CN103066111A - 具有自对准沟道宽度的晶体管 - Google Patents
具有自对准沟道宽度的晶体管 Download PDFInfo
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- CN103066111A CN103066111A CN2012103991435A CN201210399143A CN103066111A CN 103066111 A CN103066111 A CN 103066111A CN 2012103991435 A CN2012103991435 A CN 2012103991435A CN 201210399143 A CN201210399143 A CN 201210399143A CN 103066111 A CN103066111 A CN 103066111A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/278,038 US8716768B2 (en) | 2011-10-20 | 2011-10-20 | Transistor with self-aligned channel width |
US13/278,038 | 2011-10-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103066111A true CN103066111A (zh) | 2013-04-24 |
CN103066111B CN103066111B (zh) | 2016-07-06 |
Family
ID=48108661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210399143.5A Active CN103066111B (zh) | 2011-10-20 | 2012-10-19 | 具有自对准沟道宽度的晶体管 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8716768B2 (zh) |
CN (1) | CN103066111B (zh) |
HK (1) | HK1182530A1 (zh) |
TW (1) | TWI482282B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104347684A (zh) * | 2013-07-26 | 2015-02-11 | 台湾积体电路制造股份有限公司 | 通过器件隔离结构隔离的半导体开关器件 |
CN105393096A (zh) * | 2013-06-07 | 2016-03-09 | 罗伯特·博世有限公司 | 具有可活动的栅极的场效应晶体管红外传感器 |
CN109524457A (zh) * | 2017-09-20 | 2019-03-26 | 联华电子股份有限公司 | 半导体装置 |
CN112242304A (zh) * | 2020-10-27 | 2021-01-19 | 上海华虹宏力半导体制造有限公司 | 半导体器件及其形成方法 |
CN116031284A (zh) * | 2023-02-09 | 2023-04-28 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8716768B2 (en) * | 2011-10-20 | 2014-05-06 | Omnivision Technologies, Inc. | Transistor with self-aligned channel width |
US9257463B2 (en) * | 2012-05-31 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned implantation process for forming junction isolation regions |
US9524902B2 (en) * | 2013-12-12 | 2016-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming integrated circuit with conductive line having line-ends |
US10692788B2 (en) | 2017-08-28 | 2020-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device to decrease flicker noise in conductor-insulator-semiconductor (CIS) devices |
US10658482B2 (en) | 2017-11-01 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plate design to decrease noise in semiconductor devices |
US10468490B2 (en) | 2017-11-09 | 2019-11-05 | Nanya Technology Corporation | Transistor device and semiconductor layout structure |
US10559661B2 (en) | 2017-12-01 | 2020-02-11 | Nanya Technology Corporation | Transistor device and semiconductor layout structure including asymmetrical channel region |
US10381351B2 (en) | 2017-12-26 | 2019-08-13 | Nanya Technology Corporation | Transistor structure and semiconductor layout structure |
US10903080B2 (en) | 2018-08-21 | 2021-01-26 | Nanya Technology Corporation | Transistor device and method for preparing the same |
CN109935636B (zh) * | 2019-03-11 | 2022-08-26 | 长江存储科技有限责任公司 | 晶体管及其形成方法、存储器 |
US10847428B2 (en) * | 2019-03-25 | 2020-11-24 | Istanbul Teknik Universitesi | CMOS compatible device based on four-terminal switching lattices |
US10714432B1 (en) | 2019-03-25 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Layout to reduce noise in semiconductor devices |
US10985254B2 (en) | 2019-06-28 | 2021-04-20 | Nanya Technology Corporation | Semiconductor device and method of manufacturing the same |
US11404460B2 (en) * | 2020-01-07 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical gate field effect transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1371132A (zh) * | 2001-02-13 | 2002-09-25 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN101997016A (zh) * | 2009-08-07 | 2011-03-30 | 美商豪威科技股份有限公司 | 具有含多个沟道子区域的传输栅极的图像传感器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4707947B2 (ja) * | 2003-11-14 | 2011-06-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8716768B2 (en) * | 2011-10-20 | 2014-05-06 | Omnivision Technologies, Inc. | Transistor with self-aligned channel width |
-
2011
- 2011-10-20 US US13/278,038 patent/US8716768B2/en active Active
-
2012
- 2012-10-19 TW TW101138772A patent/TWI482282B/zh active
- 2012-10-19 CN CN201210399143.5A patent/CN103066111B/zh active Active
-
2013
- 2013-08-22 HK HK13109840.8A patent/HK1182530A1/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1371132A (zh) * | 2001-02-13 | 2002-09-25 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN101997016A (zh) * | 2009-08-07 | 2011-03-30 | 美商豪威科技股份有限公司 | 具有含多个沟道子区域的传输栅极的图像传感器 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105393096A (zh) * | 2013-06-07 | 2016-03-09 | 罗伯特·博世有限公司 | 具有可活动的栅极的场效应晶体管红外传感器 |
CN105393096B (zh) * | 2013-06-07 | 2017-07-18 | 罗伯特·博世有限公司 | 具有可活动的栅极的场效应晶体管红外传感器 |
US10910420B2 (en) | 2013-07-26 | 2021-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor switching device separate by device isolation |
US9704910B2 (en) | 2013-07-26 | 2017-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor switching device separated by device isolation |
CN104347684B (zh) * | 2013-07-26 | 2018-06-22 | 台湾积体电路制造股份有限公司 | 通过器件隔离结构隔离的半导体开关器件 |
US10141358B2 (en) | 2013-07-26 | 2018-11-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor switching device separated by device isolation |
CN104347684A (zh) * | 2013-07-26 | 2015-02-11 | 台湾积体电路制造股份有限公司 | 通过器件隔离结构隔离的半导体开关器件 |
US10468441B2 (en) | 2013-07-26 | 2019-11-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor switching device separated by device isolation |
US10734423B2 (en) | 2013-07-26 | 2020-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor switching device separated by device isolation |
CN109524457A (zh) * | 2017-09-20 | 2019-03-26 | 联华电子股份有限公司 | 半导体装置 |
CN109524457B (zh) * | 2017-09-20 | 2021-11-02 | 联华电子股份有限公司 | 半导体装置 |
CN112242304A (zh) * | 2020-10-27 | 2021-01-19 | 上海华虹宏力半导体制造有限公司 | 半导体器件及其形成方法 |
CN116031284A (zh) * | 2023-02-09 | 2023-04-28 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US8716768B2 (en) | 2014-05-06 |
HK1182530A1 (zh) | 2013-11-29 |
TWI482282B (zh) | 2015-04-21 |
TW201324780A (zh) | 2013-06-16 |
US20130099296A1 (en) | 2013-04-25 |
CN103066111B (zh) | 2016-07-06 |
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