CN105128460A - Support substrate with resin layer and manufacturing method thereof, glass laminated body and manufacturing method of electronic device - Google Patents

Support substrate with resin layer and manufacturing method thereof, glass laminated body and manufacturing method of electronic device Download PDF

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Publication number
CN105128460A
CN105128460A CN201510290840.0A CN201510290840A CN105128460A CN 105128460 A CN105128460 A CN 105128460A CN 201510290840 A CN201510290840 A CN 201510290840A CN 105128460 A CN105128460 A CN 105128460A
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China
Prior art keywords
resin layer
supporting substrate
glass
silicone resin
glass substrate
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Granted
Application number
CN201510290840.0A
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CN105128460B (en
Inventor
松山祥孝
山内优
照井弘敏
内田大辅
日野有一
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AGC Inc
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Asahi Glass Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment

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  • Laminated Bodies (AREA)
  • Liquid Crystal (AREA)
  • Surface Treatment Of Glass (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

The present invention provides a support substrate with a resin layer and a manufacturing method thereof, a glass laminated body and a manufacturing method of an electronic device. The support substrate with the resin layer has the support substrate and the organic silicon resin layer arranged on one face of the support substrate. The support substrate with the resin layer is used on the organic silicon resin for stacking glass substrates for manufacturing the glass laminated body. A convex part is formed on the surface of the organic silicon resin layer for stacking the glass substrates, and a ratio H/W of a height H and a width of the convex part is less than 3*10<-5>.

Description

The manufacture method of the supporting substrate of tape tree lipid layer and manufacture method, glass laminate and electronic equipment
Technical field
The present invention relates to the manufacture method of the supporting substrate of tape tree lipid layer, glass laminate and electronic equipment.
Background technology
In recent years, electronic equipment (electronic installation) slimming just gradually, the lightweights such as solar cell (PV), liquid crystal panel (LCD), organic EL panel (OLED), the glass substrate used in these equipment is also carrying out thin plate.If the intensity of glass substrate is not enough due to thin plate, then in the manufacturing process of equipment, the treatability of glass substrate reduces.
Recently, in order to tackle the problems referred to above, propose following method: prepare glass laminate glass substrate and reinforcement plate are laminated, the glass substrate of glass laminate forms the electronic device members such as display unit, from glass substrate, reinforcement plate is separated (such as with reference to patent document 1) afterwards.Reinforcement plate has supporting substrate and is fixed on the silicone resin layer on this supporting substrate, and silicone resin layer and glass substrate are closely sealed in a releasable manner.In glass laminate, at the interface peel of silicone resin layer and glass substrate, the reinforcement plate that is separated from glass substrate can be stacked with new glass substrate, recycles as glass laminate.
Prior art document
Patent document
Patent document 1: No. 2007/018028th, International Publication
Summary of the invention
the problem that invention will solve
On the other hand, there will be a known at present and have the supporting substrate of coated film to be placed in the top of multiple supporting pin its surface configuration, carry out the method for heat drying.In addition, as the method for heat drying, known use is provided with the method for the heat treatment apparatus of heating plate.
When the present inventor etc. make reinforcement plate according to the method that patent document 1 is recorded, there is surface configuration the supporting substrate of the film becoming silicone resin layer by heating to be placed in be arranged on the top of the multiple supporting pins in heat treatment apparatus, film configures heating plate and carries out preliminary drying process, afterwards, dry process after implementing and form silicone resin layer.Its result, there is the situation of protuberance in the surface (hereinafter also referred to as " surface ") that there is the side of the laminated glass substrate at silicone resin layer.
In this case, make the surface of the 1st interarea towards silicone resin layer of glass substrate, laminated glass substrate on silicone resin layer and when manufacturing glass laminate, glass substrate deforms with the form of following the protuberance that the surface of silicone resin layer exists, thus occurs protuberance too at the 2nd interarea (face of the opposition side of silicone resin layer side) of glass substrate.
When the such glass laminate production example of known use is as electronic equipments such as liquid crystal panels, uneven to display in the location confirmation of protuberance sometimes.
The present invention forms in view of above problem, its object is to the supporting substrate that a kind of tape tree lipid layer is provided, it is the supporting substrate of the tape tree lipid layer with supporting substrate and silicone resin layer, produces display inequality in the electronic equipment that its glass laminate that can suppress to be used in laminated glass substrate on silicone resin layer and obtain is obtained.
In addition, the present invention also aims to provide a kind of glass laminate possessing the supporting substrate of above-mentioned tape tree lipid layer.
And then, the present invention also aims to provide a kind of manufacture method using the electronic equipment of above-mentioned glass laminate.
for the scheme of dealing with problems
The present inventor etc. concentrate on studies to reach above-mentioned purpose, found that, even if the surface of silicone resin layer exists protuberance, when the height of protuberance and width meet particular kind of relationship, also can suppress to show uneven generation, thus complete the present invention.
That is, the invention provides following (1) ~ (7).
(1) a kind of supporting substrate of tape tree lipid layer, its silicone resin layer of one side that there is supporting substrate and be arranged at supporting substrate, the supporting substrate of this tape tree lipid layer is used to laminated glass substrate on described silicone resin layer and manufactures glass laminate, wherein, be formed with protuberance on the surface of the side of the stacked described glass substrate of described silicone resin layer, the height H of described protuberance and the ratio H/W of width W are less than 3 × 10 -5.
(2) supporting substrate of the tape tree lipid layer according to above-mentioned (1), wherein, the height H of described protuberance is less than 0.10 μm.
(3) glass laminate, it possesses: the supporting substrate of above-mentioned (1) or the tape tree lipid layer described in (2) and the glass substrate be laminated on described silicone resin layer.
(4) glass laminate according to above-mentioned (3), wherein, described organic siliconresin is the reaction solidfied material of olefinic organic based polysiloxane and organic hydrogen polysiloxanes.
(5) glass laminate according to above-mentioned (3) or (4), wherein, by with the quality percentage of oxide benchmark, described glass substrate represents that the alkali-free glass containing following compositions is formed.
SiO 2：50～66％
Al 2O 3：10.5～24％
B 2O 3：0～12％
MgO：0～8％
CaO：0～14.5％
SrO：0～24％
BaO：0～13.5％
MgO+CaO+SrO+BaO：9～29.5％
ZrO 2：0～5％
(6) glass laminate according to above-mentioned (3) or (4), wherein, by with the quality percentage of oxide benchmark, described glass substrate represents that the alkali-free glass containing following compositions is formed.
SiO 2：58～66％
Al 2O 3：15～22％
B 2O 3：5～12％
MgO：0～8％
CaO：0～9％
SrO：3～12.5％
BaO：0～2％
MgO+CaO+SrO+BaO：9～18％
(7) manufacture method for electronic equipment, it possesses:
Component formation process, the surface of the glass laminate according to any one of above-mentioned (3) ~ (6) forms electronic device member, obtains the duplexer of having electronic equipment component; With
Separation circuit, peels off the supporting substrate of described tape tree lipid layer from the duplexer of described having electronic equipment component, obtains the electronic equipment with described glass substrate and described electronic device member.
(8) a kind of manufacture method of supporting substrate of tape tree lipid layer, the supporting substrate of described tape tree lipid layer has supporting substrate and is arranged at the silicone resin layer of one side of supporting substrate, it is used to laminated glass substrate on described silicone resin layer and manufactures glass laminate, and this manufacture method possesses following operation:
Curable silicone composition is coated on the operation on described supporting substrate,
In the chamber of regulation, preliminary drying process and rear baking process are carried out to the described supporting substrate being coated with described curable silicone composition, thus obtains the operation of silicone resin layer;
Described preliminary drying process has following operation: the operation heated described curable silicone composition, and carries out supply gas and the operation from described chamber indoor exhaust in described chamber,
By regulating quantity delivered and the capacity of described gas, suppressing the drop of solvent to the attachment of described silicone resin layer, making the ratio H/W of following H and W be less than 3 × 10 -5,
H: at the height of the protuberance that the surface of the side of the stacked described glass substrate of described silicone resin layer is formed,
W: at the width of the protuberance that the surface of the side of the stacked described glass substrate of described silicone resin layer is formed.
the effect of invention
According to the present invention, can provide the supporting substrate of the tape tree lipid layer with supporting substrate and silicone resin layer, it is uneven to there is display in the electronic equipment that the glass laminate that it can suppress to be used in laminated glass substrate on silicone resin layer and obtain makes.
In addition, the present invention can also provide the glass laminate of the supporting substrate possessing above-mentioned tape tree lipid layer.
And then the present invention can also provide the manufacture method of the electronic equipment using above-mentioned glass laminate.
[summary of the present invention]
First, based on Fig. 6 ~ Fig. 8, summary of the present invention is described.It should be noted that, the detailed content of each portion related to here and each process will describe later.
When the supporting substrate 14 of the band curability layer with curable silicone composition layer 12 is moved in heat treatment apparatus 30, first, first the supporting substrate 14 finishing other band curability layer heating (preliminary drying process) in same heat treatment apparatus 30 is taken out of via carrying-in/carrying-out mouth 42.
Now, if vaporized solvent is full of in heat treatment apparatus 30 with the form of steam because of heating, then this solvent vapour also can leak into outside from carrying-in/carrying-out mouth 42 sometimes.Leak into outside solvent vapour sometimes cool and with the form of drop 51 drippage, be attached on the surperficial 12a of the curable silicone composition layer 12 of the supporting substrate 14 of the band curability layer will moved in heat treatment apparatus 30.
Fig. 6 represents that drop is attached to the schematic cross sectional view of the supporting substrate of the band curability layer of the state of curable silicone composition layer.
By shown in Fig. 6, supporting substrate 14 that drop 51 is attached to the band curability layer of the state of the surperficial 12a of curable silicone composition layer 12 moves in heat treatment apparatus 30 and carries out heating (preliminary drying process), thereafter, it is taken out of in heat treatment apparatus 30 and carries out further heating (drying process afterwards), form silicone resin layer 16 thus, but in the process forming silicone resin layer 16, make concentration gradient become uniform effect to tell on, the solid constituent of curable silicone composition layer 12 is to diffusion in the drop 51 that there is not solid constituent.Therefore, formed at the position that the drop 51 of silicone resin layer 16 adheres to from the outstanding protuberance 61 (with reference to Fig. 7) of surperficial 16a.Protuberance 61 is parts of silicone resin layer 16.
Fig. 7 is the schematic cross sectional view of the supporting substrate 18 representing the tape tree lipid layer being formed with protuberance on the surface of silicone resin layer.
As shown in Figure 7, around protuberance 61, ditch portion 62 is formed with.This is because the volume of the silicone resin layer 16 around protuberance 61 decreases the solid constituent diffusion of curable silicone composition layer 12 and defines the amount of protuberance 61.
Fig. 8 is the schematic cross sectional view representing the glass laminate using the supporting substrate with the tape tree lipid layer of protuberance to be formed.
When on the surperficial 16a of silicone resin layer 16 with protuberance 61, laminated glass substrate 20 is to manufacture glass laminate 100, as shown in Figure 8, glass substrate 20 produces distortion with the shape of following protuberance 61, thus occurs protuberance 71 too on the 2nd interarea 20b of glass substrate 20.
When using such glass laminate 100 production example as electronic equipments such as liquid crystal panels, the position not easily transmitted light of protuberance 61 and protuberance 71, confirms display uneven (stain is uneven) sometimes.
Therefore, making the 2nd interarea 20b planarized by the protuberance 71 of glass substrate 20 being ground removing, display uneven (stain is uneven) can be suppressed.But, when the supporting substrate 18 of tape tree lipid layer being peeled off from such glass laminate 100, sometimes the power of recovery of shape is made to play a role in glass substrate 20, the position that protuberance 71 is polished becomes recess (not shown), and this part still can cause display uneven (white point is uneven).
But the discoveries such as the present inventor, even if there is protuberance 61 at the surperficial 16a of silicone resin layer 16, are less than 3 × 10 in the height H of protuberance 61 and the ratio H/W of width W -5when, also can not confirm display uneven.
It should be noted that, as shown in Figure 7, the height H (unit: μm) of protuberance 61 refer to the summit by protuberance 61 horizontal line (line (same below) in the direction, face of supporting substrate 10) and by the beeline between the horizontal line of the lowest part in ditch portion 62.
In addition, the width W (unit: μm) of protuberance 61 refers to the beeline between the vertical line (line in the direction vertical with the direction, face of supporting substrate 10) of the lowest part in the ditch portion 62 by clamping protuberance 61.
In addition, according to the polarisation etc. of liquid crystal, white point inequality may be observed to stain inequality or stain inequality is observed to white point inequality sometimes.
Below, the manufacture method of the manufacture method of the supporting substrate of tape tree lipid layer, the manufacture method of glass laminate and electronic equipment is described, in its declarative procedure, also the supporting substrate of tape tree lipid layer of the present invention and glass laminate of the present invention are described.
It should be noted that, below, in Fig. 2 ~ Fig. 5 in Fig. 1 ~ Fig. 5 mentioned in explanation, the diagram in the drop 51 be illustrated in omission Fig. 6 ~ Fig. 8, protuberance 61 and ditch portion 62 etc.
[supporting substrate of tape tree lipid layer and manufacture method thereof]
Fig. 1 is the flow chart of the manufacturing process in the manufacture method of the supporting substrate representing tape tree lipid layer.As shown in Figure 1, the manufacture method of the supporting substrate of tape tree lipid layer possesses painting process S102, moves into operation S104, the 1st heating process S106, takes out of operation S108 and the 2nd heating process S110.
Below the material used in each operation and step thereof are described in detail.First, painting process S102 is described in detail.
(manufacture method of the supporting substrate of tape tree lipid layer)
< painting process >
Painting process S102 is following operation: be coated on supporting substrate by the curable silicone composition containing curable silicone and solvent, supporting substrate is formed curable silicone composition layer, obtains the supporting substrate of the band curability layer possessing supporting substrate and curable silicone composition layer.By implementing this operation S102, as shown in (A) of Fig. 2, supporting substrate 10 forming curable silicone composition layer 12, obtaining the supporting substrate 14 being with curability layer.
Below, first, the material used in this operation S102 (supporting substrate, curable silicone composition) is described in detail, thereafter the step of this operation S102 is described in detail.
(supporting substrate)
Supporting substrate 10 has surface and 2, back side interarea, act synergistically with silicone resin layer 16 described later, support and strengthen glass substrate 20 described later, when manufacturing electronic device member in component formation process described later (manufacturing process of electronic device member), preventing the distortion, damage, breakage etc. of glass substrate 20.In addition, during the glass substrate using Thickness Ratio in the past thin, by making the glass laminate with glass substrate same thickness in the past, can use manufacturing technology, the manufacturing equipment of the glass substrate of the thickness be suitable in the past in component formation process, this is also one of object using supporting substrate 10.
As supporting substrate 10, such as, use metallic plate, the ceramic wafers etc. such as glass plate, plastic plate, SUS plate.When component formation process is with heat treatment, supporting substrate 10 is preferably formed by the material that the difference of the linear expansion coefficient with glass substrate 20 is little, is more preferably formed by the material identical with glass substrate 20.That is, preferred supporting substrate 10 is glass plate.Particularly preferably supporting substrate 10 is the glass plate formed by the glass material identical with glass substrate 20.
The thickness of supporting substrate 10 can be thicker than glass substrate 20, also can be thinner than glass substrate 20.Preferably, the thickness of supporting substrate 10 is selected according to the thickness of glass substrate 20, the thickness of silicone resin layer 16 and the thickness of glass laminate.Such as, be designed to process the substrate of thickness 0.5mm in current component formation process, and when the thickness sum of the thickness of glass substrate 20 and silicone resin layer 16 is 0.1mm, the thickness of supporting substrate 10 be set to 0.4mm.Under normal circumstances, the thickness of supporting substrate 10 is preferably 0.2 ~ 5.0mm.
When supporting substrate 10 is glass plate, for easily process, not easily the reason such as to crack, the thickness of glass plate is preferably more than 0.08mm.In addition, the reason of the rigidity do not cracked for expecting appropriateness flexure when peeling off after electronic device member is formed, the thickness of glass plate is preferably below 1.0mm.
Supporting substrate 10 is preferably 500 × 10 with the difference of the average coefficient of linear expansion of glass substrate 20 at 25 ~ 300 DEG C (hereinafter referred to as " average coefficient of linear expansion ") -7/ DEG C below, be more preferably 300 × 10 -7/ DEG C below, more preferably 200 × 10 -7/ DEG C below.If difference is excessive, then when the heating in component formation process cools, warpage or glass substrate 20 are peeled off with the supporting substrate 18 of tape tree lipid layer described later tempestuously may to cause glass laminate.When the material of glass substrate 20 is identical with the material of supporting substrate 10, can suppress to produce such problem.
(curable silicone composition)
Curable silicone composition is at least containing curable silicone and solvent.As described later, by being coated on supporting substrate 10 by this curable silicone composition, the curable silicone composition layer containing curable silicone can be obtained.
Below, material contained in said composition is described in detail.
Curable silicone is solidification and becomes compound or the composition of organic siliconresin.Such curable silicone is classified as condensation reaction type organosilicon, addition reaction-type organosilicon, ultraviolet hardening organosilicon and electron ray curing type organosilicon etc. according to its curing mechanism, any number ofly all can use.Wherein, preferred addition reaction-type organosilicon.This is because, curing reaction is easy, the degree of fissility during formation silicone resin layer is good, and heat resistance is also high.
Addition reaction-type organosilicon is the composition comprising host and crosslinking agent, the curability of solidifying occurs under the existence of the catalyst such as platinum group catalyst.The organosilyl solidification of addition reaction-type promotes by heating.Host in addition reaction-type organosilicon preferably has organopolysiloxane (the i.e. olefinic organic based polysiloxane of the thiazolinyl (vinyl etc.) being bonded to silicon atom.Wherein preferred straight-chain), thiazolinyls etc. become crosslinking points.Crosslinking agent in addition reaction-type organosilicon preferably has organopolysiloxane (the i.e. organic hydrogen polysiloxanes of the hydrogen atom (silicon hydrogen base) being bonded to silicon atom.Wherein preferred straight-chain), silicon hydrogen base etc. becomes crosslinking points.
Addition reaction-type organosilicon is carried out addition reaction by the crosslinking points of host and crosslinking agent and is solidified.It should be noted that, more excellent from the viewpoint of the heat resistance deriving from cross-linked structure, the hydrogen atom being bonded to silicon atom of preferred organic hydrogen polysiloxanes is 0.5 ~ 2 relative to the mol ratio of the thiazolinyl of olefinic organic based polysiloxane.
Solvent is comprised in curable silicone composition.Solvent preferably can easily make various component dissolves and the solvent removed that can easily volatilize.Specifically can illustrate such as: butyl acetate, heptane, 2-HEPTANONE, 1-methoxy-2-propanol acetic acid esters, toluene, dimethylbenzene, THF, chloroform etc.Wherein, preferred saturated hydrocarbons, can use by the one kind or two or more essence of various saturated hydrocarbons (straight-chain saturated hydrocarbons, branched saturated hydrocarbons, ester ring type saturated hydrocarbons) formed various saturated hydrocarbon solvent.Such as can enumerate: IsoparG (ExxonMobilCorporation manufacture), IsoparL (ExxonMobilCorporation manufacture), IsoparH (ExxonMobilCorporation manufacture), IsoparM (ExxonMobilCorporation manufacture), NORPAR13 (ExxonMobilCorporation manufacture), NORPAR15 (ExxonMobilCorporation manufacture), EXXSOLD40 (ExxonMobilCorporation manufacture), EXXSOLD60 (ExxonMobilCorporation manufacture), EXXSOLD80 (ExxonMobilCorporation manufacture), Neothiozol (centralized one-tenth Co., Ltd. manufactures), IPsolvent2028 (Idemitsu Kosen Co., Ltd.'s manufacture).
Wherein, as described later, from solvent the 1st heating process hold volatile in consider, preferably use initial boiling point (under atmospheric pressure) to be the solvent of less than 210 DEG C.
When curable silicone contained in curable silicone composition is addition reaction-type organosilicon, catalyst (especially platinum group metal series catalysts), reaction suppressor in curable silicone composition, can also be comprised further.
Platinum group metal series catalysts (silyl hydride platinum metal catalysts) is for making the silyl hydrideization of the thiazolinyl in above-mentioned olefinic organic based polysiloxane and the hydrogen atom in above-mentioned organic hydrogen polysiloxanes react the catalyst carrying out/promote.As platinum group metal series catalysts, the catalyst such as platinum group, palladium system, rhodium system can be listed, from the viewpoint of economy, reactive, particularly preferably use platinum group catalyst.
The so-called working life of the service time of above-mentioned catalyst (especially platinum group metal series catalysts) catalytic activity at normal temperatures, prolongation curable silicone composition reaction suppressor (silyl hydride reaction suppressor) suppress extend agent (also referred to as delayed-action activator).As reaction suppressor, such as, can list various organonitrogen compound, organic phosphorus compound, alkyne series compound, oxime compound, organochlorine compound etc.Especially alkyne series compound (the silicyl compound of such as alkynol class and alkynol) is suitably.
(step of operation)
The method that supporting substrate is coated with above-mentioned curable silicone composition is not particularly limited, known method can be adopted.Such as, as coating process, can list: spraying process, mould are coated with method, spin-coating method, Dipcoat method, rolling method, stick coating method, silk screen print method, gravure coating process etc.Suitably can select from these methods according to the kind of curable silicone composition.
It should be noted that, the thickness of curable silicone composition layer is not particularly limited, suitably adjust in the mode that can obtain the silicone resin layer with suitable depth described later.
< moves into operation >
Moving into operation S104 is following operation: the supporting substrate of loading belt curability layer in heat treatment apparatus, the supporting substrate of mounting band curability layer on the supporting pin in heat treatment apparatus.By implementing this operation, as shown in Figure 3, be with the supporting substrate 14 of curability layer by the top (top) of supporting pin 34 that is positioned in heat treatment apparatus 30.It should be noted that, the back side (there is the face of the opposition side of curable silicone composition layer side) of the supporting substrate 10 in the supporting substrate 14 of supporting pin 34 support belt curability layer.
Below, first the heat treatment apparatus 30 used in this operation is described in detail.
Fig. 3 is the constructed profile of the example representing heat treatment apparatus 30.Heat treatment apparatus 30 is the devices for implementing the heating in the 1st heating process S106 described later, is so-called predrying device.
Heat treatment apparatus 30 possess in heated chamber 32 supporting substrate 14 for support belt curability layer supporting pin 34, for supported pin 34 brace table 36 and be configured in the heating plate 38 of tabular on top of supporting substrate 14 of band curability layer.
Merely illustrate 2 supporting pins 34 in Fig. 3, but its radical is not particularly limited.
In addition, the solvent etc. be provided with the blast pipe 40 be connected with exhaust means (not shown) on the top of heat treatment apparatus 30, never illustrated gas supply port is supplied to air in heat treatment apparatus 30, volatilizing from curable silicone composition layer 12 is discharged from blast pipe 40.And then, the carrying-in/carrying-out mouth 42 for supporting substrate 14 carrying-in/carrying-out by band curability layer is provided with in the side of heat treatment apparatus 30.
As the step of this operation S104, via carrying-in/carrying-out mouth 42, the supporting substrate 14 of band curability layer is moved in heat treatment apparatus 30, the supporting substrate 14 of band curability layer is positioned on supporting pin 34.
And, when as described above the supporting substrate 14 of band curability layer being moved in heat treatment apparatus 30, first, the supporting substrate 14 of other band curability the layer first heating (preliminary drying process) in same heat treatment apparatus 30 finished takes out of via carrying-in/carrying-out mouth 42.
Now, if vaporized solvent is full of in heat treatment apparatus 30 with the form of steam because of heating, then this solvent vapour also can leak into outside from carrying-in/carrying-out mouth 42 sometimes.Leak into outside solvent vapour sometimes cool and with the form of drop 51 drippage, be attached to (with reference to Fig. 6) on the surperficial 12a of the curable silicone composition layer 12 of the supporting substrate 14 of the band curability layer will moved in heat treatment apparatus 30.
< the 1st heating process >
1st heating process S106 is following operation: at the curable silicone composition layer top configuration heating plate of the supporting substrate of band curability layer, while be exhausted, while heat the supporting substrate of band curability layer below the 1st temperature, remove the solvent remained in curable silicone composition layer.This operation S106 is so-called preliminary drying operation, by implementing this operation S106, can remove the removal of solvents remained in curable silicone composition layer and also passes through with the heating temperatures be applicable to and make curable silicone composition surface smoothing.After enforcement preliminary drying like this process, after implementing in the 2nd heating process S110 described later, dry process, remove solvent residual in the silicone resin layer formed further thus, thus surperficial planar becomes more smooth, improves further with the adaptation of glass substrate.
In this operation S106, as shown in Figure 3, at the top configuration heating plate 38 of the supporting substrate 14 of band curability layer, implement to heat.It should be noted that, as shown in Figure 3, heating plate 38 is relative with curable silicone composition layer 12.
The distance of heating plate 38 and curable silicone composition layer 12 is not particularly limited, effectively removes solvent from the viewpoint of self-curing silicone composition strata 12, suppress the decomposition of curable silicone, preferably 30 ~ 120mm, more preferably 60 ~ 90mm.
As the condition of the heating of this operation S106, kind according to used solvent, curable silicone suitably selects optimal conditions, surface that is more excellent from the viewpoint of the removal of solvent, curable silicone composition layer flattens smooth and further to suppress the decomposition of curable silicone, and the 1st temperature is preferably in the scope of the initial boiling point+30 DEG C of initial boiling point-30 DEG C ~ solvent of solvent.In other words, the 1st temperature X preferably meets following relational expression.
Formula: the initial boiling point+30 DEG C of initial boiling point-30 DEG C≤temperature X≤solvent of solvent
It should be noted that, the initial boiling point of solvent refers to the value measured according to JISK0066 (1992).
And then, as the 1st temperature in this operation S106, the decomposition that is smooth and suppression curable silicone further that flattens from the viewpoint of the surface of curable silicone composition layer, be preferably less than 210 DEG C.Wherein, from the viewpoint of the cohesional failure of silicone resin layer can be suppressed further, be preferably 150 ~ 210 DEG C, be more preferably 180 ~ 205 DEG C.
Be not particularly limited the heat time, the kind according to used solvent, curable silicone suitably selects optimal conditions, from the viewpoint of the removal of residual solvent and productivity ratio, be preferably 1 ~ 5 minute, be more preferably 2 ~ 3 minutes.
In this operation S106, limit is implemented exhaust limit and is heated.As shown in Figure 3, in heat treatment apparatus 30, being provided with blast pipe 40, when heating, being exhausted with this blast pipe 40.Capacity is not particularly limited, more effectively carries out from the viewpoint of the removal of solvent, be preferably more than 1500L/min, be more preferably more than 1800L/min.The upper limit is not particularly limited, from the viewpoint of performance and the economy of device, is preferably below 3000L/min, is more preferably below 2500L/min.
When implementing this operation S106, can from not shown gas supply port supply gas.By supply gas, the solvent flashing in heated chamber 32 effectively can be removed.The kind of supplied gas is not particularly limited, the non-active gas such as air, nitrogen etc. can be listed.The gas supplied also can be add hot-air.
The quantity delivered of gas is not particularly limited, more effectively carries out from the viewpoint of the removal of solvent, be preferably more than 1500L/min, be more preferably more than 1800L/min.The upper limit is not particularly limited, from the viewpoint of the performance of device and economy, be preferably below 3000L/min, be more preferably below 2500L/min.
In addition, as supplied gas, the aspect more excellent from the removal of the residual solvent curable silicone composition layer is considered, preferably adds hot-air.The temperature adding hot-air is not particularly limited, from the viewpoint of the surface smoothness of the removal of solvent and curable silicone composition layer, be preferably 100 ~ 150 DEG C.
In the manufacture of the supporting substrate of tape tree lipid layer of the present invention, by adjust gas quantity delivered and capacity suppresses the attachment of drop to silicone resin layer of solvent, make the height H of protuberance described later be less than 3 × 10 with the ratio H/W of width W -5.
< takes out of operation >
Taking out of operation S108 is the operation taken out of by the supporting substrate of band curability layer from heat treatment apparatus.
In this operation S108, via the carrying-in/carrying-out mouth 42 of heat treatment apparatus 30, the supporting substrate 14 of band curability layer is taken out of in heat treatment apparatus 30.That is, open carrying-in/carrying-out mouth 42, in heat treatment apparatus 30, reclaim the supporting substrate 14 of band curability layer.
< the 2nd heating process >
2nd heating process S110 is following operation: heat the above-mentioned supporting substrate taking out of the band curability layer reclaimed in operation S108 with the 2nd temperature higher than above-mentioned 1st temperature, obtain silicone resin layer.This operation S110 is so-called rear baking process, and the solvent removed further in curable silicone composition layer by implementing this operation S110, thus the organosilyl solidification of being cured property, obtain silicone resin layer.By implementing this operation, obtain the supporting substrate 18 possessing the tape tree lipid layer of supporting substrate 10 and silicone resin layer 16 as shown in (B) of Fig. 2.
The method of the heating in this operation S110 is not particularly limited, can the known heaters such as baking oven be used.
The heating of this operation S110 is implemented at the temperature higher than the 1st temperature of above-mentioned 1st heating process S106.The difference of the 1st temperature and the 2nd temperature is not particularly limited, kind according to used curable silicone, solvent suitably selects optimal conditions, from the viewpoint of the cohesional failure suppressing further silicone resin layer, preferably 10 ~ 100 DEG C, be more preferably 30 ~ 70 DEG C.
Wherein, as the 2nd temperature, preferably greater than 210 DEG C.Solvent is removed and the more excellent aspect of curing reaction is considered, preferably greater than 210 DEG C and be less than 250 DEG C from self-curing silicone composition strata 12.Heat time suitably selects optimal conditions according to used material, from the viewpoint of the removal of productivity ratio and solvent, be preferably 10 ~ 120 minutes, be more preferably 20 ~ 60 minutes.
(supporting substrate of tape tree lipid layer)
By via above-mentioned operation, obtain the supporting substrate 18 of the tape tree lipid layer possessing supporting substrate 10 and be fixed on the silicone resin layer 16 on supporting substrate 10.
The supporting substrate 18 of this tape tree lipid layer is for laminated glass substrate 20 and manufacture glass laminate 100 on silicone resin layer 16 as illustrated in fig. 4.
Silicone resin layer 16 in the supporting substrate 18 of tape tree lipid layer passes through on supporting substrate 10, implement the curing reaction of curable silicone composition layer 12 and be fixed in the one side of supporting substrate 10, and strippingly closely sealed with glass substrate 20 described later.Silicone resin layer 16, for preventing the position offset straight of glass substrate 20 to the operation carrying out glass substrate 20 to be separated with supporting substrate 10 and easily being peeled off from glass substrate 20 by lock out operation, prevents glass substrate 20 grade damaged because of lock out operation.In addition, silicone resin layer 16 is fixed in supporting substrate 10, and in lock out operation, the supporting substrate 18 of tape tree lipid layer is not peeled off, obtained by lock out operation to silicone resin layer 16 and supporting substrate 10.
The surface contacted with glass substrate 20 of silicone resin layer 16 is strippingly closely sealed with the 1st interarea of glass substrate 20.In the present invention, the character that can easily peel off on this silicone resin layer 16 surface is called easy fissility (fissility).
In the present invention, above-mentioned fixing and above-mentionedly strippablely closely sealedly to there are differences in peel strength (namely peeling off required stress), fixing peel strength is than greatly closely sealed.In addition, strippablely closely sealedly also to refer to, can peel off, not make the face fixed peel off with being peeling simultaneously.Specifically refer to, in glass laminate of the present invention, when carrying out the operation be separated with supporting substrate 10 by glass substrate 20, peel off in closely sealed face and do not peel off in fixing face.Therefore, when carrying out operation glass laminate being separated into glass substrate 20 and supporting substrate 10, glass laminate is separated into this 2 part of supporting substrate 18 of glass substrate 20 and tape tree lipid layer.
That is, the adhesion on the surface of silicone resin layer 16 pairs of supporting substrates 10 is relatively higher than the adhesion of the 1st interarea of silicone resin layer 16 pairs of glass substrates 20.
The thickness of silicone resin layer 16 is not particularly limited, is preferably 2 ~ 100 μm, is more preferably 3 ~ 50 μm, more preferably 7 ~ 20 μm.When the thickness of silicone resin layer 16 is such scope, even if there is bubble, foreign matter between silicone resin layer 16 and glass substrate 20, glass substrate 20 also can be suppressed to produce deformation defect.In addition, when the thickness of silicone resin layer 16 is blocked up, is formed and need time and materials, thus uneconomical, and also heat resistance reduces sometimes.In addition, when the thickness of silicone resin layer 16 is crossed thin, silicone resin layer 16 reduces with the adaptation of glass substrate 20 sometimes.
Then, via the 1st heating process S106, to take out of in the supporting substrate 18 of the tape tree lipid layer that operation S108 and the 2nd heating process S110 obtains moving in operation S104 the state (with reference to Fig. 6) being attached with drop 51, as mentioned above, sometimes protuberance 61 (with reference to Fig. 7) is formed with at the surperficial 16a of silicone resin layer 16.
But in the present invention, the ratio H/W of the height H of protuberance 61 (unit: μm) and width W (unit: μm) is less than 3 × 10 -5.By making the ratio H/W of protuberance 61 meet this scope, even if thus there is protuberance 61, also can suppress to show uneven generation.
Such as, even if the height of protuberance 61 is comparatively large, at the width also had to a certain degree and ratio H/W meets above-mentioned scope time, also can suppress to show uneven generation.
As long as the ratio H/W of the height H of protuberance 61 and width W meets above-mentioned scope and is just not particularly limited.
And then the height H of protuberance 61 is preferably less than 0.10 μm, is more preferably less than 0.05 μm.Height H is not when this scope, and the lamellar spacing (cellgap) of LCD narrows, and easily produces display inequality, and time within the scope of this, can suppress further to show uneven generation.
On the other hand, the width W of protuberance 61 is preferably 3 × 10 3below μm, be more preferably 1 × 10 3below μm.Width W is not when this scope, and the scope that the lamellar spacing of LCD narrows becomes large, and easily generation display is uneven, and time within the scope of this, can suppress further to show uneven generation.
It should be noted that, the number of protuberance 61 is preferably less than 20 in the scope of 1300mm × 1100mm, is more preferably less than 15, more preferably less than 10.
[glass laminate and manufacture method thereof]
(manufacture method of glass laminate)
As mentioned above, the supporting substrate of the tape tree lipid layer obtained via above-mentioned operation manufactures glass laminate for laminated glass substrate on silicone resin layer.
The method manufacturing this glass laminate is not particularly limited, the lamination process be preferably implemented as follows: laminated glass substrate on the silicone resin layer in the supporting substrate of tape tree lipid layer, is had the glass laminate of supporting substrate, silicone resin layer and glass substrate successively.
Below, the step of lamination process is described in detail.
< lamination process >
Lamination process is following operation: laminated glass substrate 20 on the surface of the silicone resin layer 16 in the supporting substrate 18 of tape tree lipid layer, is possessed the glass laminate 100 of supporting substrate 10, silicone resin layer 16 and glass substrate 20 successively.More specifically, as shown in Figure 4, using silicone resin layer 16 with the surperficial 16a of the opposition side of supporting substrate 10 side and there is the 1st interarea 20a and the 2nd interarea 20b the 1st interarea 20a of glass substrate 20 as lamination surface, by silicone resin layer 16 and glass substrate 20 stacked, obtain glass laminate 100.
For used glass substrate 20, be described in detail later.
It should be noted that, when on the silicone resin layer 16 with protuberance 61, laminated glass substrate 20 manufactures glass laminate 100 as mentioned above, glass substrate 20 deforms with the shape of following protuberance 61, occurs protuberance 71 (with reference to Fig. 8) too at the 2nd interarea 20b of glass substrate 20.When using such glass laminate 100 to make liquid crystal panel etc., sometimes confirm display uneven, but in the present invention, be less than 3 × 10 by making the ratio H/W of protuberance 61 -5, display can be suppressed uneven.
The method be layered on silicone resin layer 16 by glass substrate 20 is not particularly limited, known method can be adopted.
Such as can list the method for overlapping glass substrate 20 on the surface of silicone resin layer 16 under atmospheric pressure environment.It should be noted that, after overlapping glass substrate 20, roller can be used, make by press glass substrate 20 be crimped on silicone resin layer 16 on the surface of silicone resin layer 16 as required.By the crimping utilizing roller or undertaken by press, remove the bubble be mixed between silicone resin layer 16 and glass substrate 20, so preferably than being easier to.
When utilizing vacuum layer platen press, Vacuum Pressure method for making silicone resin layer 16 and glass substrate 20 to be crimped, bubble can be suppressed to be mixed into, guarantee good closely sealed, thus more preferably.By crimping under vacuo, even if residual small bubble, bubble also can not be grown up because of heating, also has the advantage of the deformation defect not easily causing glass substrate 20.
During laminated glass substrate 20, preferably the surface of the glass substrate 20 contacted with silicone resin layer 16 is fully cleaned, carry out under the environment that cleanliness factor is high stacked.Cleanliness factor is higher, and the flatness of glass substrate 20 is better, thus preferably.
It should be noted that, after laminated glass substrate 20, as required, also can carry out pre-anneal treatment (heating).By carrying out this pre-anneal treatment, the adaptation of stacked glass substrate 20 pairs of silicone resin layers 16 improves, can obtain suitable peel strength, not easily produce the position skew etc. of electronic device member when component formation process described later, the productivity ratio of electronic equipment improves.
The condition of pre-anneal treatment can be suitable for selecting optimum condition according to the kind of used silicone resin layer 16, more suitable from the viewpoint of the peel strength made between glass substrate 20 and silicone resin layer 16, preferably, the heating of more than 5 minutes (being preferably 5 ~ 30 minutes) is carried out under the condition (being preferably 300 ~ 400 DEG C) more than 300 DEG C.
(glass substrate)
1st interarea 20a of glass substrate 20 connects with silicone resin layer 16, the 2nd interarea 20b of the opposition side of silicone resin layer 16 side is provided with electronic device member.
The kind of glass substrate 20 can be general glass substrate, such as, can enumerate the glass substrate etc. of the display unit of LCD, OLED and so on.The chemical proofing of glass substrate 20, resistance to excellent moisture permeability, and percent thermal shrinkage is low.As the index of percent thermal shrinkage, the linear expansion coefficient of JISR3102 (nineteen ninety-five revision) defined can be used.
When the linear expansion coefficient of glass substrate 20 is large, because component formation process described later understands heat tracing process mostly, therefore, easily various unfavorable condition is produced.Such as, when glass substrate 20 is formed thin film transistor (TFT) (TFT), if cool the glass substrate 20 defining TFT under heating, then exist and cause the position of TFT to offset excessive worry because of the thermal contraction of glass substrate 20.
Glass substrate 20 is by being shaped to frit melting tabular by melten glass and obtaining.Such forming method can be general forming method, such as, draws method (slotdowndrawprocess), Fourcault's method (fourcaultprocess), Lu Baifa (Lubbersprocess) etc. under can using float glass process, fusion method, discharge orifice.In addition, particularly the glass substrate 20 of thinner thickness can (horizontal sheet process) carry out shaping and obtain by the following method: by being temporarily shaped to the glass heats of tabular to plastic temperature, being stretched and make it thinning by means such as stretchings to it.
Be not particularly limited the kind of the glass of glass substrate 20, preferred alkali-free pyrex, pyrex, soda-lime glass, high silica glass, other take silica as the oxide based glass of main component.As oxide based glass, the content being preferably scaled silica during oxide is the glass of 40 quality % ~ 90 quality %.
As the glass of glass substrate 20, adopt and be applicable to the kind of electronic device member, the glass of its manufacturing process.Such as, because the stripping of alkali metal component easily has an impact to liquid crystal, therefore, glass substrate of liquid crystal panel forms (but, usually containing alkaline earth metal component) by the glass (alkali-free glass) of alkali-free metal ingredient in fact.So, the glass of glass substrate 20 suitably can be selected according to the kind of applied equipment and manufacturing process thereof.
From slimming and/or the consideration of light-weighted viewpoint of glass substrate 20, the thickness of glass substrate 20 is preferably below 0.3mm, is more preferably below 0.15mm, more preferably below 0.10mm.When for below 0.3mm, the flexibility that glass substrate 20 is good can be given.When for below 0.15mm, glass substrate 20 can be rolled into web-like.
In addition, for easily manufacturing the reasons such as glass substrate 20, easily process glass substrate 20, the thickness of glass substrate 20 is preferably more than 0.03mm.
It should be noted that, glass substrate 20 also can be formed more than two-layer, and in this situation, the material forming each layer can be same material, also can be different materials.In addition, in this situation, " thickness of glass substrate 20 " refers to the gross thickness of all layers.
As the composition of glass, following composition can be used.That is, represent with the quality percentage of oxide benchmark, preferably containing SiO 2: 50 ~ 66%, Al 2o 3: 10.5 ~ 24%, B 2o 3: 0 ~ 12%, MgO:0 ~ 8%, CaO:0 ~ 14.5%, SrO:0 ~ 24%, BaO:0 ~ 13.5%, MgO+CaO+SrO+BaO:9 ~ 29.5%, ZrO 2: the alkali-free glass of 0 ~ 5%.
In addition, represent with the quality percentage of oxide benchmark, also preferably containing SiO 2: 58 ~ 66%, Al 2o 3: 15 ~ 22%, B 2o 3: 5 ~ 12%, MgO:0 ~ 8%, CaO:0 ~ 9%, SrO:3 ~ 12.5%, BaO:0 ~ 2%, MgO+CaO+SrO+BaO:9 ~ 18%, ZrO 2: the alkali-free glass of 0 ~ 5%.
In addition, represent with the quality percentage of oxide benchmark, also preferably containing SiO 2: 50 ~ 61.5%, Al 2o 3: 10.5 ~ 18%, B 2o 3: 7 ~ 10%, MgO:2 ~ 5%, CaO:0 ~ 14.5%, SrO:0 ~ 24%, BaO:0 ~ 13.5%, MgO+CaO+SrO+BaO:16 ~ 29.5%, ZrO 2: the alkali-free glass of 0 ~ 5%.
< lamination process >
It should be noted that, the manufacture method of glass laminate can also possess grinding step.Grinding step is the operation of grinding the 2nd interarea 20b of the glass substrate 20 in the glass laminate 100 obtained in lamination process, thereby, it is possible to the protuberance 71 of the glass substrate 20 will followed the protuberance 61 of silicone resin layer 16 and occur is removed.
The method of grinding is not particularly limited, known method can be adopted, mechanical lapping (physical grinding) or chemical grinding can be used.As mechanical lapping, can make with the following method: blow ceramic abrasive grain carry out grinding blasting method, use the grinding of abrasive sheet, grinding stone, combinationally use cmp (CMP:ChemicalMechanicalPolishing) method etc. of abrasive particle and chemical solvent.
In addition, as chemical grinding (also claiming wet etching), the method using the surface of chemical solution to glass substrate to grind can be utilized.
(glass laminate)
Glass laminate 100 is the duplexers having supporting substrate 10, glass substrate 20 and be present in the silicone resin layer 16 between them.The one side of silicone resin layer 16 connects with supporting substrate 10 and another side connects with the 1st interarea 20a of glass substrate 20.
Use this glass laminate 100 until component formation process described later.That is, this glass laminate 100 is used until form the electronic device members such as liquid crystal indicator on the surface at the 2nd interarea 20b of its glass substrate 20.Afterwards, the glass laminate defining electronic device member is separated into supporting substrate 18 and the electronic equipment of tape tree lipid layer, and the supporting substrate 18 of tape tree lipid layer does not become the part forming electronic equipment.Can on the supporting substrate 18 of tape tree lipid layer stacked new glass substrate 20, form new glass laminate 100 and again utilize.
Supporting substrate 10 has peel strength (x) with the interface of silicone resin layer 16, when supporting substrate 10 is applied above the stress of the direction of delaminate of peel strength (x) with the interface of silicone resin layer 16, be peeling at the interface of supporting substrate 10 with silicone resin layer 16.Silicone resin layer 16 has peel strength (y) with the interface of glass substrate 20, when silicone resin layer 16 is applied above the stress of the direction of delaminate of peel strength (y) with the interface of glass substrate 20, be peeling at the interface of silicone resin layer 16 with glass substrate 20.
As mentioned above, in glass laminate 100 (also referring to the duplexer of having electronic equipment component described later), above-mentioned peel strength (x) is than above-mentioned peel strength (y) large (height).Therefore, if apply the stress in the direction making supporting substrate 10 and glass substrate 20 peel off to glass laminate 100, then glass laminate 100 of the present invention is separated into the supporting substrate 18 of glass substrate 20 and tape tree lipid layer at silicone resin layer 16 and the interface peel of glass substrate 20.
That is, silicone resin layer 16 to be fixedly supported on substrate 10 and to form the supporting substrate 18 of tape tree lipid layer, and glass substrate 20 is strippingly closely sealed on silicone resin layer 16.
Peel strength (x) is preferably enough high compared with peel strength (y).Improve peel strength (x) and refer to the adhesive force improving silicone resin layer 16 pairs of supporting substrates 10, and adhesive force relatively high compared with the adhesive force to glass substrate 20 can be maintained after a heating treatment.
The raising of the adhesive force of silicone resin layer 16 pairs of supporting substrates 10 is described above, is cross-linked solidify to form silicone resin layer 16 and reach by making curable silicone composition layer 12 on supporting substrate 10.By bonding force during crosslinking curing, the silicone resin layer 16 be combined with supporting substrate 10 with high-bond can be formed.
On the other hand, the solidfied material of curable silicone composition layer 12 is usually low than the adhesion produced during above-mentioned crosslinking curing to the adhesion of glass substrate 20.
Glass laminate 100 may be used for various uses, such as, can enumerate the purposes etc. being formed with the electronic units such as the semiconductor crystal wafer of circuit for the manufacture of display unit panel described later, PV, thin-film secondary battery, surface.It should be noted that, in this purposes, glass laminate 100 is often exposed on hot conditions (such as more than 360 DEG C) (such as more than 1 hour).
Here, display unit panel comprises: LCD, OLED, Electronic Paper, plasma display, field emission panels, quantum dot LED panel, MEMS (microelectromechanical systems, MicroElectroMechanicalSystems) shutter face plate etc.
[electronic equipment (glass substrate of band member) and manufacture method thereof]
Above-mentioned glass laminate manufacture is used to comprise the electronic equipment of glass substrate and electronic device member (glass substrate of band member).
The manufacture method of this electronic equipment is not particularly limited, from the viewpoint of the productivity ratio excellence of electronic equipment, be preferably as follows method: the glass substrate in above-mentioned glass laminate forms electronic device member, the duplexer of fabricated ribbon electronic device member, with the interface, glass substrate side of silicone resin layer for release surface, be separated into the supporting substrate of electronic equipment and tape tree lipid layer by the duplexer of the having electronic equipment component obtained.
Below, glass substrate in above-mentioned glass laminate will be formed electronic device member and the operation of the duplexer of fabricated ribbon electronic device member is called component formation process, by with the interface, glass substrate side of silicone resin layer for release surface, the operation being separated into the supporting substrate of electronic equipment and tape tree lipid layer by the duplexer of having electronic equipment component is called separation circuit.
Below, the material used in each operation and step are described in detail.
(component formation process)
Component formation process is the operation glass substrate 20 in the glass laminate 100 obtained in above-mentioned lamination process being formed electronic device member.More specifically, as shown in (A) of Fig. 5, at the 2nd interarea 20b (exposing surface) the upper formation electronic device member 22 of glass substrate 20, obtain the duplexer 24 of having electronic equipment component.
First, the electronic device member 22 used in this operation is described in detail, thereafter the step of operation is described in detail.
< electronic device member (functional element) >
Electronic device member 22 is formed on the glass substrate 20 in glass laminate 100, is the component at least partially forming electronic equipment.More specifically, as electronic device member 22, display unit panel, solar cell, thin-film secondary battery or surface can be enumerated and be formed with the middle components (such as display device component, component used for solar batteries, thin-film secondary battery component, electronic component-use circuit) used such as the electronic units such as the semiconductor crystal wafer of circuit.
Such as, as component used for solar batteries, for silicon type, the transparency electrodes such as the tin oxide of positive pole, metal etc. with the silicon layer that p layer/i layer/n layer represents and negative pole can be enumerated, the various components etc. corresponding with compound type, dye sensitization type, quantum point type etc. can be enumerated in addition.
In addition, as thin-film secondary battery component, for type lithium ion, transparency electrode, the lithium compound of dielectric substrate, the metal of current collection layer, the resin etc. as encapsulated layer such as metal or metal oxide of positive pole and negative pole can be enumerated, the various components etc. corresponding with ni-mh type, polymer-type, ceramic electrolyte type etc. can be enumerated in addition.
In addition, as electronic component-use circuit, CCD, CMOS can enumerate the metal of conductive part, the silica, silicon nitride etc. of insulation division, can enumerate the various components etc. corresponding with various sensor, rigidity printed base plate, flexible printing substrate, rigid and flexibility printed base plates etc. such as pressure sensor/acceleration transducers in addition.
The step > of < operation
The manufacture method of the duplexer 24 of above-mentioned having electronic equipment component is not particularly limited, can, according to the kind of the member of formation of electronic device member, existing known method be utilized to form electronic device member 22 on the 2nd interarea 20b of the glass substrate 20 of glass laminate 100.
It should be noted that, electronic device member 22 may not be the whole (following of the component of the 2nd interarea 20b being finally formed in glass substrate 20, be called " all components "), but a part for all components (hereinafter referred to as " partial component ").Also can by peel off from silicone resin layer 16, the glass substrate of band portion component makes and is with the glass substrate of all components (suitable with electronic equipment described later) in operation afterwards.
In addition, for peel off from silicone resin layer 16, glass substrate with all components, also can form other electronic device members at its release surface (the 1st interarea 20a).In addition, after also the duplexer of all components of band can being assembled, the duplexer of the supporting substrate 18 of tape tree lipid layer from all components of band is peeled off, manufactures electronic equipment.And then, after also can using the duplexer assembling electronic equipment of two all components of band, the duplexer of the supporting substrate 18 of two tape tree lipid layer from all components of band is peeled off, manufactures the electronic equipment with two pieces of glass substrates.
Such as, to manufacture the situation of OLED, in order to the glass substrate 20 in glass laminate 100 with the surface of silicone resin layer 16 side opposite side (be equivalent to the 2nd interarea 20b of glass substrate 20) form organic EL structure, carry out that following various layer is formed, process: form transparency electrode; And then on the face being formed with transparency electrode evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer etc.; Form backplate; Package board is used to encapsulate etc.Formed as these layers, process, specifically, such as, can enumerate the bonding process etc. of film forming process, vapor deposition treatment, package board.
In addition, such as, when manufacturing TFT-LCD, its manufacture method has as inferior various operation: TFT formation process, on the 2nd interarea 20b of the glass substrate 20 of glass laminate 100, anti-corrosion liquid is used on the metal film utilizing the common membrane formation process such as CVD and sputtering method to be formed and metal oxide film etc., to form pattern thus form thin film transistor (TFT) (TFT); CF formation process, on the 2nd interarea 20b of the glass substrate 20 of another glass laminate 100, uses anti-corrosion liquid form pattern and form colour filter (CF); Bonding process, by the duplexer of the band TFT obtained in TFT formation process and the duplexer of band CF that obtains in CF formation process stacked.
In TFT formation process, CF formation process, adopt known photoetching technique, etching technique etc., form TFT, CF at the 2nd interarea 20b of glass substrate 20.At this moment, use anti-corrosion liquid as pattern formation coating fluid.
It should be noted that, before formation TFT, CF, also can clean the 2nd interarea 20b of glass substrate 20 as required.As cleaning method, known dry method cleaning, wet-cleaning can be used.
In bonding process, make the thin film transistor (TFT) forming surface of the duplexer of band TFT relative with the colour filter forming surface of the duplexer of band CF, use sealant (such as unit (cell) formation ultraviolet hardening sealant) to fit.Afterwards, in the unit formed by the duplexer of band TFT and the duplexer of band CF, liquid crystal material is injected.As the method injecting liquid crystal material, such as, there is decompression injection method, drip injection method.
(separation circuit)
Separation circuit is following operation: as shown in Fig. 5 (B), with the interface of silicone resin layer 16 and glass substrate 20 for release surface, be separated into by the duplexer 24 of the having electronic equipment component obtained in above-mentioned component formation process and be laminated with the glass substrate 20 (electronic equipment 26) of electronic device member 22 and the supporting substrate 18 of tape tree lipid layer, obtain the electronic equipment 26 comprising electronic device member 22 and glass substrate 20.
When the part of all member of formation of the electronic device member 22 on the glass substrate 20 when peeling off needed for formation, also can after isolation remaining member of formation be formed on glass substrate 20.
The method peeled off by the supporting substrate 18 of glass substrate 20 and tape tree lipid layer is not particularly limited.Specifically, such as can insert sharp cutter shape object at glass substrate 20 with the interface of silicone resin layer 16 and form the starting point of stripping, afterwards, then blow water and compressed-air actuated fluid-mixing, thus peel off.Preferably, with the supporting substrate 10 of the duplexer 24 of having electronic equipment component be upside, electronic device member 22 side is downside mode is arranged on platform, make electronic device member 22 side vacuum suction on platform (when two faces are laminated with supporting substrate, carry out successively), in this condition, cutter is first made to invade glass substrate 20-silicone resin layer 16 interface.Afterwards, utilize multiple vacuum cup adsorbent support substrate 10 side, and near the position inserting cutter, make vacuum cup increase successively.Thus, form air layer in silicone resin layer 16 and the interface of glass substrate 20, the cohesional failure face of silicone resin layer 16, this air layer to interface, the expansion of whole of cohesional failure face, can easily supporting substrate 10 be peeled off.
In addition, supporting substrate 10 can be stacked and manufacture glass laminate 100 with new glass substrate.
It should be noted that, when electronic equipment 26 is separated from the duplexer 24 of having electronic equipment component, being undertaken by utilizing ion generator blowing, controlled humidity, the fragment Electrostatic Absorption of silicone resin layer 16 can be suppressed further in electronic equipment 26.
The manufacture method of above-mentioned electronic equipment 26 is suitable for the compact display apparatus that the mobile terminal that manufactures mobile phone, PDA and so on uses.Display unit is LCD or OLED mainly, as LCD, comprises TN type, STN type, FE type, TFT type, mim type, IPS type, VA type etc.Substantially the situation of any display unit of passive driving types, active-drive can be applicable to.
As the electronic equipment 26 manufactured with said method, the display unit panel with glass substrate and display device component, the solar cell with glass substrate and component used for solar batteries can be enumerated, there is the thin-film secondary battery of glass substrate and thin-film secondary battery component, there is the electronic unit etc. of glass substrate and electronic device member.As display unit panel, comprise liquid crystal panel, organic EL panel, plasma display, field emission panel etc.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacturing process of the manufacture method of the supporting substrate representing tape tree lipid layer.
(A) and (B) of Fig. 2 is the schematic cross sectional view of the embodiment representing the manufacture method of the supporting substrate of tape tree lipid layer by process sequence.
Fig. 3 is the schematic cross sectional view of the formation representing heat treatment apparatus.
Fig. 4 is the schematic cross sectional view of glass laminate.
(A) and (B) of Fig. 5 is the schematic cross sectional view of the embodiment representing the manufacture method of electronic equipment by process sequence.
Fig. 6 represents that drop is attached to the schematic cross sectional view of the supporting substrate of the band curability layer of the state of curable silicone composition layer.
Fig. 7 is the schematic cross sectional view of the supporting substrate representing the tape tree lipid layer being formed with protuberance on the surface of silicone resin layer.
Fig. 8 is the schematic cross sectional view representing the glass laminate using the supporting substrate with the tape tree lipid layer of protuberance to be formed.
Fig. 9 is the chart representing the height H of protuberance and the relation of width W.
description of reference numerals
10 supporting substrates
12 curable silicone composition layers
The supporting substrate of 14 band curability layers
16 silicone resin layers
The surface of 16a silicone resin layer
The supporting substrate of 18 tape tree lipid layer
20 glass substrates
1st interarea of 20a glass substrate
2nd interarea of 20b glass substrate
22 electronic device members
The duplexer of 24 having electronic equipment components
26 electronic equipments
30 heat treatment apparatus
32 heated chambers
34 supporting pins
36 brace tables
38 heating plates
40 blast pipes
42 carrying-in/carrying-out mouth
51 drops
The protuberance of 61 silicone resin layers
100 glass laminate
The height of H protuberance
The width of W protuberance
Detailed description of the invention
Referring to accompanying drawing, the preferred embodiment of the present invention is described, but the present invention is not limited to following embodiment, can without departing from the scope of the present invention to various distortion and the replacement in addition of following embodiment.
Embodiment
Below, by embodiment etc., the present invention is specifically described, but the present invention does not limit by these examples.
In following embodiment and comparative example, as glass substrate, use the glass plate (long 1320mm, wide 1120mm, thickness of slab 0.2mm, the linear expansion coefficient 38 × 10 that are formed by alkali-free pyrex -7/ DEG C, Asahi Glass Co., Ltd manufacture, trade name " AN100 ").In addition, as supporting substrate, the glass plate (long 1360mm, wide 1170mm, thickness of slab 0.5mm, the linear expansion coefficient 38 × 10 that are formed by alkali-free pyrex is used equally -7/ DEG C, Asahi Glass Co., Ltd manufacture, trade name " AN100 ").
< embodiment 1 >
First, by the surface of supporting substrate with after alkaline aqueous solution cleaning, with pure water cleaning, make it purifying.
Thereafter, utilizing mould to be coated with machine (coating speed: 40mm/s, discharge rate: 8ml) is coated on the 1st interarea of supporting substrate by solution X described later, supporting substrate arranges the layer (curable silicone composition layer) comprising uncured bridging property organopolysiloxane, obtains supporting substrate (the coated weight 20g/m being with curability layer 2).
(solution X)
Will as (the AZumaxCompanyLimited. manufacture of the straight-chain vinyl methyl polysiloxanes of composition (A), trade name " VDT-127 ", viscosity at 25 DEG C is 700-800cP (centipoise), the mol%:0.325 of the vinyl in 1mol organopolysiloxane) (AZumaxCompanyLimited. manufactures with the straight-chain methylhydrogenpolysi,oxane as composition (B), trade name " HMS-301 ", viscosity at 25 DEG C is 25-35cP (centipoise), the 1 intramolecular quantity with the hydrogen atom of silicon atom bonding: 8) mix, the mol ratio of whole vinyl and the whole hydrogen atoms with silicon atom bonding (hydrogen atom/vinyl) is made to be 0.9, relative to this mixture of siloxanes 100 mass parts, the silicon compound (boiling point: 120 DEG C) that what the following formula as composition (C) (1) mixing 1 mass parts represented have acetylene system unsaturated group.
HC ≡ C-C (CH 3) 2-O-Si (CH 3) 3formula (1)
Then, relative to the total amount of composition (A), composition (B) and composition (C), the mode that platinum concentration during to be scaled platinum is 100ppm adds platinum group catalyst, and (organosilicon Co., Ltd. of SHIN-ETSU HANTOTAI manufactures, trade name " CAT-PL-56 "), obtain the mixed liquor of organopolysiloxane composition.And then, relative to mixed liquor 100 mass parts obtained, add the IPsolvent2028 (initial boiling point: 200 DEG C, emerging the producing of bright dipping is made) of 150 mass parts, obtain mixed solution.
Then, carrying-in/carrying-out mouth in heat treatment apparatus as shown in Figure 3, the supporting substrate of band curability layer is moved in heated chamber, loads the supporting substrate of above-mentioned band curability layer on the top being arranged at the multiple supporting pins bottom heated chamber, close carrying-in/carrying-out mouth.First, heating plate is utilized to carry out the heating of the supporting substrate of the band curability layer of 150 seconds with 160 DEG C.It should be noted that, the distance of curable silicone composition layer and heating plate is 70mm.
During heating, be exhausted with the condition of 2000L/min, meanwhile, add hot-air (temperature 120 DEG C) with 2000L/min supply.
Heat after terminating, open the carrying-in/carrying-out mouth of heat treatment apparatus, the supporting substrate of the band curability layer implementing heating is taken out of in heat treatment apparatus.It should be noted that, carry out after this takes out of, the supporting substrate of the next one with curability layer being moved in heat treatment apparatus via same carrying-in/carrying-out mouth, implementing same heating.
Thereafter, the supporting substrate of the band curability layer after above-mentioned heating is put into other heat treatment apparatus, implement the heating (drying process afterwards) of 1450 seconds again with 220 DEG C, form the silicone resin layer of thickness 8 μm at the 1st interarea of supporting substrate.
Then, the organic siliconresin aspect on glass substrate and supporting substrate at room temperature suppressed by atmospheric pressure and fits, cutting off end, obtain the glass laminate S1 of long 1300mm, wide 1100mm thus.
In embodiment 1, according to same step, make 100 glass laminate S1 continuously.
It should be noted that, in the glass laminate S1 obtained, the silicone resin layer of any one is all large than the peel strength at the layer of glass substrate and the interface of silicone resin layer with the peel strength at the interface of the layer of supporting substrate.
< comparative example 1 >
Capacity when heating is changed to 1400L/min by 2000L/min, the quantity delivered adding hot-air is changed to 1400L/min by 2000L/min, in addition, according to step similarly to Example 1, manufactures 100 glass laminate C1.
The mensuration > of < protuberance
To last glass laminate S1 obtained in embodiment 1 and comparative example 1 and C1, special checkout facility is used to confirm protuberance.Specifically, conveyance glass laminate limit, limit, from one side side irradiation LED light source taking pictures from another side side camera, differentiates the luminance difference in the image obtained, the point for bright point is judged to be protuberance.The number of the protuberance judged thus in embodiment 1 as 15, in comparative example 1 as 57.
Then, from glass laminate, glass substrate is peeled off, the surface of silicone resin layer is exposed, then, use surface roughness/contour shape analyzer (Tokyo Precision Co., Ltd manufacture, trade name " SURFCOM-1400D ") to measure the height H (unit: μm) of each protuberance on the surface of silicone resin layer and width W (unit: μm), draw in the graph.
Fig. 9 is the chart representing the height H of protuberance and the relation of width W.In the chart of Fig. 9, "●" represents the point of embodiment 1, and " ◆ " represents the point of comparative example 1.As the diagram of Fig. 9, the ratio H/W of the protuberance of embodiment 1 is all less than 3 × 10 -5, on the other hand, the ratio H/W of the protuberance of comparative example is 3 × 10 -5above.
It should be noted that, the stripping of glass substrate is carried out as follows.First, the 2nd interarea of glass substrate is fixed on fixed station, with the 2nd interarea (with the face of silicone resin layer side opposite side) of sucker suction supporting substrate.Then, the silicone resin layer in 1 bight in 4 bights that glass laminate has and the cutter of the interface inserting thickness 0.4mm of glass substrate, make glass substrate peel off a little, forms the starting point peeled off.Then, sucker is moved to the direction away from fixed station, the supporting substrate of tape tree lipid layer and glass substrate are peeled off.
< display is uneven evaluates >
Use the glass laminate of the glass laminate S1 determining the embodiment 1 of protuberance and the other preparation that there is not protuberance, be clamped with the LCD of liquid crystal according to method manufacture described later.
Then, 2nd interarea (with the face of silicone resin layer side opposite side) of the supporting substrate in both sides configures light polarizing film (Nitto Denko Corp manufactures, trade name " F1205DU "), the area source as backlight is irradiated from one side side, as a result, the generation of display uneven (stain is uneven) is not observed in the position of protuberance.
On the other hand, the glass laminate C1 of the comparative example 1 determining protuberance is evaluated similarly, result, observed the generation of display uneven (stain is uneven) in the position of protuberance.
From above result, the ratio H/W of the protuberance that the surface of silicone resin layer is formed is less than 3 × 10 -5time, even if form protuberance, also can suppress to show uneven generation.
The manufacture > of < LCD
In this example, the glass laminate S1 obtained in embodiment 1 is used to manufacture LCD.
First, prepare 2 pieces of glass laminate S1, on the 2nd interarea of the glass substrate of one piece of glass laminate S1 (hereinafter also referred to " glass laminate S1-1 "), make silicon nitride, silica, non-crystalline silicon film forming successively by plasma CVD method.Then, by ion doping apparatus, the boron of low concentration is injected amorphous silicon layer, carry out 450 DEG C under nitrogen atmosphere and heat for 60 minutes, carry out Dehydroepiandrosterone derivative.
Then, laser anneal device is utilized to carry out the crystallization process of amorphous silicon layer.Then, by employing photolithographic etching and ion doping apparatus, the phosphorus of low concentration being injected amorphous silicon layer, forming the TFT zone of N-type and P type.Then, in the 2nd interarea side of glass substrate, utilizing plasma CVD method form silicon oxide film and after forming gate insulating film, make molybdenum film forming by sputtering method, forming gate electrode by employing photolithographic etching.Then, utilize photoetching process and ion doping apparatus, the boron of high concentration and phosphorus are injected N-type, P type separately desired by region, form source region (sourcearea) and drain region (drainarea).Then, in the 2nd interarea side of glass substrate, by utilizing the film forming of the silica of plasma CVD method to form interlayer dielectric, by using the film forming of the aluminium of sputtering method and using photolithographic etching to form TFT electrode.Then, carrying out the heating of 450 DEG C, 60 minutes under a hydrogen atmosphere, carry out hydrogenation treatment, afterwards, by utilizing the film forming of the silicon nitride of plasma CVD method, forming passivation layer.Afterwards, at the 2nd interarea side coated UV line curable resin of glass substrate, lithographically form planarization layer and contact hole.Then, utilizing sputtering method to form indium oxide tin film, forming pixel electrode by employing photolithographic etching.
Then, to another block glass laminate S1 (hereinafter also referred to " glass laminate S1-2 "), under air atmosphere, the heating of 450 DEG C, 60 minutes is carried out.Then, on the 2nd interarea of the glass substrate of glass laminate S1-2, making chromium film forming by sputtering method, forming light shield layer by employing photolithographic etching.Then, in the 2nd interarea side of glass substrate, be coated with method coating chromatic resist by mould, lithographically and heat cure form colour filter.Then, indium oxide tin film is formed by sputtering method, shape paired electrode.Then, in the 2nd interarea side of glass substrate, be coated with method coated UV line cured resin liquid by mould, and lithographically form column spacer with heat cure.Then, by rolling method coating polyimide resin liquid, and form oriented layer by heat cure, rub.
Then, by distributor method (dispensermethod), sealing resin liquid is drawn into frame-shaped, by distributor method, liquid crystal drop is added in frame, afterwards, use the above-mentioned glass laminate S1-1 being formed with pixel electrode, is fitted each other in 2nd interarea side of the glass substrate of 2 pieces of glass laminate S1, obtain LCD by ultraviolet curing and heat cure.
Then, make the 2nd interarea vacuum suction of the supporting substrate of glass laminate S1-1 in platform, to the stainless steel cutter of the interface inserting thickness 0.1mm of the glass substrate in the bight of glass laminate S1-2 and silicone resin layer, form the stripping starting point on the 1st interarea of glass substrate and the fissility surface of silicone resin layer.Here, blowed except electronic fluids while carry out the insertion of cutter to this interface by ion generator (KEYENCECORPORATION manufacture).Then, continued to blow except electronic fluids to the space formed, while make vacuum cup rise by ion generator.Then, utilize vacuum cup to adsorb the 2nd interarea of the supporting substrate of glass laminate S1-2, and then make sucker increase.Its result, platform only remains the dummy cell with the LCD of the supporting substrate of glass laminate S1-1, the supporting substrate of the band silicone resin layer of glass laminate S1-2 can be peeled off.
Then, make to be formed with the 1st interarea vacuum suction of the glass substrate of colour filter in platform at the 2nd interarea, to the stainless steel cutter of the interface inserting thickness 0.1mm of the glass substrate in the bight of glass laminate S1-1 and silicone resin layer, form the stripping starting point on the 1st interarea of glass substrate and the fissility surface of silicone resin layer.Then, with the 2nd interarea of the supporting substrate of vacuum cup absorption glass laminate S1-1, and then sucker is made to increase.Its result, platform only remains LCD cell, and the supporting substrate that can be fixed with silicone resin layer is peeled off.Thereby, it is possible to obtain the multiple LCD cell be made up of the glass substrate of thickness 0.1mm.
Then, by cutting off operation, multiple LCD cell is divided into.The operation attaching polarizer is implemented to each LCD cell made, and then implements module generation operation and obtain LCD.The LCD obtained thus characteristically can not have problems.
Above with reference to specific embodiment to invention has been detailed description, but it will be apparent for a person skilled in the art that can increase various change, correction under the prerequisite not departing from the spirit and scope of the invention.
The application is the application that the Japanese Patent of applying for based on May 29th, 2014 to be willing to 2014-111476, and its content is quoted in the application as reference.

Claims (8)

1. a supporting substrate for tape tree lipid layer, its silicone resin layer of one side that there is supporting substrate and be arranged at supporting substrate, the supporting substrate of this tape tree lipid layer is used to laminated glass substrate on described silicone resin layer and manufactures glass laminate, wherein,
Be formed with protuberance on the surface of the side of the stacked described glass substrate of described silicone resin layer, the height H of described protuberance and the ratio H/W of width W are less than 3 × 10 -5.
2. the supporting substrate of tape tree lipid layer according to claim 1, wherein, the height H of described protuberance is less than 0.10 μm.
3. a glass laminate, it possesses:
The supporting substrate of the tape tree lipid layer described in claim 1 or 2 and
Be laminated in the glass substrate on described silicone resin layer.
4. glass laminate according to claim 3, wherein, described organic siliconresin is the reaction solidfied material of olefinic organic based polysiloxane and organic hydrogen polysiloxanes.
5. the glass laminate according to claim 3 or 4, wherein, by with the quality percentage of oxide benchmark, described glass substrate represents that the alkali-free glass containing following compositions is formed,
SiO 2：50～66％
Al 2O 3：10.5～24％
B 2O 3：0～12％
MgO：0～8％
CaO：0～14.5％
SrO：0～24％
BaO：0～13.5％
MgO+CaO+SrO+BaO：9～29.5％
ZrO 2：0～5％。
6. the glass laminate according to claim 3 or 4, wherein, by with the quality percentage of oxide benchmark, described glass substrate represents that the alkali-free glass containing following compositions is formed,
SiO 2：58～66％
Al 2O 3：15～22％
B 2O 3：5～12％
MgO：0～8％
CaO：0～9％
SrO：3～12.5％
BaO：0～2％
MgO+CaO+SrO+BaO：9～18％
ZrO 2：0～5％。
7. a manufacture method for electronic equipment, it possesses:
Component formation process, the surface of the glass laminate according to any one of claim 3 ~ 6 forms electronic device member, obtains the duplexer of having electronic equipment component, and
Separation circuit, peels off the supporting substrate of described tape tree lipid layer from the duplexer of described having electronic equipment component, obtains the electronic equipment with described glass substrate and described electronic device member.
8. the manufacture method of the supporting substrate of a tape tree lipid layer, the supporting substrate of described tape tree lipid layer has supporting substrate and is arranged at the silicone resin layer of one side of supporting substrate, it is used to laminated glass substrate on described silicone resin layer and manufactures glass laminate, and this manufacture method possesses following operation:
Curable silicone composition is coated on the operation on described supporting substrate,
In the chamber of regulation, preliminary drying process and rear baking process are carried out to the described supporting substrate being coated with described curable silicone composition, thus obtains the operation of silicone resin layer;
Described preliminary drying process has following operation: the operation heated described curable silicone composition, and carries out supply gas and the operation from described chamber indoor exhaust in described chamber,
By regulating quantity delivered and the capacity of described gas, suppressing the drop of solvent to the attachment of described silicone resin layer, making the ratio H/W of following H and W be less than 3 × 10 -5,
H: at the height of the protuberance that the surface of the side of the stacked described glass substrate of described silicone resin layer is formed,
W: at the width of the protuberance that the surface of the side of the stacked described glass substrate of described silicone resin layer is formed.
CN201510290840.0A 2014-05-29 2015-05-29 The supporting substrate and its manufacturing method of tape tree lipid layer, the manufacturing method of glass laminate and electronic equipment Expired - Fee Related CN105128460B (en)

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