate in layer crystallization process, can be with the size of Effective Regulation perovskite crystal, prepared high quality Perovskite extinction film interface defect is reduced, and the performance that transports of carrier is further improved, and may finally promote perovskite The incident photon-to-electron conversion efficiency of solar battery.
Summary of the invention
Goal of the invention: it is an object of the present invention to provide a kind of increase perovskite solar battery perovskite film layer crystal particle sizes Method, this method adulterate a small amount of amino acid material in the precursor solution of perovskite solar battery, control perovskite film Nucleation, growth rate in layer crystallization process.
Technical solution: the present invention provides a kind of method for increasing perovskite solar battery perovskite film layer crystal particle size, On a glass substrate using a step spin-coating method spin coating by the perovskite precursor solution containing amino acid material, after anti-solvent is added dropwise Annealing.
Further, the amino acid material is D-2 aminoadipic acid.
Further, the preparation method of the perovskite precursor solution containing amino acid material, includes the following steps:
(1) by PbI2It is dissolved in the mixed solution of DMF and DMSO;
(2) it is put into shaker, oscillation keeps solution uniform;
(3) methylamine iodine, first ammonia chlorine and amino acid material (passivating material) is added into solution again, is put into shaker, shakes Swing 18-20min.
Further, it needs to be filtered before the perovskite precursor solution spin coating containing amino acid material, purpose It is undissolved particle in removal solution.
Further, the anti-solvent time for adding need to be maintained within 6s, it is therefore an objective to ensure that perovskite film layer is quickly tied It is brilliant.
Further, the glass substrate is handled before spin coating using UV, it is therefore an objective to ensure spin coating solution preferably in base On piece drawout.
Further, clean substrate of glass using acetone and ethyl alcohol cotton balls before glass substrate UV processing, then with acetone, After ethyl alcohol and each ultrasound of deionized water, drying, the purpose of above-mentioned treatment process is to ensure that substrate is clean.
The principle of the invention is when amino acid material ligand plays booster action, with the perovskite skeleton in precursor solution On metal ion interact and form interphase, the crystalline rate of perovskite has been slowed down with this and then has made its homogeneous nucleation. Ligand is discharged by post-processing step, finally obtains the perovskite crystal film of smooth densification.By to perovskite solar-electricity The amino acid material (D-2 aminoadipic acid) of the precursor solution doping in pond increases calcium titanium to be modified precursor solution to reach The purpose of mine film layer crystallite dimension, so that calcium titanium ore bed be made preferably to contact with transport layer, photohole/electronics can be passed effectively Hole/electron transfer layer is transported to, Carrier recombination is reduced, guarantees that enough carriers can be collected by electrode, it is final to improve electricity The photoelectric conversion performance in pond.
The utility model has the advantages that the crystallite dimension of perovskite film layer of the invention reaches 910nm, photoluminescence spectra intensity reaches 1500, transient lifetime reaches 171.57ns, has good photoelectric property, and the long-life can prepare the efficient perovskite sun Energy battery, improves incident photon-to-electron conversion efficiency.
Detailed description of the invention
Fig. 1 is that the scanning electron for the film (standard sample) that the perovskite precursor solution spin coating undoped with amino acid obtains is aobvious Micro mirror image;
Fig. 2 is the film (passivation adulterating the perovskite precursor solution spin coating of D-2 aminoadipic acid (1mmol/L) and obtaining Sample) scanning electron microscope image;
Fig. 3 is the luminescence generated by light spectrogram of the sample after standard sample and the passivation of D-2 aminoadipic acid;
Fig. 4 is the transient state fluorescence lifetime figure of the sample after standard sample and the passivation of D-2 aminoadipic acid.
Specific embodiment
(1) cleaning of glass substrate: cleaning glass substrate using acetone and ethyl alcohol cotton balls, then with acetone, ethyl alcohol and go from Sub- water is after each ultrasonic 15 minutes, 100 DEG C of drying;
(2) 15min the processing of glass substrate: is handled to glass substrate UV;
(3) preparation of perovskite film layer: with and without doping amino acid material (passivating material) D-2 aminoadipic acid System compares, specific as follows:
The preparation of perovskite film layer is not passivated and (do not adulterated amino acid material): substrate being moved into glove box, in nitrogen atmosphere Under enclosing, using a step spin-coating method, by precursor solution (1mol PbI2It is dissolved in the in the mixed solvent of 1mL DMF and DMSO, wherein DMF and DMSO volume ratio is 6.28: 1) drop is in substrate, with the spin coating at once of the revolving speed of 5000rpm, spin-coating time 35s, Anti-solvent is added dropwise in 6.5s, is placed in 70 DEG C of thermal station and anneals 30 minutes;
The preparation of the perovskite film layer of D-2 aminoadipic acid passivation (doping amino acid material): moving into glove box for substrate, Under nitrogen atmosphere, using a step spin-coating method, by precursor solution (1mol PbI2It is dissolved in the mixed solvent of 1mL DMF and DMSO In, wherein DMF and DMSO volume ratio is 6.28: 1, then 600mg methylamine iodine, 8.7mg first ammonia chlorine and 1mmol/L are added into solution D-2 aminoadipic acid, be put into shaker, vibrate 18-20min) drop in substrate, at once with the revolving speed of 5000rpm Spin coating, spin-coating time 35s, is added dropwise anti-solvent in 6s, is placed in 70 DEG C of thermal station and anneals 30 minutes.
Fig. 1 is the scanning electron microscope image of standard specimen, deposits the smooth densification of film on a glass substrate, and part calcium Titanium ore crystallite dimension is 736nm;
Fig. 2 is the scanning electron microscope image for adulterating D-2 aminoadipic acid, and the film deposited on a glass substrate is smooth Densification, and part perovskite crystallite dimension is 910nm;
Fig. 3 is the luminescence generated by light spectrogram of the sample after standard specimen and the passivation of D-2 aminoadipic acid;
Fig. 4 is the transient state fluorescence lifetime figure of the sample after standard specimen and the passivation of D-2 aminoadipic acid, the transient lifetime after passivation Reach 140ns.
Average attenuation time (τ in the present embodiment transient state fluorescence spectrumavr) calculation method such as formula 1.1:
τavr=A1τ1+A2τ2+A3τ3 1.1
Wherein A1、A2And A3Indicate decay amplitude, τ1, τ2And τ3Indicate die-away time.
The result obtained by instrument the Fitting Calculation is as shown in the table.

Claims (7)

1. a kind of method for increasing perovskite solar battery perovskite film layer crystal particle size, it is characterised in that: amino will be contained The perovskite precursor solution of sour material uses a step spin-coating method spin coating on a glass substrate under an inert atmosphere, and anti-solvent is added dropwise After annealing.
2. the method according to claim 1 for increasing perovskite solar battery perovskite film layer crystal particle size, feature Be: the amino acid material is D-2 aminoadipic acid.
3. the method according to claim 1 for increasing perovskite solar battery perovskite film layer crystal particle size, feature Be: the preparation method of the perovskite precursor solution containing amino acid material includes the following steps:
(1) by PbI2It is dissolved in the mixed solution of DMF and DMSO;
(2) it is put into shaker, oscillation keeps solution uniform;
(3) methylamine iodine, first ammonia chlorine and amino acid material is added into solution again, is put into shaker, vibrates 18-20min, i.e., It can.
4. the method according to claim 1 for increasing perovskite solar battery perovskite film layer crystal particle size, feature It is: needs to be filtered before the perovskite precursor solution spin coating containing amino acid material.
5. the method according to claim 1 for increasing perovskite solar battery perovskite film layer crystal particle size, feature Be: the anti-solvent time for adding need to be maintained within 6s.
6. the method according to claim 1 for increasing perovskite solar battery perovskite film layer crystal particle size, feature Be: the glass substrate is handled before spin coating using UV.
7. the method according to claim 6 for increasing perovskite solar battery perovskite film layer crystal particle size, feature It is: cleans substrate of glass using acetone and ethyl alcohol cotton balls before glass substrate UV processing, then with acetone, ethyl alcohol and deionization After each ultrasound of water, drying.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113061992A (en) * 2021-04-15 2021-07-02 海南大学 Preparation device, preparation method and application of perovskite micro-nano crystal grains
CN113943972A (en) * 2021-09-28 2022-01-18 宁波博旭光电科技有限公司 Method for improving growth quality of tin-based perovskite crystal and solar cell device
CN114709335A (en) * 2022-03-30 2022-07-05 暨南大学 Application of organic fluoride and iodide thereof as solar cell interface modification material and solar cell based on material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106128954A (en) * 2016-07-21 2016-11-16 电子科技大学 A kind of method promoting perovskite crystalline
WO2017011239A1 (en) * 2015-07-10 2017-01-19 Hunt Energy Enterprises, L.L.C. Perovskite material layer processing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017011239A1 (en) * 2015-07-10 2017-01-19 Hunt Energy Enterprises, L.L.C. Perovskite material layer processing
CN106128954A (en) * 2016-07-21 2016-11-16 电子科技大学 A kind of method promoting perovskite crystalline

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113061992A (en) * 2021-04-15 2021-07-02 海南大学 Preparation device, preparation method and application of perovskite micro-nano crystal grains
CN113061992B (en) * 2021-04-15 2023-07-04 海南大学 Perovskite micro-nano grain preparation device, preparation method and application thereof
CN113943972A (en) * 2021-09-28 2022-01-18 宁波博旭光电科技有限公司 Method for improving growth quality of tin-based perovskite crystal and solar cell device
CN114709335A (en) * 2022-03-30 2022-07-05 暨南大学 Application of organic fluoride and iodide thereof as solar cell interface modification material and solar cell based on material

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