CN103094656A - SIW bridge - Google Patents
SIW bridge Download PDFInfo
- Publication number
- CN103094656A CN103094656A CN2012105907092A CN201210590709A CN103094656A CN 103094656 A CN103094656 A CN 103094656A CN 2012105907092 A CN2012105907092 A CN 2012105907092A CN 201210590709 A CN201210590709 A CN 201210590709A CN 103094656 A CN103094656 A CN 103094656A
- Authority
- CN
- China
- Prior art keywords
- port
- upper wall
- lower wall
- wall
- symmetry axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000002955 isolation Methods 0.000 claims abstract description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000003780 insertion Methods 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract description 3
- 238000012545 processing Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Waveguides (AREA)
Abstract
SIW bridge relates to microwave device. The invention is composed of a medium substrate and metal through holes on the medium substrate, and comprises a first port, a second port and a third port, wherein an isolation belt is used as the lower wall of the second port and the upper wall of the third port, the upper wall of the first port and the upper wall of the second port are connected by a first bevel edge, the lower wall of the first port and the lower wall of the third port are connected by a second bevel edge, the three ports are axisymmetric, the isolation belt is positioned on a symmetry axis, the included angle between the first bevel edge 51 and the symmetry axis is 45 degrees, the included angle between the second bevel edge and the symmetry axis is 45 degrees, each wall of each port is formed by arranging metal through holes, and the upper wall of the first port, the lower wall of the first port, the upper wall of the second port and the lower wall of the third port are. The bridge of the invention has high isolation performance in a microwave frequency band (40 GHz-56 GHz), low insertion loss and port standing waves.
Description
Technical field
The present invention relates to microwave device.
Background technology
Along with the high speed development of modern microwave millimetre-wave circuit system, its function becomes increasingly complex, electrical performance indexes is more and more higher, and its volume is more and more less simultaneously, weight is more and more lighter; Whole system is rapidly to miniaturization, lightweight, high reliability, multifunctionality and low-cost future development.The microwave and millimeter wave technology of low cost, high-performance, high finished product rate is very crucial for the business-like low-cost microwave and millimeter wave broadband system of exploitation.Therefore, in the urgent need to developing new microwave and millimeter wave integrated technology.Substrate integration wave-guide (SubstrateIntegrated Waveguide, slW) technology is that proposed in recent years a kind of can be integrated in and have the new guided wave structure formed of the characteristics such as filter with low insertion loss, low radiation, high power capacity in dielectric substrate, it can realize passive and active integrated effectively, make the miniaturization of microwave and millimeter wave system, even can be produced on whole microwave and millimeter wave system in an encapsulation; And its propagation characteristic and the rectangular metal waveguide similar, even submillimeter wave parts and subsystem have high Q value, high power capacity, easily and the advantages such as other planar circuit and integrated chip so by its microwave and millimeter wave that consists of, the plated-through hole array that is entirely on dielectric substrate due to total simultaneously consists of, so this structure can be utilized common PCB technique, LTCC technique, even thin film circuit technique accurately realizes.Compare with the processing cost of traditional waveguide form microwave and millimeter wave device, the processing cost of substrate integration wave-guide microwave and millimeter wave device is very cheap, does not need anything post debugging work, is fit to very much Integrated design and in enormous quantities making of microwave and millimeter wave circuit.SIW takes into account the advantage of conventional waveguide and microstrip transmission line, can realize high performance microwave millimeter-wave planar circuit.
Summary of the invention
Technical problem to be solved by this invention is, provide a kind of volume little, be easy to integrated SIW-3dB electric bridge.
the technical scheme that the present invention solve the technical problem employing is, the SIW electric bridge, it is characterized in that, consisted of by the metal throuth hole on medium substrate and medium substrate, comprise the first port, the second port and the 3rd port, the isolation strip is as the lower wall of the second port and the upper wall of the 3rd port, the first port upper wall is connected by the first hypotenuse with the second port upper wall, the first port lower wall is connected by the second hypotenuse with the 3rd port lower wall, three ports are axial symmetry, the isolation strip is on symmetry axis, the first hypotenuse 51 is 45 ° with the symmetry axis angle, the second hypotenuse and symmetry axis angle are 45 °, each wall of each port is all arranged by metal throuth hole and is consisted of, the first port upper wall, the first port lower wall, the second port upper wall and the 3rd port lower wall are parallel to symmetry axis.
Further, dielectric substrate thickness is 0.254mm, and electric bridge length is 12mm, and each port width is 4mm, and the metal aperture radius of arranging formation the first port upper wall and lower wall, the second port upper wall, the 3rd port lower wall is 0.15mm, is spaced apart 0.5mm; The radius that consists of the metal aperture of isolation strip is 0.1mm, is spaced apart 0.4mm.
The invention has the beneficial effects as follows, overcome existing power splitter and be difficult for processing, volume deficiency very much not easy of integration, can be widely used in microwave﹠millimeter-wave IC, it is a kind of novel integrated guided wave structure formed device of high Q value, low-loss, and can facilitate the integrated of the planar transmission lines such as realization and microstrip line, co-planar waveguide, and be easy to design and processing.Electric bridge of the present invention has microwave band (high isolation performance, low insertion loss and port standing wave in 40GHz~56GHz).
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the test curve figure of frequency 42GHz~54GHz, and visible S11 minimum is isolated into :-15dB.
Fig. 3 is frequency 42GHz~54GHz, and visible maximum allocated loss is: 3.31.
Fig. 4 is at frequency 42GHz~54GHz, and visible maximum standing wave is: 2.58.
Embodiment
Referring to Fig. 1~4.SIW electric bridge of the present invention, consisted of by the metal throuth hole on medium substrate and medium substrate, comprise the first port A1, the second port A2 and the 3rd port A3, isolation strip A4 is as the lower wall of the second port A2 and the upper wall of the 3rd port A3, the first port upper wall A11 is connected by the first hypotenuse A51 with the second port upper wall A21, the first port lower wall A12 is connected by the second hypotenuse A52 with the 3rd port lower wall A22, three ports are axial symmetry, isolation strip A4 is on symmetry axis, the first hypotenuse A51 and symmetry axis angle are 45 °, the angle of the second hypotenuse A52 and symmetry axis is 45 °, each wall of each port is all arranged by metal throuth hole and is consisted of, the first port upper wall, the first port lower wall, the second port upper wall and the 3rd port lower wall are parallel to symmetry axis.
Dielectric substrate thickness is 0.254mm, and electric bridge length is 12mm, and each port width is 4mm, and the metal aperture radius of arranging formation the first port upper wall and lower wall, the second port upper wall, the 3rd port lower wall is 0.15mm, is spaced apart 0.5mm; The upper wall of the first port, lower wall length are 4mm(0.5 * 8), the lower wall length of the upper wall of the second port and the 3rd port is 6.5mm(0.5 * 13).The radius that consists of the metal aperture of isolation strip is 0.1mm, is spaced apart 0.4mm, and isolation strip length is 5.2mm(0.4 * 13).Two hypotenuse length are 2mm(0.5 * 4).The spacing of above metal aperture be all distance of center circle from.
Claims (2)
1.SIW electric bridge, it is characterized in that, consisted of by the metal throuth hole on medium substrate and medium substrate, comprise the first port [A1], the second port [A2] and the 3rd port [A3], isolation strip [A4] is as the lower wall of the second port [A2] and the upper wall of the 3rd port [A3], the first port upper wall [A11] is connected by the first hypotenuse [A51] with the second port upper wall [A21], the first port lower wall [A12] is connected by the second hypotenuse [A52] with the 3rd port lower wall [A22], three ports are axial symmetry, [A4] is on symmetry axis in the isolation strip, the first hypotenuse [A51] is 45 ° with the symmetry axis angle, the second hypotenuse [A52] is 45 ° with the symmetry axis angle, each wall of each port is all arranged by metal throuth hole and is consisted of, the first port upper wall, the first port lower wall, the second port upper wall and the 3rd port lower wall are parallel to symmetry axis.
2. SIW electric bridge as claimed in claim 1, is characterized in that, dielectric substrate thickness is 0.254mm, and electric bridge length is 12mm, and each port width is 4mm,
The metal aperture radius of arranging formation the first port upper wall and lower wall, the second port upper wall, the 3rd port lower wall is 0.15mm, is spaced apart 0.5mm;
The radius that consists of the metal aperture of isolation strip is 0.1mm, is spaced apart 0.4mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012105907092A CN103094656A (en) | 2012-09-13 | 2012-12-31 | SIW bridge |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210337903.X | 2012-09-13 | ||
CN201210337903 | 2012-09-13 | ||
CN2012105907092A CN103094656A (en) | 2012-09-13 | 2012-12-31 | SIW bridge |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103094656A true CN103094656A (en) | 2013-05-08 |
Family
ID=48206969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012105907092A Pending CN103094656A (en) | 2012-09-13 | 2012-12-31 | SIW bridge |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103094656A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105680137A (en) * | 2014-11-20 | 2016-06-15 | 中国航空工业集团公司雷华电子技术研究所 | Substrate integrated waveguide based hybrid-structure miniaturized multi-layered power distributor |
CN106953153A (en) * | 2017-04-13 | 2017-07-14 | 南京邮电大学 | The integrated non-radiative chevron shaped power splitter of Medium Wave Guide of substrate |
CN106953152A (en) * | 2017-04-13 | 2017-07-14 | 南京邮电大学 | The stepped power splitter of the integrated non-radiative Medium Wave Guide of substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1949590A (en) * | 2006-10-27 | 2007-04-18 | 东南大学 | Substrate integrated waveguide comb-shaped power distributor |
US20090066597A1 (en) * | 2007-09-07 | 2009-03-12 | Songnan Yang | Substrate Integrated Waveguide Antenna Array |
-
2012
- 2012-12-31 CN CN2012105907092A patent/CN103094656A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1949590A (en) * | 2006-10-27 | 2007-04-18 | 东南大学 | Substrate integrated waveguide comb-shaped power distributor |
US20090066597A1 (en) * | 2007-09-07 | 2009-03-12 | Songnan Yang | Substrate Integrated Waveguide Antenna Array |
Non-Patent Citations (2)
Title |
---|
WU LI NAN,ZHANG XU CHUN: "A New Substrate Integrated Waveguide Six-port Circuit", 《MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT), 2010 INTERNATIONAL CONFERENCE ON 》 * |
X ZOU,C M TONG,D W YU: "Y-junction power divider based on substrate integrated waveguide", 《ELECTRONICS LETTERS》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105680137A (en) * | 2014-11-20 | 2016-06-15 | 中国航空工业集团公司雷华电子技术研究所 | Substrate integrated waveguide based hybrid-structure miniaturized multi-layered power distributor |
CN106953153A (en) * | 2017-04-13 | 2017-07-14 | 南京邮电大学 | The integrated non-radiative chevron shaped power splitter of Medium Wave Guide of substrate |
CN106953152A (en) * | 2017-04-13 | 2017-07-14 | 南京邮电大学 | The stepped power splitter of the integrated non-radiative Medium Wave Guide of substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103441340B (en) | Variable and half-module substrate integrated waveguide leaky-wave antenna frequency scanning polarizes | |
CN102800906B (en) | Multilayer ceramic substrate integrated waveguide filter | |
CN104092028A (en) | Balance feed differential slot antenna for restraining common-mode noise | |
CN103390784B (en) | Miniaturized substrate integration waveguide duplexer | |
CN104091990A (en) | Multiple-substrate integrated waveguide filtering power divider | |
CN104466317A (en) | Gallium arsenide dual-mode band-pass filter and manufacturing method thereof | |
Deng et al. | A compact planar bandpass filter with wide out‐of‐band rejection implemented by substrate‐integrated waveguide and complementary split‐ring resonator | |
CN102856617A (en) | Broadband substrate integrated waveguide circulator | |
KR101812490B1 (en) | Designs and methods to implement surface mounting structures of SIW | |
CN105977598A (en) | Coupling wire power divider capable of higher harmonic inhibition and broadband bandpass filtering | |
CN105990630A (en) | High-selectivity Balun band pass filter based on substrate integrated waveguide | |
CN105789802A (en) | Ultra-wideband Balun based on new interconnection structure | |
CN103094656A (en) | SIW bridge | |
CN203339280U (en) | Miniaturized substrate integrated waveguide duplexer | |
CN106856260B (en) | Miniaturized broadband dual-polarized antenna feed network | |
CN205355223U (en) | Piece formula stromatolite directional coupler | |
CN204391233U (en) | A kind of ultra wide band balun based on novel interconnect architecture | |
CN104577353A (en) | X-band substrate integrated waveguide four-element array antenna | |
CN203674352U (en) | Broadband difference band pass filter based on cross-shaped resonator | |
CN110911789B (en) | Substrate integrated waveguide band-pass filter | |
CN202259650U (en) | Highly miniaturized substrate integrated waveguide resonator | |
Zou et al. | Design of an X-band symmetrical window bandpass filter based on substrate integrated waveguide | |
Liu et al. | A substrate integrated waveguide to substrate integrated coaxial line transition | |
CN103337678B (en) | There is the cross-couplings substrate integral wave guide filter of steep side band characteristic | |
CN113113753B (en) | Directional coupler based on through silicon via technology |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130508 |