CN103094656A

CN103094656A - Substrate integrated waveguide (SIW) bridge

Info

Publication number: CN103094656A
Application number: CN2012105907092A
Authority: CN
Inventors: 汪晓光; 郭田田; 陈良; 邓龙江; 谢建良; 梁迪飞
Original assignee: University of Electronic Science and Technology of China
Current assignee: University of Electronic Science and Technology of China
Priority date: 2012-09-13
Filing date: 2012-12-31
Publication date: 2013-05-08

Abstract

The invention provides a substrate integrated waveguide (SIW) bridge and relates to microwave devices. The SIW bridge is composed of a dielectric substrate and metal through holes in the dielectric substrate. The SIW bridge comprises a first port, a second port and a third port, wherein an isolation band serves as the lower wall of the second port and the upper wall of the third port, the upper wall of the first port is connected with the upper wall of the second port through a first inclined edge, the lower wall of the first port is connected with the lower wall of the third port through a second inclined edge, the three ports are in axial symmetry, the isolation band is arranged on the symmetric axial, an included angle of the first inclined edge 51 and the symmetric axis is 45 degrees, the included angle of the second inclined edge and the symmetric axis is 45 degrees, walls of the ports are formed through distribution of the metal through holes, and the upper wall of the first port, the lower wall of the first port, the upper wall of the second port and the lower wall of the third port are parallel to the symmetric axis. The bridge has high isolation property in a microwave band between 40GHz and 56GHz, and is low in insertion loss and port standing wave.

Description

The SIW electric bridge

Technical field

The present invention relates to microwave device.

Background technology

Along with the high speed development of modern microwave millimetre-wave circuit system, its function becomes increasingly complex, electrical performance indexes is more and more higher, and its volume is more and more less simultaneously, weight is more and more lighter; Whole system is rapidly to miniaturization, lightweight, high reliability, multifunctionality and low-cost future development.The microwave and millimeter wave technology of low cost, high-performance, high finished product rate is very crucial for the business-like low-cost microwave and millimeter wave broadband system of exploitation.Therefore, in the urgent need to developing new microwave and millimeter wave integrated technology.Substrate integration wave-guide (SubstrateIntegrated Waveguide, slW) technology is that proposed in recent years a kind of can be integrated in and have the new guided wave structure formed of the characteristics such as filter with low insertion loss, low radiation, high power capacity in dielectric substrate, it can realize passive and active integrated effectively, make the miniaturization of microwave and millimeter wave system, even can be produced on whole microwave and millimeter wave system in an encapsulation; And its propagation characteristic and the rectangular metal waveguide similar, even submillimeter wave parts and subsystem have high Q value, high power capacity, easily and the advantages such as other planar circuit and integrated chip so by its microwave and millimeter wave that consists of, the plated-through hole array that is entirely on dielectric substrate due to total simultaneously consists of, so this structure can be utilized common PCB technique, LTCC technique, even thin film circuit technique accurately realizes.Compare with the processing cost of traditional waveguide form microwave and millimeter wave device, the processing cost of substrate integration wave-guide microwave and millimeter wave device is very cheap, does not need anything post debugging work, is fit to very much Integrated design and in enormous quantities making of microwave and millimeter wave circuit.SIW takes into account the advantage of conventional waveguide and microstrip transmission line, can realize high performance microwave millimeter-wave planar circuit.

Summary of the invention

Technical problem to be solved by this invention is, provide a kind of volume little, be easy to integrated SIW-3dB electric bridge.

the technical scheme that the present invention solve the technical problem employing is, the SIW electric bridge, it is characterized in that, consisted of by the metal throuth hole on medium substrate and medium substrate, comprise the first port, the second port and the 3rd port, the isolation strip is as the lower wall of the second port and the upper wall of the 3rd port, the first port upper wall is connected by the first hypotenuse with the second port upper wall, the first port lower wall is connected by the second hypotenuse with the 3rd port lower wall, three ports are axial symmetry, the isolation strip is on symmetry axis, the first hypotenuse 51 is 45 ° with the symmetry axis angle, the second hypotenuse and symmetry axis angle are 45 °, each wall of each port is all arranged by metal throuth hole and is consisted of, the first port upper wall, the first port lower wall, the second port upper wall and the 3rd port lower wall are parallel to symmetry axis.

Further, dielectric substrate thickness is 0.254mm, and electric bridge length is 12mm, and each port width is 4mm, and the metal aperture radius of arranging formation the first port upper wall and lower wall, the second port upper wall, the 3rd port lower wall is 0.15mm, is spaced apart 0.5mm; The radius that consists of the metal aperture of isolation strip is 0.1mm, is spaced apart 0.4mm.

The invention has the beneficial effects as follows, overcome existing power splitter and be difficult for processing, volume deficiency very much not easy of integration, can be widely used in microwave﹠millimeter-wave IC, it is a kind of novel integrated guided wave structure formed device of high Q value, low-loss, and can facilitate the integrated of the planar transmission lines such as realization and microstrip line, co-planar waveguide, and be easy to design and processing.Electric bridge of the present invention has microwave band (high isolation performance, low insertion loss and port standing wave in 40GHz～56GHz).

Description of drawings

Fig. 1 is structural representation of the present invention.

Fig. 2 is the test curve figure of frequency 42GHz～54GHz, and visible S11 minimum is isolated into :-15dB.

Fig. 3 is frequency 42GHz～54GHz, and visible maximum allocated loss is: 3.31.

Fig. 4 is at frequency 42GHz～54GHz, and visible maximum standing wave is: 2.58.

Embodiment

Referring to Fig. 1～4.SIW electric bridge of the present invention, consisted of by the metal throuth hole on medium substrate and medium substrate, comprise the first port A1, the second port A2 and the 3rd port A3, isolation strip A4 is as the lower wall of the second port A2 and the upper wall of the 3rd port A3, the first port upper wall A11 is connected by the first hypotenuse A51 with the second port upper wall A21, the first port lower wall A12 is connected by the second hypotenuse A52 with the 3rd port lower wall A22, three ports are axial symmetry, isolation strip A4 is on symmetry axis, the first hypotenuse A51 and symmetry axis angle are 45 °, the angle of the second hypotenuse A52 and symmetry axis is 45 °, each wall of each port is all arranged by metal throuth hole and is consisted of, the first port upper wall, the first port lower wall, the second port upper wall and the 3rd port lower wall are parallel to symmetry axis.

Dielectric substrate thickness is 0.254mm, and electric bridge length is 12mm, and each port width is 4mm, and the metal aperture radius of arranging formation the first port upper wall and lower wall, the second port upper wall, the 3rd port lower wall is 0.15mm, is spaced apart 0.5mm; The upper wall of the first port, lower wall length are 4mm(0.5 * 8), the lower wall length of the upper wall of the second port and the 3rd port is 6.5mm(0.5 * 13).The radius that consists of the metal aperture of isolation strip is 0.1mm, is spaced apart 0.4mm, and isolation strip length is 5.2mm(0.4 * 13).Two hypotenuse length are 2mm(0.5 * 4).The spacing of above metal aperture be all distance of center circle from.

Claims

1.SIW electric bridge, it is characterized in that, consisted of by the metal throuth hole on medium substrate and medium substrate, comprise the first port [A1], the second port [A2] and the 3rd port [A3], isolation strip [A4] is as the lower wall of the second port [A2] and the upper wall of the 3rd port [A3], the first port upper wall [A11] is connected by the first hypotenuse [A51] with the second port upper wall [A21], the first port lower wall [A12] is connected by the second hypotenuse [A52] with the 3rd port lower wall [A22], three ports are axial symmetry, [A4] is on symmetry axis in the isolation strip, the first hypotenuse [A51] is 45 ° with the symmetry axis angle, the second hypotenuse [A52] is 45 ° with the symmetry axis angle, each wall of each port is all arranged by metal throuth hole and is consisted of, the first port upper wall, the first port lower wall, the second port upper wall and the 3rd port lower wall are parallel to symmetry axis.

2. SIW electric bridge as claimed in claim 1, is characterized in that, dielectric substrate thickness is 0.254mm, and electric bridge length is 12mm, and each port width is 4mm,

The metal aperture radius of arranging formation the first port upper wall and lower wall, the second port upper wall, the 3rd port lower wall is 0.15mm, is spaced apart 0.5mm;

The radius that consists of the metal aperture of isolation strip is 0.1mm, is spaced apart 0.4mm.