CN103042803B - The manufacture method of electronic installation - Google Patents
The manufacture method of electronic installation Download PDFInfo
- Publication number
- CN103042803B CN103042803B CN201210387361.7A CN201210387361A CN103042803B CN 103042803 B CN103042803 B CN 103042803B CN 201210387361 A CN201210387361 A CN 201210387361A CN 103042803 B CN103042803 B CN 103042803B
- Authority
- CN
- China
- Prior art keywords
- glass substrate
- fissility
- duplexer
- electronic installation
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 196
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
- 238000009434 installation Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 384
- 239000011521 glass Substances 0.000 claims abstract description 258
- 230000008569 process Effects 0.000 claims abstract description 94
- 239000011342 resin composition Substances 0.000 claims abstract description 83
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 40
- 238000003475 lamination Methods 0.000 claims abstract description 12
- 238000004381 surface treatment Methods 0.000 claims abstract description 10
- 238000000926 separation method Methods 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims description 139
- 239000011347 resin Substances 0.000 claims description 139
- 238000007711 solidification Methods 0.000 claims description 53
- 230000008023 solidification Effects 0.000 claims description 53
- 229920001296 polysiloxane Polymers 0.000 claims description 49
- -1 methyl silicane Chemical compound 0.000 claims description 37
- 229920002050 silicone resin Polymers 0.000 claims description 34
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- 239000000463 material Substances 0.000 claims description 20
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- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 238000006757 chemical reactions by type Methods 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 125000002769 thiazolinyl group Chemical group 0.000 claims description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 5
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- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 8
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 8
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- 239000003795 chemical substances by application Substances 0.000 description 7
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 7
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
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- 239000003921 oil Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 239000005297 pyrex Substances 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
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- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 1
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 238000007501 Fourcault process Methods 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
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- 229960003237 betaine Drugs 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
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- 238000003283 slot draw process Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
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- 229910000601 superalloy Inorganic materials 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005200 wet scrubbing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10128—Treatment of at least one glass sheet
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/041—Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Surface Treatment Of Glass (AREA)
- Joining Of Glass To Other Materials (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention relates to the manufacture method of electronic installation, it is the manufacture method of the electronic installation comprising fissility glass substrate and use for electronic equipment component, and it possesses: surface treatment procedure, cured resin composition layer formation process, lamination process, curing process, cut-out operation, component formation process and separation circuit.
Description
Technical field
The present invention relates to the manufacture method of electronic installation.
Background technology
In recent years, the devices (electronic equipment) such as solar cell (PV), liquid crystal panel (LCD), organic EL panel (OLED) are just in slimming, thereupon, lightweight, for the glass substrate of these devices also just at thin plate.If because thin plate causes the intensity of glass substrate not enough, then in the manufacturing process of device, the treatability of glass substrate reduces.
Therefore, all the time, on the glass substrate thicker than final thickness after forming apparatus component (such as thin film transistor (TFT)), be widely adopted by the method for chemical etching process by glass substrate thin plate.But, in the method, such as by the thickness of 1 glass substrate from 0.7mm thin plate to 0.2mm, 0.1mm, most removing with etching solution of the material of glass substrate originally, therefore not preferred from the viewpoint that productivity ratio, raw-material service efficiency are such.
In addition, in the thin plate method of the above-mentioned glass substrate based on chemical etching, when glass baseplate surface exists small scar, having because of etch processes is that starting point forms small pit (pit), becomes the situation of optic defect with scar.
Recently, in order to tackle the problems referred to above, propose following method: the duplexer preparing to be laminated with glass substrate and stiffener, the glass substrate of duplexer forms the use for electronic equipment components such as display unit, be then separated stiffener (such as with reference to patent document 1) from glass substrate.Stiffener has supporter and is fixed on the resin bed on this supporter, and resin bed and glass substrate are strippingly closely sealed.The resin bed of duplexer and the interface peel of glass substrate, the stiffener that is separated from glass substrate can be stacked with new glass substrate, recycle as duplexer.
prior art document
patent document
Patent document 1: International Publication No. 07/018028 pamphlet
Summary of the invention
the problem that invention will solve
On the one hand, in recent years, along with the requirement of the high performance of electronic installation, use for electronic equipment component further microminiaturization, the operation of enforcement is more multifarious.In this condition, the electronic installation of productivity ratio manufacturing property excellence well is also needed.
When the present inventor etc. use the duplexer described in patent document 1 to manufacture electronic installation, find that there is the situation of the poor performance of gained electronic installation.Such as, when making oled panel, have and produce the uneven situation of display in the drive area of this panel.
The result that the present inventor etc. study above-mentioned reason, find that the resin bed in the duplexer described in patent document 1 exists uneven thickness (especially having protuberance in circumference), this can damage the flatness of glass substrate, result, can reduce the manufacture output of electronic installation.
In (A) of Fig. 8, show the sectional view of the carrier substrate 28 of that use when making the duplexer described in patent document 1, that there is carrier substrate 14 and resin bed 18 tape tree lipid layer.Laminated glass substrate on the exposing surface of the resin bed 18 in the carrier substrate 28 of tape tree lipid layer, forms duplexer.As shown in (A) of Fig. 8, there is uneven thickness with the resin bed 18 that the method described in patent document 1 is formed.This uneven thickness is especially remarkable near the outer peripheral edge of resin bed 18, forms protuberance 80.On such resin bed 18 that there is uneven thickness during laminated glass substrate 82, the dented general bending of central portion of glass substrate 82, damages the flatness ((B) with reference to Fig. 8) of glass substrate 82.Owing to having damaged the flatness of glass substrate 82, the use for electronic equipment component be configured on glass substrate 82 has produced position skew etc., and result, has the worry that the performance causing electronic installation reduces.
In addition, as shown in (B) of Fig. 8, on the carrier substrate 28 of such tape tree lipid layer during laminated glass substrate 82, between glass substrate 82 and resin bed 18, form space 84.By the manufacturing process of duplexer for use for electronic equipment component, the exposing surface of glass substrate 82 forms the functional layers such as conductive layer.Now, the various solution such as anti-corrosion liquid are used.
When having space 84 in duplexer, various solution enters space due to capillarity.Even if the material entering into space 84 is also difficult to removing by washing, easy in impurities left after the drying.This impurity can become because of heating etc. the pollution sources polluting use for electronic equipment component, the performance of electronic installation thus can be caused to reduce, result, output is reduced.
The present invention carries out in view of the above problems, its object is to provide a kind of use the carrier substrate of the tape tree lipid layer of flatness excellence, the manufacture method of the electronic installation of productivity ratio excellence.
for the scheme of dealing with problems
The present inventor etc. conduct in-depth research to solve the problem, thus complete the present invention.
Namely, 1st embodiment of the present invention is a kind of manufacture method of electronic installation, it is the manufacture method of the electronic installation comprising fissility glass substrate and use for electronic equipment component, it possesses: surface treatment procedure, there is with remover process aforementioned 1st interarea of the glass substrate of the 1st interarea and the 2nd interarea, obtain the fissility glass substrate with the surface showing easy fissility; Cured resin composition layer formation process, the surface of the easy fissility of display of aforementioned fissility glass substrate is coated with hardening resin composition, forms uncured cured resin composition layer; Lamination process, to there is the carrier substrate of the appearance and size less than the appearance and size of aforementioned uncured cured resin composition layer, with reserve in aforementioned uncured cured resin composition layer not with the mode of the peripheral edge margin of aforementioned bearer substrate contacts, be layered in aforementioned uncured cured resin composition layer, obtain solidifying front duplexer; Curing process, makes the aforementioned uncured cured resin composition layer solidification in said curing front duplexer, obtains having duplexer after the solidification of resin bed; Cut off operation, along the outer peripheral edge of the aforementioned bearer substrate in said curing rear duplexer, cut off aforementioned resin layer and aforementioned fissility glass substrate; Component formation process, aforementioned 2nd interarea of aforementioned fissility glass substrate forms use for electronic equipment component, obtains the duplexer of electronic device component; And separation circuit, be separated the electronic installation with aforementioned fissility glass substrate and aforementioned electronic component from the duplexer of aforementioned strip use for electronic equipment component.
In the 1st embodiment, preferably after aforementioned lamination process and before said curing operation, also possesses the bubble removal step of the deaeration process carrying out aforementioned uncured cured resin composition layer.
In the 1st embodiment, preferred aforementioned remover contains the compound with methyl silicane base or fluoro-alkyl.
In the 1st embodiment, preferred aforementioned remover contains silicone oil or fluorine based compound.
In the 1st embodiment, preferred aforementioned resin layer contains silicone resin.
In the 1st embodiment, preferred aforementioned resin layer is by having the olefinic organic based polysiloxane of thiazolinyl and having the solidfied material with the addition reaction-type silicone be combined to form of the organic hydrogen polysiloxanes of the hydrogen atom of silicon atom bonding.
Preferred aforementioned organic hydrogen polysiloxanes be 0.5 ~ 2 with the mol ratio of the hydrogen atom of silicon atom bonding and the thiazolinyl of aforementioned olefinic organic based polysiloxane.
In the 1st embodiment, preferred aforementioned resin layer contains the organopolysiloxane of the non-curable of below 5 quality %.
In the 1st embodiment, preferably in aforementioned cut-out operation, support the interarea of the carrier substrate in said curing rear duplexer with microscope carrier, and make the periphery of aforementioned bearer substrate determine that block abuts with the position be arranged on aforementioned microscope carrier.
In the 1st embodiment, preferably in aforementioned cut-out operation, the surface of the fissility glass substrate in said curing rear duplexer forms line of cut, then along line of cut, the fissility glass substrate in said curing rear duplexer and resin bed peripheral part is separately together cut off.
the effect of invention
According to the present invention, can provide the carrier substrate of the tape tree lipid layer using flatness excellence, the manufacture method of the electronic installation of productivity ratio excellence.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacturing process of an embodiment of the manufacture method representing electronic installation of the present invention.
(A) ~ (G) of Fig. 2 is the schematic section of the embodiment representing the manufacture method of electronic installation of the present invention by process sequence.
(A) of Fig. 3 is the top view of duplexer before the solidification obtained in lamination process.(B) of Fig. 3 is for representing the partial section of the stacked front state of carrier substrate.(C) of Fig. 3 is the partial section of the state after representing stacked carrier substrate.
Fig. 4 is the plane making part perspective represent duplexer after the solidification be positioned on microscope carrier.
Fig. 5 makes a part destroy the sectional view representing duplexer and processing head after the solidification be positioned on microscope carrier.
Fig. 6 be represent be positioned on other microscope carrier solidification after duplexer and seize the sectional view of fixture on both sides by the arms.
Fig. 7 is the flow chart of the manufacturing process of other embodiments of the manufacture method representing electronic installation of the present invention.
(A) of Fig. 8 is the sectional view of the carrier substrate of the tape tree lipid layer based on prior art.(B) of Fig. 8 is the partial cross section figure of the end of the duplexer based on prior art.
description of reference numerals
10 fissility glass substrates
12 uncured cured resin composition layer
14 carrier substrates
Duplexer before 16 solidifications
18 resin beds
Duplexer after 20 solidifications
22 cut off rear duplexer
24 use for electronic equipment components
The duplexer of 26 electronic device components
The carrier substrate of 28 tape tree lipid layer
30 electronic installations
32 spaces
50,70 microscope carriers
Block is determined in 51 ~ 53 positions
54,55 movable blocks
60 processing heads
62 cutters
64 supports
66 lines of cut
68 cracks
72 seize fixture on both sides by the arms
80 protuberances
82 glass substrates
84 spaces
Detailed description of the invention
Below, be described with reference to accompanying drawing to for implementing embodiments of the present invention, the present invention, by the restriction of following embodiment, can impose various distortion and displacement to following embodiment not departing from the scope of the present invention.
What the problem points to the invention of patent document 1 such as the present inventor was studied found that, be subject to by coating hardening resin composition bring impact, Air Interface capillary impact, there will be concavo-convex at resin layer surface.
And finding, by making resin bed contact with the glass substrate showing the fissility specified with uncured state, giving flatness, then it is made to solidify, the duplexer of the resin bed possessing the flatness with regulation can be obtained, result, the performance of electronic installation can be suppressed to reduce.
Be described by the manufacture method of each process sequence to electronic installation below.
In addition, in the present invention, resin bed after solidification described later in duplexer is higher than the peel strength at the layer of glass substrate and the interface of resin bed with the peel strength at the interface of the layer of carrier substrate, and being fixed on hereinafter also referred to resin bed, carrier substrate, resin bed and glass substrate are strippingly closely sealed.
［ the 1st embodiment ］
Fig. 1 is the flow chart of the manufacturing process in an embodiment of the manufacture method representing electronic installation of the present invention.As shown in Figure 1, the manufacture method of electronic installation possesses surface treatment procedure S102, cured resin composition layer formation process S104, lamination process S106, curing process S108, cuts off operation S110, component formation process S112 and separation circuit S114.
In addition, Fig. 2 is the schematic section of each manufacturing process represented in order in the manufacture method of electronic installation of the present invention.
Below, with reference to Fig. 2, the material used in each operation and order thereof are described in detail.First, effects on surface treatment process S102 describes in detail.
［ surface treatment procedure ］
Surface treatment procedure S102 is the 1st interarea with remover process with the glass substrate of the 1st interarea and the 2nd interarea, obtains the operation of the fissility glass substrate with the surface showing easy fissility.By implementing this operation S102, (A) of the fissility glass substrate 10(strippingly closely sealed with aftermentioned resin bed with reference to Fig. 2 can be obtained).At this, fissility glass substrate 10 refers to the glass substrate with surperficial 10a resin bed described later being shown to easy fissility.In addition, the easy fissility that the surface of fissility glass substrate has refers to when being applied for the external force peeled off by fissility glass substrate duplexer after solidification described later, the character of the interface of carrier substrate and resin bed and inner can not the stripping of resin bed and interface peel at fissility glass substrate and resin bed.
First, the glass substrate used and remover are described in detail, thereafter the order of this operation S102 is described in detail in this operation.
(glass substrate)
Glass substrate is the plate-like substrate with the 1st interarea and the 2nd interarea, and its 1st interarea has carried out surface treatment by remover.The 1st interarea that is surface-treated, that show easy fissility and resin bed described later strippingly closely sealed, at the 2nd interarea being in opposition side with the closely sealed side of resin bed, use for electronic equipment component is set.
The kind of glass substrate can be general kind, include, for example out the glass substrate etc. of the such display unit of LCD, OLED.The chemical proofing of glass substrate, resistance to excellent moisture permeability, and percent thermal shrinkage is low.As the index of percent thermal shrinkage, JISR3102(1995 is used to revise) the middle linear expansion coefficient specified.
If the linear expansion coefficient of glass substrate is large, then due to the process of component formation process S112 many heat tracings, therefore easily produce various rough sledding.Such as, when forming TFT on the glass substrate, if the glass substrate cooling of TFT will be formed under heating, then due to the thermal contraction of glass substrate, there is the position of TFT to offset and become excessive worry.
Glass substrate can by frit melting, melten glass is shaped to tabular and obtains.Such manufacturing process can be general forming method, such as, can use float glass process, fusion method, slot draw method, vertical drawing process (fourcaultprocess), mechanical cylinder process (Labbersprocess) etc.In addition, the glass substrate that especially thickness is thin to utilize the glass heats being temporarily shaped to tabular to shapable temperature, obtained by method (horizontal sheet process) shaping of the method tension-thinings such as stretchings.
The glass of glass substrate is not particularly limited, and preferred alkali-free pyrex, pyrex, soda-lime glass, vagcor, other take silica as the oxide based glass of main component.As oxide based glass, the content being preferably based on the silica that oxide converts is the glass of 40 ~ 90 quality %.
As the glass of glass substrate, the applicable kind of use for electronic equipment component, the glass of its manufacturing process can be adopted.Such as, the glass substrate of liquid crystal panel easily has an impact to liquid crystal due to the stripping of alkali metal component, is therefore formed (wherein, generally including alkaline-earth metal composition) by the glass (alkali-free glass) being substantially free of alkali metal component.Like this, the glass of glass substrate suitably can be selected based on the kind of the device be suitable for and manufacturing process thereof.
The thickness of glass substrate is not particularly limited, and from slimming and/or the light-weighted viewpoint of glass substrate, usual below 0.8mm is preferred, is more preferably below 0.3mm, more preferably below 0.15mm.When more than 0.8mm, the slimming of glass substrate and/or light-weighted requirement cannot be met.When below 0.3mm, the flexibility that glass substrate is good can be given.When below 0.15mm, glass substrate can be coiled into roll.In addition, the thickness of glass substrate from reasons such as the processing eases of the easy to manufacture of glass substrate and glass substrate, for more than 0.03mm is preferred.
In addition, glass substrate can be formed by more than 2 layers, and in this situation, the material forming each layer can be same material, also can be not same material.In addition, in this situation, " thickness of glass substrate " refers to the gross thickness of whole layer.
In addition, other stratified materials can be laminated with on a surface of glass substrate.Such as, in order to the intensity of reinforcing glass substrate, can stacked resin bed etc., also can the inorganic matter thin layer such as stacked tin indium oxide, silica.
(remover)
Known remover can be used as remover, include, for example out silicone compound (such as silicone oil etc.), monosilane agent (such as hexamethyldisilane amine etc.), fluorine based compound (such as fluororesin etc.) etc.Remover can use with the form of emulsion-type solvent-borne type no-solvent type.From peeling force, security, cost grade, as one of suitable example, can list containing methyl silicane base (≡ SiCH
3,=Si(CH
3) 2 ,-Si(CH
3)
3in any one) or fluoro-alkyl (-C
mf
2m+1) compound of (m is preferably the integer of 1 ~ 6), as the example that other are suitable, silicone compound or fluorine based compound can be listed, especially preferably silicone oil.
The kind of silicone oil is not particularly limited, and can exemplify out the straight chain silicone oil such as dimethicone, methyl phenyl silicone oil, methyl hydrogen silicone oil, be imported with the modified silicon oil of alkyl, hydrogen base, epoxy radicals, amino, carboxyl, polyether-based, halogen group etc. at the side chain of straight chain silicone oil or end.As the object lesson of straight chain silicone oil, can list methylhydrogenpolysi,oxane, dimethyl polysiloxane, methyl phenyl silicone, diphenylpolysiloxane etc., heat resistance increases by the order listed, and what heat resistance was the highest is diphenylpolysiloxane.Generally speaking these silicone oil are used to the hydrophobic treatment on surface of the substrate such as metal substrate of glass substrate, primary coat process.
Silicone oil is from the view point of the efficiency of process of processed surface conjunction making itself and glass substrate, and the kinematic viscosity preferably at 25 DEG C is 5000mm
2/ below s, is more preferably 500mm
2/ below s.The lower limit of kinematic viscosity is not particularly limited, consider the aspect of operation, cost and be preferably 0.5mm
2/ more than s.
In above-mentioned silicone oil, from the aspect good with the fissility of resin bed, preferred straight chain silicone oil, especially from the high fissility aspect of imparting, preferred dimethyl polysiloxane.In addition at needs fissility and when especially needing heat resistance, preferable methyl phenyl polysiloxane or diphenylpolysiloxane.
The kind of fluorine based compound is not particularly limited, and can list perfluoroalkyl ammonium salt, perfluoroalkyl sulfonamide, perfluoro alkyl sulfonic acid salt (such as perfluoro alkyl sulfonic acid sodium), perfluoroalkyl sylvite, perfluoroalkyl carboxylate salt, perfluoroalkyl ethylene oxide adduct, perfluoroalkyl leptodactyline, perfluoroalkyl sulfamate, perfluoroalkyl phosphate, perfluoroalkyl compound, perfluoroalkyl betaine, perfluoroalkyl halogen compounds etc.In addition, as containing fluoro-alkyl (C
mf
2m+1) compound, include, for example out the compound in the example compound of above-mentioned fluorine based compound with fluoro-alkyl.The upper limit of m is not particularly limited on stripping performance, and set out in the more excellent aspect of security operationally, preferred m is the integer of 1 ~ 6.
(order of operation)
The processing method on the surface of glass substrate according to used remover, suitably can select optimal method.Usually, process on the surface of the 1st interarea of glass substrate by remover being given (being such as coated with).
Such as, under use silicon oil condition, method silicone oil being coated on glass baseplate surface can be listed.Wherein, after coating silicone oil, preferably carry out making silicone oil be incorporated into the process on the processed surface of glass substrate.Make the process of silicone oil and processed surface conjunction be cut off the such process of the strand of silicone oil, cut-off part is incorporated into processed surface (below this process being called the degraded of silicone oil).
The coating process of silicone oil can be general method.Such as suitably can select from spraying process, mould rubbing method, method of spin coating, dip coating, rolling method, stick coating method, silk screen print method, heliogravure rubbing method etc. according to the kind of silicone oil, coating weight etc.
As coating fluid, it is desirable that the solution that silicone oil is diluted to below 5 quality % and obtains by use hexane, heptane, dimethylbenzene, isoparaffin equal solvent.During more than 5 quality %, the degraded processing time is long.
Solvent contained by coating fluid can as required by heating and or the method such as drying under reduced pressure removing.Also can by the heating removing in degraded operation.
The coating weight of silicone oil is preferably 0.1 ~ 10 μ g/cm
2be.Be 0.1 μ g/cm
2time above, fissility is more excellent, therefore preferably, is 10 μ g/cm
2time following, coating and the degraded treatability of coating fluid are more excellent, therefore preferably.
In the method that silicone oil is degraded, can general method be used, such as, have the method by light decomposes, the siloxane bond of silicone oil is cut off in thermal decomposition.The ultraviolet irradiated from low pressure mercury lamp, xenon arc lamp etc. can be utilized in light decomposes, and combinationally use the ozone produced by the Ultraviolet radiation in air.Thermal decomposition can be carried out in batch furnace, transmission stove etc., also can utilize plasma, arc discharge etc.
Once the key of the siloxane bond of silicone oil or silicon atom and carbon atom is cut off, the active site of generation will with the hydroxyl isoreactivity radical reaction on processed surface.Its result, the density of the hydrophobic functional groups such as the methyl in processed surface uprises, and the density of hydrophilic polar group reduces, and result can give processed surface easily fissility.
In addition, the surface of carrying out surface-treated glass substrate is preferably very clean face, is preferably the face after just washing.As washing methods, glass surface can be used, general method that the washing of resin surface uses.
Protect with diaphragms such as masks in advance it is desirable that do not carry out surface-treated surface.
In addition, when using the monosilane agents such as hexamethyldisilane amine, the steam of monosilane agent is preferably made to contact with glass baseplate surface.In addition, can under the state of glass substrate, it be made to contact with the steam of monosilane agent.
The vapor concentration of monosilane agent is higher, namely more close to saturated concentration, more can shorten the processing time, therefore preferably.
As long as monosilane agent and glass substrate time of contact nondestructively peeling glass substrate function just can shorten.
From the aspect of uneven thickness that can suppress the resin bed obtained in curing process S108 described later further, below 2.0nm is preferably by the surface roughness Ra on the surface of the easy fissility of display of the fissility glass substrate of said sequence manufacture, be more preferably below 1.0nm, more preferably below 0.5nm.Lower limit is not particularly limited, and is particularly preferably 0nm.
In addition, the mensuration of surface roughness Ra can use atomic force microscope (manufacture of PacificNanotechnology company, NanoScopeIIIa; ScanRate1.0Hz, SampleLines256, Off-lineModifyFlattenorder-2, Planefitorder-2 etc.) based on JISB0601(2001) carry out.
From the aspect that the stripping at the interface of fissility glass substrate and resin bed is more easily carried out, the water contact angle on the surface of the easy fissility of display of fissility glass substrate is preferably more than 90 °, is more preferably 90 ~ 120 °, more preferably 90 ~ 110 °.
In addition, the mensuration of water contact angle can use contact angle meter (KURUSS company manufactures, DROPSHAPEANALYSISSYSTEMDSA10Mk2 etc.) to carry out.
［ cured resin composition layer formation process ］
Cured resin composition layer formation process S104 be the easy fissility of display of the fissility glass substrate obtained in above-mentioned surface treatment procedure S102 surface on be coated with hardening resin composition, form the operation of uncured cured resin composition layer.More specifically, as shown in (B) of Fig. 2, the surperficial 10a of the display fissility of fissility glass substrate 10 forms uncured cured resin composition layer 12.
Uncured cured resin composition layer is not vacated with the surface of the display fissility of fissility glass substrate contact with gap.Therefore, in curing process S108 described later, when this cured resin composition layer is solidified, the resin bed of the flat surfaces of transfer printing fissility glass substrate can be obtained, the deformation etc. of fissility glass substrate can be suppressed.
First, the hardening resin composition used is described in detail, thereafter the order of this operation S104 is described in detail in this operation.
(hardening resin composition)
The hardening resin composition used in this operation S104 is the composition that can form resin bed (adaptation resin bed) in curing process S108 described later.
As the curable resin contained in hardening resin composition, as long as its cured film has adaptation that can be strippingly closely sealed to object, known curable resin (such as heat-curable composition, Photocurable composition etc.) can be used.Include, for example out curability acrylic resin, curability polyurethane resin, curability silicone etc.Also can mix several curable resin to use.Wherein particularly preferably curability silicone.This is because the heat resistance of silicone resin curability silicone cure obtained, fissility are excellent.In addition because if use curability silicone, then by the condensation reaction of the silanol group with glass baseplate surface described later, easily fix on the glass substrate.
As hardening resin composition, preferred consolidation silicone resin component (the especially preferred curability silicone resin component used in peeling paper is used).The resin bed using this curability silicone resin component to be formed and closely sealed and its Free Surface of glass baseplate surface have excellent easy fissility, therefore preferably.
The curability silicone becoming silicone for release paper resin like this, according to its curing mechanism, can be categorized as condensation reaction type silicone, addition reaction-type silicone, ultraviolet hardening silicone and electron ray curing type silicone, can use any one.In the middle of these, particularly preferably addition reaction-type silicone.This is because curing reaction carry out easness, the degree of fissility is good when forming resin bed, heat resistance is also high.
Addition reaction-type silicone resin component contains host and crosslinking agent, is the composition of curability solidified under the existence of the catalyst such as platinum group catalyst.The solidification of addition reaction-type silicone resin component is promoted by heating.Host in addition reaction-type silicone resin component preferably has and the organopolysiloxane of the thiazolinyl of silicon atom bonding (vinyl etc.) (that is, olefinic organic based polysiloxane.Wherein, preferred straight-chain), thiazolinyls etc. become crosslinking points.Crosslinking agent in addition reaction-type silicone resin component preferably has and the organopolysiloxane of the hydrogen atom of silicon atom bonding (hydrosilyl) (that is, organic hydrogen polysiloxanes.Wherein, preferred straight-chain), hydrosilyl etc. become crosslinking points.
Addition reaction-type silicone resin component carries out addition reaction to solidify by the crosslinking points of host and crosslinking agent.
In addition, from the aspect that the heat resistance being derived from cross-linked structure is more excellent, preferred organic hydrogen polysiloxanes be 0.5 ~ 2 with the mol ratio of the hydrogen atom of silicon atom bonding and the thiazolinyl of olefinic organic based polysiloxane.
In addition, in order to form the peel ply of peeling paper etc. and the curability silicone resin component used morphologically has solvent-borne type, emulsion-type and no-solvent type, any one type can be used.In the middle of these, particularly preferably no-solvent type.This is because the aspect of productivity ratio, security, environmental characteristics is excellent.In addition because, during solidification during the resin bed stated after its formation, be namely heating and curing, ultraviolet curing or electron ray curing time containing the solvent that foaming occurs, thus not easily residual bubble in resin bed.
In addition, the curability silicone resin component used as the peel ply in order to form peeling paper etc., specifically KNS-320A can be listed as commercially available trade name or model, KS-847(is SHIN-ETSUSILICONECO., LTD. manufacture), TPR6700(MomentivePerformanceMaterialsJapanLLC manufactures), the combination of vinyl silicone " 8500 " (manufacture of Huang Chuan chemical industrial company) and methylhydrogenpolysi,oxane " 12031 " (Huang Chuan chemical industrial company manufactures), the combination of vinyl silicone " 11364 " (manufacture of Huang Chuan chemical industrial company) and methylhydrogenpolysi,oxane " 12031 " (Huang Chuan chemical industrial company manufactures), the combination etc. of vinyl silicone " 11365 " (manufacture of Huang Chuan chemical industrial company) and methylhydrogenpolysi,oxane " 12031 " (Huang Chuan chemical industrial company manufactures).
In addition, KNS-320A, KS-847 and TPR6700 are the curability silicone resin component in advance containing host and crosslinking agent.
(order of operation)
The method that the surface of the easy fissility of the display of fissility glass substrate is coated with hardening resin composition is not particularly limited, and can adopt known method.Such as, as coating process, spraying process, mould rubbing method, method of spin coating, dip coating, rolling method, stick coating method, silk screen print method, heliogravure rubbing method etc. can be listed.Suitably can select in the middle of such method according to the kind of hardening resin composition.
In addition, the coating weight of hardening resin composition is not particularly limited, and from the aspect of suitable thickness that can obtain resin bed, is preferably 1 ~ 100g/m
2, be more preferably 5 ~ 20g/m
2.
In addition, in hardening resin composition in solvent-laden situation, as required, can the heating of being cured property resin not state of cure, solvent is volatilized.
Thickness hardening resin composition being coated on the uncured cured resin composition layer that fissility glass substrate obtains is not particularly limited, and can suitably adjust to obtain the resin bed with suitable thickness described later.
The appearance and size of uncured cured resin composition layer formed and the appearance and size of fissility glass substrate are formed objects or less than it.
［ lamination process ］
Lamination process S106 is the carrier substrate by having the appearance and size less than the appearance and size of uncured cured resin composition layer, the mode reserving the peripheral edge margin do not contacted with carrier substrate with the uncured cured resin composition layer obtained in above-mentioned cured resin composition layer formation process S104 is layered in uncured cured resin composition layer, obtains the operation of solidifying front duplexer (implementing solidification duplexer before treatment).In other words, carrier substrate is layered in uncured cured resin composition layer in the mode exposing uncured cured resin composition layer in the periphery of carrier substrate.
More specifically, as shown in (C) of Fig. 2, by this operation S106, by the carrier substrate 14 less than the appearance and size of uncured cured resin composition layer 12, to form the mode of the peripheral edge margin 12a do not contacted with carrier substrate 14 in uncured cured resin composition layer 12, be layered in uncured cured resin composition layer 12 and obtain solidifying front duplexer 16.(A) of Fig. 3 is the top view of duplexer 16 before solidification, and as shown in the drawing, the peripheral edge margin 12a of uncured cured resin composition layer 12 does not contact with carrier substrate 14.
Usually, at the exposing surface of uncured cured resin composition layer 12, near circumference, easily produce protuberance ((B) with reference to Fig. 3) due to its capillary impact.When stacked carrier substrate 14, if with such protrusions contact, then have the situation producing space 32 etc. between carrier substrate 14 and uncured cured resin composition layer 12, as a result, the situation ((C) of Fig. 3) producing carrier substrate 14 and the uncured discontiguous region of cured resin composition layer 12 is had.Once there is such region, then there is the situation that the resin bed obtained in curing process S108 reduces the adaptation of carrier substrate 14.In addition, also there is resin bed to produce the situation of uneven thickness, also can become the reason occurring concave-convex surface at the exposing surface of the carrier substrate of tape tree lipid layer.Further, impurity enters into this space 32, can become the pollution sources polluting use for electronic equipment component, the reason that the output that can become electronic installation reduces.
Therefore, by using, there is the carrier substrate 14 of the appearance and size less than the appearance and size of uncured cured resin composition layer 12, carrier substrate 14 can be made to contact with uncured cured resin composition layer 12 and not with this protrusions contact.As a result, further suppress the generation in the region that carrier substrate 14 does not contact with uncured cured resin composition layer 12, the adaptation of resin bed to carrier substrate 14 is more excellent, and the uneven thickness of resin bed is suppressed further.
First, the carrier substrate used is described in detail, thereafter the order of this operation S106 is described in detail in this operation.
(carrier substrate)
Carrier substrate is the operation manufacturing use for electronic equipment component at component formation process S112(described later) in prevent the substrate of the distortion, damage, breakage etc. of fissility glass substrate when the manufacture of use for electronic equipment component.
As carrier substrate, such as, can use the metallic plates etc. such as glass plate, plastic plate, SUS plate.At component formation process S112 with in heat treated situation, preferred vector substrate is formed by the material that the difference of the linear expansion coefficient with fissility glass substrate is little, and more preferably formed by the material same with fissility glass substrate, carrier substrate is preferably glass plate.Especially preferred vector substrate is the glass plate formed by the glass material identical with fissility glass substrate.
The Thickness Ratio fissility glass-based thickness of slab of carrier substrate also can, Bao Yeke.Preferably, based on the thickness of the thickness selection carrier substrate of duplexer after the thickness of fissility glass substrate, the thickness of resin bed and cut-out described later.Such as, current component formation process carries out the patten's design of component formation process (such as washing, film forming, exposure imaging, inspection etc.) with the component formation substrate (carrier substrate do not have other layer stacked and with the present case of the formal layout of carrier substrate veneer) to thickness 0.5mm, when the thickness of fissility glass substrate and the thickness sum of resin bed are 0.1mm, the thickness of carrier substrate is made to be 0.4mm.The thickness of carrier substrate is preferably 0.2 ~ 5.0mm in normal circumstances.
When carrier substrate is glass plate, the thickness of glass plate from easy to operate, not easily the reason such as to break, be preferably more than 0.08mm.In addition, can not break and the appropriate reason bending such rigidity from having when being desirably in and peeling off after use for electronic equipment component is formed, the thickness of glass plate is preferably below 1.0mm.
The difference of the average coefficient of linear expansion (hereinafter referred to as " average coefficient of linear expansion ") at fissility glass substrate and carrier substrate 25 ~ 300 DEG C is preferably 500 × 10
-7/ DEG C below, be more preferably 300 × 10
-7/ DEG C below, more preferably 200 × 10
-7/ DEG C below.If difference is excessive, then the worry of duplexer warpage severity when having the heating in component formation process S112 to cool.When the material of fissility glass substrate is identical with the material of carrier substrate, can suppress to produce such problem.
(order of operation)
By carrier substrate, the method be layered in uncured cured resin composition layer is not particularly limited, and can adopt known method.
Such as, the method for overlapping carrier substrate on the surface of uncured cured resin composition layer under under atmospheric pressure environment can be listed.In addition, as required, can on the surface of uncured cured resin composition layer after overlapping carrier substrate, carrier substrate is pressed together in uncured cured resin composition layer by use roller, press.By the pressing based on roller or press, the bubble be mixed between uncured cured resin composition layer and the layer of carrier substrate can be removed relatively easily, therefore preferably.
If by vacuum layer platen press, the pressing of Vacuum Pressure method for making, then bubble can be suppressed to be mixed into, guarantee good closely sealed, therefore more preferably.By pressing under vacuo, also can not cause bubble growth because of heating when residual small bubble even if also have, not easily cause the advantage of the deformation defect of carrier substrate.
When stacked carrier substrate, preferably, fully wash the surface of the carrier substrate contacted with uncured cured resin composition layer, stacked under the environment that cleanliness factor is high.Cleanliness factor is higher, and the flatness of carrier substrate is good all the more, therefore preferably.
Before the solidification obtained by above-mentioned operation in duplexer, in order containing the layer of fissility glass substrate and the layer of uncured cured resin composition layer and carrier substrate.
In this embodiment, the appearance and size of uncured cured resin composition layer is larger than the appearance and size of carrier substrate.The ratio (area A/gross area B) of the area A in the region contacted with carrier substrate of uncured cured resin composition layer and the gross area B of uncured cured resin composition layer is preferably less than 0.98, is more preferably less than 0.95.As long as in above-mentioned scope, the generation of the uneven thickness of resin bed just can be suppressed further.Lower limit is not particularly limited, and from aspects such as productivity ratio, is preferably more than 0.75, is more preferably more than 0.80.
In addition, be preferably more than 10mm from the length of periphery genesis to the outer peripheral edge of uncured cured resin composition layer of carrier substrate, be more preferably more than 15mm.As long as in above-mentioned scope, the generation of the uneven thickness of resin bed just can be suppressed further.The upper limit is not particularly limited, and from aspects such as productivity ratio, is preferably below 100mm.
［ curing process ］
Curing process S108 implements solidification process to duplexer before the solidification obtained in above-mentioned lamination process S106, the uncured cured resin composition layer solidification before making solidification in duplexer and the operation of duplexer (implementing the duplexer of solidification process) after obtaining having the solidification of resin bed.More specifically, as shown in (D) of Fig. 2, by implementing this operation, uncured cured resin composition layer 12 is solidified and obtains resin bed 18, can be had duplexer 20 after the solidification of the layer of fissility glass substrate 10 and the layer of resin bed 18 and carrier substrate 14 in order.
Below the order of the operation implemented in this operation is described in detail, thereafter the formation of gained duplexer is described in detail.
(order of operation)
The solidification process implemented in this operation can suitably select optimal method according to the kind of used curable resin, usually, carries out heating or exposure-processed.
When the curable resin contained in cured resin composition layer is Thermocurable, implement to heat to uncured cured resin composition layer, this layer of solidification can be made thus.The condition heated can suitably select optimal condition according to the kind of used heat-curing resin.Wherein, from aspects such as the curing rate of curable resin and the heat resistances of resin bed that formed, it is preferred for carrying out that 10 ~ 120 minutes (being preferably 30 ~ 60 minutes) heat with 150 ~ 300 DEG C (being preferably 180 ~ 250 DEG C).
When the curable resin contained in cured resin composition layer is light-cured resin, by implementing exposure-processed to uncured cured resin composition layer, this layer of solidification can be made.The kind of the light irradiated when exposure-processed suitably can be selected according to the kind of light-cured resin, include, for example out ultraviolet light, visible ray, infrared light etc.In addition, from aspects such as the curing rate of curable resin and the lights resistance of resin bed that formed, the irradiation time when exposure-processed is 0.1 ~ 10 minute (being preferably 0.5 ~ 5 minute) is preferred.
(resin bed)
Then, the resin bed in duplexer after solidification is described in detail.
The thickness of resin bed is not particularly limited, and is preferably 1 ~ 100 μm, is more preferably 5 ~ 30 μm, more preferably 7 ~ 20 μm.This is because when the thickness of resin bed is such scope, resin bed and the closely sealed of carrier substrate become abundant.In addition because, even if between resin bed and carrier substrate entrained air bubbles, impurity, also can suppress the generation of the deformation defect of fissility glass substrate.In addition, the thickness of if tree lipid layer is blocked up, then in formation, need time and materials, therefore uneconomical.
In addition, resin bed can be formed by more than 2 layers.In this situation, " thickness of resin bed " refers to the gross thickness of whole layer.
In addition, when resin bed is formed by more than 2 layers, the kind forming the resin of each layer can be different.
Resin bed preferably material that is lower than room temperature (about 25 DEG C) by glass transition point or that do not have a glass transition point is formed.This is because, more easily can peel off with fissility glass substrate, also become abundant with the closely sealed of fissility glass substrate simultaneously.
The kind forming the resin of resin bed is not particularly limited, different according to the above-mentioned hardening resin composition resiniferous kind of institute.Include, for example out acrylic resin, polyolefin-based resins, polyurethane resin or silicone resin.Wherein, as mentioned above, preferred silicone resin.
In addition, resin bed can contain the organopolysiloxane of non-curable as required, and its content specifically can list below 5 quality % (0 ~ 5 quality %), is preferably 0.01 ~ 1 quality %.If the organopolysiloxane containing non-curable in resin bed, then the stripping at the fissility glass substrate in separation circuit S114 described later and the interface of resin bed can more effectively be carried out.
The method that resin bed contains the organopolysiloxane of this non-curable is not particularly limited, the method be added in above-mentioned hardening resin composition can be listed.
In addition, as the organopolysiloxane of non-curable, can list not containing Si-H key silicone oil, be specifically the silicone oil etc. of dimethyl silicone polymer system or PSI system.
(after solidification duplexer)
After the solidification obtained by above-mentioned curing process, duplexer has the layer of fissility glass substrate and the layer of resin bed and carrier substrate in order.
After gained solidification in duplexer, resin bed is fixed (bonding) on carrier substrate, in addition, strippingly closely sealed with fissility glass substrate.Resin bed prevents the position offset straight of fissility glass substrate to carry out the operation of the carrier substrate being separated fissility glass substrate and tape tree lipid layer in separation circuit S114 described later.
The surface contacted with resin bed of fissility glass substrate and the surface of resin bed strippingly closely sealed.In the present invention, the character that can easily peel off of this fissility glass substrate is called easy fissility.
In the present invention, above-mentioned fixing closely sealed upper different in peel strength (namely peeling off required stress) from (strippingly), Stationary liquid, for closely sealed, means that peel strength is larger.Specifically, the resin bed after solidification in duplexer is larger than the peel strength at the layer of fissility glass substrate and the interface of resin bed with the peel strength at the interface of the layer of carrier substrate.
In addition, strippingly closely sealedly to refer to, strippable while, stationary plane can not be produced and peel off with peeling off.Specifically refer to, after hardening in duplexer, when carrying out the operation being separated fissility glass substrate and carrier substrate, peel off in closely sealed face, do not peel off in fixing face.Therefore, carry out when after solidification, duplexer is separated into the operation of fissility glass substrate and carrier substrate, after solidification, duplexer is separated into the carrier substrate these two of fissility glass substrate and tape tree lipid layer.
As mentioned above, solidify owing to reacting under the state that contacts with carrier substrate surface in uncured cured resin composition layer, therefore formed resin bed is bonded in carrier substrate surface securely.On the other hand, uncured cured resin composition layer is also reacted and is solidified under the state contacted with fissility glass substrate, but due to the easy fissility (non-tack) of fissility glass baseplate surface, the resin bed formed is closely sealed with the adhesion that adhesion from the Van der Waals force between molecular solids etc. is weak relative to fissility glass substrate.
［ cut-out operation ］
Cutting off operation S110 is the operation that the outer peripheral edge of carrier substrate after the solidification obtained in above-mentioned curing process S108 in duplexer cuts off resin bed and fissility glass substrate.In other words, be that the resin bed after solidification in duplexer and fissility glass substrate peripheral part are separately cut off, make the operation of all-round alignment of carrier substrate, resin bed and fissility glass substrate outer peripheral edge separately.More specifically, as shown in (E) of Fig. 2, by this operation, along the outer peripheral edge of carrier substrate 14, cut off resin bed 18 and fissility glass substrate 10, obtain cutting off rear duplexer 22(and implement the duplexer cutting off process).
Below, the order of this operation S110 is described in detail.
The method cutting off resin bed and fissility glass substrate is not particularly limited, and can adopt known method.Such as, the cutting-off method illustrated based on Fig. 4 ~ Fig. 6 is preferred from aspects such as operability.
Fig. 4 is the plane making part perspective represent duplexer after the solidification be positioned on microscope carrier, Fig. 5 makes a part destroy the sectional view representing duplexer and processing head after the solidification be positioned on microscope carrier, and Fig. 6 is duplexer and seize the sectional view of fixture on both sides by the arms after representing the solidification that is positioned on other microscope carrier.
As shown in Figure 4, after solidification, the interarea of the carrier substrate 14 of duplexer 20 is supported by microscope carrier 50, and the outer peripheral edge of carrier substrate and the position be arranged on microscope carrier 50 determine that block 51 ~ 53 abuts.
In the diagram, the exposing surface of carrier substrate 14 is supported by the upper surface of microscope carrier 50, and with position, mutually perpendicular 2 limit 14a and 14b of rectangular-shaped carrier substrate 14 determine that block 51 ~ 53 abuts.Thereafter, movable block 54,55 close to and be connected to remaining each limit 14c, 14d of carrier substrate 14.
As shown in Figure 4, if the outer peripheral edge of carrier substrate 14 and position determine that block 51 ~ 53 abuts, then the outer peripheral edge of carrier substrate 14 and the location matches precision of microscope carrier 50 become good.Therefore, can align well with the outer peripheral edge precision of resin bed 18 and fissility glass substrate 10 in the outer peripheral edge of carrier substrate 14.
In addition, by be arranged on the upper surface of microscope carrier 50 multiple adsorption holes in decompressions such as vavuum pumps, carrier substrate 14 is adsorbed on the upper surface of microscope carrier 50.At the upper surface of microscope carrier 50, in order to protect carrier substrate 14, can resin molding etc. be set.
Then, duplexer 20 after the solidification on filming apparatus shooting microscope carrier 50.Take the image obtained and be transmitted to computer.Computer carries out image procossing to the image received, and detects the outer peripheral edge of carrier substrate 14 and the position relationship of microscope carrier 50.
Then, computer based is in the result of image procossing, and after processing is solidified, the processing head 60 of duplexer 20 is relative to microscope carrier 50 relative movement.The motion track of controlled working head 60 is with overlap with the outer peripheral edge of carrier substrate 14 when overlooking (with reference to Fig. 5).
In addition, in the present embodiment, computer utilizes the result of image procossing in order to the motion track of controlled working head, but also can replace the information that its geomery utilizing the carrier substrate prestored in storage mediums such as hard disk etc. is relevant.In this situation, do not need filming apparatus.
Processing head 60 shown in Fig. 5 is formed according to the kind, thickness etc. of fissility glass substrate 10.Such as, processing head 60 forms line of cut 66 on the surface of fissility glass substrate 10, is made up of cutter 62 etc.
Cutter 62 is such as the formation such as discoideus, peripheral part diamond, superalloy, and support 64 rotatably supports.By the peripheral part of cutter 62 by under the state on surface being pressed in fissility glass substrate 10, make support 64 in the face of fissility glass substrate 10 during the relative movement of direction, cutter 62 rotates and forms line of cut 66 on the surface of fissility glass substrate 10.
Line of cut 66 is corresponding with 4 limit 14a, 14b, 14c, 14d of rectangular-shaped carrier substrate 14, arranging 4, being formed respectively in the mode overlapped with the corresponding sides of carrier substrate 14 when overlooking.Each line of cut 66 with the mode on the surface of disjunction fissility glass substrate 10 from fissility glass substrate 10 while extend to other limit.
In addition, the processing head 60 of the present embodiment shown in Fig. 5 is made up of cutter 62 etc., but also can be cone shape for front end and be formed, cut by slip the most advanced and sophisticated marking-off pin (pointscriber) of line of cut by diamond, also can be made up of LASER Light Source etc.LASER Light Source is to the surperficial point of irradiation light of fissility glass substrate 10.Point light scans on the surface of fissility glass substrate 10, forms line of cut 66 by thermal stress.
After forming line of cut 66 by processing head 60, vavuum pump stops action, to atmosphere opening in suction hole, removes and attracts.Then, movable block 54,55 leaves from carrier substrate 14, and carrier substrate 14 determines that from position block 51 ~ 53 leaves.Thereafter, after solidification, duplexer 20 is raised to the top of microscope carrier 50, is transplanted on the top of other microscope carrier 70.Next, after solidification, duplexer 20 is reduced to below, is placed in microscope carrier 70(with reference to Fig. 6).
Then, as shown in Figure 6, by be arranged on the upper surface of microscope carrier 70 multiple suction holes in decompressions such as vavuum pumps, carrier substrate 14 is adsorbed on the upper surface of microscope carrier 70.In this condition, a line of cut 66 is exposed in the outside of microscope carrier 70.
Then, thickness of slab direction seizes with seizing fixture 72 on both sides by the arms the part be in outside a line of cut 66 on both sides by the arms.In this condition, seize fixture 72 on both sides by the arms when rotating in downward direction, bending stress is applied with to fissility glass substrate 10 and resin bed 18, therefore on thickness of slab direction, extend expansion as starting point crack 68 using 1 line of cut 66, fissility glass substrate 10 and resin bed 18 are together cut off (with reference to Fig. 6).
Then, remove the absorption of the carrier substrate 14 on microscope carrier 50, after solidification, duplexer 20 moves in parallel or after 90 ° of rotations, is again adsorbed.Thereafter, along other 1 line of cut 66, fissility glass substrate 10 and resin bed 18 are cut off.Repeat this operation, along 4 lines of cut 66, fissility glass substrate 10 and resin bed 18 are cut off.
In addition, in the present embodiment, in order to cut off, duplexer after solidification is transplanted on other microscope carrier 70 from microscope carrier 50, but also can move in parallel on same microscope carrier 50 or cut off after 90 ° of rotations.In addition, chamfered can be implemented to the portion of cutting off as required.
［ component formation process ］
Component formation process S112 be fissility glass substrate after the cut-out of gained in above-mentioned cut-out operation S110 in duplexer the 2nd interarea on form use for electronic equipment component, obtain the operation of the duplexer of electronic device component.
More specifically, as shown in (F) of Fig. 2, the 2nd interarea 10b of fissility glass substrate 10 forms use for electronic equipment component 24, obtains the duplexer 26 of electronic device component.
First, the use for electronic equipment component used in this operation is described in detail, thereafter the order of operation is described in detail.
(use for electronic equipment component (functional element))
Use for electronic equipment component is the component at least partially of the electronic installation that the 2nd interarea of the fissility glass substrate formed in duplexer is after severance formed.More specifically, as use for electronic equipment component, display unit panel, solar cell, film 2 primary cell can be listed or be formed with the component used in the electronic unit such as semiconductor wafer etc. of circuit on surface.As display unit panel, comprise organic EL panel, plasma display, field emission panels etc.
Such as, as component used for solar batteries, the transparency electrodes such as the tin oxide of positive pole can be listed in silicon type, with the metal etc. of the silicon layer that p layer/i layer/n layer represents and negative pole, other can list the various components etc. corresponding with compound type, dye sensitization type, quantum point type etc.
In addition, as film 2 primary cell component, can list transparency electrode, the lithium compound of dielectric substrate, the metal of current collection layer, the resin etc. as encapsulated layer such as metal or metal oxide of positive pole and negative pole in type lithium ion, other can list the various components etc. corresponding with ni-mh type, polymer-type, ceramic electrolyte type etc.
In addition, as electronic component-use component, can list the metal of conductive part, the silica, silicon nitride etc. of insulation division in CCD, CMOS, other can list the various components etc. corresponding with the various sensor of pressure sensor acceleration sensor, rigidity printed base plate, flexible printing substrate, rigidity flexible printing substrate etc.
(order of operation)
The manufacture method of the duplexer of above-mentioned electronic device component is not particularly limited, according to the existing known method of kind of the member of formation of use for electronic equipment component, the 2nd main surface of the fissility glass substrate of duplexer after severance forms use for electronic equipment component.
In addition, use for electronic equipment component can not be whole (hereinafter referred to as " whole components ") of the component finally formed at the 2nd interarea of fissility glass substrate, but a part (hereinafter referred to as " partial component ") for whole components.Also the fissility glass substrate of the band portion component peeled off from resin bed can be formed in operation thereafter the fissility glass substrate (being equivalent to electronic installation described later) of the whole component of band.
In addition, the duplexer being with whole component can be assembled, carry thereafter the carrier substrate of the duplexer release band resin bed of whole component to manufacture electronic installation.Further, also can use two duplexer assembling electronic installations being with whole component, the duplexer carrying thereafter whole component peels off the carrier substrate of two tape tree lipid layer to manufacture electronic installation.
Such as, during to manufacture the situation of OLED, in order on the surface of the opposition side of the resin bed side of the fissility glass substrate of duplexer after severance, (being equivalent to the 2nd interarea of fissility glass substrate) forms organic EL structure, carry out forming transparency electrode so that on the face defining transparency electrode evaporation hole injection layer hole transmission layer luminescent layer electron transfer layer etc., form backplate, use that the various layers such as package board encapsulation are formed, process.Formed as these layers, process, specifically, include, for example out the bonding process etc. of film forming process, vapor deposition treatment, package board.
In addition, such as, the manufacture method of TFT-LCD has following various operation: TFT formation process, on 2nd interarea of the fissility glass substrate of duplexer after severance, use anti-corrosion liquid, the metal film formed in the membrane formation process general by CVD and sputtering method etc. and metal oxide film etc. carry out pattern and forms thin film transistor (TFT) (TFT); With CF formation process, after other cut-out the glass substrate of duplexer the 2nd interarea 1 on, use anti-corrosion liquid in the patterning, formed colour filter (CF); And bonding process, by stacked via encapsulation agent (seal) in the mode that TFT and CF is relative for the duplexer of the band CF obtained in the duplexer of the band TFT obtained in TFT formation process and CF formation process; Deng.
In TFT formation process, CF formation process, use well-known photoetching technique, etching technique etc., form TFT, CF at the 2nd interarea of fissility glass substrate.Now, the coating fluid formed as pattern can use anti-corrosion liquid.
In addition, before formation TFT, CF, as required, the 2nd interarea of fissility glass substrate can be washed.As washing methods, well-known dry washing, wet scrubbing can be used.
In bonding process, such as, between the duplexer and the duplexer of band CF of band TFT, inject liquid crystal material stacked.As the method injecting liquid crystal material, such as, there is decompression injection method, drip injection method.
［ separation circuit ］
Separation circuit S114 is the duplexer of the electronic device component obtained in above-mentioned component formation process S112, using the interface of fissility glass substrate and resin bed as release surface, removing has the carrier substrate of the tape tree lipid layer of resin bed and carrier substrate, obtains the operation of the electronic installation with fissility glass substrate and use for electronic equipment component.More specifically, as described in (G) of Fig. 2, by this operation S114, the duplexer 26 carrying use for electronic equipment component is separated the carrier substrate 28 of removing tape tree lipid layer, obtains the electronic installation 30 comprising fissility glass substrate 10 and use for electronic equipment component 24.
When use for electronic equipment component on fissility glass substrate during stripping is a part for the formation of necessary whole member of formation, after can being separated, on fissility glass substrate, form remaining member of formation.
The method that fissility glass substrate and resin bed are peeled off is not particularly limited.Specifically, such as, can insert the object of sharp keen cutlery shape at the interface of fissility glass substrate and resin bed, give and peel off opportunity, on this basis, such as, blow water and compressed-air actuated fluid-mixing is peeled off.Preferably, with the carrier substrate in the duplexer of electronic device component become upside, use for electronic equipment component become downside mode be arranged on platform, by use for electronic equipment member side vacuum suction on platform, under this state, cutlery is first made to invade the interface of fissility glass substrate and resin bed.Thereafter by multiple vacuum suction pad absorption carrier substrate-side, near the position of inserting cutlery, vacuum suction pad is made to increase successively.So, the interface of fissility glass substrate and resin bed defines air layer, and this air layer extends to whole of interface, the carrier substrate of tape tree lipid layer easily can be peeled off.
In addition, when carrying the carrier substrate of duplexer removing tape tree lipid layer of use for electronic equipment component, by based on the blowing of electro-dissociator, controlled humidity, the electrostatic that likely can affect electronic installation can be suppressed.Or, the circuit, the assembling protection circuit and outside from portion of terminal conducting to duplexer that consume electrostatic can be assembled in an electronic.
Suitable in the manufacture of the compact display apparatus that the electronic installation obtained by above-mentioned operation is used at the mobile terminal that mobile phone, PDA are such.Display unit is mainly LCD or OLED, as LCD, comprises TN type, STN type, FE type, TFT type, mim type, IPS type, VA type etc.Substantially the situation of any display unit in passive driving types, active-drive is gone for.
［ the 2nd embodiment ］
Fig. 7 is the flow chart of the manufacturing process in other embodiments of the manufacture method that electronic installation of the present invention is shown.As shown in Figure 7, the manufacture method of electronic installation possesses surface treatment procedure S102, cured resin composition layer formation process S104, lamination process S106, bubble removal step S116, curing process S108, cuts off operation S110, component formation process S112 and separation circuit S114.
Each operation shown in Fig. 7 is except possessing this point of bubble removal step S116, and be same order with the operation shown in Fig. 1, mark same reference marks in same operation, the description thereof will be omitted, is mainly below described bubble removal step S116.
［ bubble removal step ］
Bubble removal step S116 is after above-mentioned lamination process S106 and before curing process S108, carries out the operation of the deaeration process of uncured cured resin composition layer.By arranging this operation S116, can from the removing of uncured cured resin composition layer bubble, volatile component, the adaptation of strengthening gained resin bed and carrier substrate further.
The processing method of bubble removal step can suitably select optimal method according to the material of used uncured cured resin composition layer, the ultrasonic wave deaeration etc. that include, for example out the vacuum deaerator of use vavuum pump, use the centrifugation deaeration of centrifugal force, use ultrasonic wave defoaming device.From aspects such as productivity ratio, preferably under reduced pressure carry out the vacuum deaerator of deaeration process, as its condition, preferably implement deaeration process in about 1 ~ 30 minute with below 1000Pa (being preferably below 100Pa).
Embodiment
Below, specifically describe the present invention by embodiment etc., the present invention is not by any restriction of these examples.
In following embodiment 1 and 4 ~ 6, comparative example 1 ~ 2, as the glass substrate of fissility glass substrate, use the glass plate (long 760mm, wide 640mm, thickness of slab 0.3mm, the linear expansion coefficient 38 × 10 that are formed by alkali-free pyrex
-7/ DEG C, Asahi Glass company manufactures trade name " AN100 ").In addition, as carrier substrate, use the glass plate (long 720mm, wide 600mm, thickness of slab 0.7mm, the linear expansion coefficient 38 × 10 that are formed by identical alkali-free pyrex
-7/ DEG C, Asahi Glass company manufactures trade name " AN100 ").
(embodiment 1)
The glass substrate used as fissility glass substrate is carried out pure water, UV washing, by clean surface.Thereafter, applying mask to the 2nd interarea of the one side as glass substrate, on this basis, is the n-heptane solution also drying of 1 quality % at the 1st interarea sprayed silicon oil content of opposition side.Silicone oil uses dimethyl polysiloxane, and (DowCorningCorporation manufactures, SH200, kinematic viscosity 190 ~ 210mm
2/ s).Next, in order to the degraded heating carrying out 5 minutes at 350 DEG C of silicone oil, fissility glass substrate is obtained.
Thereafter, use contact angle meter (KRUSS company manufactures, DROPSHAPEANALYSISSYSTEMDSA10Mk2) to measure the water contact angle of the 1st interarea of fissility glass substrate, result is 100 °.
In addition, (PacificNanotechnology company manufactures, NanoScopeIIIa to use atomic force microscope; ScanRate1.0Hz, SampleLines256, Off-lineModifyFlattenorder-2, Planefitorder-2) measure the average surface roughness Ra of the 1st interarea of fissility glass substrate, result is 0.5nm.Average surface roughness Ra is calculated by the measured value of measurement range 10 μm of surroundings.
Then, on the 1st interarea of fissility glass substrate, the straight-chain olefinic organic based polysiloxane (vinyl silicone of vinyl will be had at two ends with screen process press, Huang Chuan chemical industrial company manufactures, 8500), (Huang Chuan chemical industrial company manufactures with the methylhydrogenpolysi,oxane in molecule with hydrosilyl, 12031), (Huang Chuan chemical industrial company manufactures with platinum group catalyst, CAT12070) mixed liquor, with long 750mm, the size coating rectangularity of wide 630mm, the uncured layer containing curability silicone is arranged on (coated weight 35g/m on fissility glass substrate
2).At this, the mixing ratio of straight-chain olefinic organic based polysiloxane and methylhydrogenpolysi,oxane is regulated to become 1:1 to make the mol ratio of vinyl and hydrosilyl.In addition, platinum group catalyst is 5 mass parts relative to straight-chain olefinic organic based polysiloxane and methylhydrogenpolysi,oxane summation 100 mass parts.
Then, the carrier substrate of thickness of slab 0.4mm carried out pure water with the face (the 1st interarea) of silicone resin contact side, carry out thereafter UV washing and come purifying.Thereafter, the 1st interarea of carrier substrate and the uncured layer containing curability silicone are at room temperature fitted by vacuum pressing, under 30Pa, leaves standstill 5 minutes, carry out the deaeration process of the uncured layer containing curability silicone, obtain solidifying front duplexer A0.Now, to reserve the mode of the peripheral edge margin do not contacted with carrier substrate at the uncured layer containing curability silicone, carrier substrate is layered on the uncured layer containing curability silicone.Wherein, the length of stopping to the outer peripheral edge of uncured cured resin composition layer from the periphery genesis of carrier substrate is about more than 15mm.In addition, the area A in the region contacted with carrier substrate of uncured cured resin composition layer is 0.91 with the ratio (area A/gross area B) of the gross area B of uncured cured resin composition layer.
Then, it is heating and curing in an atmosphere 30 minutes at 250 DEG C, obtains duplexer A1 after the solidification of the silicone resin layer that have cured containing thickness 10 μm.
Next, the carrier substrate of duplexer A1 after solidification is fixed on and position is installed determines on the platform of fixture, from the upper surface of platform in the mode overlapped with the limit of the outer peripheral edge of carrier substrate, 2nd interarea of fissility glass substrate carves line of cut with diamond rotating wheel blade, then sandwiches the outside of the line of cut of fissility glass substrate with seizing fixture on both sides by the arms and cut off.Similarly, the outside of the fissility glass overlapped with remaining 3 limits, the outer peripheral edge of carrier substrate is cut off, then implement chamfering with the cross section of cutting of the whetstone grinding fissility glass substrate with curved surface, obtain cutting off rear duplexer A2.
Next, by opposing face (the 2nd interarea) vacuum suction of the silicone resin contact surface of the fissility glass substrate in duplexer A2 after cut-out in platform, on this basis, the stainless steel cutlery of the fissility glass substrate in 1 bight in 4 bights of fissility glass substrate and the interface inserting thickness 0.1mm of silicone resin layer, gives at the interface of fissility glass substrate and silicone resin layer and peels off opportunity.Next, be adsorbed on carrier substrate surface with 24 vacuum suction pads, on this basis, pave from the absorption close with the bight of inserting cutlery and make it increase successively.Herein while blow except electronic fluids while carry out the insertion of cutlery from electro-dissociator (KEYENCECORPORATION manufacture) to this interface.Then, continue to blow except electronic fluids while mention vacuum suction pad from electro-dissociator towards the space formed.Its result, can peel off the carrier substrate (carrier substrate of tape tree lipid layer) being formed with silicone resin layer at the 1st interarea on platform.Now, on the face (1st interarea) closely sealed with silicone resin layer of fissility glass substrate, the visual attachment not seeing silicone resin.In addition, by this result, can confirm that resin bed is larger than the peel strength at the layer of fissility glass substrate and the interface of resin bed with the peel strength at the interface of the layer of carrier substrate.
(embodiment 2)
As carrier substrate and glass substrate, use the glass plate formed by soda-lime glass, in addition by method similarly to Example 1, obtain cutting off rear duplexer B2.In addition, the carrier substrate of use is identical with the size of glass substrate with the carrier substrate used in the size of glass substrate and embodiment 1.
Then, by method similarly to Example 1, the carrier substrate of duplexer B2 release band resin bed of having no progeny of autotomying, obtains soda-lime glass substrate B3(fissility glass substrate).Now, the upper visual attachment not seeing silicone resin in the face (1st interarea) closely sealed with silicone resin layer of soda-lime glass substrate B3.
(embodiment 3)
As carrier substrate and glass substrate, use the glass plate formed by chemically strengthened glass plate, in addition by method similarly to Example 1, obtain cutting off rear duplexer C2.In addition, the carrier substrate of use is identical with the size of glass substrate with the carrier substrate used in the size of glass substrate and embodiment 1.
Then, by method similarly to Example 1, the carrier substrate of duplexer C2 release band resin bed of having no progeny of autotomying, obtains chemically strengthened glass substrate C3(fissility glass substrate).Now, the upper visual attachment not seeing silicone resin in the face (1st interarea) closely sealed with silicone resin layer of glass substrate C3.
(embodiment 4)
By on the 1st interarea of glass substrate, namely carry out pure water with the face of silicone resin contact side, UV washing thereafter comes purifying, and then by magnetron sputtering method, (heating-up temperature 300 DEG C becomes film pressure 5mTorr, power density 0.5W/cm on purifying face
2) form the film (sheet resistance 300 Ω/) of the tin indium oxide of thickness 10nm, thereafter on the film of tin indium oxide, sprayed silicon oil content is the n-heptane solution also drying of 1 quality %, in addition by method similarly to Example 1, obtain cutting off rear duplexer D2.
Then, by method similarly to Example 1, the carrier substrate of duplexer D2 release band resin bed of having no progeny of autotomying, obtains the glass substrate D3(fissility glass substrate being formed with the thin layer of tin indium oxide at the 1st interarea).Now, the upper visual attachment not seeing silicone resin in the face (1st interarea) closely sealed with silicone resin layer of glass substrate D3.
(embodiment 5)
In this example, after using gained in embodiment 1 to cut off, duplexer A2 makes OLED.
More specifically, on the 2nd interarea of the fissility glass substrate of duplexer A2 after severance, making molybdenum film forming by sputtering method, forming gate electrode by employing photolithographic etching.Then, pass through plasma CVD method, in the 2nd interarea side of fissility glass substrate being provided with gate electrode, further with the order film forming of silicon nitride, intrinsic amorphous silicon, N-shaped non-crystalline silicon, then, making molybdenum film forming by sputtering method, by employing photolithographic etching, forming gate insulating film, semiconductor element portion and source/drain electrode.Then, by plasma CVD method, in the 2nd interarea side of fissility glass substrate, making silicon nitride film forming form passivation layer further, then make tin indium oxide film forming by sputtering method, by employing photolithographic etching, forming pixel electrode.
Next, in the 2nd interarea side of fissility glass substrate, further by vapour deposition method successively film forming 4,4 '; 4 "-three (3-methylphenylphenyl amino) triphenylamine as hole injection layer, two [(N-naphthyl)-N-phenyl] benzidine as hole transmission layer, be mixed with 2 in oxine aluminum complex (Alq3), 6-two [4-[N-(4-methoxyphenyl)-N-phenyl] aminostyryl ］ material of naphthalene-1,5-dintrile (BSN-BCN) 40 volume % is as luminescent layer, Alq
3as electron transfer layer.Then, aluminium film forming is made in the 2nd interarea side of fissility glass substrate by sputtering method, by employing photolithographic etching shape paired electrode.Then, defining on the 2nd interarea to the fissility glass substrate of electrode, another glass substrate of fitting of the adhesive linkage via ultraviolet hardening encapsulates.By said sequence obtain there is the cut-out of organic EL structure on fissility glass substrate after duplexer A2 be equivalent to be with display unit panel (panel A2) (duplexer of electronic device component) of carrier substrate.
Next, by the encapsulation side vacuum suction of panel A2 in platform, on this basis, the stainless steel cutlery of the interface inserting thickness 0.1mm of the fissility glass substrate in the bight of panel A2 and silicone resin layer, from the carrier substrate of panel A2 separating belt resin bed, obtain oled panel and (be equivalent to electronic installation.Hereinafter referred to as panel A).
Connecting IC driver to the panel A made makes it drive, and result does not confirm display uneven in drive area.
(embodiment 6)
In this example, after using gained in embodiment 1 to cut off, duplexer A2 makes LCD.
Prepare 2 cut off after duplexer A2, first, after the cut-out of a side fissility glass substrate of duplexer A2 the 2nd interarea on, make molybdenum film forming by sputtering method, by employ photolithographic etching formation gate electrode.Then, pass through plasma CVD method, in the 2nd interarea side of fissility glass substrate being provided with gate electrode, further with the order film forming of silicon nitride, intrinsic amorphous silicon, N-shaped non-crystalline silicon, then, making molybdenum film forming by sputtering method, by employing photolithographic etching, forming gate insulating film, semiconductor element portion and source/drain electrode.Then, by plasma CVD method, in the 2nd interarea side of fissility glass substrate, making silicon nitride film forming form passivation layer further, then make tin indium oxide film forming by sputtering method, by employing photolithographic etching, forming pixel electrode.Then, on the 2nd interarea of fissility glass substrate being formed with pixel electrode, by rolling method coating polyimide resin liquid, form oriented layer by heat cure, grind.After being cut off by gained, duplexer A2 is called the rear duplexer A2-1 of cut-out.
Then, after the cut-out of the opposing party the fissility glass substrate of duplexer A2 the 2nd interarea on, make chromium film forming by sputtering method, by employ photolithographic etching formed light shield layer.Then, in the 2nd interarea side of fissility glass substrate being provided with light shield layer, further by mould rubbing method coating chromatic resist, lithographically and heat cure form color-filter layer.Then, in the 2nd interarea side of fissility glass substrate, tin indium oxide film forming is made further by sputtering method, shape paired electrode.Then, be provided with on the 2nd interarea to the fissility glass substrate of electrode, by mould rubbing method coated UV line cured resin liquid, lithographically and heat cure formed column spacer.Then, on the 2nd interarea of fissility glass substrate being formed with column spacer, by rolling method coating polyimide resin liquid, form oriented layer by heat cure, grind.Then, in the 2nd interarea side of fissility glass substrate, encapsulation resin liquid is depicted as frame-shaped by distributor method, liquid crystal is dripped by distributor method in frame, then duplexer A2-1 after above-mentioned cut-out is used, after cutting off 2, fit each other in the 2nd interarea side of the fissility glass substrate of duplexer A2, obtains the duplexer with LCD by ultraviolet curing and heat cure.Below the duplexer with LCD is herein called the duplexer B2 of panel.
Then, peel off the carrier substrate of two sides band resin bed similarly to Example 1 from the duplexer B2 of panel, the LCD B(obtaining being formed by the glass substrate being formed with tft array and the glass substrate that is formed with colour filter is equivalent to electronic installation).
Connecting IC driver to the LCD B made makes it drive, and result does not confirm display uneven in drive area.
(comparative example 1)
Similarly to Example 1, the 1st interarea of carrier substrate is carried out pure water, UV washing comes purifying.
Then, the straight-chain olefinic organic based polysiloxane having vinyl at end in embodiment 1 and the mixture in molecule with the methylhydrogenpolysi,oxane of hydrosilyl and mixed liquor 99.5 mass parts of platinum group catalyst and 0.5 mass parts silicone oil (DowCorningCorporation manufactures, SH200) are coated on the 1st interarea of carrier substrate by serigraphy.Then, it is carried out at 250 DEG C 30 minutes be heating and curing in an atmosphere, form the silicone resin layer that have cured of thickness 10 μm.
Next, pure water is carried out to the 1st interarea of glass substrate, UV washing comes purifying, then at room temperature make it closely sealed with the silicone resin layer formed on the 1st interarea of carrier substrate by vacuum pressing, obtain duplexer P1.
Next, on the glass substrate of duplexer P1, by sequentially built OLED similarly to Example 5, the then carrier substrate of release band resin bed, obtains oled panel (hereinafter referred to as panel P).
Connecting IC driver to the panel P made makes it drive, result, and confirm display in drive area uneven, bad portion is present in the part near the end being equivalent to duplexer P1.
(comparative example 2)
2 duplexer P1 are obtained by the method same with comparative example 1.
Then, according to order similarly to Example 6, use 2 duplexer P1, obtain the duplexer with LCD.And then, peel off the carrier substrate of two sides band resin bed from gained duplexer, obtain LCD (hereinafter referred to as panel Q).
Connecting IC driver to the panel Q made makes it drive, result, and confirm display in drive area uneven, bad portion is present in the part near the end being equivalent to duplexer P1.
As shown in above-described embodiment 5 and 6, according to the manufacture method of electronic installation of the present invention, can the electronic installation of productive rate manufacturing property excellence well.
On the other hand, in the existing method described in patent document 1, as shown in above-mentioned comparative example 1 and 2, there is the situation that gained electronic performance reduces.In comparative example 1 and 2, display can be seen uneven near the end of electronic installation (circumference).This thinks, as mentioned above, processed in the resin bed outer peripheral edge of resin bed (especially near) obtained by solidification, due to uneven thickness, between glass substrate and resin bed, produce space, impurity enters in this space and causes the performance of electronic installation to reduce.
The application is the application that the Japanese Patent of applying for based on October 12nd, 2011 to be willing to 2011-225239, and its content is introduced in this as reference.
Claims (10)
1. a manufacture method for electronic installation, it is the manufacture method of the electronic installation comprising fissility glass substrate and use for electronic equipment component,
This manufacture method possesses:
Surface treatment procedure, has described 1st interarea of the glass substrate of the 1st interarea and the 2nd interarea, obtains the fissility glass substrate with the surface showing easy fissility with remover process;
Cured resin composition layer formation process, the surface of the easy fissility of display of described fissility glass substrate is coated with hardening resin composition, forms uncured cured resin composition layer;
Lamination process, to there is the carrier substrate of the appearance and size less than the appearance and size of described uncured cured resin composition layer, to reserve the mode of the peripheral edge margin do not contacted with described carrier substrate in described uncured cured resin composition layer, be layered in described uncured cured resin composition layer, obtain solidifying front duplexer;
Curing process, makes the described uncured cured resin composition layer solidification before described solidification in duplexer, obtains having duplexer after the solidification of resin bed;
Cut off operation, the outer peripheral edge of the described carrier substrate after described solidification in duplexer, cuts off described resin bed and described fissility glass substrate;
Component formation process, described 2nd interarea of described fissility glass substrate forms use for electronic equipment component, obtains the duplexer of electronic device component; With
Separation circuit, is separated the electronic installation with described fissility glass substrate and described use for electronic equipment component from the duplexer of described electronic device component.
2. the manufacture method of electronic installation according to claim 1, wherein, after described lamination process and before described curing process, also possesses the bubble removal step of the deaeration process carrying out described uncured cured resin composition layer.
3. the manufacture method of electronic installation according to claim 1 and 2, wherein, described remover contains the compound with methyl silicane base or fluoro-alkyl.
4. the manufacture method of electronic installation according to claim 1 and 2, wherein, described remover contains silicone oil or fluorine based compound.
5. the manufacture method of electronic installation according to claim 1 and 2, wherein, described resin bed contains silicone resin.
6. the manufacture method of electronic installation according to claim 1 and 2, wherein, described resin bed is by having the olefinic organic based polysiloxane of thiazolinyl and having the solidfied material with the addition reaction-type silicone be combined to form of the organic hydrogen polysiloxanes of the hydrogen atom of silicon atom bonding.
7. the manufacture method of electronic installation according to claim 6, wherein, described organic hydrogen polysiloxanes be 0.5 ~ 2 with the mol ratio of the hydrogen atom of silicon atom bonding and the thiazolinyl of described olefinic organic based polysiloxane.
8. the manufacture method of electronic installation according to claim 1 and 2, wherein, described resin bed contains the organopolysiloxane of the non-curable of below 5 quality %.
9. the manufacture method of electronic installation according to claim 1 and 2, wherein, in described cut-out operation, support the interarea of the carrier substrate after described solidification in duplexer with microscope carrier, and make the periphery of described carrier substrate determine that block abuts with the position be arranged on described microscope carrier.
10. the manufacture method of electronic installation according to claim 1 and 2, wherein, in described cut-out operation, the surface of the fissility glass substrate after described solidification in duplexer forms line of cut, then along this line of cut, the fissility glass substrate in duplexer after described solidification and resin bed peripheral part separately are together cut off.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011225239A JP5790392B2 (en) | 2011-10-12 | 2011-10-12 | Manufacturing method of electronic device |
| JP2011-225239 | 2011-10-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103042803A CN103042803A (en) | 2013-04-17 |
| CN103042803B true CN103042803B (en) | 2016-01-20 |
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| CN201210387361.7A Expired - Fee Related CN103042803B (en) | 2011-10-12 | 2012-10-12 | The manufacture method of electronic installation |
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| JP (1) | JP5790392B2 (en) |
| KR (1) | KR20130039701A (en) |
| CN (1) | CN103042803B (en) |
| TW (1) | TW201332768A (en) |
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| WO2015157202A1 (en) | 2014-04-09 | 2015-10-15 | Corning Incorporated | Device modified substrate article and methods for making |
| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| WO2014061607A1 (en) * | 2012-10-19 | 2014-04-24 | 旭硝子株式会社 | Adhesive layer-equipped transparent surface material, display device, and production method therefor |
| US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
| US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
| US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
| JP6185812B2 (en) * | 2013-09-30 | 2017-08-23 | 三星ダイヤモンド工業株式会社 | Method and apparatus for breaking brittle material substrate |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| JP6136910B2 (en) * | 2013-12-17 | 2017-05-31 | 旭硝子株式会社 | Manufacturing method of glass laminate and manufacturing method of electronic device |
| KR102353030B1 (en) | 2014-01-27 | 2022-01-19 | 코닝 인코포레이티드 | Articles and methods for controlled bonding of thin sheets with carriers |
| CN105098088B (en) * | 2014-05-05 | 2017-06-06 | Tcl集团股份有限公司 | A kind of flexible display and its film encapsulation method |
| CN107000384B (en) * | 2014-11-21 | 2019-09-06 | Ａｇｃ株式会社 | Glass laminate and its manufacturing method, the manufacturing method of electronic device |
| KR102320640B1 (en) | 2015-04-29 | 2021-11-02 | 삼성디스플레이 주식회사 | Display apparatus and manufacturing method thereof |
| CN107635769B (en) | 2015-05-19 | 2020-09-15 | 康宁股份有限公司 | Article and method for bonding sheet to carrier |
| JP6479589B2 (en) * | 2015-06-22 | 2019-03-06 | デクセリアルズ株式会社 | Manufacturing method of image display device |
| EP3313799B1 (en) | 2015-06-26 | 2022-09-07 | Corning Incorporated | Methods and articles including a sheet and a carrier |
| TW201825623A (en) | 2016-08-30 | 2018-07-16 | 美商康寧公司 | Siloxane plasma polymers for sheet bonding |
| TWI821867B (en) | 2016-08-31 | 2023-11-11 | 美商康寧公司 | Articles of controllably bonded sheets and methods for making same |
| BR112020005850A2 (en) * | 2017-10-04 | 2020-09-29 | Saint-Gobain Glass France | composite glass plate having chamfered through hole |
| US11331692B2 (en) | 2017-12-15 | 2022-05-17 | Corning Incorporated | Methods for treating a substrate and method for making articles comprising bonded sheets |
| JP6958476B2 (en) * | 2018-05-11 | 2021-11-02 | 日本電気硝子株式会社 | Manufacturing method of glass laminate and manufacturing method of electronic device |
| KR102552270B1 (en) * | 2018-11-22 | 2023-07-07 | 삼성디스플레이 주식회사 | Peeling method for mother protective film and manufacturing method for the organic light emitting display apparatus |
| CN115167091B (en) * | 2022-08-05 | 2023-11-24 | 东莞华清光学科技有限公司 | Simple watch glass positioning and fixing method |
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| CN102004344A (en) * | 2009-08-26 | 2011-04-06 | 株式会社日立显示器 | Liquid crystal display device |
Also Published As
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| TW201332768A (en) | 2013-08-16 |
| JP5790392B2 (en) | 2015-10-07 |
| CN103042803A (en) | 2013-04-17 |
| KR20130039701A (en) | 2013-04-22 |
| JP2013082182A (en) | 2013-05-09 |
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