CN103094126B - 陶瓷元器件细微立体导电线路的制备方法 - Google Patents
陶瓷元器件细微立体导电线路的制备方法 Download PDFInfo
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- CN103094126B CN103094126B CN201310015315.9A CN201310015315A CN103094126B CN 103094126 B CN103094126 B CN 103094126B CN 201310015315 A CN201310015315 A CN 201310015315A CN 103094126 B CN103094126 B CN 103094126B
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- ceramic components
- copper
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- 239000000919 ceramic Substances 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000007747 plating Methods 0.000 claims abstract description 25
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 239000010949 copper Substances 0.000 claims abstract description 24
- 239000010936 titanium Substances 0.000 claims abstract description 22
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000003486 chemical etching Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 230000003228 microsomal effect Effects 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 238000010099 solid forming Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 238000011109 contamination Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 7
- 238000004377 microelectronic Methods 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000009713 electroplating Methods 0.000 abstract description 2
- 238000006263 metalation reaction Methods 0.000 abstract description 2
- 230000008719 thickening Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 43
- 238000000034 method Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 150000003608 titanium Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002815 nickel Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- Manufacturing Of Printed Wiring (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
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CN201310015315.9A CN103094126B (zh) | 2013-01-16 | 2013-01-16 | 陶瓷元器件细微立体导电线路的制备方法 |
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CN201310015315.9A CN103094126B (zh) | 2013-01-16 | 2013-01-16 | 陶瓷元器件细微立体导电线路的制备方法 |
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CN103094126A CN103094126A (zh) | 2013-05-08 |
CN103094126B true CN103094126B (zh) | 2016-06-22 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104185365B (zh) | 2013-05-23 | 2018-06-26 | 比亚迪股份有限公司 | 一种线路板及其制备方法 |
CN104439724B (zh) * | 2014-11-10 | 2016-06-29 | 北京大学东莞光电研究院 | 一种在陶瓷基板上利用激光加工导电通道的方法 |
CN108323020A (zh) * | 2018-02-02 | 2018-07-24 | 廊坊市高瓷新材料科技有限公司 | 陶瓷铝基板的生产方法 |
CN113133195A (zh) * | 2020-01-16 | 2021-07-16 | 武汉光谷创元电子有限公司 | 三维电路的制作方法和电子元件 |
CN112725749A (zh) * | 2020-11-30 | 2021-04-30 | 惠州市芯瓷半导体有限公司 | 一种增加陶瓷孔内壁附着力的方法 |
CN113299626B (zh) * | 2021-06-29 | 2022-10-18 | 广东佛智芯微电子技术研究有限公司 | 一种多芯片封装用的导电组件及其制作方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102709439A (zh) * | 2012-05-08 | 2012-10-03 | 东莞市凯昶德电子科技股份有限公司 | Led陶瓷支架及其制备方法 |
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WO1998041070A1 (de) * | 1997-03-11 | 1998-09-17 | Siemens S.A. | Verfahren zur bildung metallischer leitermuster auf elektrisch isolierenden unterlagen |
US6388230B1 (en) * | 1999-10-13 | 2002-05-14 | Morton International, Inc. | Laser imaging of thin layer electronic circuitry material |
JP4367457B2 (ja) * | 2006-07-06 | 2009-11-18 | パナソニック電工株式会社 | 銀膜、銀膜の製造方法、led実装用基板、及びled実装用基板の製造方法 |
CN102223764A (zh) * | 2010-04-16 | 2011-10-19 | 富葵精密组件(深圳)有限公司 | 软性电路板的制作方法 |
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CN102709439A (zh) * | 2012-05-08 | 2012-10-03 | 东莞市凯昶德电子科技股份有限公司 | Led陶瓷支架及其制备方法 |
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Effective date of registration: 20180424 Address after: 523000 No. 12, ancient Liao Road, Tangxia Town, Dongguan, Guangdong Patentee after: DONGGUAN CHINA ADVANCED CERAMIC TECHNOLOGY Co.,Ltd. Address before: 523000, No. two, No. 2, Lao Lao Road, Tangxia Town, Guangdong, Dongguan Patentee before: DONGGUAN KECHENDA ELECTRONIC TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20200916 Address after: 710000 unit 1707, building 1, Wanke hi tech living Plaza, No.56 Xifeng Road, Yanta District, Xi'an, Shaanxi Province Patentee after: Xi'an Boxin Chuangda Electronic Technology Co.,Ltd. Address before: 523000 No. 12, ancient Liao Road, Tangxia Town, Dongguan, Guangdong Patentee before: DONGGUAN CHINA ADVANCED CERAMIC TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20240514 Address after: 321000 No. 828 Jinshi Road, Jiangdong Town, Jindong District, Jinhua City, Zhejiang Province (self declared) Patentee after: Jinhua Xinci Technology Co.,Ltd. Country or region after: China Address before: Unit 1707, unit 1, building 1, Vanke hi tech living Plaza, 56 Xifeng Road, Yanta District, Xi'an City, Shaanxi Province, 710000 Patentee before: Xi'an Boxin Chuangda Electronic Technology Co.,Ltd. Country or region before: China |