CN113193123A - Double-interface-layer-modified efficient perovskite solar cell and preparation method thereof - Google Patents

Double-interface-layer-modified efficient perovskite solar cell and preparation method thereof Download PDF

Info

Publication number
CN113193123A
CN113193123A CN202110380752.5A CN202110380752A CN113193123A CN 113193123 A CN113193123 A CN 113193123A CN 202110380752 A CN202110380752 A CN 202110380752A CN 113193123 A CN113193123 A CN 113193123A
Authority
CN
China
Prior art keywords
layer
pmai
solar cell
perovskite
cspbbr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110380752.5A
Other languages
Chinese (zh)
Other versions
CN113193123B (en
Inventor
刘明侦
曾成松
曾鹏
赵海峰
李发明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN202110380752.5A priority Critical patent/CN113193123B/en
Publication of CN113193123A publication Critical patent/CN113193123A/en
Application granted granted Critical
Publication of CN113193123B publication Critical patent/CN113193123B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention provides a double-interface layer modified high-efficiency perovskite solar cell which comprises transparent conductive glass, an electron transmission layer, a perovskite absorption layer, a PMAI layer and CsPbBr which are sequentially arranged3Quantum dots, a hole transport layer and a metal electrode; wherein the PMAI layer and CsPbBr3The preparation method of the quantum dot comprises the following steps: spin-coating a PMAI solution with isopropanol as a solvent and 1-15 mg/mL of concentration on the perovskite absorption layer to obtain a PMAI layer; then, the solvent is chlorobenzene and CsPbBr with the concentration of 2-10 mg/mL3The quantum dot solution is coated on the PMAI layer in a spin mode to obtain CsPbBr3And (4) quantum dots. The invention adopts a PMAI layer and CsPbBr3The quantum dots are used as a double interface layer to modify a perovskite absorption layer, a PMAI layer and CsPbBr3The synergistic effect of the quantum dots improves the charge transmission performance of the interface,a high efficiency perovskite solar cell is realized.

Description

Double-interface-layer-modified efficient perovskite solar cell and preparation method thereof
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a double-interface-layer-modified efficient perovskite solar cell and a preparation method thereof.
Background
The new energy is the power foundation of scientific development and is an important strategy for solving the problem of energy shortage and environmental pollution. Solar energy is used as renewable clean energy, has the advantages of environmental protection and abundant reserves, and is paid much attention to in a plurality of new energy sources. The solar cell technology is a key technology for directly converting solar energy into electric energy, and is roughly divided into three types, namely a first-generation silicon-based solar cell, a second-generation thin-film solar cell, and a third-generation novel solar cell which is currently and intensively researched, wherein the third-generation novel solar cell is a quantum dot solar cell, an organic solar cell, a Perovskite Solar Cell (PSCs) and the like.
Due to the advantages of excellent photoelectric property, simple preparation process, low preparation cost and the like of the perovskite solar cell, the Photoelectric Conversion Efficiency (PCE) is increased from 3.8% to 25.5% in short decades, and the perovskite solar cell can almost match with a commercial silicon-based solar cell. The theoretical limit efficiency of Shockley-Queisser (Shockley-Quetiser) of the perovskite solar cell is 33%, and compared with other types of photovoltaic devices, the PCE still has a great promotion space. However, due to the ionic characteristics and preparation processes of perovskite materials, various types of defects exist on the perovskite surface, mainly including iodine ion vacancies, lead ion gaps, Pb-I inversion defects, and unbound lead atom defects. These defects can lead to extensive non-radiative recombination, inhibit separation and extraction of interfacial charges, and reduce the efficiency and stability of the device.
Interfacial passivation has proven to be the most effective method to address the above defect problems, and therefore various functional interfacial materials are used for defect passivation of the perovskite surface to improve the efficiency and stability of the perovskite solar cell. At present, most researches are based on an interface layer, or interface layers are respectively deposited on two sides of a perovskite layer, so that the photovoltaic performance of the device is improved. However, the functionality of an interfacial layer is limited and it is difficult to achieve a large increase in efficiency.
Disclosure of Invention
Aiming at the problem of single function of an interface layer in the prior art, the invention provides a double-interface-layer-modified efficient perovskite solar cell and a preparation method thereof, and the efficiency and the stability of the perovskite solar cell are effectively improved by utilizing the synergistic effect of the double interface layers.
In order to achieve the above purpose, the invention provides the following technical scheme:
the high-efficiency perovskite solar cell modified by the double interface layers comprises transparent conductive glass, an electron transmission layer, a perovskite absorption layer, a hole transmission layer and metal electrodes which are sequentially arranged from bottom to top, and is characterized in that a benzyl ammonium iodide (PMAI) layer and CsPbBr are sequentially arranged between the perovskite absorption layer and the hole transmission layer3And (4) quantum dots.
Further, the thickness of the PMAI layer does not exceed 10 nm.
A preparation method of a double-interface-layer-modified efficient perovskite solar cell is characterized by comprising the following steps:
step 1: depositing an electron transport layer on the transparent conductive glass;
step 2: preparing a perovskite absorption layer on the electron transport layer;
and step 3: dissolving benzyl ammonium iodide (PMAI) in isopropanol to obtain a PMAI solution with the concentration of 1-15 mg/mL, and spin-coating the PMAI solution on the perovskite absorption layer obtained in the step 2 to obtain a PMAI layer;
and 4, step 4: reacting CsPbBr3The quantum dots are dissolved in chlorobenzene to obtain CsPbBr with the concentration of 2-10 mg/mL3Spin coating quantum dot solution on the PMAI layer obtained in the step 3 to obtain CsPbBr3Quantum dots;
and 5: CsPbBr obtained in step 43And sequentially preparing a hole transport layer and a metal electrode on the quantum dots.
Further, the material of the electron transport layer in step 1 is tin dioxide or titanium dioxide.
Further, in step 2, the perovskite absorption layer is FA1-xMAxPbI3PerovskiteAbsorption layer, (FAPBI)3)1-x(MAPbBr3)xPerovskite absorption layer or Cs0.2FA0.8PbI3A perovskite absorption layer.
Further, step 2 preparation of FA1-xMAxPbI3The perovskite absorption layer comprises the following specific steps:
step 2.1: mixing lead iodide (PbI)2) Dissolving in mixed solvent of DMF (N, N-dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 9:1 to obtain PbI2PbI with a concentration of 1.3 to 1.5M2Solution of PbI2Spin coating the solution on the electron transport layer obtained in the step 1 to obtain PbI2A film;
step 2.2: mixing formamidine iodine (FAI), methylamine iodine (MAI) and methylamine chloride (MACl) according to a mass ratio of 30: 2: 3 in proportion to obtain a mixed solution with the concentration of FAI of 90mg/mL, and spin-coating the mixed solution on the PbI obtained in the step 2.12Obtaining a mixed film on the film;
step 2.3: annealing the mixed film obtained in the step 2.2 at 150 ℃ for 15min to prepare FA1-xMAxPbI3A perovskite absorption layer.
Further, the spin coating conditions in step 3 are: spin coating for 30s at a rotation speed of 4000-6000 rpm.
Further, the spin coating conditions in step 4 are: spin coating for 30s at a rotation speed of 4000-6000 rpm.
Furthermore, the material of the metal electrode in step 5 is a metal material such as Au, Ag, or Cu.
The invention has the beneficial effects that:
1. the invention adopts a benzyl ammonium iodide (PMAI) layer and CsPbBr3The quantum dots are used as double interface layers to modify the perovskite absorption layer; wherein, the PMAI layer can effectively passivate the defect on the surface of the perovskite absorption layer, reduce the non-radiative recombination of the interface and be beneficial to the transfer of the interface charge, and the CsPbBr layer3The quantum dots can further promote the extraction and transmission of carriers, the PMAI layer and the CsPbBr3The synergistic effect of the quantum dots improves the charge transmission performance of the interface and realizes high efficiencyThe efficiency of the perovskite solar cell can reach 22.06%, which is beneficial to accelerating the commercialization step of the perovskite solar cell;
2. the invention prepares the PMAI layer and the CsPbBr layer on the surface of the perovskite in sequence by a surface spin coating mode3The quantum dots are simple and controllable to operate, and have the advantage of low energy consumption.
Drawings
FIG. 1 is a schematic structural diagram of a double-interface layer modified high-efficiency perovskite solar cell obtained in example 1 of the present invention;
FIG. 2 shows preparation of FA according to example 1 of the present invention1-xMAxPbI3Perovskite absorption layer, PMAI layer and CsPbBr3A flow diagram of quantum dots;
FIG. 3 is a time resolved photoluminescence spectrum TRPL profile of perovskite absorption layers in example 1, comparative example 1 and comparative example 2 of the present invention;
FIG. 4 is an EIS diagram of electrochemical impedance spectra of perovskite solar cells in example 1, comparative example 1 and comparative example 2 of the present invention
FIG. 5 is a statistical graph of photovoltaic parameters of perovskite solar cells obtained in example 1, comparative example 1 and comparative example 2 of the present invention;
fig. 6 is a positive and negative current density-voltage curve diagram of the double-interface layer modified high-efficiency perovskite solar cell obtained in example 1 of the invention.
Detailed Description
The principles and features of the present invention are explained in detail below with reference to the embodiments and the accompanying drawings of the specification:
example 1
In this embodiment, a double-interface layer modified high-efficiency perovskite solar cell (PMAI + QDs) is prepared, and a schematic structural diagram of the device is shown in fig. 1, which sequentially comprises from bottom to top: ITO conductive glass (ITO), SnO2Electron transport layer (SnO)2)、 FA1- xMAxPbI3Perovskite light absorbing layer (Perovskite), PMAI layer (PMAI), CsPbBr3Quantum dots (CsPbBr)3QDs), hole transport layer (Spiro-OMeTAD), metal electrode (Au); the preparation method specifically comprises the following steps:
step 1: cleaning a substrate:
in this embodiment, ITO conductive glass is used as the substrate, i.e., indium-doped tin dioxide (SnO)2:In)；
Firstly, primarily cleaning ITO conductive glass by using a detergent and nano sponge, then washing the ITO conductive glass for a plurality of times by using deionized water, sequentially carrying out ultrasonic treatment on a washed substrate by using acetone, absolute ethyl alcohol and deionized water as solvents, blow-drying the ITO conductive glass after ultrasonic treatment by using nitrogen, and then treating the ITO conductive glass for 12min by using oxygen plasma so as to further remove organic matters on the surface of the substrate and simultaneously enhance the bonding force and adhesive force on the surface of the substrate material;
step 2: preparing an electron transport layer:
tin dioxide SnO is selected in the embodiment2The film is used as an electron transport layer;
SnO purchased from a company with a volume fraction of 15%2Mixing the aqueous solution and deionized water according to the volume ratio of 1:4.5 to obtain SnO2Solution, then SnO2The solution is placed on a stirring table to be stirred for 30min at normal temperature; mixing the stirred SnO2Spin-coating the solution on the substrate obtained in the step 1 by a spin-coating method, wherein the spin-coating procedure is as follows: the spin-coating speed is 4000rpm, the acceleration is 4000rpm, and the spin-coating time is 30 s; then sintering for 30min at the temperature of 150 ℃ to obtain SnO2An electron transport layer;
and step 3: preparation of FA1-xMAxPbI3Perovskite absorption layer:
step 3.1: preparation of PbI2Solution: 691.5mg of PbI were weighed out on an electronic balance2Dissolving the powder in 1mL of mixed solvent with the volume ratio of DMF to DMSO of 9:1, and stirring the solution on a hot bench at 60 ℃ for 5 hours to obtain PbI2A solution;
step 3.2: preparation of a mixed solution a of FAI, MAI, and MACl: weighing 90mg of FAI, 6mg of MAI and 9mg of MACl by using an electronic balance, dissolving the FAI, the MAI and the MACl in 1mL of isopropanol, and stirring the mixture for 30min at normal temperature to obtain a mixed solution A of the FAI, the MAI and the MACl;
step 3.3: will PbI2Of solutions and FAI, MAI and MAClFiltering the mixed solution in a glove box in a nitrogen atmosphere by using a filter head with the diameter of 0.22 mu m;
step 3.4: taking 40 mu L of PbI obtained in step 3.1 in a glove box in nitrogen atmosphere by using a spin coater2Solution spin coating on SnO obtained in step 22On the electron transport layer to obtain PbI2A film; the spin coating program was set up as follows: the rotating speed is 1500rpm, the acceleration is 1500rpm, and the spin coating time is 30 s;
step 3.5: in a glove box under nitrogen atmosphere, 80. mu.L of the mixed solution A of FAI, MAI and MACl obtained in step 3.2 was spin-coated on PbI obtained in step 3.4 using a spin coater2Obtaining a mixed film on the film; the spin coating program was set up as follows: the rotating speed is 2000rpm, the acceleration is 2000rpm, and the spin coating time is 30 s;
step 3.6: annealing the mixed film obtained in the step 3.5, setting the annealing temperature at 150 ℃ and the annealing time at 15min to obtain FA1-xMAxPbI3A perovskite absorption layer;
and 4, step 4: preparing a PMAI layer:
firstly, weighing 9mg of PMAI powder by using an electronic balance, dissolving the PMAI powder in 1mL of isopropanol, and stirring for 30min at normal temperature to obtain a PMAI solution; then spin-coating PMAI solution on FA obtained in step 3.61-xMAxPbI3Obtaining a PMAI layer on the perovskite absorption layer; the spin coating program was set up as follows: the rotating speed is 5000rpm, the acceleration is 5000rpm, and the spin coating time is 30 s;
and 5: preparation of CsPbBr3Quantum dot:
60 mu L of CsPbBr with the solvent of chlorobenzene and the concentration of 5mg/mL3Spin coating the quantum dot solution on the PMAI layer obtained in the step 4 to obtain CsPbBr3Quantum dots; the spin coating program was set up as follows: the rotating speed is 5000rpm, the acceleration is 5000rpm, and the spin coating time is 30 s;
step 6: preparing a hole transport layer:
the invention does not limit the selection of the hole transport layer material, and can be any suitable hole transport layer material; in this example, a composite film formed by 2,2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, lithium bistrifluoromethanesulfonylimide, and 4-tert-butylpyridine was used as a hole transport layer;
73.4mg of 2,2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino are weighed out]9,9' -spirobifluorene, 17.5 mu L of bis (trifluoromethane sulfonyl) imide lithium acetonitrile solution with the concentration of 520mg/mL of bis (trifluoromethane sulfonyl) imide lithium and 28 mu L of 4-tert-butylpyridine, and dissolving the three in 1mL of chlorobenzene to prepare a mixed solution B; spin-coating 40 μ L of the mixed solution B on the CsPbBr obtained in step 53Forming a hole transport layer on the quantum dots;
and 7: preparing a metal electrode:
in this embodiment, a metal Au with a thickness of 100nm is evaporated on the hole transport layer obtained in step 6 by using an evaporation method to serve as a metal electrode, and finally, the double-interface layer modified high-efficiency perovskite solar cell is prepared.
FA preparation for this example as shown in FIG. 21-xMAxPbI3Perovskite absorption layer, PMAI layer and CsPbBr3A flow chart for preparing Quantum Dots (QDs).
Example 2
This example a high efficiency perovskite solar cell modified with a double interface layer was prepared according to the procedure of example 1, differing from example 1 only in that 9mg of PMAI powder was dissolved in 1mL of isopropanol during the preparation of the PMAI layer in step 4, adjusted to 1mg of PMAI powder in 1mL of isopropanol; the other steps are unchanged.
Example 3
This example a high efficiency perovskite solar cell modified with a double interface layer was prepared according to the procedure of example 1, differing from example 1 only in that 9mg of PMAI powder was dissolved in 1mL of isopropanol and adjusted to 15mg of PMAI powder was dissolved in 1mL of isopropanol during the preparation of the PMAI layer in step 4; the other steps are unchanged.
Example 4
This example prepares a double interface layer modified high efficiency perovskite solar cell according to the procedure of example 1, and compared with example 1, the difference is only that: rotation speed in the process of preparing PMAI layer in step 4Degree of 5000rpm, rotation speed adjusted to 4000rpm, CsPbBr prepared in step 53The rotation speed in the process of quantum dots is 5000rpm, and the rotation speed is adjusted to 4000 rpm; the other steps are unchanged.
Example 5
This example prepares a double interface layer modified high efficiency perovskite solar cell according to the procedure of example 1, and compared with example 1, the difference is only that: the rotation speed in the process of preparing the PMAI layer in the step 4 is 5000rpm, the rotation speed is adjusted to 6000rpm, and the CsPbBr prepared in the step 53The rotation speed in the process of quantum dots is 5000rpm, and is adjusted to 6000 rpm; the other steps are unchanged.
Example 6
This example a double-interface layer modified high-efficiency perovskite solar cell was prepared according to the procedure of example 1, and compared with example 1, the difference is only that CsPbBr was prepared at step 53In the process of quantum dots, CsPbBr with the concentration of 5mg/mL is added3The quantum dot solution is adjusted to CsPbBr with the concentration of 2mg/mL3A quantum dot solution; the other steps are unchanged.
Example 7
This example a double-interface layer modified high-efficiency perovskite solar cell was prepared according to the procedure of example 1, and compared with example 1, the difference is only that CsPbBr was prepared at step 53In the process of quantum dots, CsPbBr with the concentration of 5mg/mL is added3The quantum dot solution is adjusted to CsPbBr with the concentration of 10mg/mL3A quantum dot solution; the other steps are unchanged.
Comparative example 1
This comparative example a perovskite solar cell (Control) was prepared according to the procedure of example 1, differing from example 1 only in that: no PMAI layer and CsPbBr were prepared3Quantum dots, i.e. the perovskite solar cell comprises ITO conduction band glass and SnO which are arranged from bottom to top in sequence2The electron transport layer, the Perovskite light absorption layer Perovskite, the hole transport layer Spiro-OMeTAD and the metal electrode Au; the other steps are unchanged.
Comparative example 2
Comparative example the following exampleThe procedure of example 1 produces a perovskite solar cell (PMAI) which differs from example 1 only in that: CsPbBr was not prepared3Quantum dots, i.e. the perovskite solar cell comprises ITO conduction band glass and SnO which are arranged from bottom to top in sequence2The electron transport layer, the Perovskite light absorption layer Perovskite, the PMAI layer, the hole transport layer Spiro-OMeTAD and the metal electrode Au; the other steps are unchanged.
The above examples and comparative examples were analytically tested as follows:
for example 1(PMAI + QDs) with a PMAI layer and CsPbBr3Quantum dot modified FA1-xMAxPbI3Perovskite absorber layer, unmodified FA in comparative example 1(Control)1-xMAxPbI3Perovskite absorber layer, FA modified with PMAI layer in comparative example 2(PMAI)1-xMAxPbI3The time-resolved photoluminescence spectroscopy TRPL analysis was performed on the perovskite absorption layer, and the results are shown in FIG. 3. compared with the perovskite absorption layer without the interface modification layer, the perovskite absorption layer has a longer carrier lifetime after the surface thereof is modified by the PMAI layer, and CsPbBr is further added3After quantum dots, the carrier lifetime is shortened. The change result of the TRPL carrier lifetime shows that the PMAI layer can effectively reduce the non-radiative recombination of the interface carrier, CsPbBr3The quantum dots facilitate the transport of carriers.
The electrochemical impedance spectroscopy EIS analysis of the double-interface-layer-modified high-efficiency perovskite solar cell obtained in example 1(PMAI + QDs), the perovskite solar cell obtained in comparative example 1(Control) and the perovskite solar cell obtained in comparative example 2(PMAI) is carried out, and the results are shown in FIG. 4, compared with the perovskite solar cell of comparative example 1, the charge transfer resistance of the PMAI-interface-modified perovskite solar cell of comparative example 2 is obviously reduced, and CsPbBr is added3After quantum dots are formed, the charge transmission resistance of the perovskite solar cell modified by the PMAI + QDs double interface layer is further reduced, and the charge transmission performance of the interface is remarkably improved.
The high-efficiency perovskite solar cell modified by the double interface layer obtained in example 1(PMAI + QDs), the perovskite solar cell obtained in comparative example 1(Control) and comparative example 2(PMAI) are placed in nitrogenThe photoelectric test is carried out in an air glove box, the effective active area is 0.09 square centimeter, the test condition is standard simulated sunlight AM 1.5, and the temperature is 25 ℃. Photovoltaic parameter statistical plots as shown in fig. 5, open circuit voltage V for the PMAI interface modified perovskite solar cell of comparative example 2 compared to the perovskite solar cell of comparative example 1OCRemarkably improves the yield, and further adds CsPbBr3After quantum dots, open-circuit voltage V of perovskite solar cell modified by PMAI + QDs double interface layerOCFurther promoted and higher efficiency PCE is obtained. The current density-voltage curve diagram is shown in fig. 6, the photoelectric conversion efficiency PCE is as high as 22.06%, which indicates that the efficiency PCE of the device is significantly improved under the synergistic effect of the double interface layers of the perovskite solar cell.

Claims (8)

1. The high-efficiency perovskite solar cell modified by the double interface layers comprises transparent conductive glass, an electron transmission layer, a perovskite absorption layer, a hole transmission layer and metal electrodes which are sequentially arranged from bottom to top, and is characterized in that a PMAI layer and CsPbBr are sequentially arranged between the perovskite absorption layer and the hole transmission layer3And (4) quantum dots.
2. The double interfacial layer modified high efficiency perovskite solar cell according to claim 1, wherein the thickness of the PMAI layer is no more than 10 nm.
3. A preparation method of a double-interface-layer-modified efficient perovskite solar cell is characterized by comprising the following steps:
step 1: depositing an electron transport layer on the transparent conductive glass;
step 2: preparing a perovskite absorption layer on the electron transport layer;
and step 3: dissolving PMAI in isopropanol to obtain a PMAI solution with the concentration of 1-15 mg/mL, and spin-coating the PMAI solution on the perovskite absorption layer to obtain a PMAI layer;
and 4, step 4: reacting CsPbBr3The quantum dots are dissolved in chlorobenzene to obtain CsPbBr with the concentration of 2-10 mg/mL3Quantum dot solution spin-coated on the PMAI layer to obtainCsPbBr3Quantum dots;
and 5: in CsPbBr3And sequentially preparing a hole transport layer and a metal electrode on the quantum dots.
4. The preparation method of the double-interface layer modified high-efficiency perovskite solar cell as claimed in claim 3, wherein the spin coating condition in the step 3 is spin coating for 30s at a rotation speed of 4000-6000 rpm.
5. The preparation method of the double-interface layer modified high-efficiency perovskite solar cell as claimed in claim 3, wherein the spin coating condition in the step 4 is spin coating for 30s at a rotation speed of 4000-6000 rpm.
6. The method for preparing a high-efficiency perovskite solar cell modified by a double interface layer as claimed in claim 3, wherein the material of the electron transport layer in the step 1 is tin dioxide or titanium dioxide.
7. The method for preparing a high-efficiency perovskite solar cell modified by double interface layers as claimed in claim 3, wherein the perovskite absorption layer in the step 2 is FA1-xMAxPbI3Perovskite absorption layer, (FAPBI)3)1-x(MAPbBr3)xPerovskite absorption layer or Cs0.2FA0.8PbI3A perovskite absorption layer.
8. The method for preparing a high-efficiency perovskite solar cell modified by a double interface layer according to claim 3, wherein the metal electrode in the step 5 is made of Au, Ag or Cu.
CN202110380752.5A 2021-04-09 2021-04-09 Double-interface-layer-modified efficient perovskite solar cell and preparation method thereof Active CN113193123B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110380752.5A CN113193123B (en) 2021-04-09 2021-04-09 Double-interface-layer-modified efficient perovskite solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110380752.5A CN113193123B (en) 2021-04-09 2021-04-09 Double-interface-layer-modified efficient perovskite solar cell and preparation method thereof

Publications (2)

Publication Number Publication Date
CN113193123A true CN113193123A (en) 2021-07-30
CN113193123B CN113193123B (en) 2023-04-07

Family

ID=76975398

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110380752.5A Active CN113193123B (en) 2021-04-09 2021-04-09 Double-interface-layer-modified efficient perovskite solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN113193123B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114284443A (en) * 2021-12-22 2022-04-05 电子科技大学 Preparation method of flexible photoelectric detector array
CN114695680A (en) * 2022-03-09 2022-07-01 电子科技大学 Method for preparing perovskite solar cell based on double modified electron transport layers
CN115161027A (en) * 2022-07-05 2022-10-11 安徽大学 Perovskite buried interface material, preparation method and application

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019023052A1 (en) * 2017-07-24 2019-01-31 University Of Pittsburgh-Of The Commonwealth System Of Higher Education Perovskite solar cell configurations
CN110176508A (en) * 2019-06-05 2019-08-27 中南大学 The preparation method of inorganic trans- perovskite solar battery is modified based on quantum dot
CN111211230A (en) * 2020-01-22 2020-05-29 苏州大学 Full-spectrum absorption multilayer perovskite/quantum dot solar cell device and preparation method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019023052A1 (en) * 2017-07-24 2019-01-31 University Of Pittsburgh-Of The Commonwealth System Of Higher Education Perovskite solar cell configurations
CN110176508A (en) * 2019-06-05 2019-08-27 中南大学 The preparation method of inorganic trans- perovskite solar battery is modified based on quantum dot
CN111211230A (en) * 2020-01-22 2020-05-29 苏州大学 Full-spectrum absorption multilayer perovskite/quantum dot solar cell device and preparation method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HYUN-SEOK YOO, NAM-GYU PARK: "《Post-treatment of perovskite film with phenylalkylammonium iodide for hysteresis-less perovskite solar cells》", 《SOLAR ENERGY MATERIALS AND SOLAR CELLS》 *
SECKIN AKIN, ET AL.: "《Cesium-lead based inorganic perovskite quantum-dots as interfacial layer for highly stable perovskite solar cells with exceeding 21% efficiency》", 《NANO ENERGY》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114284443A (en) * 2021-12-22 2022-04-05 电子科技大学 Preparation method of flexible photoelectric detector array
CN114284443B (en) * 2021-12-22 2023-04-07 电子科技大学 Preparation method of flexible photoelectric detector array
CN114695680A (en) * 2022-03-09 2022-07-01 电子科技大学 Method for preparing perovskite solar cell based on double modified electron transport layers
CN115161027A (en) * 2022-07-05 2022-10-11 安徽大学 Perovskite buried interface material, preparation method and application
CN115161027B (en) * 2022-07-05 2023-09-22 安徽大学 Perovskite buried interface material, preparation method and application

Also Published As

Publication number Publication date
CN113193123B (en) 2023-04-07

Similar Documents

Publication Publication Date Title
CN113193123B (en) Double-interface-layer-modified efficient perovskite solar cell and preparation method thereof
CN103296211B (en) Heterojunction solar battery device of organic-two dimensional crystal-inorganic hybridization and preparation method thereof
CN113193124B (en) Perovskite solar cell modified by triethylamine hydrochloride and preparation method thereof
CN109065725A (en) A method of the perovskite solar battery that surfactant prepares efficient stable being added in calcium titanium ore bed
CN111261783B (en) Novel electron transport layer perovskite solar cell and preparation method thereof
CN110112301A (en) It is a kind of regulate and control calcium titanium ore bed crystal growth method and its application in solar cells
Zheng et al. Mesostructured perovskite solar cells based on Zn2SnO4 Single Crystal Mesoporous Layer with efficiency of 18.32%
EP2624305A1 (en) Counter electrode for dye-sensitized solar cell and manufacturing method thereof
CN113725368B (en) NH (NH) 4 NO 3 Perovskite solar cell with modified interface
CN111223989A (en) Amphoteric molecule modified perovskite photovoltaic device and preparation method and application thereof
CN111063806B (en) Perovskite solar cell and preparation method thereof
CN109378388B (en) Efficient ternary organic solar cell and preparation method thereof
CN102779943A (en) High-efficiency organic-inorganic hybrid solar cell and preparation method thereof
CN116634823A (en) Method for preparing passivation layer and crystalline silicon/perovskite laminated solar cell
CN112885967B (en) Double-layer organic solar cell based on delayed fluorescent material and preparation method
CN113421970B (en) Perovskite solar cell with HCl modified tin dioxide as electron transport layer and preparation method thereof
CN115360300A (en) Perovskite solar cell containing ammonium fluoride modified stannic oxide electron transport layer
CN111029467B (en) Method for passivating lower interface of positive perovskite solar cell
Yaghubinia et al. Improvement of perovskite solar cells photovoltaic performance by localized surface plasmon effect of silver-alumina core-shell nanoparticles
CN108461635B (en) A kind of method and its application of boron compound surface modification perovskite thin film
CN110190192B (en) Preparation method of trans-organic-inorganic hybrid perovskite solar cell
CN113421969A (en) Perovskite solar cell with HF modified tin dioxide as electron transport layer and preparation method thereof
CN113707809A (en) Organic solar device electron transport layer composition, organic solar device and preparation method
CN107833970B (en) Surface modification method of perovskite film
CN113421973B (en) Perovskite solar cell with spiro-OMeTAD (antimony sulfide) as hole transport layer and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant