CN202881385U - Wafer heating device - Google Patents
Wafer heating device Download PDFInfo
- Publication number
- CN202881385U CN202881385U CN 201220456713 CN201220456713U CN202881385U CN 202881385 U CN202881385 U CN 202881385U CN 201220456713 CN201220456713 CN 201220456713 CN 201220456713 U CN201220456713 U CN 201220456713U CN 202881385 U CN202881385 U CN 202881385U
- Authority
- CN
- China
- Prior art keywords
- reflector
- heating device
- wafer
- pedestal
- wafer heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model relates to a wafer heating device. The wafer heating device is characterized in that the wafer heating device is arranged below a bearing platform of air phase epitaxial wafer equipment so as to heat a wafer on the bearing platform, and the wafer heating device comprises a base, a heating body and a heat source reflection assembly; the heating body is arranged on the base and is positioned between the base and the bearing platform, and the heating body comprises a heating part which is separated from the base by an interval space and a connecting part connected between the heating part and the base; and the heat source reflection assembly is arranged in the interval space and comprises a first reflection plate which is positioned between the heating part and the base and has the thickness being 1 to 10 millimeters. Thereby, according to the wafer heating device provided by the utility model, the structure intensity is improved by increasing the thickness of the first reflection plate, deformation of the first reflection plate because of temperature variation can be reduced, and the service life of the wafer heating device is prolonged.
Description
Technical field
The utility model is for relating to a kind of semiconductor manufacturing equipment, espespecially a kind of heating unit that is applied to gas phase brilliant equipment of heap of stone.
Background technology
Metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, be called for short MOCVD), the crystal type of heap of stone that mainly adopts for photodiode manufacturer, one of the main reasons is that the metal organic chemical vapor deposition process speed is fast, approximately 4 to 5 hours, Yielding ability is good, and is fit to be applied to the high brightness LED product.
And when utilizing metal organic chemical vapor deposition board growth film, for current-carrying gas (Carrier Gas) being passed through the container in metal organic reaction source, the saturated vapo(u)r of reaction source brought in the reaction chamber mix with other reactant gases, and control the Heating temperature of substrate to be grown up by heating unit, at this growth that chemical reaction is facilitated film occurs above the substrate to be grown up then.
Become known for the heating unit of vapour deposition board, such as No. 303485 described well heater of TaiWan, China patent announcement, wafer holder below for the reaction chamber inside that is arranged at a vapor deposition device, this well heater is provided with a reflector, and this reflector is reflexed to this wafer holder with well heater thermal source down.
Yet this reflector of known well heater is because on its Thickness Design only approximately 0.5 millimeter, in the vapor deposition device, be in for a long time violent high low temperature variation lower, easily therefore produce deformation, and cause the deteriorated of reflecting effect, shorten the work-ing life of well heater, therefore the space that still is improved.
The utility model content
Main purpose of the present utility model is to solve known applications in the heating unit of vapour deposition board, has reflector and easily produces deformation, causes the problem that shortens work-ing life.
For reaching above-mentioned purpose, the utility model provides a kind of wafer heating device, be applied to a gas phase brilliant equipment of heap of stone, this gas phase brilliant equipment of heap of stone comprises the plummer that a reaction chamber, is positioned at this reaction chamber and carries a wafer, the below that this wafer heating device is arranged at this plummer is with to this wafer heating, and includes a pedestal, a heating member and a thermal source reflection subassembly.
This heating member is arranged on this pedestal and between this pedestal and this plummer, and this heating member comprise one and the be separated by heating part and of a clearance space of this pedestal be connected in connection section between this heating part and this pedestal; This thermal source reflection subassembly is arranged in this clearance space, and comprise one between this heating part and this pedestal and thickness between the first reflector of 1 to 10 millimeter.
Further, wafer heating device also comprises a fixation kit that is arranged in the clearance space, and fixation kit comprises retaining plate and an at least one mounting block that is connected with retaining plate and pedestal between the first reflector and pedestal.
Further, the thermal source reflection subassembly also comprises at least one positioning element that is connected with the first reflector and retaining plate.
Further, wafer heating device also comprises and a plurality ofly is arranged in the clearance space and passes the strut member that retaining plate is connected with pedestal, and strut member comprises a top against the heating part.
Further, the first reflector comprises a plurality of perforation that supply the top to pass.
Further, the first reflector comprises inner edge zone and an outer edge area, and positioning element comprises an outside fix part that is connected with outer edge area with the interior positioning element and of inner edge joint area.
Further, the thermal source reflection subassembly also comprise one be arranged between the first reflector and the pedestal and thickness between the second reflector of 0.3 to 0.7 millimeter, a be separated by spacing and be connected with positioning element of the second reflector and the first reflector.
Further, the thermal source reflection subassembly also comprises and a plurality ofly erectly is located on the first reflector and the reflector plate between heating part and the first reflector.
Thus, the utility model is between 1 to 10 millimeter by the Thickness Design with this first reflector, increase the structural strength of this first reflector, reduce this first reflector Yin Wendu and just change the deformation that produces, increase the work-ing life of this wafer heating device.
Description of drawings
Fig. 1 is the schematic diagram that the utility model one embodiment is arranged at gas phase brilliant equipment of heap of stone.
Fig. 2 A is the stereoscopic schematic diagram of the utility model one embodiment.
Fig. 2 B is the schematic side view of the utility model one embodiment.
Fig. 2 C be the utility model one embodiment on look schematic diagram.
Embodiment
Relevant detailed description of the present utility model and technology contents now just cooperate graphic being described as follows:
See also shown in Figure 1, be arranged at the schematic diagram of gas phase brilliant equipment of heap of stone for the utility model one embodiment, the utility model is a kind of wafer heating device 5, be applied to a gas phase brilliant equipment 1 of heap of stone, in this embodiment, this gas phase brilliant equipment 1 of heap of stone is a metal organic chemical vapor deposition board, but not as limit, this gas phase brilliant equipment 1 of heap of stone comprises a reaction chamber 2 and and is arranged at a plummer 3 in this reaction chamber 2, carrying one wafer 4 on this plummer 3,5 of this wafer heating devices are arranged at this plummer 3 belows, and this wafer 4 is carried out heating operation.
Please arrange in pairs or groups and consult shown in Fig. 2 A, Fig. 2 B and Fig. 2 C, Fig. 2 A is the stereoscopic schematic diagram of the utility model one embodiment, Fig. 2 B is the schematic side view of the utility model one embodiment, Fig. 2 C be the utility model one embodiment on look schematic diagram, this wafer heating device 5 includes a pedestal 10, and is arranged at heating member 20, on this pedestal 10 and is arranged at thermal source reflection subassembly 30 and between this pedestal 10 and this heating member 20 and is arranged at fixation kit 40 between this thermal source reflection subassembly 30 and this pedestal 10.
This pedestal 10 is an annular at this, be provided with this heating member 20 on it, the material of this heating member 20 is tungsten at this, but not as limit, also can be the alloy of molybdenum or molybdenum and tungsten, this heating member 20 comprises a heating part 21 and a junction 22, in this embodiment, this heating part 21 and this pedestal 10 clearance space 60 of being separated by, and form one shaft-like, to extending in parallel by pedestal 10, extend towards this pedestal 10 at the serve as reasons two ends of this heating part 21 of this connection section 22, and be connected and fixed with this pedestal 10, this connection section 22 also passes to an electric current, and the mode that this heating part 21 is generated heat with resistance-type heats this wafer 4.Still it should be noted that, this heating member 20 comprises one first heating member 23 and one second heating member 24 at this, but not as limit, also can further comprise one the 3rd heating member, one the 4th heating member etc.
This thermal source reflection subassembly 30 is arranged at this clearance space 60, and comprise one first reflector 31 and at least one positioning element 33, this first reflector 31 is between this heating part 21 and this pedestal 10, to should heating part 21 extending in parallel and be an arc lamellar body, in order to reflect the heat energy of these heating part 21 downward radiations, prevent the downward dissipation of heat energy, and, in order to strengthen the structural strength of this first reflector 31, its thickness is designed between 1 to 10 millimeter at this, be preferably between 2 to 5 millimeters, the material of this first reflector 31 then is molybdenum at this, but also can be the alloy of tungsten or tungsten and molybdenum; And this positioning element 33 is a plurality of at this, and it is connected between this first reflector 31 and this fixation kit 40, in order to fix the position of this first reflector 31, makes this first reflector 31 firm being positioned on this fixation kit 40.Further specify again, this first reflector 31 comprises inner edge zone 311 and one outer edge area 312,33 of this positioning elements comprise an interior positioning element 331 that is connected in this inner edge zone 311 and the outside fix part 332 that is connected in this outer edge area 312, so, positioning element 331 and this outside fix part 332 are connected and fixed this inner edge zone 311 and this outer edge area 312 of this first reflector 31 respectively in being somebody's turn to do with this fixation kit 40, increase the strength of joint of this first reflector 31.
In addition, this thermal source reflection subassembly 30 also can comprise one second reflector 32 and a reflector plate 34, this second reflector 32 is arranged between this first reflector 31 and this fixation kit 40, and with this first reflector 31 spacing of being separated by, be connected and fixed by this positioning element 33, the thickness of this second reflector 32 is between 0.3 to 0.7 millimeter, and this reflector plate 34 uprightly is located on this first reflector 31, between this heating part 21 and this first reflector 31, for being used for these 21 belows, heating part of reflection heat energy of lateral radiation outwardly, prevent heat energy dissipation outwardly.
This fixation kit 40 is arranged at this clearance space 60, comprise a retaining plate 41 and at least one mounting block 42, this retaining plate 41 is between this first reflector 31 and this pedestal 10, at this also between this second reflector 32 and this pedestal 10, these retaining plate 41 parallel these pedestals 10 also extend along this pedestal 10, connect for this positioning element 33, further firm this first reflector 31 and this second reflector 32, this retaining plate 41 itself then is fixed on this pedestal 10 by these mounting block 42 connections.
In the present embodiment, this wafer heating device 5 also can comprise a plurality of strut members 50, this strut member 50 is arranged at this clearance space 60, and stand on this pedestal 10 and be connected with this pedestal 10, and comprising a top 51, this strut member 50 passes this retaining plate 41, pass that this second reflector 32 and this first reflector 31 are had and each perforation 313 to should top 51 arranging by this top 51, support this heating part 21, support this heating part 21, anti-this heating part 21 offsets downward.
In sum, because the utility model is between 1 to 10 millimeter by the Thickness Design with this first reflector, increase the structural strength of this first reflector, and interior positioning element and this outside fix part are somebody's turn to do in setting, this inner edge zone and this outer edge area from this first reflector connects this first reflector respectively, firm this first reflector reduces accordingly this first reflector Yin Wendu and just changes the deformation that produces, and increases the work-ing life of this this wafer heating device.
Below the utility model is described in detail, yet the above person only is a preferred embodiment of the present utility model, when the scope that can not limit the utility model enforcement.Be that all equalizations of doing according to the utility model application range change and modify etc., all should still belong in the patent covering scope of the present utility model.
Claims (8)
1. wafer heating device, be applied to a gas phase brilliant equipment of heap of stone, described gas phase brilliant equipment of heap of stone comprises the plummer that a reaction chamber, is positioned at described reaction chamber and carries a wafer, described wafer heating device is arranged at the below of described plummer so that described wafer is heated, it is characterized in that, described wafer heating device includes:
One pedestal;
One is arranged on the described pedestal and the heating member between described pedestal and described plummer, described heating member comprise one and the be separated by heating part and of a clearance space of described pedestal be connected in connection section between described heating part and the described pedestal; And
One is arranged at the thermal source reflection subassembly in the described clearance space, described thermal source reflection subassembly comprise one between described heating part and described pedestal and thickness between the first reflector of 1 to 10 millimeter.
2. wafer heating device according to claim 1, it is characterized in that, described wafer heating device also comprises a fixation kit that is arranged in the described clearance space, and described fixation kit comprises retaining plate and an at least one mounting block that is connected described retaining plate and described pedestal between described the first reflector and described pedestal.
3. wafer heating device according to claim 2 is characterized in that, described thermal source reflection subassembly also comprises the positioning element of described the first reflector of at least one connection and described retaining plate.
4. wafer heating device according to claim 2, it is characterized in that, described wafer heating device also comprises and a plurality ofly is arranged in the described clearance space and passes the strut member that described retaining plate is connected with described pedestal, and described strut member comprises a top against described heating part.
5. wafer heating device according to claim 4 is characterized in that, described the first reflector comprises the perforation that the described top of a plurality of confessions is passed.
6. wafer heating device according to claim 3, it is characterized in that, described the first reflector comprises inner edge zone and an outer edge area, described positioning element comprise one with interior positioning element and an outside fix part that is connected with described outer edge area of described inner edge joint area.
7. wafer heating device according to claim 3, it is characterized in that, described thermal source reflection subassembly also comprise one be arranged between described the first reflector and the described pedestal and thickness between the second reflector of 0.3 to 0.7 millimeter, a be separated by spacing and be connected with described positioning element of described the second reflector and described the first reflector.
8. wafer heating device according to claim 1 is characterized in that, described thermal source reflection subassembly also comprises a plurality ofly erectly to be located on described the first reflector and the reflector plate between described heating part and described the first reflector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220456713 CN202881385U (en) | 2012-09-07 | 2012-09-07 | Wafer heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220456713 CN202881385U (en) | 2012-09-07 | 2012-09-07 | Wafer heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202881385U true CN202881385U (en) | 2013-04-17 |
Family
ID=48072831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220456713 Expired - Fee Related CN202881385U (en) | 2012-09-07 | 2012-09-07 | Wafer heating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202881385U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104674194A (en) * | 2013-11-26 | 2015-06-03 | 艾克斯特朗欧洲公司 | Supporting members and connecting members of heating mechanism for CVD reactor |
| CN104674195A (en) * | 2013-11-26 | 2015-06-03 | 艾克斯特朗欧洲公司 | Heating apparatus for CVD reactor base |
| CN108682635A (en) * | 2018-05-03 | 2018-10-19 | 沈阳拓荆科技有限公司 | Wafer block with heating mechanism and the reaction cavity comprising the wafer block |
| CN113430492A (en) * | 2021-08-26 | 2021-09-24 | 陛通半导体设备(苏州)有限公司 | PVD coating equipment |
-
2012
- 2012-09-07 CN CN 201220456713 patent/CN202881385U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104674194A (en) * | 2013-11-26 | 2015-06-03 | 艾克斯特朗欧洲公司 | Supporting members and connecting members of heating mechanism for CVD reactor |
| CN104674195A (en) * | 2013-11-26 | 2015-06-03 | 艾克斯特朗欧洲公司 | Heating apparatus for CVD reactor base |
| CN108682635A (en) * | 2018-05-03 | 2018-10-19 | 沈阳拓荆科技有限公司 | Wafer block with heating mechanism and the reaction cavity comprising the wafer block |
| CN113430492A (en) * | 2021-08-26 | 2021-09-24 | 陛通半导体设备(苏州)有限公司 | PVD coating equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202881385U (en) | Wafer heating device | |
| JP5639104B2 (en) | Deposition equipment | |
| CN202465868U (en) | Graphite disk and reaction chamber with same | |
| CN103572211A (en) | Physical vapor deposition equipment and physical vapor deposition process | |
| JP2011510499A (en) | Substrate support apparatus and substrate processing apparatus having the same | |
| US5648006A (en) | Heater for chemical vapor deposition equipment | |
| CN103046135B (en) | A kind of Double-heater structure of big-size sapphire furnace | |
| CN109841541B (en) | SiC epitaxial growth device | |
| US7082261B2 (en) | Heating stage | |
| CN108493126A (en) | Lamp cap printed circuit board with flexible support | |
| CN103074607A (en) | Graphite plate and reaction chamber with graphite plate | |
| CN103074611A (en) | Substrate bearing device and metal organic chemical vapor deposition device | |
| CN202116645U (en) | Multi-zone heating device of metal organic chemical vapor deposition device | |
| CN202116644U (en) | Heater of metal organic chemical vapor deposition equipment | |
| CN104246969B (en) | Base plate processing system equipped with the lamp cap with temperature management | |
| CN202626287U (en) | Graphite plate and reaction chamber with same | |
| KR101489366B1 (en) | Vacuum effusion cell | |
| CN102414515B (en) | Cooker | |
| CN217997404U (en) | Heating device for be used for carborundum seed crystal to bond | |
| CN103743239B (en) | Quartz clamping device and manufacturing method thereof and OLED high temperature furnace with quartz clamping device | |
| CN105552000A (en) | Depressurizing diffusion furnace and carrier plate bearing device | |
| CN203096168U (en) | Metal organic chemical vapor deposition (MOCVD) equipment | |
| US7573004B1 (en) | Filament support arrangement for substrate heating apparatus | |
| CN103794528B (en) | Semiconductor processing equipment | |
| CN216427478U (en) | Crucible supports balancing unit and long brilliant stove |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130417 Termination date: 20150907 |
|
| EXPY | Termination of patent right or utility model |