CN103081016A - 存储元件的驱动方法及使用存储元件的存储装置 - Google Patents

存储元件的驱动方法及使用存储元件的存储装置 Download PDF

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Publication number
CN103081016A
CN103081016A CN2011800413598A CN201180041359A CN103081016A CN 103081016 A CN103081016 A CN 103081016A CN 2011800413598 A CN2011800413598 A CN 2011800413598A CN 201180041359 A CN201180041359 A CN 201180041359A CN 103081016 A CN103081016 A CN 103081016A
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CN
China
Prior art keywords
electrode
resistance state
memory element
low resistance
nanogap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800413598A
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English (en)
Chinese (zh)
Inventor
高桥刚
增田雄一郎
古田成生
角谷透
小野雅敏
林豊
福冈敏美
清水哲夫
库玛拉古卢巴兰·索姆
菅洋志
内藤泰久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Funai Electric Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Funai Electric Advanced Applied Technology Research Institute Inc
Original Assignee
Funai Electric Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Funai Electric Advanced Applied Technology Research Institute Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Funai Electric Co Ltd, National Institute of Advanced Industrial Science and Technology AIST, Funai Electric Advanced Applied Technology Research Institute Inc filed Critical Funai Electric Co Ltd
Publication of CN103081016A publication Critical patent/CN103081016A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/33—Material including silicon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Semiconductor Memories (AREA)
CN2011800413598A 2010-08-26 2011-08-25 存储元件的驱动方法及使用存储元件的存储装置 Pending CN103081016A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010189132A JP5527729B2 (ja) 2010-08-26 2010-08-26 メモリ素子の駆動方法及びメモリ素子を備える記憶装置
JP2010-189132 2010-08-26
PCT/JP2011/069113 WO2012026506A1 (ja) 2010-08-26 2011-08-25 メモリ素子の駆動方法及びメモリ素子を用いた記憶装置

Publications (1)

Publication Number Publication Date
CN103081016A true CN103081016A (zh) 2013-05-01

Family

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Family Applications (1)

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CN2011800413598A Pending CN103081016A (zh) 2010-08-26 2011-08-25 存储元件的驱动方法及使用存储元件的存储装置

Country Status (5)

Country Link
US (1) US9135990B2 (https=)
JP (1) JP5527729B2 (https=)
CN (1) CN103081016A (https=)
TW (1) TW201230036A (https=)
WO (1) WO2012026506A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI624837B (zh) * 2017-05-22 2018-05-21 旺宏電子股份有限公司 記憶體操作方法及記憶體操作裝置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080123393A1 (en) * 2005-06-20 2008-05-29 Fujitsu Limited Nonvolatile semiconductor memory device and method of writing into the same
CN101273461A (zh) * 2005-09-27 2008-09-24 独立行政法人产业技术综合研究所 开关元件
JP2009205709A (ja) * 2008-02-26 2009-09-10 Funai Electric Advanced Applied Technology Research Institute Inc ナノギャップ素子の駆動方法及びナノギャップ素子を備える記憶装置
US20100202185A1 (en) * 2007-09-10 2010-08-12 Yoshikazu Katoh Nonvolatile memory device and method of writing data to nonvolatile memory device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7423787B2 (en) * 2001-03-01 2008-09-09 Ricoh Company, Ltd. Optical scanning module, device, and method, and imaging apparatus
US7443710B2 (en) 2004-09-28 2008-10-28 Spansion, Llc Control of memory devices possessing variable resistance characteristics
WO2007074504A1 (ja) 2005-12-26 2007-07-05 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法
JP5312782B2 (ja) * 2007-12-20 2013-10-09 株式会社船井電機新応用技術研究所 ナノギャップスイッチング素子の駆動方法及びナノギャップスイッチング素子を備える記憶装置
JP4544340B2 (ja) * 2008-01-24 2010-09-15 ソニー株式会社 電子素子およびその製造方法並びに記憶装置
JP2010157568A (ja) 2008-12-26 2010-07-15 Funai Electric Advanced Applied Technology Research Institute Inc メモリセルアレイ
US8624217B2 (en) * 2010-06-25 2014-01-07 International Business Machines Corporation Planar phase-change memory cell with parallel electrical paths

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080123393A1 (en) * 2005-06-20 2008-05-29 Fujitsu Limited Nonvolatile semiconductor memory device and method of writing into the same
CN101273461A (zh) * 2005-09-27 2008-09-24 独立行政法人产业技术综合研究所 开关元件
US20100202185A1 (en) * 2007-09-10 2010-08-12 Yoshikazu Katoh Nonvolatile memory device and method of writing data to nonvolatile memory device
JP2009205709A (ja) * 2008-02-26 2009-09-10 Funai Electric Advanced Applied Technology Research Institute Inc ナノギャップ素子の駆動方法及びナノギャップ素子を備える記憶装置

Also Published As

Publication number Publication date
WO2012026506A1 (ja) 2012-03-01
JP5527729B2 (ja) 2014-06-25
TW201230036A (en) 2012-07-16
US20130155757A1 (en) 2013-06-20
US9135990B2 (en) 2015-09-15
JP2012048779A (ja) 2012-03-08

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Application publication date: 20130501