CN103046135B - A kind of Double-heater structure of big-size sapphire furnace - Google Patents
A kind of Double-heater structure of big-size sapphire furnace Download PDFInfo
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Abstract
The invention discloses a kind of Double-heater structure of big-size sapphire furnace, comprise side heater and bottom heater; Wherein side heater adopt two to extend axially through copper ring that insulating part is fastenedly connected is as electrode, be respectively the first copper electrode and the second copper electrode, these two copper electrodes are circumferentially provided with multiple U-shaped tungsten bar respectively and form tubular structure as heating element, and U-shaped tungsten bar is fixed by rotational symmetry arrangement mode respectively on the first copper electrode and the second copper electrode; Bottom heater adopts duplex tungsten filament to need to build concentric heating ring according to thermal field, and duplex tungsten filament is connected on battery lead plate by duplex connecting screw, and bottom is supported by U-shaped support tungsten bar.Double-heater structure of big-size sapphire furnace provided by the present invention can create favourable thermal field condition for the growth of large gauge size sapphire crystal, effectively reduces the production cost of sapphire furnace simultaneously.
Description
Technical field
The present invention relates to sapphire crystal growth equipment technical field, particularly a kind of Double-heater structure of big-size sapphire furnace.
Background technology
At present, the application of Sapphire Substrate enterprise and LED extension manufacturer all with 2 inches and 4 inches for main substrate, along with the application of LED is more and more extensive, domestic and international extension manufacturer introduces 4 inches and 6 inches of expitaxial growth technologies and equipment gradually, 4 inches, 6 inches sapphire substrate will promote the significantly reduction of cost, to the demand of large-size sapphire substrate also by rapid temperature increases, thus promote that the blue large gauge size sapphire crystal growing furnace market requirement is increased sharply.
In the process of growth of crystal, need certain axial gradient and radial gradient.And traditional raw stove of sapphire bubble can only meet the growth of small dimension size sapphire crystal, and crystal diameter is once more than after 300mm, required thermograde only has been difficult to form reliable and desirable thermograde by single well heater, cause the yield of crystal and quality preservation low.
Existing embodiment one: as shown in Figure 1, adopts single birdcage well heater 01, without bottom heater; Employing single power supply is powered, and adopts 2 semicircle copper rings, and the two ends of the U-shaped tungsten bar of many groups are separately fixed on 2 semicircle copper rings, and the semicircular ring that useful tungsten bar is made in addition is fixed in the middle of U-shaped tungsten bar, constructs birdcage tungsten bar heating arrangement.
The raw stove of existing sapphire bubble all have employed birdcage tungsten bar well heater, but there is following shortcoming: warm field structure is after well heater and heat protection screen are installed, axis and the radial symmetry gradient of temperature field are all shaped, after being exactly installation, the means of the controllable adjustment of thermal field are less, make the brilliant difficulty of the length of the sapphire furnace of this thermal field of employing large;
Existing embodiment two: side heater adopts 2 segmentation heating, and bottom is independent heating arrangement.Side heater is made up of side heater Semi separation 02 structure in two Fig. 2, all adopts tungsten silk screen structure; Bottom surface well heater also adopts tungsten silk screen structure.
Adopt 2 sections, side tungsten silk screen+bottom tungsten silk screen heating, energy is control temperature gradient preferably, but it is uneven to there is bottom radial symmetry gradient, manufactures the problem of processing charges costliness.
Therefore, for above-mentioned situation, how to improve the structure of sapphire furnace, for large gauge size sapphire crystal growth creates favourable thermal field condition, and reduce the production cost of sapphire furnace, become the important technological problems that those skilled in the art are urgently to be resolved hurrily.
Summary of the invention
In view of this, the invention provides a kind of Double-heater structure of big-size sapphire furnace, to construct the temperature field that there is certain radial gradient a kind of side, and be equipped with bottom heater, form the sapphire furnace of unique double-heater structure, for large gauge size sapphire crystal growth creates reliable and excellent warm field structure, and effectively reduce the production cost of sapphire furnace.
For achieving the above object, the invention provides following technical scheme:
A kind of Double-heater structure of big-size sapphire furnace, comprising:
Side heater, adopt two to extend axially through copper ring that insulating part is fastenedly connected is as electrode, be respectively the first copper electrode and the second copper electrode, these two copper electrodes are circumferentially provided with multiple U-shaped tungsten bar respectively and form tubular structure as heating element, and described U-shaped tungsten bar is fixed by rotational symmetry arrangement mode respectively on described first copper electrode and described second copper electrode;
Bottom heater, adopt duplex tungsten filament to need to build concentric heating ring according to thermal field, described duplex tungsten filament is connected on battery lead plate by duplex connecting screw, and bottom is supported by U-shaped support tungsten bar.
Preferably, the described U-shaped tungsten bar interphase distribution on two described copper electrodes is circumferentially same.
Preferably, two described copper electrodes offer respectively the open holes for installing described U-shaped tungsten bar, and the position relative with the open holes on described second copper electrode offers groove, for passing through for the described U-shaped tungsten bar be arranged on described second copper electrode on the inwall being positioned at described first copper electrode of below.
Preferably, two described copper electrodes are connected by multiple bolted, pad and are provided with insulating mat, and be provided with collets between two described copper electrodes between each described bolt and described copper electrode.
Preferably, the top of each described U-shaped tungsten bar is fixed on the open holes of described copper electrode, and circular tungsten ring is all inserted in bottom, and is bundled by thin tungsten filament.
Preferably, the part that described U-shaped support tungsten bar is positioned at lower insulation molybdenum shield is arranged with U-shaped support tungsten bar insulation covering.
Preferably, insulated ring is inserted in the bottom of described U-shaped support tungsten bar, is fixed on bottom support retaining plate.
Preferably, described side heater and described bottom heater are connected to different circuit, the power of described side heater and described bottom heater can be adjusted, to meet the different requirements of crystal different stage to thermal field in the different steps of crystal pro cessing.
As can be seen from above-mentioned technical scheme, Double-heater structure of big-size sapphire furnace provided by the invention includes side heater and bottom heater two portions, therefore this sapphire furnace can go out different thermal fields by realizing the power adjustment of side heater and bottom heater being combined into from sapphire required for the different long brilliant stages, the controllable combination of thermal field increases, thus creates favourable thermal field condition for large gauge sapphire crystal growth;
And as can be seen from technique scheme, adopt U-shaped tungsten bar as the component parts of heating element in side heater provided by the present invention, and U-shaped tungsten bar on two copper electrodes axisymmetricly form arrangement, thus make the thermograde full symmetric distribution of side heater in axis and radial direction, this is not only large gauge sapphire crystal growth and has createed uniform side thermograde, the processing cost of tungsten bar is also starkly lower than the production cost of tungsten silk screen simultaneously, thus this kind of side heater structure also effectively reduces the production cost of whole sapphire furnace,
Bottom heater adopts duplex tungsten filament to need to build concentric heating annulus according to thermal field, compared with adopting the bottom heater of tungsten silk screen structure at present, the bottom heater of this kind of form due to centered by symmetrical structure, thus make the radial symmetry gradient of bottom temp field more even, thus be more conducive to the growth of large gauge sapphire crystal.
As can be seen here, Double-heater structure of big-size sapphire furnace provided by the present invention can create favourable thermal field condition for the growth of large gauge size sapphire crystal, effectively reduces the production cost of sapphire furnace simultaneously.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of single birdcage well heater of the prior art;
Fig. 2 is the structural representation of side heater of the prior art;
The schematic diagram of the Double-heater structure of big-size sapphire furnace that Fig. 3 provides for the embodiment of the present invention;
The structural representation of the double copper ring side heater that Fig. 4 provides for the embodiment of the present invention;
The structural representation of the bottom heater that Fig. 5 provides for the embodiment of the present invention;
Fig. 6 is the vertical view of Fig. 5.
In figure 3,1 is side heater, and 2 is crucible, and 3 is bottom heater;
In the diagram, 11 is circular tungsten ring, and 12 is U-shaped tungsten bar, and 13 is collets, and 14 is the first copper electrode, and 15 is the second copper electrode, and 16 is insulating mat, and 17 is bolt;
In fig. 5 and fig., 31 is duplex tungsten filament, and 32 is U-shaped support tungsten bar, and 33 is lower insulation molybdenum shield, and 34 is battery lead plate, and 35 is insulated ring, and 36 is bottom support retaining plate, and 37 is U-shaped support tungsten bar insulation covering, and 38 is duplex connecting screw.
Embodiment
The invention discloses a kind of Double-heater structure of big-size sapphire furnace., construct the temperature field that there is certain radial gradient a kind of side, and be equipped with bottom heater, form unique double-heater structure, for large gauge size sapphire crystal growth creates reliable and excellent warm field structure.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Refer to Fig. 3, the schematic diagram of the Double-heater structure of big-size sapphire furnace that Fig. 3 provides for the embodiment of the present invention.
The Double-heater structure of big-size sapphire furnace that the embodiment of the present invention provides, comprise side heater 1 and bottom heater 3, wherein side heater 1 adopts double copper ring as electrode ring, with U-shaped tungsten bar 12 as heating element, and U-shaped tungsten bar 12 is arranged symmetrically with along two copper electrode rings, concrete, please refer to Fig. 4, the structural representation of the double copper ring side heater that Fig. 4 provides for the embodiment of the present invention, adopt two to extend axially through copper ring that insulating part is fixedly connected with is as electrode, be respectively the first copper electrode 14 and superposed second copper electrode 15 that are positioned at bottom, then on these two copper electrodes, multiple U-shaped tungsten bar 12 is circumferentially installed respectively and forms tubular structure as heating element, and in order to ensure the homogeneity of side thermograde, U-shaped tungsten bar 12 is fixed by rotational symmetry mode on the first copper electrode 14 and the second copper electrode 15, this symmetry axis is the axis of two copper electrodes,
The concrete structure of bottom heater 3 please refer to Fig. 5 and Fig. 6, the concentric heating ring that the top of bottom heater 3 for adopting duplex tungsten filament 31 is constructed by the needs of thermal field, and duplex tungsten filament 31 is connected on battery lead plate 34 by duplex connecting screw 38, to ensure the reliable contacts of battery lead plate 34 and duplex tungsten filament 31, bottom is supported by U-shaped support tungsten bar 32.
As shown in Figure 3, crucible 2 is in the inside of side heater 1, bottom heater 3 to be positioned under crucible 2 and to keep at a certain distance away, according to different steps in long brilliant process to the different requirements of thermal field, the power of side heater 1 and bottom heater 3 is adjusted, to meet the different requirements of crystal different stage to thermal field.
Because the Double-heater structure of big-size sapphire furnace in above-described embodiment includes side heater 1 and bottom heater 3 two portions, therefore this sapphire furnace can go out different thermal fields by realizing the power adjustment of side heater 1 and bottom heater 3 being combined into from sapphire required for the different long brilliant stages, the controllable combination of thermal field increases, thus creates favourable thermal field condition for large gauge sapphire crystal growth;
And as can be seen from above-described embodiment, adopt U-shaped tungsten bar 12 as the most basic component parts of heating element in side heater 1 provided by the present invention, and U-shaped tungsten bar 12 on two copper electrodes axisymmetricly form arrangement, thus make the thermograde full symmetric distribution of side heater 1 in axis and radial direction, this is not only large gauge sapphire crystal growth and has createed uniform side thermograde, the processing cost of tungsten bar is also starkly lower than the production cost of tungsten silk screen simultaneously, thus this kind of side heater structure also effectively reduces the production cost of whole sapphire furnace,
Bottom heater 3 adopts duplex tungsten filament 31 to need to build concentric heating annulus according to thermal field, compared with adopting the bottom heater of tungsten silk screen structure at present, the bottom heater of this kind of form due to centered by symmetrical structure, thus make the radial symmetry gradient of bottom temp field more even, thus be more conducive to the growth of large gauge sapphire crystal.
As can be seen here, the Double-heater structure of big-size sapphire furnace that the embodiment of the present invention provides can create favourable thermal field condition for the growth of large gauge size sapphire crystal, effectively reduces the production cost of sapphire furnace simultaneously.
In order to optimize the technical scheme in above-described embodiment further, the first copper electrode 14 in the present embodiment and the preferred interphase distribution of the U-shaped tungsten bar 12 on the second copper electrode 15 are circumferentially same, so-called interphase distribution refers to that, at same U-shaped tungsten bar 12 circumferentially, adjacent two U-shaped tungsten bars 12 are all arranged on different copper electrodes.
This kind of set-up mode can ensure the axis of the thermal field produced by side heater and the homogeneity of radial symmetry gradient further.
The conveniently installation of U-shaped tungsten bar 12, on the first copper electrode 14 and the second copper electrode 15, all open holes is provided with in the present embodiment, and position corresponding with the second copper electrode 15 open holes on the inwall of the first copper electrode 14 offers for for being arranged on the groove that the U-shaped tungsten bar on the second copper electrode passes through, and certainly can also offer the through hole that the U-shaped tungsten bar 12 of confession passes through in the position that the first copper electrode 14 is corresponding with the second copper electrode 15 open holes.
The first copper electrode 14 in the present embodiment and the second copper electrode 15 are fastenedly connected by bolt 17, because the first copper electrode 14 and the second copper electrode 15 are the different power transmission electrode be assigned to by uniform current on each U-shaped tungsten bar 12, therefore insulation must be ensured between the two, all pad between each bolt 17 and copper electrode in the present embodiment and be provided with insulating mat 16, and be also provided with the collets 13 be set on bolt 17 between two copper electrodes, to prevent from being communicated with between two electrodes.
In order to prevent U-shaped tungsten bar 12 at high temperature because the stress of gravity or its inside deforms, preferably the bottom of each U-shaped tungsten bar 12 is all inserted on same circular tungsten ring 11 in the present embodiment, and bundled by thin tungsten filament, to keep U-shaped tungsten bar 12 arrangement at high temperature.
In bottom heater, U-shaped support tungsten bar 32 is through lower insulation molybdenum shield 33, in order to ensure the insulation between U-shaped support tungsten bar 32 and lower insulation molybdenum shield 33, in the present embodiment, be positioned at the sheathed U-shaped support tungsten bar insulation covering 37 of the part of lower insulation molybdenum shield 33 at U-shaped support tungsten bar 32.
In order to ensure whole bottom heater 3 at high operating temperatures stable further, in the present embodiment, the bottom of U-shaped support stick 32 is all inserted in same insulated ring 35, and insulated ring 35 is fixed on bottom support retaining plate 36.
Side heater 1 and bottom heater 3 can be connected on identical power supply, but in order to the independent adjustment realizing side heater 1 and bottom heater 3 power needs to arrange respective Power Conditioning Unit respectively in side heater 1 and bottom heater 3, device fabrication cost can be caused so higher, in order to realize the independent adjustment of side heater 1 and bottom heater 3 with lower production cost, side heater 1 in the present embodiment and bottom heater 3 are connected to different circuit, namely be arranged on different power supplys, thus the power of side heater 1 and bottom heater 3 can be adjusted in the different steps of crystal pro cessing, to meet the different requirements of crystal different stage to thermal field.
In this specification sheets, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (8)
1. a Double-heater structure of big-size sapphire furnace, is characterized in that, comprising:
Side heater (1), adopt two to extend axially through copper ring that insulating part is fastenedly connected is as electrode, be respectively the first copper electrode (14) and the second copper electrode (15), these two copper electrodes are circumferentially provided with multiple U-shaped tungsten bar (12) respectively and form tubular structure as heating element, and described U-shaped tungsten bar (12) is fixed by rotational symmetry arrangement mode respectively on described first copper electrode (14) and described second copper electrode (15);
Bottom heater (3), adopt duplex tungsten filament (31) to need to build concentric heating ring according to thermal field, described duplex tungsten filament (31) is connected on battery lead plate (34) by duplex connecting screw (38), and bottom is supported by U-shaped support tungsten bar (32).
2. Double-heater structure of big-size sapphire furnace according to claim 1, is characterized in that, described U-shaped tungsten bar (12) interphase distribution on two described copper electrodes is circumferentially same.
3. Double-heater structure of big-size sapphire furnace according to claim 2, it is characterized in that, two described copper electrodes offer respectively the open holes for installing described U-shaped tungsten bar (12), and the position relative with the open holes on described second copper electrode (15) offers groove, for passing through for the described U-shaped tungsten bar (12) be arranged on described second copper electrode (15) on the inwall being positioned at described first copper electrode (14) of below.
4. Double-heater structure of big-size sapphire furnace according to claim 3, it is characterized in that, two described copper electrodes are fastenedly connected by multiple bolt (17), pad between each described bolt (17) and described copper electrode and be provided with insulating mat (16), and be provided with collets (13) between two described copper electrodes.
5. Double-heater structure of big-size sapphire furnace according to claim 4, it is characterized in that, the top of each described U-shaped tungsten bar (12) is fixed on the open holes of described copper electrode, and circular tungsten ring (11) is all inserted in bottom, and is bundled by thin tungsten filament.
6. Double-heater structure of big-size sapphire furnace according to claim 1, is characterized in that, the part that described U-shaped support tungsten bar (32) is positioned at lower insulation molybdenum shield (33) is arranged with U-shaped support tungsten bar insulation covering (37).
7. Double-heater structure of big-size sapphire furnace according to claim 6, is characterized in that, insulated ring (35) is inserted in the bottom of described U-shaped support tungsten bar (32), is fixed on bottom support retaining plate (36).
8. Double-heater structure of big-size sapphire furnace according to claim 1, it is characterized in that, described side heater (1) and described bottom heater (3) are connected to different circuit, the power of described side heater (1) and described bottom heater (3) can be adjusted, to meet the different requirements of crystal different stage to thermal field in the different steps of crystal pro cessing.
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| CN104775152B (en) * | 2015-03-16 | 2017-06-30 | 内蒙古京晶光电科技有限公司 | A kind of automatic growth control method of 80 150kg jewel monocrystalline |
| CN105113019B (en) * | 2015-09-29 | 2018-01-02 | 何康玉 | One kind heating tungsten bar heating electrode |
| CN106757319A (en) * | 2015-11-23 | 2017-05-31 | 中国科学院沈阳科学仪器股份有限公司 | Thermal field system is used in a kind of large-size crystals growth |
| CN105970291B (en) * | 2016-06-20 | 2018-03-16 | 大连晶达德光电技术有限公司 | A kind of 9 operated type sapphire single crystal growth furnace birdcage heaters |
| CN107268082A (en) * | 2017-07-27 | 2017-10-20 | 哈尔滨奥瑞德光电技术有限公司 | A kind of rectangle sapphire single-crystal calandria structure |
| CN108754615A (en) * | 2018-07-25 | 2018-11-06 | 哈尔滨奥瑞德光电技术有限公司 | A kind of single crystal growing furnace electrode structure |
| CN112279260A (en) * | 2020-10-30 | 2021-01-29 | 广东先导稀材股份有限公司 | Preparation facilities of high-purity boron crystal and high-purity boron powder |
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| CN102154699A (en) * | 2011-05-20 | 2011-08-17 | 吴晟 | Method for growing sapphire monocrystal and growth equipment |
| CN102534758A (en) * | 2012-01-20 | 2012-07-04 | 上海中电振华晶体技术有限公司 | Growth method and growth device for bar-shaped sapphire crystals |
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