CN115360300A - Perovskite solar cell containing ammonium fluoride modified stannic oxide electron transport layer - Google Patents
Perovskite solar cell containing ammonium fluoride modified stannic oxide electron transport layer Download PDFInfo
- Publication number
- CN115360300A CN115360300A CN202211018859.6A CN202211018859A CN115360300A CN 115360300 A CN115360300 A CN 115360300A CN 202211018859 A CN202211018859 A CN 202211018859A CN 115360300 A CN115360300 A CN 115360300A
- Authority
- CN
- China
- Prior art keywords
- transport layer
- tin dioxide
- ammonium fluoride
- electron transport
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a perovskite solar cell containing an ammonium fluoride modified stannic oxide electron transport layer, and belongs to the technical field of solar cells. The light absorption electrode sequentially comprises a tin dioxide electron transmission layer, a perovskite light absorption layer, a hole transmission layer and a metal electrode from bottom to top, wherein the tin dioxide electron transmission layer is modified by ammonium fluoride. The tin dioxide electron transport layer is improved by the introduction of ammonium fluoride. On one hand, the roughness of the surface of the tin dioxide film is reduced, and the conductivity of the tin dioxide transmission layer is effectively improved; on the other hand, F atoms replace partial hydroxyl oxygen of tin dioxide, so that the defects of the interface of tin dioxide and perovskite are passivated, and the charge extraction is improved, so that better energy level arrangement is realized. Due to lower energy loss, the open circuit voltage and efficiency of the final perovskite solar cell are improved remarkably. In addition, the preparation method is simple in preparation process, mild in production conditions, low in cost and high in repeatability, and is beneficial to commercial application of the perovskite solar cell.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a perovskite solar cell containing an ammonium fluoride modified tin dioxide electron transport layer, in particular to a method for improving the tin dioxide electron transport layer by ammonium fluoride and application of an optimized tin dioxide thin film in the perovskite solar cell.
Background
Under the background of national advocation of 'carbon peak reaching' and 'carbon neutralization', the solar cell has good development prospect as an important renewable clean energy source. In the past decade, organic-inorganic hybrid perovskites have been considered as potential materials for the next generation of photovoltaic technology to replace traditional crystalline silicon because of its unique properties such as tunable band gap, high light absorption, long carrier diffusion length and low cost of fabrication. Due to the fact that the perovskite is widely concerned by people in terms of extraordinary photoelectric characteristics, the photoelectric conversion efficiency of the perovskite solar cell is dramatically increased from 3.8% to 25.5%.
The perovskite device structure can be roughly divided into two types of p-i-n and n-i-p, and the n-i-p battery structure is considered to have more application potential due to low production cost and high power conversion efficiency. The most common n-i-p perovskite cell structure uses dense titanium dioxide and mesoporous titanium dioxide as electron transport layers, which requires high temperature annealing above 400 ℃ and limits the large-scale commercial application of perovskite solar cells. The search for electron transport layers that are stable and energy-level matched for low temperature processing has thus become one of the important scientific topics for the efficient stabilization of perovskite solar cells.
Compared to titanium dioxide, tin dioxide exhibits the following advantageous properties: up to 240cm 2 V -1 s -1 Electron mobility and high conductivity; wide band gap and high transmission; good chemical stability; the flexible large-area perovskite solar cell module can be processed at low temperature and applied to the flexible large-area perovskite solar cell module. However, the conventional tin dioxide has a large number of hydroxyl groups on the surface, so that the interface of the perovskite and the tin dioxide contains high-concentration defects, and the transmission of electrons is blocked, which greatly reduces the conversion efficiency and long-term stability of the perovskite solar cell. Therefore, optimization of the interface between perovskite and tin dioxide is a problem that needs to be solved urgently.
Disclosure of Invention
The problem of perovskite and stannic oxide interface defect among the prior art is solved, the transmission of electron is hindered, this greatly reduced perovskite solar cell's conversion efficiency and stable technical problem for a long time. The invention provides a method for effectively passivating interface defects by introducing ammonium fluoride into a tin dioxide precursor solution. Fluorine atoms can effectively passivate the surface hydroxyl defects of tin dioxide, reduce the loss of open-circuit voltage and further improve the efficiency and stability of the perovskite solar cell. In addition, the low cost of ammonium fluoride is beneficial to the large-scale production of perovskite battery devices.
According to the first aspect of the invention, the perovskite solar cell containing the ammonium fluoride modified stannic oxide electron transport layer comprises a stannic oxide electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode from bottom to top, wherein the stannic oxide electron transport layer is modified by ammonium fluoride.
Preferably, the ammonium fluoride modification reduces the roughness of the surface of the tin dioxide film and improves the conductivity of the tin dioxide transmission layer; and fluorine atoms replace part of hydroxyl oxygen of the tin dioxide, so that the defects of the interface of the tin dioxide and the perovskite are passivated.
Preferably, the thickness of the tin dioxide electron transport layer is 30-100 nm.
Preferably, the perovskite light-absorbing layer is MAPbI 3 、FAPbI 3 、CsPbI 3 、(FAPbI 3 ) 0.87 (MAPbBr 3 ) 0.13 、Cs 0.05 (MA 0.17 FA 0.83 ) 0.95 Pb(I 0.83 Br 0.17 ) Or FA 0.83 Cs 0.17 PbI 3 (ii) a The hole transport layer is 2,2,7,7-tetra [ N, N-di (4-methoxyphenyl) amino]-9,9-spirobifluorene or poly [ bis (4-phenyl) (2,4,6-trimethylphenyl) amine](ii) a The metal electrode is gold, silver or copper.
According to another aspect of the invention, a preparation method of any perovskite solar cell containing an ammonium fluoride modified tin dioxide electron transport layer is provided, and comprises the following steps:
(1) Adding ammonium fluoride into the tin dioxide dispersion liquid, and fully and uniformly mixing to obtain a precursor;
(2) Spin-coating the precursor obtained in the step (1) on a substrate, and annealing to obtain an electron transport layer;
(3) And (3) sequentially preparing a perovskite light absorption layer, a hole transport layer and a metal electrode on the electron transport layer obtained in the step (2), and obtaining the perovskite solar cell containing the ammonium fluoride modified stannic oxide electron transport layer.
Preferably, the mass of the ammonium fluoride is 1-40% of the mass of the tin dioxide.
Preferably, in the step (2), the annealing temperature is 100-180 ℃ and the annealing time is 20-40 min.
Preferably, in the step (2), the spin speed is 3000-5000 rpm, and the spin acceleration is 1000-2000 rpm/s.
Generally, compared with the prior art, the technical scheme conceived by the invention mainly has the following technical advantages:
(1) According to the invention, the ammonium fluoride is introduced to improve the tin dioxide electron transport layer, so that the roughness of the surface of the tin dioxide film is reduced, the conductivity of the tin dioxide transport layer is effectively improved, F atoms replace part of hydroxyl oxygen of tin dioxide, the defects of the tin dioxide and perovskite interface are passivated, and the charge extraction is improved, so that better energy level arrangement is caused. Due to lower energy loss, the open circuit voltage and efficiency of the final perovskite solar cell are improved remarkably. In addition, the preparation method is simple in preparation process, mild in production conditions, low in cost and high in repeatability, and is beneficial to commercial application of the perovskite solar cell.
(2) The present invention is the above-mentioned SnO 2 -NH 4 The F electron transport layer is applied to the n-i-p type perovskite solar cell, the open-circuit voltage is increased by 70mV averagely, the highest photoelectric conversion cell efficiency reaches 22.12%, and meanwhile, the thermal stability and the humidity stability of the perovskite solar cell device are obviously improved.
(3) The preparation method is simple in preparation process, mild in production condition, low in cost and high in repeatability, and is beneficial to commercial application of the perovskite solar cell.
Drawings
FIG. 1 is a SnO-based alloy obtained in example 1 of the present invention 2 -NH 4 SEM (500 nm on scale) cross-section of perovskite solar cell of F electron transport layer.
FIG. 2 is a diagram of a conventional SnO in a comparative example of the present invention 2 Electron transport layer and SnO in example 1 2 -NH 4 Atomic force microscopy 3D AFM schematic of the F electron transport layer.
FIG. 3 is a diagram showing a conventional SnO in a comparative example of the present invention 2 Electron transport layer and SnO in example 1 2 -NH 4 The X-ray photoelectron spectroscopy XPS plot of the F electron transport layer is based on Sn, O and F elements.
Fig. 4 is a current density-voltage graph of the perovskite solar cell obtained in comparative example and example 1 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the respective embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention relates to a method for improving a stannic oxide electron transport layer by ammonium fluoride and preparation of a perovskite solar cell, which comprises the steps of introducing ammonium fluoride into a stannic oxide precursor, preparing an ammonium fluoride modified stannic oxide electron transport layer, depositing a perovskite light absorption layer, spin-coating a hole transport layer and carrying out thermal evaporation on a metal electrode; the molecular formula of the ammonium fluoride is as follows: NH (NH) 4 F, the tin dioxide transport layer after ammonium fluoride improvement was named: snO 2 -NH 4 F。
The invention discloses a method for preparing a perovskite solar cell by improving a tin dioxide film through ammonium fluoride, which comprises the following steps:
(1) Adding a certain amount of ammonium fluoride into the tin dioxide dispersion liquid and dispersing in an ultrasonic machine for 30 minutes;
(2) The ammonium fluoride stannic oxide precursor after ultrasonic treatment is spin-coated on transparent conductive glass or flexible transparent conductive glassPreparation of SnO on a substrate 2 -NH 4 F, annealing the electron transport layer;
(3) SnO obtained in step (2) 2 -NH 4 Sequentially preparing a perovskite light absorption layer, a hole transport layer and a metal electrode on the F electron transport layer to finally obtain the SnO-based material 2 -NH 4 And the perovskite solar cell device of the F electron transport layer.
In some embodiments, the tin dioxide dispersion in step (1) is an aqueous tin dioxide solution with a mass fraction of 2-5%.
In some embodiments, the spin coating conditions in step (2) are: spin coating for 30s at 3000-5000 rpm of rotation speed and 1000-2000 rpm/s of rotation acceleration.
In some embodiments, the annealing conditions in step (2) are: annealing at 100-180 deg.c for 20-40 min.
In some embodiments, the transparent conductive glass in step (2) is ITO or FTO glass, and the flexible transparent conductive substrate is a polyester film (PEN or PET).
In some embodiments, snO 2 -NH 4 The thickness of the F electron transmission layer is 30-100 nm.
In some embodiments, the cell structure is an n-i-p type perovskite solar cell, and the perovskite light absorption layer can be MAPbI 3 、FAPbI 3 、CsPbI 3 、(FAPbI 3 ) 0.87 、(MAPbBr 3 ) 0.13 、Cs 0.05 (MA 0.17 FA 0.83 ) 0.95 Pb(I 0.83 Br 0.17 ) Or FA 0.83 Cs 0.17 PbI 3 (ii) a The hole transport layer is 2,2,7,7-tetra [ N, N-di (4-methoxyphenyl) amino]-9,9-spirobifluorene (Spiro-OMeTAD) or poly [ bis (4-phenyl) (2,4,6-trimethylphenyl) amine](PTAA); the metal electrode is gold (Au), silver (Ag) or copper (Cu).
Example 1
In this example, a tin dioxide electron transport layer with 10% ammonium fluoride (the mass of ammonium fluoride is 10% of the mass of tin dioxide) is prepared and applied to perovskite solar energy, and a cross-section SEM schematic diagram of the device is shown in fig. 1, which sequentially includes: ITO/SnO 2 -NH 4 F/perovskite/Spiro-OMeTAD/Au。
The preparation method comprises the following steps:
step 1: substrate cleaning:
in the embodiment, ITO conductive glass is selected as a substrate, the size of the ITO conductive glass is 20mm-20mm, the ITO conductive glass is placed in a designated container, ultrasonic cleaning is respectively carried out in deionized water, acetone and isopropanol for 20min, the ITO substrate after ultrasonic treatment is dried by using nitrogen, and then the surface adhesion is enhanced by using oxygen plasma for 10 min.
Step 2: preparation of SnO 2 -NH 4 F electron transport layer:
step 2.1: weighing 3.7mg of ammonium fluoride powder by using an electronic balance, dissolving the ammonium fluoride powder in 1mL of deionized water, and stirring for 1h to obtain an ammonium fluoride solution; mixing and ultrasonically dispersing a purchased 15% tin dioxide aqueous solution, an ammonium fluoride solution and deionized water according to a volume ratio of 1 2 -NH 4 And F, precursor solution.
Step 2.2: draw 200. Mu.L of SnO with pipette 2 -NH 4 F, coating the precursor solution on the ITO substrate obtained in the step 1 in a spinning manner; the spin coating conditions were: the rotating speed is 4000rpm, the acceleration is 2000rpm/s, and the spin coating time is 30s; then annealing for 30min at 150 ℃ on a heating plate to obtain SnO 2 -NH 4 And the F electron transport layer is about 40nm thick and is transferred into a glove box for standby.
And step 3: preparation (FAPBI 3) 0.87 (MAPbBr3) 0.13 Perovskite light-absorbing layer:
step 3.1: 645.4mg of PbI were weighed on an electronic balance 2 The powder was dissolved in 1mL of a mixed solvent of N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) in a volume ratio of 9:1, and then stirred on a hot plate at 70 ℃ overnight to give 1.4M PbI 2 Solution A.
Step 3.2: 110mg of FAI, 11mg of MABr and 12mg of MACl were weighed by an electronic balance and dissolved in 1.5mL of isopropyl alcohol (IPA), and stirred at room temperature for 2 hours to obtain a mixed solution B of FAI/MABr/MACl.
Step 3.3: sucking 50 mu L of solution A and spin-coating on SnO under the condition of argon atmosphere glove box 2 -NH 4 F an ITO substrate of an electron transport layer,annealing at 70 deg.C for 1min to obtain PbI 2 A film. The spin speed was 1500rpm, the acceleration was 3000rpm/s, and the spin time was 30s.
Step 3.4: waiting for PbI in step 3.3 2 The film was cooled to room temperature and 90. Mu.L of solution B was pipetted and spin-coated onto PbI 2 The spin-coating speed on the film was 1600rpm, the acceleration was 3000rpm/s, and the spin-coating time was 30s.
Step 3.5: rapidly transferring the film obtained in the step 3.4 to an air atmosphere with 30-40% humidity, and annealing at 150 ℃ for 20min to obtain the film (FAPBI 3) 1-x (MAPbBr3) x A perovskite light absorbing layer.
And 4, step 4: preparing a Spiro-OMeTAD hole transport layer:
a variety of hole transport layers can be selected for use in the present invention, in this example 72.3mg of 2,2,7,7-tetrakis [ N, N-bis (4-methoxyphenyl) amino]-9,9-spirobifluorene (Spiro-OMeTAD), 17.5. Mu.L lithium bistrifluoromethanesulfonimide (LiTFSI) and 28.8. Mu.L tert-butylpyridine (TBP) were dissolved in 1mL chlorobenzene solvent and stirred for 30min to give solution C. Then 30. Mu.L of solution C were spin-coated on (FAPBI 3) 0.87 (MAPbBr3) 0.13 And obtaining a Spiro-OMeTAD hole transport layer on the surface of the perovskite light absorption layer, wherein the rotating speed is 3000rpm, the acceleration is 2000rpm/s, and the time is 30s.
And 5: and (3) depositing a metal electrode Au:
in the embodiment, a vacuum thermal evaporation method is adopted to evaporate gold Au with the thickness of 80nm on the hole transport layer obtained in the step 4 through a mask plate to serve as a metal electrode, and finally, a complete perovskite solar cell device is obtained.
Example 2
This example prepared 5% ammonium fluoride (ammonium fluoride mass 5% of tin dioxide mass%) additive tin dioxide electron transport layer and applied to perovskite solar energy according to the procedure of example 1, with the only difference compared to example 1 in that SnO was prepared in step 2.1 2 -NH 4 In the process of the precursor solution, 3.7mg of ammonium fluoride powder is dissolved in 1mL of deionized water, and 0.37mg of ammonium fluoride powder is dissolved in 1mL of deionized water; the other steps are unchanged.
Example 3
This example a tin dioxide electron transport layer with 5% ammonium fluoride (mass of ammonium fluoride is 5% of the mass of tin dioxide) addition was prepared according to the procedure of example 1 and applied to perovskite solar energy, differing only in the preparation of SnO in step 2.1 compared to example 1 2 -NH 4 In the process of the precursor solution, 3.7mg of ammonium fluoride powder is dissolved in 1mL of deionized water, and 1.85mg of ammonium fluoride powder is dissolved in 1mL of deionized water; the other steps are unchanged.
Example 4
This example a 15% ammonium fluoride (ammonium fluoride mass 15% of tin dioxide mass%) added tin dioxide electron transport layer was prepared and applied to perovskite solar energy following the procedure of example 1, differing from example 1 only in the preparation of SnO at step 2.1 2 -NH 4 In the process of the precursor solution F, 3.7mg of ammonium fluoride powder is dissolved in 1mL of deionized water, and 5.55mg of ammonium fluoride powder is dissolved in 1mL of deionized water; the other steps are unchanged.
Example 5
This example a 20% ammonium fluoride (ammonium fluoride mass 20% of tin dioxide mass%) added tin dioxide electron transport layer was prepared and applied to perovskite solar energy following the procedure of example 1, differing only in the preparation of SnO at step 2.1 as compared to example 1 2 -NH 4 In the process of the precursor solution F, 3.7mg of ammonium fluoride powder is dissolved in 1mL of deionized water, and 7.4mg of ammonium fluoride powder is adjusted to be dissolved in 1mL of deionized water; the other steps are unchanged.
Example 6
This example a tin dioxide electron transport layer with 40% ammonium fluoride (the mass of ammonium fluoride is 40% of the mass of tin dioxide) addition was prepared according to the procedure of example 1 and applied to perovskite solar energy, differing only in the preparation of SnO in step 2.1 compared to example 1 2 -NH 4 In the process of the precursor solution F, 3.7mg of ammonium fluoride powder is dissolved in 1mL of deionized water, and 14.8mg of ammonium fluoride powder is adjusted to be dissolved in 1mL of deionized water; the other steps are unchanged.
Comparative example
This example a comparative tin dioxide electron transport layer example was prepared according to the procedure of example 1 without the addition of ammonium fluoride and applied to perovskite solar energy, differing from example 1 only in the preparation of SnO at step 2.1 2 -NH 4 In the process of the precursor solution F, 3.7mg of ammonium fluoride powder is dissolved in 1mL of deionized water and stirred for 1h to obtain an ammonium fluoride solution; mixing a purchased 15% tin dioxide aqueous solution, an ammonium fluoride solution and deionized water according to a volume ratio of 1; the purchased 15% tin dioxide aqueous solution and deionized water were mixed in the volume ratio of 1:6 with the other steps unchanged.
The above examples and comparative examples were analytically tested as follows:
SnO base obtained in example 1 2 -NH 4 A cross-sectional scanning electron microscope SEM schematic 1 of the perovskite solar cell of the F electron transport layer is shown, from which the entire device structure can be observed and the thickness of each layer estimated; 10% ammonium fluoride added tin dioxide electron transport layer (SnO) obtained in example 1 2 -NH 4 F) Traditional stannic oxide electron transport layer (SnO) obtained by comparison with comparative example 2 ) Atomic force microscopy tests were performed and the 3D AFM results are shown in FIG. 2, snO 2 -NH 4 The roughness of F film is lower, only 1.7nm, while SnO 2 The roughness of the film reaches 3.2nm. NH (NH) 4 Addition of F reduces SnO 2 The surface roughness of the film improves the contact problem between the electron transport layer and the perovskite interface.
Further, snO obtained in example 1 2 -NH 4 F electron transport layer and SnO obtained by comparative example 2 The electron transport layer is subjected to an X-ray photoelectron spectroscopy test, sn 3d, O1 s and F1s XPS spectra are respectively analyzed, and the Sn 3d orbital characteristic peak is shifted to a high binding energy position as shown in FIG. 3, so that the SnO is proved 2 The electron transport layer and F atoms have interaction, and F substitutes partial hydroxyl oxygen to passivate SnO 2 Surface defects of the electron transport layer.
Further, for the results obtained in example 1SnO of 2 -NH 4 F electron transport layer perovskite solar cell and SnO obtained in comparative example 2 The perovskite solar cell has the photoelectric conversion efficiency of devices, and the cell area is 0.04cm 2 And the test condition is standard simulated sunlight AM 1.5 under the air condition of 25 ℃.
The optimal reverse sweep of short circuit current-open circuit voltage is shown in FIG. 4, relative to a conventional SnO 2 Perovskite solar cells, snO 2 -NH 4 The efficiency of the F battery device is improved to 22.12% from 19.87%, and more obviously, the open-circuit voltage is greatly improved, and the average open-circuit voltage is improved by 70mV. This reduces energy losses mainly due to the reduction of interface defects and the increase in charge extraction efficiency.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. The perovskite solar cell containing the ammonium fluoride modified stannic oxide electron transport layer is characterized by sequentially comprising a stannic oxide electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode from bottom to top, wherein the stannic oxide electron transport layer is modified by ammonium fluoride.
2. The perovskite solar cell comprising the ammonium fluoride-modified tin dioxide electron transport layer as claimed in claim 1, wherein the ammonium fluoride modification reduces roughness of the tin dioxide thin film surface and increases conductivity of the tin dioxide transport layer; and fluorine atoms replace part of hydroxyl oxygen of the tin dioxide, so that the defects of the interface of the tin dioxide and the perovskite are passivated.
3. The perovskite solar cell comprising an ammonium fluoride modified tin dioxide electron transport layer as claimed in claim 1, wherein the tin dioxide electron transport layer has a thickness of 30 to 100nm.
4. The perovskite solar cell comprising the ammonium fluoride-modified tin dioxide electron transport layer of any one of claims 1 to 3, wherein the perovskite light absorption layer is MAPbI 3 、FAPbI 3 、CsPbI 3 、(FAPbI 3 ) 0.87 (MAPbBr 3 ) 0.13 、Cs 0.05 (MA 0.17 FA 0.83 ) 0.95 Pb(I 0.83 Br 0.17 ) Or FA 0.83 Cs 0.17 PbI 3 (ii) a The hole transport layer is 2,2,7,7-tetra [ N, N-di (4-methoxyphenyl) amino]-9,9-spirobifluorene or poly [ bis (4-phenyl) (2,4,6-trimethylphenyl) amine](ii) a The metal electrode is gold, silver or copper.
5. The method for preparing the perovskite solar cell with the ammonium fluoride modified tin dioxide electron transport layer as claimed in any one of claims 1 to 4, wherein the method comprises the following steps:
(1) Adding ammonium fluoride into the tin dioxide dispersion liquid, and fully and uniformly mixing to obtain a precursor;
(2) Spin-coating the precursor obtained in the step (1) on a substrate, and annealing to obtain an electron transport layer;
(3) And (3) sequentially preparing a perovskite light absorption layer, a hole transport layer and a metal electrode on the electron transport layer obtained in the step (2), and obtaining the perovskite solar cell containing the ammonium fluoride modified stannic oxide electron transport layer.
6. The method for preparing the perovskite solar cell with the ammonium fluoride modified tin dioxide electron transport layer according to claim 5, wherein the mass of the ammonium fluoride is 1% -40% of that of the tin dioxide.
7. The method for preparing the perovskite solar cell with the ammonium fluoride modified tin dioxide electron transport layer according to claim 5, wherein in the step (2), the annealing temperature is 100-180 ℃ and the annealing time is 20-40 min.
8. The method for preparing the perovskite solar cell with the ammonium fluoride modified tin dioxide electron transport layer as claimed in claim 5, wherein in the step (2), the spin coating speed is 3000-5000 rpm, and the spin coating acceleration is 1000-2000 rpm/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211018859.6A CN115360300A (en) | 2022-08-24 | 2022-08-24 | Perovskite solar cell containing ammonium fluoride modified stannic oxide electron transport layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211018859.6A CN115360300A (en) | 2022-08-24 | 2022-08-24 | Perovskite solar cell containing ammonium fluoride modified stannic oxide electron transport layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115360300A true CN115360300A (en) | 2022-11-18 |
Family
ID=84004491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211018859.6A Pending CN115360300A (en) | 2022-08-24 | 2022-08-24 | Perovskite solar cell containing ammonium fluoride modified stannic oxide electron transport layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115360300A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115884611A (en) * | 2023-02-23 | 2023-03-31 | 北京科技大学 | CsPbI 3 Perovskite solar cell and preparation method thereof |
-
2022
- 2022-08-24 CN CN202211018859.6A patent/CN115360300A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115884611A (en) * | 2023-02-23 | 2023-03-31 | 北京科技大学 | CsPbI 3 Perovskite solar cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113193124B (en) | Perovskite solar cell modified by triethylamine hydrochloride and preparation method thereof | |
| CN113659079B (en) | Trans-planar structure quasi-two-dimensional perovskite solar cell and preparation method thereof | |
| CN113363390A (en) | High-efficiency perovskite solar cell and preparation method | |
| CN112133831B (en) | Preparation method and application of photovoltaic device based on tin dioxide transmission layer | |
| CN113193123B (en) | Double-interface-layer-modified efficient perovskite solar cell and preparation method thereof | |
| CN111785787A (en) | Perovskite solar cell without electron transport layer and hole transport layer and manufacturing method | |
| CN111261783B (en) | Novel electron transport layer perovskite solar cell and preparation method thereof | |
| CN115241386A (en) | Perovskite solar cell and preparation method thereof | |
| CN115360300A (en) | Perovskite solar cell containing ammonium fluoride modified stannic oxide electron transport layer | |
| CN109859950A (en) | Biologic solar cell and preparation method thereof with three layers of chlorophyll structure | |
| CN109830604A (en) | A kind of perovskite photovoltaic cell and preparation method thereof with polyethylene oxide thin film passivation electron transfer layer and photosensitive interface layer | |
| CN116156979A (en) | Photovoltaic device based on FTO conductive substrate and preparation method thereof | |
| CN114864822A (en) | Perovskite solar cell and preparation method thereof | |
| CN113421970A (en) | Perovskite solar cell with HCl modified tin dioxide as electron transport layer and preparation method thereof | |
| CN220476238U (en) | Surface passivation perovskite solar cell | |
| CN116963511A (en) | Perovskite solar cell modified by phenylphosphoric acid and preparation method thereof | |
| CN114784195B (en) | Perovskite thin-film solar cell and preparation method thereof | |
| CN113161492B (en) | Preparation method based on micromolecular passivation perovskite solar cell | |
| CN118102828B (en) | Preparation method of organic electronic transmission layer and perovskite solar cell | |
| CN111430484B (en) | Inorganic inverted perovskite solar cell, and preparation method and application thereof | |
| CN112978788B (en) | Preparation method of tin dioxide sol, tin dioxide planar structure perovskite photovoltaic cell without annealing effect and preparation method | |
| CN110165060B (en) | Preparation method of hole-free hole transport layer | |
| CN110504366B (en) | Vanadium-copper composite oxide film, preparation method and application thereof, and organic solar cell | |
| CN109244240B (en) | CsGeI3Doped organic solar cell and preparation method thereof | |
| CN109216553B (en) | CsSnI3Doped organic solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |