CN103137466A - Method for removing silicon nitride in manufacturing process of deep trench device - Google Patents
Method for removing silicon nitride in manufacturing process of deep trench device Download PDFInfo
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- CN103137466A CN103137466A CN2011103770921A CN201110377092A CN103137466A CN 103137466 A CN103137466 A CN 103137466A CN 2011103770921 A CN2011103770921 A CN 2011103770921A CN 201110377092 A CN201110377092 A CN 201110377092A CN 103137466 A CN103137466 A CN 103137466A
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- silicon nitride
- deep trench
- silicon chip
- phosphoric acid
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Abstract
The invention discloses a method for removing silicon nitride in the manufacturing process of a deep trench device. The method includes steps of using deionized water to pre-treat a silicon chip in an over flow (OF) mode; and immersing the silicon chip into a phosphoric acid tank for the etching treatment so as to remove the silicon nitride completely. According to the method, before the silicon chip is immersed into the phosphoric acid tank, a pretreatment step is added, the deionized water in the pretreatment step can remove bubbles formed at the bottom of the deep trench completely, therefore interference of the bubbles to reaction of silicon nitride with water in the follow-up etching treatment can be avoided, finally the silicon nitride on the surface of the silicon chip can be removed completely, the residue problem of the silicon nitride can be solved, and the yield of products can be improved.
Description
Technical field
The present invention relates to a kind of removal method of silicon nitride, particularly relate to the removal method of silicon nitride in a kind of deep trench device manufacturing processes.
Background technology
Deep trench (Deep Trench) all can be used in a lot of semiconductor device, such as super junction (Super Junction, SJ), dynamic random access memory (Dynamic Random Access Memory, DRAM), silicon through hole (Through Silicon Via, TSV), etc.Have in deep trench manufacturing process and remove silicon nitride (Si
3N
4) step.
In the deep trench device manufacturing processes, silicon nitride can be formed at the extra-regional described silicon chip surface of described deep trench, and perhaps described silicon nitride is formed on the surface of the extra-regional described silicon chip surface of described deep trench and described deep trench.The described silicon nitride of removing, in existing deep trench device manufacturing processes, the removal method of silicon nitride is, the described silicon chip that directly will be formed with described silicon nitride is immersed in phosphoric acid groove, under the catalytic action of phosphoric acid, water in described phosphoric acid groove (H2O) and described silicon nitride reaction are also removed described silicon nitride, and the reaction time is generally 65 minutes.After removing described silicon nitride, also need again silicon chip is adopted to clear soon the mode of washing (quick dump rinse, QDR) and with deionized water, silicon chip is cleaned, again that described silicon chip is dry at last.
But silicon nitride residue appears in device cell (Cell) zone that existing method can be on silicon chip and scribe line (Scriber Line) zone.As illustrated in fig. 1 and 2, be respectively scanning electron microscopy (Scanning Electron Microscopy, SEM) figure and defective (defect) distribution map that existing method is removed silicon chip after silicon nitride.Can find out, existing method can not remove fully silicon chip surface silicon nitride, have the residual of silicon nitride, can form a lot of defectives at last.Adopt light microscope (Optical Microscopy, OM) to observe and to see the residual of silicon nitride too.
Have now in the removal method of silicon nitride in the deep trench device manufacturing processes, after silicon chip is immersed in phosphoric acid groove, because the liquid in phosphoric acid groove is that phosphoric acid has toughness, bubble bottom deep trench can't be discharged fully, cause in course of reaction, bubble is easy to disturb the reaction of silicon nitride and water, thereby silicon nitride can't be removed within the time that limits fully, causes to form the silicon nitride residue problem.
Summary of the invention
Technical problem to be solved by this invention is to provide the removal method of silicon nitride in a kind of deep trench device manufacturing processes, can remove silicon nitride, solution silicon nitride residue problem in the deep trench device manufacturing processes fully, thereby can improve product yield.
For solving the problems of the technologies described above, the invention provides the removal method of silicon nitride in a kind of deep trench device manufacturing processes, be formed with the deep trench of deep trench device on silicon chip, silicon nitride is formed at the extra-regional described silicon chip surface of described deep trench, and perhaps described silicon nitride is formed on the surface of the extra-regional described silicon chip surface of described deep trench and described deep trench; Adopt following steps to remove described silicon nitride:
(Over Flow, OF) mode is cleaned in step 1, employing overflow, with deionized water, the described silicon chip that is formed with described silicon nitride is carried out preliminary treatment, and described deionized water is got rid of the bubble in described deep trench fully.
After step 2, preliminary treatment, described silicon chip is immersed in carries out etching processing in phosphoric acid groove, under the catalytic action of phosphoric acid, the water in described phosphoric acid groove and described silicon nitride reaction are also removed described silicon nitride fully.
Further improving is that described in step 1, the pretreated time was greater than 200 seconds.
Further improve and be, the degree of depth of described deep trench is greater than 1 micron, better being chosen as greater than 10 microns.
The inventive method is by before in being immersed in phosphoric acid groove with silicon chip, increase a pretreated step, deionized water in pre-treatment step can all be got rid of the bubble that is formed at the deep trench bottom of deep trench device, thereby can avoid bubble to disturb the reaction of silicon nitride and water in follow-up etching processing, silicon nitride, solution silicon nitride residue problem in the deep trench device manufacturing processes can be removed at last fully, thereby product yield can be improved.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 is the SEM figure of silicon chip after existing method removal silicon nitride;
Fig. 2 is the defect map of silicon chip after existing method removal silicon nitride;
Fig. 3 is the flow chart of embodiment of the present invention method;
Fig. 4 is the SEM figure of silicon chip after embodiment of the present invention method removal silicon nitride;
Fig. 5 is the defect map of silicon chip after embodiment of the present invention method removal silicon nitride.
Embodiment
As shown in Figure 3, be the flow chart of embodiment of the present invention method; Be formed with on silicon chip deep trench device such as super-junction device, the degree of depth is about the deep trench of 35 microns, silicon nitride is formed at the extra-regional described silicon chip surface of described deep trench, under particular case, silicon nitride also can be formed in described deep trench, and in the embodiment of the present invention, silicon nitride only is formed at the extra-regional described silicon chip surface of described deep trench; In embodiment of the present invention deep trench device manufacturing processes, the removal method of silicon nitride adopts following steps to remove described silicon nitride:
Step 1, employing OF mode are carried out preliminary treatment with deionized water to the described silicon chip that is formed with described silicon nitride, and the described pretreated time is 650 seconds, and described deionized water is got rid of the bubble in described deep trench fully.
After step 2, preliminary treatment, described silicon chip is immersed in carries out etching processing in phosphoric acid groove, the time of etching processing is 65 minutes, and under the catalytic action of phosphoric acid, the water in described phosphoric acid groove and described silicon nitride reaction are also removed described silicon nitride fully.
Adopt hot deionized water to clear soon to silicon chip more afterwards and wash (Hot DI Quick Dump Rinse, HQDR) mode is cleaned silicon chip with deionized water, scavenging period is 650 seconds, again described silicon chip is finally cleaned (Final Rinse successively at last, FR) technique and rotation dry (Spin Dryer, SD), the process time of FR technique and SD technique is all 300 seconds.
Deionized water in the pre-treatment step of embodiment of the present invention method can all be got rid of the bubble that is formed at the deep trench bottom of deep trench device, thereby can avoid bubble to disturb the reaction of silicon nitride and water in follow-up etching processing, silicon nitride, solution silicon nitride residue problem in the deep trench device manufacturing processes can be removed at last fully, thereby product yield can be improved.As shown in Fig. 4 to 5, be respectively SEM figure and defect map that embodiment of the present invention method is removed silicon chip after silicon nitride.Can find out, embodiment of the present invention method can be removed in super junction the silicon nitride with deep trench fully, eliminates the residual of silicon nitride, can form less defective at last, has greatly improved the yield of product.
Abovely by specific embodiment, the present invention is had been described in detail, but these are not to be construed as limiting the invention.In the situation that do not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (4)
1. the removal method of silicon nitride in a deep trench device manufacturing processes, be formed with the deep trench of deep trench device on silicon chip, silicon nitride is formed at the extra-regional described silicon chip surface of described deep trench, and perhaps described silicon nitride is formed on the surface of the extra-regional described silicon chip surface of described deep trench and described deep trench; It is characterized in that, adopt following steps to remove described silicon nitride:
Step 1, employing overflow cleaning way carry out preliminary treatment with deionized water to the described silicon chip that is formed with described silicon nitride, and described deionized water is got rid of the bubble in described deep trench fully;
After step 2, preliminary treatment, described silicon chip is immersed in carries out etching processing in phosphoric acid groove, under the catalytic action of phosphoric acid, the water in described phosphoric acid groove and described silicon nitride reaction are also removed described silicon nitride fully.
2. the removal method of silicon nitride in the deep trench device manufacturing processes as claimed in claim 1, it is characterized in that: described in step 1, the pretreated time was greater than 200 seconds.
3. the removal method of silicon nitride in the deep trench device manufacturing processes as claimed in claim 1, it is characterized in that: the degree of depth of described deep trench is greater than 1 micron.
4. the removal method of silicon nitride in the deep trench device manufacturing processes as claimed in claim 3, it is characterized in that: the degree of depth of described deep trench is greater than 10 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110377092.1A CN103137466B (en) | 2011-11-23 | 2011-11-23 | The minimizing technology of silicon nitride in deep groove device manufacture process |
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| CN201110377092.1A CN103137466B (en) | 2011-11-23 | 2011-11-23 | The minimizing technology of silicon nitride in deep groove device manufacture process |
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| CN103137466A true CN103137466A (en) | 2013-06-05 |
| CN103137466B CN103137466B (en) | 2016-04-13 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030068867A1 (en) * | 2001-09-04 | 2003-04-10 | Matthias Forster | Method for fabricating a trench capacitor for a semiconductor memory |
| CN1549311A (en) * | 2003-05-12 | 2004-11-24 | 旺宏电子股份有限公司 | Equipment and method for etching silicon nitride thin film |
| CN101465273A (en) * | 2007-12-18 | 2009-06-24 | 中芯国际集成电路制造(上海)有限公司 | Wet-type etching method for reducing wafer surface blemish and device thereof |
| CN102085518A (en) * | 2009-12-03 | 2011-06-08 | 无锡华润上华半导体有限公司 | Method for cleaning wafer and method for removing silicon nitride layer and silicon oxynitride layer |
| CN102110590A (en) * | 2010-06-26 | 2011-06-29 | 天水天光半导体有限责任公司 | Method for using deionized water as wetting agent in oxide corrosion of semiconductor device |
-
2011
- 2011-11-23 CN CN201110377092.1A patent/CN103137466B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030068867A1 (en) * | 2001-09-04 | 2003-04-10 | Matthias Forster | Method for fabricating a trench capacitor for a semiconductor memory |
| CN1549311A (en) * | 2003-05-12 | 2004-11-24 | 旺宏电子股份有限公司 | Equipment and method for etching silicon nitride thin film |
| CN101465273A (en) * | 2007-12-18 | 2009-06-24 | 中芯国际集成电路制造(上海)有限公司 | Wet-type etching method for reducing wafer surface blemish and device thereof |
| CN102085518A (en) * | 2009-12-03 | 2011-06-08 | 无锡华润上华半导体有限公司 | Method for cleaning wafer and method for removing silicon nitride layer and silicon oxynitride layer |
| CN102110590A (en) * | 2010-06-26 | 2011-06-29 | 天水天光半导体有限责任公司 | Method for using deionized water as wetting agent in oxide corrosion of semiconductor device |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140115 |
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Effective date of registration: 20140115 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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