CN106128954A - A kind of method promoting perovskite crystalline - Google Patents
A kind of method promoting perovskite crystalline Download PDFInfo
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- CN106128954A CN106128954A CN201610575139.8A CN201610575139A CN106128954A CN 106128954 A CN106128954 A CN 106128954A CN 201610575139 A CN201610575139 A CN 201610575139A CN 106128954 A CN106128954 A CN 106128954A
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 230000001737 promoting effect Effects 0.000 title claims abstract description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 238000000137 annealing Methods 0.000 claims abstract description 31
- 239000012298 atmosphere Substances 0.000 claims abstract description 21
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 abstract description 23
- 239000002904 solvent Substances 0.000 abstract description 18
- 239000013078 crystal Substances 0.000 abstract description 14
- 230000007547 defect Effects 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000009835 boiling Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 238000005728 strengthening Methods 0.000 abstract 1
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- AJRXEXGVDMEBCT-UHFFFAOYSA-M [NH4+].[I-].C[N+]1=CC=CC=C1.[I-] Chemical compound [NH4+].[I-].C[N+]1=CC=CC=C1.[I-] AJRXEXGVDMEBCT-UHFFFAOYSA-M 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229960002796 polystyrene sulfonate Drugs 0.000 description 2
- 239000011970 polystyrene sulfonate Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 1
- SXMUSCUQMMSSKP-UHFFFAOYSA-N [O].C=1C=CSC=1 Chemical compound [O].C=1C=CSC=1 SXMUSCUQMMSSKP-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- -1 gamma-hydroxybutyric acid Ester Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of method promoting perovskite thin film crystal property, it is in perovskite preparation process, anneals under dimethyl sulfoxide solvent atmosphere, improves a kind of method of perovskite crystalline.During annealing, perovskite sample is placed under dimethyl sulfoxide atmosphere and can promote grain growth, generate crystalline property excellence, the perovskite thin film of defect concentration reduction.This thin film can reduce the Carrier recombination of perovskite solaode and promote the performance of perovskite solaode.Annealing relative to conventional steam and dimethylformamide equal solvent, dimethyl sulfoxide has lower vapour pressure and higher boiling point, has bigger advantage in terms of strengthening perovskite crystalline.
Description
Technical field
The present invention relates to the solaode based on hybrid inorganic-organic perovskite material, be specifically related to one and carry
Rise the method for annealing of perovskite crystalline.
Background technology
Solar-photovoltaic technology is the important component part of green energy resource, in the solaode of current various species,
Ca-Ti ore type solaode, with excellent characteristics such as its high absorbance, high carrier mobility, with low cost, technique are simple, is subject to
To the concern of numerous scientific research personnel, and it it is considered as the Novel photovoltaic battery of great development prospect.Ca-Ti ore type photovoltaic electric at present
The conversion efficiency in pond has reached more than 20%, has reached business silion cell peer-level.
Perovskite-type material mainly uses a step spin-coating method, two-step method, altogether steaming method to be prepared at present.But these systems
Preparation Method is all difficult to prepare the perovskite thin film of high crystalline.For prepared high efficiency perovskite solar cell device, perovskite
Light absorbing zone should have good spreadability, excellent flatness and sufficiently crystallinity.The crystallinity of perovskite thin film
Well contribute to reducing its defect state density, reducing the compound of carrier.Through obtaining preferably crystallization frequently with annealing
Property.
Perovskite conventional annealing methods is in a nitrogen atmosphere (thermal annealing), uses 100 degree celsius temperature heating crystalline.This
In individual crystallization process, methylpyridinium iodide ammonium (MAI) can be with lead iodide (PbI2) react to each other, generate perovskite crystal.Nitrogen is at this
In play the effect of protective gas, prevent perovskite from meeting water, oxygen decomposes.Solvent anneal method can be obviously improved perovskite thin film
Crystal property, through frequently with solvent atmosphere have aqueous vapor, dimethylformamide etc..Although perovskite component can divide under aqueous vapor atmosphere
Solve, form unnecessary lead iodide and methylpyridinium iodide ammonium, but it can dissolve crystal grain, and promote that perovskite is thin to a certain extent
The crystal property of film.Dimethylformamide, as the solvent of perovskite precursor, can play good enhancing crystal property, but
Being that its volatility is higher, boiling point is relatively low, these characteristics hinder its application in solvent anneal.The present invention propose two
Annealing under methyl sulfoxide atmosphere can be obviously enhanced the crystal property of perovskite thin film.The method is applied to perovskite photovoltaic
Battery can be obviously improved the energy conversion efficiency of device.
Summary of the invention
In order to solve the background technology dissatisfactory problem of perovskite thin film crystal property, it is an object of the invention to provide one
Kind can promote the method for annealing of perovskite crystalline: the solvent anneal under dimethyl sulfoxide atmosphere.
The technical solution used in the present invention is a kind of method promoting perovskite crystalline: the method is first heavy in substrate
Long-pending perovskite thin film, is then placed in the dimethyl sulfoxide atmosphere that temperature is 100 DEG C annealing crystallization 2 minutes～2 little by this thin film
Time.
Such scheme use solution spin coating or vapour deposition process to prepare the perovskite that thickness range is 50～600nm thin
Film.
The perovskite crystalline thin film that method for annealing described in such scheme obtains is applied in battery structure: transparent lead
Electrolemma, hole transmission layer, perovskite thin film, electron transfer layer, metal electrode.
The present invention uses solvent anneal method, and perovskite thin film is placed in annealing crystallization under dimethyl sulfoxide atmosphere.Whole
Course of reaction power consumption is low, preparation technology is simple.The crystallinity of the perovskite crystalline thin film prepared is remarkably reinforced, and crystallite dimension expands
Big and reduce the defect state density of crystalline membrane.The perovskite crystalline thin film prepared by the method is applied to solaode
In can substantially reduce carrier defect state density, there is prospects for commercial application widely.
Advantages of the present invention:
1, reaction condition is gentle, energy consumption is low.Perovskite gets final product annealing crystallization at 100 DEG C.
2, the crystal property of thin film, and the energy conversion efficiency of boost device can be obviously improved.
3, the annealing under dimethyl sulfoxide atmosphere has high duplication, and energy stable application is in commercial production.
Accompanying drawing explanation
Fig. 1 is the process chart of the present invention；
Fig. 2 is the schematic diagram of the present invention；
Fig. 3 is that the Electronic Speculum pattern that in the present invention, thermal annealing is annealed with dimethyl sulfoxide compares；
Fig. 4 is the perovskite battery performance of dimethyl sulfoxide annealing in the present invention.
Fig. 5 be surface topography that in the present invention, perovskite thin film is annealed under different atmosphere (upper row) with Cross Section Morphology (under
Row) photo.It is followed successively by thermal annealing (nitrogen environment N from left to right2, aqueous vapor annealing H2O, gamma-hydroxybutyric acid lactone ambient anneal
GBL, dimethylformamide ambient anneal DMF and dimethyl sulfoxide ambient anneal DMSO.
Detailed description of the invention
The invention will be further described with example below in conjunction with the accompanying drawings.
The substrate of glass that will be covered with ITO is washed 30 minutes with detergent, acetone, EtOH Sonicate successively, blows by nitrogen gun
Dry.Spin-coating method is used to prepare the CH3NH3PbI that thickness is 300nm3-xClxPerovskite light absorbing zone.5 points are heated under 100 degrees Celsius
Clock.Sample complete for preannealing is transferred on the warm table of 100 DEG C.The crucible of a diameter 1cm is placed, with shifting on warm table
Liquid rifle extracts 10 μ l dimethyl sulfoxide and instills crucible, then covers sample and crucible with glass cover rapidly.Crucible is heated, the inside
Solvent become steam raising out, in lid, define dimethyl sulfoxide solvent atmosphere.The solvent anneal time is 30min.
As shown in Figure 1.
Annealing theory under dimethyl sulfoxide solvent atmosphere is as shown in Figure 2.Perovskite thin film is placed on an airtight sky
In, solvent molecule can condense in film surface dissolving films composition, simultaneously high temperature substrate can allow again these condense molten
Agent is evaporated again, and condensation-evaporation that cover inside occurs is a dynamic thermal balance process.Thin film on flat plate heat is with limited
Vapor pressure solvent jointly act on, the solvent molecule of evaporation can't cause the dissolving on a large scale of thin film, but cause surface and
Perforated forms liquid or semi liquid state phase.This liquid phase can act the adhesive effect being similar to glue, bond two crystal grain it
Between contiguous zone.Perovskite atom enters in liquid phase adhesive and at liquid-solid interface recrystallization.This recrystallization process can be led
Cause the polymerization of crystal grain in thin film, grow bigger crystal grain.
Fig. 3 gives the perovskite grain size obtained of annealing under different atmosphere.Upper row is perovskite thin film surface shape
Looks, lower row is corresponding Cross Section Morphology.It is followed successively by from left to right in thermal annealing (nitrogen environment), aqueous vapor annealing, gamma-hydroxybutyric acid
Ester ambient anneal, dimethylformamide ambient anneal and dimethyl sulfoxide ambient anneal.It can be seen that the nitrogen of routine from figure
Crystallite dimension obtained by thermal annealing after about 300nm, amplification as shown in Figure 4.Annealing under water vapour atmosphere is the brightest
The aobvious crystal property improving thin film, similar with thermal annealing.Gamma-hydroxybutyric acid lactone ambient anneal and dimethylformamide atmosphere are moved back
Fire is remarkably improved grain size, the most about 500nm, but compared with dimethyl sulfoxide atmosphere, the crystal property brought carries
Rise limited.Perovskite thin film anneal under dimethyl sulfoxide solvent atmosphere after crystallite dimension up to 1000nm.
The performance of the perovskite thin film for being formed under checking different solvents atmosphere, above-mentioned several perovskite thin films are done by we
Become solaode.The battery structure used in the present embodiment is: indium tin oxide transparent conductive semiconductor film/3,4-ethylene two
Oxygen thiophene monomer polymer: poly styrene sulfonate/perovskite/fullerene derivate/silver electrode.Wherein, 3,4-enedioxies
Thiophene monomer polymer: poly styrene sulfonate is hole mobile material, fullerene derivate is common electron transport material.
It makes is spin coating hole transmission layer, perovskite, electron transfer layer successively on nesa coating, finally uses vapour deposition method deposition
The silver electrode of a layer thickness about 100nm.
Fig. 5 show under different solvents atmosphere the perovskite solar cell photoelectric characteristic curve of correspondence of annealing.Nitrogen gas
Lower its open-circuit voltage of respective devices of atmosphere annealing is 0.93V, and short-circuit current density is 16.9mA/cm2, fill factor, curve factor is 0.53, energy
Amount conversion efficiency is 8.34%.Under water ambient anneal, its open-circuit voltage of respective devices is 0.95V, and short-circuit current density is
18.7mA/cm2, fill factor, curve factor is 0.51, and energy conversion efficiency is 8.99%.Gamma-hydroxybutyric acid lactone ambient anneal correspondence device
Its open-circuit voltage of part is 0.92V, and short-circuit current density is 20.9mA/cm2, fill factor, curve factor is 0.64, and energy conversion efficiency is
12.29%.Dimethylformamide its open-circuit voltage of ambient anneal respective devices is 0.91V, and short-circuit current density is 20.2mA/
cm2, fill factor, curve factor is 0.62, and energy conversion efficiency is 11.29%.Dimethyl sulfoxide annealing its open-circuit voltage of respective devices is
0.93V, short-circuit current density is 20.9 mA/cm2, fill factor, curve factor is 0.68, and energy conversion efficiency is 13.21%.
Thus it is seen that after using dimethyl sulfoxide annealing, battery performance is largely increased, and illustrates by dimethyl sulfoxide
The perovskite thin film superior performance that annealing is formed.
Claims (3)
1. the method promoting perovskite crystalline: first the method deposits a perovskite thin film in substrate, then that this is thin
Film is placed in annealing crystallization 2 minutes～2 hours in the dimethyl sulfoxide atmosphere that temperature is 100 DEG C.
A kind of method promoting perovskite crystalline the most as claimed in claim 1, it is characterised in that use molten in described method
Liquid spin coating or vapour deposition process prepare the perovskite thin film that thickness range is 50～600nm.
A kind of method promoting perovskite crystalline the most as claimed in claim 1, it is characterised in that described in described method
The perovskite crystalline thin film that method for annealing obtains is applied in battery structure: nesa coating, hole transmission layer, perovskite are thin
Film, electron transfer layer, metal electrode.
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| CN201610575139.8A CN106128954B (en) | 2016-07-21 | 2016-07-21 | A method of promoting perovskite crystalline |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068875A (en) * | 2017-03-10 | 2017-08-18 | 武汉大学 | A kind of method for optimizing perovskite crystal film morphology |
| CN108987577A (en) * | 2017-06-02 | 2018-12-11 | 杭州纤纳光电科技有限公司 | A kind of perovskite thin film equipment for after-treatment and application method and application |
| CN109904319A (en) * | 2019-01-29 | 2019-06-18 | 安徽大学 | The flat crystal of large scale perovskite, calcium titanium ore bed preparation method and solar battery |
| CN110311038A (en) * | 2019-06-21 | 2019-10-08 | 南京邮电大学 | A method of increasing perovskite solar battery perovskite film layer crystal particle size |
| CN111403610A (en) * | 2020-03-19 | 2020-07-10 | 武汉理工大学 | High-performance organic-inorganic hybrid perovskite photoelectric material and preparation method and application thereof |
| CN113594396A (en) * | 2021-07-08 | 2021-11-02 | 浙江大学 | Solvent atmosphere controlled perovskite in-situ film forming method and product and application thereof |
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| CN109860403B (en) * | 2019-04-10 | 2022-07-19 | 西南石油大学 | Post-processing method for obtaining large-grain high-quality perovskite film and application thereof |
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| CN104934304A (en) * | 2015-06-04 | 2015-09-23 | 苏州大学 | Method for obtaining black cubic crystal system perovskite film through inductive regulation and control of mixed solvent at normal temperature |
| CN105098080A (en) * | 2015-08-17 | 2015-11-25 | 电子科技大学 | Method for manufacturing organic and inorganic perovskite crystal film |
| CN105609635A (en) * | 2016-03-17 | 2016-05-25 | 东华大学 | Method for preparing high-crystallinity perovskite thin film |
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| CN104934304A (en) * | 2015-06-04 | 2015-09-23 | 苏州大学 | Method for obtaining black cubic crystal system perovskite film through inductive regulation and control of mixed solvent at normal temperature |
| CN105098080A (en) * | 2015-08-17 | 2015-11-25 | 电子科技大学 | Method for manufacturing organic and inorganic perovskite crystal film |
| CN105609635A (en) * | 2016-03-17 | 2016-05-25 | 东华大学 | Method for preparing high-crystallinity perovskite thin film |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068875A (en) * | 2017-03-10 | 2017-08-18 | 武汉大学 | A kind of method for optimizing perovskite crystal film morphology |
| CN107068875B (en) * | 2017-03-10 | 2019-06-25 | 武汉大学 | A method of optimization perovskite crystal film morphology |
| CN108987577A (en) * | 2017-06-02 | 2018-12-11 | 杭州纤纳光电科技有限公司 | A kind of perovskite thin film equipment for after-treatment and application method and application |
| CN108987577B (en) * | 2017-06-02 | 2024-02-02 | 杭州纤纳光电科技有限公司 | Perovskite film post-treatment equipment, use method and application |
| CN109904319A (en) * | 2019-01-29 | 2019-06-18 | 安徽大学 | The flat crystal of large scale perovskite, calcium titanium ore bed preparation method and solar battery |
| CN109904319B (en) * | 2019-01-29 | 2022-11-18 | 安徽大学 | Preparation method of large-size perovskite flat crystal and perovskite layer and solar cell |
| CN110311038A (en) * | 2019-06-21 | 2019-10-08 | 南京邮电大学 | A method of increasing perovskite solar battery perovskite film layer crystal particle size |
| CN110311038B (en) * | 2019-06-21 | 2022-08-26 | 南京邮电大学 | Method for increasing crystal grain size of perovskite film layer of perovskite solar cell |
| CN111403610A (en) * | 2020-03-19 | 2020-07-10 | 武汉理工大学 | High-performance organic-inorganic hybrid perovskite photoelectric material and preparation method and application thereof |
| CN113594396A (en) * | 2021-07-08 | 2021-11-02 | 浙江大学 | Solvent atmosphere controlled perovskite in-situ film forming method and product and application thereof |
| CN113594396B (en) * | 2021-07-08 | 2022-08-05 | 浙江大学 | Solvent atmosphere controlled perovskite in-situ film forming method and product and application thereof |
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